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Journal articles on the topic 'I-V curve'

Author: Grafiati

Published: 4 June 2021

Last updated: 14 March 2023

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1

Nagayoshi, H. "I–V curve simulation by multi-module simulator using I–V magnifier circuit." Solar Energy Materials and Solar Cells 82, no. 1-2 (May 1, 2004): 159–67. http://dx.doi.org/10.1016/j.solmat.2004.01.014.

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2

Noda, Kazuhiko, and Tomo Saito. "II. Fundamental Electrochemical Methods for Corrosion－Polarization Curve（i-V Curve）－." Zairyo-to-Kankyo 67, no. 1 (January 15, 2018): 9–16. http://dx.doi.org/10.3323/jcorr.67.9.

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3

Vélez-Sánchez, Jeisson, Juan Bastidas-Rodríguez, Carlos Ramos-Paja, Daniel González Montoya, and Luz Trejos-Grisales. "A Non-Invasive Procedure for Estimating the Exponential Model Parameters of Bypass Diodes in Photovoltaic Modules." Energies 12, no. 2 (January 18, 2019): 303. http://dx.doi.org/10.3390/en12020303.

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Bypass diodes (BDs) present in photovoltaic (PV) modules are represented by the exponential model, which requires two parameters: the inverse-saturation current ( I s a t , d b ) and the ideality factor ( η d b ). However, it is difficult to estimate those parameters since the terminals of the BDs are not isolated, hence there is only access to the series connection of the module BDs. This problem must be addressed since inaccurate BDs parameters could produce errors in the reproduction of the current-voltage (I-V) curves of commercial PV modules, which lead to wrong predictions of the power production. This paper proposes a non-invasive procedure to estimate I s a t , d b and η d b of the bypass diodes present in a PV module using two experimental I-V curves. One I-V curve is measured completely covering the submodule of the module whose BD will be parameterized; while the other I-V curve is measured without any shadow on the module. From those curves, the I-V curve of the BD is estimated and I s a t , d b and η d b are calculated by solving a system of two nonlinear equations. The proposed procedure is validated through simulations and experimental results considering a commercial PV module formed by three submodules, where the estimation errors in the reproduction of the BD I-V curve are less than 1% in the simulations and less than 10% in the experiments.

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4

Casado, P., J. M. Blanes, C. Torres, C. Orts, D. Marroquí, and A. Garrigós. "Raspberry Pi based photovoltaic I-V curve tracer." HardwareX 11 (April 2022): e00262. http://dx.doi.org/10.1016/j.ohx.2022.e00262.

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5

Aranda, Eladio, Juan Gomez Galan, Mariano de Cardona, and Jose Andujar Marquez. "Measuring the I-V curve of PV generators." IEEE Industrial Electronics Magazine 3, no. 3 (September 2009): 4–14. http://dx.doi.org/10.1109/mie.2009.933882.

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6

Casado, Pablo, José M. Blanes, Francisco Javier Aguilar Valero, Cristian Torres, Manuel Lucas Miralles, and Javier Ruiz Ramírez. "Photovoltaic Evaporative Chimney I–V Measurement System." Energies 14, no. 24 (December 7, 2021): 8198. http://dx.doi.org/10.3390/en14248198.

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The photovoltaic evaporative chimney is a novel solar-cooling system that serves a double purpose: it increases the efficiency of the photovoltaic (PV) panels and it cools down a water stream which can be used to dissipate the heat from a refrigeration cycle. One of the major issues arising from the operation of the chimney is the temperature stratification in the panel due to the movement of the air in the chimney. This effect can trigger the activation of the bypass diodes of the module, creating local maximum power points (MPP) that can compromise the grid-tied inverter tracking. To fill this gap, this paper deals with the design and implementation of an I–V curve measurement system to be used in the performance analysis of the system. The I–V curve tracer consists of a capacitive load controlled by a single board computer. The final design includes protections, capacitor charging/discharging power electronics, remote commands inputs, and current, voltage, irradiance, and temperature sensors.The results show that the modules bypass diodes are not activated during the tests, and no local MPPs appear. Moreover, the curves measured show the benefits of the photovoltaic chimney: the cooling effect increases the power generated by the PV panels by around 10%.

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7

Li, Jian-Quan, Xin-Yao Xie, Qing-He Zhang, Shu-Han Li, and Wen-Qi Lu. "Data processing of Langmuir probe I–V traces to obtain accurate electron temperature and density in Maxwellian plasmas." Physics of Fluids 34, no. 6 (June 2022): 067115. http://dx.doi.org/10.1063/5.0097089.

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The standard procedure for obtaining accurate electron temperature ([Formula: see text]) from Langmuir probe I– V characteristics measured in Maxwellian plasmas is studied by comparing the results of [Formula: see text] determined via different data-processing methods. The comparison results show that the width and position of the fitting interval in the transition region of the I– V curve as well as whether the ion collection current deducted from the I– V curve can significantly influence the calculation of [Formula: see text] and afford uncertainties in the calculation of electron density. The reasonable width of the linear fitting interval should be 30%–50% of the transition region width, and the results of [Formula: see text] are the most reliable, which are determined by the linear fitting intervals optimally selected from the electron part of I– V curves. Based on the results, a rigorous data-processing method is proposed to provide a standard procedure for obtaining reliable plasma parameters, especially accurate [Formula: see text] from Maxwellian plasmas using a Langmuir probe.

