Journal articles: 'IGBT module'

1

Flores, David, Salvador Hidalgo, and Jesús Urresti. "New generation of 3.3kV IGBTs with monolitically integrated voltage and current sensors." Facta universitatis - series: Electronics and Energetics 28, no. 2 (2015): 213–21. http://dx.doi.org/10.2298/fuee1502213f.

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Although IGBT modules are widely used as power semiconductor switch in many high power applications, there are still reliability problems related to the current unbalance between paralleled IGBTs that may destroy the whole module and, eventually, the power system. Indeed, short-circuit and overvoltage events can also destroy some of the IGBTs of the power module. In this sense, the instantaneous monitoring of the anode current and voltage values and the use of a more intelligent gate driver able to work with the signals of each particular IGBT of the module would enhance its operating lifetime. In this sense, the paper describes the design, optimization, fabrication and basic performances of 3.3kV-50A punch-through IGBTs for traction and tap changer applications where anode current and voltage sensors are monolithically integrated within the IGBT core.

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Wu, Huawei, Congjin Ye, Yuanjin Zhang, Jingquan Nie, Yong Kuang, and Zhixiong Li. "Remaining Useful Life Prediction of an IGBT Module in Electric Vehicles Statistical Analysis." Symmetry 12, no. 8 (August 8, 2020): 1325. http://dx.doi.org/10.3390/sym12081325.

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The whole life cycle of an insulated gate bipolar transistor (IGBT) is a kind of asymmetry process, while the whole life cycles of a set of IGBTs can be regarded as a symmetry process. Modelling these symmetry characteristics of the IGBT life cycles enables the improvement of the remaining useful life (RUL) prediction performance. For this purpose, based on the key failure mechanism of IGBT in electric vehicles, a new method for estimating the RUL of an IGBT module is proposed based on the two-stress acceleration synthesis environment of junction temperature and vibration. The maximum likelihood estimation (MLE) was employed to estimate the logarithmic standard deviation and covariance matrix. The Shapiro–Wilk (S–W) test was performed to investigate the satisfaction degree of the RUL of the IGBT module to the lognormal distribution. The accelerated life test datasets of the IGBT module were analyzed using the Weibull++ software. The analysis results demonstrate that the IGBT lifetime is confirmed to lognormal distribution, and the accelerated model accords with the generalized Eyring acceleration model. The proposed method can estimate IGBT RUL in a short time, which provides a certain technical reference for the reliability analysis of the IGBT module.

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Wang, Chenyuan, Yigang He, Chuankun Wang, Lie Li, and Xiaoxin Wu. "Multi-Chip IGBT Module Failure Monitoring Based on Module Transconductance with Temperature Calibration." Electronics 9, no. 10 (September 23, 2020): 1559. http://dx.doi.org/10.3390/electronics9101559.

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The Insulated Gate Bipolar Transistor (IGBT) is the component with the highest failure rate in power converters, and its reliability is a critical issue in power electronics. IGBT module failure is largely caused by solder layer fatigue or bond wires fall-off. This paper proposes a multi-chip IGBT module failure monitoring method based on the module transconductance, which can accurately monitor IGBT module chip failures and bond wire failures. The paper first introduces the failure mechanism and module structure of the multi-chip IGBT module; then, it proposes a reliability model based on the module transconductance and analyzes the relationship between chip failure, bond wire failure, and the transmission characteristic curve of the IGBT module. Finally, the module transconductance under chip failure and bond wire failure is measured and calculated through simulation, and the temperature is calibrated, which can eliminate the influence of temperature on health monitoring. The results show that the method has a high sensitivity to chip failures and bond wire failures, can realize the failure monitoring of multi-chip IGBT modules, and is of great significance for improving the reliability of power converters.

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Wu, Yi Bo, Guo You Liu, Ning Hua Xu, and Ze Chun Dou. "Thermal Resistance Analysis and Simulation of IGBT Module with High Power Density." Applied Mechanics and Materials 303-306 (February 2013): 1902–7. http://dx.doi.org/10.4028/www.scientific.net/amm.303-306.1902.

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As the IGBT power modules have promising potentials in the application of the field of traction or new energy, the higher power density and higher current rating of the IGBT module become more and more attractive. Thermal resistance is one of the most important characteristics in the application of power semiconductor module. A new 1500A/3300V IGBT module in traction application is developed successfully by Zhuzhou CSR Times Electric Co., Ltd (Lincoln). Thermal resistance management of this IGBT module with high power density is performed in this paper. Based on thermal nodes network, an equivalent circuit model for thermal resistance of power module is highlighted from which the steady state thermal resistance can be optimized by theoretical analysis. Furthermore, thermal numerical simulation of 1500A/3300V IGBT module is accomplished by means of finite element model (FEM). Finally, the thermal equivalent model of the IGBT module is verified by simulation results.

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5

Xinling, Tang, Pan Yan, Chen Yanfang, Fu Pengyu, and Zhao Zhibin. "Electric Field Analysis of Press-Pack IGBTs." E3S Web of Conferences 64 (2018): 04006. http://dx.doi.org/10.1051/e3sconf/20186404006.

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High voltage IGBT module is the ideal option for the VSC-HVDC power transmission application. At present, wire-bonded technology and press-pack technology are available packaging technologies for high voltage IGBT. The press-pack IGBTs have such advantages as low inductance, low thermal impedance and short circuit failure mode than the wire-bonded IGBT module, which especially suit for high voltage power transmission application by series connection. However, the electrical insulation failure modes of press-pack IGBTs are much less known with limited literature published. In this paper, we presented the electric field analysis of a 3D press-pack IGBT model under DC rating voltage test condition. The electric field distribution of the press-pack IGBT stack was solved as an electrostatic problem by employing the finite element method. The results revealed the potential electrical insulation failure modes of the press-pack IGBTs: corona discharge at the edge of silver plate, partial discharge at the micro gap between die and PEEK frame and creeping discharge at the surface of PEEK frame.

