Relevant bibliographies by topics / Id-Vg characteristic

Contents

  1. Journal articles
  2. Book chapters
  3. Conference papers

Academic literature on the topic 'Id-Vg characteristic'

Author: Grafiati
Published: 4 June 2025
Last updated: 1 August 2025

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Id-Vg characteristic.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Id-Vg characteristic"

1

Fadliondi, Kunta Biddinika Muhammad, and Ohmi Shun-ichiro. "The Humidity Dependence of Pentacene Organic MetalOxide-Semiconductor Field-Effect Transistor." TELKOMNIKA Telecommunication, Computing, Electronics and Control 15, no. 2 (2017): 578–83. https://doi.org/10.12928/TELKOMNIKA.v15i2.5834.

Full text
Abstract:
Metal-oxide-semiconductor field-effect transistors (MOSFET) were fabricated using organic semiconductor pentacene. The humidity dependence of drain current gate voltage (ID-VG) characteristic and drain current drain voltage characteristic (ID-VD) will be explained. Firstly, the thermal oxidation method was used to grow SiO2 gate insulator with thickness of 11 nm. Secondly, the thermal evaporation method was used to form Au source and drain electrodes with thickness of 28 nm. The channel width and length of the transistors were 500 and 200 respectively. By the same method, organic semiconductor
APA, Harvard, Vancouver, ISO, and other styles
2

Kondo, Jun, Murali Lingalugari, Pik-Yiu Chan, Evan Heller, and Faquir Jain. "Modeling and Fabrication of Quantum Dot Channel Field Effect Transistors Incorporating Quantum Dot Gate." MRS Proceedings 1551 (2013): 149–54. http://dx.doi.org/10.1557/opl.2013.899.

Full text
Abstract:
ABSTRACTQuantum dot gate (QDG) field-effect transistors (FET) have shown three-state transfer characteristics. Quantum dot channel (QDC) field-effect transistors (FET) have exhibited fourstate ID-VG characteristics. This project aims at studying the effect of incorporating cladded quantum dot layers in the gate region of QDC-FET. Four-state characteristics are explained by carrier transport in narrow energy mini-bands which are manifested in a quantum dot superlattice (QDSL) channel. QDSL is formed by an array of cladded quantum dots (such as SiOx-Si and GeOx-Ge). Multi-state FETs are needed i
APA, Harvard, Vancouver, ISO, and other styles
3

Cao, Zhong, Zhong Liang Xiao, Yun Lin Dai, Masao Kamahori, and Maki Shimoda. "Electrical Characteristics of Extended Gate FET Sensing Chip Constructed for Detection of DNA." Advanced Materials Research 97-101 (March 2010): 4189–92. http://dx.doi.org/10.4028/www.scientific.net/amr.97-101.4189.

Full text
Abstract:
An extended gate field effect transistor (EGFET) sensing chip has been constructed by using one gold plate electrode for molecule recognition and FET part for signal transduction. By using a 70.7mV DC voltage onto a Ag/AgCl reference electrode, the electrical characteristics of immobilization of the oligonucleotide probe of P1 and hybridization with the target single strand DNA of P2 on the EGFET sensing chip were examined in detail. The electrical signals on the change of a threshold voltage (VT) shift at a constant ID (3000μA) in VG-ID characteristic were obtained, and the VT shift value due
APA, Harvard, Vancouver, ISO, and other styles
4

Wang, Ying, Chan Shan, Wei Piao, et al. "3D Numerical Simulation of a Z Gate Layout MOSFET for Radiation Tolerance." Micromachines 9, no. 12 (2018): 659. http://dx.doi.org/10.3390/mi9120659.