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8

González, Isaías, José María Portalo, and Antonio José Calderón. "Configurable IoT Open-Source Hardware and Software I-V Curve Tracer for Photovoltaic Generators." Sensors 21, no. 22 (November 18, 2021): 7650. http://dx.doi.org/10.3390/s21227650.

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Photovoltaic (PV) energy is a renewable energy resource which is being widely integrated in intelligent power grids, smart grids, and microgrids. To characterize and monitor the behavior of PV modules, current-voltage (I-V) curves are essential. In this regard, Internet of Things (IoT) technologies provide versatile and powerful tools, constituting a modern trend in the design of sensing and data acquisition systems for I-V curve tracing. This paper presents a novel I-V curve tracer based on IoT open-source hardware and software. Namely, a Raspberry Pi microcomputer composes the hardware level, whilst the applied software comprises mariaDB, Python, and Grafana. All the tasks required for curve tracing are automated: load sweep, data acquisition, data storage, communications, and real-time visualization. Modern and legacy communication protocols are handled for seamless data exchange with a programmable logic controller and a programmable load. The development of the system is expounded, and experimental results are reported to prove the suitability and validity of the proposal. In particular, I-V curve tracing of a monocrystalline PV generator under real operating conditions is successfully conducted.

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9

Zegrar, Mansour, M’hamed Houari Zerhouni, Mohamed Tarik Benmessaoud, and Fatima Zohra Zerhouni. "Design and implementation of an I-V curvetracer dedicated to characterize PV panels." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 3 (June 1, 2021): 2011. http://dx.doi.org/10.11591/ijece.v11i3.pp2011-2018.

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In recent years, solar photovoltaic energy is becoming very important in the generation of green electricity. Solar photovoltaic effect directly converts solar radiation into electricity. The output of the photovoltaic module MPV depends on several factors as solar irradiation and cell temperature. A curve tracer is a system used to acquire the PV current-voltage characteristics, in real time, in an eﬃcient manner. The shape of the I-V curve gives useful information about the possible anomalies of a PV device. This paper describes an experimental system developed to measure the current–voltage curve of a MPV under real conditions. The measurement is performed in an automated way. This present paper presents the design, and the construction of I-V simple curve tracer for photovoltaic modules. This device is important for photovoltaic (PV) performance assessment for the measurement, extraction, elaboration and diagnose of entire current-voltage I-V curves for several photovoltaic modules. This system permits to sweep the entire I-V curve, in short time, with different climatic and loads conditions. An experimental test bench is described. This tracer is simple and the experimental results present good performance. Simulation and experimental tests have been carried out. Experimental results presented good performance.

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10

Rekutov, O. G., V. M. Rulevskiy, A. G. Yudintsev, and А. М. Malyshenko. "Comparative analysis of I-V curve solar array simulator." Proceedings of Tomsk State University of Control Systems and Radioelectronics 22, no. 4 (2019): 89–95. http://dx.doi.org/10.21293/1818-0442-2019-22-4-89-95.

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11

Haji, Shaker. "Analytical modeling of PEM fuel cell i–V curve." Renewable Energy 36, no. 2 (February 2011): 451–58. http://dx.doi.org/10.1016/j.renene.2010.07.007.

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12

Saetre, Tor Oskar, Ole-Morten Midtgård, and Georgi Hristov Yordanov. "A new analytical solar cell I–V curve model." Renewable Energy 36, no. 8 (August 2011): 2171–76. http://dx.doi.org/10.1016/j.renene.2011.01.012.

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13

Ušák, P., L' Janšák, and M. Polák. "Hysteresis of V–I curve of BSCCO-2223 tape." Physica C: Superconductivity 350, no. 1-2 (February 2001): 139–46. http://dx.doi.org/10.1016/s0921-4534(00)01575-6.

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14

Ding, S. Y., Y. Liu, Z. H. Wang, and H. M. Luo. "Study of V–I curve of Tl-2212 film." Physica C: Superconductivity and its Applications 364-365 (November 2001): 504–6. http://dx.doi.org/10.1016/s0921-4534(01)00836-x.

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15

Li, L. X., R. P. Liu, C. Z. Fan, M. Y. Lv, J. Li, and W. K. Wang. "I–V curve oscillation observed by atomic force microscopy." Applied Surface Science 252, no. 16 (June 2006): 5803–7. http://dx.doi.org/10.1016/j.apsusc.2005.07.049.

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16

Morales-Aragonés, José Ignacio, Víctor Alonso Gómez, Sara Gallardo-Saavedra, Alberto Redondo-Plaza, Diego Fernández-Martínez, and Luis Hernández-Callejo. "Low-Cost Three-Quadrant Single Solar Cell I-V Tracer." Applied Sciences 12, no. 13 (June 30, 2022): 6623. http://dx.doi.org/10.3390/app12136623.

