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Journal articles on the topic 'Hydrogen termination'

Author: Grafiati

Published: 4 June 2021

Last updated: 16 February 2022

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1

MUBARAK, A. A. KARIM, and MAHMOUD ALELAIMI. "HYDROGEN ADSORPTION ON β-TiAl (001) AND Ni/TiAl (001) SURFACES." Surface Review and Letters 21, no. 03 (June 2014): 1450034. http://dx.doi.org/10.1142/s0218625x14500346.

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In this paper, we present first principles calculations of the energetic, electronic and magnetic properties of the variant termination of TiAl (001) and Ni / TiAl (001) surfaces with and without hydrogen atoms. The calculations have been performed within the density functional theory using full-potential linearized augmented plane wave method. The generalized gradient approximation (GGA) is utilized as the exchange-correlation energy. The octahedral site is the stable absorption site of H atom in the β- TiAl system. This absorption reduces the cohesive energy of β- TiAl system due to increase in the lattice constant. The surface energy for both TiAl (001) terminations is calculated. The stable adsorption site of H atoms on the variant termination of TiAl (001) surface is performed. The adsorption energy of hydrogen on Ti is more energetic than that on Al . The adsorption of H atom on both terminations of H / Ni / TiAl (001) is more preferable at the bridge site. The adsorption energies are enhanced on Ni atom due to the contraction between d- Ni bands and TiAl substrate band.

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2

Chyan, Oliver M. R., Junjun Wu, and Jin-Jian Chen. "Comparative Studies of Hydrogen Termination on Single-Crystal Silicon Surfaces by FT-IR and Contact-Angle Measurements." Applied Spectroscopy 51, no. 12 (December 1997): 1905–9. http://dx.doi.org/10.1366/0003702971939730.

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The hydrogen termination process on a Si(100) surface has been studied by multiple internal reflection infrared spectroscopy (MIR-IS) and contact-angle measurements. Three main silicon hydride absorption peaks at 2087, 2104, and 2114 cm−1 were found to gradually increase with the hydrofluoric (HF) acid etching. Eventually, a constant peak height was reached as an indication of complete hydrogen termination. Integration of all the surface hydrides absorption peaks (2000 to 2200 cm−1) provides direct quantitative evaluation of the hydrogen termination process. On the other hand, water contact-angle data were shown to consistently lag behind the IR measurement in determining the extent of hydrogen termination on the silicon surface. Analysis of the surface free energy of HF-etched silicon surfaces indicates that the degree of the hydrogen termination determined by water contact-angle measurements is subjected to inaccuracies due to the preferential hydrogen-bonding interaction between the water and silicon surface oxide.

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3

Hoffmann, René, Armin Kriele, Harald Obloh, Jakob Hees, Marco Wolfer, Waldemar Smirnov, Nianjun Yang, and Christoph E. Nebel. "Electrochemical hydrogen termination of boron-doped diamond." Applied Physics Letters 97, no. 5 (August 2, 2010): 052103. http://dx.doi.org/10.1063/1.3476346.

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4

Hirama, Kazuyuki, Yoshikatsu Jingu, Masaru Ichikawa, Hitoshi Umezawa, and Hiroshi Kawarada. "DC and RF Performance of Diamond MISFETs with Alumina Gate Insulator." Materials Science Forum 600-603 (September 2008): 1349–51. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.1349.

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We fabricated diamond MISFETs on polycrystalline films using alumina gate insulator. A hole accumulation layer has been utilized as hole current channel. The hydrogen-termination was achieved by remote hydrogen plasma. The sheet resistance strongly depends on the substrate temperature during hydrogen-termination process. The polycrystalline diamond MISFETs showed high drain current density of -650 mA/mm and cut-off frequency of 42 GHz. These values are higher than those of single crystal diamond FETs ever reported.

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5

Gruntman, Mike. "Ionization of Interstellar Hydrogen Beyond the Termination Shock." Journal of Physics: Conference Series 767 (November 2016): 012012. http://dx.doi.org/10.1088/1742-6596/767/1/012012.

