Relevant bibliographies by topics / III-V Quantum dots

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Academic literature on the topic 'III-V Quantum dots'

Author: Grafiati
Published: 4 June 2021
Last updated: 7 February 2022

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Journal articles on the topic "III-V Quantum dots"

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Nozik, Arthur J., and Olga I. Mićić. "Colloidal Quantum Dots of III-V Semiconductors." MRS Bulletin 23, no. 2 (1998): 24–30. http://dx.doi.org/10.1557/s0883769400031237.

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Quantization effects in semiconductor structures were first demonstrated in the early 1970s in III-V quantum wells; these structures consisted of a thin epitaxial film of a smaller bandgap (Eg) semiconductor (e.g., GaAs, Eg = 1.42 eV) sandwiched between two epitaxial films of a larger bandgap semiconductor (e.g., Al0.3Ga0.7As, Eg = 2.0 eV). The conduction- and valence-band offsets of the two semiconductor materials produce potential barriers for electrons and holes, respectively. The smaller bandgap semiconductor constitutes the quantum-well region and the larger bandgap material the potential
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Green, Mark. "Solution routes to III–V semiconductor quantum dots." Current Opinion in Solid State and Materials Science 6, no. 4 (2002): 355–63. http://dx.doi.org/10.1016/s1359-0286(02)00028-1.

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Mäntynen, Henrik, Nicklas Anttu, Zhipei Sun, and Harri Lipsanen. "Single-photon sources with quantum dots in III–V nanowires." Nanophotonics 8, no. 5 (2019): 747–69. http://dx.doi.org/10.1515/nanoph-2019-0007.

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AbstractSingle-photon sources are one of the key components in quantum photonics applications. These sources ideally emit a single photon at a time, are highly efficient, and could be integrated in photonic circuits for complex quantum system designs. Various platforms to realize such sources have been actively studied, among which semiconductor quantum dots have been found to be particularly attractive. Furthermore, quantum dots embedded in bottom-up-grown III–V compound semiconductor nanowires have been found to exhibit relatively high performance as well as beneficial flexibility in fabrica
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Leon, R., C. Lobo, A. Clark, et al. "Different paths to tunability in III–V quantum dots." Journal of Applied Physics 84, no. 1 (1998): 248–54. http://dx.doi.org/10.1063/1.368076.

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Chutia, Sucismita, and A. K. Bhattacharjee. "III-V semiconductor quantum dots with a magnetic impurity." physica status solidi (c) 6, no. 10 (2009): 2101–6. http://dx.doi.org/10.1002/pssc.200881709.

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Wijewardena Gamalath, K. A. I. L., and M. A. I. P. Fernando. "Strain Distributions in Group IV and III-V Semiconductor Quantum Dots." International Letters of Chemistry, Physics and Astronomy 7 (September 2013): 36–48. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.7.36.

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A theoretical model was developed using Green’s function with an anisotropic elastic tensor to study the strain distribution in and around three dimensional semiconductor pyramidal quantum dots formed from group IV and III-V material systems namely, Ge on Si, InAs on GaAs and InP on AlP. A larger positive strain in normal direction which tends to zero beyond 6nm was observed for all three types while the strains parallel to the substrate were negative. For all the three types of quantum dots hydrostatic strain and biaxial strain along x and z directions were not linear but described a curve wi
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Shusterman, S., A. Raizman, A. Sher, et al. "Two-dimensional imaging of III-V quantum dots confinement potential." EPL (Europhysics Letters) 88, no. 6 (2009): 66003. http://dx.doi.org/10.1209/0295-5075/88/66003.

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Nightingale, Adrian M., and John C. de Mello. "Controlled Synthesis of III-V Quantum Dots in Microfluidic Reactors." ChemPhysChem 10, no. 15 (2009): 2612–14. http://dx.doi.org/10.1002/cphc.200900462.

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Asahi, Hajime. "Self-Organized Quantum Wires and Dots in III - V semiconductors." Advanced Materials 9, no. 13 (1997): 1019–26. http://dx.doi.org/10.1002/adma.19970091305.

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Kash, K. "Optical properties of III–V semiconductor quantum wires and dots." Journal of Luminescence 46, no. 2 (1990): 69–82. http://dx.doi.org/10.1016/0022-2313(90)90009-z.

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Dissertations / Theses on the topic "III-V Quantum dots"

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Ashmore, Adam Dennis. "Optical characterisation of III-V semiconductor quantum dots and quantum dot structures." Thesis, University of Sheffield, 2004. http://etheses.whiterose.ac.uk/3563/.

