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Journal articles on the topic 'Homojunction'

Author: Grafiati

Published: 4 June 2021

Last updated: 28 May 2022

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1

Jayathilaka, Charith, Loku Singgappulige Rosantha Kumara, Koji Ohara, Chulho Song, Shinji Kohara, Osami Sakata, Withana Siripala, and Sumedha Jayanetti. "Enhancement of Solar Cell Performance of Electrodeposited Ti/n-Cu2O/p-Cu2O/Au Homojunction Solar Cells by Interface and Surface Modification." Crystals 10, no. 7 (July 13, 2020): 609. http://dx.doi.org/10.3390/cryst10070609.

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Cuprous oxide (Cu2O) homojunction thin films on Ti substrates were fabricated by an electrochemical deposition in which a p-Cu2O layer was deposited on an n-Cu2O layer by carefully controlled bath conditions. It was found that the open-circuit voltage of the homojunction solar cell was significantly influenced by the pH of the lactate bath. The variation of the pH was used to achieve the best possible crystal orientation for homojunctions. The crystallinity and morphology of the products were characterized by X-ray diffraction (XRD), high-energy x-ray diffraction (HEXRD), and scanning electron microscopy (SEM). The current density voltage (J-V) analysis showed that the sulfur treatment and annealing enhanced the photocurrent by ten-fold compared to the untreated and unannealed homojunction solar cell. X-ray photoelectron spectroscopy (XPS) studies confirmed that the sulfur treatment eliminated the surface CuO and formed a thin layer of CuS, which was very useful to make the front Ohmic contact. Transient measurements confirmed that the p-type Cu2O layer, which was subjected to sulfur treatment, significantly reduced the recombination, thus enhancing the efficiency of the solar cell. The best sulfur treated annealed Ti/n-Cu2O/p-Cu2O/Au solar cell produced an energy conversion efficiency of 2.64% with an open-circuit voltage of 490 mV and a short circuit current density of 12.8 mA cm−2 under AM 1.5 illumination.

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2

Ye, Qiannan, Xu Zhang, Dong Guo, Wei Xu, Honglong Ning, Tian Qiu, Jinxiong Li, Danqing Hou, Rihui Yao, and Junbiao Peng. "Preparation of Highly Transparent (at 450–800 nm) SnO2 Homojunction by Solution Method and Its Photoresponse." Coatings 10, no. 4 (April 17, 2020): 399. http://dx.doi.org/10.3390/coatings10040399.

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High-quality SnO2:Si films and SnO2:10 at.% Ga films were prepared by the solution method. The roughness of films is below 1.08 nm, and possess exceptional transparency (>75%) and decent semiconductor properties. Based on this, the SnO2:Si/SnO2: Ga homojunctions with different Si doping concentrations were prepared. It is found that the conductivity of the SnO2:Si thin film gradually increases, and the rectification characteristics of the homojunction are optimized with increasing Si doping content. The SnO2:15 at.% Si/SnO2:10 at.% Ga homogeneous junction has the best performance, the turn-on voltage is as low as 5.6 V, and it also exhibits good unidirectional conductivity. The photoresponse of the SnO2:15 at.% Si/SnO2:10 at.% Ga homojunction under the lights of red, yellow, and purple was explored respectively. The result shows that the device responds strongly to purple light. Compared with the test results in the dark environment, the device current increases by two orders, which is expected to be applied in the field of near-ultraviolet detection.

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3

Qiao, Mengzhu, Hongjin Liu, Jun Lv, Guangqing Xu, Xinyi Zhang, Xia Shu, and Yucheng Wu. "Enhanced Visible-Light Photocatalytic Remediation of Tetracycline Hydrochloride by Nanostructured BiOI Homojunctions." Nano 14, no. 09 (September 2019): 1950112. http://dx.doi.org/10.1142/s1793292019501121.