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6

Mosińska, Lidia, Paweł Popielarski, Kazimierz Fabisiak, and Anna Dychalska. "Effects of hydrogen termination of CVD diamond layers." Optical Materials 101 (March 2020): 109676. http://dx.doi.org/10.1016/j.optmat.2020.109676.

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7

Seyller, Thomas. "Passivation of hexagonal SiC surfaces by hydrogen termination." Journal of Physics: Condensed Matter 16, no. 17 (April 17, 2004): S1755—S1782. http://dx.doi.org/10.1088/0953-8984/16/17/016.

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8

Higashi, G. S., Y. J. Chabal, G. W. Trucks, and Krishnan Raghavachari. "Ideal hydrogen termination of the Si (111) surface." Applied Physics Letters 56, no. 7 (February 12, 1990): 656–58. http://dx.doi.org/10.1063/1.102728.

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9

Wongprasert, Y., and S. B. Pongsai. "Characteristics of Synthesized Diamond Films by Using CACVD Techniques at High Temperatures." Key Engineering Materials 421-422 (December 2009): 131–34. http://dx.doi.org/10.4028/www.scientific.net/kem.421-422.131.

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This paper presents synthesized diamond films by using combustion activated chemical vapor deposition (CACVD) techniques. The characteristics of diamond films have been studied at wide ranges of temperature (30-400°C). The resistance of diamond films has been determined for hydrogen termination times of 5, 10, 15, and 20 minutes, and at the operation temperatures of 500, 600, and 700°C. The investigation found that, at 30°C a synthesized diamond film has a high resistance (1010 ), whereas at high temperatures (100-400°C) the resistance has decreased from 4.04 M to 2.42 M. The result obtained from the hydrogen termination showed that the resistance has decreased by 105-106  (at 30°C). Summarily, it can be stated that the higher the hydrogen termination times and operation temperatures, the lower the resistance of diamond films.

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10

Kasper, S., M. T. J. van der Meer, A. Mets, R. Zahn, J. S. Sinninghe Damsté, and S. Schouten. "Salinity changes in the Agulhas leakage area recorded by stable hydrogen isotopes of C<sub>37</sub> alkenones during Termination I and II." Climate of the Past 10, no. 1 (February 5, 2014): 251–60. http://dx.doi.org/10.5194/cp-10-251-2014.

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Abstract. At the southern tip of Africa, the Agulhas Current reflects back into the Indian Ocean causing so-called "Agulhas rings" to spin off and release relatively warm and saline water into the South Atlantic Ocean. Previous reconstructions of the dynamics of the Agulhas Current, based on paleo-sea surface temperature and sea surface salinity proxies, inferred that Agulhas leakage from the Indian Ocean to the South Atlantic was reduced during glacial stages as a consequence of shifted wind fields and a northwards migration of the subtropical front. Subsequently, this might have led to a buildup of warm saline water in the southern Indian Ocean. To investigate this latter hypothesis, we reconstructed sea surface salinity changes using alkenone δD, and paleo-sea surface temperature using TEXH86 and UK'37, from two sediment cores (MD02-2594, MD96-2080) located in the Agulhas leakage area during Termination I and II. Both UK'37 and TEXH86 temperature reconstructions indicate an abrupt warming during the glacial terminations, while a shift to more negative δDalkenone values of approximately 14‰ during glacial Termination I and II is also observed. Approximately half of the isotopic shift can be attributed to the change in global ice volume, while the residual isotopic shift is attributed to changes in salinity, suggesting relatively high salinities at the core sites during glacials, with subsequent freshening during glacial terminations. Approximate estimations suggest that δDalkenone represents a salinity change of ca. 1.7–1.9 during Termination I and Termination II. These estimations are in good agreement with the proposed changes in salinity derived from previously reported combined planktonic Foraminifera δ18O values and Mg/Ca-based temperature reconstructions. Our results confirm that the δD of alkenones is a potentially suitable tool to reconstruct salinity changes independent of planktonic Foraminifera δ18O.

