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Journal articles on the topic 'IGBT inverter'

Author: Grafiati

Published: 7 June 2025

Last updated: 17 July 2025

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Abdalgader, Ibrahim A. S., Sinan Kivrak, and Tolga Özer. "Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications." Micromachines 13, no. 2 (2022): 313. http://dx.doi.org/10.3390/mi13020313.

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The converters used to integrate the ground power station of planes with the utility grid are generally created with silicon-insulated gate bipolar transistor (Si-IGBT)-based semiconductor technologies. The Si-IGBT switch-based converters are inefficient, oversized, and have trouble achieving pure sine wave voltages requirements. The efficiency of the aircraft ground power units (AGPU) can be increased by replacing existing Si-IGBT transistors with silicon carbide (SiC) IGBTs because of the physical constraints of Si-IGBT switches. The primary purpose of this research was to prove that the efficiency increase could be obtained in the case of using SiC-IGBTs in conventional AGPU systems with the realized experimental studies. In this study, three different experimental systems were discussed for this purpose. The first system was the traditional APGU system. The other two systems were single-phase test (SPT) and three-phase inverter systems, respectively. The SPT system and three-phase inverter systems were designed and implemented to compare and make analyses of Si-IGBTs and SiC-IGBTs performance. The efficiency and detailed hard switching behavior comparison were performed between the 1200-V SiC-IGBT- and 1200-V Si-IGBT-based experimental systems. The APGU system and Si-IGBT modules were examined, the switching characteristic and efficiency of the system were obtained in the first experimental study. The second experimental study was carried out on the SPT system. The single-pulse test system was created using Si-IGBTs and SiC-IGBTs switches in the second experimental system. The third experiment included a three-phase-inverter-based test system. The system was created with Si-IGBTs and SiC-IGBTs to compare the two different switch-based inverters under RL loads. The turning off and turning on processes of the IGBT switches were examined and the results were presented. The Si-IGBT efficiency was 77% experimentally in the SPT experimental system. The efficiency of the third experimental system was increased up to 95% by replacing the old Si transistor with a SiC. The efficiency of the three-phase Si-IGBT-based system was 86% for the six-switch case. The efficiencies of the SiC-IGBT-based system were increased to around 92% in the three-phase inverter system experimentally. The findings of the experimental results demonstrated that the SiC-IGBT had a faster switching speed and a smaller loss than the classical Si-IGBT. As a result of the experimental studies, the efficiency increase that could be obtained in the case of using SiC-IGBTs in conventional AGPU systems was revealed.

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Praptomo, Maksum Agung, Iwan Setiawan, and Denis Denis. "PERANCANGAN RANGKAIAN BOOTSTRAP DENGAN IC IR2110 DAN SISTEM INVERTER SATU FASA TOPOLOGI H-BRIDGE BERBASIS IGBT IRG4PC50WD." Transient: Jurnal Ilmiah Teknik Elektro 9, no. 1 (2020): 67–72. http://dx.doi.org/10.14710/transient.v9i1.67-72.

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Inverters widely applied in the industrial world, one of which is in controlling the speed and torque of the induction motor. The main component of an inverter is usually MOSFET or IGBT. MOSFET has large enough value in the turn-on phase.. The load that has an inductance value, IGBT switching losses will increase. IGBT has losses due to tailing current during fall time. This Final Project research aims design an H-bridge topology inverter using IGBT with SPWM triggering technique based on 16-bit dsPIC30f4011 microcontroller equipped with a bootstrap circuit and aims to regulate motor speed. Inverter testing is done by varying the frequency value, then analyzing efficiency and hamonisa when the inverter is in no-load and load condition. H-bridge type inverter with bootstrap capacitor without filter and using motor filter has been successfully realized. The average efficiency value of the inverter in the no-load condition is 86.07%, while the load condition is 86.8%. When the inverter no load condition, the average voltage THD value is 6.02%, while the average current THD value is 12.56%, The condition is obtained for an average voltage THD value of 9.48% , while the average THD value of 10.9%.

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Panneerselvam, Sivaraj, Karunanithi Kandasamy, S. Sivakumar, N. Vignesh Prasanna, and R. Hushein. "Switching loss and temperature analysis of MPWM controller for solar PV inverter." International Journal of Power Electronics and Drive Systems (IJPEDS) 15, no. 4 (2024): 2545. http://dx.doi.org/10.11591/ijpeds.v15.i4.pp2545-2552.

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Despite the fact that temperature affects how much power is produced by solar panels, a temperature that exceeds a certain threshold results in a reduction in output. Additionally, there are losses when switching is controlled in inverters using different control approaches like pulse width modulation (PWM), sinusoidal pulse width modulation (SPWM), and multiple pulse width modulation (MPWM). The type of control method and temperature have an impact on these losses. Here, the MPWM approach is used to analyze it at various temperatures. A metal-oxide-semiconductor field-effect transistor or MOSFET-based and an insulated gate bipolar transistor (IGBT)-based inverter are also planned. Their switching losses at various temperatures are contrasted. For a range of temperature values, the IGBT-equipped inverter is discovered to be a low-loss inverter. Compared to an IGBT inverter, the MOSFET inverter has a comparatively higher loss.

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Panneerselvam, Sivaraj, Karunanithi Kandasamy, S. Sivakumar, N. Vignesh Prasanna, and R. Hushein. "Switching loss and temperature analysis of MPWM controller for solar PV inverter." International Journal of Power Electronics and Drive Systems (IJPEDS) 15, no. 4 (2024): 2545–52. https://doi.org/10.11591/ijpeds.v15.i4.pp2545-2552.

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Oh, Yongseung, Jaeeul Yeon, Jayoon Kang, Ilya Galkin, Wonsoek Oh, and Kyumin Cho. "Sensorless Control of Voltage Peaks in Class-E Single-Ended Resonant Inverter for Induction Heating Rice Cooker." Energies 14, no. 15 (2021): 4545. http://dx.doi.org/10.3390/en14154545.

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Single-ended (SE) resonant inverters are widely used as power converters for high-pressure rice cooker induction, with 1200 V insulated-gate bipolar transistors (IGBTs) being used as switching devices for kW-class products. When voltage fluctuations occur at the input stage of an SE resonant inverter, the resonant voltage applied to the IGBT can be directly affected, potentially exceeding the breakdown voltage of the IGBT, resulting in its failure. Consequently, the resonant voltage should be limited to below a safety threshold—hardware resonant voltage limiting methods are generally used to do so. This paper proposes a sensorless resonant voltage control method that limits the increase in the resonant voltage caused by overvoltage or supply voltage fluctuations. By calculating and predicting the resonance voltage through the analysis of the resonance circuit, the resonance voltage is controlled not to exceed the breakdown voltage of the IGBT. The experimental results of a 1.35 kW SE resonant inverter for a high-pressure induction heating rice cooker were used to verify the validity of the proposed sensorless resonant voltage limiting method.

