Journal articles: 'IGBT Switching Loss'

1

Watanabe, Naoki, Hiroyuki Yoshimoto, Yuki Mori, and Akio Shima. "Improvement of Switching Characteristics in 6.5-kV SiC IGBT with Novel Drift Layer Structure." Materials Science Forum 963 (July 2019): 660–65. http://dx.doi.org/10.4028/www.scientific.net/msf.963.660.

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6.5-kV SiC IGBT with novel drift layer structure is developed to eliminate collector voltage steepening during turn-off and thus to suppress a ringing noise. The proposed IGBT has a depletion-controlled structure (DCS) of a two-step drift layer to suppress the increase of a depletion layer during the turn-off. We fabricated n-channel SiC IGBTs with DCS designed for a blocking voltage of 6.5 kV. Also, we applied our original backside-grinding-last (BG-last) process that enables low switching loss. The DCS device successfully reduced a riging of the gate voltage and had a turn-off loss of 17.6 mJ with 3.6-kV and 32-A switching operation. Although this value is larger than that of the conventional devices (8.8 mJ) due to a tail current, it is still quite low compared with the reported switching loss of SiC IGBTs with the proper switching curves, which is estimated to be 46.1 mJ with the same rated voltage and current.

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Singh, Ranbir, Siddarth Sundaresan, Stoyan Jeliazkov, Deepak Veereddy, and Eric Lieser. ">1200 V, >50A SILICON CARBIDE SUPER JUNCTION TRANSISTOR." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (January 1, 2011): 000104–7. http://dx.doi.org/10.4071/hiten-paper3-rsingh.

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The electrical performance of GeneSiC's 1200 V/7 A SiC Super Junction Transistor (SJT) is compared with three best-in-class commercial Si IGBTs in this paper. Low leakage currents of < 100 μA at 325 °C operating temperature, switching transients < 15 ns at 250 °C, Common Source current gains of 63 and on-resistance as low as 220 mΩ were measured on the SiC SJTs. For switching 7 A, 800 V at 100 kHz, the SiC SJT+GeneSiC SiC Schottky rectifier as Free Wheeling Diode (FWD) achieved a total power loss reduction of about 64% when compared to the best all-Si IGBT+FWD configuration and a power loss reduction of about 47 %, when compared to the best Si IGBT + SiC Schottky FWD.

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Sundaresan, Siddarth, Brian Grummel, and Ranbir Singh. "Comparison of Energy Losses in High-Current 1700 V Switches." Materials Science Forum 858 (May 2016): 933–36. http://dx.doi.org/10.4028/www.scientific.net/msf.858.933.

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1700 V/20 mΩ SiC Junction Transistors (SJTs) were recently released by GeneSiC with specific on-resistance as low as 2.3 mΩ-cm2, and current gain > 100. This paper benchmarks the electrical characteristics of the 1700 V SJTs against two best-in-class Si IGBTs. The SJT features 47% and 49% lower on-state voltage drops than the two Si IGBTs, respectively, with the SJT operating at 175°C, and the IGBTs at 150°C. The conduction power loss of the best Si IGBT is 2.2 times larger than the SJT at 25°C, and 1.6 times larger at 150°C. The leakage currents measured on the best IGBT at 1700 V and 150°C is 0.93 mA, as compared to 200 nA for the SJT at 175°C. As compared to the SJT, 3.6x and 3.3x higher (hard) switching energy losses are measured on the best 1700 V Si IGBT, at 25°C, and 150°C, respectively, when switching at a DC link voltage of 1200 V.

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Hobart, Karl D., Eugene A. Imhoff, Fritz J. Kub, A. R. Hefner, T. H. Duong, J. M. Ortiz-Rodriguez, Sei Hyung Ryu, et al. "Performance of Hybrid 4.5 kV SiC JBS Freewheeling Diode and Si IGBT." Materials Science Forum 717-720 (May 2012): 941–44. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.941.

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The performance of Junction Barrier Schottky (JBS) diodes developed for medium voltage hard-switched Naval power conversion is reported. Nominally 60 A, 4.5kV rated JBS freewheeling diodes were paired with similarly rated Si IGBTs and evaluated for temperature dependent static and dynamic characteristics as well as HTRB and surge capability. The SiC JBS/Si IGBT pair was also directly compared to Si PiN diode/Si IGBT with similar ratings. Compared to Si, the SiC freewheeling diode produced over twenty times lower reverse recovery charge leading to approximately a factor-of-four-reduction in turn-on loss. Alternatively, for equivalent total switching loss, the SiC JBS/Si IGBT hybrid configuration allows for at least a 50% increase in specific switched power density. Reliability testing showed the devices to be robust with zero failures.

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Chakraborty, Avijit, Pradip Kumar Sadhu, Kallol Bhaumik, Palash Pal, and Nitai Pal. "Performance Analysis of High frequency Parallel Quasi Resonant Inverter Based Induction Heating System." International Journal of Electrical and Computer Engineering (IJECE) 6, no. 2 (April 1, 2016): 447. http://dx.doi.org/10.11591/ijece.v6i2.8034.

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This paper presents the performance analysis of high frequency parallel quasi-resonant converter for domestic induction heating application as well as industrial application. The power semiconductor switch like IGBT is incorporated in this high frequency converter. Parallel Quasi-resonant topology is selected to provide ZVS and ZCS operation during switching conditions to reduce switching losses. Here, IGBT provides better efficiency and faster switching technique. In the proposed topology, a diode is connected across the IGBT ensuring the ZVS operation during turn-ON that enhances the possibility of less turn-ON loss. On the other hand, the switching frequency nearly equal to the resonant frequency ensures the ZCS operation of the IGBT during turn-OFF, which also ensures a reduction of turn-OFF loss. As a result, the performance of the induction heating system gets improved. The proposed scheme is analyzed using PSIM software environment.

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Ma, Xiao Jun, Zong Min Yang, Chun Guang Liu, and Yu Lin Yan. "Real Time Simulation of Insulated Gate Bipolar Transistor." Applied Mechanics and Materials 299 (February 2013): 75–78. http://dx.doi.org/10.4028/www.scientific.net/amm.299.75.