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The BiOI homojunctions were constructed between BiOI nanosheets and BiOI nanoflowers, which were prepared with a facile ultrasound-assisted solvothermal method. BiOI nanosheets were uniformly distributed on BiOI nanoflowers surface. The homojunction structure constructed between nanosheets and nanoflowers efficiently speeds up the transfer and separation of photoinduced charge carriers, which is beneficial to promote the photocatalytic activity. Compared with single BiOI, BiOI homojunctions exhibit remarkably improved photocatalytic degradation activity for tetracycline hydrochloride (TC); photodegradation rate of 69.43% for TC has been reached after being irradiated under visible light for 1[Formula: see text]h. Deeper analyses of photocatalytic degradation mechanism of TC have been conducted; the results identify that [Formula: see text] and h[Formula: see text] play important roles during the TC degradation reaction.

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4

Mao, Yuliang, Yuting Du, Zhipeng Huang, Guanhua Zhang, and Jianmei Yuan. "Computational Design of α-AsP/γ-AsP Vertical Two-Dimensional Homojunction for Photovoltaic Applications." Nanomaterials 12, no. 10 (May 13, 2022): 1662. http://dx.doi.org/10.3390/nano12101662.

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Based on first-principles calculations, we design a α-AsP/γ-AsP homojunction with minimum lattice distortion. It is found that the α-AsP/γ-AsP homojunction has an indirect bandgap with an intrinsic type-II band alignment. The proposed α-AsP/γ-AsP homojunction exhibits high optical absorption of 1.6×106 cm−1 along the zigzag direction. A high power conversion efficiency (PCE) of 21.08% is achieved in the designed α-AsP/γ-AsP homojunction, which implies it has potential applications in solar cells. Under 4% in-plane axial strain along the zigzag direction, a transition from indirect band gap to direct band gap is found in the α-AsP/γ-AsP homojunction. Moreover, the intrinsic type-II band alignment can be tuned to type-I band alignment under in-plane strain, which is crucial for its potential application in optical devices.

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5

Zhao, Haitao, Luyan Guo, Chuanwang Xing, Heyuan Liu, and Xiyou Li. "A homojunction–heterojunction–homojunction scaffold boosts photocatalytic H2 evolution over Cd0.5Zn0.5S/CoO hybrids." Journal of Materials Chemistry A 8, no. 4 (2020): 1955–65. http://dx.doi.org/10.1039/c9ta11915a.

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A hybrid photocatalyst was constructed based on twin crystal Cd_0.5Zn_0.5S with a homojunction containing M-CoO as the co-catalyst. The homojunction containing M-CoO is proved to be a more efficient co-catalyst than its pure phase counterparts.

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6

Liu, Zhiguo, Gang Wang, Hsueh-Shih Chen, and Ping Yang. "An amorphous/crystalline g-C3N4 homojunction for visible light photocatalysis reactions with superior activity." Chemical Communications 54, no. 37 (2018): 4720–23. http://dx.doi.org/10.1039/c8cc01824c.

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An amorphous/crystalline g-C₃N₄ homojunction was prepared for the first time at high temperature, in which the ratio of crystalline g-C₃N₄ in the homojunction was optimized.

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7

Chew, Yi-Hao, Boon-Junn Ng, Xin Ying Kong, Lutfi Kurnianditia Putri, Jie-Yinn Tang, Lling-Lling Tan, and Siang-Piao Chai. "Interfacial engineering of a zinc blende/wurtzite homojunction photocatalyst through hybridization with a cobalt phosphide co-catalyst for enhanced visible-light-driven photocatalytic H2 evolution." Sustainable Energy & Fuels 4, no. 4 (2020): 1822–27. http://dx.doi.org/10.1039/c9se00800d.

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The synergy of integrating homojunction and heterojunction structures in one composite was demonstrated by combining CoP and ZB/WZ homojunction-containing Zn_0.5Cd_0.5S which showed a 20-times enhancement in photocatalytic H₂ evolution activity.

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8

Choa, F. S., and P. L. Liu. "Cascaded homojunction avalanche photodiodes." Fiber and Integrated Optics 7, no. 1 (January 1988): 1–15. http://dx.doi.org/10.1080/01468038808219347.

