Relevant bibliographies by topics / IGBT module

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'IGBT module'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "IGBT module"

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Flores, David, Salvador Hidalgo, and Jesús Urresti. "New generation of 3.3kV IGBTs with monolitically integrated voltage and current sensors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 213–21. http://dx.doi.org/10.2298/fuee1502213f.

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Although IGBT modules are widely used as power semiconductor switch in many high power applications, there are still reliability problems related to the current unbalance between paralleled IGBTs that may destroy the whole module and, eventually, the power system. Indeed, short-circuit and overvoltage events can also destroy some of the IGBTs of the power module. In this sense, the instantaneous monitoring of the anode current and voltage values and the use of a more intelligent gate driver able to work with the signals of each particular IGBT of the module would enhance its operating lifetime. In this sense, the paper describes the design, optimization, fabrication and basic performances of 3.3kV-50A punch-through IGBTs for traction and tap changer applications where anode current and voltage sensors are monolithically integrated within the IGBT core.
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Wu, Huawei, Congjin Ye, Yuanjin Zhang, Jingquan Nie, Yong Kuang, and Zhixiong Li. "Remaining Useful Life Prediction of an IGBT Module in Electric Vehicles Statistical Analysis." Symmetry 12, no. 8 (August 8, 2020): 1325. http://dx.doi.org/10.3390/sym12081325.

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The whole life cycle of an insulated gate bipolar transistor (IGBT) is a kind of asymmetry process, while the whole life cycles of a set of IGBTs can be regarded as a symmetry process. Modelling these symmetry characteristics of the IGBT life cycles enables the improvement of the remaining useful life (RUL) prediction performance. For this purpose, based on the key failure mechanism of IGBT in electric vehicles, a new method for estimating the RUL of an IGBT module is proposed based on the two-stress acceleration synthesis environment of junction temperature and vibration. The maximum likelihood estimation (MLE) was employed to estimate the logarithmic standard deviation and covariance matrix. The Shapiro–Wilk (S–W) test was performed to investigate the satisfaction degree of the RUL of the IGBT module to the lognormal distribution. The accelerated life test datasets of the IGBT module were analyzed using the Weibull++ software. The analysis results demonstrate that the IGBT lifetime is confirmed to lognormal distribution, and the accelerated model accords with the generalized Eyring acceleration model. The proposed method can estimate IGBT RUL in a short time, which provides a certain technical reference for the reliability analysis of the IGBT module.
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Wang, Chenyuan, Yigang He, Chuankun Wang, Lie Li, and Xiaoxin Wu. "Multi-Chip IGBT Module Failure Monitoring Based on Module Transconductance with Temperature Calibration." Electronics 9, no. 10 (September 23, 2020): 1559. http://dx.doi.org/10.3390/electronics9101559.

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The Insulated Gate Bipolar Transistor (IGBT) is the component with the highest failure rate in power converters, and its reliability is a critical issue in power electronics. IGBT module failure is largely caused by solder layer fatigue or bond wires fall-off. This paper proposes a multi-chip IGBT module failure monitoring method based on the module transconductance, which can accurately monitor IGBT module chip failures and bond wire failures. The paper first introduces the failure mechanism and module structure of the multi-chip IGBT module; then, it proposes a reliability model based on the module transconductance and analyzes the relationship between chip failure, bond wire failure, and the transmission characteristic curve of the IGBT module. Finally, the module transconductance under chip failure and bond wire failure is measured and calculated through simulation, and the temperature is calibrated, which can eliminate the influence of temperature on health monitoring. The results show that the method has a high sensitivity to chip failures and bond wire failures, can realize the failure monitoring of multi-chip IGBT modules, and is of great significance for improving the reliability of power converters.
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Wu, Yi Bo, Guo You Liu, Ning Hua Xu, and Ze Chun Dou. "Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density." Applied Mechanics and Materials 303-306 (February 2013): 1902–7. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1902.

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As the IGBT power modules have promising potentials in the application of the field of traction or new energy, the higher power density and higher current rating of the IGBT module become more and more attractive. Thermal resistance is one of the most important characteristics in the application of power semiconductor module. A new 1500A/3300V IGBT module in traction application is developed successfully by Zhuzhou CSR Times Electric Co., Ltd (Lincoln). Thermal resistance management of this IGBT module with high power density is performed in this paper. Based on thermal nodes network, an equivalent circuit model for thermal resistance of power module is highlighted from which the steady state thermal resistance can be optimized by theoretical analysis. Furthermore, thermal numerical simulation of 1500A/3300V IGBT module is accomplished by means of finite element model (FEM). Finally, the thermal equivalent model of the IGBT module is verified by simulation results.
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Xinling, Tang, Pan Yan, Chen Yanfang, Fu Pengyu, and Zhao Zhibin. "Electric Field Analysis of Press-Pack IGBTs." E3S Web of Conferences 64 (2018): 04006. http://dx.doi.org/10.1051/e3sconf/20186404006.

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High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, wire-bonded technology and press-pack technology are available packaging technologies for high voltage IGBT. The press-pack IGBTs have such advantages as low inductance, low thermal impedance and short circuit failure mode than the wire-bonded IGBT module, which especially suit for high voltage power transmission application by series connection. However, the electrical insulation failure modes of press-pack IGBTs are much less known with limited literature published. In this paper, we presented the electric field analysis of a 3D press-pack IGBT model under DC rating voltage test condition. The electric field distribution of the press-pack IGBT stack was solved as an electrostatic problem by employing the finite element method. The results revealed the potential electrical insulation failure modes of the press-pack IGBTs: corona discharge at the edge of silver plate, partial discharge at the micro gap between die and PEEK frame and creeping discharge at the surface of PEEK frame.
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Zheng, Qing Yuan, Min You Chen, Bing Gao, and Nan Jiang. "Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model." Advanced Materials Research 986-987 (July 2014): 823–27. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.823.

