Relevant bibliographies by topics / Homojunction

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Homojunction'

Author: Grafiati
Published: 4 June 2021
Last updated: 28 May 2022

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Journal articles on the topic "Homojunction"

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Jayathilaka, Charith, Loku Singgappulige Rosantha Kumara, Koji Ohara, Chulho Song, Shinji Kohara, Osami Sakata, Withana Siripala, and Sumedha Jayanetti. "Enhancement of Solar Cell Performance of Electrodeposited Ti/n-Cu2O/p-Cu2O/Au Homojunction Solar Cells by Interface and Surface Modification." Crystals 10, no. 7 (July 13, 2020): 609. http://dx.doi.org/10.3390/cryst10070609.

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Cuprous oxide (Cu2O) homojunction thin films on Ti substrates were fabricated by an electrochemical deposition in which a p-Cu2O layer was deposited on an n-Cu2O layer by carefully controlled bath conditions. It was found that the open-circuit voltage of the homojunction solar cell was significantly influenced by the pH of the lactate bath. The variation of the pH was used to achieve the best possible crystal orientation for homojunctions. The crystallinity and morphology of the products were characterized by X-ray diffraction (XRD), high-energy x-ray diffraction (HEXRD), and scanning electron microscopy (SEM). The current density voltage (J-V) analysis showed that the sulfur treatment and annealing enhanced the photocurrent by ten-fold compared to the untreated and unannealed homojunction solar cell. X-ray photoelectron spectroscopy (XPS) studies confirmed that the sulfur treatment eliminated the surface CuO and formed a thin layer of CuS, which was very useful to make the front Ohmic contact. Transient measurements confirmed that the p-type Cu2O layer, which was subjected to sulfur treatment, significantly reduced the recombination, thus enhancing the efficiency of the solar cell. The best sulfur treated annealed Ti/n-Cu2O/p-Cu2O/Au solar cell produced an energy conversion efficiency of 2.64% with an open-circuit voltage of 490 mV and a short circuit current density of 12.8 mA cm−2 under AM 1.5 illumination.
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Ye, Qiannan, Xu Zhang, Dong Guo, Wei Xu, Honglong Ning, Tian Qiu, Jinxiong Li, Danqing Hou, Rihui Yao, and Junbiao Peng. "Preparation of Highly Transparent (at 450–800 nm) SnO2 Homojunction by Solution Method and Its Photoresponse." Coatings 10, no. 4 (April 17, 2020): 399. http://dx.doi.org/10.3390/coatings10040399.

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High-quality SnO2:Si films and SnO2:10 at.% Ga films were prepared by the solution method. The roughness of films is below 1.08 nm, and possess exceptional transparency (>75%) and decent semiconductor properties. Based on this, the SnO2:Si/SnO2: Ga homojunctions with different Si doping concentrations were prepared. It is found that the conductivity of the SnO2:Si thin film gradually increases, and the rectification characteristics of the homojunction are optimized with increasing Si doping content. The SnO2:15 at.% Si/SnO2:10 at.% Ga homogeneous junction has the best performance, the turn-on voltage is as low as 5.6 V, and it also exhibits good unidirectional conductivity. The photoresponse of the SnO2:15 at.% Si/SnO2:10 at.% Ga homojunction under the lights of red, yellow, and purple was explored respectively. The result shows that the device responds strongly to purple light. Compared with the test results in the dark environment, the device current increases by two orders, which is expected to be applied in the field of near-ultraviolet detection.
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Qiao, Mengzhu, Hongjin Liu, Jun Lv, Guangqing Xu, Xinyi Zhang, Xia Shu, and Yucheng Wu. "Enhanced Visible-Light Photocatalytic Remediation of Tetracycline Hydrochloride by Nanostructured BiOI Homojunctions." Nano 14, no. 09 (September 2019): 1950112. http://dx.doi.org/10.1142/s1793292019501121.