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9

Tanaka, Tooru, Masaki Miyabara, Katsuhiko Saito, Qi Xin Guo, Mitsuhiro Nishio, Kin M. Yu, and Wladek Walukiewicz. "Development of ZnTe-Based Solar Cells." Materials Science Forum 750 (March 2013): 80–83. http://dx.doi.org/10.4028/www.scientific.net/msf.750.80.

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ZnTe solar cells with homojunction and heterojunction structures have been developed. Homojunction was fabricated by thermal diffusion of Al into p-ZnTe, and the effect of the diffusion temperature on the photovoltaic (PV) properties was investigated. The highest efficiency was obtained by lowering the diffusion temperature and using p-ZnTe substrate with a low hole concentration. For the heterojunction solar cell, n-ZnO/i-ZnTe/p-ZnTe structure was fabricated, and PV properties were characterized.

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10

Tada, Hiroaki, and Shin-Ichi Naya. "Atomic Level Interface Control of SnO2-TiO2 Nanohybrids for the Photocatalytic Activity Enhancement." Catalysts 11, no. 2 (February 3, 2021): 205. http://dx.doi.org/10.3390/catal11020205.

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This review article highlights atom-level control of the heterojunction and homojunction in SnO2-TiO2 nanohybrids, and the effects on the photocatalytic property. Firstly, a comprehensive description about the origin for the SnO2-TiO2 coupling effect on the photocatalytic activity in the conventional SnO2-TiO2 system without heteroepitaxial junction is provided. Recently, a bundle of thin SnO2 nanorods was hetero-epitaxially grown from rutile TiO2 seed nanocrystals (SnO2-NR#TiO2, # denotes heteroepitaxial junction). Secondly, the heterojunction effects of the SnO2-NR#TiO2 system on the photocatalytic activity are dealt with. A novel nanoscale band engineering through the atom-level control of the heterojunction between SnO2 and TiO2 is presented for the photocatalytic activity enhancement. Thirdly, the homojunction effects of the SnO2 nanorods on the photocatalytic activity of the SnO2-NR#TiO2 system and some other homojunction systems are discussed. Finally, we summarize the conclusions with the possible future subjects and prospects.

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11

Kim, Jun Hyoung, Tadashi Kawazoe, and Motoichi Ohtsu. "GaP Homojunction LEDs Fabricated by Dressed-Photon-Phonon-Assisted Annealing." Advances in Optical Technologies 2015 (February 2, 2015): 1–8. http://dx.doi.org/10.1155/2015/236014.

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By using a homojunction-structured GaP single crystal, we generated a photon energy higher than the bandgap energy (2.26 eV). The device was fabricated by performing dressed-photon-phonon- (DPP-) assisted annealing, while applying a forward-bias current, on a p-n homojunction structure formed by implanting a dopant (Zn) into an n-type GaP substrate. The DPP-assisted annealing increased the light emission intensity in an energy band above 2.32 eV by at least 550% compared with that before annealing.

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12

Nagata, Kengo, Satoshi Anada, Yoshiki Saito, Maki Kushimoto, Yoshio Honda, Tetsuya Takeuchi, Kazuo Yamamoto, Tsukasa Hirayama, and Hiroshi Amano. "Visualization of depletion layer in AlGaN homojunction p–n junction." Applied Physics Express 15, no. 3 (February 21, 2022): 036504. http://dx.doi.org/10.35848/1882-0786/ac53e2.

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Abstract We analyzed the p–n junction of an aluminum gallium nitride (AlGaN) homojunction tunnel junction (TJ) deep-ultraviolet light-emitting diode by phase-shifting electron holography. We clearly obtained a phase image reflecting the band alinement of the p–n homojunction and derived a depletion layer width of approximately 10 nm. In addition, the observed depletion layer width for the AlGaN TJ was in good agreement with the simulated one reflecting the diffusion profile of Mg and Si, thus enabling a discussion on the electrical conduction mechanism for an AlGaN p–n junction.