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Reliability of IGBT power module is one of the biggest concerns regarding wind power system, which generates the non-uniform distribution of temperature and thermal stress. The effects of non-uniform distribution will cause failure of IGBT module. Therefore, analysis of thermal mechanical stress distribution is crucially important for investigation of IGBT failure mechanism. This paper uses FEM method to establish an electrical-thermal mechanical coupling model of IGBT power module. Firstly, thermal stress distribution of solder layer is studied under power cycling. Then, the effects of initial failure of solder layer on the characteristic of IGBT module is investigated. Experimental results indicate that the strain energy density and inelastic strain are higher which will reduce reliability and lifetime of power modules.
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Kong, Qingyi, Mingxing Du, Ziwei Ouyang, Kexin Wei, and William Gerard Hurley. "A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy." Energies 12, no. 9 (May 11, 2019): 1791. http://dx.doi.org/10.3390/en12091791.

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On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.
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Liu, Chong, Bo Han Zhong, Yu Feng Zhang, and Jin Song Kan. "Research on Calibration of Power IGBT Model Test Equipment." Applied Mechanics and Materials 644-650 (September 2014): 3936–39. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.3936.

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Power IGBT module and its dynamic and static test equipments are widely used. How to calibrate the IGBT module test equipments is in great demand. Based on the investigation of domestic and foreign method for power IGBT module test equipment calibration, the calibration method of the important parameters, pulse current, for this equipment were researched in this passage. the Rogowski coil and the data acquisition unit were used to realize the pulse current amplitude (up to 5000A) calibration. Calibration device for power IGBT module test equipment was setup, calibration specification for power IGBT module test equipment was authorized to ensure the values of power IGBT module test equipment.
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Wang, Chuankun, Yigang He, Yunfeng Jiang, and Lie Li. "An Anti-Interference Online Monitoring Method for IGBT Bond Wire Aging." Electronics 10, no. 12 (June 17, 2021): 1449. http://dx.doi.org/10.3390/electronics10121449.

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Due to the constant changes of the environment and load, the insulated-gate bipolar transistor (IGBT) module is subjected to a large amount of junction temperature (Tj) fluctuations, which often leads to damage to the bond wires. The monitoring parameters of IGBTs are often coupled with Tj, which increases the difficulty of monitoring IGBTs’ health status online. In this paper, based on the collector current (Ic) and collector-emitter on-state voltage (Vce_on) online monitoring circuit, an online monitoring method of IGBT bond wire aging against interference is proposed. First, the bond wire aging model is established, and the Vce_on is selected as the monitoring parameter. Secondly, taking a three-phase inverter circuit as an example, the Vce_on and Ic waveforms of the IGBT module are monitored in real time, and the process of online monitoring is introduced accordingly. Finally, the experimental results output by RT-LAB indicate that the method proposed in this paper can accurately identify the aging state of IGBT bond wires under different conditions.
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Sharma, Yogesh, P. Mumby-Croft, L. Ngwendson, M. Packwood, L. Coulbeck, M. Birkett, C. Kong, H. Jiang, Y. Wang, and I. Deviny. "6.5 kV Si/SiC Hybrid Power Module Technology." Materials Science Forum 963 (July 2019): 859–63. http://dx.doi.org/10.4028/www.scientific.net/msf.963.859.

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Substituting Si diodes with SiC Schottky diodes in Si insulated gate bipolar transistor (IGBT) modules is beneficial, as it can reduce power losses in electrical systems significantly. The fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present is not possible because of the Si diodes. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. Comparisons of the 6.5 kV Si and hybrid SiC at room temperature and high temperature have shown that the switching losses in hybrid SiC substrates are low as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the output waveforms.
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Dissertations / Theses on the topic "IGBT module"

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Norouzian, Zahra. "Modeling of IGBT Modules with Parasitics Elements Evaluation." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-23754.

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The goal of this report is the development of a PSpice based modeling platform for the evaluation of power IGBT modules to be used in HVDC and FACTS applications. The use of simulation tools is of great value in the process of developing new power electronic devices and new converter topologies. By means of this proper model platform, new design ideas and better understanding of devices behavior and related physical phenomena of the modules can be easily estimated and the outcome is reducing the demand of extensive laboratory testing. Particularly important is the choice of a proper model capable of fast simulation times and adequate accuracy, while a challenging issue is to guarantee the convergence of such models given the hard nonlinearities and multiple cross-references involved. The choice of a Spice based simulation platform consisting in a circuitously based model, allows us to evaluate the characteristics of each module as a function of parameters like a dc-voltage, load current, stray inductance and gate driving.
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Sinyan, Ensa. "Modeling of Resonances in a Converter Module including Characterization of IGBT Parasitics." Thesis, KTH, Elektrisk energiomvandling, 2013. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-133354.

