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Journal articles on the topic 'IGBT Switching Loss'

Author: Grafiati

Published: 4 June 2021

Last updated: 8 February 2022

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1

Watanabe, Naoki, Hiroyuki Yoshimoto, Yuki Mori, and Akio Shima. "Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure." Materials Science Forum 963 (July 2019): 660–65. http://dx.doi.org/10.4028/www.scientific.net/msf.963.660.

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6.5-kV SiC IGBT with novel drift layer structure is developed to eliminate collector voltage steepening during turn-off and thus to suppress a ringing noise. The proposed IGBT has a depletion-controlled structure (DCS) of a two-step drift layer to suppress the increase of a depletion layer during the turn-off. We fabricated n-channel SiC IGBTs with DCS designed for a blocking voltage of 6.5 kV. Also, we applied our original backside-grinding-last (BG-last) process that enables low switching loss. The DCS device successfully reduced a riging of the gate voltage and had a turn-off loss of 17.6 m

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2

Singh, Ranbir, Siddarth Sundaresan, Stoyan Jeliazkov, Deepak Veereddy, and Eric Lieser. ">1200 V, >50A SILICON CARBIDE SUPER JUNCTION TRANSISTOR." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (2011): 000104–7. http://dx.doi.org/10.4071/hiten-paper3-rsingh.

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The electrical performance of GeneSiC's 1200 V/7 A SiC Super Junction Transistor (SJT) is compared with three best-in-class commercial Si IGBTs in this paper. Low leakage currents of &lt; 100 μA at 325 °C operating temperature, switching transients &lt; 15 ns at 250 °C, Common Source current gains of 63 and on-resistance as low as 220 mΩ were measured on the SiC SJTs. For switching 7 A, 800 V at 100 kHz, the SiC SJT+GeneSiC SiC Schottky rectifier as Free Wheeling Diode (FWD) achieved a total power loss reduction of about 64% when compared to the best all-Si IGBT+FWD configuration and a

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3

Sundaresan, Siddarth, Brian Grummel, and Ranbir Singh. "Comparison of Energy Losses in High-Current 1700 V Switches." Materials Science Forum 858 (May 2016): 933–36. http://dx.doi.org/10.4028/www.scientific.net/msf.858.933.

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1700 V/20 mΩ SiC Junction Transistors (SJTs) were recently released by GeneSiC with specific on-resistance as low as 2.3 mΩ-cm2, and current gain > 100. This paper benchmarks the electrical characteristics of the 1700 V SJTs against two best-in-class Si IGBTs. The SJT features 47% and 49% lower on-state voltage drops than the two Si IGBTs, respectively, with the SJT operating at 175°C, and the IGBTs at 150°C. The conduction power loss of the best Si IGBT is 2.2 times larger than the SJT at 25°C, and 1.6 times larger at 150°C. The leakage currents measured on the best IGBT at 1700 V and 150°

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4

Hobart, Karl D., Eugene A. Imhoff, Fritz J. Kub, et al. "Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT." Materials Science Forum 717-720 (May 2012): 941–44. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.941.

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The performance of Junction Barrier Schottky (JBS) diodes developed for medium voltage hard-switched Naval power conversion is reported. Nominally 60 A, 4.5kV rated JBS freewheeling diodes were paired with similarly rated Si IGBTs and evaluated for temperature dependent static and dynamic characteristics as well as HTRB and surge capability. The SiC JBS/Si IGBT pair was also directly compared to Si PiN diode/Si IGBT with similar ratings. Compared to Si, the SiC freewheeling diode produced over twenty times lower reverse recovery charge leading to approximately a factor-of-four-reduction in tur

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5

Chakraborty, Avijit, Pradip Kumar Sadhu, Kallol Bhaumik, Palash Pal, and Nitai Pal. "Performance Analysis of High frequency Parallel Quasi Resonant Inverter Based Induction Heating System." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 2 (2016): 447. http://dx.doi.org/10.11591/ijece.v6i2.8034.