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The voltage spike, current spike and power loss in switching process is important factors in reliability of insulated gate bipolar transistor (IGBT). The real time simulation of IGBT is studied in this paper, taking the basic cell of IGBT power electronic circuit as an example. The function model of IGBT for real time simulation is built by piecewise interpolation method, in which the parameters are get from the datasheet. The real time simulation of IGBT is realized in field programmable gate array (FPGA), and the results can reflect the key performances of switching process.

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Imaizumi, Masayuki, Yoichiro Tarui, Shin Ichi Kinouchi, Hiroshi Nakatake, Yukiyasu Nakao, Tomokatsu Watanabe, Keiko Fujihira, Naruhisa Miura, Tetsuya Takami, and Tatsuo Ozeki. "Switching Characteristics of SiC-MOSFET and SBD Power Modules." Materials Science Forum 527-529 (October 2006): 1289–92. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1289.

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Prototype SiC power modules are fabricated using our class 10 A, 1.2 kV SiC-MOSFETs and SiC-SBDs, and their switching characteristics are evaluated using a double pulse method. Switching waveforms show that both overshoot and tail current, which induce power losses, are suppressed markedly compared with conventional Si-IGBT modules with similar ratings. The total switching loss (MOSFET turn-ON loss, turn-OFF loss and SBD recovery loss) of SiC power modules is measured to be about 30% of that of Si-IGBT modules under the generally-used switching condition (di/dt ~250A/μs). The three losses of SiC modules decrease monotonically with a decrease in gate resistance, namely switching speed. The result shows the potential of unipolar device SiC power modules.

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8

Bazzi, Ali M., Philip T. Krein, Jonathan W. Kimball, and Kevin Kepley. "IGBT and Diode Loss Estimation Under Hysteresis Switching." IEEE Transactions on Power Electronics 27, no. 3 (March 2012): 1044–48. http://dx.doi.org/10.1109/tpel.2011.2164267.

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Wang, Baochao, Shili Dong, Shanlin Jiang, Chun He, Jianhui Hu, Hui Ye, and Xuezhen Ding. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs." Energies 12, no. 6 (March 25, 2019): 1146. http://dx.doi.org/10.3390/en12061146.

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The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic characteristics of GaN HEMT are compared with Si-IGBT, including forward and reverse conducting character, and switching time. Then, the elemental switching losses are analyzed based on measured data. Finally, on a complementary buck converter level, the overall efficiency and EMI-related common-mode currents are compared. For the tested conditions, it is found that the GaN HEMT switching loss is much less than for the same power class IGBT. However, it is worth noting that special attention should be paid to reverse conduction losses in the PWM dead time (or dead band) of complementary-modulated converter legs. When migrating from IGBT to GaN, choosing a dead-time and negative gate drive voltage in conventional IGBT manner can make GaN reverse conducting losses high. It is suggested to use 0 V turn-off gate voltage and minimize the GaN dead time in order to make full use of the GaN advantages.

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10

Lee, Heng, Chun Kai Liu, and Tao Chih Chang. "The Study of Comparative Characterization between SiC MOSFET and Si- IGBT for Power Module and Three-Phase SPWM Inverter." Materials Science Forum 1004 (July 2020): 1045–53. http://dx.doi.org/10.4028/www.scientific.net/msf.1004.1045.

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This paper focuses on how to define and integrate the system level and power module level with optimal conditions in SiC and Si-IGBT. To investigate the above situation, we compare the performance of SiC and Si-IGBT in power module and system level at different ambient temperatures. At the same maximum junction temperature 150°C and ambient temperature at 25°C and 80°C, it found that SiC type electrical resistance, maximum endurable current, and voltage could be better than the IGBT type power module above 20%. On the other hand, the simulation of three-phase inverter at different switching frequency such as 10kHz, 15kHz, 20kHz, 30kHz and it had been observed that the power loss of SiC inverter are 78% less for 10kHz switching frequency; 82% less for switching frequency at 15kHz; 85% less for 20kHz of switching frequency; 89% less for switching frequency at 30kHz in the Si-IGBT three-phase SPWM inverter at ambient temperature 80°C.

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11

Ma, Lan, Hongbing Xu, Alex Huang, Jianxiao Zou, and Kai Li. "IGBT Dynamic Loss Reduction through Device Level Soft Switching." Energies 11, no. 5 (May 8, 2018): 1182. http://dx.doi.org/10.3390/en11051182.

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12

Li, Yu Zhu, Wei Jiang Ni, Zhe Yang Li, Yun Li, Chen Chen, and Xiao Jian Chen. "600V-30A 4H-SiC JBS and Si IGBT Hybrid Module." Materials Science Forum 679-680 (March 2011): 714–17. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.714.

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600V-30A 4H-SiC Junction Barrier Schottky（JBS）diodes were designed and fabricated using SiC epitaxy and device technology. SiC JBS diodes were packaged in Si IGBT module，and switching measurements were done at 125°C. As free-wheeling diode for Si IGBT, 600V SiC JBS diode was compared to 600V ultra-fast diode from International Rectifier. SiC diode achieved 90% recovery loss reduction and corresponding IGBT showed 30% lower turn-on loss. However, SiC JBS diode has larger on-state voltage drop due to small chip area. On-state power loss will be lowered by increasing SiC chip area.

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13

Liu, Xian Zheng, Rui Jin, Kun Shan Yu, Li Jun Xie, Hai Long Bao, Yu Zhang, Juan Liu, and Jia Jie Che. "Dissipation Analysis of IGBT Module in FB-ZVZCS-PWM Converter." Applied Mechanics and Materials 433-435 (October 2013): 1347–54. http://dx.doi.org/10.4028/www.scientific.net/amm.433-435.1347.

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Along with the government and market take more and more attention to the energy efficiency of power supply, the loss of IGBT module, as the core device, has become a hot topic. Firstly, the dynamic process of IGBT module is analyzed, an accurate and an estimation method of loss calculate are provided, then the working process and resonant process of phase shift full-bridge soft switching converter is discussed, and constitute of IGBT module loss in the circuit is analyzed. Finally the loss is calculated in the 350A inverter welder example, and a conclusion of reliability and proposal for design are given according to the calculation results.