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The BiOI homojunctions were constructed between BiOI nanosheets and BiOI nanoflowers, which were prepared with a facile ultrasound-assisted solvothermal method. BiOI nanosheets were uniformly distributed on BiOI nanoflowers surface. The homojunction structure constructed between nanosheets and nanoflowers efficiently speeds up the transfer and separation of photoinduced charge carriers, which is beneficial to promote the photocatalytic activity. Compared with single BiOI, BiOI homojunctions exhibit remarkably improved photocatalytic degradation activity for tetracycline hydrochloride (TC); photodegradation rate of 69.43% for TC has been reached after being irradiated under visible light for 1[Formula: see text]h. Deeper analyses of photocatalytic degradation mechanism of TC have been conducted; the results identify that [Formula: see text] and h[Formula: see text] play important roles during the TC degradation reaction.
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Mao, Yuliang, Yuting Du, Zhipeng Huang, Guanhua Zhang, and Jianmei Yuan. "Computational Design of α-AsP/γ-AsP Vertical Two-Dimensional Homojunction for Photovoltaic Applications." Nanomaterials 12, no. 10 (May 13, 2022): 1662. http://dx.doi.org/10.3390/nano12101662.

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Based on first-principles calculations, we design a α-AsP/γ-AsP homojunction with minimum lattice distortion. It is found that the α-AsP/γ-AsP homojunction has an indirect bandgap with an intrinsic type-II band alignment. The proposed α-AsP/γ-AsP homojunction exhibits high optical absorption of 1.6×106 cm−1 along the zigzag direction. A high power conversion efficiency (PCE) of 21.08% is achieved in the designed α-AsP/γ-AsP homojunction, which implies it has potential applications in solar cells. Under 4% in-plane axial strain along the zigzag direction, a transition from indirect band gap to direct band gap is found in the α-AsP/γ-AsP homojunction. Moreover, the intrinsic type-II band alignment can be tuned to type-I band alignment under in-plane strain, which is crucial for its potential application in optical devices.
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Zhao, Haitao, Luyan Guo, Chuanwang Xing, Heyuan Liu, and Xiyou Li. "A homojunction–heterojunction–homojunction scaffold boosts photocatalytic H2 evolution over Cd0.5Zn0.5S/CoO hybrids." Journal of Materials Chemistry A 8, no. 4 (2020): 1955–65. http://dx.doi.org/10.1039/c9ta11915a.

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A hybrid photocatalyst was constructed based on twin crystal Cd0.5Zn0.5S with a homojunction containing M-CoO as the co-catalyst. The homojunction containing M-CoO is proved to be a more efficient co-catalyst than its pure phase counterparts.
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Liu, Zhiguo, Gang Wang, Hsueh-Shih Chen, and Ping Yang. "An amorphous/crystalline g-C3N4 homojunction for visible light photocatalysis reactions with superior activity." Chemical Communications 54, no. 37 (2018): 4720–23. http://dx.doi.org/10.1039/c8cc01824c.

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An amorphous/crystalline g-C3N4 homojunction was prepared for the first time at high temperature, in which the ratio of crystalline g-C3N4 in the homojunction was optimized.
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Chew, Yi-Hao, Boon-Junn Ng, Xin Ying Kong, Lutfi Kurnianditia Putri, Jie-Yinn Tang, Lling-Lling Tan, and Siang-Piao Chai. "Interfacial engineering of a zinc blende/wurtzite homojunction photocatalyst through hybridization with a cobalt phosphide co-catalyst for enhanced visible-light-driven photocatalytic H2 evolution." Sustainable Energy & Fuels 4, no. 4 (2020): 1822–27. http://dx.doi.org/10.1039/c9se00800d.

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The synergy of integrating homojunction and heterojunction structures in one composite was demonstrated by combining CoP and ZB/WZ homojunction-containing Zn0.5Cd0.5S which showed a 20-times enhancement in photocatalytic H2 evolution activity.
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Choa, F. S., and P. L. Liu. "Cascaded homojunction avalanche photodiodes." Fiber and Integrated Optics 7, no. 1 (January 1988): 1–15. http://dx.doi.org/10.1080/01468038808219347.