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Murdianto, Farid Dwi, Indhana Sudihato, Anang Budi Karso, and Wildana Zulfa. "Design of a Single Phase HERIC-SPWM." INTEK: Jurnal Penelitian 9, no. 1 (2022): 7. http://dx.doi.org/10.31963/intek.v9i1.2995.

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Development in the field of technology has experienced rapid development in recent years, especially in inverter. Every year the development of inverters is very fast starting from full bidge inverters to HERIC inverters, inverters are usually used to convert DC voltage to AC, HERIC inverters are modifications of full bidge inverters with 2 additional IGBTs on the output side, therefore this paper will discuss about inverter design. HERIC SPWM 1 phase.The HERIC inverter will be compared with full bridge inverters to find out the advantages of these modifications. The modulation technique here uses SPWM (sinusoidal pulse width modulation) modulation technique as the switching process. IGBT switching on the HERIC inverter to produce the desired output waveform. The methodology for making a 1-phase HERIC SPWM inverter using a source from the PLN road network which will then be rectified by the rectifier. The rectifier output of 311 vdc will then be converted into AC voltage with output by the HERIC inverter.So that by making this single-phase HERIC SPWM inverter it is possible to be efficient and produce the power supply that will be used.

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Jagadeesh, Chirisavada, Gajala Himavarsha, and Bobba Phaneendra Babu. "Review on Laminated Busbars used in High Frequency Inverters." E3S Web of Conferences 184 (2020): 01063. http://dx.doi.org/10.1051/e3sconf/202018401063.

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Improvement in the efficiency and cost in the high frequency inverter will play a major role in its applications like electrical vehicles (EV). A high voltage IGBTs are used in inverters to bear the voltage peaks across the IGBT switch at the turning off period of switch. By decreasing the value of voltage peak, can reduce the voltage rating of IGBT switch, by which the system cost will decrease. Decreasing the value of voltage peak can be achieved by decreasing the inductance of the inverter circuit which includes turned on switch inductance, DC link capacitors inductance and connecting wires inductance. By replacing the connecting wires with a laminated busbar in an inverter, the inductance value of a connecting wires can be reduced. Laminated bus bar is a parallel conductor plates separated by a dielectric medium. Upper plate is considered as positive plate and lower plate is a negative plate. In this paper it gives a detailed information about laminated busbar with different designs, using different conductive materials, their calculated inductance in ANSYS 3D FEM software and concluding with suitable laminated busbar for high frequency inverter.

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Khvitia, Badri, Anna Gheonjian, Zviadi Kutchadze, and Roman Jobava. "A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems." Electronics 10, no. 22 (2021): 2822. http://dx.doi.org/10.3390/electronics10222822.

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We describe two models of Power Transistors (IGBT, MOSFET); both were successfully used for the analysis of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) while modeling high-voltage systems (PFC, DC/DC, inverter, etc.). The first semi-mathematical–behavioral insulated-gate bipolar transistor (IGBT) model introduces nonlinear negative feedback generated in the semiconductor’s p+ and n+ layers, which are located near the metal contact of the IGBT emitter, to better describe the dynamic characteristics of the transistor. A simplified model of the metal–oxide-semiconductor field-effect transistor (MOSFET) in the IGBT is used to simplify this IGBT model. The second simpler behavioral model could be used to model both IGBTs and MOSFETs. Model parameters are obtained from datasheets and then adjusted using results from a single measurement test. Modeling results are compared with measured turn-on and turn-off waveforms for different types of IGBTs. To check the validation of the models, a brushless DC electric motor test setup with an inverter was created. Despite the simplicity of the presented models, a comparison of model predictions with hardware measurements revealed that the model accurately forecasted switch transients and aided EMI–EMC investigations.

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Mangali, Venu Gopal, Shravan Kumar P, Vinay Kumar Awaar, and Praveen Jugge. "DSP based Voltage Source Inverter for an application of Induction Motor control." E3S Web of Conferences 184 (2020): 01057. http://dx.doi.org/10.1051/e3sconf/202018401057.

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The paper presents a Single-phase inverter configuration dependent on IGBTs utilizing a Digital Signal Processor by the SPWM method. The equipment configuration is actualized utilizing IGBT Inverter Module. The equipment results are examined in the paper. The IGBT, which requires 15v of activating pulse to their individual gates, is taken care of through the isolation circuit. The circuit is intended to enhance the pulse from the DSP controller, up to the necessary abundancy, and goes about as an isolation circuit. The inverter input is given through the DC rectifier circuit with consistent voltage, and the output is Controllable AC with variable voltage and frequency.

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Guo, Chun Sheng, Xue Gen Tong, and Jun Gao. "Analysis of Characteristic the Heat Transfer on Mine-Used Inverter." Applied Mechanics and Materials 700 (December 2014): 655–59. http://dx.doi.org/10.4028/www.scientific.net/amm.700.655.

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In this research, the traction inverter of coal winning machine installed on the plate that matched with water cooling, each plate cooled two inverters. Also, the inverter controlled by four quadrants. After calculated the conducting losses and the switching losses of the IGBT module, we analyzed the factors affecting the heat dissipation in the finite element analysis software CFX, the factors include the installation position of IGBT module, the thickness of inverter baseplate and different water flow rate. Comparing with the experiment results, verify the validity and practicability of the presented research method of heat dissipation system.

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Tawfiq, Kotb B., Arafa S. Mansour, and Peter Sergeant. "Mathematical Design and Analysis of Three-Phase Inverters: Different Wide Bandgap Semiconductor Technologies and DC-Link Capacitor Selection." Mathematics 11, no. 9 (2023): 2137. http://dx.doi.org/10.3390/math11092137.

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This paper introduces a mathematical design and analysis of three-phase inverters used in electric drive applications such as aerospace, electric vehicles, and pumping applications. Different wide bandgap (WBG) semiconductor technologies are considered in this analysis. Using SiC MOSFETs and Si IGBTs, two drive systems are developed in order to show the improvement in the efficiency of the inverter. The efficiency, total losses of the drive systems and the power losses of two inverters are computed and compared for both drive systems at the same operating condition. The drive system with SiC MOSFET shows much better performance compared to the drive system with Si IGBT. The SiC MOSFET system provides a 59.39%, 86.13%, and 29.76% lower conduction losses, switching losses and drive’s total losses, respectively, compared to the Si IGBT system. The efficiency of the SiC MOSFET system is 2.46%pu higher than the efficiency of the Si IGBT drive system. Moreover, this paper introduces a detailed analysis for the dc-link voltage and current ripples in three-phase inverters. Furthermore, the minimal dc-link capacitor needed to deal with the ripple current and voltage is investigated. Finally, the performance of the drive with Si IGBT is experimentally tested under different operating speeds and loads.

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Wang, Chuankun, Yigang He, Chenyuan Wang, Xiaoxin Wu, and Lie Li. "A Fusion Algorithm for Online Reliability Evaluation of Microgrid Inverter IGBT." Electronics 9, no. 8 (2020): 1294. http://dx.doi.org/10.3390/electronics9081294.