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Fast switching operations in IGBTs generate electromagnetic field disturbances, which might cause EMI and functionality issues. For higher frequency characterization, the parasitic inductances and capacitances have to be considered. The characterization of the electromagnetic field disturbances in- and around the converter module could be predicted early in the design. The study involves a high frequency characterization of electric fields (Efield), magnetic fields (H-fields) and the surface currents distribution in a converter module. The high frequency electromagnetic software (CST) was used for the analysis. A given 3D CAD model of an AC/DC converter module was analyzed in CST. The CAD contained IGBT bus-bars interconnections, converter casing, heat sink and other metallic structures. The ACside has six IGBTs and the DC-side has a chopper which has two switches. The IGBTs ONstate and OFF state was modeled with lumped elements. The DC link capacitor was just modeled as lumped elements, while the metallic capacitor casing was included in the 3D model for analyzing the field distribution inside the converter casing. To check the model accuracy, CST models were compared with PEEC (Partial Element Equivalent Circuit) models for simple antenna cases. Using the converter geometry, CST estimates the parasitics and the eventual current, voltage and electromagnetic field distributions for a given excitation signal. The DC-link was excited with a step pulse and the fields were computed. With consideration of specific design details, the modeling approach developed in this study, could be used to construct high frequency models of converter modules for different projects.
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Jiang, Li. "Electrical and Thermal Characterizations of IGBT Module with Pressure-Free Large-Area Sintered Joints." Thesis, Virginia Tech, 2013. http://hdl.handle.net/10919/23903.

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Silver sintering technology has received considerable attention in recent years because it has the potential to be a suitable interconnection material for high-temperature power electronic packaging, such as high melting temperature, high electrical/thermal conductivity, and excellent mechanical reliability. It should be noted, however, that pressure (usually between three to five MPa) was added during the sintering stage for attaching power chips with area larger than 100 mm2. This extra pressure increased the complexity of the sintering process. The maximum chip size processed by pressure-free sintering, in the published resources, was 6 x 6 mm2. One objective of this work was to achieve chip-attachment with area of 13.5 x 13.5 mm2 (a chip size of one kind of commercial IGBT) by pressure-free sintering of nano-silver paste. Another objective was to fabricate high-power (1200 V and 150 A) multi-chip module by pressure-free sintering. In each module (half-bridge), two IGBT dies (13.5 x 13.5 mm2) and two diode dies (10 x 10 mm2) were attached to a DBC substrate. Modules with solder joints (SN100C) and pressure-sintered silver joints were also fabricated as the control group. The peak temperature in the process of of pressure-free sintering of silver was around 260oC, whereas 270oC for vacuum reflowing of solder, and 280oC under three MPa for pressure-sintering of silver. The process for wire bonding, lead-frame attachment, and thermocouple attachment are also recorded. Modules with the above three kinds of joints were first characterized by electrical methods. All of them could block 1200 V DC voltage after packaging, which is the voltage rating of bare dies. Modules were also tested up to the rated current (150 A) and half of the rated voltage (600 V), which were the test conditions in the datasheet for commercial modules with the same voltage and current ratings. I-V characteristics of packaged devices were similar (on-resistance less than 0.5 mohm). All switching waveforms at transient stage (both turn-on and turn-off) were clean. Six switching parameters (turn-on delay, rise time, turn-off delay, fall time, turn-on loss, and turn-off loss) were measured, which were also similar (<9%) among different kinds of modules. The results from electrical characterizations showed that both static characterizations and double-pulse test cannot be used for evaluating the differences among chip-attach layers. All modules were also characterized by their thermal performances. Transient thermal impedances were measured by gate-emitter signals. Two setups for thermal impedance measurement were used. In one setup, the bottoms of modules were left in the air, and in the other setup, bottoms of modules were attached to a chiller (liquid cooling and temperature controlled at 25oC) with thermal grease. Thermal impedances of three kinds of modules still increased after 40 seconds for the testing without chiller, since the thermal resistance of heat convection from bottom copper to the air was included , which was much larger than the sum of the previous layers (from IGBT junction, through the chip-attach layer, to the bottom of DBC substrate). In contrast, thermal impedances became almost stable (less than 3%) after 15 seconds for all modules when the chiller was used. Among these three kinds of modules, the module with pressure sintered joints had the lowest thermal impedance and the thermal resistance (tested with the chiller) around 0.609oK/W, In contrast, the thermal resistance was around 964oK /W for the soldered module, and 2.30oK /W for pressure-free sintered module. In summary, pressure-free large-area sintered joints were achieved and passed the fabrication process for IGBT half-bridge module with wiring bonding. Packaged devices with these kinds of joints were verified with good electrical performance. However, thermal performances of pressure-free joints were worse than solder joints and pressure-sintered joints.
Master of Science
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Rablah, Blake Kenton. "A coupled-circuit representation of IGBT module geometry for high di/dt switching applications." Thesis, University of British Columbia, 2007. http://hdl.handle.net/2429/32231.

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A coupled-circuit element representation of an IGBT module from Westcode Semiconductors Inc. has been developed, simulated, and experimentally confirmed at TRJUMF in Vancouver, BC. This model can be simulated in PSpice to predict the distribution of current within the IGBT module under high di/dt switching conditions. The goal of the simulations is to determine if the module is an acceptable candidate for implementation in a thyratron replacement switch for high-power pulse-power applications. The model developed has been shown to agree well with frequency domain measurements, and also with finite element method (FEM) simulations and boundary element method (BEM) simulations of the device.
Applied Science, Faculty of
Electrical and Computer Engineering, Department of
Graduate
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Yang, Jin. "Modeling of HVDC IGBT in Pspice : Serving an ultimate goal for converter station EMC studies." Thesis, KTH, Elektroteknisk teori och konstruktion, 2015. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-176859.