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Tanaka, Tooru, Masaki Miyabara, Katsuhiko Saito, Qi Xin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz. "Development of ZnTe-Based Solar Cells." Materials Science Forum 750 (March 2013): 80–83. http://dx.doi.org/10.4028/www.scientific.net/msf.750.80.

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ZnTe solar cells with homojunction and heterojunction structures have been developed. Homojunction was fabricated by thermal diffusion of Al into p-ZnTe, and the effect of the diffusion temperature on the photovoltaic (PV) properties was investigated. The highest efficiency was obtained by lowering the diffusion temperature and using p-ZnTe substrate with a low hole concentration. For the heterojunction solar cell, n-ZnO/i-ZnTe/p-ZnTe structure was fabricated, and PV properties were characterized.
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Tada, Hiroaki, and Shin-Ichi Naya. "Atomic Level Interface Control of SnO2-TiO2 Nanohybrids for the Photocatalytic Activity Enhancement." Catalysts 11, no. 2 (February 3, 2021): 205. http://dx.doi.org/10.3390/catal11020205.

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This review article highlights atom-level control of the heterojunction and homojunction in SnO2-TiO2 nanohybrids, and the effects on the photocatalytic property. Firstly, a comprehensive description about the origin for the SnO2-TiO2 coupling effect on the photocatalytic activity in the conventional SnO2-TiO2 system without heteroepitaxial junction is provided. Recently, a bundle of thin SnO2 nanorods was hetero-epitaxially grown from rutile TiO2 seed nanocrystals (SnO2-NR#TiO2, # denotes heteroepitaxial junction). Secondly, the heterojunction effects of the SnO2-NR#TiO2 system on the photocatalytic activity are dealt with. A novel nanoscale band engineering through the atom-level control of the heterojunction between SnO2 and TiO2 is presented for the photocatalytic activity enhancement. Thirdly, the homojunction effects of the SnO2 nanorods on the photocatalytic activity of the SnO2-NR#TiO2 system and some other homojunction systems are discussed. Finally, we summarize the conclusions with the possible future subjects and prospects.
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Dissertations / Theses on the topic "Homojunction"

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Li, Feng 1967. "Characteristics of CuInSe₂ homojunction photodetectors." Thesis, McGill University, 2001. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=31057.

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Studies have been made on homojunction photodetectors fabricated on Bridgman-grown monocrystalline p-type CuInSe2 substrates by diffusion of indium. The essential steps required to optimize the fabrication conditions were established.
Firstly, parameters such as quantum efficiency, junction depth, surface recombination velocity, and minority carrier diffusion length are analyzed. Secondly, the dark current-voltage characteristics of devices were measured. Some detector dark current is only 80nA at 0.5V reverse bias. It was confirmed that the diffusion current and recombination current are comparable in the dark current transport mechanism of the CuInSe2 homojunctions. Thirdly, the relationships between capacitance-voltage, capacitance-frequency characteristics were also investigated. It was observed that at a given voltage, the capacitance value decreased when the measuring frequency was increased. This result confirmed that deep defects exist in the material. Fourthly, the diffusion length of minority carriers was determined by the photocurrent and capacitance method. The diffusion length is smaller than 1 micron. The quantum efficiency and photoresponse were also measured. The maximum quantum efficiency of the detectors was measured as high as 60%. The photodetector response time range from 14 mus to 21 mus.
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Lee, Soon Peng. "Modelling the DC performance of GAAS Homojunction bipolar transistors." Thesis, University of British Columbia, 1985. http://hdl.handle.net/2429/26306.

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Two models, one analytical and one numerical, have been developed to predict the dc performance of GaAs homojunction bipolar transistors. In each case the minority carrier properties of lifetime and mobility have been described by polynomial fits to recent data. Bandgap narrowing in the emitter and base regions has also been taken into account. The analytical model assumes uniform doping in the three regions of the transistor and is thus appropriate to predicting the performance of devices fabricated using epitaxial technologies. This model is also useful for carrying out sensitivity analyses. The importance of parameters such as regional widths and doping densities, minority carrier lifetimes and surface recombination velocity is examined here. The numerical model is useful for describing the performance of ion-implanted devices. Good agreement is obtained between results from the model and recent experimental data from prototype devices.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
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Fisher, Martin John. "Epitaxial growth and characterisation of heterojunction and homojunction LEDs with InAs active regions." Thesis, Lancaster University, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.268062.