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Zheng, Qing Yuan, Min You Chen, Bing Gao, and Nan Jiang. "Analysis of Transient Thermal Stress of IGBT Module Based on Electrical-Thermal-Mechanical Coupling Model." Advanced Materials Research 986-987 (July 2014): 823–27. http://dx.doi.org/10.4028/www.scientific.net/amr.986-987.823.

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Reliability of IGBT power module is one of the biggest concerns regarding wind power system, which generates the non-uniform distribution of temperature and thermal stress. The effects of non-uniform distribution will cause failure of IGBT module. Therefore, analysis of thermal mechanical stress distribution is crucially important for investigation of IGBT failure mechanism. This paper uses FEM method to establish an electrical-thermal mechanical coupling model of IGBT power module. Firstly, thermal stress distribution of solder layer is studied under power cycling. Then, the effects of initial failure of solder layer on the characteristic of IGBT module is investigated. Experimental results indicate that the strain energy density and inelastic strain are higher which will reduce reliability and lifetime of power modules.

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7

Kong, Qingyi, Mingxing Du, Ziwei Ouyang, Kexin Wei, and William Gerard Hurley. "A Method to Monitor IGBT Module Bond Wire Failure Using On-State Voltage Separation Strategy." Energies 12, no. 9 (May 11, 2019): 1791. http://dx.doi.org/10.3390/en12091791.

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On-state voltage is an important thermal parameter for insulated gate bipolar transistor (IGBT) modules. It is employed widely to predict failure in IGBT module bond wires. However, due to restrictions in work environments and measurement methods, it is difficult to ensure the measurement accuracy for the on-state voltage under practical working conditions. To address this problem, an on-state voltage separation strategy is proposed for the IGBT modules with respect to the influence of collector current (Ic) and junction temperature (Tj). This method involves the separation of the on-state voltage into a dependent part and two independent parts during the IGBT module bond wire prediction. Based on the proposed separation strategy, the independent parts in the failure prediction can be removed, making it possible to directly monitor the voltage variations caused by bond wire failure. The experimental results demonstrate that the proposed diagnosis strategy can accurately predict the bond wire failure stage in an IGBT module under different conditions.

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8

Liu, Chong, Bo Han Zhong, Yu Feng Zhang, and Jin Song Kan. "Research on Calibration of Power IGBT Model Test Equipment." Applied Mechanics and Materials 644-650 (September 2014): 3936–39. http://dx.doi.org/10.4028/www.scientific.net/amm.644-650.3936.

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Power IGBT module and its dynamic and static test equipments are widely used. How to calibrate the IGBT module test equipments is in great demand. Based on the investigation of domestic and foreign method for power IGBT module test equipment calibration, the calibration method of the important parameters, pulse current, for this equipment were researched in this passage. the Rogowski coil and the data acquisition unit were used to realize the pulse current amplitude (up to 5000A) calibration. Calibration device for power IGBT module test equipment was setup, calibration specification for power IGBT module test equipment was authorized to ensure the values of power IGBT module test equipment.

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9

Wang, Chuankun, Yigang He, Yunfeng Jiang, and Lie Li. "An Anti-Interference Online Monitoring Method for IGBT Bond Wire Aging." Electronics 10, no. 12 (June 17, 2021): 1449. http://dx.doi.org/10.3390/electronics10121449.

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Due to the constant changes of the environment and load, the insulated-gate bipolar transistor (IGBT) module is subjected to a large amount of junction temperature (Tj) fluctuations, which often leads to damage to the bond wires. The monitoring parameters of IGBTs are often coupled with Tj, which increases the difficulty of monitoring IGBTs’ health status online. In this paper, based on the collector current (Ic) and collector-emitter on-state voltage (Vce_on) online monitoring circuit, an online monitoring method of IGBT bond wire aging against interference is proposed. First, the bond wire aging model is established, and the Vce_on is selected as the monitoring parameter. Secondly, taking a three-phase inverter circuit as an example, the Vce_on and Ic waveforms of the IGBT module are monitored in real time, and the process of online monitoring is introduced accordingly. Finally, the experimental results output by RT-LAB indicate that the method proposed in this paper can accurately identify the aging state of IGBT bond wires under different conditions.

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10

Sharma, Yogesh, P. Mumby-Croft, L. Ngwendson, M. Packwood, L. Coulbeck, M. Birkett, C. Kong, H. Jiang, Y. Wang, and I. Deviny. "6.5 kV Si/SiC Hybrid Power Module Technology." Materials Science Forum 963 (July 2019): 859–63. http://dx.doi.org/10.4028/www.scientific.net/msf.963.859.

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Substituting Si diodes with SiC Schottky diodes in Si insulated gate bipolar transistor (IGBT) modules is beneficial, as it can reduce power losses in electrical systems significantly. The fast switching nature of the SiC diode will allow Si IGBTs to operate at their full high-switching-speed potential, which at present is not possible because of the Si diodes. In this work, the electrical test results for Si-IGBT/4HSiC-Schottky hybrid substrates (hybrid SiC substrates) are presented. Comparisons of the 6.5 kV Si and hybrid SiC at room temperature and high temperature have shown that the switching losses in hybrid SiC substrates are low as compared to those in Si substrates but necessary steps are required to mitigate the ringing observed in the output waveforms.

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11

Zhou, Shengqi, Luowei Zhou, Suncheng Liu, Pengju Sun, Quanming Luo, and Junke Wu. "The Application of Approximate Entropy Theory in Defects Detecting of IGBT Module." Active and Passive Electronic Components 2012 (2012): 1–7. http://dx.doi.org/10.1155/2012/309789.

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Defect is one of the key factors in reducing the reliability of the insulated gate bipolar transistor (IGBT) module, so developing the diagnostic method for defects inside the IGBT module is an important measure to avoid catastrophic failure and improves the reliability of power electronic converters. For this reason, a novel diagnostic method based on the approximate entropy (ApEn) theory is presented in this paper, which can provide statistical diagnosis and allow the operator to replace defective IGBT modules timely. The proposed method is achieved by analyzing the cross ApEn of the gate voltages before and after the occurring of defects. Due to the local damage caused by aging, the intrinsic parasitic parameters of packaging materials or silicon chips inside the IGBT module such as parasitic inductances and capacitances may change over time, which will make remarkable variation in the gate voltage. That is to say the gate voltage is close coupled with the defects. Therefore, the variation is quantified and used as a precursor parameter to evaluate the health status of the IGBT module. Experimental results validate the correctness of the proposed method.

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12

Liu, Xingliang, Guiyun Tian, Yu Chen, Haoze Luo, Jian Zhang, and Wuhua Li. "Non-Contact Degradation Evaluation for IGBT Modules Using Eddy Current Pulsed Thermography Approach." Energies 13, no. 10 (May 21, 2020): 2613. http://dx.doi.org/10.3390/en13102613.

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In this paper, a non-contact degradation evaluation method for insulated gate bipolar transistor (IGBT) modules is proposed based on eddy current pulsed thermography approach. In non-contact heat excitation procedures, a high-power induction heater is introduced to generate heat excitation in IGBT modules. The thermographs of the whole temperature mapping are recorded non-invasively by an IR camera. As a result, the joint degradation of IGBT modules can be evaluated by the transient thermal response curves derived from the recorded thermographs. Firstly, the non-destructive evaluation principle of the eddy current pulsed thermography (ECPT) system for an IGBT module with a heat sink is introduced. A 3D simulation module is built with physical parameters in ANSYS simulations, and then thermal propagation behavior considering the degradation impact is investigated. An experimental ECPT system is set up to verify the effectiveness of the proposed method. The experimental results show that the delay time to peak temperature can be extracted and treated as an effective indicative feature of joint degradation.

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13

Skibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.

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This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits justifying the increased SiC diode cost, such as EMI reduction, increased efficiency, reduced magnetic filter volume and reduced cooling requirements at higher allowable switching frequencies is investigated.

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14

Liu, Jun, Peng Zhang, Xian Zheng Liu, Hai Long Bao, Jin Yuan Li, Wen Guang Liu, and Rong Gang Han. "Package Design of High Power IGBT Module for Electric Vehicle." Applied Mechanics and Materials 568-570 (June 2014): 1227–31. http://dx.doi.org/10.4028/www.scientific.net/amm.568-570.1227.

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IGBT is the important component of electric vehicle. According to the characteristics of IGBT module in electric vehicle, this article introduces the package design of a high power IGBT module. The feature of the scheme is analyzed from the aspects of power chip, substrate, power electrode, control electrode and epoxy resin layer. Experimental results of the sample show the design meets the qualification.

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15

Górecki, Paweł, Krzysztof Górecki, and Janusz Zarębski. "Thermal model of the IGBT module." Journal of Physics: Conference Series 1033 (May 2018): 012001. http://dx.doi.org/10.1088/1742-6596/1033/1/012001.

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16

Njawah Achiri, Humphrey Mokom, Vaclav Smidl, Zdenek Peroutka, and Lubos Streit. "Least Squares Method for Identification of IGBT Thermal Impedance Networks Using Direct Temperature Measurements." Energies 13, no. 14 (July 21, 2020): 3749. http://dx.doi.org/10.3390/en13143749.

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State-of-the-art methods for determining thermal impedance networks for IGBT (Insulated Gate Bipolar Transistor) modules usually involves the establishment of the relationship between the measured transistor or diode voltage and temperature under homogenous temperature distribution across the IGBT module. The junction temperature is recomputed from the established voltage–temperature relationship and used in determining the thermal impedance network. This method requires accurate measurement of voltage drop across the transistors and diodes under specific designed heating and cooling profiles. Validation of the junction temperature is usually done using infrared camera or sensors placed close to the transistors or diodes (in some cases and open IGBT module) so that the measured temperature is as close to the junction as possible. In this paper, we propose an alternative method for determining the IGBT thermal impedance network using the principles of least squares. This method uses measured temperatures for defined heating and cooling cycles under different cooling conditions to determine the thermal impedance network. The results from the proposed method are compared with those obtained using state-of-the-art methods.

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17

Chen, Yiyi, Yuying Yan, and Bo Li. "Thermal Analyses of Power Electronics Integrated with Vapour Chamber Cooling." Automotive Innovation 3, no. 4 (November 18, 2020): 328–35. http://dx.doi.org/10.1007/s42154-020-00123-z.

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AbstractInsulated gate bipolar transistor (IGBT) power module is used for power switching transistor devices in the power supply and motor control circuits in both hybrid electric vehicles and electric vehicles. The target of heat flux of IGBT is continuously increasing due to the demand for power rating improvements and miniaturisation. Without suitable efficient cooling technologies, excessively high temperature and uneven temperature distribution can cause high thermal stress, eventually leading to severe module failures. Therefore, highly efficient cooling solutions are highly required. Vapour chamber with phase change can provide quick heat transfer and low temperature gradient. This study proposes a new IGBT structure integrated with vapour chamber. The tests and simulation results indicate that the thermal and thermo-mechanical performances of IGBT integrated with vapour chamber are better than those of the IGBT with copper baseplate module. The thermal resistance between the junction and heat sink is reduced from 0.25 to 0.14 °C/W, and the temperature uniformity is greatly improved due to the phase change in the vapour chamber. The simulation also investigates the thermal stress distribution, deformation and thermal fatigue lifespan of IGBT power electronics module. A reduction of 21.8% in thermal stress and an increase of 9% in lifespan of Sn–3.5Ag solder are achieved.

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Levchuk, Svetlana, Monika Poebl, and Gerhard Mitic. "Diamond Composites for Power Electronics Application." Advanced Materials Research 59 (December 2008): 143–47. http://dx.doi.org/10.4028/www.scientific.net/amr.59.143.

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In view of power electronics applications, baseplates made from metal diamond composites have been manufactured and characterised. The surface contours of the baseplates were measured during thermal loads up to 180°C starting at room temperature with help of the TherMoiré technique. X-ray analysis investigation was performed to detect porosity and local inhomogeneities of the baseplates. Al- and Cu-based diamond composite baseplates were Ni-plated and used for manufacturing of 3.3 kV IGBT modules. The solder layer between AlN AMB (active metal brazing) substrates and baseplates was investigated by ultrasonic and X-Ray analyses. Thermal resistance of the manufactured IGBT modules was characterised and compared to that of IGBT modules with AlSiC or Cu baseplates. The influence of thermal cycling on the solder layer and thermal resistance of the manufactured module was investigated.

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Suh, Il-Woong, Hoon-Sun Jung, Young-Ho Lee, Young-Hun Kim, and Sung-Hoon Choa. "Heat Dissipation Technology of IGBT Module Package." Journal of the Microelectronics and Packaging Society 21, no. 3 (September 30, 2014): 7–17. http://dx.doi.org/10.6117/kmeps.2014.21.3.007.

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20

Liu, Xian Zheng, Rui Jin, Kun Shan Yu, Li Jun Xie, Hai Long Bao, Yu Zhang, Juan Liu, and Jia Jie Che. "Dissipation Analysis of IGBT Module in FB-ZVZCS-PWM Converter." Applied Mechanics and Materials 433-435 (October 2013): 1347–54. http://dx.doi.org/10.4028/www.scientific.net/amm.433-435.1347.

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Along with the government and market take more and more attention to the energy efficiency of power supply, the loss of IGBT module, as the core device, has become a hot topic. Firstly, the dynamic process of IGBT module is analyzed, an accurate and an estimation method of loss calculate are provided, then the working process and resonant process of phase shift full-bridge soft switching converter is discussed, and constitute of IGBT module loss in the circuit is analyzed. Finally the loss is calculated in the 350A inverter welder example, and a conclusion of reliability and proposal for design are given according to the calculation results.

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Parker-Allotey, Nii Adotei, Dean P. Hamilton, Olayiwola Alatise, Michael R. Jennings, Philip A. Mawby, Rob Nash, and Rob Magill. "Improved Energy Efficiency Using an IGBT/SiC-Schottky Diode Pair." Materials Science Forum 717-720 (May 2012): 1147–50. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1147.

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This paper will demonstrate how the newer Silicon Carbide material semiconductor power devices can contribute to carbon emissions reduction and the speed of adoption of electric vehicles, including hybrids, by enabling significant increases in the driving range. Two IGBT inverter leg modules of identical power rating have been manufactured and tested. One module has silicon-carbide (SiC) Schottky diodes as anti-parallel diodes and the other silicon PiN diodes. The power modules have been tested and demonstrate the superior electrothermal performance of the SiC Schottky diode over the Si PiN diode leading to a reduction in the power module switching losses.

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Zheng, Li Bing, Han Li, Peng Yun Jin, Hua Chao Fang, Chun Lei Wang, and Zhi Ping Wang. "Investigation of the Temperature Character of IGBT Wire Bonding Lift-Off Based the 3-D Thermal-Electro Coupling FEM." Advanced Materials Research 616-618 (December 2012): 1689–92. http://dx.doi.org/10.4028/www.scientific.net/amr.616-618.1689.

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Al wire bonding lift-off is one of the main failure modes of IGBT module. When the severity of the failure mode is different, the temperature character of IGBT is also different. This paper presents a methodology based on 3D electro-thermal coupling finite elements modeling intended to analyze the relation between the failure degree and the temperature, and compares the influence degree of Al wire bonding lift-off to the performance of IGBT module. This method and the corresponding results help to evaluate Al wire bonding lift-off how they influence the performance of IGBT, determine the failure, establish the failure standards and find the optimization of structure design.

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Mangali, Venu Gopal, Shravan Kumar P, Vinay Kumar Awaar, and Praveen Jugge. "DSP based Voltage Source Inverter for an application of Induction Motor control." E3S Web of Conferences 184 (2020): 01057. http://dx.doi.org/10.1051/e3sconf/202018401057.

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The paper presents a Single-phase inverter configuration dependent on IGBTs utilizing a Digital Signal Processor by the SPWM method. The equipment configuration is actualized utilizing IGBT Inverter Module. The equipment results are examined in the paper. The IGBT, which requires 15v of activating pulse to their individual gates, is taken care of through the isolation circuit. The circuit is intended to enhance the pulse from the DSP controller, up to the necessary abundancy, and goes about as an isolation circuit. The inverter input is given through the DC rectifier circuit with consistent voltage, and the output is Controllable AC with variable voltage and frequency.

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Tamate, Michio, Tamiko Sasaki, Akio Toba, Hiromu Takubo, Fernand Pasan, and Kenji Okamoto. "Development of a Low Noise IGBT Module." IEEJ Transactions on Industry Applications 128, no. 7 (2008): 926–32. http://dx.doi.org/10.1541/ieejias.128.926.

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Li, Yu Zhu, Wei Jiang Ni, Zhe Yang Li, Yun Li, Chen Chen, and Xiao Jian Chen. "600V-30A 4H-SiC JBS and Si IGBT Hybrid Module." Materials Science Forum 679-680 (March 2011): 714–17. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.714.

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600V-30A 4H-SiC Junction Barrier Schottky（JBS）diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module，and switching measurements were done at 125°C. As free-wheeling diode for Si IGBT, 600V SiC JBS diode was compared to 600V ultra-fast diode from International Rectifier. SiC diode achieved 90% recovery loss reduction and corresponding IGBT showed 30% lower turn-on loss. However, SiC JBS diode has larger on-state voltage drop due to small chip area. On-state power loss will be lowered by increasing SiC chip area.

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Lee, Cheol-Woo, and Chul-Goo Kang. "Simplification for Lifetime Prediction of an IGBT Module." Journal of Institute of Control, Robotics and Systems 24, no. 7 (July 31, 2018): 632–38. http://dx.doi.org/10.5302/j.icros.2018.18.0014.

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Lee, Heng, Chun Kai Liu, and Tao Chih Chang. "The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter." Materials Science Forum 1004 (July 2020): 1045–53. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1045.

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This paper focuses on how to define and integrate the system level and power module level with optimal conditions in SiC and Si-IGBT. To investigate the above situation, we compare the performance of SiC and Si-IGBT in power module and system level at different ambient temperatures. At the same maximum junction temperature 150°C and ambient temperature at 25°C and 80°C, it found that SiC type electrical resistance, maximum endurable current, and voltage could be better than the IGBT type power module above 20%. On the other hand, the simulation of three-phase inverter at different switching frequency such as 10kHz, 15kHz, 20kHz, 30kHz and it had been observed that the power loss of SiC inverter are 78% less for 10kHz switching frequency; 82% less for switching frequency at 15kHz; 85% less for 20kHz of switching frequency; 89% less for switching frequency at 30kHz in the Si-IGBT three-phase SPWM inverter at ambient temperature 80°C.

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Perpiñà, X., J. F. Serviere, X. Jordà, A. Fauquet, S. Hidalgo, J. Urresti-Ibañez, J. Rebollo, and M. Mermet-Guyennet. "IGBT module failure analysis in railway applications." Microelectronics Reliability 48, no. 8-9 (August 2008): 1427–31. http://dx.doi.org/10.1016/j.microrel.2008.06.032.

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Tamate, Michio, Tamiko Sasaki, Akio Toba, Hiromu Takubo, Fernand Pasan, and Kenji Okamoto. "Development of a low-noise IGBT module." Electrical Engineering in Japan 171, no. 4 (June 2010): 45–52. http://dx.doi.org/10.1002/eej.20971.

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Zhang, Jingxuan, Hexu Sun, Zexian Sun, Yan Dong, and Weichao Dong. "Open-Circuit Fault Diagnosis of Wind Power Converter Using Variational Mode Decomposition, Trend Feature Analysis and Deep Belief Network." Applied Sciences 10, no. 6 (March 21, 2020): 2146. http://dx.doi.org/10.3390/app10062146.

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The power converter is a significant device in a wind power system. The wind turbine will be shut down and off grid immediately with the occurrence of the insulated gate bipolar transistor (IGBT) module open-circuit fault of the power converter, which will seriously impact the stability of grid and even threaten personal safety. However, in the existing diagnosis strategies for the power converter there are few single and double IGBT module open-circuit fault diagnosis methods producing negative results, including erroneous judgment, omissive judgment and low accuracy. In this paper, a novel method to diagnose the single and double IGBT modules open-circuit faults of the permanent magnet synchronous generator (PMSG) wind turbine grid-side converter (GSC) is proposed: Primarily, by collecting the three-phase current varying with a wind speed of 22 states, including a normal state and 21 failure states of PMSG wind turbine GSC as the original signal data. Afterward, the original signal data are decomposed by using variational mode decomposition (VMD) to obtain the mode coefficient series, which are analyzed by the proposed method base on fault trend feature for extracting the trend feature vectors. Finally, the trend feature vectors are utilized as the input of the deep belief network (DBN) for decision-making and obtaining the classification results. The simulation and experimental results show that the proposed method can diagnose the single and double IGBT modules open-circuit faults of GSC, and the accuracy is higher than the benchmark models.

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Du, Yu Jie, Jin Yuan Li, Peng Wang, and Mei Ting Cui. "Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance." Materials Science Forum 954 (May 2019): 194–201. http://dx.doi.org/10.4028/www.scientific.net/msf.954.194.

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Silicon carbide (SiC) devices have been gradually applied in power electronic for the characteristics of high voltage, high power densities, elevated operating temperature and low switching energy loss. In this paper, a SiC MOSFET welding power module is proposed based on high voltage Si IGBT standard module structure to evaluate the thermal performance. The thermal lateral spread model expounds the expansion of the heat flow in the vertical crossing of a thermal conductor, and thermal resistance distributions of packaging materials in Silicon carbide and Silicon power module are studied through the COMSOL Multiphysics finite element software based on the thermal lateral spread model assumption that minute changes in thermal conductivity would produce no alterations in heat spreading angle. The result indicate that SiC MOSFET module gives the larger thermal resistance than the Si IGBT module with the same encapsulation structure but higher power densities for SiC, what’s more, the solder for die attach and direct bonding copper which include upper copper, substrate and lower copper contribute more thermal resistance in SiC MOSFET module. The differences of thermal Performance in SiC and Si modules can be obtained to benefit us in optimizing SiC MOSFET power module structure design and packaging materials selection.

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Améni Driss, Samah Maalej, and Mohamed Chaker Zaghdoudi. "Electro-Thermal Modeling of Power IGBT Module Cooled by A Heat Pipe Cooling System." Journal of Advanced Research in Fluid Mechanics and Thermal Sciences 86, no. 1 (August 12, 2021): 105–22. http://dx.doi.org/10.37934/arfmts.86.1.105122.

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This paper deals with the development of an electro-thermal model of an Insulated Gate Bipolar Transistor (IGBT) with a water-cooled heat pipe cooling system. Firstly, a thermal model of the heat pipe cooling system is proposed. Then, an electro-thermal model of the IGBT is developed to predict the junction temperature variations in transient operation. The thermal model of the IGBT is determined on the base of the thermal-capacitance lumped method. The electrical model of the IGBT is developed by considering the effect of the junction temperature on its static electrical parameters. Finally, the electro-thermal model is considered in a boost converter application. The model predictions show the effectiveness of the heat pipe cooling system for different commutation frequencies. It is proved that the heat pipe cooling system can keep the junction temperature of the IGBT at values allowing safe operation.

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He, Pu Zhen, Li Bing Zheng, Hua Chao Fang, Chun Lei Wang, and Jun Hua. "Investigation of the Temperature Character of IGBT Failure Mode Based the 3-D Thermal-Electro Coupling FEM." Advanced Materials Research 655-657 (January 2013): 1576–80. http://dx.doi.org/10.4028/www.scientific.net/amr.655-657.1576.

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Al wire bonding lift-off and solder delamination are the main failure modes of IGBT module. When the severity of the failure mode is different, the temperature character of IGBT is also different. This paper presents a methodology based on 3D electro-thermal coupling finite elements modeling intended to analyze the relation between the failure degree and the temperature, and compares the influence degree of two kinds of failure modes to the performance of IGBT module. The results suggest the bonding lift-off has more influence than the solder delamination on the same load and boundary conditions. This method and the corresponding results help to evaluate these failure modes how they influence the performance of IGBT, determine the failure, establish the failure standards and find the optimization of structure design.

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Tuan, D. A., P. Vu, and N. V. Lien. "Design and Control of a Three-Phase T-Type Inverter using Reverse-Blocking IGBTs." Engineering, Technology & Applied Science Research 11, no. 1 (February 6, 2021): 6614–19. http://dx.doi.org/10.48084/etasr.3954.

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This paper proposes the design and implementation of a 15kW three-phase T-type inverter. Fuji Electric's new generation IGBT module (V series) using RB-IGBT technology is applied for the converter, due to its higher efficiency from conventional IGBTs to reduce switching losses on the semiconductors. Under full load conditions, the overall efficiency of the converter can reach over 98%. The control design and sine PWM modulation are implemented on a DSP kit named TMS320F3F28379D. In addition, the PWM is generated with the fundamental and third harmonics of a sin wave, allowing a modulation factor up to 1,154 compared to traditional PWM. The output voltage of 220V/50Hz with less than 2% of THD can be achieved at the minimum input DC voltage of 550V.

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Denk, Marco, and Mark-M. Bakran. "Online Junction Temperature Cycle Recording of an IGBT Power Module in a Hybrid Car." Advances in Power Electronics 2015 (March 2, 2015): 1–14. http://dx.doi.org/10.1155/2015/652389.

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The accuracy of the lifetime calculation approach of IGBT power modules used in hybrid-electric powertrains suffers greatly from the inaccurate knowledge of application typical load-profiles. To verify the theoretical load-profiles with data from the field this paper presents a concept to record all junction temperature cycles of an IGBT power module during its operation in a test vehicle. For this purpose the IGBT junction temperature is measured with a modified gate driver that determines the temperature sensitive IGBT internal gate resistor by superimposing the negative gate voltage with a high-frequency identification signal. An integrated control unit manages the TJ measurement during the regular switching operation, the exchange of data with the system controller, and the automatic calibration of the sensor system. To calculate and store temperature cycles on a microcontroller an online Rainflow counting algorithm was developed. The special feature of this algorithm is a very accurate extraction of lifetime relevant information with a significantly reduced calculation and storage effort. Until now the recording concept could be realized and tested within a laboratory voltage source inverter. Currently the IGBT driver with integrated junction temperature measurement and the online cycle recording algorithm is integrated in the voltage source inverter of first test vehicles. Such research will provide representative load-profiles to verify and optimize the theoretical load-profiles used in today’s lifetime calculation.

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Li, Hao, Meng Zhao, Hao Yan, and Xingwu Yang. "Nanoseconds Switching Time Monitoring of Insulated Gate Bipolar Transistor Module by Under-Sampling Reconstruction of High-Speed Switching Transitions Signal." Electronics 8, no. 10 (October 22, 2019): 1203. http://dx.doi.org/10.3390/electronics8101203.

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An insulated gate bipolar transistor (IGBT) is one of the most reliable critical components in power electronics systems (PESs). The switching time during IGBT turn-on/off transitions is a good health status indicator for IGBT. However, online monitoring of IGBT switching time is still difficult in practice due to the requirement of extremely high sampling rate for nanoseconds time resolution. The compressed sensing (CS) method shows a potential to overcome the technical difficult by reducing the sampling rate. To further improve the efficiency and reduce the computational time for IGBT online condition monitoring (CM), an under-sampling reconstruction method of an IGBT high-speed switching signal is presented in this paper. First, the physical mechanism and signal characteristics of IGBT switching transitions are analyzed. Then, by utilizing the sparse characteristics of IGBT switching signal in the wavelet domain, the wavelet basis is used for sparse representation. The stagewise orthogonal matching pursuit (StOMP) algorithm is proposed to enhance the convergence speed for switching signal reconstruction. Experiments are performed on not only a double-pulse test rig but also a real Pulse-Width Modulation (PWM) converter. Results show that the IGBT high-speed switching transitions signal can be accurately recovered with a reduced sampling rate and the nanoseconds switching time change can be monitored for IGBT CM.

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Wang, Yan Gang, Dinesh Chamund, Shi Ping Li, Kevin Wu, Steve Jones, and Gary Liu. "Lifetime Prediction for Power IGBT Modules in Metro Traction Systems." Advanced Materials Research 846-847 (November 2013): 724–31. http://dx.doi.org/10.4028/www.scientific.net/amr.846-847.724.

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In this work, the methodology and procedures of lifetime prediction for power IGBT modules are presented. Firstly, we discuss the long term reliability tests of power modules for developing lifetime models, and review some reported lifetime models. Then, the procedures of lifetime prediction in real applications are addressed, which include power loss calculations based on the actual mission profile, the conversion of power loss profile to temperature profile according to the module's thermal properties, the temperature cycles counting by Rainflow algorithm, and lifetime calculation by the fatigue linear accumulation damage theory. Finally, the lifetime of a 3300V/800A IGBT module manufactured by Dynex Semiconductor of China Southern Railway applied in metro traction systems is predicted.

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Zhang, Dianhao, Xiao-guang Huang, Bin-liang Cheng, and Neng Zhang. "Numerical analysis and thermal fatigue life prediction of solder layer in a SiC-IGBT power module." Frattura ed Integrità Strutturale 15, no. 55 (December 28, 2020): 316–26. http://dx.doi.org/10.3221/igf-esis.55.24.

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Limited by the mechanical properties of materials, silicon (Si) carbide insulated gate bipolar transistor (IGBT) can no longer meet the requirements of high power and high frequency electronic devices. Silicon carbide (SiC) IGBT, represented by SiC MOSFET, combines the excellent performance of SiC materials and IGBT devices, and becomes an ideal device for high-frequency and high-temperature electronic devices. Even so, the thermal fatigue failure of SiC IGBT, which directly determines its application and promotion, is a problem worthy of attention. In this study, the thermal fatigue behavior of SiC-IGBT under cyclic temperature cycles was investigated by finite element method. The finite element thermomechanical model was established, and stress-strain distribution and creep characteristics of the SnAgCu solder layer were obtained. The thermal fatigue life of the solder was predicted by the creep, shear strain and energy model respectively, and the failure position and factor of failure were discussed.

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Wang, Qiu Yan, Yan Liu, Ping Xu, and Da Cheng Luo. "A Novel Half Bridge Drive Circuit Applied in IGBT Module." Applied Mechanics and Materials 635-637 (September 2014): 1181–86. http://dx.doi.org/10.4028/www.scientific.net/amm.635-637.1181.

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A high performance and high voltage half-bridge novel IGBT driver circuit is described in this paper. The module integrates dual insulated driving and special protection circuits. It has high push-pull driving capability, bootstrap power supply technology and is easy for inverter miniature design. The paper also introduces the application in portable diesel engine generator and discusses some attention items in practical application. Experimental results show that this driving module has better performance and can reliably drive and protect IGBT.

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Li, Bin, Ke Qing Xiong, Yi Sun, and Bing Qi. "Safety P-Cycle Protection Mechanism for Smart Power Device." Advanced Materials Research 804 (September 2013): 228–32. http://dx.doi.org/10.4028/www.scientific.net/amr.804.228.

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Power converter with full closed loop water cooling system, works not only use water cooling characteristics of high efficiency, but also the electricity, and reducing the volume to prevent contamination. In this paper, we proposed a novel p-cycle safety protection approach that can provide rapid cycling radiating, and can restore the status of power device. For power cabinet composition, IGBT power modules and reactors is primarary radiating components, in which IGBT power modules that used for water cooling solution is modeled as the cooled automobile engine cooling system using cycling design principle. Besides, machine side and the network side of the power module is installed in separate cabinet to improve the tightness of the entire cabinet, in order to resist sandstorms.

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Kong, Qingyi, Mingxing Du, Ziwei Ouyang, Kexin Wei, and William Hurley. "A Model of the On-State Voltage across IGBT Modules Based on Physical Structure and Conduction Mechanisms." Energies 12, no. 5 (March 5, 2019): 851. http://dx.doi.org/10.3390/en12050851.

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The on-state voltage is an important electrical parameter of insulated gate bipolar transistor (IGBT) modules. Due to limits in instrumentation and methods, it is difficult to ensure accurate measurements of the on-state voltage in practical working conditions. Based on the physical structure and conduction mechanism of the IGBT module, this paper models the on-state voltage and gives a detailed method for extracting the on-state voltage. Experiments not only demonstrate the feasibility of the on-state voltage separation method but also suggest a method for measuring and extracting the model parameters. Furthermore, on-state voltage measurements and simulation results certified the accuracy of this method.

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Micol, A., C. Martin, and M. Mermet-Guyennet. "Viscoplastic Behaviour Reliability Analysis of IGBT Module Solders." IFAC Proceedings Volumes 43, no. 3 (2010): 80–85. http://dx.doi.org/10.3182/20100701-2-pt-4012.00015.

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Ghimire, Pramod, Kristian Bonderup Pedersen, Bjørn Rannestad, and Stig Munk-Nielsen. "Ageing monitoring in IGBT module under sinusoidal loading." Microelectronics Reliability 55, no. 9-10 (August 2015): 1945–49. http://dx.doi.org/10.1016/j.microrel.2015.06.025.

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Lin, Xin, Huawei Wu, Zhen Liu, Baosheng Ying, Congjin Ye, Yuanjin Zhang, and Zhixiong Li. "Design and Analysis of the IGBT Heat Dissipation Structure Based on Computational Continuum Mechanics." Entropy 22, no. 8 (July 26, 2020): 816. http://dx.doi.org/10.3390/e22080816.

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With the trend of high integration and high power of insulated gate bipolar transistor (IGBT) components, strict requirements have been placed on the heat dissipation capabilities of the IGBT devices. On the basis of traditional rectangular fins, this paper developed two new types of heat-dissipating fins to meet the high requirements of heat dissipation for the IGBT devices. One is the rectangular radiator with a groove length of 2.5 mm and a width of 0.85 mm, the other is the arc radiator with the angle of 125 arc angle, 0.8 mm arc height, and 1.4 mm circle radius. After theoretically calculating the IGBT junction temperature, numerical simulations have been implemented to verify the theoretical result. The commercial CFD software, STAR-CCM+, was employed to simulate the heat dissipation characteristics of the IGBT module under different wind speeds, power, and fin structures. By analyzing the temperature field and vector field of the IGBT module, the analysis results demonstrate that the error between the simulation result and the theoretical calculation is within 5%, which proves the feasibility of the newly designed heat-dissipating fins. When the wind speed is 12.5 m/s, the power is 110 W, the fin height is 31.2 mm, and the fin thickness is 2.3 mm, the rectangular radiator can achieve the best heat dissipation performance.