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An IGBT/diode model with more accurate characteristics than simple switchis required to serve for EMC issues from converter valve. The purpose of thismaster thesis is to develop an IGBT and diode model to achieve both accuratetransient behavior and fast simulation time during single pulse switchingtest circuit for the 4:5 kV and 2:0 kA StakPakTM IGBT module. A gate unitwhich resembles the ABB gate unit is implemented to obtain a good agreementbetween simulation and measurement. For demonstration and verication, theIGBT/diode model is applied in a simplied arm simulation of full scale ABBGeneration 4 HVDC-VSC converter station and capable of a half cell consistingof 8 series-connected IGBTs and their anti-paralleled diodes. The arm simulationresults are analyzed further for converter station EMC studies.Convergence issue is the most important problem in the whole process of modelimplementation and application. To guarantee the convergence in simulationsome characteristics such as the tail voltage at the end of turn-o is disregarded.But overall, the model is validated and adopted successfully.
En IGBT-/diodmodell med mer exakta egenskaper an en enkel switch kravs foratt hantera EMC-problem fran omvandlarventilen. Syftet med denna magisteruppsatsar att utveckla en IGBT- och diodmodell for att uppna bade noggrantovergaende beteende och snabb simuleringstid under enkelpulsomkopplingstestkretsfor 4,5 kV och 2,0 kA-StakPak IGBT-modulen. En grindenhetsom liknar ABB-grindenheten implementeras for att fa god overensstammelsemellan simulering och matning. For demonstration och veriering, tillampasIGBT-/diodmodellen i en forenklad armsimulering av en fullskalig ABB Generation4 HVDC-VSC-omvandlarstation och med kapacitet for en halvcell bestaendeav 8 seriekopplade IGBT och deras anti-parallellkopplade dioder. Resultatenfran armsimuleringen analyseras vidare for EMC-studier av omvandlarstationen.Konvergensfragan ar det viktigaste problemet i hela processen for modellimplementeringoch -tillampning. For att garantera konvergensen i simulering ignorerasvissa egenskaper sasom svansspanningen vid slutet av avstangning. Mentotalt sett, valideras och antas modellen framgangsrikt.
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Rabier, François. "Modélisation par la méthode des plans d'expériences du comportement dynamique d'un module IGBT utilisé en traction ferroviaire." Phd thesis, Toulouse, INPT, 2007. http://oatao.univ-toulouse.fr/7104/1/rabier.pdf.

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La conception des onduleurs de traction ferroviaire développés par Alstom Transport se base sur l'aire de sécurité de ces modules. La surtension et la vitesse de commutation des modules IGBT de forte puissance tels que ceux utilisé en traction ferroviaire peuvent être considérés comme des performances critiques dans la définition de cette aire de sécurité. La modélisation de ces performances, effectuée dans ce travail de recherche, repose sur l'utilisation des méthodes de plan d'expériences. Ces méthodes, définies comme un agencement raisonné d'essais et considérées comme l'un des outils statistiques le plus puissant développé au 20ème siècle, ont permis d'obtenir des modèles de façon empirique en n'effectuant qu'un nombre minimal d'expérimentations. Ces modèles, de forme quadratique, prennent en compte l'ensemble des facteurs préalablement jugés influents sur les performances observées et améliorent la connaissance du comportement dynamique des modules IGBT dans chacune de leurs applications. ABSTRACT : Design of the IGBT power converter developed by Alstom Transport is based on the safety area of these modules. Overvoltage and commutation speed of high power IGBT modules as these used in railway traction can be considered as critical performances in the safety area definition for these modules. In this PhD work, modelling of these performances is made using design of experiments methods. These methods can be define as reasoned organisation of array and considered as one of the most powerful statistical tool developed during the 20th century. Design of experiments allows to obtain empirical models using a minimal number of experiments. These quadratic models take into account all the influent factors on the observed performances previously identify and increase the knowledge of the dynamical behaviour of IGBTs modules in each one of its applications.
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Dabla, Essi Ahoefa. "Approche bayesienne multiéchelle pour la modélisation de la fiabilité d'un module de puissance en environnement ferroviaire." Thesis, Toulouse, INPT, 2019. http://www.theses.fr/2019INPT0102.