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Due to the diversity of distributed generation sources, microgrid inverters work under complex and changeable conditions. The core device of inverters, an insulated gate bipolar transistor (IGBT), bears a large amount of thermal stress impact, so its reliability is related to the stable operation of the microgrid. The effect of the IGBT aging process cannot be considered adequately with the existing reliability evaluation methods, which have not yet reached the requirements of online evaluation. This paper proposes a fusion algorithm for online reliability evaluation of microgrid inverter IGBT, which combines condition monitoring and reliability evaluation. Firstly, based on the microgrid inverter topology and IGBT characteristics, an electrothermal coupling model is established to obtain junction temperature data. Secondly, the segmented long short-term memory (LSTM) algorithm is studied, which can accurately predict the aging process of the IGBT and judge the aging state via the limited monitoring data. Then, the parameters of the electrothermal coupling model are corrected according to the aging process. Besides, the fusion algorithm is applied to the practical case. Finally, the data comparison verifies the feasibility of the fusion algorithm, whose cumulative damage degree and estimated life error are 5.10% and 5.83%, respectively.

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Mimouni, A., S. Laribi, M. Sebaa, T. Allaoui, and A. A. Bengharbi. "Fault diagnosis of power converters in a grid connected photovoltaic system using artificial neural networks." Electrical Engineering & Electromechanics, no. 1 (January 4, 2023): 25–30. http://dx.doi.org/10.20998/2074-272x.2023.1.04.

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Introduction. The widespread use of photovoltaic systems in various applications has spotlighted the pressing requirement for reliability, efficiency and continuity of service. The main impediment to a more effective implementation has been the reliability of the power converters. Indeed, the presence of faults in power converters that can cause malfunctions in the photovoltaic system, which can reduce its performance. Novelty. This paper presents a technique for diagnosing open circuit failures in the switches (IGBTs) of power converters (DC-DC converters and three-phase inverters) in a grid-connected photovoltaic system. Purpose. To ensure supply continuity, a fault-diagnosis process is required throughout all phases of energy production, transfer, and conversion. Methods. The diagnostic approach is based on artificial neural networks and the extraction of features corresponding to the open circuit fault of the IGBT switch. This approach is based on the Clarke transformation of the three-phase currents of the inverter output as well as the calculation of the average value of these currents to determine the exact angle of the open circuit fault. Results. This method is able to effectively identify and localize single or multiple open circuit faults of the DC-DC converter IGBT switch or the three-phase inverter IGBT switches.

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Sena, Gianluca, Roberto Marani, and Anna Gina Perri. "POWER SEMICONDUCTORS DEVICES FOR INDUSTRIAL PWM INVERTERS: STATE OF ART." International Journal of Advances in Engineering & Technology 10, no. 1 (2017): 52–65. https://doi.org/10.5281/zenodo.3955545.

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In this paper the state of  art of semiconductors devices for Industrial Pulse-Width Modulation (PWM) Inverters is presented. The last generations of Insulated Gate Bipolar Transistors (IGBTs), Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) Transistors are introduced and analysed. At last a comparison between Si-based IGBT and SiC MOSFET, obtained by SPICE simulations, is presented in order to identify the device which makes the PWM inverter more efficient.

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Qu, Su Rong, and Zhong Yang Zhang. "High Power Inverter Circuit from GTO to IGCT and its Application on AC Driving Locomotive." Advanced Materials Research 354-355 (October 2011): 1394–99. http://dx.doi.org/10.4028/www.scientific.net/amr.354-355.1394.

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IGCT is a kind of new type power electronic device which developed from GTO and IGBT . In this paper, Author based on analysis of the internal structure of GTO, shows how GTO development IGCT through technical methods.Through simulation of its off and on performance, the work curve and comparing results of the two devices are given. Then on two components of the inverter circuits are analyzed and compared. Thinking in large power AC drive locomotive, IGCT inverter is greatly simplifier than GTO inverter circuit, and superior performance,it will become the main converter for AC driving locomotive.

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Rahman, Mohammad Halimur, Md Abdul Mannan, and Mohd Muinul Haq Mamun. "Design and Implementation of a Three-Phase Inverter Operated with different Conduction Modes with Automatic Powerfactor Improvement." AIUB Journal of Science and Engineering (AJSE) 18, no. 2 (2019): 44–48. http://dx.doi.org/10.53799/ajse.v18i2.39.

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Three phase inverters are widely used to control different industrial process. Power electronics based inverters are very popular for fast response and precise control. In this paper an IGBT based three phase power inverter is proposed. Conventional three different conduction modes of 1200, 1500 and 1800 have been adopted. Micro-controller based firing pulse generation circuit using a special multi-winding transformer and opt-coupler to apply isolated firing pulses for each IGBT has been developed and tested successfully. Simulation and test results of the inverter for three phase resistive as well as inductive loads have been presented. The test results are found to be in good agreement with the simulation outcome and also with the theoretical analysis. The main objective is to make an inverter with selectable conduction modes so that specific mode can be defined for resistive or reactive loads. The required correction for PFI is done by adjusting the percentage of duty cycle firing pulse of IGBT to control the capacitive current. The result of the experiment can be used to design PFI (Power Factor Improvement) units for the small industries and domestic users as well. In this paper a three phase inverter of multiple conduction mode with a switching capacitor power factor improvement (PFI) system is analyzed.

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Ma, Long, and Guochu Chen. "IGBT loss analysis and junction temperature calculation based on Simulink." Journal of Physics: Conference Series 2963, no. 1 (2025): 012012. https://doi.org/10.1088/1742-6596/2963/1/012012.

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Abstract The Insulated Gate Bipolar Transistor (IGBT) is a crucial component in inverter systems, and accurately modeling the IGBT in the Controller Hardware-in-the-Loop (CHIL) simulation of inverters is a key challenge. Based on an electrical model of the IGBT, this paper develops an electro-thermal coupling model for IGBT suitable for Hardware-in-the-Loop (HIL) simulation. An IGBT loss model is established, and junction temperature calculations are performed. For a specific Infineon IGBT model, the simulation results obtained from Infineon’s IPOSIM online simulation platform are compared with offline simulation results generated using a fourth-order Foster thermal model in Matlab/Simulink, verifying the accuracy of the proposed model.

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S, Srikanth, and Dr Byamakesh Nayak. "Reliability Improvement of Grid Connected PV Inverter Considering Monofacial and Bifacial Panels Using Hybrid IGBT." International Journal of Electrical and Electronics Research 12, no. 2 (2024): 443–52. http://dx.doi.org/10.37391/ijeer.120216.