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13

Izawa, Seiichiro, Armand Perrot, Ji-Hyun Lee, and Masahiro Hiramoto. "Organic pn homojunction solar cell." Organic Electronics 71 (August 2019): 45–49. http://dx.doi.org/10.1016/j.orgel.2019.04.039.

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14

Tracy, Corey, and Jun Gao. "Polymer bulk homojunction photonic devices." Applied Physics Letters 87, no. 14 (October 3, 2005): 143502. http://dx.doi.org/10.1063/1.2077852.

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15

Katerinchuk, V. N., and M. Z. Kovalyuk. "InSe p-n Homojunction Diodes." Physica Status Solidi (a) 133, no. 1 (September 16, 1992): K45—K48. http://dx.doi.org/10.1002/pssa.2211330128.

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16

Matei, Elena, Lucian Ion, Stefan Antohe, Reinhard Neumann, and Ionut Enculescu. "Multisegment CdTe nanowire homojunction photodiode." Nanotechnology 21, no. 10 (February 16, 2010): 105202. http://dx.doi.org/10.1088/0957-4484/21/10/105202.

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17

Wu, Yanqing. "An ambipolar homojunction with options." Nature Electronics 3, no. 7 (July 2020): 356–57. http://dx.doi.org/10.1038/s41928-020-0447-3.

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18

Ahmadi, Mohammad Taghi, Meisam Rahmani, Mahdiar Ghadiry, and Razali Ismail. "Monolayer Graphene Nanoribbon Homojunction Characteristics." Science of Advanced Materials 4, no. 7 (July 1, 2012): 753–56. http://dx.doi.org/10.1166/sam.2012.1367.

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19

Lee, Ji-Hyun, Armand Perrot, Masahiro Hiramoto, and Seiichiro Izawa. "Photoconversion Mechanism at the pn-Homojunction Interface in Single Organic Semiconductor." Materials 13, no. 7 (April 7, 2020): 1727. http://dx.doi.org/10.3390/ma13071727.

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Clarifying critical differences in free charge generation and recombination processes between inorganic and organic semiconductors is important for developing efficient organic photoconversion devices such as solar cells (SCs) and photodetector. In this study, we analyzed the dependence of doping concentration on the photoconversion process at the organic pn-homojunction interface in a single organic semiconductor using the temperature dependence of J–V characteristics and energy structure measurements. Even though the organic pn-homojunction SC devices were fabricated using a single host material and the doping technique resembling an inorganic pn-homojunction, the charge generation and recombination mechanisms are similar to that of conventional donor/acceptor (D/A) type organic SCs; that is, the charge separation happens from localized exciton and charge transfer (CT) state being separated by the energy offset between adjacent molecules, and the recombination happens from localized charge carrier at two adjacent molecules. The determining factor for photoconversion processes is the localized nature of charges in organic semiconductors. The results demonstrated that controlling the delocalization of the charges is important to realize efficient organic photoconversion devices.

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20

Li, Hong, Jiakun Liang, Peipei Xu, Jing Luo, and Fengbin Liu. "Vertically stacked SnSe homojunctions and negative capacitance for fast low-power tunneling transistors." RSC Advances 10, no. 35 (2020): 20801–8. http://dx.doi.org/10.1039/d0ra03279d.

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21

Martha, Satyabadi, Sriram Mansingh, K. M. Parida, and Arun Thirumurugan. "Exfoliated metal free homojunction photocatalyst prepared by a biomediated route for enhanced hydrogen evolution and Rhodamine B degradation." Materials Chemistry Frontiers 1, no. 8 (2017): 1641–53. http://dx.doi.org/10.1039/c7qm00055c.

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22

Shen, Lian, Xiao Lin, Runren Zhang, Xu Liu, Shisheng Lin, and Hongsheng Chen. "Photonic transport in a graphene van der Waals homojunction." Journal of Materials Chemistry C 3, no. 41 (2015): 10879–85. http://dx.doi.org/10.1039/c5tc01937k.

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23

Deng, Wenjie, Yi Wang, Congya You, Yongfeng Chen, and Yongzhe Zhang. "Field enhanced in-plane homostructure in a pure MoSe2 phototransistor for the efficient separation of photo-excited carriers." Journal of Materials Chemistry C 7, no. 5 (2019): 1182–87. http://dx.doi.org/10.1039/c8tc04783a.

