Relevant bibliographies by topics / III-V nanostructure

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'III-V nanostructure'

Author: Grafiati
Published: 9 March 2023
Last updated: 31 July 2025

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Journal articles on the topic "III-V nanostructure"

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Florini, Nikoletta, George P. Dimitrakopulos, Joseph Kioseoglou, Nikos T. Pelekanos, and Thomas Kehagias. "Strain field determination in III–V heteroepitaxy coupling finite elements with experimental and theoretical techniques at the nanoscale." Journal of the Mechanical Behavior of Materials 26, no. 1-2 (2017): 1–8. http://dx.doi.org/10.1515/jmbm-2017-0009.

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AbstractWe are briefly reviewing the current status of elastic strain field determination in III–V heteroepitaxial nanostructures, linking finite elements (FE) calculations with quantitative nanoscale imaging and atomistic calculation techniques. III–V semiconductor nanostructure systems of various dimensions are evaluated in terms of their importance in photonic and microelectronic devices. As elastic strain distribution inside nano-heterostructures has a significant impact on the alloy composition, and thus their electronic properties, it is important to accurately map its components both at
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Pantle, Florian, Monika Karlinger, Simon Wörle, et al. "Crystal side facet-tuning of GaN nanowires and nanofins grown by molecular beam epitaxy." Journal of Applied Physics 132, no. 18 (2022): 184304. http://dx.doi.org/10.1063/5.0098016.

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GaN nanostructures are promising for a broad range of applications due to their 3D structure, thereby exposing non-polar crystal surfaces. The nature of the exposed crystal facets, i.e., whether they are a-, m-plane, or of mixed orientation, impacts the stability and performance of GaN nanostructure-based devices. In this context, it is of great interest to control the formation of well-defined side facets. Here, we show that we can control the crystal facet formation at the nanowire sidewalls by tuning the III–V ratio during selective area growth by molecular beam epitaxy. Especially, the N f
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Babicheva, Viktoriia E. "Transition Metal Dichalcogenide Nanoantennas Lattice." MRS Advances 4, no. 41-42 (2019): 2283–88. http://dx.doi.org/10.1557/adv.2019.357.

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ABSTRACTHigh-index materials such as silicon and III-V compounds have recently gained a lot of interest as a promising material platform for efficient photonic nanostructures. Because of the high refractive index, nanoparticles of such materials support Mie resonances and enable efficient light control and its confinement at the nanoscale. Here we propose a design of nanostructure with multipole resonances where optical nanoantennas are made out of transition metal dichalcogenide, in particular, tungsten disulfide WS2. Transition metal dichalcogenide (TMDCs) possess a high refractive index and
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Ishikawa, Tomonori, Shigeru Kohmoto, Tetsuya Nishimura, and Kiyoshi Asakawa. "In situ electron-beam processing for III–V semiconductor nanostructure fabrication." Thin Solid Films 373, no. 1-2 (2000): 170–75. http://dx.doi.org/10.1016/s0040-6090(00)01128-7.

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Magno, R., and B. R. Bennett. "Nanostructure patterns written in III–V semiconductors by an atomic force microscope." Applied Physics Letters 70, no. 14 (1997): 1855–57. http://dx.doi.org/10.1063/1.118712.

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Zhang, Jiarui, and Chi Ma. "Recent Progress and Future Opportunities for Optical Manipulation in Halide Perovskite Photodetectors." Nanomaterials 15, no. 11 (2025): 816. https://doi.org/10.3390/nano15110816.

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Perovskite, as a promising class of photodetection material, demonstrates considerable potential in replacing conventional bulk light-detection materials such as silicon, III–V, or II–VI compound semiconductors and has been widely applied in various special light detection. Relying solely on the intrinsic photoelectric properties of perovskite gradually fails to meet the evolving requirements attributed to the escalating demand for low-cost, lightweight, flexible, and highly integrated photodetection. Direct manipulation of electrons and photons with differentiation of local electronic field t
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Kang, M., J. H. Wu, S. Huang, et al. "Universal mechanism for ion-induced nanostructure formation on III-V compound semiconductor surfaces." Applied Physics Letters 101, no. 8 (2012): 082101. http://dx.doi.org/10.1063/1.4742863.

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Boroditsky, M., I. Gontijo, M. Jackson, et al. "Surface recombination measurements on III–V candidate materials for nanostructure light-emitting diodes." Journal of Applied Physics 87, no. 7 (2000): 3497–504. http://dx.doi.org/10.1063/1.372372.