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11

Kasper, S., M. T. J. van der Meer, A. Mets, R. Zahn, J. S. Sinninghe Damsté, and S. Schouten. "Salinity changes in the Agulhas leakage area recorded by stable hydrogen isotopes of C<sub>37</sub> alkenones during Termination I and II." Climate of the Past Discussions 9, no. 3 (June 18, 2013): 3209–38. http://dx.doi.org/10.5194/cpd-9-3209-2013.

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Abstract. At the southern tip of the African shelf, the Agulhas Current reflects back into the Indian Ocean causing so called "Agulhas rings" to spin off and release relatively warm and saline water into the South Atlantic Ocean. Previous reconstructions of the dynamics of the Agulhas current, based on paleo sea surface temperature and sea surface salinity proxies, inferred that Agulhas leakage from the Indian Ocean to the South Atlantic is reduced as a consequence of changes in wind fields related to a northwards migration of ice masses and the subtropical front during glacial stages. Subsequently, this might have led to a build-up of warm saline water in the southern Indian Ocean. To investigate this latter hypothesis, we reconstructed sea surface salinity changes using alkenone δ D, and paleo sea surface temperature using TEXH86 and UK'37, from two sediment cores (MD02-2594, MD96-2080) located in the Agulhas leakage area during Termination I and II. Both UK'37 and TEXH86 temperature reconstructions infer an abrupt warming during the glacial terminations, which is different from the gradual warming trend previously reconstructed based on Mg/Ca ratios of Globigerina bulloides. These differences in temperature reconstructions might be related to differences in the growth season or depth habitat between organisms. A shift to more negative δ Dalkenone values of approximately 14‰ during glacial Termination I and approximately 13‰ during Termination II is also observed. Approximately half of these shifts can be attributed to the change in global ice volume, while the residual isotopic shift is attributed to changes in salinity, suggesting relatively high salinities at the core sites during glacials, with subsequent freshening during glacial terminations. Approximate estimations suggest that δ Dalkenone represents a salinity change of ca. 1.7–2 during Termination I and ca. 1.5–1.7 during Termination II. These estimations are in good agreement with the proposed changes in salinity derived from previously reported combined planktonic foraminifera δ18O values and Mg/Ca-based temperature reconstructions. Our results show that the δ D of alkenones is a potentially suitable tool to reconstruct salinity changes independent of planktonic foraminifera δ18O.

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12

Cosme, Ismael, Andrey Kosarev, Saraí Zarate-Galvez, Hiram E. Martinez, Svetlana Mansurova, and Yuri Kudriavtsev. "Study of Si and Ge Atoms Termination Using H-Dilution in SiGe:H Alloys Deposited by Radio Frequency (13.56 MHz) Plasma Discharge at Low Temperature." Materials 13, no. 5 (February 26, 2020): 1045. http://dx.doi.org/10.3390/ma13051045.

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In this work, we present the study of the atomic composition in amorphous SiXGeY:HZ films deposited by radio frequency (RF—13.56 MHz) plasma discharge at low deposition temperature. A study and control of Si and Ge atoms termination using H-dilution in SiGe:H alloys deposited by RF plasma discharge was conducted and we made a comparison with low-frequency plasma discharge studies. Solid contents of the main elements and contaminants were determined by SIMS technique. It was found that for low dilution rates from RH = 9 to 30, the germanium content in the solid phase strongly depends on the hydrogen dilution and varies from Y = 0.49 to 0.68. On the other hand, with a higher presence of hydrogen in the mixture, the germanium content does not change and remains close to the value of Y = 0.69. The coefficient of Ge preferential incorporation depended on RH and varied from PGe = 0.8 to 4.3. Also, the termination of Si and Ge atoms with hydrogen was studied using FTIR spectroscopy. Preferential termination of Si atoms was observed in the films deposited with low RH < 20, while preferential termination of Ge atoms was found in the films deposited with high RH > 40. In the range of 20 < RH < 40, hydrogen created chemical bonds with both Si and Ge atoms without preference.

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13

TAKAHAGI, Takayuki. "Passivation of Si single-crystal surface by hydrogen termination." SHINKU 33, no. 11 (1990): 854–60. http://dx.doi.org/10.3131/jvsj.33.854.