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This thesis describes an extensive study of the optical properties of In(Ga)As/Ga(Al)As quantum dots, both singularly and in laser devices. For the optical characterisation, the spectroscopic techniques of photoluminescence (PL), photoluminescence-excitation (PLE) and electroluminescence (EL) have been used. Additionally, for studying submicron structures, sophisticated micro-PL techniques allowed excitation, and detection, of a single quantum dot. A variety of special growth and fabrication techniques were used to isolate a single quantum dot from the rest of the ensemble. Firstly, a submicro
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Elliott, Claire Jane. "Spin phenomena in III-V semicondoctor quantum dots." Thesis, University of Sheffield, 2011. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.574607.

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The growth optimisation and nuclear spinl eddects in Ill-V semiconductor quantum dots are investigated and described in this thesis, The two main methods of epitaxial growt.h (molecular beam epitaxy and metal-orgnic vapour phase epitaxy) are considered, QuantuIIl dot growt h within material system of InP/GaInP is studied. with the effect on the resulting quantum dot charactristics such as spatial and spectral density investigated with respect to growth parameters, This provides an optimised low density of quantum dots for single-dot studies. The nuclear spin behaviour of single quantum dots is
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O'Hara, John. "Quantum light with quantum dots in III-V photonic integrated circuits : towards scalable quantum computing architectures." Thesis, University of Sheffield, 2017. http://etheses.whiterose.ac.uk/20113/.

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The work in this thesis is motivated by the goal of creating scalable quantum computers, and equally by the physical understanding that develops alongside and follows from this. The fields of physics and technology are symbiotic, and quantum information processing is a prime example. The field has the potential to test quantum mechanics in new and profound ways. Here we approach the technological problem by building upon the foundations laid by the semiconductor chip manufacturing industry. This architecture is based on the III-V semiconductors Gallium Arsenide and Indium Arsenide. Combining t
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Babazadeh, Nasser. "Optics of III-V semiconductor quantum dots : fundamental properties and applications." Thesis, University of Sheffield, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.531208.

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Koroknay, Elisabeth [Verfasser]. "Epitaxial processes for low-density quantum dots in III/V semiconductors / Elisabeth Koroknay." München : Verlag Dr. Hut, 2014. http://d-nb.info/1051549795/34.

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Rengstl, Ulrich [Verfasser]. "III-V Semiconductor Photonic Integrated Circuits with Quantum Dots as Single-Photon Emitters / Ulrich Rengstl." München : Verlag Dr. Hut, 2017. http://d-nb.info/1140977695/34.

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Dufåker, Daniel, L. O. Mereni, Fredrik K. Karlsson, et al. "Exciton-phonon coupling in single quantum dots with different barriers." Linköpings universitet, Halvledarmaterial, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-67198.

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The coupling between longitudinal-optical (LO) phonons and neutral excitons in two different kinds of InGaAs pyramidal quantum dots embedded in either AlGaAs or GaAs barriers is experimentally examined. We find a slightly weaker exciton-LO-phonon coupling and increased linewidth of the phonon replicas for the quantum dots with GaAs barriers compared to the ones with AlGaAs barriers. These results, combined with the fact that the LO-phonon energy of the exciton is the same for both kinds of dots, are taken as evidence that the excitons mainly couple to LO-phonons within the QDs.<br>Original Pub
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Hatami, Fariba. "Indium phosphide quantum dots in GaP and in In 0.48 Ga 0.52 P." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2002. http://dx.doi.org/10.18452/14873.

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Im Rahmen dieser Arbeit wurden selbstorganisierte, verspannte InP-Quantenpunkte mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und optische Eigenschaften untersucht. Die Quantenpunkte wurden sowohl in InGaP-Matrix gitterangepasst auf GaAs-Substrat als auch in GaP-Matrix auf GaP-Substrat realisiert. Die starke Gitterfehlanpassung von 3,8% im InP/InGaP- bzw. 7,7% im InP/GaP-Materialsystem ermöglicht Inselbildung mittels des Stranski-Krastanow-Wachstumsmodus: Ab einer kritischen InP-Schichtdicke findet kein zweidimensionales, sondern ein dreidimensionales Wachstum
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Thota, Venkata Ramana Kumar. "Tunable Optical Phenomena and Carrier Recombination Dynamics in III-V Semiconductor Nanostructures." Ohio University / OhioLINK, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=ohiou1451807323.

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Zallo, Eugenio. "Control of electronic and optical properties of single and double quantum dots via electroelastic fields." Doctoral thesis, Universitätsbibliothek Chemnitz, 2015. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-qucosa-162870.

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Semiconductor quantum dots (QDs) are fascinating systems for potential applications in quantum information processing and communication, since they can emit single photons and polarisation entangled photons pairs on demand. The asymmetry and inhomogeneity of real QDs has driven the development of a universal and fine post-growth tuning technique. In parallel, new growth methods are desired to create QDs with high emission efficiency and to control combinations of closely-spaced QDs, so-called "QD molecules" (QDMs). These systems are crucial for the realisation of a scalable information process
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Books on the topic "III-V Quantum dots"

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Vvedensky, Dimitri D. Quantum dots: Self-organized and self-limiting assembly. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.6.

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This article describes the self-organized and self-limiting assembly of quantum dots, with particular emphasis on III–V semiconductor quantum dots. It begins with a background on the second industrial revolution, highlighted by advances in information technology and which paved the way for the era of ‘quantum nanostructures’. It then considers the science and technology of quantum dots, followed by a discussion on methods of epitaxial growth and fabrication methodologies of semiconductor quantum dots and other supported nanostructures, including molecular beam epitaxy and metalorganic vapor-ph
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Li, Jing, and Xiao-Ying Huang. Nanostructured crystals: An unprecedented class of hybrid semiconductors exhibiting structure-induced quantum confinement effect and systematically tunable properties. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.16.

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This article describes the structure-induced quantum confinement effect in nanostructured crystals, a unique class of hybrid semiconductors that incorporate organic and inorganic components into a single-crystal lattice via covalent (coordinative) bonds to form extended one-, two- and three-dimensional network structures. These structures are comprised of subnanometer-sized II-VI semiconductor segments (inorganic component) and amine molecules (organic component) arranged into perfectly ordered arrays. The article first provides an overview of II-VI and III-V semiconductors, II-VI colloidal qu
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Vurgaftman, Igor, Matthew P. Lumb, and Jerry R. Meyer. Bands and Photons in III-V Semiconductor Quantum Structures. Oxford University Press, 2020. http://dx.doi.org/10.1093/oso/9780198767275.001.0001.

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Semiconductor quantum structures are at the core of many photonic devices such as lasers, photodetectors, solar cells etc. To appreciate why they are such a good fit to these devices, we must understand the basic features of their band structure and how they interact with incident light. This book takes the reader from the very basics of III-V semiconductors (some preparation in quantum mechanics and electromagnetism is helpful) and shows how seemingly obscure results such as detailed forms of the Hamiltonian, optical transition strengths, and recombination mechanisms follow. The reader does n
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Book chapters on the topic "III-V Quantum dots"

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Schliwa, Andrei, Gerald Hönig, and Dieter Bimberg. "Electronic Properties of III-V Quantum Dots." In Multi-Band Effective Mass Approximations. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-01427-2_2.

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Pohl, Udo W., Sven Rodt, and Axel Hoffmann. "Optical Properties of III–V Quantum Dots." In Semiconductor Nanostructures. Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-77899-8_14.

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Akahane, Kouichi, and Yoshiaki Nakata. "Applications of III-V Semiconductor Quantum Dots in Optoelectronic Devices." In Molecular Beam Epitaxy. John Wiley & Sons Ltd, 2019. http://dx.doi.org/10.1002/9781119354987.ch9.

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Guda, Alexander A., Mikhail A. Soldatov, and Alexander V. Soldatov. "Group III–V and II–VI Quantum Dots and Nanoparticles." In Springer Series in Optical Sciences. Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-662-44362-0_12.

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Sanguinetti, Stefano, Sergio Bietti, and Giovanni Isella. "Integration of Strain Free III–V Quantum Dots on Silicon." In Silicon-based Nanomaterials. Springer New York, 2013. http://dx.doi.org/10.1007/978-1-4614-8169-0_13.

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Ploog, K., O. Brandt, and R. Nötzel. "Direct Fabrication of III–V Semiconductor Quantum Dots and Quantum Wires by Molecular Beam Epitaxy." In Low-Dimensional Electronic Systems. Springer Berlin Heidelberg, 1992. http://dx.doi.org/10.1007/978-3-642-84857-5_12.

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Petroff, P. M. "Growth and Properties of Self Assembling Quantum Dots in III–V Compound Semiconductors." In Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0341-1_5.

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Kumar, Subindu, Dipankar Biswas, and Tapas Das. "Dependence of the Absorption Spectra of III-V Semiconductor Quantum Dots on the Size Distribution." In Semiconductor Photonics: Nano-Structured Materials and Devices. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-471-5.59.