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24

Kim, M. M., M. H. Kim, S. m. Ryu, J. H. Lim, and D. K. Choi. "Coplanar homojunction a-InGaZnO thin film transistor fabricated using ultraviolet irradiation." RSC Advances 5, no. 101 (2015): 82947–51. http://dx.doi.org/10.1039/c5ra16443e.

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25

Yu, Qing, Xianguang Meng, Li Shi, Guigao Liu, Peng Li, and Jinhua Ye. "Hematite homojunctions without foreign element doping for efficient and stable overall water splitting." RSC Advances 6, no. 67 (2016): 62263–69. http://dx.doi.org/10.1039/c6ra13060g.

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26

Lu, Bo, Fangyi Zhan, Guodong Gong, Yali Cao, Qiang Zhen, and Pengfei Hu. "Room-temperature mechanochemical synthesis of silver nanoparticle homojunction assemblies for the surface-enhanced Raman scattering substrate." RSC Advances 6, no. 78 (2016): 74662–69. http://dx.doi.org/10.1039/c6ra14603a.

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27

Bista, Dinesh, Vikas Chauhan, Turbasu Sengupta, Arthur C. Reber, and Shiv N. Khanna. "A ligand-induced homojunction between aluminum-based superatomic clusters." Nanoscale 12, no. 22 (2020): 12046–56. http://dx.doi.org/10.1039/d0nr02611e.

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28

Wang, Qiang, Yali Zhao, Panlong Qiu, Chao Wu, Jiangshan Chen, and Dongge Ma. "Highly efficient homojunction organic light-emitting diodes." Journal of Materials Chemistry C 3, no. 26 (2015): 6862–67. http://dx.doi.org/10.1039/c5tc01189b.

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29

Armin, Ardalan, Dani M. Stoltzfus, Jenny E. Donaghey, Andrew J. Clulow, Ravi Chandra Raju Nagiri, Paul L. Burn, Ian R. Gentle, and Paul Meredith. "Engineering dielectric constants in organic semiconductors." Journal of Materials Chemistry C 5, no. 15 (2017): 3736–47. http://dx.doi.org/10.1039/c7tc00893g.

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30

Chen, Jing, Meili Guan, Xuan Zhang, and Xuezhong Gong. "Insights into a rutile/brookite homojunction of titanium dioxide: separated reactive sites and boosted photocatalytic activity." RSC Advances 9, no. 63 (2019): 36615–20. http://dx.doi.org/10.1039/c9ra07483j.

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31

Feng, Qiu-Ju, Hong-Wei Liang, Yi-Ying Mei, Jia-Yuan Liu, C. C. Ling, Peng-Cheng Tao, De-Zhu Pan, and Yu-Qi Yang. "ZnO single microwire homojunction light emitting diode grown by electric field assisted chemical vapor deposition." Journal of Materials Chemistry C 3, no. 18 (2015): 4678–82. http://dx.doi.org/10.1039/c4tc02878c.

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32

Zheng, Xiaoming, Yuehua Wei, Jinxin Liu, Shitan Wang, Jiao Shi, Hang Yang, Gang Peng, et al. "A homogeneous p–n junction diode by selective doping of few layer MoSe2 using ultraviolet ozone for high-performance photovoltaic devices." Nanoscale 11, no. 28 (2019): 13469–76. http://dx.doi.org/10.1039/c9nr04212a.

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33

Baek, Sung-Doo, Yoann Porte, Yun Cheol Kim, and Jae-Min Myoung. "Fabrication of ZnO homojunction-based color-switchable bidirectional LEDs by using a hydrothermal growth method." Journal of Materials Chemistry C 5, no. 36 (2017): 9479–87. http://dx.doi.org/10.1039/c7tc02645e.