Full text
Abstract:
In this paper, for the first time, an n-channel metal-oxide-semiconductor field-effect transistor (NMOSFET) layout with a Z gate and an improved total ionizing dose (TID) tolerance is proposed. The novel layout can be radiation-hardened with a fixed charge density at the shallow trench isolation (STI) of 3.5 × 1012 cm−2. Moreover, it has the advantages of a small footprint, no limitation in W/L design, and a small gate capacitance compared with the enclosed gate layout. Beside the Z gate layout, a non-radiation-hardened single gate layout and a radiation-hardened enclosed gate layout are simul
APA, Harvard, Vancouver, ISO, and other styles
5

Maouhoub, Noureddine, and Khalid Rais. "Extraction of series resistance and mobility degradation parameter in MOSFETs using iterative method." Computer Science and Information Technologies 1, no. 1 (2020): 26–31. https://doi.org/10.11591/csit.v1i1.p26-31.

Full text
Abstract:
Series resistance and mobility attenuation parameter are parasitic phenomena that limit the scaling of advanced MOSFETs. In this work, an iterative method is proposed to extract the series resistance and mobility degradation parameter in short channel MOSFETs. It also allows us to extract the surface roughness amplitude. The principle of this method is based on the exponential model of effective mobility and the least squares methods. From these, two analytical equations are obtained to determine the series resistance and the low field mobility as function of the mobility degradation. The mobi
APA, Harvard, Vancouver, ISO, and other styles
6

Noureddine, Maouhoub, and Rais Khalid. "Extraction of series resistance and mobility degradation parameter in MOSFETs using iterative method." Computer Science and Information Technologies 1, no. 1 (2020): 26–31. https://doi.org/10.5281/zenodo.4063533.

Full text
Abstract:
Series resistance and mobility attenuation parameter are parasitic phenomena that limit the scaling of advanced MOSFETs. In this work, an iterative method is proposed to extract the series resistance and mobility degradation parameter in short channel MOSFETs. It also allows us to extract the surface roughness amplitude. The principle of this method is based on the exponential model of effective mobility and the least squares methods. From these, two analytical equations are obtained to determine the series resistance and the low field mobility as function of the mobility degradation. The mobi
APA, Harvard, Vancouver, ISO, and other styles
7

Lin, Jing-Jenn, Ji-Hua Tao, and You-Lin Wu. "Subthreshold Characteristics of a Metal-Oxide–Semiconductor Field-Effect Transistor with External PVDF Gate Capacitance." Crystals 9, no. 12 (2019): 673. http://dx.doi.org/10.3390/cryst9120673.

Full text
Abstract:
An organic ferroelectric capacitor, using polyvinylidene difluoride (PVDF) as the dielectric, was fabricated. By connecting the PVDF capacitor in series to the gate of a commercially purchased metal-oxide–semiconductor field-effect transistor (MOSFET), drain current (ID)–drain voltage (VD) characteristics and drain current (ID)–gate voltage (VG) characteristics were measured. In addition, the subthreshold slopes of the MOSFET were determined from the ID–VG curves. It was found that the subthreshold slope could be effectively reduced by 23% of its original value when the PVDF capacitor was adde
APA, Harvard, Vancouver, ISO, and other styles
8

Podlepetsky, Boris, Viacheslav Pershenkov, Alexander Bakerenkov, Vladislav Felitsyn, and Alexander Rodin. "Effect of Temperature and Electrical Modes on Radiation Sensitivity of MISFET Dose Sensors." Proceedings 2, no. 13 (2018): 954. http://dx.doi.org/10.3390/proceedings2130954.

Full text
Abstract:
The temperature and electrical modes influences on radiation sensitivity of n-channel MISFETs sensors of the total ionizing dose were investigated. There were measured the MISFET-based dosimeter output voltages V as function of the radiation doses D at const values of the drain current ID and the drain–source voltage VD, as well as the (ID–VG) characteristics before, during and after irradiations at different temperatures T (VG is the gate voltage). It was shown how the conversion function V(D) and the radiation sensitivity SD are depending on the temperature T for different electrical modes.
APA, Harvard, Vancouver, ISO, and other styles
9

Zhang, Hejing, Fan Yang, Jie Zhang, et al. "P‐7.4: Study on The Effect of Organic Thin‐film on Electrical Characteristics of Amorphous Silicon TFT." SID Symposium Digest of Technical Papers 56, S1 (2025): 1196–98. https://doi.org/10.1002/sdtp.19037.