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The development of bifacial photovoltaics has led to significant advancements in solar energy. Unlike traditional solar panels, which only generate electricity from the front side, these panels capture the energy from the rear and front surfaces. Bifacial photovoltaics utilize a dual-sided absorption to capture the sunlight that falls on nearby structures and the ground. This technology helps boost their efficiency and makes them an economical and sustainable choice. Furthermore, the increased energy production from the rear side of bifacial panels may lead to higher voltage fluctuations, which affects the thermal stability of PV inverter. Nevertheless, PV inverter is regarded as critical component which affects the reliability performance. Hence in this paper reliability improvement methodology with hybrid IGBT is proposed for the PV inverter. The hybrid IGBT consists of Silicon (Si) IGBT and Silicon Carbide (SiC) Schottky diode. A test case of 3-kW Monofacial and Bifacial grid connected PV inverter system with various albedos is considered. Mission profile for one year at Hyderabad, India location is logged for the assessment. B10 lifetime is calculated for the proposed hybrid IGBT. The effectiveness of the proposed hybrid IGBT is evaluated in comparison with conventional IGBT. The proposed hybrid IGBT significantly improves the reliability performance of the PV inverter.

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A., Mimouni, Laribi S., Sebaa M., Allaoui T., and A. Bengharbi A. "Fault diagnosis of power converters in a grid connected photovoltaic system using artificial neural networks." Electrical Engineering & Electromechanics, no. 1 (January 4, 2023): 25–30. https://doi.org/10.20998/2074-272X.2023.1.04.

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Introduction. The widespread use of photovoltaic systems in various applications has spotlighted the pressing requirement for reliability, efficiency and continuity of service. The main impediment to a more effective implementation has been the reliability of the power converters. Indeed, the presence of faults in power converters that can cause malfunctions in the photovoltaic system, which can reduce its performance. Novelty. This paper presents a technique for diagnosing open circuit failures in the switches (IGBTs) of power converters (DC-DC converters and three-phase inverters) in a grid-connected photovoltaic system. Purpose. To ensure supply continuity, a fault-diagnosis process is required throughout all phases of energy production, transfer, and conversion. Methods. The diagnostic approach is based on artificial neural networks and the extraction of features corresponding to the open circuit fault of the IGBT switch. This approach is based on the Clarke transformation of the three-phase currents of the inverter output as well as the calculation of the average value of these currents to determine the exact angle of the open circuit fault. Results. This method is able to effectively identify and localize single or multiple open circuit faults of the DC-DC converter IGBT switch or the three-phase inverter IGBT switches.

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Shah, Hardik A., Satish K. Shah, and Rakesh M. Patel. "Signal processing analysis of DSP based PWM generation for high switching frequency voltage source inverter." World Journal of Engineering 12, no. 5 (2015): 499–506. http://dx.doi.org/10.1260/1708-5284.12.5.499.

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This paper presents real time hardware implementation of DSP based 180 degree control algorithm and MATLAB SIMULINK based software Implementation for 3-phase 4-leg IGBT based voltage source inverter. Triggering pulses generated using Texas Instruments TMS 320F28335 DSP controller and that triggers the 6 IGBTs of Voltage source inverter. Results of pulse generated using DSP and output of the Voltage source inverter were captured using Digital Storage Oscilloscope. FFT analysis for output signal of software and hardware implementation presented with the analysis.

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Kumar, Kundan, Manuele Bertoluzzo, Giuseppe Buja, and Fernando Ortenzi. "Quantitative Analysis of Efficiency Improvement of a Propulsion Drive by Using SiC Devices: A Case of Study." Advances in Power Electronics 2017 (February 28, 2017): 1–10. http://dx.doi.org/10.1155/2017/9149472.

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One of the emerging research topics in the propulsion drive of the electric vehicles is the improvement in the efficiency of its component parts, namely, the propulsion motor and the associated inverter. This paper is focused on the efficiency of the inverter and analyzes the improvement that follows from the replacement of the silicon (Si) IGBT devices with silicon carbide (SiC) MOSFETs. To this end, the paper starts by deriving the voltage-current solicitations of the inverter over the working torque-speed plane of the propulsion motor. Then, a proper model of the power losses in the inverter over a supply period of the motor is formulated for the two types of device, including the integrated freewheeling diode. By putting together the voltage-current solicitations and the device power losses, the efficiency maps of the Si IGBT and SiC MOSFET inverters are calculated and compared over the torque-speed plane. The results for the Si IGBT inverter are supported by measurements executed on a marketed C-segment compact electric car, while the SiC MOSFET loss model is validated by an on-purpose built test bench. Finally, the overall efficiency of the propulsion drive is calculated by accounting for the motor efficiency. Main outcomes of the paper is a quantitative evaluation of both the improvement in the efficiency achievable with the SiC MOSFETs and the ensuing increase in the electric car range.

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Ramli, Nur Arifah, Auzani Jidin, Zulhani Rasin, and Tole Sutikno. "Reduction of total harmonic distortion of three-phase inverter using alternate switching strategy." International Journal of Power Electronics and Drive Systems (IJPEDS) 12, no. 3 (2021): 1598. http://dx.doi.org/10.11591/ijpeds.v12.i3.pp1598-1608.

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Alternating current (AC) electrical drives mainly require smaller current (or torque) ripples and lower total harmonic distortion (THD) of voltage for excellent drive performances. Normally, in practice, to achieve these requirements, the inverter needs to be operated at high switching frequency. By operating at high switching frequency, the size of filter can be reduced. However, the inverter which oftenly employs insulated gate bipolar transistor (IGBT) for high power applications cannot be operated at high switching frequency. This is because, the IGBT switching frequency cannot be operated above 50 kHz due to its thermal restrictions. This paper proposes an alternate switching strategy to enable the use of IGBT for operating the inverter at high switching frequency to improve THD performances. In this strategy, each IGBT in a group of switches in the modified inverter circuit will operate the switching frequency at one-fourth of the inverter switching frequency. The alternate switching is implemented using simple analog and digital integrated circuits.

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Nur, Arifah Ramli, Jidin Auzani, Rasin Zulhani, and Sutikno Tole. "Reduction of total harmonic distortion of three-phase inverter using alternate switching strategy." International Journal of Power Electronics and Drive Systems (IJPEDS) 12, no. 3 (2021): 1598–608. https://doi.org/10.11591/ijpeds.v12.i3.pp1598-1608.

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Dimitrov, Borislav, Khaled Hayatleh, Steve Barker, and Gordana Collier. "Design, Analysis and Experimental Verification of the Self-Resonant Inverter for Induction Heating Crucible Melting Furnace Based on IGBTs Connected in Parallel." Electricity 2, no. 4 (2021): 439–58. http://dx.doi.org/10.3390/electricity2040026.

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The object of this research was a self-resonated inverter, based on paralleled Insulated-Gate Bipolar Transistors (IGBTs), for high-frequency induction heating equipment, operating in a wide range of output powers, applicable for research and industrial purposes. For the nominal installed capacity for these types of invertors to be improved, the presented inverter with a modified circuit comprising IGBT transistors connected in parallel was explored. The suggested topology required several engineering problems to be solved: minimisation of the current mismatch amongst the paralleled transistors; a precise analysis of the dynamic and static transistors’ parameters; determination of the derating and mismatch factors necessary for a reliable design; experimental verification confirming the applicability of the suggested topology in the investigated inverter. This paper presents the design and analysis of IGBT transistors based on datasheet parameters and mathematical apparatus application. The expected current mismatch and the necessary derating factor, based on the expected mismatch in transistor parameters in a production lot, were determined. The suggested design was experimentally tested and investigated using a self-resonant inverter model in a melting crucible induction laboratory furnace.