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14

Yang, Yi Wei, Bo Zhou, Jia Dan Wei, and Ming Ming Shi. "Power Loss Analysis of Matrix Converter Based on RB-IGBT." Advanced Materials Research 433-440 (January 2012): 5512–20. http://dx.doi.org/10.4028/www.scientific.net/amr.433-440.5512.

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The power loss analysis of matrix converter based on RB-IGBT is discussed in this paper. The on-state performance and switching process of RB-IGBT are tested; the on-state curve is obtained by the mathematical fit of the experimental data; On the basis, a method of power loss calculation for matrix converter under the input line-to-line voltage control strategy and four-step commutation strategy is investigated; Finally, the simulation result obtained by MATLAB/Simulink verifies the correctness and validity of the proposed method.

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15

Zhai, Xuebing, Tong Yang, Ruliang Zhang, and Jiang Du. "Characteristics investigation on 4.5kV IGBT with partially narrow mesa and split-gate." E3S Web of Conferences 300 (2021): 01012. http://dx.doi.org/10.1051/e3sconf/202130001012.

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Low on-state voltage and low turn-off loss are key issues for IGBT used in HVDC and FACTS. Partial narrow mesa was introduced to improve emitter side contact resistance of IGBT based on Nakagawa limit assumption. However, turn-off loss increases and short circuit sustainability get worse. Split gate separates gate electrode from drift region and reduces gate-collector capacitance to lower turn-off energy loss. Combination partial narrow mesa with split gate can get better gate performance and turn-off characteristics in 4.5kV IGBT. Simulated results with TCAD show proposed models improves switching loss and gate reliability. By adjusting split gap electric filed, split gate shape has an important effect on turn-on characteristics.

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16

Seock Lee, Hae, Geon Hee Lee, Byoung Sup Ahn, and Ey Goo Kang. "A Study on the Electric Characteristics of the Trench Gate Field Stop Insulated Gate Bipolar Transistor Through Two-Step Field Stop." Journal of Nanoelectronics and Optoelectronics 16, no. 5 (May 1, 2021): 762–65. http://dx.doi.org/10.1166/jno.2021.3005.

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Insulated gate bipolar transistor (IGBT) element is an electrically conductive device with Bipolar junction transistor (BJT) output and Metal Oxide Silicon Field Effect Transistor (MOSFET) input. The IGBTs is a power semiconductor device that aims for high breakdown voltage, low on-state voltage, fast switching and reliability. This paper is, the experiment was conducted with a two-step field stop, IGBT instead of a traditional one step field stop. In order to minimize the energy loss caused by the trade-off relationship between breakdown voltage and the on-state voltage drop, the experiment was conducted by forming a two-step field stop. Through concentration control between steps, breakdown voltage, On-state Voltage drop and turn off time could be adjusted in detail, and efficient characteristic values could be obtained accordingly. Experiments have confirmed that the On state voltage drop and turn-off time, in particular, can be adjusted by small failure voltage loss upon change in the first stage field stop.

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Xie, Yi, and Wen Guang Luo. "A New Kind of Asymmetric DC-DC Converter for Vehicle." Applied Mechanics and Materials 392 (September 2013): 431–34. http://dx.doi.org/10.4028/www.scientific.net/amm.392.431.

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This paper presents the design of a new bi-directional DC-DC converter topology, which solves the problem that the IGBT current stress. The DC-DC converter uses soft-switching technology. By adopting the suggested method, the voltage stress and the switching loss of the IGBT can be reduced considerably. Moreover, the topology is very simple, we can analyze and build the topology electric circuit very easily. Finally, this paper uses Simulink module of Matlab software to simulate the process, and shows the experimental result. And the result shows us the DC-DC converter has great efficiency.

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Skibinski, G., D. Braun, D. Kirschnik, and R. Lukaszewski. "Developments in Hybrid Si – SiC Power Modules." Materials Science Forum 527-529 (October 2006): 1141–47. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1141.

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This paper investigates utilization of silicon carbide (SiC) Schottky power diodes as inverter Free Wheel Diodes (FWD) in a commercially available standard Econopak module also packaged with latest generation low-loss IGBT silicon. Static and switching characteristics of SiC diodes over standard module operating temperature 25 0C to 125 0C (298 0K - 398 0K) are measured. Module Turn-on, Turn-off and conduction losses vs. frequency are calculated and measured for three phase motor drive operation. Measurements are compared to standard modules using all Silicon (Si) IGBT- diode. System benefits justifying the increased SiC diode cost, such as EMI reduction, increased efficiency, reduced magnetic filter volume and reduced cooling requirements at higher allowable switching frequencies is investigated.

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Zhai, Mingjing, Yuan Yang, Yang Wen, Wenqing Yao, and Yuan Li. "Characterization analysis and gate driver design for 1200 V 10 A SiC MOSFET." Modern Physics Letters B 32, no. 34n36 (December 30, 2018): 1840080. http://dx.doi.org/10.1142/s0217984918400808.

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Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET) can work at high switching frequency with low switching loss compared with Si insulated gate bipolar transistor (IGBT). Although Si IGBT and SiC MOSFET have the same MOS-gate structure, the transient characteristics and the gate driver requirements for Si IGBT and SiC MOSFET are different. In order to fully utilize the advantages of SiC MOSFET, the gate driver of SiC MOSFET needs to be optimized to meet some special driving requirements. The paper aims to analyze the characteristics for the new generation of wide band gap semiconductor device SiC MOSFET and proposes a novel gate driver for SiC MOSFET. Meanwhile, the driving protection circuit of SiC MOSFET is also investigated. The performances of the proposed gate driver have been experimentally evaluated by double pulse test (DPT). In addition, the effect of different external capacitors [Formula: see text] and external driving resistances [Formula: see text] on the switch characteristics of SiC MOSFET is analyzed in detail.