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This paper presents the performance analysis of high frequency parallel quasi-resonant converter for domestic induction heating application as well as industrial application. The power semiconductor switch like IGBT is incorporated in this high frequency converter. Parallel Quasi-resonant topology is selected to provide ZVS and ZCS operation during switching conditions to reduce switching losses. Here, IGBT provides better efficiency and faster switching technique. In the proposed topology, a diode is connected across the IGBT ensuring the ZVS operation during turn-ON that enhances the possibi

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6

Ma, Xiao Jun, Zong Min Yang, Chun Guang Liu, and Yu Lin Yan. "Real Time Simulation of Insulated Gate Bipolar Transistor." Applied Mechanics and Materials 299 (February 2013): 75–78. http://dx.doi.org/10.4028/www.scientific.net/amm.299.75.

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The voltage spike, current spike and power loss in switching process is important factors in reliability of insulated gate bipolar transistor (IGBT). The real time simulation of IGBT is studied in this paper, taking the basic cell of IGBT power electronic circuit as an example. The function model of IGBT for real time simulation is built by piecewise interpolation method, in which the parameters are get from the datasheet. The real time simulation of IGBT is realized in field programmable gate array (FPGA), and the results can reflect the key performances of switching process.

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7

Imaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, et al. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." Materials Science Forum 527-529 (October 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.

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Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of S

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8

Bazzi, Ali M., Philip T. Krein, Jonathan W. Kimball, and Kevin Kepley. "IGBT and Diode Loss Estimation Under Hysteresis Switching." IEEE Transactions on Power Electronics 27, no. 3 (2012): 1044–48. http://dx.doi.org/10.1109/tpel.2011.2164267.

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9

Wang, Baochao, Shili Dong, Shanlin Jiang, et al. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs." Energies 12, no. 6 (2019): 1146. http://dx.doi.org/10.3390/en12061146.

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The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic character

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10

Lee, Heng, Chun Kai Liu, and Tao Chih Chang. "The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter." Materials Science Forum 1004 (July 2020): 1045–53. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1045.

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This paper focuses on how to define and integrate the system level and power module level with optimal conditions in SiC and Si-IGBT. To investigate the above situation, we compare the performance of SiC and Si-IGBT in power module and system level at different ambient temperatures. At the same maximum junction temperature 150°C and ambient temperature at 25°C and 80°C, it found that SiC type electrical resistance, maximum endurable current, and voltage could be better than the IGBT type power module above 20%. On the other hand, the simulation of three-phase inverter at different switching fr

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11

Ma, Lan, Hongbing Xu, Alex Huang, Jianxiao Zou, and Kai Li. "IGBT Dynamic Loss Reduction through Device Level Soft Switching." Energies 11, no. 5 (2018): 1182. http://dx.doi.org/10.3390/en11051182.

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12

Li, Yu Zhu, Wei Jiang Ni, Zhe Yang Li, Yun Li, Chen Chen, and Xiao Jian Chen. "600V-30A 4H-SiC JBS and Si IGBT Hybrid Module." Materials Science Forum 679-680 (March 2011): 714–17. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.714.

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600V-30A 4H-SiC Junction Barrier Schottky（JBS）diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module，and switching measurements were done at 125°C. As free-wheeling diode for Si IGBT, 600V SiC JBS diode was compared to 600V ultra-fast diode from International Rectifier. SiC diode achieved 90% recovery loss reduction and corresponding IGBT showed 30% lower turn-on loss. However, SiC JBS diode has larger on-state voltage drop due to small chip area. On-state power loss will be lowered by increasing SiC chip area.

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13

Liu, Xian Zheng, Rui Jin, Kun Shan Yu, et al. "Dissipation Analysis of IGBT Module in FB-ZVZCS-PWM Converter." Applied Mechanics and Materials 433-435 (October 2013): 1347–54. http://dx.doi.org/10.4028/www.scientific.net/amm.433-435.1347.

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Along with the government and market take more and more attention to the energy efficiency of power supply, the loss of IGBT module, as the core device, has become a hot topic. Firstly, the dynamic process of IGBT module is analyzed, an accurate and an estimation method of loss calculate are provided, then the working process and resonant process of phase shift full-bridge soft switching converter is discussed, and constitute of IGBT module loss in the circuit is analyzed. Finally the loss is calculated in the 350A inverter welder example, and a conclusion of reliability and proposal for desig

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14

Yang, Yi Wei, Bo Zhou, Jia Dan Wei, and Ming Ming Shi. "Power Loss Analysis of Matrix Converter Based on RB-IGBT." Advanced Materials Research 433-440 (January 2012): 5512–20. http://dx.doi.org/10.4028/www.scientific.net/amr.433-440.5512.

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The power loss analysis of matrix converter based on RB-IGBT is discussed in this paper. The on-state performance and switching process of RB-IGBT are tested; the on-state curve is obtained by the mathematical fit of the experimental data; On the basis, a method of power loss calculation for matrix converter under the input line-to-line voltage control strategy and four-step commutation strategy is investigated; Finally, the simulation result obtained by MATLAB/Simulink verifies the correctness and validity of the proposed method.

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15

Zhai, Xuebing, Tong Yang, Ruliang Zhang, and Jiang Du. "Characteristics investigation on 4.5kV IGBT with partially narrow mesa and split-gate." E3S Web of Conferences 300 (2021): 01012. http://dx.doi.org/10.1051/e3sconf/202130001012.

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Low on-state voltage and low turn-off loss are key issues for IGBT used in HVDC and FACTS. Partial narrow mesa was introduced to improve emitter side contact resistance of IGBT based on Nakagawa limit assumption. However, turn-off loss increases and short circuit sustainability get worse. Split gate separates gate electrode from drift region and reduces gate-collector capacitance to lower turn-off energy loss. Combination partial narrow mesa with split gate can get better gate performance and turn-off characteristics in 4.5kV IGBT. Simulated results with TCAD show proposed models improves swit

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16

Seock Lee, Hae, Geon Hee Lee, Byoung Sup Ahn, and Ey Goo Kang. "A Study on the Electric Characteristics of the Trench Gate Field Stop Insulated Gate Bipolar Transistor Through Two-Step Field Stop." Journal of Nanoelectronics and Optoelectronics 16, no. 5 (2021): 762–65. http://dx.doi.org/10.1166/jno.2021.3005.

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Insulated gate bipolar transistor (IGBT) element is an electrically conductive device with Bipolar junction transistor (BJT) output and Metal Oxide Silicon Field Effect Transistor (MOSFET) input. The IGBTs is a power semiconductor device that aims for high breakdown voltage, low on-state voltage, fast switching and reliability. This paper is, the experiment was conducted with a two-step field stop, IGBT instead of a traditional one step field stop. In order to minimize the energy loss caused by the trade-off relationship between breakdown voltage and the on-state voltage drop, the experiment w

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17

Xie, Yi, and Wen Guang Luo. "A New Kind of Asymmetric DC-DC Converter for Vehicle." Applied Mechanics and Materials 392 (September 2013): 431–34. http://dx.doi.org/10.4028/www.scientific.net/amm.392.431.

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This paper presents the design of a new bi-directional DC-DC converter topology, which solves the problem that the IGBT current stress. The DC-DC converter uses soft-switching technology. By adopting the suggested method, the voltage stress and the switching loss of the IGBT can be reduced considerably. Moreover, the topology is very simple, we can analyze and build the topology electric circuit very easily. Finally, this paper uses Simulink module of Matlab software to simulate the process, and shows the experimental result. And the result shows us the DC-DC converter has great efficiency.

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18

Skibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.

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This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits

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19

Zhai, Mingjing, Yuan Yang, Yang Wen, Wenqing Yao, and Yuan Li. "Characterization analysis and gate driver design for 1200 V 10 A SiC MOSFET." Modern Physics Letters B 32, no. 34n36 (2018): 1840080. http://dx.doi.org/10.1142/s0217984918400808.

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Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) can work at high switching frequency with low switching loss compared with Si insulated gate bipolar transistor (IGBT). Although Si IGBT and SiC MOSFET have the same MOS-gate structure, the transient characteristics and the gate driver requirements for Si IGBT and SiC MOSFET are different. In order to fully utilize the advantages of SiC MOSFET, the gate driver of SiC MOSFET needs to be optimized to meet some special driving requirements. The paper aims to analyze the characteristics for the new generation of wide

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20

Tang, Guan Nan, Xiao Yan Tang, Qing Wen Song, Yi Meng Zhang, Yi Men Zhang, and Yu Ming Zhang. "Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region." Materials Science Forum 924 (June 2018): 645–48. http://dx.doi.org/10.4028/www.scientific.net/msf.924.645.

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This paper proposes a new N-type 4H-SiC extraction-enhanced vertical insulated-gate bipolar transistor (E2VIGBT), which uses a partial Schottky contact to the collector region bottom surface as a carrier extractor to enhance the carrier extraction, so that the switching performance will be improved. TCAD simulation shows that, at an operation frequency of 250 kHz, the E2VIGBT offers a turn-off loss decrease of 69.2% and a total energy loss in a single period reduction of 34.4% when compared with conventional field-stop 4H-SiC IGBTs. With further specific optimization, the proposed structure co

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21

Soomro, Dur Muhammad, Sager K. Alswed, Mohd Noor Abdullah, Nur Hanis Mohammad Radzi, and Mazhar Hussain Baloch. "Optimal design of a single-phase APF based on PQ theory." International Journal of Power Electronics and Drive Systems (IJPEDS) 11, no. 3 (2020): 1360. http://dx.doi.org/10.11591/ijpeds.v11.i3.pp1360-1367.

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The instantaneous active and reactive power (PQ) theory is one of the most widely used control theory for shunt active power filter (SAPF), which can be implemented in single-phase and three-phase systems. However, the SAPF with PQ theory still had ability to improve to become more efficient. This paper presents the optimal design of a single-phase SAPF in terms of reducing the current harmonic distortion and power loss in voltage source inverter (VSI) controlled with the semiconductor switching devices IGBT, MOSFET and Hybrid (combination of IGBT and MOSFET). In order to reduce the switching

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22

Miyake, Masataka, Fumiya Ueno, Dondee Navarro, and Mitiko Miura-Mattausch. "Compact Modeling of the Punch-Through Effect in SiC-IGBT for 6.6kV Switching Operation with Improved Performance." Materials Science Forum 740-742 (January 2013): 1103–6. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1103.

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We developed a compact model of SiC-IGBT for circuit simulation of power conversion systems under 6.6kV / 100A/cm2 bias operation at a few hundred Hz switching frequency. The model includes punch-through effects occurring at the base/buffer surface of the base region. The model allows accurate prediction of switching waveforms and energy loss improvement caused by the punch-through effect (PT-effect).

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23

Bhalla, A., J. Gladish, and G. Dolny. "Effect of IGBT switching dynamics on loss calculations in high speed applications." IEEE Electron Device Letters 20, no. 1 (1999): 51–53. http://dx.doi.org/10.1109/55.737571.

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24

Kaku, B., I. Miyashita, and S. Sone. "Switching loss minimised space vector PWM method for IGBT three-level inverter." IEE Proceedings - Electric Power Applications 144, no. 3 (1997): 182. http://dx.doi.org/10.1049/ip-epa:19970989.

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25

Watanabe, Naoki, Hiroyuki Yoshimoto, Akio Shima, Renichi Yamada, and Yasuhiro Shimamoto. "6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer." Materials Science Forum 858 (May 2016): 939–44. http://dx.doi.org/10.4028/www.scientific.net/msf.858.939.

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Thin drift layers were used to realize n-channel 4H-SiC IGBTs with an extremely low switching loss. The thickness of a drift layer was 60 μm, which was designed for a blocking voltage of 6.5 kV. An on-voltage of 5.4 V was obtained at a collector current of 100 A/cm2 and the specific differential on-resistance at 100 A/cm2 was 20 mΩcm2 at room temperature, indicating proper bipolar operation. A switching evaluation of the SiC IGBTs was performed with a bus voltage of 3.6 kV and a load current of 10 A, and a turn-off loss of 1.2 mJ was obtained. This turn-off loss is very small compared to the v

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26

Dimitrov, Borislav, Khaled Hayatleh, Steve Barker, Gordana Collier, Suleiman Sharkh, and Andrew Cruden. "A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles." Electronics 9, no. 3 (2020): 397. http://dx.doi.org/10.3390/electronics9030397.

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A transformer-less Buck-Boost direct current–direct current (DC–DC) converter in use for the fast charge of electric vehicles, based on powerful high-voltage isolated gate bipolar transistor (IGBT) modules is analyzed, designed and experimentally verified. The main advantages of this topology are: simple structure on the converter’s power stage; a wide range of the output voltage, capable of supporting contemporary vehicles’ on-board battery packs; efficiency; and power density accepted to be high enough for such a class of hard-switched converters. A precise estimation of the loss, dissipated

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27

Liu, Bo-Ying, Gao-Sheng Wang, Ming-Lang Tseng, Kuo-Jui Wu, and Zhi-Gang Li. "Exploring the Electro-Thermal Parameters of Reliable Power Modules: Insulated Gate Bipolar Transistor Junction and Case Temperature." Energies 11, no. 9 (2018): 2371. http://dx.doi.org/10.3390/en11092371.

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In the exploration of new energy sources and the search for a path to sustainable development the reliable operation of wind turbines is of great importance to the stability of power systems. To ensure the stable and reliable operation of the Insulated Gate Bipolar Transistor (IGBT) power module, in this work the influence of changes with aging of different electro-thermal parameters on the junction temperature and the case temperature was studied. Firstly, power thermal cycling tests were performed on the IGBT power module, and the I-V characteristic curve, switching loss and transient therma

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28

Sundaresan, Siddarth G., Charles Sturdevant, H. Issa, Madhuri Marripelly, Eric Lieser, and R. Singh. "Hybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses." Materials Science Forum 717-720 (May 2012): 945–48. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.945.

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Novel device design and process innovations made at GeneSiC on SiC JBS rectifiers result in a significant increase in surge current capability with a 33% decrease in power dissipation at 10x rated current. On the 1200 V-class rectifiers, a clear signature of avalanche-limited breakdown with ultra-low leakage currents is observed at temperatures as high as 240 °C. Almost temperature independent Schottky barrier heights of 1.2 eV and ideality factors 2K2 (for 4H-SiC) is directly extracted from the forward I-V characteristics. When compared with an off-the-shelf all-Si IGBT power co-pack, GeneSiC

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29

Wei, Jie, Sen Zhang, Xiaorong Luo, Diao Fan, and Bo Zhang. "Low Switching Loss and EMI Noise IGBT With Self-Adaptive Hole-Extracting Path." IEEE Transactions on Electron Devices 68, no. 5 (2021): 2572–76. http://dx.doi.org/10.1109/ted.2021.3065898.

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30

Xu, Shi-Zhou, and Feng-You He. "Improvement of High-Power Three-Level Explosion-Proof Inverters Using Soft Switching Control Based on Optimized Power-Loss Algorithm." Journal of Electrical and Computer Engineering 2015 (2015): 1–14. http://dx.doi.org/10.1155/2015/571209.

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The high-power three-level explosion-proof inverters demand high thermal stability of power devices, and a set of theories and methods is needed to achieve an accurate power-loss calculation of power devices, to establish heat dissipation model, and ultimately to reduce the power loss to improve thermal stability of system. In this paper, the principle of neutral point clamped three-level (NPC3L) inverter is elaborated firstly, and a fourth-order RC equivalent circuit of IGBT is derived, on which basis the power-loss model of IGBT and the optimized maternal power-loss thermal model, using an o

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31

Yin, Shan, Yingzhe Wu, Yitao Liu, and Xuewei Pan. "Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT." Energies 12, no. 23 (2019): 4546. http://dx.doi.org/10.3390/en12234546.

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Short-circuit faults are the most critical failure mechanism in power converters. Among the various short-circuit protection schemes, desaturation protection is the most mature and widely used solution. Due to the lack of gate driver integrated circuit (IC) with desaturation protection for the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), the conventional insulated gate bipolar transistor (IGBT) driver IC is normally used as these two devices have similar gate structure and driving mechanism. In this work, a gate driver with desaturation protection is design

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32

Zhao, Jianfei, Changjiu Kong, Tingzhang Liu, and Ruihua Li. "Research on an Auto-Optimized Capacitor Voltage Balancing Control Strategy of MMC SM for Renewable Energy HVDC Transmission System." Electronics 8, no. 1 (2019): 104. http://dx.doi.org/10.3390/electronics8010104.

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The Modular Multilevel Converter (MMC) is one of the most attractive converter topologies in the High Voltage Direct Current (HVDC) transmission field. The latest widely used sorting method has a low algorithm complexity. It can effectively balance the sub-module (SM) capacitor voltages, but it would cause relatively high switching frequency and power loss. Aiming at the problem that the sub-module (SM) capacitor voltage sorting algorithm has a large switching loss due to the high switching frequency of the device, this paper proposes an auto-optimized capacitor voltage balancing control strat

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33

Ivakhno, Volodymyr, Volodymyr V. Zamaruiev, and Olga Ilina. "Estimation of Semiconductor Switching Losses under Hard Switching using Matlab/Simulink Subsystem." Electrical, Control and Communication Engineering 2, no. 1 (2013): 20–26. http://dx.doi.org/10.2478/ecce-2013-0003.

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AbstractThe conventional tools for the system level simulation of the switch-mode power converters (for example, MATLAB/SIMILINK) allow simulating the behavior of a power converter jointly operating with the control system in a closed automatic regulation system. This simulation tools either represent semiconductor devices as ideal switches or implement the simplest models based on volt-ampere characteristics of standard types of semiconductor devices for conducting loss estimation. This fact makes direct calculation of dynamic power losses in the semiconductor devices impossible. The MATLAB/S

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34

Zhang, Fei, Lina Shi, Wen Yu, Chengfang Li, and Xiaowei Sun. "Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT." Microelectronics Journal 37, no. 7 (2006): 569–73. http://dx.doi.org/10.1016/j.mejo.2005.09.005.

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35

Li, Xin Wei. "Design of Soft-Switching Control Circuits in Vibrating Screen Invert Power Source." Applied Mechanics and Materials 494-495 (February 2014): 1448–51. http://dx.doi.org/10.4028/www.scientific.net/amm.494-495.1448.

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A new control system of vibrating screen invert power source was designed according to the question of step regulation of current and power in vibrating screen in the use of MCU. Zero-voltage switching inverter is used to reduce the loss of switching devices in the main circuit and MSP430 MCU is the core of the control circuit. A PI voltage regular with a filter and a feedback type, IGBT over-voltage protection circuit and PWM pulse generating and drive circuit are designed. Experimental results show that the inverter power has high precision, fast response, and anti-interference ability, and

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36

Bašić, Mateo, Dinko Vukadinović, and Miljenko Polić. "Analysis of Power Converter Losses in Vector Control System of a Self–Excited Induction Generator." Journal of Electrical Engineering 65, no. 2 (2014): 65–74. http://dx.doi.org/10.2478/jee-2014-0010.

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Abstract This paper provides analysis of losses in the hysteresis-driven three-phase power converter with IGBTs and free-wheeling diodes. The converter under consideration is part of the self-excited induction generator (SEIG) vector control system. For the analysis, the SEIG vector control system is used in which the induction generator iron losses are taken into account. The power converter losses are determined by using a suitable loss estimation algorithm reported in literature. The chosen algorithm allows the power converter losses to be determined both by type (switching/conduction losse

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Xie, Yi, and Wen Guang Luo. "A New Kind of Bi-Directional Three-Port DC-DC Converter for Vehicle." Applied Mechanics and Materials 341-342 (July 2013): 1043–47. http://dx.doi.org/10.4028/www.scientific.net/amm.341-342.1043.

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This paper presents the design of a new bi-directional DC-DC converter topology, which solves the problem that electric vehicle could not run consistently both in time and distance. This DC-DC converter topology has three ports, each of which can transmit electric power to another port independently, By adopting the suggested method, the running time of the electric vehicle can be extended. Moreover, the topology uses phase shift control, indicating that the IGBT can be achieved by soft-switching technology. It enables us to reduces the current stress and switching loss considerably. Finally,

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Kitabatake, Makoto, M. Tagome, S. Kazama, et al. "Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter." Materials Science Forum 600-603 (September 2008): 913–18. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.913.

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Large (3.6 x 3.6 mm2) chips of the SiC DACFET were fabricated and mounted in TO220 packages. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1400V. The SiC DACFET keeps the normally-off characteristics even at 150°C. Ron and specific Ron of the SiC DACFET is measured to be 62mΩ and 6.7 mΩcm2 at RT while those at 150°C change to 107 mΩ and 11.6 mΩcm2. The 400V / 3 kW DC-DC switched-mode power-conversion circuit with 100kHz switching was fabricated using the SiC DACFET and the SiC SBD. The turn-off switching loss reduces dramatically using the Si

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Palanisamy, R., A. Velu, K. Selvakumar, D. Karthikeyan, D. Selvabharathi, and S. Vidyasagar. "A Sub-Region Based Space Vector Modulation Scheme for Dual 2-Level Inverter System." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 6 (2018): 4902. http://dx.doi.org/10.11591/ijece.v8i6.pp4902-4911.

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This paper deals the implementation of 3-level output voltage using dual 2-level inverter with control of sub-region based Space Vector Modulation (SR-SVM). Switching loss and voltage stress are the most important issues in multilevel inverters, for keep away from these problems dual inverter system executed. Using this proposed system, the conventional 3-level inverter voltage vectors and switching vectors can be located. In neutral point clamped multilevel inverter, it carries more load current fluctuations due to the DC link capacitors and it requires large capacitors. Based on the sub-regi

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Hafezi, Hossein, and Roberto Faranda. "A New Approach for Power Losses Evaluation of IGBT/Diode Module." Electronics 10, no. 3 (2021): 280. http://dx.doi.org/10.3390/electronics10030280.

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Electric power systems are facing tremendous changes and power electronic devices are playing an increasingly crucial role in this transformation. In this contest, the study of power electronic devices behavior becomes of the utmost importance, and in particular, evaluation of their losses to understand their performance. Several methods can be found in literature to evaluate power or energy losses, but each of them is associated with shortcomings (such as missing an important factor or having narrow current or voltage range) that in practice become a strong limit to implement them or in a sim

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Huang, Jun, Haimeng Huang, Xinjiang Lyu, and Xing Bi Chen. "Simulation Study of a Low Switching Loss FD-IGBT With High $dI/dt$ and $dV/dt$ Controllability." IEEE Transactions on Electron Devices 65, no. 12 (2018): 5545–48. http://dx.doi.org/10.1109/ted.2018.2873598.

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Feng, Hao, Wentao Yang, and Johnny K. O. Sin. "A Low Recovery Loss Reverse-Conducting IGBT with Metal/P-body Schottky Junctions for Hard-Switching Applications." ECS Journal of Solid State Science and Technology 5, no. 2 (2015): Q61—Q67. http://dx.doi.org/10.1149/2.0291602jss.

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Xu, Yanming, Carl Ngai Man Ho, Avishek Ghosh, and Dharshana Muthumuni. "An Electrical Transient Model of IGBT-Diode Switching Cell for Power Semiconductor Loss Estimation in Electromagnetic Transient Simulation." IEEE Transactions on Power Electronics 35, no. 3 (2020): 2979–89. http://dx.doi.org/10.1109/tpel.2019.2929113.

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Xu, Yanming, Carl Ngai Man Ho, Avishek Ghosh, and Dharshana Muthumuni. "Generalized Behavioral Modelling Methodology of Switch-Diode Cell for Power Loss Prediction in Electromagnetic Transient Simulation." Energies 14, no. 5 (2021): 1500. http://dx.doi.org/10.3390/en14051500.