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Young-Waithe, Karen (Karen A. ). 1960. "Process design, development and fabrication of InAs homojunction converter cells for microscale thermophotovoltaic application." Thesis, Massachusetts Institute of Technology, 2000. http://hdl.handle.net/1721.1/86597.

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Thesis (S.M.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, February 2001.
Includes bibliographical references (p. 179-182).
by Karen Young-Waithe.
S.M.
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Harada, Kentaro. "Organic p-i-n Homojunctions: Fundamentals and Applications." Doctoral thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2008. http://nbn-resolving.de/urn:nbn:de:bsz:14-ds-1216987132976-99427.

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In this thesis, we study the physical properties of doped organic semiconductors. We first demonstrate the impact of doping on C60 films. In contrast to previous reports for organic thin films, the n-doped C60 films show a decrease of mobility with increasing doping levels; i.e., they follow the well-known Matthiessen rule which is generally observed in inorganic semiconductors. Using further strong organic donors and acceptors, we realize p-i-n homojunctions of several organic matrices: zinc-phthalocyanine, pentacene, and an iridium-complex TER004. We observe stable and reproducible diode characteristics, which can be described by the standard Shockley theory with an exception concerning the temperature dependence of the diode parameters. The current-voltage characteristics of the pentacene homojunctions under illuminated conditions indicate that the thermodynamic limitation of the open-circuit voltage is determined by the built-in voltage of 1.65 V, and that the recombination process is influenced by the distinct charge transport properties of electrons and holes. The very high built-in voltage of 2.2 V in the TER004 homojunction allows a red phosphorescent homo-OLED, which shows visible emission around 650 nm with low operation voltage. We examine the charge balance status in the homojunction structure, revealing that TER004 has superior electron transport properties.
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Сидор, О. М. "Гомоперехід n-InSe–p-InSe : Cd з ефективністю 2,8 %." Thesis, Сумський державний університет, 2015. http://essuir.sumdu.edu.ua/handle/123456789/40978.

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Шаруватий кристал InSe (група А3В6) є привабливим матеріалом для перетворювачів сонячної енергії внаслідок високої фоточутливості та оптимальної ширини забороненої зони (1,2 еВ). Додатковою перевагою є його висока радіаційна стійкість.
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Qiu, C. X. (Xing Xing). "Characteristics of ZnOCuInSe2 heterojunctions and CuInSe2 homojunctions." Thesis, McGill University, 1985. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=65991.

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Baek, Kwang Ki. "Study of electrically active ceramic interfaces : ZnO based homojunctions and heterojunctions." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/11626.

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Piyankarage, Viraj Vishwakantha Jayaweera. "Uncooled Infrared Photon Detection Concepts and Devices." Digital Archive @ GSU, 2009. http://digitalarchive.gsu.edu/phy_astr_diss/30.