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Cappelluti, F., A. Tukiainen, T. Aho, et al. "Quantum Dot-Based Thin-Film III–V Solar Cells." In Quantum Dot Optoelectronic Devices. Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-35813-6_1.

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Atwater, H. A., K. J. Vahala, R. C. Flagan, et al. "Group III–V and Group IV Quantum Dot Synthesis." In Low Dimensional Structures Prepared by Epitaxial Growth or Regrowth on Patterned Substrates. Springer Netherlands, 1995. http://dx.doi.org/10.1007/978-94-011-0341-1_7.

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Conference papers on the topic "III-V Quantum dots"

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Akahane, Kouichi, and Naokatsu Yamamoto. "Fabrication of III-V semiconductor quantum dots." In SPIE NanoScience + Engineering, edited by Satoshi Kawata, Vladimir M. Shalaev, and Din Ping Tsai. SPIE, 2009. http://dx.doi.org/10.1117/12.824233.

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Joyce, Hannah J., Chawit Uswachoke, Sarwat A. Baig, et al. "Engineering III-V nanowires for optoelectronics: from epitaxy to terahertz photonics." In Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, edited by Diana L. Huffaker and Holger Eisele. SPIE, 2018. http://dx.doi.org/10.1117/12.2299831.

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Kulik, Heather. "Electronic Structure Origins of Surface-Dependent Growth in III–V Quantum Dots." In nanoGe Fall Meeting 2019. Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.ngfm.2019.003.

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Ploog, Klaus H., and Richard Noetzel. "Direct synthesis of III-V semiconductor quantum wires and quantum dots by molecular-beam epitaxy." In Semiconductors '92, edited by Roger J. Malik, Chris J. Palmstrom, Salah M. Bedair, Harold G. Craighead, and Randall L. Kubena. SPIE, 1992. http://dx.doi.org/10.1117/12.137645.

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Koblmüller, Gregor, Thomas Stettner, Jochen Bissinger, et al. "Challenges in the monolithic integration and epitaxial gain control of III-V nanowire lasers on silicon (Conference Presentation)." In Quantum Dots and Nanostructures: Growth, Characterization, and Modeling XV, edited by Diana L. Huffaker and Holger Eisele. SPIE, 2018. http://dx.doi.org/10.1117/12.2300033.

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Kumar, Subindu, Sanjib Kabi, and Dipankar Biswas. "Effects of shape, dimension and interdiffusion on the photoluminescence of III-V semiconductor quantum dots." In 2007 International Workshop on Physics of Semiconductor Devices (IWPSD '07). IEEE, 2007. http://dx.doi.org/10.1109/iwpsd.2007.4472666.

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Agarwal, Anubhav, Abhijeet Aanand, Sanowar A. Gazi, et al. "The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots." In Low-Dimensional Materials and Devices 2019, edited by Nobuhiko P. Kobayashi, A. Alec Talin, and Albert V. Davydov. SPIE, 2019. http://dx.doi.org/10.1117/12.2528996.

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Tang, Shiang Feng, Shih Yen Lin, S. T. Yang, et al. "Surface morphology and photoluminescence of InAs quantum dots grown on [110]-oriented streaked-islands under ultralow V/III ratio." In Microtechnologies for the New Millennium 2003, edited by Robert Vajtai, Xavier Aymerich, Laszlo B. Kish, and Angel Rubio. SPIE, 2003. http://dx.doi.org/10.1117/12.498276.

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Lyeo, Ho-Ki, C. K. Ken Shih, Uttam Ghoshal, and Li Shi. "Thermoelectric Mapping of Nanostructures." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-32766.

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There is intense interest to develop nanowires [1] and superlattices [2] that may offer superior thermoelectric figure of merit for efficient energy conversion. Meanwhile, the advance of semiconductor processing techniques has yielded impurity-doped semiconductor nanostructures with a doped region as small as a few nanometers. These include shallow junction Si field-effect transistors, strained Si/SiGe/Ge heterostructures and quantum dots, III-V heterostructures, and doped nanowires and nanotubes. Due to various size confinement effects, these doped semiconductor nanostructures often have uniq
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Forbes, David V., Seth M. Hubbard, Christopher Bailey, Stephen Polly, John Andersen, and Ryne Raffaelle. "III-V quantum dot enhanced photovoltaic devices." In SPIE Solar Energy + Technology, edited by Loucas Tsakalakos. SPIE, 2010. http://dx.doi.org/10.1117/12.863142.

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