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Chenchireddy, Kalagotla, Khammampati R. Sreejyothi, Podishetti Ganesh, Gatla Uday Kiran, Chilukuri Shiva, and Banoth Nithish Kumar. "Fundamental frequency switching strategies of a seven level hybrid cascaded H-bridge multilevel inverter." International Journal of Applied Power Engineering (IJAPE) 13, no. 2 (2024): 263. http://dx.doi.org/10.11591/ijape.v13.i2.pp263-268.

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This paper presents a novel hybrid cascaded H-bridge multilevel inverter (HCHB MLI) designed to address the growing importance of multilevel inverters in the context of renewable energy sources such as solar, wind, and fuel cells. The proposed topology features eight insulated-gate bipolar transistor (IGBT) switches and utilizes two distinct input direct current (DC) sources: a battery and a capacitor, making it a hybrid system. The control strategy employed in this topology is based on fundamental switching frequency techniques. Simulation results of the proposed topology are conducted using MATLAB/Simulink software, while hardware experimentation with a single-phase H-bridge inverter is also demonstrated in the paper. For pulse generation and IGBT switch control, an Arduino UNO microcontroller is utilized. The output voltage of the single-phase H-bridge inverter is verified through experimentation using a cathode-ray oscilloscope (CRO).

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Chenchireddy, Kalagotla, Khammampati R. Sreejyothi, Podishetti Ganesh, Gatla Uday Kiran, Chilukuri Shiva, and Banoth Nithish Kumar. "Fundamental frequency switching strategies of a seven level hybrid cascaded H-bridge multilevel inverter." International Journal of Applied Power Engineering (IJAPE) 13, no. 2 (2024): 263–68. https://doi.org/10.11591/ijape.v13.i2.pp263-268.

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Huang, Haibo, Yulin Kong, Jianfei Chen, et al. "Research on a New Inverter Control Strategy of Induction Heating Power Supply." Electronics 13, no. 17 (2024): 3469. http://dx.doi.org/10.3390/electronics13173469.

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To achieve “high voltage, low current” in the induction heating power circuit, enhance the flexibility of component selection in the circuit, and improve the quality of the inverter’s output waveform, a new control strategy of a single-phase NPC three-level inverter with unipolar frequency-doubling SPWM method is proposed. With the series connection of IGBTs in a single-phase NPC three-level inverter, the voltage withstand requirement of IGBT is reduced by half. The middle four IGBTs are controlled using unipolar frequency-doubling SPWM, while the outer four IGBTs are turned on later and turned off earlier to address the neutral point voltage imbalance issue in the inverter. Simulation results show that, compared with the traditional bipolar SPWM-controlled single-phase full-bridge inverter, the DC-side input voltage of the inverter can be double, and the current flowing through the entire circuit can be halved under the same output power using the proposed method.

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Wang, Zhi Xia, Zou Ge, Zhong Yuan Chen, and Ying Ying Su. "Research of High-Voltage IGBTs for Series Connection with Active Voltage Clamping." Applied Mechanics and Materials 734 (February 2015): 901–5. http://dx.doi.org/10.4028/www.scientific.net/amm.734.901.

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Because of the high voltage, high current and easy to be driven, IGBT become the optimal selection of the power convert system. As the improvement of power electronics, the voltage becomes higher and higher, such as high inverter, HVDC and Flexible HVDC system. The voltage should be dozens of kilo-volt. Single device cannot be used in these occasions. Thus, IGBTs for series connection is necessary.In the series connection of IGBTs, as the result of the different parameters and the delay of the drive signals, the main problem is unequal sharing of voltage respectively. The devices which withstand over voltage might be broken down and result in the fault of the whole circuit. Therefore， it is necessary to protect the over voltage of the IGBT.The method of active voltage clamping for the High-Voltage IGBTs for series connection is presented. The transient voltage suppressor(TVS) lied between the collector and gate of IGBT is adopted as active clamping circuit, and the clamping voltage value is decided by rated IGBT voltage and the working voltage. When turning of on the IGBT, TVS is broken down by over voltage, and the voltage between collector and emitter is clamped．

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Wang, Chuankun, Yigang He, Yunfeng Jiang, and Lie Li. "An Anti-Interference Online Monitoring Method for IGBT Bond Wire Aging." Electronics 10, no. 12 (2021): 1449. http://dx.doi.org/10.3390/electronics10121449.

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Due to the constant changes of the environment and load, the insulated-gate bipolar transistor (IGBT) module is subjected to a large amount of junction temperature (Tj) fluctuations, which often leads to damage to the bond wires. The monitoring parameters of IGBTs are often coupled with Tj, which increases the difficulty of monitoring IGBTs’ health status online. In this paper, based on the collector current (Ic) and collector-emitter on-state voltage (Vce_on) online monitoring circuit, an online monitoring method of IGBT bond wire aging against interference is proposed. First, the bond wire aging model is established, and the Vce_on is selected as the monitoring parameter. Secondly, taking a three-phase inverter circuit as an example, the Vce_on and Ic waveforms of the IGBT module are monitored in real time, and the process of online monitoring is introduced accordingly. Finally, the experimental results output by RT-LAB indicate that the method proposed in this paper can accurately identify the aging state of IGBT bond wires under different conditions.

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Zhang, Fan, Zhiwei Zhang, Zhonglin Zhang, Tianzhen Wang, Jingang Han, and Yassine Amirat. "A Fault-Tolerant Control Method Based on Reconfiguration SPWM Signal for Cascaded Multilevel IGBT-Based Propulsion in Electric Ships." Journal of Marine Science and Engineering 12, no. 3 (2024): 500. http://dx.doi.org/10.3390/jmse12030500.

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Electric ships have been developed in recent years to reduce greenhouse gas emissions. In this system, inverters are the key equipment for the permanent-magnet synchronous motor (PMSM) drive system. The cascaded insulated-gated bipolar transistor (IGBT)-based H-bridge inverter is one of the most attractive multilevel topologies for modern electric ship applications. Usually, the fault-tolerant control strategy is designed to keep the ship in operation for a certain period. However, the fault-tolerant control strategy with hardware redundancy is expensive and slow in response. In addition, after fault-tolerant control, the ship’s PMSM may experience shock and overheating, and IGBT life is reduced due to uneven switching frequency distribution. Therefore, a stratified reconfiguration carrier disposition Sinusoidal Pulse Width Modulation (SPWM) fault-tolerant control strategy is proposed. The proposed strategy can achieve fault tolerance without any extra hardware. A reconfiguration carrier is applied to improve the fundamental amplitude of inverter output voltage to maintain the operation of the ship’s PMSM. In addition, the available states of faulty H-bridge are fully used to contribute to the output. These can improve the life of IGBTs by reducing and balancing the power loss of each H-bridge. The principles of the proposed strategy are described in detail in this study. Taking a cascaded H-bridge seven-level inverter as an example, simulation and experimental results verify that the proposed strategy, in general, has a potential future application on electric ships.