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Tang, Guan Nan, Xiao Yan Tang, Qing Wen Song, Yi Meng Zhang, Yi Men Zhang, and Yu Ming Zhang. "Investigation of 4H-SiC Extraction-Enhanced Vertical Insulated-Gate Bipolar Transistor with Lightly Doped Extractor in Collector Region." Materials Science Forum 924 (June 2018): 645–48. http://dx.doi.org/10.4028/www.scientific.net/msf.924.645.

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This paper proposes a new N-type 4H-SiC extraction-enhanced vertical insulated-gate bipolar transistor (E2VIGBT), which uses a partial Schottky contact to the collector region bottom surface as a carrier extractor to enhance the carrier extraction, so that the switching performance will be improved. TCAD simulation shows that, at an operation frequency of 250 kHz, the E2VIGBT offers a turn-off loss decrease of 69.2% and a total energy loss in a single period reduction of 34.4% when compared with conventional field-stop 4H-SiC IGBTs. With further specific optimization, the proposed structure consumes less energy in a much wider frequency range. The simulation results indicate that this new type of IGBT performs better in high frequency applications.

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Soomro, Dur Muhammad, Sager K. Alswed, Mohd Noor Abdullah, Nur Hanis Mohammad Radzi, and Mazhar Hussain Baloch. "Optimal design of a single-phase APF based on PQ theory." International Journal of Power Electronics and Drive Systems (IJPEDS) 11, no. 3 (September 1, 2020): 1360. http://dx.doi.org/10.11591/ijpeds.v11.i3.pp1360-1367.

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The instantaneous active and reactive power (PQ) theory is one of the most widely used control theory for shunt active power filter (SAPF), which can be implemented in single-phase and three-phase systems. However, the SAPF with PQ theory still had ability to improve to become more efficient. This paper presents the optimal design of a single-phase SAPF in terms of reducing the current harmonic distortion and power loss in voltage source inverter (VSI) controlled with the semiconductor switching devices IGBT, MOSFET and Hybrid (combination of IGBT and MOSFET). In order to reduce the switching frequency and power loss of VSI, instead of using single-band hysteresis current controller (HCC), double-band HCC (DHCC) and triple-band HCC (THCC) is used in the SAPF. The designed SAPF is tested with different non-linear loads to verify the results by using MATLAB Simulink.

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22

Miyake, Masataka, Fumiya Ueno, Dondee Navarro, and Mitiko Miura-Mattausch. "Compact Modeling of the Punch-Through Effect in SiC-IGBT for 6.6kV Switching Operation with Improved Performance." Materials Science Forum 740-742 (January 2013): 1103–6. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1103.

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We developed a compact model of SiC-IGBT for circuit simulation of power conversion systems under 6.6kV / 100A/cm2 bias operation at a few hundred Hz switching frequency. The model includes punch-through effects occurring at the base/buffer surface of the base region. The model allows accurate prediction of switching waveforms and energy loss improvement caused by the punch-through effect (PT-effect).

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Bhalla, A., J. Gladish, and G. Dolny. "Effect of IGBT switching dynamics on loss calculations in high speed applications." IEEE Electron Device Letters 20, no. 1 (January 1999): 51–53. http://dx.doi.org/10.1109/55.737571.

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Kaku, B., I. Miyashita, and S. Sone. "Switching loss minimised space vector PWM method for IGBT three-level inverter." IEE Proceedings - Electric Power Applications 144, no. 3 (1997): 182. http://dx.doi.org/10.1049/ip-epa:19970989.

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Watanabe, Naoki, Hiroyuki Yoshimoto, Akio Shima, Renichi Yamada, and Yasuhiro Shimamoto. "6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer." Materials Science Forum 858 (May 2016): 939–44. http://dx.doi.org/10.4028/www.scientific.net/msf.858.939.

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Thin drift layers were used to realize n-channel 4H-SiC IGBTs with an extremely low switching loss. The thickness of a drift layer was 60 μm, which was designed for a blocking voltage of 6.5 kV. An on-voltage of 5.4 V was obtained at a collector current of 100 A/cm2 and the specific differential on-resistance at 100 A/cm2 was 20 mΩcm2 at room temperature, indicating proper bipolar operation. A switching evaluation of the SiC IGBTs was performed with a bus voltage of 3.6 kV and a load current of 10 A, and a turn-off loss of 1.2 mJ was obtained. This turn-off loss is very small compared to the values in the current literatures, and was estimated to be an over 80% reduction. The series operation of thin-drift-layer 6.5 kV SiC IGBTs can ensure a lower switching loss than the single operation of higher blocking voltage devices in power conversion systems.

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Dimitrov, Borislav, Khaled Hayatleh, Steve Barker, Gordana Collier, Suleiman Sharkh, and Andrew Cruden. "A Buck-Boost Transformerless DC–DC Converter Based on IGBT Modules for Fast Charge of Electric Vehicles." Electronics 9, no. 3 (February 28, 2020): 397. http://dx.doi.org/10.3390/electronics9030397.

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A transformer-less Buck-Boost direct current–direct current (DC–DC) converter in use for the fast charge of electric vehicles, based on powerful high-voltage isolated gate bipolar transistor (IGBT) modules is analyzed, designed and experimentally verified. The main advantages of this topology are: simple structure on the converter’s power stage; a wide range of the output voltage, capable of supporting contemporary vehicles’ on-board battery packs; efficiency; and power density accepted to be high enough for such a class of hard-switched converters. A precise estimation of the loss, dissipated in the converter’s basic modes of operation Buck, Boost, and Buck-Boost is presented. The analysis shows an approach of loss minimization, based on switching frequency reduction during the Buck-Boost operation mode. Such a technique guarantees stable thermal characteristics during the entire operation, i.e., battery charge cycle. As the Buck-Boost mode takes place when Buck and Boost modes cannot support the output voltage, operating as a combination of them, it can be considered as critically dependent on the characteristics of the semiconductors. With this, the necessary duty cycle and voltage range, determined with respect to the input-output voltages and power losses, require an additional study to be conducted. Additionally, the tolerance of the applied switching frequencies for the most versatile silicon-based powerful IGBT modules is analyzed and experimentally verified. Finally, several important characteristics, such as transients during switch-on and switch-off, IGBTs’ voltage tails, critical duty cycles, etc., are depicted experimentally with oscillograms, obtained by an experimental model.