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Le contrôle de la fiabilité des composants électroniques critiques est un des enjeux des acteurs du secteur ferroviaire. Les modules de puissance à IGBT (Insulated Gate Bipolar Transistors) appartiennent à cette liste de composants. Ils sont soumis à de fortes contraintes correspondant à celles rencontrées dans des environnements ferroviaires sévères. Les conditions environnementales rencontrées dans l’exploitation ferroviaire et les fortes exigences en termes de disponibilité imposent des niveaux de fiabilité élevés aux IGBT. Dans une optique d’amélioration de leur fiabilité, une méthodologie d’évaluation a été développée basée sur une approche probabiliste et supportée par un réseau bayesien. Pour la mise en place du modèle, plusieurs briques de travail ont été assemblées. En premier lieu, une approche originale nommée « Cycle en U» a été proposée mettant en évidence de façon biunivoque un niveau système associé au train et un niveau composant assimilable à l’IGBT considérés simultanément selon des vues fonctionnelles et dysfonctionnelles. Dans ce cadre, le travail a conduit, dans un premier temps, à mettre en évidence les mécanismes caractérisant, dans une logique descendante, l’influence de la sollicitation du train sur la sollicitation du composant puis, selon une logique ascendante, de l’impact dysfonctionnel de la défaillance au niveau composant sur la fiabilité du système. Dans un deuxième temps, les résultats de cette analyse ont débouché sur la mise en place de la structure d’un modèle bayesien dont le caractère générique lui permet d’être déployé pour la modélisation fiabiliste de tout type de système ferroviaire. Le travail de modélisation basé sur les réseaux bayesiens sert de support au rapprochement entre modèles analytiques (physique de défaillance) et données issues de l’utilisation du composant élémentaire dans son environnement de fonctionnement. Le modèle a été utilisé pour la modélisation de la fiabilité d’un IGBT dans un cadre d’application correspondant au métro de la ville de Chennai en Inde. Les données et connaissances expertes recueillies sur le projet ont permis de déterminer les tables de probabilités du réseau bayesien. Les résultats probabilistes du modèle ont été traduites en indicateurs de fiabilité
The reliability control of critical electronic components is one of the challenges to be faced by railway stakeholders. IGBT (Insulated Gate Bipolar Transistors) power modules belong to this list of components. They are subject to high stresses corresponding to those encountered in harsh railway environments. The environmental conditions encountered in rail operations and the demanding availability requirements impose high levels of reliability on IGBT. In order to improve their reliability, an evaluation methodology has been developed based on a probabilistic approach and supported by a Bayesian network. For the implementation of the model, several working elements were assembled. First, an original approach called "U-Cycle" was proposed, highlighting in a one-to-one way a system level associated with the train and a component level similar to the IGBT considered simultaneously according to functional and dysfunctional views. In this context, the work led, first, to highlight the mechanisms characterizing, in a top-down logic, the influence of train loading on component stress and, in a bottom-up logic, the dysfunctional impact of the failure at component level on system reliability. In a second step, the results of this analysis led to the implementation of the structure of a Bayesian model whose generic nature allows it to be deployed for the reliable modelling of any type of rail system. The modelling work based on Bayesian networks is used to support the reconciliation between analytical models (failure physics) and data from the use of the elementary component in its operating environment. The model was used to model the reliability of an IGBT in an application framework corresponding to the metro in the city of Chennai, India. The data and expert knowledge collected on the project made it possible to determine the probability tables of the Bayesian network. The probabilistic results of the model have been translated into reliability indicators
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Reynes, Hugo. "Conception d'un module électronique de puissance pour application haute tension." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI035.

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Satisfaire les besoins en énergie de manière responsable est possible grâce aux énergies renouvelables, notamment éoliennes et solaires. Cependant ces centres de captation d’énergie sont éloignés dans zones de consommation. Le transport de l’énergie via des réseaux HVDC (haute tension courant continu) permet un rendement et une flexibilité avantageuse face au transport HVAC (haute tension courant alternatif). Ceci est rendu possible grâce aux convertisseurs utilisant l’électronique de puissance. Les récents développements sur les semi-conducteurs à large bande interdite, plus particulièrement le carbure de silicium (SiC) offrent la possibilité de concevoir ces convertisseurs plus simples, utilisant des briques technologiques de plus fort calibre (≤ 10 kV). Cependant le packaging, essentiel à leur bon fonctionnement, ne suit pas ces évolutions. Dans cette thèse, nous explorons les technologies actuelles ainsi que les limites physique et normatives liées au packaging haute tension. Des solutions innovantes sont proposées pour concevoir un module de puissance haute tension, impactant que faiblement les paramètres connexes (résistance thermique, isolation électrique et paramètres environnementaux). Les éléments identifiés comme problématiques sont traités individuellement. La problématique des décharges partielles sur les substrats céramiques métallisés est développée et une solution se basant sur les paramètres géométriques a été testée. Le boitier standard type XHP-3 a été étudié et une solution permettant de le faire fonctionner à 10 kV à fort degré de pollution a été développée
The supply of carbon-free energy is possible with renewable energy. However, windfarms and solar power plants are geographically away from the distribution points. Transporting the energy using the HVDC (High Voltage Direct Current) technology allow for a better yield along the distance and result in a cost effective approach compared to HVAC (High Voltage Alternative Current) lines. Thus, there is a need of high voltage power converters using power electronics. Recent development on wide bandgap semiconductors, especially silicon carbide (SiC) allow a higher blocking voltage (around 10 kV) that would simplify the design of such power electronic converters. On the other hand, the development on packaging technologies needs to follow this trend. In this thesis, an exploration of technological and normative limitation has been done for a high voltage power module design. The main hot spot are clearly identified and innovative solutions are studied to provide a proper response with a low impact on parasitic parameters. Partial Discharges (PD) on ceramic substrates is analyzed and a solution of a high Partial Discharge Inception Voltage (PDIV) is given based on geometrical parameters. The XHP-3 like power modules are studied and a solution allowing a use under 10 kV at a high pollution degree (PD3) is given
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9

Dornic, Nausicaa. "Élaboration et comparaison de deux modèles de durée de vie des fils d’interconnexion des modules de puissance, l’un basé sur les déformations et l’autre sur les dégradations." Thesis, Université Paris-Saclay (ComUE), 2019. http://www.theses.fr/2019SACLN043/document.