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Asha, Durafe. "Matlab Simulink Model of Sinusoidal PWM For Three Phase Voltage Source Inverter." International Journal of Trend in Scientific Research and Development 2, no. 6 (2018): 753–55. https://doi.org/10.31142/ijtsrd18614.

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This paper concentrates on modeling and simulation of single phase inverter as a frequency changer modulated by sinusoidal Pulse Width Modulation PWM technique. An inverter is a circuit that converts DC sources to AC sources. To judge the quality of voltage produced by a PWM inverter, a detailed harmonic analysis of the voltage waveform is done. Pulse width modulated PWM inverters are among the most used power electronic circuits in practical applications. These inverters are capable of producing ac voltages of variable magnitude as well as variable frequency with less harmonic distortion. The model is executed utilizing MATLAB Simulink software with the SimPower System Block Set using PC simulation. MATLAB Simulink is a successful instrument to examine a PWM inverter. Major reasons for using MATLAB are Faster reaction, accessibility of different simulation devices and the nonappearance of joining issues. In this paper, Insulated Gate Bipolar Transistor IGBT is used as switching power device. IGBT is ideal since it high switching speed and also high input impedance. Finally a MATLAB SIMULINK model for the SPWM is presented. Various simulation results are also included. Asha Durafe "Matlab/Simulink Model of Sinusoidal PWM For Three-Phase Voltage Source Inverter" Published in International Journal of Trend in Scientific Research and Development (ijtsrd), ISSN: 2456-6470, Volume-2 | Issue-6 , October 2018, URL: https://www.ijtsrd.com/papers/ijtsrd18614.pdf

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Qi, Liang, Xu Wang, and Jiake Pan. "IGBT Energy Losses Analysis and Heat Dissipation System Design of Three-level Inverter." Journal of Physics: Conference Series 2260, no. 1 (2022): 012006. http://dx.doi.org/10.1088/1742-6596/2260/1/012006.

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Abstract According to the needs of the design and development of three-level inverter, the paper introduces the design process of the inverter cooling system in detail. Firstly, this paper proposes a calculation method of the energy losses in the insulated gate bipolar transistor(IGBT) and freewheeling diode(FWD), and calculates the energy losses of the IGBT module in the inverter according to the method. Otherwise, a set of the inverter forced air cooling heat dissipation system is designed, and the simulation of the finite element analysis is used for the analysis and optimization of the system. Finally, the test shows that the temperature rise of the IGBT module is within the reasonable range, which verifies the availability and feasibility of the proposed method and the designed system.

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Baimel, Dmitry, and Saad Tapuchi. "A New Topology of Five-Level Neutral Point Clamped Inverter for Motion Control Systems." Applied Mechanics and Materials 432 (September 2013): 336–40. http://dx.doi.org/10.4028/www.scientific.net/amm.432.336.

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The paper presents a new topology of 5-level neutral point clamped inverter that can be used for speed and torque control of synchronous and induction motors. The proposed topology has only two bi-directional and four standard IGBT switches per phase. The significant advantages of the proposed inverter are simpler control and lower number of switches than in the standard 5-level inverters. Extensive simulation results validate the practicability of the proposed inverter. Several aspects as Total Harmonic Distortion Factor of the inverter output currents, and voltages, harmonic content, and frequency spectrum distribution are studied.

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Okilly, Ahmed H., Seungdeog Choi, Sangshin Kwak, et al. "Estimation Technique for IGBT Module Junction Temperature in a High-Power Density Inverter." Machines 11, no. 11 (2023): 990. http://dx.doi.org/10.3390/machines11110990.

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During the last few decades, insulated-gate bipolar transistor (IGBT) power modules have evolved as reliable and useful electronic parts due to the increasing relevance of power inverters in power infrastructure, reliability enhancement, and long-life operation. Excessive temperature stresses caused by excessive power losses frequently cause high-power-density IGBT modules to fail. As a result, module temperature monitoring techniques are critical in designing and selecting IGBT modules for high-power-density applications to guarantee that temperature stresses in the various module components remain within the rated values. In this paper, a module’s different losses were estimated, a heating pipe system for the thermal power cycling technique was proposed, and finite element method (FEM) thermal modeling and module temperature measurement were performed using ANSYS Icepak software version 2022 R1 to determine whether the IGBT module’s temperature rise was within acceptable bounds. To test the proposed technique, a proposed design structure of the practical railway application with a 3.3 MW traction inverter is introduced using commercialized IGBT modules from Semikron company with maximum temperature of about 150 °C. the FEM analysis results showed that the maximum junction temperature is about 109 °C which is in acceptable ranges, confirming the appropriate selection of the employed IGBT module for the target application.

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Khatir, Mohamed, Sid-Ahmed Zidi, Mohammed-Karim Fellah, Samir Hadjeri, and Mohamed Flitti. "The Impact Study of a Statcom on Commutation Failures in an HVDC Inverter Feeding a Weak AC System." Journal of Electrical Engineering 63, no. 2 (2012): 95–102. http://dx.doi.org/10.2478/v10187-012-0014-x.

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The Impact Study of a Statcom on Commutation Failures in an HVDC Inverter Feeding a Weak AC SystemThe Static Synchronous Compensator (STATCOM) devices are pure power electronics devices that use voltage source, IGBT, IGCT or GTO based converters to generate reactive current. This paper illustrates the effect of STATCOM connected whit an HVDC inverter feeding a weak AC network, on the recovery from commutation failures following AC side disturbances. MATLAB/SIMULINK simulation results have demonstrated the robust performance of the proposed system based on the first CIGRÉ HVDC Benchmark model against commutation failures.

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Lee, Heng, Chun Kai Liu, and Tao Chih Chang. "The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter." Materials Science Forum 1004 (July 2020): 1045–53. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1045.

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This paper focuses on how to define and integrate the system level and power module level with optimal conditions in SiC and Si-IGBT. To investigate the above situation, we compare the performance of SiC and Si-IGBT in power module and system level at different ambient temperatures. At the same maximum junction temperature 150°C and ambient temperature at 25°C and 80°C, it found that SiC type electrical resistance, maximum endurable current, and voltage could be better than the IGBT type power module above 20%. On the other hand, the simulation of three-phase inverter at different switching frequency such as 10kHz, 15kHz, 20kHz, 30kHz and it had been observed that the power loss of SiC inverter are 78% less for 10kHz switching frequency; 82% less for switching frequency at 15kHz; 85% less for 20kHz of switching frequency; 89% less for switching frequency at 30kHz in the Si-IGBT three-phase SPWM inverter at ambient temperature 80°C.