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Abd-Elkader, Omar H., Abdullah M. Al-Enizi, Shoyebmohamad F. Shaikh, Mohd Ubaidullah, Mohamed O. Abdelkader, and Nasser Y. Mostafa. "Enhancing the Liquefied Petroleum Gas Sensing Sensitivity of Mn-Ferrite with Vanadium Doping." Processes 10, no. 10 (2022): 2012. http://dx.doi.org/10.3390/pr10102012.

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Mn-Ferrite with a nanostructure is a highly valuable material in various technological fields, such as electronics, catalysis, and sensors. The proposed article presents the hydrothermal synthesis of Mn-ferrite doped with V (V) ions. The range of the doping level was from 0.0 to x to 0.20. The fluctuation in tetrahedral and octahedral site occupancies with Fe (III), Mn (II), and V (V) ions was coupled to the variation in unit cell dimensions, saturation magnetization, and LPG sensing sensitivity. The total magnetic moment shows a slow decrease with V-doping up to x = 0.1 (Ms = 51.034 emu/g), t
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Yuan, Xiaoming, Dong Pan, Yijin Zhou, et al. "Selective area epitaxy of III–V nanostructure arrays and networks: Growth, applications, and future directions." Applied Physics Reviews 8, no. 2 (2021): 021302. http://dx.doi.org/10.1063/5.0044706.

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Dissertations / Theses on the topic "III-V nanostructure"

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Gallo, Pascal. "Nanostructure III-V pour l'électronique de spin." Phd thesis, INSA de Toulouse, 2006. http://tel.archives-ouvertes.fr/tel-00134772.

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Parmi toutes les méthodes de confinement des porteurs dans les trois directions de l'espace, la croissance auto organisée de boîtes quantiques semble être la meilleure. La méthode de fabrication de ces nanostructures est l'épitaxie par jets moléculaires ; elle permet l'obtention de cristaux d'une grande qualité, de manière cohérente avec leur environnement. Cette technique d'auto organisation dite de Stranski Krastanov génère cependant des nanostructures de tailles diverses ; le spectre de leur luminescence s'en retrouve élargi, altérant les performances des composants à base de boîtes quantiq
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Molière, Timothée. "Intégration de matériaux III-V sur silicium nanostructuré pour application photovoltaïque." Thesis, Paris 6, 2016. http://www.theses.fr/2016PA066638.

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Depuis plus de 30ans, les chercheurs essaient de combiner le silicium et le GaAs. Le potentiel de l'intégration du GaAs sur Si est en effet considérable pour le remplacement des substrats coûteux de GaAs ou de Ge dans la fabrication de cellules PV, de photodétecteurs, de LED, de lasers…. Il en est de même pour le développement de nouveaux dispositifs opto- et électroniques par l'intégration monolithique de GaAs sur circuit silicium. Des défis majeurs persistant jusqu'à aujourd'hui doivent toutefois être surmontés.Dans le but de surmonter ces difficultés, nous proposons un concept intéressant q
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Molière, Timothée. "Intégration de matériaux III-V sur silicium nanostructuré pour application photovoltaïque." Electronic Thesis or Diss., Paris 6, 2016. http://www.theses.fr/2016PA066638.

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Depuis plus de 30ans, les chercheurs essaient de combiner le silicium et le GaAs. Le potentiel de l'intégration du GaAs sur Si est en effet considérable pour le remplacement des substrats coûteux de GaAs ou de Ge dans la fabrication de cellules PV, de photodétecteurs, de LED, de lasers…. Il en est de même pour le développement de nouveaux dispositifs opto- et électroniques par l'intégration monolithique de GaAs sur circuit silicium. Des défis majeurs persistant jusqu'à aujourd'hui doivent toutefois être surmontés.Dans le but de surmonter ces difficultés, nous proposons un concept intéressant q
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Zhang, Tiantian. "Injection de spin dans des systèmes à base de semiconducteurs III-V en vue de nouveaux composants spintroniques." Thesis, Toulouse, INSA, 2014. http://www.theses.fr/2014ISAT0005/document.

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La spintronique dans les semiconducteurs vise à utiliser le spin de l’électron comme degré de liberté supplémentaire (en plus de la charge électrique) afin de véhiculer l’information, ce qui permettrait la mise au point de composants intégrant de nouvelles fonctionnalités. Ce travail de thèse porte sur deux étapes importantes qui doivent être maîtrisées : l’injection électrique de porteurs polarisés en spin dans les semiconducteurs III-V, et la manipulation du spin de l’électron (par champ magnétique) dans ces matériaux optimisés. Dans un premier temps, la grande efficacité des injecteurs de s
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Verzelen, Olivier. "Interaction électron-phonon LO dans les boîtes quantiques d'InAs/GaAs." Paris 6, 2002. http://www.theses.fr/2002PA066365.

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SCACCABAROZZI, ANDREA. "GaAs/AlGaAs quantum dot intermediate band solar cells." Doctoral thesis, Università degli Studi di Milano-Bicocca, 2013. http://hdl.handle.net/10281/40117.

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This thesis presents my Ph.D. work about quantum dot GaAs/AlGaAs solar cells grown by droplet epitaxy, exploring the potential of this materials system for the realization of intermediate band photovoltaic devices. In the first chapter a general introduction to the field of solar energy is given, outlining the reasons why this research has been performed. The physics of the photovoltaic cell is briefly explained in its most important points, to give the reader clear understanding of what is presented in the following chapters. Intermediate band devices are presented in the second chapter. The
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Grange, Thomas. "Relaxation et décohérence des polarons dans les boîtes quantiques de semi-conducteurs." Phd thesis, Université Pierre et Marie Curie - Paris VI, 2008. http://tel.archives-ouvertes.fr/tel-00333256.

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Cette thèse présente une étude théorique des interactions électron-phonon dans les boîtes quantiques InAs/GaAs, où le régime de couplage fort entre les porteurs confinés dans les boîtes et les phonons optiques a pour conséquence la formation d'états intriqués appelés polarons.<br />Nous prenons tout d'abord en compte le couplage fort entre excitons et phonons optiques afin de calculer l'absorption interbande sous champ magnétique.<br />Nous calculons ensuite le temps de vie des états polarons, dont l'instabilité est due à leur composante phonon. Nous démontrons la nécessité de prendre en compt
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Jaffal, Ali. "Single photon sources emitting in the telecom band based on III-V nanowires monolithically grown on silicon." Thesis, Lyon, 2020. http://www.theses.fr/2020LYSEI019.

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Une source de photons uniques (SPU) dans la bande télécom, épitaxiées sur un substrat de silicium (Si), est le Saint Graal pour réaliser des dispositifs CMOS compatibles pour les technologies de l'information optiques. Pour atteindre cet objectif, nous proposons la croissance monolithique de Boîte Quantiques-Nanofils (BQ-NFs) InAs/InP sur des substrats de silicium par épitaxie par jet moléculaire (EJM) en utilisant la méthode vapeur-liquide-solide (VLS). Au début, nous avons concentré nos efforts sur l'optimisation des conditions de croissance afin d'obtenir une densité de NF ultra-faible sans
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Gallo, Pascal. "Nanostructures III-V pour l'électronique de spin." Toulouse, INSA, 2006. http://eprint.insa-toulouse.fr/archive/00000156/.

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Parmi toutes les méthodes de confinement des porteurs dans les trois directions de l’espace, la croissance auto organisée de boîtes quantiques semble être la meilleure. La méthode de fabrication de ces nanostructures est l’épitaxie par jets moléculaires ; elle permet l’obtention de cristaux d’une grande qualité, de manière cohérente avec leur environnement. Cette technique d’auto organisation dite de Stranski Krastanov génère cependant des nanostructures de tailles diverses ; le spectre de leur luminescence s’en retrouve élargi, altérant les performances des composants à base de boîtes quantiq
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Benallali, Hammouda. "Étude de nanostructures de semiconducteurs II-VI par sonde atomique tomographique." Thesis, Aix-Marseille, 2015. http://www.theses.fr/2015AIXM4324.

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Les nanostructures de semiconducteurs II-VI ont de nombreuses applications en microélectronique, optoélectronique et photonique. Notamment, les boites quantiques II-V peuvent servir de source de photons uniques. Dans cette étude, nous nous sommes intéressés à la caractérisation chimique et structurale des nanostructures de semiconducteurs II-VI (boites quantiques (BQs) auto-organisées, nanofils II-VI et III-V …) par sonde atomique tomographique (SAT). Dans un premier temps, nous avons optimisé les conditions d’analyse des semiconducteurs III-V et II-VI par SAT. Ensuite, nous avons étudié les c
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Books on the topic "III-V nanostructure"

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Li, Jing, and Xiao-Ying Huang. Nanostructured crystals: An unprecedented class of hybrid semiconductors exhibiting structure-induced quantum confinement effect and systematically tunable properties. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.16.

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This article describes the structure-induced quantum confinement effect in nanostructured crystals, a unique class of hybrid semiconductors that incorporate organic and inorganic components into a single-crystal lattice via covalent (coordinative) bonds to form extended one-, two- and three-dimensional network structures. These structures are comprised of subnanometer-sized II-VI semiconductor segments (inorganic component) and amine molecules (organic component) arranged into perfectly ordered arrays. The article first provides an overview of II-VI and III-V semiconductors, II-VI colloidal qu
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Vvedensky, Dimitri D. Quantum dots: Self-organized and self-limiting assembly. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.6.

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This article describes the self-organized and self-limiting assembly of quantum dots, with particular emphasis on III–V semiconductor quantum dots. It begins with a background on the second industrial revolution, highlighted by advances in information technology and which paved the way for the era of ‘quantum nanostructures’. It then considers the science and technology of quantum dots, followed by a discussion on methods of epitaxial growth and fabrication methodologies of semiconductor quantum dots and other supported nanostructures, including molecular beam epitaxy and metalorganic vapor-ph
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Glazov, M. M. Hyperfine Interaction of Electron and Nuclear Spins. Oxford University Press, 2018. http://dx.doi.org/10.1093/oso/9780198807308.003.0004.

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This chapter discusses the key interaction–hyperfine coupling–which underlies most of phenomena in the field of electron and nuclear spin dynamics. This interaction originates from magnetic interaction between the nuclear and electron spins. For conduction band electrons in III–V or II–VI semiconductors, it is reduced to a Fermi contact interaction whose strength is proportional to the probability of finding an electron at the nucleus. A more complex situation is realized for valence band holes where hole Bloch functions vanish at the nuclei. Here the hyperfine interaction is of the dipole–dip
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Book chapters on the topic "III-V nanostructure"

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Yip, Sen Po, Lifan Shen, Edwin Y. B. Pun, and Johnny C. Ho. "Properties Engineering of III–V Nanowires for Electronic Application." In Nanostructure Science and Technology. Springer Singapore, 2018. http://dx.doi.org/10.1007/978-981-13-2367-6_3.

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Pohl, Udo W., Sven Rodt, and Axel Hoffmann. "Optical Properties of III–V Quantum Dots." In Semiconductor Nanostructures. Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-77899-8_14.

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Dubrovskii, Vladimir. "Crystal Structure of III–V Nanowires." In Nucleation Theory and Growth of Nanostructures. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-39660-1_6.

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Tiginyanu, I. M., C. Schwab, A. Sarua, et al. "Optical Characteristics of Nanostructured III-V Compounds." In Frontiers of Nano-Optoelectronic Systems. Springer Netherlands, 2000. http://dx.doi.org/10.1007/978-94-010-0890-7_26.

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Tomioka, Katsuhiro, and Takashi Fukui. "III–V Semiconductor Nanowires on Si by Selective-Area Metal-Organic Vapor Phase Epitaxy." In Semiconductor Nanostructures for Optoelectronic Devices. Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-22480-5_3.

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Joyce, B. A., T. Shitara, J. H. Neave, R. N. Fawcett, and T. Kaneko. "Site-Specific Processes During MBE and MOMBE Growth of III–V Compounds on Singular and Vicinal Surfaces." In Nanostructures and Quantum Effects. Springer Berlin Heidelberg, 1994. http://dx.doi.org/10.1007/978-3-642-79232-8_38.

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Höfling, C., C. Schneider, and A. Forchel. "6.9 Examples of III-V layers and nanostructures with diluted semiconductor materials." In Growth and Structuring. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-540-68357-5_35.

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Launois, H., D. Mailly, Y. Jin, et al. "Fabrication and Quantum Properties of 1D and 0D Nanostructures in III-V Semiconductors." In Science and Engineering of One- and Zero-Dimensional Semiconductors. Springer US, 1990. http://dx.doi.org/10.1007/978-1-4684-5733-9_3.

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Morgenstern, Markus, Jens Wiebe, Felix Marczinowski, and Roland Wiesendanger. "Scanning Tunneling Spectroscopy on III–V Materials: Effects of Dimensionality, Magnetic Field, and Magnetic Impurities." In Quantum Materials, Lateral Semiconductor Nanostructures, Hybrid Systems and Nanocrystals. Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-10553-1_9.