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Dans de nombreux domaines, tels que l’industrie des transports ou bien des infrastructures, la tendance est à l’introduction toujours plus importante d’équipements électriques. De ce fait, les industriels sont de plus en plus confrontés à la nécessité de fournir des dispositifs robustes et fiables avec un minimum de maintenance. Les composants électroniques, tels que les transistors IGBTs ou MOSFETs et les diodes rassemblés dans des modules de puissance, sont au cœur de la conversion d'énergie électrique. En conséquence, ils sont soumis en opération à de fortes contraintes environnementales et fonctionnelles (température, humidité…). L’ensemble de ces contraintes a un impact sur la durée de vie des composants, et donc sur la fiabilité des dispositifs. D’un point de vue économique, le remplacement d’un équipement défectueux est moins pénalisant qu’une défaillance brutale du système. Ainsi, l’utilisation d’outils de diagnostic est nécessaire pour prédire la durée de vie restante des dispositifs en opération, et mettre en place une maintenance adaptée et efficace.Pour déterminer la durée de vie restante des modules de puissance en opération, des modèles de durée de vie sont utilisés. La plupart de ces modèles sont établis soit de manière empirique, soit de manière physique, soit de manière statistique. Les modèles empiriques sont les plus courants, car leur réalisation et implémentation sont maintenant bien connues. Ils se basent sur des résultats issus de tests de cyclage accélérés qui reproduisent les contraintes endurées par le module de puissance sous des conditions "accélérées" de fonctionnement. Une extrapolation est ensuite nécessaire pour obtenir l’état de santé du dispositif dans des conditions normales de fonctionnement. Le principal inconvénient de ces modèles réside dans le manque de description des mécanismes physiques responsables de l’endommagement. Ce manque peut mener potentiellement à des erreurs, notamment lors de l’extrapolation. C’est pourquoi les modèles basés sur la physique connaissent un intérêt grandissant.Dans cette thèse, deux modèles de durée de vie basés sur la physique et appliqués aux modules de puissance IGBTs sont proposés et comparés. La première approche est basée sur les déformations induites à l’intérieur de l’assemblage du module lorsque soumis à des contraintes thermiques. Dans ce cas, la dégradation est décrite via la quantification des déformations pour un stress thermique donné. Dans la seconde approche, le modèle de durée de vie est basé directement sur l’endommagement via l’établissement d’un modèle de dégradation. La comparaison des deux modèles met en lumière les défauts et qualités de chacun. D’une manière plus générale, l’établissement et la comparaison de ces modèles s’inscrit dans une démarche de développement d’outils de diagnostic afin de prédire la durée de vie restante des modules de puissance en opération
The domain of power electronics reliability has become an important center of interest with the recent massive system electrification. The manufacturers are more and more confronted to the necessity of producing reliable devices with optimized maintenance. Electronics components, such as IGBTs, diodes and MOSFETs assembled in power modules, are at the center of the systems conversion, and as a consequence, are subjected to high environmental and functional stresses (ambient temperature, vibrations…). All these factors have a strong impact on the components lifetime and thus on the devices reliability. Economically, scheduling a maintenance with a system replacement is less detrimental than a brutal failure of the system. As a consequence, the use of lifetime prognostic tools is necessary. The problematic consists in the health state prediction of power modules in functioning to be able to schedule a maintenance before the failure of the equipment.To be able to determine the remaining useful lifetime of power modules in functioning, lifetime models are used. These models can either be empirical, physical or statistical. The empirical models are the most common ones, because of their easy establishment and implementation. They are based on results from accelerated power cycling tests, which reproduce the stresses endured by the power modules in severe conditions. An extrapolation is then needed to obtain the power module health state in normal functioning conditions. The main drawback of these models is the lack of description of the physical mechanisms leading to damage, resulting potentially in errors in particular during extrapolation. That’s the reason why physical models start to draw more attention.In the thesis, two physical lifetime models of IGBT power modules are proposed. The first approach is based on deformation induced inside the device assembly in operation. The degradation is in this case described by the quantification of deformation related to thermal stresses. In the second approach, the lifetime model is based directly on damage through the establishment of a degradation model. These two lifetime models are finally compared to show the benefits and disadvantages of each. More generally, the establishment and comparison of these models is part of an approach to develop diagnostic tools so that the remaining useful lifetime of power modules can be predicted in operation
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10

Poller, Tilo. "Thermal and thermal-mechanical simulation for the prediction of fatigue processes in packages for power semiconductor devices." Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-154320.