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An I-V curve measurement technique is one of the most important techniques available for characterising photovoltaic cells. Measuring an accurate I-V curve at the single-cell level is a challenging task because of the low voltages and high currents implied, requiring the management of very low impedances. In this paper, the authors propose a low-cost device for I-V curve measurements of single (or small amounts) of cells in a series based on the charge transfer between two capacitors of equal capacitance. Our measurement strategy allows us to trace the usual first quadrant curve (the normal working region of solar cells) as well as the second and fourth quadrants of the I-V curve, which are quite important for research purposes. A prototype was built to demonstrate the feasibility and successful measurements of the three-quadrant I-V curve, obtained for more than 20 different cells. To use the device in a laboratory, without depending on the solar irradiation, a modular platform was 3D-printed, integrating a board with infrared LEDs as irradiating devices, and housing (to place the solar cell under test). The result is a useful low-cost setup for three-quadrant I-V curve tracing that works as expected.

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17

Morales-Aragonés, José Ignacio, Miguel Dávila-Sacoto, Luis G. González, Víctor Alonso-Gómez, Sara Gallardo-Saavedra, and Luis Hernández-Callejo. "A Review of I–V Tracers for Photovoltaic Modules: Topologies and Challenges." Electronics 10, no. 11 (May 27, 2021): 1283. http://dx.doi.org/10.3390/electronics10111283.

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Current–voltage (I–V) curve tracers are used for measuring voltage and current in photovoltaic (PV) modules. I–V curves allow identifying certain faults in the photovoltaic module, as well as quantifying the power performance of the device. I–V curve tracers are present in different topologies and configurations, by means of rheostats, capacitive loads, electronic loads, transistors, or by means of DC–DC converters. This article focuses on presenting all these configurations. The paper shows the electrical parameters to which the electronic elements of the equipment are exposed using LTSpice, facilitating the appropriate topology selection. Additionally, a comparison has been included between the different I–V tracers’ topologies, analyzing their advantages and disadvantages, considering different factors such as their flexibility, modularity, cost, precision, speed or rating, as well as the characteristics of the different DC–DC converters.

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18

Badel, Laurent, Sandrine Lefort, Romain Brette, Carl C. H. Petersen, Wulfram Gerstner, and Magnus J. E. Richardson. "Dynamic I-V Curves Are Reliable Predictors of Naturalistic Pyramidal-Neuron Voltage Traces." Journal of Neurophysiology 99, no. 2 (February 2008): 656–66. http://dx.doi.org/10.1152/jn.01107.2007.

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Neuronal response properties are typically probed by intracellular measurements of current-voltage ( I-V) relationships during application of current or voltage steps. Here we demonstrate the measurement of a novel I-V curve measured while the neuron exhibits a fluctuating voltage and emits spikes. This dynamic I-V curve requires only a few tens of seconds of experimental time and so lends itself readily to the rapid classification of cell type, quantification of heterogeneities in cell populations, and generation of reduced analytical models. We apply this technique to layer-5 pyramidal cells and show that their dynamic I-V curve comprises linear and exponential components, providing experimental evidence for a recently proposed theoretical model. The approach also allows us to determine the change of neuronal response properties after a spike, millisecond by millisecond, so that postspike refractoriness of pyramidal cells can be quantified. Observations of I-V curves during and in absence of refractoriness are cast into a model that is used to predict both the subthreshold response and spiking activity of the neuron to novel stimuli. The predictions of the resulting model are in excellent agreement with experimental data and close to the intrinsic neuronal reproducibility to repeated stimuli.

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19

Galiana, Beatriz, Carlos Algora, and Ignacio Rey‐Stolle. "Explanation for the dark I–V curve of III–V concentrator solar cells." Progress in Photovoltaics: Research and Applications 16, no. 4 (June 2008): 331–38. http://dx.doi.org/10.1002/pip.805.

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20

Botero Londoño, Mónica Andrea, Hermann Raul Vargas Torres, and Clara Lilia Calderón Triana. "PRODUCTION OF SOLAR CELLS AND ESTIMATION OF ITS ELECTRICAL PARAMETERS FROM ITS EXPERIMENTAL CHARACTERIZATION." Revista Ingenierías Universidad de Medellín 21, no. 40 (September 22, 2021): 15–27. http://dx.doi.org/10.22395/rium.v21n40a2.

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In this work, solar cells with Mo/CuInSe2/CdS/n+–ZnO structure were deposited and experimentally characterized by the I-V curve. From these results, the electrical parameters were estimated fitting, theoretically, the curve to determine the most important variables. The estimation was carriedout using the single and double diode models and comparing the curve that best fits. The estimated variables were photogenerated current (Iph), dark current of the diode (Is), series resistance (Rs), shunt resistance (Rp) and diode ideality factors (a1 and a2) according to each model of circuit taken for optimization. The adjustment of the current-voltage (I-V) and power-voltage (P-V) curves achieved with the double diodemodel indicates that in the manufactured solar cells, interfacial states are present in the p-n junction, which decreases the efficiency of the device.

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21

Salinas, C., and Yuan Jun Zhou. "A Solar Array Simulator Using a Buck Configuration for Small Communications Satellites." Advanced Materials Research 383-390 (November 2011): 3438–42. http://dx.doi.org/10.4028/www.scientific.net/amr.383-390.3438.

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The purpose of this paper is to describe a solar array simulator to reproduce the I-V curve characteristics of solar panel modules using software. The simulator takes the storage data of I-V curves to use it as reference control to match the actual output of buck circuit with the selected module under test.