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14

Lee, Alex W., Dong Le, Kosuke Matsuzaki, and Kenji Nomura. "Hydrogen-Defect Termination in SnO for p-Channel TFTs." ACS Applied Electronic Materials 2, no. 4 (April 4, 2020): 1162–68. http://dx.doi.org/10.1021/acsaelm.0c00149.

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15

Lindsay, Robert, Christopher A. Muryn, Ela Michelangeli, and Geoffrey Thornton. "ZnO–O surface structure: hydrogen-free (1×1) termination." Surface Science 565, no. 2-3 (September 2004): L283—L287. http://dx.doi.org/10.1016/j.susc.2004.07.014.

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16

Kawai, Takazumi, Yoshiyuki Miyamoto, Osamu Sugino, and Yoshinori Koga. "Graphitic ribbons without hydrogen-termination: Electronic structures and stabilities." Physical Review B 62, no. 24 (December 15, 2000): R16349—R16352. http://dx.doi.org/10.1103/physrevb.62.r16349.

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17

Burson, Amanda, Hans C. P. Matthijs, Wilco de Bruijne, Renee Talens, Ron Hoogenboom, Arjen Gerssen, Petra M. Visser, et al. "Termination of a toxic Alexandrium bloom with hydrogen peroxide." Harmful Algae 31 (January 2014): 125–35. http://dx.doi.org/10.1016/j.hal.2013.10.017.

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18

Bitzer, T., H. J. Lewerenz, M. Gruyters, and K. Jacobi. "Influence of pH in electrolytic hydrogen termination of silicon." Journal of Electroanalytical Chemistry 359, no. 1-2 (November 1993): 287–92. http://dx.doi.org/10.1016/0022-0728(93)80416-f.

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19

Niu, Kaifeng, Lifeng Chi, Johanna Rosen, and Jonas Björk. "C–H activation of light alkanes on MXenes predicted by hydrogen affinity." Physical Chemistry Chemical Physics 22, no. 33 (2020): 18622–30. http://dx.doi.org/10.1039/d0cp02471f.

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20

Pascu, Razvan, Mihaela Kusko, Florea Craciunoiu, Gheorghe Pristavu, Gheorghe Brezeanu, Marian Badila, and Viorel Avramescu. "A new 4H-SiC hydrogen sensor with oxide ramp termination." Materials Science in Semiconductor Processing 42 (February 2016): 268–72. http://dx.doi.org/10.1016/j.mssp.2015.08.019.

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21

Dogel, I. A., S. A. Dogel, J. L. Pitters, G. A. DiLabio, and R. A. Wolkow. "Chemical methods for the hydrogen termination of silicon dangling bonds." Chemical Physics Letters 448, no. 4-6 (November 2007): 237–42. http://dx.doi.org/10.1016/j.cplett.2007.10.001.

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22

YASUE, Tsuneo, Hiroyuki YOSHII, and Takanori KOSHIKAWA. "Hydrogen Termination Effect on the Growth of Cu/Si(111)." Hyomen Kagaku 17, no. 7 (1996): 401–5. http://dx.doi.org/10.1380/jsssj.17.401.

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23

Hall, D. T., D. E. Shemansky, D. L. Judge, P. Gangopadhyay, and M. A. Gruntman. "Heliospheric hydrogen beyond 15 AU: Evidence for a termination shock." Journal of Geophysical Research 98, A9 (1993): 15185. http://dx.doi.org/10.1029/93ja01175.

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24

O'keeffe, Patrick, Ciaran O'morain, Shuji Komuro, Masashi Ishii, Takashi Meguro, Yasufumi Iimura, Shoji Den, Takitaro Morikawa, and Yoshinobu Aoyagi. "Reversible Reconstruction Changes in GaAs Surfaces due to Hydrogen Termination." Japanese Journal of Applied Physics 31, Part 1, No. 10 (October 15, 1992): 3301–2. http://dx.doi.org/10.1143/jjap.31.3301.