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Liu, Bo-Ying, Gao-Sheng Wang, Ming-Lang Tseng, Kuo-Jui Wu, and Zhi-Gang Li. "Exploring the Electro-Thermal Parameters of Reliable Power Modules: Insulated Gate Bipolar Transistor Junction and Case Temperature." Energies 11, no. 9 (September 8, 2018): 2371. http://dx.doi.org/10.3390/en11092371.

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In the exploration of new energy sources and the search for a path to sustainable development the reliable operation of wind turbines is of great importance to the stability of power systems. To ensure the stable and reliable operation of the Insulated Gate Bipolar Transistor (IGBT) power module, in this work the influence of changes with aging of different electro-thermal parameters on the junction temperature and the case temperature was studied. Firstly, power thermal cycling tests were performed on the IGBT power module, and the I-V characteristic curve, switching loss and transient thermal impedance are recorded every 1000 power cycles, and then the electrical parameters (saturation voltage drop and switching loss) and the thermal parameters (junction-to-case thermal resistance) of the IGBT are obtained under different aging states. The obtained electro-thermal parameters are substituted into the established electro-thermal coupling model to obtain the junction temperature and the case temperature under different aging states. The degrees of influence of these electro-thermal parameters on the junction temperature and case temperature under different aging states are analyzed by the single variable method. The results show that the changes of the electro-thermal parameters under different aging states affects the junction temperature and the case temperature as follows: (1) Compared with other parameters, the transient thermal impedance has the greatest influence on the junction temperature, which is 60.1%. (2) Compared with other parameters, the switching loss has the greatest influence on the case temperature, which is 79.8%. The result provides a novel method for the junction temperature calculation model and lays a foundation for evaluating the aging state by using the case temperature, which has important theoretical and practical significance for the stable operation of power electronic systems.

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Sundaresan, Siddarth G., Charles Sturdevant, H. Issa, Madhuri Marripelly, Eric Lieser, and R. Singh. "Hybrid Si-IGBT/SiC Rectifier Co-Packs and SiC JBS Rectifiers Offering Superior Surge Current Capability and Reduced Power Losses." Materials Science Forum 717-720 (May 2012): 945–48. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.945.

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Novel device design and process innovations made at GeneSiC on SiC JBS rectifiers result in a significant increase in surge current capability with a 33% decrease in power dissipation at 10x rated current. On the 1200 V-class rectifiers, a clear signature of avalanche-limited breakdown with ultra-low leakage currents is observed at temperatures as high as 240 °C. Almost temperature independent Schottky barrier heights of 1.2 eV and ideality factors 2K2 (for 4H-SiC) is directly extracted from the forward I-V characteristics. When compared with an off-the-shelf all-Si IGBT power co-pack, GeneSiC’s GA100XCP12-227 co-pack offers 88% and 47% reduction at 125 °C in the IGBT and free-wheeling diode switching energy losses, respectively. This results in an overall switching loss reduction of about 28% as compared to its silicon counterpart.

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Wei, Jie, Sen Zhang, Xiaorong Luo, Diao Fan, and Bo Zhang. "Low Switching Loss and EMI Noise IGBT With Self-Adaptive Hole-Extracting Path." IEEE Transactions on Electron Devices 68, no. 5 (May 2021): 2572–76. http://dx.doi.org/10.1109/ted.2021.3065898.

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Xu, Shi-Zhou, and Feng-You He. "Improvement of High-Power Three-Level Explosion-Proof Inverters Using Soft Switching Control Based on Optimized Power-Loss Algorithm." Journal of Electrical and Computer Engineering 2015 (2015): 1–14. http://dx.doi.org/10.1155/2015/571209.

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The high-power three-level explosion-proof inverters demand high thermal stability of power devices, and a set of theories and methods is needed to achieve an accurate power-loss calculation of power devices, to establish heat dissipation model, and ultimately to reduce the power loss to improve thermal stability of system. In this paper, the principle of neutral point clamped three-level (NPC3L) inverter is elaborated firstly, and a fourth-order RC equivalent circuit of IGBT is derived, on which basis the power-loss model of IGBT and the optimized maternal power-loss thermal model, using an optimized power-loss algorithm, are established. Secondly, in accordance with the optimized maternal power-loss thermal model, the generic formulas of power-loss calculation are deduced to calculate the power-loss modification values of NPC3L and soft switching three-level (S3L) inverters, which will be the thermal sources during thermal analysis for maternal power-loss thermal models. Finally, the experiment conducted on the 2.1 MW experimental platform shows that S3L inverter has the same excellent output characteristics with NPC3L inverter, reduces the power loss significantly by 213 W in each half-bridge, and decreases the temperature by 10°C, coinciding with the theoretical calculation, which verifies the accuracy of optimized power-loss algorithm and the effectiveness of the improvement.

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Yin, Shan, Yingzhe Wu, Yitao Liu, and Xuewei Pan. "Comparative Design of Gate Drivers with Short-Circuit Protection Scheme for SiC MOSFET and Si IGBT." Energies 12, no. 23 (November 29, 2019): 4546. http://dx.doi.org/10.3390/en12234546.

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Short-circuit faults are the most critical failure mechanism in power converters. Among the various short-circuit protection schemes, desaturation protection is the most mature and widely used solution. Due to the lack of gate driver integrated circuit (IC) with desaturation protection for the silicon carbide (SiC) metal-oxide-semiconductor field-effect transistor (MOSFET), the conventional insulated gate bipolar transistor (IGBT) driver IC is normally used as these two devices have similar gate structure and driving mechanism. In this work, a gate driver with desaturation protection is designed for the 1.2-kV/30-A SiC MOSFET and silicon (Si) IGBT with the off-the-shelf driver IC. To further limit voltage-overshoot at the rapid turn-off transient, the active clamping circuit is introduced. Based on the experiments of switching characterization and short-circuit test, the SiC MOSFET shows faster switching speed, more serious electromagnetic interference (EMI) issue, lower switching loss (half), and higher short-circuit current (1.6 times) than the Si IGBT, even with a slower gate driver. Thus, a rapid response speed is required for the desaturation protection circuit of SiC MOSFET. Due to the long delay time of the existing desaturation protection scheme, it is technically difficult to design a sub- μ s protection circuit. In this work, an external current source is proposed to charge the blanking capacitor. A short-circuit time of 0.91 μ s is achieved with a reliable protection. Additionally, the peak current is reduced by 22%.