Full text
Abstract:
In this paper, three different structures of TFTs with and without PI were fabricated, and their Id‐Vg transfer characteristics were also compared systematically. The results indicated that PI had certain influences on both the initial Id‐Vg transfer chara cteristics and the PBTS stability of T FTs. The leakage current of TFT s with PI w as at least 3 times higher than that without PI a t 60℃ 60℃, which was unfavorable for the performance of TFTs as GDL circuits and IS. The main reason was the impact of impure polar ions or/and water vapor in PI on the back channel of TFTs. Finally, this study
APA, Harvard, Vancouver, ISO, and other styles
10

Nagahisa, Yuichi, and Eisuke Tokumitsu. "Suppression of Hole Current in Graphene Transistors with N-Type Doped SiC Source/Drain Regions." Materials Science Forum 717-720 (May 2012): 679–82. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.679.

Full text
Abstract:
To achieve graphene channel transistors which have high on/off drain current ratio and unipolar behavior of drain current – gate voltage (ID-VG) characteristics, we fabricated and characterized the top gated graphene channel transistors with n-type doped SiC source/drain regions. Graphene layer was formed on SiC by high temperature annealing in vacuum, and Al2O3 was used as a gate insulator. For the graphene channel transistor with heavily doped n-SiC source/drain regions (doping concentration ND=4.5x1019cm-3) and a 4~6ML graphene channel, ambipolar behavior was observed. On the other hand, wh
APA, Harvard, Vancouver, ISO, and other styles
More sources

Book chapters on the topic "Id-Vg characteristic"

1

Karimi, Hediyeh, Rasoul Rahmani, Elnaz Akbari, Meisam Rahmani, and Mohammad Taghi Ahamdi. "Optimization of Current-Voltage Characteristics of Graphene-Based Biosensors." In Handbook of Research on Nanoelectronic Sensor Modeling and Applications. IGI Global, 2017. http://dx.doi.org/10.4018/978-1-5225-0736-9.ch010.

Full text
Abstract:
The aim of this project is to study and develop graphene-based DNA sensor model for detection of DNA hybridization application. This includes modeling and simulation of carrieconcentration, conductance, and current-voltage characteristics of graphene-based sensors on the field effect transistor (FET) platform. The main challenge is to validate the developed modelwith the experimental data,sincegraphene is considered as a new emerging material and research is still rapidly taking place with fabrication effort reported so far. In this research, first, numerical model is developed which shows the
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Id-Vg characteristic"

1

Tsang, Yuk L., Xiang D. Wang, Reyhan Ricklefs, and Jason Goertz. "Analysis of an Anomalous Transistor Exhibiting Dual-Vt Characteristics and Its Cause in a 90nm Node CMOS Technology." In ISTFA 2012. ASM International, 2012. http://dx.doi.org/10.31399/asm.cp.istfa2012p0106.

Full text
Abstract:
Abstract In this paper, we report a transistor model that has successfully led to the identification of a non visual defect. This model was based on detailed electrical characterization of a MOS NFET exhibiting a threshold voltage (Vt) of just about 40mv lower than normal. This small Vt delta was based on standard graphical extrapolation method in the usual linear Id-Vg plots. We observed, using a semilog plot, two slopes in the Id-Vg curves with Vt delta magnified significantly in the subthreshold region. The two slopes were attributed to two transistors in parallel with different Vts. We fur
APA, Harvard, Vancouver, ISO, and other styles
2

Nazarov, A. N., C. W. Lee, A. Kranti, et al. "Extraction of channel mobility in nanowire MOSFETs using Id(Vg) characteristics and random telegraph noise amplitude." In 2011 12th International Conference on Ultimate Integration on Silicon (ULIS). IEEE, 2011. http://dx.doi.org/10.1109/ulis.2011.5757991.

Full text
APA, Harvard, Vancouver, ISO, and other styles
You might also be interested in the extended bibliographies on the topic 'Id-Vg characteristic' for particular source types:
Journal articles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!

To the bibliography