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22

Eum, Ji-Young, Yong-Ki Kim, and Soo-Hwan Cho. "PV Module Failure Type Classification Method based on I-V Curve." Journal of the Korean Institute of Illuminating and Electrical Installation Engineers 34, no. 10 (October 31, 2020): 24–35. http://dx.doi.org/10.5207/jieie.2020.34.10.024.

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23

Jin, Xin, and Hai Wang. "Space Charge Limited Current and Magnetoresistance in Si." Advanced Materials Research 750-752 (August 2013): 952–55. http://dx.doi.org/10.4028/www.scientific.net/amr.750-752.952.

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Mott and Gurney point out1, for defect-free semiconductors, I-V curve deviates from linear Ohmic type to nonlinear space-charge limited behavior at high electric field. A surprising large magnetoresistance (MR) has been reported in space-charge limited region by Delmo2-4recently. In present work, I-V and MR curves of silicon samples with different doping concentration are measured. It is observed that I-V curve enters into space charge region at lower voltage in heavily doped samples, however, space-charge limited current is absent in lightly doped samples. Two samples show different types of MR curve. In heavily doped samples, 8% MR is acquired at 3kG and the value of MR increases linearly up to 17%, while MR increases slowly up to 11% in lightly doped samples. It is believed that the dopant and trap in N-type silicon has a strong influence on the space-charge limited current and MR.

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24

Martins d'Oliveira, Li�gia, Valeriya Kilchytska, Denis Flandre, and Michelly De Souza. "Self-Cascode Current-Voltage Curve-Construction Algorithm from Single MOSFET Measurements for Analog Figures-of-Merit Extraction." Journal of Integrated Circuits and Systems 14, no. 1 (April 29, 2019): 1–6. http://dx.doi.org/10.29292/jics.v14i1.69.

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This paper proposes a curve extraction method for I-V curves and analog figures-of-merit of self-cascode MOSFET associations (SC) using a code that exploits I-V curves of single transistors as input. The method was validated by using experimental measurements of fabricated SC and the very single transistors that compose them. The results indicate a very low error between the SC generated by the code and the measured reference for operation in saturation regime and above threshold voltage, for both the I-V curves and their derivatives. This method is then valid for the assessment of the SC structures in new technologies, avoiding experimental dedicated layouts or complex set-ups.

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25

Haditale, M., R. S. Dariani, and E. Ghasemian Lemraski. "Electrical behavior of graphene under temperature effect and survey of I–T curve." Journal of Theoretical and Applied Physics 13, no. 4 (October 14, 2019): 351–56. http://dx.doi.org/10.1007/s40094-019-00349-1.

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Abstract Graphene flakes were made from electrochemical exfoliation. To study graphene planes, different volumes of graphene solutions (1, 2, 4, and 7 ml) were sprayed on glass lamellae to get different graphene planes. I–V curve of all samples shows ohmic behavior with resistance in the order of kΩ which increases the slope of the I–V curve with increasing graphene planes (spray volume). The effect of temperature on all samples shows a clear jump in I–T curves. It is found that up to 150 °C current is almost constant, but after that current increases highly in the range of 1.8–10 times and resistance reduces sharply. Also, samples with lower graphene planes affected highly with temperature effect.

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26

HU, Keman, Haiyan HU, and Guiguo LIU. "Optimization algorithm for I-V curve fitting of solar cell." Journal of Computer Applications 33, no. 5 (October 14, 2013): 1481–84. http://dx.doi.org/10.3724/sp.j.1087.2013.01481.

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27

Abodunrin, T. J., M. E. Emetere, N. O. Obafemi, and O. F. Oyetade. "Metaheuristic conformal solutions for organic photovoltaic I–V curve tracers." Physics Open 9 (November 2021): 100087. http://dx.doi.org/10.1016/j.physo.2021.100087.

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28

Iga, Atsushi. "Solar Irradiance Meter using Practical I-V Curve Construction Method." IEEJ Transactions on Industry Applications 117, no. 10 (1997): 1187–96. http://dx.doi.org/10.1541/ieejias.117.1187.

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29

Aguilar, Horacio Munguía, and Kassim José Mendoza Peña. "Low cost automatic I–V curve generator for solar cells." Physics Education 54, no. 5 (July 25, 2019): 055026. http://dx.doi.org/10.1088/1361-6552/ab2568.

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30

Gasparin, Fabiano Perin, Alexandre José Bühler, Giuliano Arns Rampinelli, and Arno Krenzinger. "Statistical analysis of I–V curve parameters from photovoltaic modules." Solar Energy 131 (June 2016): 30–38. http://dx.doi.org/10.1016/j.solener.2016.01.061.

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31

Keogh, W. "Constant voltage I–V curve flash tester for solar cells." Solar Energy Materials and Solar Cells 81, no. 2 (February 6, 2004): 183–96. http://dx.doi.org/10.1016/j.solmat.2003.11.001.

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32

Ibragimov, M. A., and V. S. Shevchenko. "Observations of fuors. I. Light curve of V 1057 CYG." Astrophysics 27, no. 1 (1988): 337–45. http://dx.doi.org/10.1007/bf01008190.

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33

XU, X. B., L. ZHANG, X. LENG, S. Y. DING, and Z. H. WANG. "EFFECTS OF MAGNETIC FIELD ON THE HYSTERESIS V-I CURVE." International Journal of Modern Physics B 19, no. 01n03 (January 30, 2005): 271–73. http://dx.doi.org/10.1142/s0217979205028396.

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Hysteresis V-I curves were simulated based on flux creep model. The clockwise loop was found for a sample with homogenous flux pinning if a fast current sweeping rate is used. Moreover, it is shown that an applied magnetic field can suppress the loop. The results coincide qualitatively with the relevant measurements.

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34

Nasikkar, Paresh S., and Javed K. Sayyad. "Internet of Things (IoT) based outdoor performance characterisation of solar photovoltaic module." E3S Web of Conferences 170 (2020): 02009. http://dx.doi.org/10.1051/e3sconf/202017002009.

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Outdoor performance characterisation of the Solar Photovoltaic (SPV) module is essential to while designing and commissioning a new SPV power plant. The health of SPV plant is monitored using a conventional method which underutilises the workforce and resources used for Operation and Maintenance (O&M) of the SPV power plant. Outdoor performance characterisation of SPV module using reliable, compact, portable, and economical Current-Voltage (I-V) curve tracer having IoT capability and auto sweep capability is presented in this paper. The capacitive load method is used for I-V curve sweep, and the result is compared with the resistive load method. In this paper, the advantages of using a capacitive load method over resistive load method are observed and experimentally validated. The ease of using IoT feature makes this proposed I-V Curve Tracer (IVCT) device more reliable to trace Current-Voltage (I-V) curve and Power-Voltage (P-V) curve for outdoor performance characterisation of SPV module.

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35

Li, Jian-quan, Qing-he Zhang, Zan-yang Xing, and Wen-qi Lu. "Comparative studies of cold/hot probe techniques for accurate plasma measurements." Journal of Vacuum Science & Technology A 40, no. 3 (May 2022): 033001. http://dx.doi.org/10.1116/6.0001461.

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The emissive probe technique and the cold Langmuir probe technique for the plasma potential measurement are compared in microwave electron cyclotron resonance plasmas. With different results of plasma potential, discrepant results of electron temperature and electron density are obtained from a hot emissive probe I–V curve and a cold Langmuir probe I–V curve, respectively. A comparison of the experimental data shows that the plasma parameters obtained from the cold Langmuir probe I–V curve are always grossly underestimated, while the results determined from the hot emissive probe I–V curve are much more reliable. Additionally, based on the experimental results, a novel emissive probe technique named the hot probe with zero emission limit method is proposed to easily obtain the accurate plasma potential and other reliable plasma parameters.

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36

HIRATA, Youichi, Takumi AOKI, Keigo NAKASHIMA, and Satoru MIYAZAWA. "Reliability Evaluation of Failure Diagnosis for I-V Curve Obtained by Advanced Technique." Journal of the Japan Institute of Energy 95, no. 5 (2016): 441–47. http://dx.doi.org/10.3775/jie.95.441.

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37

Kongphet, Vorachack, Anne Migan-Dubois, Claude Delpha, Jean-Yves Lechenadec, and Demba Diallo. "Low-Cost I–V Tracer for PV Fault Diagnosis Using Single-Diode Model Parameters and I–V Curve Characteristics." Energies 15, no. 15 (July 23, 2022): 5350. http://dx.doi.org/10.3390/en15155350.

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The continuous health monitoring of PV modules is mandatory to maintain their high efficiency and minimize power losses due to faults or failures. In this work, a low-cost embedded tracer is developed to measure the I–V curve of a PV module in less than 0.2 s. The data are used to extract the five parameters of the single-diode model and its main characteristics (open-circuit voltage, short-circuit current, and maximum power). Experimental data are used to validate the analytical model and evaluate the two fault diagnosis methods, using as fault features the parameters of the single-diode model or the main characteristics of the I–V curve. The results, based on field data under different temperatures and irradiances, show that the degradation of series and shunt resistances could be detected more accurately with the main characteristics rather than with the parameters. However, the estimated parameters could still be used to monitor the long-term degradation effects.

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38

Seo, J. K., and S. H. Kim. "LEED I/V Curve Analysis of O/Fe(100) and MgO/Fe(100) System." Journal of the Korean Vacuum Society 16, no. 1 (January 31, 2007): 1–6. http://dx.doi.org/10.5757/jkvs.2007.16.1.001.

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39

Shafi, Muhammad Aamir, Muneeb Khan, Sumayya Bibi, Muhammad Yasir Shafi, Noreena Rabbani, Hanif Ullah, Laiq Khan, and Bernabe Mari. "Effect of Parasitic Parameters and Environmental Conditions on I-V and P-V Characteristics of 1D5P Model Solar PV Cell Using LTSPICE-IV." 2, no. 2 (June 2, 2022): 64–74. http://dx.doi.org/10.26565/2312-4334-2022-2-07.