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The knowledge about the reliability of power electronics is necessary for the design of converters. Especially for offshore applications it is essential to know, which fatigue processes happen and how the lifetime can be estimated. Numerical simulation is an important tool for the development of power electronic systems. This thesis analyse the thermal and thermal-mechanical behaviour of packages for power semiconductor devices with the help of simulations. One topic is the evaluation of different thermal models. The main focus is on the description of the thermal cross-coupling between the devices and the influence to the lifetime estimation. The power module is a well established package for power semiconductor devices. It will be explained how the heating period of power cycles influences the failure mode of this package type. Additionally, it will evaluated how SiC devices and DAB substrates influence the power cycling capability. The press-pack is in focus for high power applications as the package short-circuits during an electrical failure without external auxiliary systems. However, the knowledge about the power cycling behaviour is currently limited. With the help of simulations this behaviour will be analysed and possible weak points will be also derived. In the end of the work it will be discussed, how the lifetime can be estimated with help of FEM simulations
Für die Entwicklung von Umrichtern ist die Kenntnis über die Zuverlässigkeit der Leistungselektronik ein wichtiges Kernthema. Insbesondere für Offshore-Anwendungen ist das Wissen über die stattfindenden Ermüdungsprozesse und die Abschätzung der zu erwartenden Lebensdauer der Bauteile essentiell. Hierfür hat sich die Simulation als ein wichtiges Werkzeug für die Entwicklung und Lebensdauerbewertung von leistungselektronischen Anlagen etabliert. In der folgenden Arbeit wird das thermische und das thermisch-mechanische Verhalten der Leistungselektronik mittels Simulationen untersucht. Hierzu wird ein Vergleich zwischen verschiedenen thermischen Modellen für Leistungsbauelemente durchgeführt. Schwerpunkt ist die Beschreibung der thermischen Kopplung zwischen den Chips und deren Einfluss auf die Lebensdauerabschätzung. Ein weiterer Schwerpunkt ist das Leistungsmodul, welches sich als ein Standardgehäuse etabliert hat. Dazu wird erklärt, wie die Variation der Einschaltzeit im aktiven Lastwechseltest den Fehlermodus dieses Gehäusetyps beeinflusst. Weiterhin wird untersucht, wie SiC als Leistungshalbleiter und DAB als Substrat die Zuverlässigkeit beein- flusst. Der Press-Pack ist für Hochleistungsapplikationen von hohem Interesse, da dieses Gehäuse im elektrischen Fehlerfall ohne äußere Unterstützung kurzschliesst. Jedoch ist das Wissen über diese Gehäusetechnologie unter aktiven Lastwechselbedingungen sehr limitiert. Mit Hilfe von Simulationen wird dieses Verhalten untersucht und mögliche Schwachpunkte abgeleitet. Am Ende der Arbeit werden Möglichkeiten untersucht, wie Mithilfe von FEM Simulationen die Lebensdauer von Leistungsmodulen evaluiert werden kann
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Books on the topic "IGBT module"

1

Rectifier, International. IGBT module databook. El Segundo, Calif: International Rectifier, 1992.

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Yun, Chan-Su. Static and dynamic thermal behavior of IGBT power modules. Konstanz: Hartung-Gorre, 2001.

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Ciappa, Mauro. Some reliability aspects of IGBT modules for high-power applications. Konstanz: Hartung-Gorre, 2001.

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Control strategies for balancing ofseries and parallel connected IGBT/diode modules. Konstanz: Hartung-Gorre, 2004.

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Rectifier, International. Power interface products: HEXFET and IGBT muli-chip power SIP modules; designer's manual and product databook. El Segundo, CA: International Rectifier, 1992.

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IGBP, Workshop 13 on Mathematical and Statistical Modelling of Global Change Process (1990 Canberra A. C. T. ). IGBP Workshop 13 on Mathematical and Statistical Modelling of Global Change Processes (Canberra, 23-27 April, 1990). [Canberra]: Centre for Mathematical Analysis, Australian National University, 1990.

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WCRP-GEWEX/IGBP-CP3 Joint Working Group on Land-surface Experiments. Session. Global energy and water cycle experiment (GEWEX): Report of the first session of the WCRP-GEWEX/IGBP-CP3 Joint Working Group on Land-surface Experiments, (Wallingford, UK, 25-26 January 1990). [Paris]: International Council of Scientific Unions ; [Geneva], 1990.

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Perpiñà, X. Reliability and Lifetime Prediction for IGBT Modules in Railway Traction Chains. INTECH Open Access Publisher, 2012.

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Book chapters on the topic "IGBT module"

1

Zhou, Zhenwei, Yanbei Sha, Lu Wei, Mengxue Guo, and Linghui Meng. "Thermal Stress Analysis of IGBT Module Based on ANSYS." In Advances in Intelligent Automation and Soft Computing, 268–75. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-81007-8_30.

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Meng, Linghui, Mengxue Guo, Yize Liu, Yanbei Sha, and Zhenwei Zhou. "Vibration Stress Analysis of IGBT Module Based on ANSYS." In Advances in Intelligent Automation and Soft Computing, 259–67. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-81007-8_29.

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Niu, Pengcheng, Wengen Gao, and Jie Xu. "Research on Testing Method of Low Voltage IGBT Module Parameter." In Communications in Computer and Information Science, 137–56. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-33-6378-6_11.

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Qi, Peiwen, Wendi Zheng, Xinchong Wu, and Xiangyong Zeng. "IGBT Open-Circuit Fault Diagnosis and Location of MMC Sub-module." In Proceedings of PURPLE MOUNTAIN FORUM 2019-International Forum on Smart Grid Protection and Control, 537–47. Singapore: Springer Singapore, 2019. http://dx.doi.org/10.1007/978-981-13-9779-0_44.

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Li, Bo, Yiyi Chen, Yuying Yan, Xuehui Wang, Yong Li, and Yangang Wang. "Heat Spreading Performance of Integrated IGBT Module with Bonded Vapour Chamber for Electric Vehicle." In Advances in Heat Transfer and Thermal Engineering, 509–15. Singapore: Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-33-4765-6_88.

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Zhu, Benchao, Lei Wang, Lei Zhang, Ming Li, and Yanqin Wang. "Lifetime Prediction Model of IGBT Modules in EMU." In Lecture Notes in Electrical Engineering, 591–600. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-2862-0_57.

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Tournier, Dominique, Peter Waind, Phillippe Godignon, L. Coulbeck, José Millán, and Roger Bassett. "4.5 kV-8 A SiC-Schottky Diodes / Si-IGBT Modules." In Silicon Carbide and Related Materials 2005, 1163–66. Stafa: Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1163.

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Moisan, John R. "Coupled Circulation/Biogeochemical Models to Estimate Carbon Flux1." In Global Change – The IGBP Series, 539–58. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92735-8_12.

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Rosenbauer, F., and H. W. Lorenzen. "Behaviour of IGBT Modules in the Temperature Range from 5 to 300 K." In A Cryogenic Engineering Conference Publication, 1865–72. Boston, MA: Springer US, 1996. http://dx.doi.org/10.1007/978-1-4613-0373-2_236.

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Baliga, B. Jayant. "Package and Module Design." In The IGBT Device, 175–92. Elsevier, 2015. http://dx.doi.org/10.1016/b978-1-4557-3143-5.00006-7.

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Conference papers on the topic "IGBT module"

1

Motto, Eric R., John F. Donlon, Masaomi Miyazawa, Mitsuharu Tabata, Hiroki Muraoka, Tomohiro Hieda, and Thomas Radke. "Next generation industrial IGBT module." In 2014 IEEE Energy Conversion Congress and Exposition (ECCE). IEEE, 2014. http://dx.doi.org/10.1109/ecce.2014.6953791.

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Minghui, Z., and K. Komatsu. "Three-phase Advanced Neutral-Point-Clamped IGBT module with Reverse Blocking IGBTs." In 2012 7th International Power Electronics and Motion Control Conference (IPEMC 2012). IEEE, 2012. http://dx.doi.org/10.1109/ipemc.2012.6258835.

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Nguyen, Ba-Sy, and Paul C. P. Chao. "A Switch Module Stacked With 4/3 IGBTs With Balanced Voltage Sharing for PEF Applications." In ASME 2020 29th Conference on Information Storage and Processing Systems. American Society of Mechanical Engineers, 2020. http://dx.doi.org/10.1115/isps2020-1917.

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Abstract Pulsed electric field (PEF) technology is a promising non-thermal pasteurization method that can be utilized to inactivate microorganisms in liquid food with high-voltage PEF. The power switch which is an important component of the PEF systems. This paper presents a design and implementation of an insulated gate bipolar transistor (IGBT) module which includes connections of three series and four parallel IGBTs and its special gate driver for small liquid food treatment systems at home. In this approach, two important issues must be considered. The first is to provide a safe operating condition for each single IGBTs in transient intervals. The second is to design gate drive systems with the capability of driving a large number of discrete devices simultaneously and ensure the current and voltage of single IGBTs in the module to be approximations. To evaluate the operation of the proposed structure, a module of three series and four parallel switches with the voltage capability of 1.8 kV and 60A is tested experimentally.
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Mital, Manu, and Elaine P. Scott. "Thermal Design and Optimization of an IGBT Power Electronic Module." In ASME 2005 International Mechanical Engineering Congress and Exposition. ASMEDC, 2005. http://dx.doi.org/10.1115/imece2005-83058.

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This paper presents thermal design optimization of an insulated gate bipolar transistor (IGBT) integrated power electronic module (IPEM). A commercially available finite element package was used to create a 3D geometric layout of the IGBT module. Thermal simulations were performed under different forced air convection conditions, and for both single and double-sided cooling, to study the effects on the hot-spots and maximum temperature rise of the module. The design optimization for the module was performed by varying parameters (choice of materials and layer thicknesses) and studying their effect on the thermal performance of the module. The results of these studies were several improved designs for the module.
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Fang, Chao, Tong An, Fei Qin, Xiaorui Bie, and Jingyi Zhao. "Study on temperature distribution of IGBT module." In 2017 18th International Conference on Electronic Packaging Technology (ICEPT). IEEE, 2017. http://dx.doi.org/10.1109/icept.2017.8046680.

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Liu, Chun-Kai, Yu-Lin Chao, Shu-Jung Yang, Rong-Chang Fang, Wei-Kuo Han, Jack Tu, Amy Lin, M. H. Yen, and C. K. Liao. "Direct liquid cooling For IGBT power module." In 2014 9th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, 2014. http://dx.doi.org/10.1109/impact.2014.7048421.

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Aide, Xu, Fan Yinhai, Wang Xinxin, and Liu Yuanyuan. "The Mechanism Analysis of IGBT Module Invalidation." In 2006 5th International Power Electronics and Motion Control Conference. IEEE, 2006. http://dx.doi.org/10.1109/ipemc.2006.297252.

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Aide, Xu, Fan Yinhai, Wang Xinxin, and Liu Yuanyuan. "The Mechanism Analysis of IGBT Module Invalidation." In 2006 5th International Power Electronics and Motion Control Conference (IPEMC 2006). IEEE, 2006. http://dx.doi.org/10.1109/ipemc.2006.4778173.

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Chun-Kai Liu, Yu-Lin Chao, June-Chien Chang, Wei Li, Chih-Ming Tzeng, Rong-Chang Fang, Kuo-Shu Kao, Tao-Chih Chang, Chang-Sheng Chen, and Wei-Chung Lo. "IGBT power module packaging for EV applications." In 2012 14th International Conference on Electronic Materials and Packaging (EMAP). IEEE, 2012. http://dx.doi.org/10.1109/emap.2012.6507920.

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Heinzel, T., K. Komatsu, M. Kakefu, S. Okita, Y. Kobayashi, and O. Ikawa. "Three-phase Advanced Neutral-Point-Clamped IGBT module." In 2012 EPE-ECCE Europe Congress. IEEE, 2012. http://dx.doi.org/10.1109/epepemc.2012.6397406.

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Reports on the topic "IGBT module"

1

Ovrebo, Gregory K. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. Fort Belvoir, VA: Defense Technical Information Center, February 2015. http://dx.doi.org/10.21236/ada616757.

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