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Zhao, Jianfei, Changjiu Kong, Tingzhang Liu, and Ruihua Li. "Research on an Auto-Optimized Capacitor Voltage Balancing Control Strategy of MMC SM for Renewable Energy HVDC Transmission System." Electronics 8, no. 1 (January 18, 2019): 104. http://dx.doi.org/10.3390/electronics8010104.

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The Modular Multilevel Converter (MMC) is one of the most attractive converter topologies in the High Voltage Direct Current (HVDC) transmission field. The latest widely used sorting method has a low algorithm complexity. It can effectively balance the sub-module (SM) capacitor voltages, but it would cause relatively high switching frequency and power loss. Aiming at the problem that the sub-module (SM) capacitor voltage sorting algorithm has a large switching loss due to the high switching frequency of the device, this paper proposes an auto-optimized capacitor voltage balancing control strategy. Firstly, the topology and operation principle of MMC are analyzed. Secondly, a SM capacitor voltage control method based on the dynamic deviation threshold is proposed. Considering the switch switching state of the SM and the difference between the voltages of each SM, the algorithm can obtain the dynamic deviation valve using the closed-loop control. The method can avoid the unnecessary repeated switching of the Insulated Gate Bipolar Transistor (IGBT) under the premise of ensuring that the capacitance voltages of the SMs are basically the same, which effectively result in reducing the switching frequency of the MMC SM and reducing the switching loss, thereby improving the operating efficiency of the system. Finally aiming at the proposed control strategy, the simulation and experimental verification are carried out which shows that the proposed algorithm can better control the system voltage deviation, reduce the switching loss of the system and improve the stability of the system.

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Ivakhno, Volodymyr, Volodymyr V. Zamaruiev, and Olga Ilina. "Estimation of Semiconductor Switching Losses under Hard Switching using Matlab/Simulink Subsystem." Electrical, Control and Communication Engineering 2, no. 1 (April 1, 2013): 20–26. http://dx.doi.org/10.2478/ecce-2013-0003.

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AbstractThe conventional tools for the system level simulation of the switch-mode power converters (for example, MATLAB/SIMILINK) allow simulating the behavior of a power converter jointly operating with the control system in a closed automatic regulation system. This simulation tools either represent semiconductor devices as ideal switches or implement the simplest models based on volt-ampere characteristics of standard types of semiconductor devices for conducting loss estimation. This fact makes direct calculation of dynamic power losses in the semiconductor devices impossible. The MATLAB/SIMILINK subsystem that calculates the average power dissipated in the power switch during turn-on and turn-off transition is proposed in this paper. The represented approach used in the subsystem estimates by the means of MATLAB/SIMILINK the values of turn-on and turn-off energies at power switch commutation instances on the base of switching current and voltage measurements and the values of commutation energies given in datasheet on power switch. The simulation results of step-down converter with IGBT and proposed subsystem in MATLAB/SIMULINK were compared with the calculation results obtained in Semisel

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Zhang, Fei, Lina Shi, Wen Yu, Chengfang Li, and Xiaowei Sun. "Novel buffer engineering: A concept for fast switching and low loss operation of planar IGBT." Microelectronics Journal 37, no. 7 (July 2006): 569–73. http://dx.doi.org/10.1016/j.mejo.2005.09.005.

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Li, Xin Wei. "Design of Soft-Switching Control Circuits in Vibrating Screen Invert Power Source." Applied Mechanics and Materials 494-495 (February 2014): 1448–51. http://dx.doi.org/10.4028/www.scientific.net/amm.494-495.1448.

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A new control system of vibrating screen invert power source was designed according to the question of step regulation of current and power in vibrating screen in the use of MCU. Zero-voltage switching inverter is used to reduce the loss of switching devices in the main circuit and MSP430 MCU is the core of the control circuit. A PI voltage regular with a filter and a feedback type, IGBT over-voltage protection circuit and PWM pulse generating and drive circuit are designed. Experimental results show that the inverter power has high precision, fast response, and anti-interference ability, and the system can obtain better steady state accuracy and dynamic characteristics and greatly improve the efficiency of shaker.

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Bašić, Mateo, Dinko Vukadinović, and Miljenko Polić. "Analysis of Power Converter Losses in Vector Control System of a Self–Excited Induction Generator." Journal of Electrical Engineering 65, no. 2 (March 1, 2014): 65–74. http://dx.doi.org/10.2478/jee-2014-0010.

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Abstract This paper provides analysis of losses in the hysteresis-driven three-phase power converter with IGBTs and free-wheeling diodes. The converter under consideration is part of the self-excited induction generator (SEIG) vector control system. For the analysis, the SEIG vector control system is used in which the induction generator iron losses are taken into account. The power converter losses are determined by using a suitable loss estimation algorithm reported in literature. The chosen algorithm allows the power converter losses to be determined both by type (switching/conduction losses) and by converter component (IGBT/diode losses). The overall power converter losses are determined over wide ranges of rotor speed, dc-link voltage and load resistance, and subsequently used for offline correction of the overall control system’s losses (efficiency) obtained through control system simulations with an ideal power converter. The control system’s efficiency values obtained after the correction are compared with the measured values.

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Xie, Yi, and Wen Guang Luo. "A New Kind of Bi-Directional Three-Port DC-DC Converter for Vehicle." Applied Mechanics and Materials 341-342 (July 2013): 1043–47. http://dx.doi.org/10.4028/www.scientific.net/amm.341-342.1043.

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This paper presents the design of a new bi-directional DC-DC converter topology, which solves the problem that electric vehicle could not run consistently both in time and distance. This DC-DC converter topology has three ports, each of which can transmit electric power to another port independently, By adopting the suggested method, the running time of the electric vehicle can be extended. Moreover, the topology uses phase shift control, indicating that the IGBT can be achieved by soft-switching technology. It enables us to reduces the current stress and switching loss considerably. Finally, this paper uses Simulink module of Matlab to simulate the process, and shows the experimental result. And the result shows us the DC-DC converter has great efficiency.