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In this research work, the electrical simulation of 1D5P model solar cell is done using LTSpice-IV simulation software. In this work effect of environmental conditions i.e temperature, solar irradiance, and parasitic parameters i.e series as well as shunt resistances was carried out. It has been discovered that as temperature increases the performance of solar cell decrease because temperature causes to increase the recombination phenomenon and hence lower the performance. However, when the temperature rises from 00C to 500C, the I-V and P-V curves move to the origin showing the negative effect of increasing temperature on the solar cell. Solar irradiance has major role on the performance of solar cell. As solar irradiance increases from 250 Wm-2 to 1000 Wm-2, the performance of solar cell increases accordingly and I-V as well as P-V curve moves away from the origin. It is concluded that for different series resistances, I-V along with P-V characteristic of 1D5P model solar cell varies, as at 0.02Ω series resistance, a maximum short circuit current and maximum power is obtained. But when series resistance increased up 2 ohm only, the I-V and P-V curves moves to origin drastically. Shunt Resistance is the path of reverse current of the cell. As the shunt resistance increases, the path for reverse current decreased, hence all current goes to load, hence maximum power is obtained. Similarly when the value of shunt resistance decreased, the voltage-controlled section of I-V characteristics curve is moved closer to the origin hence reduced the solar cell performance. It's critical to understand how different factors affect the I-V and P-V characteristics curves of solar cells. The open circuit voltage, short circuit current and maximum power is all variable. The influence of these factors may be extremely beneficial when tracking highest power point of a solar cell applying various methods.

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Chi, H. B., M. F. N. Tajuddin, N. H. Ghazali, A. Azmi, and M. U. Maaz. "Internet of things (IoT) based I-V curve tracer for photovoltaic monitoring systems." Indonesian Journal of Electrical Engineering and Computer Science 13, no. 3 (March 1, 2019): 1022. http://dx.doi.org/10.11591/ijeecs.v13.i3.pp1022-1030.

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<span>This paper presents a low-cost PV current-voltage or <em>I-V</em> curve tracer that has the Internet of Things (IoT) capability. Single ended primary inductance converter (SEPIC) is used to develop the <em>I-V</em> tracer, which is able to cope with rapidly changing irradiation conditions. The <em>I-V</em> tracer control software also has the ability to automatically adapt to the varying irradiation conditions. The performance of the <em>I-V</em> curve tracer is evaluated and verified using simulation and experimental tests.</span>

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Grigoriev, N. D. "«FAUST CURVE WITHOUT MEPHISTOPHELES IMPURITIES»." World of Transport and Transportation 14, no. 1 (February 28, 2016): 246–55. http://dx.doi.org/10.30932/1992-3252-2016-14-1-26.

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[For the English abstract and full text of the article please see the attached PDF-File (English version follows Russian version)].ABSTRACT Being a man of encyclopedic knowledge, a brilliant theoretician and experimenter, academician Sergey Vavilov has received international recognition for his work in the field of luminescence («cold light»), physical optics, became a founder of a branch of science, called microoptics. In the arsenal of his developments there are rangefinders and stereo telescopes, means of aerial photography and optical control, masking of warships and lighting of submarines, he headed for many years at the same time State Optical Institute and Physical Institute of the USSR Academy of Sciences. The last six years of life he headed the USSR Academy of Sciences, played a huge role in post-war reform of Soviet science. The article is devoted to the 125th anniversary of the birth of the scientist, organizer and popularizer of science and public figure. Keywords: physics, optics, Sergey Vavilov, luminescence, science, history, academy. REFERENCES 1. Sergey Vavilov. Essays and Memoirs [Sergej Ivanovich Vavilov. Ocherki i vospominanija]. Ed. by I. M. Frank. Moscow, Nauka publ., 1979, 245 p. 2. Keler, V. R. Sergey Vavilov. 2nd ed. Moscow, Molodaya Gvardiya publ., 1975, 320 p. 3. Levshin, L. V. S. I. Vavilov. Moscow, Publishing House of the USSR Academy of Sciences, 1952, 252 p. 4. In memory of Sergey Vavilov. Collection of articles [Pamjati Sergeja Ivanovicha Vavilova. Sbornik statej]. Moscow, Publishing House of the USSR Academy of Sciences, 1952, 252 p. 5. Nesmeyanov, A. N. S. I. Vavilov - an outstanding scientist and organizer of science [S. I. Vavilov - vydajushhijsja uchenyj i organizator nauki]. Uspehi fizicheskih nauk, 1961, Vol. 75, Iss. 2, pp. 205-213. 6. Election of academician S. I. Vavilov as president of the Academy of Sciences of the USSR [Izbranie akademika S. I. Vavilova na post prezidenta Akademii nauk SSSR]. Vestnik AN SSSR, 1945, Iss. 7-8, pp. 22-26. 7. Vavilov, S. I. Our plans, our prospects [Nashi plany, nashi perspektivy]. Vestnik AN SSSR, 1946, Iss. 3, pp. 9-11. 8. Vavilov, S. I. Petr Lebedev. People of Russian Science: Essays on prominent figures of science and technology. Vol. 1, Moscow-Leningrad, 1948, pp. 241-249. 9. Vavilov, S. I. Mikhail Lomonosov (1711-1765). People of Russian Science: Essays on prominent figures of science and technology. Vol. 1, Moscow-Leningrad, 1948, pp. 63-82. 10. Vavilov, S. I. In memory of academician P. P. Lazarev [Pamjati akademika P. P. Lazareva]. Vestnik AN SSSR, 1942, Iss. № 7-8, pp. 97-102. 11. Vavilov, S. I. Galileo in the history of optics [Galilej v istorii optiki]. Galileo Galilei. 1564-1642: The collection, dedicated to the 300 th anniversary of the death of Galileo. Moscow-Leningrad, 1943, pp. 5-56. 12. Veselovsky, O. N., Shneiberg, Ya. A. Essays on the history of electrical engineering [Ocherki po istorii elektrotehniki]. Moscow, Izd-vo MEI, 1993, 252 p.