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25

Brabant, P., J. Ferrara, B. Pagliaro, K. Weeks, M. Rittgers, R. Scott, Y. Zhang, et al. "Hydrogen termination for extended queue times for low temperature epitaxy." Applied Surface Science 255, no. 5 (December 2008): 1741–43. http://dx.doi.org/10.1016/j.apsusc.2008.06.025.

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26

Tuyen, Le Thi Trong, Phan Ngoc Minh, Emil Roduner, Pham Thi Duong Chi, Takahito Ono, Hidetoshi Miyashita, Phan Hong Khoi, and Masayoshi Esashi. "Hydrogen termination for the growth of carbon nanotubes on silicon." Chemical Physics Letters 415, no. 4-6 (November 2005): 333–36. http://dx.doi.org/10.1016/j.cplett.2005.09.014.

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27

Pietsch, G. J. "Hydrogen on Si: Ubiquitous surface termination after wet-chemical processing." Applied Physics A: Materials Science & Processing 60, no. 4 (March 1, 1995): 347–63. http://dx.doi.org/10.1007/s003390050112.

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28

Pietsch, G. J. "Hydrogen on Si: Ubiquitous surface termination after wet-chemical processing." Applied Physics A Materials Science & Processing 60, no. 4 (April 1995): 347–63. http://dx.doi.org/10.1007/bf01538334.

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29

Grant, Nicholas E., Alex I. Pointon, Richard Jefferies, Daniel Hiller, Yisong Han, Richard Beanland, Marc Walker, and John D. Murphy. "Atomic level termination for passivation and functionalisation of silicon surfaces." Nanoscale 12, no. 33 (2020): 17332–41. http://dx.doi.org/10.1039/d0nr03860a.

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The termination of silicon surfaces is studied from the nanometre to the centimetre scale, with differences in behaviour between hydrogen and fluorine terminated surfaces persisting after some subsequent surface passivation treatments.

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30

Wen, Guangxiang, Qiang Wang, Riguang Zhang, Debao Li, and Baojun Wang. "Insight into the mechanism about the initiation, growth and termination of the C–C chain in syngas conversion on the Co(0001) surface: a theoretical study." Physical Chemistry Chemical Physics 18, no. 39 (2016): 27272–83. http://dx.doi.org/10.1039/c6cp05139a.

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31

Yamanaka, Ayaka, and Susumu Okada. "Polarity control of h-BN nanoribbon edges by strain and edge termination." Physical Chemistry Chemical Physics 19, no. 13 (2017): 9113–17. http://dx.doi.org/10.1039/c6cp08818j.

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We studied the polarity of h-BN nano-flakes in terms of their edge geometries, edge hydrogen termination, and uniaxial strain by evaluating their electrostatic potential using density functional theory.

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32

Viera, J. C., M. González, B. Y. Liaw, F. J. Ferrero, J. C. Álvarez, J. C. Campo, and C. Blanco. "Characterization of 109Ah Ni–MH batteries charging with hydrogen sensing termination." Journal of Power Sources 171, no. 2 (September 2007): 1040–45. http://dx.doi.org/10.1016/j.jpowsour.2007.05.101.

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33

Kanemitsu, Yoshihiko, Takahiro Matsumoto, Toshiro Futagi, and Hidenori Mimura. "Hydrogen Termination and Optical Properties of Porous Silicon: Photochemical Etching Effect." Japanese Journal of Applied Physics 32, Part 1, No. 1B (January 30, 1993): 411–14. http://dx.doi.org/10.1143/jjap.32.411.

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34

Boiko, V. P., and V. K. Grishchenko. "Chain termination in diene polymerization in alcohol solution under hydrogen peroxide." Polymer journal 38, no. 1 (March 20, 2016): 61–65. http://dx.doi.org/10.15407/polymerj.38.01.061.

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35

Morita, Yukinori, and Hiroshi Tokumoto. "Ideal hydrogen termination of Si(001) surface by wet‐chemical preparation." Applied Physics Letters 67, no. 18 (October 30, 1995): 2654–56. http://dx.doi.org/10.1063/1.114326.

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36

Chalov, S. V. "Longitudinal distribution of anomalous hydrogen near the solar wind termination shock." Planetary and Space Science 41, no. 2 (February 1993): 133–36. http://dx.doi.org/10.1016/0032-0633(93)90041-y.

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37

Cross, Russell W., and Nelson Y. Dzade. "First-Principles Mechanistic Insights into the Hydrogen Evolution Reaction on Ni2P Electrocatalyst in Alkaline Medium." Catalysts 10, no. 3 (March 6, 2020): 307. http://dx.doi.org/10.3390/catal10030307.

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Nickel phosphide (Ni2P) is a promising material for the electrocatalytic generation of hydrogen from water. Here, we present a chemical picture of the fundamental mechanism of Volmer–Tafel steps in hydrogen evolution reaction (HER) activity under alkaline conditions at the (0001) and (10 1 ¯ 0) surfaces of Ni2P using dispersion-corrected density functional theory calculations. Two terminations of each surface (Ni3P2- and Ni3P-terminated (0001); and Ni2P- and NiP-terminated (10 1 ¯ 0)), which have been shown to coexist in Ni2P samples depending on the experimental conditions, were studied. Water adsorption on the different terminations of the Ni2P (0001) and (10 1 ¯ 0) surfaces is shown to be exothermic (binding energy in the range of 0.33−0.68 eV) and characterized by negligible charge transfer to/from the catalyst surface (0.01−0.04 e−). High activation energy barriers (0.86−1.53 eV) were predicted for the dissociation of water on each termination of the Ni2P (0001) and (10 1 ¯ 0) surfaces, indicating sluggish kinetics for the initial Volmer step in the hydrogen evolution reaction over a Ni2P catalyst. Based on the predicted Gibbs free energy of hydrogen adsorption (ΔGH*) at different surface sites, we found that the presence of Ni3-hollow sites on the (0001) surface and bridge Ni-Ni sites on the (10 1 ¯ 0) surface bind the H atom too strongly. To achieve facile kinetics for both the Volmer and Heyrovsky–Tafel steps, modification of the surface structure and tuning of the electronic properties through transition metal doping is recommended as an important strategy.

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38

Alba, Gonzalo, M. Pilar Villar, Rodrigo Alcántara, Javier Navas, and Daniel Araujo. "Surface States of (100) O-Terminated Diamond: Towards Other 1 × 1:O Reconstruction Models." Nanomaterials 10, no. 6 (June 18, 2020): 1193. http://dx.doi.org/10.3390/nano10061193.

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Diamond surface properties show a strong dependence on its chemical termination. Hydrogen-terminated and oxygen-terminated diamonds are the most studied terminations with many applications in the electronic and bioelectronic device field. One of the main techniques for the characterization of diamond surface terminations is X-ray photoelectron spectroscopy (XPS). In this sense, the use of angle-resolved XPS (ARXPS) experiments allows obtaining depth-dependent information used here to evidence (100)-O-terminated diamond surface atomic configuration when fabricated by acid treatment. The results were used to compare the chemistry changes occurring during the oxidation process using a sublayer XPS intensity model. The formation of non-diamond carbon phases at the subsurface and higher oxygen contents were shown to result from the oxygenation treatment. A new (100) 1 × 1:O surface reconstruction model is proposed to explain the XPS quantification results of O-terminated diamond.

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39

Sen, Fatih G., Yue Qi, and Ahmet T. Alpas. "Surface stability and electronic structure of hydrogen- and fluorine-terminated diamond surfaces: A first-principles investigation." Journal of Materials Research 24, no. 8 (August 2009): 2461–70. http://dx.doi.org/10.1557/jmr.2009.0309.

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The effect of fluorine termination on the stability and bonding structure of diamond (111) surfaces were studied using first-principles calculations and compared with hydrogen termination by creating mixed F- and H-containing diamond surfaces. Surface F atoms, similar to H, formed sp3-type bonding with C atoms, which resulted in a more stable 1 × 1 configuration. The surface phase diagram built showed that the F-terminated surface was more stable in a larger-phase space than H termination, because of the formation of strong ionic C–F bonds and the development of attractive forces between F atoms, resulting in close packing of large F atoms. Hence, the F-terminated diamond surface was more chemically inert. A large repulsive force was required to bring two F-terminated surfaces together, because of the negative charge on F atoms, resulting in reduced adhesion tendency between two F-terminated diamond surfaces compared with H-terminated surfaces.