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This work describes infrared (IR) photon detector techniques based on novel semiconductor device concepts and detector designs. The aim of the investigation was to examine alternative IR detection concepts with a view to resolve some of the issues of existing IR detectors such as operating temperature and response range. Systems were fabricated to demonstrate the following IR detection concepts and determine detector parameters: (i) Near-infrared (NIR) detection based on dye-sensitization of nanostructured semiconductors, (ii) Displacement currents in semiconductor quantum dots (QDs) embedded dielectric media, (iii) Split-off band transitions in GaAs/AlGaAs heterojunction interfacial workfunction internal photoemission (HEIWIP) detectors. A far-infrared detector based on GaSb homojunction interfacial workfunction internal photoemission (HIWIP) structure is also discussed. Device concepts, detector structures, and experimental results discussed in the text are summarized below. Dye-sensitized (DS) detector structures consisting of n-TiO2/Dye/p-CuSCN heterostructures with several IR-sensitive dyes showed response peaks at 808, 812, 858, 866, 876, and 1056 nm at room temperature. The peak specific detectivity (D*) was 9.5E+10 Jones at 812 nm at room temperature. Radiation induced carrier generation alters the electronic polarizability of QDs provided the quenching of excitation is suppressed by separation of the QDs. A device constructed to illustrate this concept by embedding PbS QDs in paraffin wax showed a peak D* of 3E+8 Jones at ~540 nm at ambient temperature. A typical HEIWIP/HIWIP detector structures consist of single (or multiple) period(s) of doped emitter(s) and undoped barrier(s) which are sandwiched between two highly doped contact layers. A p-GaAs/AlGaAs HEIWIP structure showed enhanced absorption in NIR range due to heavy/light-hole band to split-off band transitions and leading to the development of GaAs based uncooled sensors for IR detection in the 2 5 μm wavelength range with a peak D* of 6.8E+5 Jones. A HIWIP detector based on p-GaSb/GaSb showed a free carrier response threshold wavelength at 97 µm (~3 THz)with a peak D* of 5.7E+11 Jones at 36 μm and 4.9 K. In this detector, a bolometric type response in the 97 - 200 µm (3-1.5 THz) range was also observed.
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Ariyawansa, Gamini. "Semiconductor Quantum Structures for Ultraviolet-to-Infrared Multi-Band Radiation Detection." Digital Archive @ GSU, 2007. http://digitalarchive.gsu.edu/phy_astr_diss/17.

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In this work, multi-band (multi-color) detector structures considering different semiconductor device concepts and architectures are presented. Results on detectors operating in ultraviolet-to-infrared regions (UV-to-IR) are discussed. Multi-band detectors are based on quantum dot (QD) structures; which include quantum-dots-in-a-well (DWELL), tunneling quantum dot infrared photodetectors (T-QDIPs), and bi-layer quantum dot infrared photodetectors (Bi-QDIPs); and homo-/heterojunction interfacial workfunction internal photoemission (HIWIP/HEIWIP) structures. QD-based detectors show multi-color characteristics in mid- and far-infrared (MIR/FIR) regions, where as HIWIP/HEIWIP detectors show responses in UV or near-infrared (NIR) regions, and MIR-to-FIR regions. In DWELL structures, InAs QDs are placed in an InGaAs/GaAs quantum well (QW) to introduce photon induced electronic transitions from energy states in the QD to that in QW, leading to multi-color response peaks. One of the DWELL detectors shows response peaks at ∼ 6.25, ∼ 10.5 and ∼ 23.3 µm. In T-QDIP structures, photoexcited carriers are selectively collected from InGaAs QDs through resonant tunneling, while the dark current is blocked using AlGaAs/InGaAsAlGaAs/ blocking barriers placed in the structure. A two-color T-QDIP with photoresponse peaks at 6 and 17 µm operating at room temperature and a 6 THz detector operating at 150 K are presented. Bi-QDIPs consist of two layers of InAs QDs with different QD sizes. The detector exhibits three distinct peaks at 5.6, 8.0, and 23.0 µm. A typical HIWIP/HEIWIP detector structure consists of a single (or series of) doped emitter(s) and undoped barrier(s), which are placed between two highly doped contact layers. The dual-band response arises from interband transitions of carriers in the undoped barrier and intraband transitions in the doped emitter. Two HIWIP detectors, p-GaAs/GaAs and p-Si/Si, showing interband responses with wavelength thresholds at 0.82 and 1.05 µm, and intraband responses with zero response thresholds at 70 and 32 µm, respectively, are presented. HEIWIP detectors based on n-GaN/AlGaN show an interband response in the UV region and intraband response in the 2-14 µm region. A GaN/AlGaN detector structure consisting of three electrical contacts for separate UV and IR active regions is proposed for simultaneous measurements of the two components of the photocurrent generated by UV and IR radiation.
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Books on the topic "Homojunction"

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Brinker, David J. On-orbit results of the LIPS III/InP homojunction solar cell experiment. [Washington, DC]: National Aeronautics and Space Administration, 1989.

