Relevant bibliographies by topics / High workfunction oxides

Contents

  1. Journal articles
  2. Dissertations / Theses

Academic literature on the topic 'High workfunction oxides'

Author: Grafiati
Published: 21 November 2023

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'High workfunction oxides.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "High workfunction oxides"

1

Mishra, Sikha, Urmila Bhanja, and Guru Prasad Mishra. "An Analytical Modeling and Performance Analysis of Graded Work Function Gate Recessed Channel SOI-MOSFET." Nanoscience & Nanotechnology-Asia 9, no. 4 (2019): 504–11. http://dx.doi.org/10.2174/2210681208666180820151121.

Full text
Abstract:
Introduction: A new analytical model is designed for Workfunction Modulated Rectangular Recessed Channel-Silicon On Insulator (WMRRC-SOI) MOSFET that considers the concept of groove gate and implements an idea of workfunction engineering. Methods: The impact of Negative Junction Depth (NJD) and oxide thickness (tox) are analyzed on device performances such as Sub-threshold Slope (SS), Drain Induced Barrier Lowering (DIBL) and threshold voltage. Results: The results of the proposed work are evaluated with the Rectangular Recessed Channel-Silicon On Insulator (RRC-SOI) MOSFET keeping the metal w
APA, Harvard, Vancouver, ISO, and other styles
2

Pan, J., S. Afroz, N. Crain, W. Henning, J. Oliver, and T. Knight. "Analysis of Deep Level and Oxide Interface Defects Using 100V HF Schottky Diodes and MOS CV for Silicon and 4H SiC HV MOSFETs, Advanced Power Electronics, and RF ASIC." MRS Advances 4, no. 44-45 (2019): 2377–82. http://dx.doi.org/10.1557/adv.2019.224.

Full text
Abstract:
AbstractIn this paper we report high voltage MOS and Schottky Diode CV techniques for silicon and SiC power devices. 4H Silicon carbide is a wide bandgap semiconductor suitable for high voltage power electronics and RF applications due to high avalanche breakdown critical electric field, and thermal conductivity. The performance of various power devices, which may include MOSFET and Static Induction Transistor (SIT), can be affected by the deep level traps in the substrate and the oxide interfacial defects. We have characterized deep level trap (High Voltage Schottky Diode HF CV) and oxide int
APA, Harvard, Vancouver, ISO, and other styles
3

Goyal, Priyanshi, та Harsupreet Kaur. "Implementing variable doping and work function engineering in β-Ga2O3 MOSFET to realize high breakdown voltage and PfoM". Semiconductor Science and Technology 37, № 4 (2022): 045018. http://dx.doi.org/10.1088/1361-6641/ac5843.

Full text
Abstract:
Abstract In this paper, the impact of workfunction engineering and lightly doped region near drain has been studied on lateral β-Ga2O3 metal oxide semiconductor field effect transistor (MOSFET) by employing exhaustive technology computer aided design simulations. The theoretically predicted value of breakdown voltage and power figure of merit (PFoM) for Ga2O3 based devices has not been achieved yet, and hence in order to improve these parameters, variable channel doping and work function engineering have been implemented on lateral β-Ga2O3 MOSFET for the first time in the present work. A thoro
APA, Harvard, Vancouver, ISO, and other styles
4

Jung, Hakkee. "Impact of Gate Metal Work-function for On-to-off Current Ratio and Threshold Voltage in Junctionless Gate-All-Around (GAA) MOSFET Stacked with SiO2 and High-k Dielectric." International Journal of Emerging Technology and Advanced Engineering 13, no. 1 (2023): 124–32. http://dx.doi.org/10.46338/ijetae0123_13.

Full text
Abstract:
The relationship among the on-to-off current ratio, threshold voltage, and the gate metal work-function is investigated for a junctionless (JL) Gate-All-Around (GAA) MOSFET with a gate oxide film in which SiO2 and a high-k dielectric material are stacked. The JL structure works in the accumulation state, and the threshold voltage is defined as the gate voltage when the minimum potential in the channel becomes Fermi potential. The on-to-off current ratio Ion/Ioff is obtained by obtaining on-current Ion at the threshold voltage and off-current Ioff at the gate voltage of 0 V. As a result, if the
APA, Harvard, Vancouver, ISO, and other styles
5

Samavedam, S. B., J. K. Schaeffer, D. C. Gilmer, et al. "Evaluation of Candidate Metals for Dual-Metal Gate CMOS with HfO2 Gate Dielectric." MRS Proceedings 716 (2002). http://dx.doi.org/10.1557/proc-716-b2.5.

Full text
Abstract:
AbstractAs the MOSFET gate lengths are scaled down to 50 nm or below, the expected increase in gate leakage will be countered by the use of a high dielectric constant (high K) material. The series capacitance from polysilicon gate electrode depletion significantly reduces the gate capacitance as the dielectric thickness is scaled down to 10 Å equivalent oxide thickness (EOT) or below. Metal gates promise to solve this problem and address other problems like boron penetration and enhanced gate resistance that will have increased focus as the polysilicon gate thickness is reduced. Extensive simu
APA, Harvard, Vancouver, ISO, and other styles

Dissertations / Theses on the topic "High workfunction oxides"

1

Lhuillier, Jérémy. "Accordabilité des composants photoniques à base de structures hybrides graphène/diélectrique adressables par la surface." Electronic Thesis or Diss., Lyon, 2022. https://bibli.ec-lyon.fr/exl-doc/TH_2022LYSEC008.pdf.

Full text
Abstract:
L’émergence d’une grande variété de structures photoniques, au cours des dernières décennies, a permis le développement de composants intégrés sur puce réalisant des fonctions optiques en espace libre de plus en plus complexes. Parmi elles, les structures diélectriques membranaires ont permis d’implémenter une large panoplie de composants optiques planaires, allant du filtrage spectral résonant à la mise en forme de faisceau avec de faibles pertes. Toutefois, si ces structures permettent d’obtenir un contrôle quasi-total du champ électromagnétique rayonné, ce contrôle est généralement statique
APA, Harvard, Vancouver, ISO, and other styles
2

Kumar, Pushpendra. "Impact of 14/28nm FDSOI high-k metal gate stack processes on reliability and electrostatic control through combined electrical and physicochemical characterization techniques." Thesis, Université Grenoble Alpes (ComUE), 2018. http://www.theses.fr/2018GREAT114/document.

Full text
Abstract:
Cette thèse concerne l’étude des procédés de fabrication des grilles HKMG des technologies FDSOI 14 et 28 nm sur les performances électriques des transistors MOS. Elle a porté spécifiquement sur l'aspect fiabilité et la maîtrise du travail de sortie effectif (WFeff), au travers de la diffusion des additifs comme le lanthane (La) et l’aluminium (Al). Ce travail combine des techniques de caractérisation électriques et physico-chimiques et leur développement. L'effet de l'incorporation de ces additifs sur la fiabilité et la durée de vie du dispositif a été étudié. Le lanthane dégrade les performa
APA, Harvard, Vancouver, ISO, and other styles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography