Relevant bibliographies by topics / IGBT Switching Loss

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Academic literature on the topic 'IGBT Switching Loss'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 February 2022

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Journal articles on the topic "IGBT Switching Loss"

1

Watanabe, Naoki, Hiroyuki Yoshimoto, Yuki Mori, and Akio Shima. "Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure." Materials Science Forum 963 (July 2019): 660–65. http://dx.doi.org/10.4028/www.scientific.net/msf.963.660.

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6.5-kV SiC IGBT with novel drift layer structure is developed to eliminate collector voltage steepening during turn-off and thus to suppress a ringing noise. The proposed IGBT has a depletion-controlled structure (DCS) of a two-step drift layer to suppress the increase of a depletion layer during the turn-off. We fabricated n-channel SiC IGBTs with DCS designed for a blocking voltage of 6.5 kV. Also, we applied our original backside-grinding-last (BG-last) process that enables low switching loss. The DCS device successfully reduced a riging of the gate voltage and had a turn-off loss of 17.6 mJ with 3.6-kV and 32-A switching operation. Although this value is larger than that of the conventional devices (8.8 mJ) due to a tail current, it is still quite low compared with the reported switching loss of SiC IGBTs with the proper switching curves, which is estimated to be 46.1 mJ with the same rated voltage and current.
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2

Singh, Ranbir, Siddarth Sundaresan, Stoyan Jeliazkov, Deepak Veereddy, and Eric Lieser. ">1200 V, >50A SILICON CARBIDE SUPER JUNCTION TRANSISTOR." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (2011): 000104–7. http://dx.doi.org/10.4071/hiten-paper3-rsingh.

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The electrical performance of GeneSiC's 1200 V/7 A SiC Super Junction Transistor (SJT) is compared with three best-in-class commercial Si IGBTs in this paper. Low leakage currents of < 100 μA at 325 °C operating temperature, switching transients < 15 ns at 250 °C, Common Source current gains of 63 and on-resistance as low as 220 mΩ were measured on the SiC SJTs. For switching 7 A, 800 V at 100 kHz, the SiC SJT+GeneSiC SiC Schottky rectifier as Free Wheeling Diode (FWD) achieved a total power loss reduction of about 64% when compared to the best all-Si IGBT+FWD configuration and a power loss reduction of about 47 %, when compared to the best Si IGBT + SiC Schottky FWD.
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3

Sundaresan, Siddarth, Brian Grummel, and Ranbir Singh. "Comparison of Energy Losses in High-Current 1700 V Switches." Materials Science Forum 858 (May 2016): 933–36. http://dx.doi.org/10.4028/www.scientific.net/msf.858.933.

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1700 V/20 mΩ SiC Junction Transistors (SJTs) were recently released by GeneSiC with specific on-resistance as low as 2.3 mΩ-cm2, and current gain > 100. This paper benchmarks the electrical characteristics of the 1700 V SJTs against two best-in-class Si IGBTs. The SJT features 47% and 49% lower on-state voltage drops than the two Si IGBTs, respectively, with the SJT operating at 175°C, and the IGBTs at 150°C. The conduction power loss of the best Si IGBT is 2.2 times larger than the SJT at 25°C, and 1.6 times larger at 150°C. The leakage currents measured on the best IGBT at 1700 V and 150°C is 0.93 mA, as compared to 200 nA for the SJT at 175°C. As compared to the SJT, 3.6x and 3.3x higher (hard) switching energy losses are measured on the best 1700 V Si IGBT, at 25°C, and 150°C, respectively, when switching at a DC link voltage of 1200 V.
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4

Hobart, Karl D., Eugene A. Imhoff, Fritz J. Kub, et al. "Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT." Materials Science Forum 717-720 (May 2012): 941–44. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.941.

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The performance of Junction Barrier Schottky (JBS) diodes developed for medium voltage hard-switched Naval power conversion is reported. Nominally 60 A, 4.5kV rated JBS freewheeling diodes were paired with similarly rated Si IGBTs and evaluated for temperature dependent static and dynamic characteristics as well as HTRB and surge capability. The SiC JBS/Si IGBT pair was also directly compared to Si PiN diode/Si IGBT with similar ratings. Compared to Si, the SiC freewheeling diode produced over twenty times lower reverse recovery charge leading to approximately a factor-of-four-reduction in turn-on loss. Alternatively, for equivalent total switching loss, the SiC JBS/Si IGBT hybrid configuration allows for at least a 50% increase in specific switched power density. Reliability testing showed the devices to be robust with zero failures.
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5

Chakraborty, Avijit, Pradip Kumar Sadhu, Kallol Bhaumik, Palash Pal, and Nitai Pal. "Performance Analysis of High frequency Parallel Quasi Resonant Inverter Based Induction Heating System." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 2 (2016): 447. http://dx.doi.org/10.11591/ijece.v6i2.8034.

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This paper presents the performance analysis of high frequency parallel quasi-resonant converter for domestic induction heating application as well as industrial application. The power semiconductor switch like IGBT is incorporated in this high frequency converter. Parallel Quasi-resonant topology is selected to provide ZVS and ZCS operation during switching conditions to reduce switching losses. Here, IGBT provides better efficiency and faster switching technique. In the proposed topology, a diode is connected across the IGBT ensuring the ZVS operation during turn-ON that enhances the possibility of less turn-ON loss. On the other hand, the switching frequency nearly equal to the resonant frequency ensures the ZCS operation of the IGBT during turn-OFF, which also ensures a reduction of turn-OFF loss. As a result, the performance of the induction heating system gets improved. The proposed scheme is analyzed using PSIM software environment.
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6

Ma, Xiao Jun, Zong Min Yang, Chun Guang Liu, and Yu Lin Yan. "Real Time Simulation of Insulated Gate Bipolar Transistor." Applied Mechanics and Materials 299 (February 2013): 75–78. http://dx.doi.org/10.4028/www.scientific.net/amm.299.75.

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The voltage spike, current spike and power loss in switching process is important factors in reliability of insulated gate bipolar transistor (IGBT). The real time simulation of IGBT is studied in this paper, taking the basic cell of IGBT power electronic circuit as an example. The function model of IGBT for real time simulation is built by piecewise interpolation method, in which the parameters are get from the datasheet. The real time simulation of IGBT is realized in field programmable gate array (FPGA), and the results can reflect the key performances of switching process.
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7

Imaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, et al. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." Materials Science Forum 527-529 (October 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.

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Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of SiC modules decrease monotonically with a decrease in gate resistance, namely switching speed. The result shows the potential of unipolar device SiC power modules.
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8

Bazzi, Ali M., Philip T. Krein, Jonathan W. Kimball, and Kevin Kepley. "IGBT and Diode Loss Estimation Under Hysteresis Switching." IEEE Transactions on Power Electronics 27, no. 3 (2012): 1044–48. http://dx.doi.org/10.1109/tpel.2011.2164267.

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9

Wang, Baochao, Shili Dong, Shanlin Jiang, et al. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs." Energies 12, no. 6 (2019): 1146. http://dx.doi.org/10.3390/en12061146.

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The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic characteristics of GaN HEMT are compared with Si-IGBT, including forward and reverse conducting character, and switching time. Then, the elemental switching losses are analyzed based on measured data. Finally, on a complementary buck converter level, the overall efficiency and EMI-related common-mode currents are compared. For the tested conditions, it is found that the GaN HEMT switching loss is much less than for the same power class IGBT. However, it is worth noting that special attention should be paid to reverse conduction losses in the PWM dead time (or dead band) of complementary-modulated converter legs. When migrating from IGBT to GaN, choosing a dead-time and negative gate drive voltage in conventional IGBT manner can make GaN reverse conducting losses high. It is suggested to use 0 V turn-off gate voltage and minimize the GaN dead time in order to make full use of the GaN advantages.
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10

Lee, Heng, Chun Kai Liu, and Tao Chih Chang. "The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter." Materials Science Forum 1004 (July 2020): 1045–53. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1045.

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This paper focuses on how to define and integrate the system level and power module level with optimal conditions in SiC and Si-IGBT. To investigate the above situation, we compare the performance of SiC and Si-IGBT in power module and system level at different ambient temperatures. At the same maximum junction temperature 150°C and ambient temperature at 25°C and 80°C, it found that SiC type electrical resistance, maximum endurable current, and voltage could be better than the IGBT type power module above 20%. On the other hand, the simulation of three-phase inverter at different switching frequency such as 10kHz, 15kHz, 20kHz, 30kHz and it had been observed that the power loss of SiC inverter are 78% less for 10kHz switching frequency; 82% less for switching frequency at 15kHz; 85% less for 20kHz of switching frequency; 89% less for switching frequency at 30kHz in the Si-IGBT three-phase SPWM inverter at ambient temperature 80°C.
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