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Li, Dang, Jun Lu Wang, Yong Li, Jian Hua Li, and Pin Rong Lin. "A Preliminary Study on CSAMT Anti-Jamming Transmitter System." Advanced Materials Research 962-965 (June 2014): 317–21. http://dx.doi.org/10.4028/www.scientific.net/amr.962-965.317.

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On the basis of the relevant identification theory of pseudo-random code signal, the signals of CSAMT are divided into three parts according to the frequency of the signal. The signals which are susceptible to 50Hz interference signal and its harmonic components should be set by pseudo-random code way. Others are set by single square waveform way. The Control and signal generation software of the transmitter system is built on the advanced virtual instrument platform, LabVIEW. The hardware of the transmitter system is mainly composed of host computer, data acquisition card, high-speed optocoupler, IGBT driver module and four IGBT switches. The data acquisition card generate PWM signals, the high-speed optocoupler isolates low-voltage part and high-voltage part. IGBT drive module and four IGBT switches constitute high-voltage part. Entire transmitter system is suitable for different environments and research tasks, the transmit frequency are adjustable, and the pseudo-random code signal has strong capability to suppress the interference signals. The control software on host computer is simple and clear. There is good prospect for the use.

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Boettcher, Lars, S. Karaszkiewicz, D. Manessis, and A. Ostmann. "Development of Embedded High Power Electronics Modules for Automotive Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, DPC (January 1, 2013): 001717–43. http://dx.doi.org/10.4071/2013dpc-wp35.

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The automotive industry has a strong demand for highly reliable and cost-efficient electronics. Especially the upcoming generations of hybrid cars and fully electrical vehicles need compact and efficient 400 V power modules. Within the engine compartment installation space is of major concern. Therefore small size and high integration level of the modules are needed. Conventionally IGBTs and diodes are soldered to DCB (Direct Copper Bond) ceramics substrates and their top contacts are connected by heavy Al wire bonds. These ceramic modules are vacuum soldered to water-cooled base plates. Embedding of power switches, and controller into compact modules using PCB (Printed Circuit Board) technologies offers the potential to further improve the thermal management by double-sided cooling and to reduce the thickness of the module. In the recently started “HI-LEVEL” (Integration of Power Electronics in in High Current PCBs for Electric Vehicle Application) project, partners from automotive, automotive supplier, material supplier, PCB manufacturer and research teamed up to develop the technology, components and materials to realize high power modules. The following topics of the development will be addressed in detail in this paper:Assemble of power dies (IGBT and diode) using new sinter die attach materials:The deployment of new no pressure, low temperature sinter paste for the assembly of the power dies is a mayor development goal. Here the development of a reliable process to realize a defect free bonding of large IGBT dies (up to 10x14mm2) is essentially. These pastes are applied by stencil printing or dispensing and the sintering will take place after die placement at temperatures of around 200 °C.Thick copper substrate technology:To handle the high switching current, suitable copper tracks in the PCB are required. The realization of such thick copper lines (up to 1mm thickness) requires advanced processing, compared to conventional multilayer PCB production. In this paper the essential development steps towards a 10 kW inverter module with embedded components will be described. The process steps and reliability investigations of the different interconnect levels will be described in detail.

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Guo, Chun Sheng, Xue Gen Tong, and Jun Gao. "Analysis of Characteristic the Heat Transfer on Mine-Used Inverter." Applied Mechanics and Materials 700 (December 2014): 655–59. http://dx.doi.org/10.4028/www.scientific.net/amm.700.655.

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In this research, the traction inverter of coal winning machine installed on the plate that matched with water cooling, each plate cooled two inverters. Also, the inverter controlled by four quadrants. After calculated the conducting losses and the switching losses of the IGBT module, we analyzed the factors affecting the heat dissipation in the finite element analysis software CFX, the factors include the installation position of IGBT module, the thickness of inverter baseplate and different water flow rate. Comparing with the experiment results, verify the validity and practicability of the presented research method of heat dissipation system.

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Hu, Zilang, Xinglai Ge, Dong Xie, Yichi Zhang, Bo Yao, Jian Dai, and Fengbo Yang. "An Aging-Degree Evaluation Method for IGBT Bond Wire with Online Multivariate Monitoring." Energies 12, no. 20 (October 18, 2019): 3962. http://dx.doi.org/10.3390/en12203962.

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The aging fracture of bonding wire is one of the main reasons for failure of insulated gate bipolar transistor (IGBT). This paper proposes an online monitoring method for IGBT bonding wire aging that does not interfere with the normal operation of the IGBT module. A quantitative analysis of aging degree was first performed, and the results of multivariate and univariate monitoring were compared. Based on the relationship between the monitoring parameters and the aging of the IGBT bonding wire, gradual damage of the IGBT bond wire was implemented to simulate aging failure and obtain the aging data. Moreover, the change of junction temperature was considered to regulate monitoring parameters. Then, the aging degree was evaluated by an artificial neural network (ANN) algorithm. The experimental results showed the effectiveness of the proposed method.

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Kwon, Oh Young, Young Moon Jang, Young-ho Lee, and Sung-Hoon Choa. "Numerical Fatigue Life Prediction of IGBT Module for Electronic Locomotive." Journal of the Microelectronics and Packaging Society 24, no. 1 (March 31, 2017): 103–11. http://dx.doi.org/10.6117/kmeps.2017.24.1.103.

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Schaeffer, C. H., J. P. Ferrieux, L. Pierrat, and R. Perret. "The Steady State Thermal Behaviour of an IGBT Module." EPE Journal 2, no. 4 (January 1992): 233–42. http://dx.doi.org/10.1080/09398368.1992.11463302.

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Journal articles on the topic 'IGBT module'

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