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34

Tang, Yan, Yuxiang Zhang, Guanshun Xie, Youxiong Zheng, Jianwei Yu, Li Gao, and Bingxin Liu. "Construction of Rutile-TiO2 Nanoarray Homojuction for Non-Contact Sensing of TATP under Natural Light." Coatings 10, no. 4 (April 20, 2020): 409. http://dx.doi.org/10.3390/coatings10040409.

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Triacetone triperoxide (TATP) is a new terrorist explosive, and most nitrogen-based sensors fail to detect TATP. Herein, a sea urchin-like TiO2-covered TiO2 nanoarray is constructed as a TATP-sensitive homojunction (HJ) by one step hydrothermal method. By taking fluorine-doped tin oxide (FTO) and indium tin oxide (ITO) conducting glass as the substrate, the conducting glass is horizontally and vertically put in the reactor to epitaxially grow TiO2–FTO, TiO2–ITO, TiO2–FTO–HJ and TiO2–ITO–HJ. TiO2–FTO–HJ shows a broad absorption band edge in the visible region and high sensitivity to TATP under the simulating natural light compared with TiO2–FTO, TiO2–ITO, and TiO2–ITO–HJ. E-field intensity distribution simulation reveals that constructing homojunctions between the urchin-shaped TiO2 nanosphere and TiO2 nanoarrays can enhance the localized electromagnetic field intensity at the interface of junctions, which may provide photocatalysis active sites to reduce TATP molecules by promoting charge separation. Moreover, the TiO2–FTO–HJ shows high selectivity to TATP among ammonium nitrate, urea and sulfur, which are common homemade explosive raw materials.

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35

Aftab, Sikandar, Muhammad Farooq Khan, Praveen Gautam, Hwayong Noh, and Jonghwa Eom. "MoTe2 van der Waals homojunction p–n diode with low resistance metal contacts." Nanoscale 11, no. 19 (2019): 9518–25. http://dx.doi.org/10.1039/c8nr10526j.

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36

Marsi, M., S. La Rosa, Y. Hwu, F. Gozzo, C. Coluzza, A. Baldereschi, G. Margaritondo, J. T. McKinley, S. Baroni, and R. Resta. "Microscopic manipulation of homojunction band lineups." Journal of Applied Physics 71, no. 4 (February 15, 1992): 2048–50. http://dx.doi.org/10.1063/1.351152.

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37

Baltakesmez, Ali, Süleyman Tekmen, and Sebahattin Tüzemen. "ZnO homojunction white light-emitting diodes." Journal of Applied Physics 110, no. 5 (September 2011): 054502. http://dx.doi.org/10.1063/1.3627247.

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38

Tribolet, P. "Progress in HgCdTe homojunction infrared detectors." Journal of Crystal Growth 184-185, no. 1-2 (February 1998): 1262–71. http://dx.doi.org/10.1016/s0022-0248(97)00759-8.

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39

Tribolet, P., J. P. Chatard, P. Costa, and A. Manissadjian. "Progress in HgCdTe homojunction infrared detectors." Journal of Crystal Growth 184-185 (February 1998): 1262–71. http://dx.doi.org/10.1016/s0022-0248(98)80263-7.

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40

Yamamoto, Akio, Masafumi Yamaguchi, and Chikao Uemura. "High efficiency homojunction InP solar cells." Applied Physics Letters 47, no. 9 (November 1985): 975–77. http://dx.doi.org/10.1063/1.95949.

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41

Liu, K. W., D. Z. Shen, C. X. Shan, J. Y. Zhang, B. Yao, D. X. Zhao, Y. M. Lu, and X. W. Fan. "Zn0.76Mg0.24O homojunction photodiode for ultraviolet detection." Applied Physics Letters 91, no. 20 (November 12, 2007): 201106. http://dx.doi.org/10.1063/1.2805816.

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42

Tanaka, Tooru, Kin M. Yu, Peter R. Stone, Jeffrey W. Beeman, Oscar D. Dubon, Lothar A. Reichertz, Vincent M. Kao, Mitsuhiro Nishio, and Wladek Walukiewicz. "Demonstration of homojunction ZnTe solar cells." Journal of Applied Physics 108, no. 2 (July 15, 2010): 024502. http://dx.doi.org/10.1063/1.3463421.