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40

Ryu, J. T., K. Kui, K. Noda, M. Katayama, and K. Oura. "The effect of hydrogen termination on In growth on Si(100) surface." Surface Science 401, no. 3 (April 1998): L425—L431. http://dx.doi.org/10.1016/s0039-6028(98)00037-5.

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41

Ojima, Kaoru, Masamichi Yoshimura, and Kazuyuki Ueda. "Effect of Hydrogen Termination on Ba Reaction on the Si(100) Surface." Japanese Journal of Applied Physics 40, Part 1, No. 6B (June 30, 2001): 4384–87. http://dx.doi.org/10.1143/jjap.40.4384.

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42

Sieber, N., B. F. Mantel, Th Seyller, J. Ristein, L. Ley, T. Heller, D. R. Batchelor, and D. Schmeißer. "Electronic and chemical passivation of hexagonal 6H–SiC surfaces by hydrogen termination." Applied Physics Letters 78, no. 9 (February 26, 2001): 1216–18. http://dx.doi.org/10.1063/1.1351845.

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43

Fenner, D. B., D. K. Biegelsen, and R. D. Bringans. "Silicon surface passivation by hydrogen termination: A comparative study of preparation methods." Journal of Applied Physics 66, no. 1 (July 1989): 419–24. http://dx.doi.org/10.1063/1.343839.

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44

Chalov, S. "The Longitudinal Distribution of Anomalous Hydrogen near the Solar Wind Termination Shock." Advances in Space Research 13, no. 6 (June 1993): 293. http://dx.doi.org/10.1016/0273-1177(93)90424-a.

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45

Rezek, Bohuslav, Stepan Stehlik, Alexander Kromka, Jean-Charles Arnault, Martin Weis, and Jan Jakabovic. "Visible Light Photodiodes and Photovoltages from Detonation Nanodiamonds." MRS Advances 1, no. 14 (2016): 971–75. http://dx.doi.org/10.1557/adv.2016.115.

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ABSTRACTMacroscopic and microscopic photovoltage characteristics of detonation nanodiamonds (DNDs) with distinct surface terminations are presented. Organic photodiodes are fabricated based on P3HT+DNDs mixture (50 wt%). We compare effect of hydrogen and oxygen termination of DNDs. Compared to photodiodes without DNDs the current-voltage characteristics of photodiodes with O-DNDs in dark and under AM 1.5 illumination show reduced dark current, and higher photocurrent and open circuit voltage. H-DNDs shunt the photodiodes, which is attributed to their surface conductivity. Kelvin probe force microscopy detects a reproducible photovoltage of around 5 mV generated by a green laser (532 nm) on both types of pristine DNDs. Thus although conductivity of H-DNDs may represent a problem for photodiodes, both types of DNDs alone can function as miniature energy conversion devices.

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46

Zhang, Hao, Nan Pu Cheng, Zhi Qian Chen, and Qun Hui. "Hydrogen Storage Mechanism of Fe₃O₄: A First-Principles Study." Advanced Materials Research 936 (June 2014): 515–22. http://dx.doi.org/10.4028/www.scientific.net/amr.936.515.

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The adsorption and dissociative adsorption of a hydrogen molecule on Fetet1- terminated Fe3O4 (111) surfaces are investigated within the framework of density function theory. The surface Fetet1 atom site with the parallel mode of hydrogen molecule is found to be the most stable equilibrium adsorption state. The most possible dissociative adsorption pathway of a hydrogen molecule needs an energy barrier of 2.85 or 2.87 eV at the surface Oa or Oc atom site, and generates a water molecule, remarkably in agreement with Otsuka.K’s conclusion on the reaction condition and hydrogen storage mechanism of Fe3O4 from microscopic point of view. The calculation of the electronic properties of the termination states with the adsorption and dissociative adsorption of a hydrogen molecule shows strong interactions between atomic hydrogen and Fe3O4 (111) surface.