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Ram Kumar, P. V., Aman Khurana, and R. S. Mishra. "Behaviour of PV cell with variation in parameters." INTERNATIONAL JOURNAL OF ADVANCED PRODUCTION AND INDUSTRIAL ENGINEERING 3, no. 1 (January 25, 2018): 11–13. http://dx.doi.org/10.35121/ijapie201801123.

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First electrical behavior i.e. short circuit current and open-circuit voltage is observed. The effect of different parameters on the I-V and P-V curve is studied considering uniform illumination. These parameters are insolation level, temperature, series resistance, shunt resistance, diode reverse saturation current. A variation on I-V and P-V curves are different with each parameter. With some parameters, the effect is significant while for others the effect is not so significant. For the parameters whose effect is not so significant large variation of inputs is taken for showing the effect. Simulation work is done in MATLAB

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Zhu, Y., and W. Xiao. "A comprehensive review of topologies for photovoltaic I–V curve tracer." Solar Energy 196 (January 2020): 346–57. http://dx.doi.org/10.1016/j.solener.2019.12.020.

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ZHAO, PEIJI, H. L. CUI, D. L. WOOLARD, K. L. JENSEN, and F. A. BUOT. "ORIGIN OF HYSTERESIS AND PLATEAU-LIKE BEHAVIOR OF THE I-V CHARACTERISTICS OF RESONANT TUNNELING DIODES." International Journal of Modern Physics B 14, no. 04 (February 10, 2000): 411–26. http://dx.doi.org/10.1142/s021797920000039x.

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In terms of numerical calculation of the coupled Wigner function–Poisson equations, the explanation to the origin of hysteresis and plateau-like behavior of the I-V characteristics of double barrier resonant tunneling devices is put forth. Several basic physical factors play key roles in the process of electron tunneling. Among these the most important factors are the interference of the injected and the reflected electron waves which leads to the formation of an emitter quantum well, the coupling between the energy level in the main quantum well and that in the emitter quantum well, and the coupling between the energy level in the main quantum well and the conduction b and edge or the three-dimensional states in the emitter. The interplay of these factors determines the form of the I-V curve of the resonant tunneling structure. The coupling between the energy levels in the emitter quantum-well and the main quantum-well leads to the plateau behavior of the I-V curves. The strength of the coupling determines the average slope of the plateau-like region in the I-V curve. The bias domain that the coupling exists determines the length of the plateau-like structure in the I-V curve. The domain can be controlled by adjusting the width of the barriers. The hysteresis is shown to be a manifestation of the above-mentioned energy level coupling, the coupling between the energy level in the main quantum well and the conduction b and edge or the three-dimensional states in the emitter, and the quantitative accumulation and distribution of electrons in the emitter region. This work provides new insight for underst and ing the nonlinear I-V behavior and establishes a foundation for the future analysis of bistability and oscillation behavior in resonant tunneling structures.

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Montalvo-Galicia, Fredy, María Teresa Sanz-Pascual, Pedro Rosales-Quintero, and Mario Moreno-Moreno. "Solar Cell Parameter Extraction Method from Illumination and Dark I-V Characteristics." Nanomaterials 12, no. 12 (June 7, 2022): 1955. http://dx.doi.org/10.3390/nano12121955.

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A novel method to extract the seven parameters of the double-diode model of solar cells using the current–voltage (I-V) characteristics under illumination and in the dark is presented. The algorithm consists of two subroutines which are alternatively run to adjust all the parameters of the cell in an iterative process. Curve fitting of the light I-V characteristics ensures accuracy in the prediction of the maximum power point, whereas simultaneously fitting the dark I-V characteristics results in a set of physically meaningful parameters that provide information about the physical performance of the photovoltaic devices. Experimental I-V curves of in-house solar cells are used to validate the proposed parameter extraction method, which can be furthermore applied to other types of p–n junction-based photovoltaic devices.

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O'Donnell, C. R., R. G. Castile, and J. Mead. "Changes in flow-volume curve configuration with bronchoconstriction and bronchodilation." Journal of Applied Physiology 61, no. 6 (December 1, 1986): 2243–51. http://dx.doi.org/10.1152/jappl.1986.61.6.2243.

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Changes in the configuration of maximum expiratory flow-volume (MEFV) curves following mild degrees of bronchodilation or bronchoconstriction were studied in five normal and five asthmatic subjects. In a volume-displacement plethysmograph, MEFV curves were performed before and after inhalation of aerosolized isoproterenol (I) or histamine (H). Five filtered MEFV curves were averaged, and slope ratio vs. volume (SR-V) plots were obtained from averaged curves. Following I, maximal flows at 75% of the vital capacity (VC) were decreased in asthmatics but not in normal subjects. Flows at 50 and 25% of the VC increased in normal subjects and asthmatics, whereas VC′s were unchanged. In asthmatics, sudden large decreases in flow (bumps) occurred at lower lung volumes following I. H reduced flows over the entire VC, with greater reductions occurring in asthmatics than in normals, particularly at low lung volumes. In asthmatics, VC was slightly reduced, and bumps in MEFV curve configuration occurred at higher lung volumes or were abolished entirely following H. A reduction in the amount of configurational detail appreciable in MEFV curves following histamine in asthmatics was best seen in SR-V plots. Following H, SR′s decreased regularly with decreasing lung volume in all the asthmatics but in none of the normals. This was the single most striking finding of this study. Mild I- and H-induced perturbations of airway bronchomotor tone produced small but consistent changes in MEFV curve configuration.(ABSTRACT TRUNCATED AT 250 WORDS)