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43

Watanabe, H., C. E. Nebel, and S. Shikata. "Isotopic Homojunction Band Engineering from Diamond." Science 324, no. 5933 (June 11, 2009): 1425–28. http://dx.doi.org/10.1126/science.1172419.

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44

Yue, Guanghui, Youdao Lin, Xin Wen, Laisen Wang, and Dongliang Peng. "SnS homojunction nanowire-based solar cells." Journal of Materials Chemistry 22, no. 32 (2012): 16437. http://dx.doi.org/10.1039/c2jm32116e.

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45

Sun, Ye, Neil A. Fox, Gareth M. Fuge, and Michael N. R. Ashfold. "Toward a Single ZnO Nanowire Homojunction." Journal of Physical Chemistry C 114, no. 49 (November 23, 2010): 21338–41. http://dx.doi.org/10.1021/jp109108f.

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46

Wang, Zhen, Yunfeng Chen, Peisong Wu, Jiafu Ye, Meng Peng, Ye Yan, Fang Zhong, et al. "High-performance MoSe2 homojunction infrared photodetector." Infrared Physics & Technology 106 (May 2020): 103272. http://dx.doi.org/10.1016/j.infrared.2020.103272.

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47

Ahmad, Habib, Zachary Engel, Christopher M. Matthews, Sangho Lee, and W. Alan Doolittle. "Realization of homojunction PN AlN diodes." Journal of Applied Physics 131, no. 17 (May 7, 2022): 175701. http://dx.doi.org/10.1063/5.0086314.

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Aluminum nitride (AlN) is an insulator that has shown little promise to be converted to a semiconductor via impurity doping. Some of the historic challenges for successfully doping AlN include a reconfigurable defect formation known as a DX center and subsequent compensation that causes an increase in dopant activation energy resulting in very few carriers of electricity, electrons, or holes, rendering doping inefficient. Using crystal synthesis methods that generate less compensating impurities and less lattice expansion, thus impeding the reconfiguration of dopants, and using new dopants, we demonstrate: (a) well behaved bulk semiconducting functionality in AlN, the largest direct bandgap semiconductor known with (b) substantial bulk p-type conduction (holes = 3.1 × 1018 cm−3, as recently reported in our prior work), (c) dramatic improvement in n-type bulk conduction (electrons = 6 × 1018 cm−3, nearly 6000 times the prior state-of-the-art), and (d) a PN AlN diode with a nearly ideal turn-on voltage of ∼6 V for a 6.1 eV bandgap semiconductor. A wide variety of AlN-based applications are enabled that will impact deep ultraviolet light-based viral and bacterial sterilization, polymer curing, lithography, laser machining, high-temperature, high-voltage, and high-power electronics.

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Liu, Maochang, Bin Wang, Yiqun Zheng, Fei Xue, Yubin Chen, and Liejin Guo. "Transformation of zincblende nanoparticles into wurtzite microrods by a dissolution–regrowth process: an intergrowth homojunction with enhanced photocatalytic activity." Catalysis Science & Technology 6, no. 10 (2016): 3371–77. http://dx.doi.org/10.1039/c6cy00298f.

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Yang, Sujeong, Geonyeop Lee, Janghyuk Kim, Seunghoon Yang, Chul-Ho Lee, and Jihyun Kim. "An in-plane WSe2 p–n homojunction two-dimensional diode by laser-induced doping." Journal of Materials Chemistry C 8, no. 25 (2020): 8393–98. http://dx.doi.org/10.1039/d0tc01790f.

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Terenti, Natalia, Gavril-Ionel Giurgi, Andreea Petronela Crişan, Cǎtǎlin Anghel, Alexandra Bogdan, Alexandra Pop, Ioan Stroia, et al. "Structure–properties of small donor–acceptor molecules for homojunction single-material organic solar cells." Journal of Materials Chemistry C 10, no. 14 (2022): 5716–26. http://dx.doi.org/10.1039/d2tc00430e.

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