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Ishikawa, Fumitaro, Kazuki Nagashima, Takeshi Yanagida, Robert D. Richards, and Irina A. Buyanova. "Microtexture and Polymorphism Observed During the Molecular-Beam Epitaxial Growth of Group III–V Semiconductor Nanostructures." In Topics in Applied Physics. Springer Nature Singapore, 2024. https://doi.org/10.1007/978-981-96-0266-7_7.

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Conference papers on the topic "III-V nanostructure"

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Fu, L., H. F. Lu, J. Lee, et al. "Nanostructure photovoltaics based on III-V compound semiconductors." In Advanced Optoelectronics for Energy and Environment. OSA, 2013. http://dx.doi.org/10.1364/aoee.2013.asa4a.2.

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Liang, Dong, Yangsen Kang, Yijie Huo, et al. "GaAs thin film nanostructure arrays for III-V solar cell applications." In SPIE OPTO, edited by Ali Adibi, Shawn-Yu Lin, and Axel Scherer. SPIE, 2012. http://dx.doi.org/10.1117/12.909743.

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HEUKEN, M. "NANOSTRUCTURE GROWTH OF III-V COMPOUND SEMICONDUCTOR IN ADVANCED PLANETARY REACTORS®." In Reviews and Short Notes to Nanomeeting '99. WORLD SCIENTIFIC, 1999. http://dx.doi.org/10.1142/9789812817990_0058.

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Cossio, Gabriel, Andre Wibowo, Sudersena Rao Tatavarti, Kimberly Sablon, and Edward T. Yu. "Large Area Nanostructure Integration for Broad-Spectrum, Omnidirectional Antireflection Improvements on Polymer Packaged, Mechanically Flexible, Epitaxial Lift-off III-V Solar Arrays." In 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). IEEE, 2018. http://dx.doi.org/10.1109/pvsc.2018.8548006.

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Cossio, Gabriel, Jihwan Lee, Gautham Ragunathan, et al. "Large Area Nanostructure Integration for Broad-Spectrum, Omnidirectional Antireflection Improvements on Polymer Packaged, Mechanically Flexible, Epitaxial Lift-Off III-V Solar Cells." In 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366676.

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O’Neil, Chad B., Ajay P. Malshe, Kumar Virwani, and William F. Schmidt. "Design Consideration, Process and Mechanical Modeling, and Tolerance Analysis of MEMS-Based Mechanical System-on-a-Chip (SOAC) for Nanomanufacturing." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-39381.

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In this paper the authors describe the design considerations including force and tolerance analysis and mechanism and tip design, for a novel, dynamic scanning probe microscopy tip directly insertable into today’s existing atomic force microscopy tools. This tool is the first of its kind and is a major step in the field of nanomanufacturing enabling the use of nanomechanical machining operations for nanostructure top-down manufacturing. The application of this device is the nanomechanical drilling and milling of III-V semiconductor substrates for various applications such as nanovias for elect
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Fukui, Takashi, Eiji Nakai, MuYi Chen, and Katsuhiro Tomioka. "III-V Compound Semiconductor Nanowire Solar Cells." In Optical Nanostructures and Advanced Materials for Photovoltaics. OSA, 2014. http://dx.doi.org/10.1364/pv.2014.pw3c.2.

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Vyas, Kaustubh, and Ksenia Dolgaleva. "Challenges associated with fabrication of III-V integrated optical nanostructures for nonlinear optics." In Nonlinear Photonics. Optica Publishing Group, 2022. http://dx.doi.org/10.1364/np.2022.npth2f.3.

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III-V semiconductors are elements formed using the group III and group V of the periodic table. These materials are known for their large nonlinear properties. Fabrication of integrated photonic components using these materials is rather challenging. In this work, we outline the various fabrication challenges for making nonlinear nanostructures using III-V alloys..
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Wu, Jiang, Yunyan Zhang, Frank Tutu, Phu Lam, Sabina Hatch, and Huiyun Liu. "High-efficient solar cells with III-V nanostructures." In Optics for Solar Energy. OSA, 2013. http://dx.doi.org/10.1364/ose.2013.rm1d.1.

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Hasegawa, Hideki, and Seiya Kasai. "Sensing terahertz signals with III-V quantum nanostructures." In Integrated Optoelectronics Devices, edited by Manijeh Razeghi and Gail J. Brown. SPIE, 2003. http://dx.doi.org/10.1117/12.479611.

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Reports on the topic "III-V nanostructure"

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Hubbard, Seth. High Efficiency Nanostructured III-V Photovoltaics for Solar Concentrator Application. Office of Scientific and Technical Information (OSTI), 2012. http://dx.doi.org/10.2172/1052851.

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