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Kitabatake, Makoto, M. Tagome, S. Kazama, K. Yamashita, K. Hashimoto, Kunimasa Takahashi, O. Kusumoto, et al. "Normally-Off 1400V/30A 4H-SiC DACFET and its Application to DC-DC Converter." Materials Science Forum 600-603 (September 2008): 913–18. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.913.

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Large (3.6 x 3.6 mm2) chips of the SiC DACFET were fabricated and mounted in TO220 packages. The drain-source avalanche breakdown voltage without any gate bias (Vgs=0V) is measured to be >1400V. The SiC DACFET keeps the normally-off characteristics even at 150°C. Ron and specific Ron of the SiC DACFET is measured to be 62mΩ and 6.7 mΩcm2 at RT while those at 150°C change to 107 mΩ and 11.6 mΩcm2. The 400V / 3 kW DC-DC switched-mode power-conversion circuit with 100kHz switching was fabricated using the SiC DACFET and the SiC SBD. The turn-off switching loss reduces dramatically using the SiC-DACFET down to 77μJ/pulse which is less than 1/10 of that using the Si-IGBT.

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Palanisamy, R., A. Velu, K. Selvakumar, D. Karthikeyan, D. Selvabharathi, and S. Vidyasagar. "A Sub-Region Based Space Vector Modulation Scheme for Dual 2-Level Inverter System." International Journal of Electrical and Computer Engineering (IJECE) 8, no. 6 (December 1, 2018): 4902. http://dx.doi.org/10.11591/ijece.v8i6.pp4902-4911.

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This paper deals the implementation of 3-level output voltage using dual 2-level inverter with control of sub-region based Space Vector Modulation (SR-SVM). Switching loss and voltage stress are the most important issues in multilevel inverters, for keep away from these problems dual inverter system executed. Using this proposed system, the conventional 3-level inverter voltage vectors and switching vectors can be located. In neutral point clamped multilevel inverter, it carries more load current fluctuations due to the DC link capacitors and it requires large capacitors. Based on the sub-region SVM used to control IGBT switches placed in the dual inverter system. The proposed system improves the output voltage with reduced harmonic content with improved dc voltage utilisation. The simulation and hardware results are verified using matlab/simulink and dsPIC microcontroller.

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Hafezi, Hossein, and Roberto Faranda. "A New Approach for Power Losses Evaluation of IGBT/Diode Module." Electronics 10, no. 3 (January 25, 2021): 280. http://dx.doi.org/10.3390/electronics10030280.

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Electric power systems are facing tremendous changes and power electronic devices are playing an increasingly crucial role in this transformation. In this contest, the study of power electronic devices behavior becomes of the utmost importance, and in particular, evaluation of their losses to understand their performance. Several methods can be found in literature to evaluate power or energy losses, but each of them is associated with shortcomings (such as missing an important factor or having narrow current or voltage range) that in practice become a strong limit to implement them or in a simulation process. To overcome this problem, this paper evaluates existing methods and proposes new loss calculation methods for power electronics losses that can be used within simulation tools at any converter configuration and application range, splitting power electronic losses into switching and conduction losses. The proposed new approach formulates each loss calculation procedure in a systematic way. The presented methods are implemented in Matlab Simulink and simulation results are compared with data obtained from the Semikron SemiSel v4 online tool, which is used as a benchmark. The outcomes reveal that, with this new approach, the proposed methods can cover wider working operation range compared to the existing methods having better accuracy.

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Huang, Jun, Haimeng Huang, Xinjiang Lyu, and Xing Bi Chen. "Simulation Study of a Low Switching Loss FD-IGBT With High $dI/dt$ and $dV/dt$ Controllability." IEEE Transactions on Electron Devices 65, no. 12 (December 2018): 5545–48. http://dx.doi.org/10.1109/ted.2018.2873598.

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Feng, Hao, Wentao Yang, and Johnny K. O. Sin. "A Low Recovery Loss Reverse-Conducting IGBT with Metal/P-body Schottky Junctions for Hard-Switching Applications." ECS Journal of Solid State Science and Technology 5, no. 2 (December 5, 2015): Q61—Q67. http://dx.doi.org/10.1149/2.0291602jss.

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Xu, Yanming, Carl Ngai Man Ho, Avishek Ghosh, and Dharshana Muthumuni. "An Electrical Transient Model of IGBT-Diode Switching Cell for Power Semiconductor Loss Estimation in Electromagnetic Transient Simulation." IEEE Transactions on Power Electronics 35, no. 3 (March 2020): 2979–89. http://dx.doi.org/10.1109/tpel.2019.2929113.

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Xu, Yanming, Carl Ngai Man Ho, Avishek Ghosh, and Dharshana Muthumuni. "Generalized Behavioral Modelling Methodology of Switch-Diode Cell for Power Loss Prediction in Electromagnetic Transient Simulation." Energies 14, no. 5 (March 9, 2021): 1500. http://dx.doi.org/10.3390/en14051500.

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Modern wide-bandgap (WBG) devices, such as silicon carbide (SiC) or gallium nitride (GaN) based devices, have emerged and been increasingly used in power electronics (PE) applications due to their superior switching feature. The power losses of these devices become the key of system efficiency improvement, especially for high-frequency applications. In this paper, a generalized behavioral model of a switch-diode cell (SDC) is proposed for power loss estimation in the electromagnetic transient simulation. The proposed model is developed based on the circuit level switching process analysis, which considers the effects of parasitics, the operating temperature, and the interaction of diode and switch. In addition, the transient waveforms of the SDC are simulated by the proposed model using dependent voltage and current sources with passive components. Besides, the approaches of obtaining model parameters from the datasheets are given and the modelling method is applicable to various semiconductors such Si insulated-gate bipolar transistor (IGBT), Si/SiC metal–oxide–semiconductor field-effect transistor (MOSFET), and GaN devices. Further, a multi-dimensional power loss table in a wide range of operating conditions can be obtained with fast speed and reasonable accuracy. The proposed approach is implemented in PSCAD/ Electromagnetic Transients including DC, EMTDC, (v4.6, Winnipeg, MB, Canada) and further verified by the hardware setups including different daughter boards for different devices.