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Brinker, David J. On-orbit results of the LIPS III/InP homojunction solar cell experiment. [Washington, DC]: National Aeronautics and Space Administration, 1989.

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Brinker, David J. On-orbit results of the LIPS III/InP homojunction solar cell experiment. [Washington, DC]: National Aeronautics and Space Administration, 1989.

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Imanieh, Mohsen. CuInSe2: Growth, electrical properties and fabrication of indium diffused homojunctions. Salford: University of Salford, 1986.

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H, Francombe Maurice, and Vossen John L, eds. Homojunction and quantum-well infrared detectors. San Diego: Academic Press, 1995.

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Maurice H. Francombe (Series Editor) and John L. Vossen (Series Editor), eds. Advances in Research and Development: Homojunction and Quantum-Well Infrared Detectors, Volume 21: Homojunction and Quantum-Well Infrared Detectors (Thin Films). Academic Press, 1995.

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Francombe, Maurice H., and John L. Vossen. Advances in Research and Development: Homojunction and Quantum-Well Infrared Detectors. Elsevier Science & Technology Books, 1995.

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J, Brinker David, and United States. National Aeronautics and Space Administration., eds. InP homojunction solar cell performance on the LIPS III flight experiment. [Washington, DC]: NASA, 1988.

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1918-, Weinberg Irving, and United States. National Aeronautics and Space Administration., eds. Radiation resistance and comparative performance of ITO/InP and n/p Inp homojunction solar cells. [Washington, DC]: National Aeronautics and Space Administration, 1989.

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Book chapters on the topic "Homojunction"

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Weik, Martin H. "homojunction." In Computer Science and Communications Dictionary, 733. Boston, MA: Springer US, 2000. http://dx.doi.org/10.1007/1-4020-0613-6_8446.

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Požela, Juras. "Homojunction Field-Effect and Bipolar Transistors." In Physics of High-Speed Transistors, 74–111. Boston, MA: Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1242-8_4.

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Leu, Sylvère, and Detlef Sontag. "Crystalline Silicon Solar Cells: Homojunction Cells." In Solar Cells and Modules, 97–138. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-46487-5_5.

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Nishizawa, J. i., and K. Suto. "Preparation of widegap II–VI homojunction devices by stoichiometry control." In Widegap II–VI Compounds for Opto-electronic Applications, 323–50. Boston, MA: Springer US, 1992. http://dx.doi.org/10.1007/978-1-4615-3486-0_13.

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Baumgartner, F. P., H.-P. Schweikardt, and E. Bucher. "Preparation of CdSiAs2 — Homojunction Solar Cells and its Anisotropic Optical Properties." In Tenth E.C. Photovoltaic Solar Energy Conference, 590–93. Dordrecht: Springer Netherlands, 1991. http://dx.doi.org/10.1007/978-94-011-3622-8_151.

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Xiao, Chong. "Toward “Phonon Glass Electron Crystal” in Solid-Solutioned Homojunction Nanoplates with Disordered Lattice." In Springer Theses, 65–78. Berlin, Heidelberg: Springer Berlin Heidelberg, 2016. http://dx.doi.org/10.1007/978-3-662-49617-6_4.

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Böer, Karl W. "pn-Homojunctions." In Survey of Semiconductor Physics, 617–60. Dordrecht: Springer Netherlands, 1992. http://dx.doi.org/10.1007/978-94-011-2912-1_18.

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Böer, Karl W. "pn-Homojunctions." In Handbook of the Physics of Thin-Film Solar Cells, 543–69. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-36748-9_30.

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Böer, Karl W. "pn-Homojunctions." In Springer Series in Solid-State Sciences, 171–200. Berlin, Heidelberg: Springer Berlin Heidelberg, 2009. http://dx.doi.org/10.1007/978-3-642-02236-4_7.