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Modern wide-bandgap (WBG) devices, such as silicon carbide (SiC) or gallium nitride (GaN) based devices, have emerged and been increasingly used in power electronics (PE) applications due to their superior switching feature. The power losses of these devices become the key of system efficiency improvement, especially for high-frequency applications. In this paper, a generalized behavioral model of a switch-diode cell (SDC) is proposed for power loss estimation in the electromagnetic transient simulation. The proposed model is developed based on the circuit level switching process analysis, whi

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Das, Subhas Chandra, G. Narayanan, and Arvind Tiwari. "Experimental study on the influence of junction temperature on the relationship between IGBT switching energy loss and device current." Microelectronics Reliability 80 (January 2018): 134–43. http://dx.doi.org/10.1016/j.microrel.2017.11.023.

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Du, Yu Jie, Jin Yuan Li, Peng Wang, and Mei Ting Cui. "Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance." Materials Science Forum 954 (May 2019): 194–201. http://dx.doi.org/10.4028/www.scientific.net/msf.954.194.

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Silicon carbide (SiC) devices have been gradually applied in power electronic for the characteristics of high voltage, high power densities, elevated operating temperature and low switching energy loss. In this paper, a SiC MOSFET welding power module is proposed based on high voltage Si IGBT standard module structure to evaluate the thermal performance. The thermal lateral spread model expounds the expansion of the heat flow in the vertical crossing of a thermal conductor, and thermal resistance distributions of packaging materials in Silicon carbide and Silicon power module are studied throu

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Zhao, Zhiqin, and Xiaoqiong He. "Research on Digital Synchronous Rectification for a High-Efficiency DC-DC Converter in an Auxiliary Power Supply System of Magnetic Levitation." Energies 13, no. 1 (2019): 51. http://dx.doi.org/10.3390/en13010051.

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In this paper, a new auxiliary power supply system of magnetic levitation based on the LLC DC-DC converter is proposed. The switches of the DC-DC converter are SiC MOSFET, which enables high frequency, high temperature, and high power density. For further improving the efficiency of the system and realizing the stability of the output voltage under different load conditions, the digital synchronous rectification (DSR) based on the phase shift control strategy is proposed. The prototype of the LLC DC-DC converter based on SiC MOSFET is implemented, which can realize zero voltage switching (ZVS)

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Hu, Jun, Larry X. Li, Petre Alexandrov, Xiao Hui Wang, and Jian Hui Zhao. "5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application." Materials Science Forum 600-603 (September 2008): 947–50. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.947.

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4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. The JBS diodes based on a 45μm thick, 1.4×1015cm-3 doped drift layer with multiple non-uniform spacing guard ring edge termination showed a blocking voltage of over 5kV. The 5kV JBS diode has a forward current density of 108A/cm2 at 3.5V and a specific on resistance (RSP_ON) of 25.2mW·cm2, which is very close to the theoretical RSP_ON of 23.3mΩ·cm2. DC I-V measurement of packaged JBS diodes showed a forward current of 100A at a voltage drop of 4.3V. A half-bridge inverter with a bus voltage up to 2.5kV was used t

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Kundu, Animesh, Aiswarya Balamurali, Philip Korta, K. Lakshmi Varaha Iyer, and Narayan C. Kar. "An Approach for Estimating the Reliability of IGBT Power Modules in Electrified Vehicle Traction Inverters." Vehicles 2, no. 3 (2020): 413–23. http://dx.doi.org/10.3390/vehicles2030022.

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The reliability analysis of traction inverters is of great interest due to the use of new semi-conductor devices and inverter topologies in electric vehicles (EVs). Switching devices in the inverter are the most vulnerable component due to the electrical, thermal and mechanical stresses based on various driving conditions. Accurate stress analysis of power module is imperative for development of compact high-performance inverter designs with enhanced reliability. Therefore, this paper presents an inverter reliability estimation approach using an enhanced power loss model developed considering

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JUNG, YONG-CHAE, and GYU-HYEONG CHO. "Low loss and high speed IGBT gate driver using the reverse current limiting technique of diode recovery for a hard switching inverter." International Journal of Electronics 81, no. 3 (1996): 321–36. http://dx.doi.org/10.1080/002072196136760.

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