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47

Clark, Ian T., Masamichi Yoshimura, and Kazuyuki Ueda. "Palladium Thin-Films on Clean and Hydrogen-Terminated Si(110): The Effect of Hydrogen Termination on Metal Adsorption." Japanese Journal of Applied Physics 48, no. 8 (August 20, 2009): 08JB04. http://dx.doi.org/10.1143/jjap.48.08jb04.

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48

XU, JUN, XIAOHUI HUANG, WEI LI, LI WANG, KUNJI CHEN, JIANBIN XU, and I. H. WILSON. "VERY LOW THRESHOLD ELECTRON FIELD EMISSION FROM AMORPHOUS CARBON FILMS WITH HYDROGEN DILUTION." International Journal of Modern Physics B 16, no. 06n07 (March 20, 2002): 988–92. http://dx.doi.org/10.1142/s0217979202010737.

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Hydrogenated amorphous carbon films were fabricated with and without hydrogen dilution in a small d.c bias-assisted plasma chemical vapor deposition system. It was found that the hydrogen dilution can reduce the sp 2/ sp 3 ratio in carbon films which results in blue shift of room temperature photoluminescence spectrum. The field emission characteristics were investigated by using parallel plates test configuration. A very low threshold electric field (~0.5 V/μm) was achieved from thin amorphous carbon film prepared with hydrogen dilution. The improvement to field emission property in the present carbon films was tentatively attributed to the field enhancement effect due to the electronic structure inhomogeneity of the carbon films and the reduction of the surface emission barrier due to the hydrogen termination.

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Chen, Bonien, Tah-Wei Chu, Kuohsun Chiu, Ming-Chang Hong, Tsung-Meng Wu, Jui-Wen Ma, Chih-Ming Liang, and Wei-Kuang Wang. "Transcriptomic analysis elucidates the molecular processes associated with hydrogen peroxide-induced diapause termination in Artemia-encysted embryos." PLOS ONE 16, no. 2 (February 19, 2021): e0247160. http://dx.doi.org/10.1371/journal.pone.0247160.

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Treatment with hydrogen peroxide (H2O2) raises the hatching rate through the development and diapause termination ofArtemiacysts. To comprehend the upstream genetic regulation of diapause termination activated by exterior H2O2elements, an Illumina RNA-seq analysis was performed to recognize and assess comparative transcript amounts to explore the genetic regulation of H2O2in starting the diapause termination of cysts inArtemia salina. We examined three groupings treated with no H2O2(control), 180 μM H2O2(low) and 1800 μM H2O2(high). The results showed a total of 114,057 unigenes were identified, 41.22% of which were functionally annotated in at least one particular database. When compared to control group, 34 and 98 differentially expressed genes (DEGs) were upregulated in 180 μM and 1800 μM H2O2treatments, respectively. On the other hand, 162 and 30 DEGs were downregulated in the 180 μM and 1800 μM H2O2treatments, respectively. Cluster analysis of DEGs demonstrated significant patterns among these types of 3 groups. GO and KEGG enrichment analysis showed the DEGs involved in the regulation of blood coagulation (GO: 0030193; GO: 0050818), regulation of wound healing (GO:0061041), regulation of hemostasis (GO: 1900046), antigen processing and presentation (KO04612), the Hippo signaling pathway (KO04391), as well as the MAPK signaling pathway (KO04010). This research helped to define the diapause-related transcriptomes ofArtemiacysts using RNA-seq technology, which might fill up a gap in the prevailing body of knowledge.

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Li, Shuang, Ping Tuo, Junfeng Xie, Xiaodong Zhang, Jianguang Xu, Jian Bao, Bicai Pan, and Yi Xie. "Ultrathin MXene nanosheets with rich fluorine termination groups realizing efficient electrocatalytic hydrogen evolution." Nano Energy 47 (May 2018): 512–18. http://dx.doi.org/10.1016/j.nanoen.2018.03.022.

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