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Das, Subhas Chandra, G. Narayanan, and Arvind Tiwari. "Experimental study on the influence of junction temperature on the relationship between IGBT switching energy loss and device current." Microelectronics Reliability 80 (January 2018): 134–43. http://dx.doi.org/10.1016/j.microrel.2017.11.023.

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Du, Yu Jie, Jin Yuan Li, Peng Wang, and Mei Ting Cui. "Comparison of High Voltage SiC MOSFET and Si IGBT Power Module Thermal Performance." Materials Science Forum 954 (May 2019): 194–201. http://dx.doi.org/10.4028/www.scientific.net/msf.954.194.

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Silicon carbide (SiC) devices have been gradually applied in power electronic for the characteristics of high voltage, high power densities, elevated operating temperature and low switching energy loss. In this paper, a SiC MOSFET welding power module is proposed based on high voltage Si IGBT standard module structure to evaluate the thermal performance. The thermal lateral spread model expounds the expansion of the heat flow in the vertical crossing of a thermal conductor, and thermal resistance distributions of packaging materials in Silicon carbide and Silicon power module are studied through the COMSOL Multiphysics finite element software based on the thermal lateral spread model assumption that minute changes in thermal conductivity would produce no alterations in heat spreading angle. The result indicate that SiC MOSFET module gives the larger thermal resistance than the Si IGBT module with the same encapsulation structure but higher power densities for SiC, what’s more, the solder for die attach and direct bonding copper which include upper copper, substrate and lower copper contribute more thermal resistance in SiC MOSFET module. The differences of thermal Performance in SiC and Si modules can be obtained to benefit us in optimizing SiC MOSFET power module structure design and packaging materials selection.

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Zhao, Zhiqin, and Xiaoqiong He. "Research on Digital Synchronous Rectification for a High-Efficiency DC-DC Converter in an Auxiliary Power Supply System of Magnetic Levitation." Energies 13, no. 1 (December 20, 2019): 51. http://dx.doi.org/10.3390/en13010051.

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In this paper, a new auxiliary power supply system of magnetic levitation based on the LLC DC-DC converter is proposed. The switches of the DC-DC converter are SiC MOSFET, which enables high frequency, high temperature, and high power density. For further improving the efficiency of the system and realizing the stability of the output voltage under different load conditions, the digital synchronous rectification (DSR) based on the phase shift control strategy is proposed. The prototype of the LLC DC-DC converter based on SiC MOSFET is implemented, which can realize zero voltage switching (ZVS) and zero current switching (ZCS). Then, the thermal image of DSR is presented, which proves that the power loss of SiC MOSFET with DSR is relatively low. Additionally, the system efficiency among the Si IGBT, SiC MOSFET, and SiC MOSFET with DSR is analyzed and the prototype demonstrates 98% peak efficiency. Finally, simulations, experiments, and data analysis prove the superiority of the proposed DSR strategy for the new auxiliary power supply system of magnetic levitation.

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Hu, Jun, Larry X. Li, Petre Alexandrov, Xiao Hui Wang, and Jian Hui Zhao. "5 kV, 9.5 A SiC JBS Diodes with Non-Uniform Guard Ring Edge Termination for High Power Switching Application." Materials Science Forum 600-603 (September 2008): 947–50. http://dx.doi.org/10.4028/www.scientific.net/msf.600-603.947.

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4H-SiC Junction Barrier Diodes (JBS) diodes were designed, fabricated and tested. The JBS diodes based on a 45μm thick, 1.4×1015cm-3 doped drift layer with multiple non-uniform spacing guard ring edge termination showed a blocking voltage of over 5kV. The 5kV JBS diode has a forward current density of 108A/cm2 at 3.5V and a specific on resistance (RSP_ON) of 25.2mW·cm2, which is very close to the theoretical RSP_ON of 23.3mΩ·cm2. DC I-V measurement of packaged JBS diodes showed a forward current of 100A at a voltage drop of 4.3V. A half-bridge inverter with a bus voltage up to 2.5kV was used to characterize the high power switching performance of SiC JBS diodes. A large inductance load of 1mH was used to simulate the load of a high power AC induction motor. Compared to a Si PIN diode module, the SiC JBS package reduces diode turn-off energy loss by 30% and Si IGBT turn-on energy loss by 21% at room temperature.

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Kundu, Animesh, Aiswarya Balamurali, Philip Korta, K. Lakshmi Varaha Iyer, and Narayan C. Kar. "An Approach for Estimating the Reliability of IGBT Power Modules in Electrified Vehicle Traction Inverters." Vehicles 2, no. 3 (June 28, 2020): 413–23. http://dx.doi.org/10.3390/vehicles2030022.

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The reliability analysis of traction inverters is of great interest due to the use of new semi-conductor devices and inverter topologies in electric vehicles (EVs). Switching devices in the inverter are the most vulnerable component due to the electrical, thermal and mechanical stresses based on various driving conditions. Accurate stress analysis of power module is imperative for development of compact high-performance inverter designs with enhanced reliability. Therefore, this paper presents an inverter reliability estimation approach using an enhanced power loss model developed considering dynamic and transient influence of power semi-conductors. The temperature variation tracking has been improved by incorporating power module component parameters in an LPTN model of the inverter. A 100 kW EV grade traction inverter is used to validate the developed mathematical models towards estimating the inverter performance and subsequently, predicting the remaining useful lifetime of the inverter against two commonly used drive cycles.

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JUNG, YONG-CHAE, and GYU-HYEONG CHO. "Low loss and high speed IGBT gate driver using the reverse current limiting technique of diode recovery for a hard switching inverter." International Journal of Electronics 81, no. 3 (September 1996): 321–36. http://dx.doi.org/10.1080/002072196136760.

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Journal articles on the topic 'IGBT Switching Loss'

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