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Mi, Zhu, Heng Kun Liu, and Xiao Zhang. "The Design and Simulation of IGBT Inverter Buffer Circuit." Applied Mechanics and Materials 241-244 (December 2012): 1567–72. http://dx.doi.org/10.4028/www.scientific.net/amm.241-244.1567.

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In order to suppress the harmonic and protect the IGBT, an innovative buffer circuit for IGBT was designed and simulated in this paper. Compared with traditional buffer circuit, the proposed RCD buffer circuit is more reliable and can reduce the heat effectively when IGBT is turned off. The analytical expression of the buffer circuit is deduced by theoretical calculation. Finally, the performance of the presented buffer circuit was testified by simulation.

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Wijaya, Mohamad Angger Pamungkas, Chairul Gagarin Irianto, and Teguh Arifianto. "Analysis of the Effectiveness of Silicon Carbide Usage in the Jakarta Metro Traction System Using Matlab." Journal of Railway Transportation and Technology 4, no. 1 (2025): 35–43. https://doi.org/10.37367/jrtt.v4i1.59.

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Switching inverter technology for converting DC to AC using Insulated Gate Bipolar Transistors (IGBTs) has been implemented in the propulsion system of the Jakarta Metro. However, with advancements in power electronics, a newer technology—Silicon Carbide (SiC)—has emerged, offering the potential to reduce switching power losses by up to 30%. The effectiveness of this technology can be evaluated through simulations using MATLAB Simulink, enabling an assessment of its potential application in the Jakarta Metro system. By quantifying this efficiency gain, informed strategic decisions can be made regarding the adoption of SiC technology for DC to AC conversion, whether through the replacement of existing IGBT-based inverters or during the procurement of rolling stock for future phases. The evaluation will be conducted by simulating both existing IGBT parameters and proposed SiC device parameters under current traction motor operating conditions. This simulation aims to determine the output power required to drive the traction motor while maintaining alignment with the current train configuration. A comparative analysis of efficiency between the two technologies will form the basis of this thesis, providing insights into the feasibility and benefits of transitioning to SiC-based inverters for the Jakarta Metro.

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Ramavath, Muneeshwar, and Rama Krishna Puvvula Venkata. "Lifetime (Bx) improvement of PV inverter using Si-SiC H-IGBT/Diode: a reliability approach." Indonesian Journal of Electrical Engineering and Computer Science 35, no. 2 (2024): 704. http://dx.doi.org/10.11591/ijeecs.v35.i2.pp704-710.

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Technological advancements have made it possible to harness the power of renewable energy sources. The efficiency of power electronic devices has increased to almost 98%. In order to reduce the risks of failure and maintain the operation of photovoltaic (PV)-based energy converters, reliable devices are needed. Due to the increasing number of wide-bandgap silicon in electronic converters, the need for more efficient and reliable devices has become more prevalent. However, the cost of these devices is a major issue. Hence, in this work extensive analysis of hybrid silicon (Si)-IGBT and silicon carbide (SiC) antiparallel Diode (H-IGBT/Diode) based PV inverter is proposed to improve the lifetime (Bx). A reliability oriented lifetime assessment is performed on a test case of single stage three kilowatt photovoltaic inverter with 600 V/30 A hybrid switch. Long term mission profile for one year is considered for evaluation at B. V. Raju Institute of Technology (BVRIT), Telangana, India. Finally, B10 lifetime is calculated, comparison analysis is presented between conventional Si-IGBT and proposed Si-SiC H-IGBT/Diode. The results of the study revealed that the H-IGBT exhibited a significant increase in PV inverter reliability.

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Muneeshwar, Ramavath Rama Krishna Puvvula Venkata. "Lifetime (Bx) improvement of PV inverter using Si-SiC H-IGBT/Diode: a reliability approach." Indonesian Journal of Electrical Engineering and Computer Science 35, no. 2 (2024): 704–10. https://doi.org/10.11591/ijeecs.v35.i2.pp704-710.

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Kundu, Animesh, Aiswarya Balamurali, Philip Korta, K. Lakshmi Varaha Iyer, and Narayan C. Kar. "An Approach for Estimating the Reliability of IGBT Power Modules in Electrified Vehicle Traction Inverters." Vehicles 2, no. 3 (2020): 413–23. http://dx.doi.org/10.3390/vehicles2030022.

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The reliability analysis of traction inverters is of great interest due to the use of new semi-conductor devices and inverter topologies in electric vehicles (EVs). Switching devices in the inverter are the most vulnerable component due to the electrical, thermal and mechanical stresses based on various driving conditions. Accurate stress analysis of power module is imperative for development of compact high-performance inverter designs with enhanced reliability. Therefore, this paper presents an inverter reliability estimation approach using an enhanced power loss model developed considering dynamic and transient influence of power semi-conductors. The temperature variation tracking has been improved by incorporating power module component parameters in an LPTN model of the inverter. A 100 kW EV grade traction inverter is used to validate the developed mathematical models towards estimating the inverter performance and subsequently, predicting the remaining useful lifetime of the inverter against two commonly used drive cycles.

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Tuan, D. A., P. Vu, and N. V. Lien. "Design and Control of a Three-Phase T-Type Inverter using Reverse-Blocking IGBTs." Engineering, Technology & Applied Science Research 11, no. 1 (2021): 6614–19. http://dx.doi.org/10.48084/etasr.3954.

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This paper proposes the design and implementation of a 15kW three-phase T-type inverter. Fuji Electric's new generation IGBT module (V series) using RB-IGBT technology is applied for the converter, due to its higher efficiency from conventional IGBTs to reduce switching losses on the semiconductors. Under full load conditions, the overall efficiency of the converter can reach over 98%. The control design and sine PWM modulation are implemented on a DSP kit named TMS320F3F28379D. In addition, the PWM is generated with the fundamental and third harmonics of a sin wave, allowing a modulation factor up to 1,154 compared to traditional PWM. The output voltage of 220V/50Hz with less than 2% of THD can be achieved at the minimum input DC voltage of 550V.

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Shivakumar, P., and S. K. Barik. "Implementation of SVM Based Multi-Level Inverter for Grid Connected PV System." Journal Européen des Systèmes Automatisés 55, no. 3 (2022): 413–18. http://dx.doi.org/10.18280/jesa.550314.

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Multilevel inverters are a novel type of dc–ac converter designed for medium and high voltage and power applications. Cascaded multilevel inverters are the most common inverters used in renewable energy applications. Despite the numerous advantages, the presence of extra circuit components in the design causes reliability concerns with these inverters. Researchers have faced a significant difficulty in constructing inverters with improved dependability by lowering total harmonic distortion (THD). This paper proposes a concept of Grid connected PV system with multilevel inverter topology. The PV system is implemented by using mathematical analysis and MPPT based dc-dc boost converter is used to improve the performance of PV system. In this paper, perturb and observe MPPT technique is implemented. For obtaining better harmonic distortions and proper synchronization with grid a multi-level inverter is implemented. This paper proposes a novel multilevel inverter topology for renewable energy operations which produces 31 and 51 level output voltages. The conventional topology is formed with 10 IGBT switches. A closed loop controller with sinusoidal pulse width modulation technique is implemented to generate gate signals required for 31-Level converter. The 51-Level converter is modelled with 8-IGBT switches and 4-diodes, also space vector and sinusoidal pulse width modulation techniques are used to generate the gate signals for switches. This proposed system is tested and verified in MATLAB and a comparative analysis made between sinusoidal and space vector modulation in 51-Level topology.