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"Homojunction LEDs." In Fundamentals of Solid-State Lighting, 133–52. CRC Press, 2014. http://dx.doi.org/10.1201/b17076-14.

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Conference papers on the topic "Homojunction"

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Biswas, Arnab, Nilay Dagtekin, Cem Alper, Luca De Michielis, Antonios Bazigos, Wladek Grabinski, and Adrian Ionescu. "Compact modeling of homojunction tunnel FETs." In 2014 21st International Conference "Mixed Design of Integrated Circuits & Systems" (MIXDES). IEEE, 2014. http://dx.doi.org/10.1109/mixdes.2014.6872152.

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Shen, W. Z., and A. G. Unil Perera. "Novel Si homojunction far-infrared detectors." In 4th International Conference on Thin Film Physics and Applications, edited by Junhao Chu, Pulin Liu, and Yong Chang. SPIE, 2000. http://dx.doi.org/10.1117/12.408411.

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Zhang, Peng, Xiang Xiao, Ling Wang, Yang Shao, and Shengdong Zhang. "Homojunction In2O3-TFTs prepared by anodization technique." In 2014 21st International Workshop on Active-Matrix Flatpanel Displays and Devices (AM-FPD). IEEE, 2014. http://dx.doi.org/10.1109/am-fpd.2014.6867210.

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Perera, A. G. Unil, W. Z. Shen, Hui C. Liu, Margaret Buchanan, Michael A. Tanner, and Kang L. Wang. "Si homojunction internal photoemission far-infrared detectors." In Photonics China '98, edited by Pingzhi Liang, Marc Wigdor, and William G. D. Frederick. SPIE, 1998. http://dx.doi.org/10.1117/12.318097.

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Nakagawa, Naoyuki, Soichiro Shibasaki, Hiroki Hiraga, Mutsuki Yamazaki, Kazushige Yamamoto, and Shinya Sakurada. "Feasibility study of homojunction CIGS solar cells." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6744869.

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Perera, A. G. Unil, W. Z. Shen, Hui C. Liu, Margaret Buchanan, and William J. Schaff. "High-performance GaAs homojunction far-infrared detectors." In Optoelectronics and High-Power Lasers & Applications, edited by Gail J. Brown. SPIE, 1998. http://dx.doi.org/10.1117/12.304491.

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Perera, A. G. Unil, W. Z. Shen, M. H. Francombe, Mark A. Shure, Hui C. Liu, Margaret Buchanan, and William J. Schaff. "GaAs homojunction far-infrared detectors for astronomy applications." In Astronomical Telescopes & Instrumentation, edited by Albert M. Fowler. SPIE, 1998. http://dx.doi.org/10.1117/12.317293.

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Perera, A. G. Unil. "Homojunction interfacial workfunction internal photoemission (HIWIP) infrared detectors." In SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, edited by Randolph E. Longshore, Jan W. Baars, Avishai Kepten, and John M. Trombetta. SPIE, 1995. http://dx.doi.org/10.1117/12.218183.

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Yahia, A. H., M. W. Wanlass, and T. J. Coutts. "Modeling and simulation of InP homojunction solar cells." In Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference. IEEE, 1988. http://dx.doi.org/10.1109/pvsc.1988.105793.

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Bueno-Blanco, Carlos, Simon A. Svatek, Der-Yuh Lin, Mario Martinez, Kenji Watanabe, Takashi Taniguchi, and Elisa Antolin. "Enabling high efficiencies in MoS2 homojunction solar cells." In 2021 IEEE 48th Photovoltaic Specialists Conference (PVSC). IEEE, 2021. http://dx.doi.org/10.1109/pvsc43889.2021.9518851.

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Reports on the topic "Homojunction"

1

Parkinson, Bruce. Final Report: A Novel Tandem Homojunction Solar Cell, July 1, 1995 - June 30, 1999. Office of Scientific and Technical Information (OSTI), June 1999. http://dx.doi.org/10.2172/765716.

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