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Binyamin, Muhammad Ahsan, Junaid Alam Khan, Faira Kanwal Janjua, and Naveed Hussain. "Characterization of stably simple curve singularities." Studia Scientiarum Mathematicarum Hungarica 53, no. 3 (September 2016): 314–21. http://dx.doi.org/10.1556/012.2016.53.3.1340.

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In this article we characterize the classification of stably simple curve singularities given by V. I. Arnold, in terms of invariants. On the basis of this characterization we describe an implementation of a classifier for stably simple curve singularities in the computer algebra system SINGULAR.

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YANG, BIN, JIE ZHANG, YONG-FANG ZHAO, and XIAO-GONG JING. "THE THEORETICAL RESEARCH ON I-V CURVE IN MULTI-QUANTUM WELLS OF SEMICONDUCTORS." International Journal of Modern Physics C 17, no. 04 (April 2006): 561–70. http://dx.doi.org/10.1142/s0129183106008686.

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The I-V curves in multi-quantum wells of different semiconductors are studied theoretically using the formalism of the transmission coefficient directly derived from Schrödinger equation. Al0.5Ga0.5As/GaAs double-barrier quantum well, Al0.29Ga0.71As/GaAs multi-quantum well, and AlSb/InAs double-barrier structure are calculated. The influences of well width, barrier width, temperature, Fermi energy on I-V characteristic curves are discussed in detail. Calculated results show that obvious negative differential resistance effects presented by our simulated I-V curves has a good agreement with previous experiments. Therefore, it can be a theoretical expectation to design experimentally high-quality semiconductor devices.

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Ovsyannikov, G. A., P. V. Komissinski, Yu V. Kislinski, and Z. G. Ivanov. "Superconducting Current-Phase Relation and Andreev Bound States in Nb/Au/YBa2Cu3Ox Josephson Heterojunctions." Modern Physics Letters B 17, no. 10n12 (May 20, 2003): 569–78. http://dx.doi.org/10.1142/s0217984903005597.

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Nb / Au / YBa 2 Cu 3 O x heterojunctions in (001) and (1 1 20)-oriented YBa 2 Cu 3 O x films have been fabricated. I-V curves of both kinds of heterojunctions show pronounced superconducting current. As affected by microwave radiation Shapiro steps at voltages hf/ 4e arise in the I-V curves of Nb / Au / YBa 2 Cu 3 O x (001) heterojunctions implying the double periodic (~ sin 2φ) superconducting current-phase relation. However, in the case of Nb / Au / YBa 2 Cu 3 O x (1 1 20) heterojunctions Shapiro steps have been observed in the I-V curves at voltages hf/ 2e only supporting a sinusoidal (~ sin φ) superconducting current-phase relation within measurement accuracy. A zero bias conductance peak associated with zero-energy Andreev bound states occurs in the I-V curve of the Nb / Au / YBa 2 Cu 3 O x (1 1 20) heterojunctions. We discuss the experimental results in terms of the d-wave symmetrical superconducting order parameter in YBCO.

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Krishnan, Shashikumar, and Vijayakumar Vengadasalam. "Detecting industrial motor faults with current signatures." F1000Research 10 (September 8, 2021): 903. http://dx.doi.org/10.12688/f1000research.54266.1.

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Background: A major player in industry is the induction motor. The constant motion and mechanical nature of motors causes much wear and tear, creating a need for frequent maintenance such as changing contact brushes. Unmannered and infrequent monitoring of motors, as is common in the industry, can lead to overexertion and cause major faults. If a motor fault is detected earlier through the use of automated fault monitoring, it could prevent minor faults from developing into major faults, reducing the cost and down-time of production due the motor repairs. There are few available methods to detect three-phase motor faults. One method is to analyze average vibration signals values of V, I, pf, P, Q, S, THD and frequency. Others are to analyze instantaneous signal signatures of V and I frequencies, or V and I trajectory plotting a Lissajous curve. These methods need at least three sensors for current and three for voltage for a three-phase motor detection. Methods: Our proposed method of monitoring faults in three-phase industrial motors uses Hilbert Transform (HT) instantaneous current signature curve only, reducing the number of sensors required. Our system detects fault signatures accurately at any voltage or current levels, whether it is delta or star connected motors. This is due to our system design, which incorporates normalized curves of HT in the fault analysis database. We have conducted this experiment in our campus laboratory for two different three-phase motors with four different fault experiments. Results: The results shown in this paper are a comparison of two methods, the V and I Lissajous trajectory curve and our HT instantaneous current signature curve. Conclusion: We have chosen them as our benchmark as their fault results closely resemble our system results, but our system benefits such as universality and a cost reduction in sensors of 50%.

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