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Zhang, Yunxin, Xiaodong Dong, Linxia Wu, et al. "IGBT Gate Boost Drive Technology for Promoting the Overload Capacity of Traction Converter." Micromachines 15, no. 6 (2024): 738. http://dx.doi.org/10.3390/mi15060738.

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Under certain circumstances, a high-speed railway may require constant acceleration or emergency braking, in which case the inverter may experience short-term overload conditions and the current passing through the IGBT will go beyond the rated design tolerance. Under overload conditions, the IGBT loss will increase instantly, raising the power semiconductor device’s junction temperature in the process. This research examines the boosting-gate-voltage-driven IGBT control technology. It increases the gate drive voltage and the IGBT current capacity and decreases the conduction voltage drop of IGBT under short-term overload conditions, reducing the instantaneous loss and temperature rise undulation of IGBT. The working characteristics of IGBT devices are studied, and the influence of gate drive voltage on device loss and temperature rise fluctuations is analyzed. Based on the emergency acceleration and brake conditions of the actual train operation, the short-term overload characteristics of the inverter are analyzed. The optimization analysis of the boosting gate voltage under emergency conditions is carried out, and the IGBT drive circuit with gate voltage pumping function is designed. The effectiveness of the driving circuit is verified through PSpice simulation and actual switching characteristic test. According to the analysis of experimental data, it can be verified that increasing the gate voltage technology can reduce IGBT losses.

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Ghosh, Prabhat Chandra, Pradip K. Sadhu, Debabrata Roy, and Soumya Das. "Selection of semiconductor switches in high frequency inverter fitted contactless power transfer system for reducing input current distortion." World Journal of Engineering 12, no. 5 (2015): 471–78. http://dx.doi.org/10.1260/1708-5284.12.5.471.

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This paper investigates the selection of semiconductor switches used in contactless power transfer (CPT) system. In the present paper a single phase high frequency full bridge inverter using different semiconductor switches like IGBT, MPOSFET and GTO has been considered. Harmonic injection in input current of the inverter for different semiconductor switches has been analyzed using PSIM software. The THD of input current of the inverter for the particular switching device has been determined by using Fourier Transforms. It has been observed that THD in case of the IGBT is minimised.

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Li, Chun Tian, Xiao Bin Zhang, Yi Luo, and Chang Hua Du. "Designing of CO₂ Inverter Welding Power for the Mode of Full-Bridge and IGBT Based on DSP." Applied Mechanics and Materials 80-81 (July 2011): 730–36. http://dx.doi.org/10.4028/www.scientific.net/amm.80-81.730.

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The main and control circuit of co2 welding power, which is mode of full-bridge and IGBT inverter, is designed based on DSP (Digital Signal Processor). The designing include sub-modules based on DSP such as the sampling signal circuit, the control circuit for external characteristics, the PWM (Pulse-Width -Modulation) control circuit of welding inverter, the IGBT drive circuit and etc. This designing can strengthen the reliability of feedback regulation property on co2 inverter welding power can enhance the stability of the parameters from the power system. The experimental result shows that the inverter welding power has good feedback regulation and stability properties during the co2 welding process.

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Liu, Peng Kun, Wei Jiang, and Hui Jun Ren. "Faults Location of Cascaded Inverter Based on Artificial Intelligence." Applied Mechanics and Materials 575 (June 2014): 635–39. http://dx.doi.org/10.4028/www.scientific.net/amm.575.635.

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Cascaded H-bridges inverter has been gaining its ground in recent years because it can satisfy high voltage and power applications with medium volume semiconductors; however, it uses much more semiconductors than the traditional inverters which would increase the fault possibilities. Just because this case Cascaded H-bridges inverter is limited in many important industrial fields. In this paper, we, firstly, discussed the basic unit of Cascaded H-bridges inverter (namely, full-bridge inverter) and classify its inner faults, then we proposed a method to spot the faulty IGBT using neural network. We have also done lots of jobs on this fields which could be seen in the papers of our team.

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Tuan, D., P. Vu, and N. V. Lien. "Design and Control of a Three-Phase T-Type Inverter using Reverse-Blocking IGBTs." Engineering, Technology & Applied Science Research 11, no. 1 (2021): 6614–19. https://doi.org/10.48084/etasr.3954.

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Palanisamy, R., A. Velu, K. Selvakumar, D. Karthikeyan, D. Selvabharathi, and S. Vidyasagar. "A Sub-Region Based Space Vector Modulation Scheme for Dual 2-Level Inverter System." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 6 (2018): 4902. http://dx.doi.org/10.11591/ijece.v8i6.pp4902-4911.

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This paper deals the implementation of 3-level output voltage using dual 2-level inverter with control of sub-region based Space Vector Modulation (SR-SVM). Switching loss and voltage stress are the most important issues in multilevel inverters, for keep away from these problems dual inverter system executed. Using this proposed system, the conventional 3-level inverter voltage vectors and switching vectors can be located. In neutral point clamped multilevel inverter, it carries more load current fluctuations due to the DC link capacitors and it requires large capacitors. Based on the sub-region SVM used to control IGBT switches placed in the dual inverter system. The proposed system improves the output voltage with reduced harmonic content with improved dc voltage utilisation. The simulation and hardware results are verified using matlab/simulink and dsPIC microcontroller.

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Khan, Faisal A., Mohammad Munawar Shees, Mohammed F. Alsharekh, et al. "Open-Circuit Fault Detection in a Multilevel Inverter Using Sub-Band Wavelet Energy." Electronics 11, no. 1 (2021): 123. http://dx.doi.org/10.3390/electronics11010123.

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Recent research has focused on sustainable development and renewable energy resources, thus motivating nonconventional cutting-edge technology development. Multilevel inverters are cost-efficient devices with IGBT switches that can be used in ac power applications with reduced harmonics. They are widely used in the power electronics industry. However, under extreme stress, the IGBT switches can experience a fault, which can lead to undesirable operation. There is a need for a reliable system for detecting switch faults. This paper proposes a signal processing method to detect open-circuit problems in IGBT switches. Relative wavelet energy has been used as a feature for a machine learning algorithm to diagnose and classify the faulted switches. The switching sequence can be altered to restore a healthy output voltage. Inverter faults have been diagnosed by using support vector machine (SVM) and decision tree (DT), and an ensemble model based on decision tree (DT) and XG boost algorithm was developed, which yielded 92%, 88%, and 94.12% accuracy, respectively.

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