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Journal articles on the topic 'III-V Quantum dots'

Author: Grafiati

Published: 4 June 2021

Last updated: 7 February 2022

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1

Nozik, Arthur J., and Olga I. Mićić. "Colloidal Quantum Dots of III-V Semiconductors." MRS Bulletin 23, no. 2 (1998): 24–30. http://dx.doi.org/10.1557/s0883769400031237.

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Quantization effects in semiconductor structures were first demonstrated in the early 1970s in III-V quantum wells; these structures consisted of a thin epitaxial film of a smaller bandgap (Eg) semiconductor (e.g., GaAs, Eg = 1.42 eV) sandwiched between two epitaxial films of a larger bandgap semiconductor (e.g., Al0.3Ga0.7As, Eg = 2.0 eV). The conduction- and valence-band offsets of the two semiconductor materials produce potential barriers for electrons and holes, respectively. The smaller bandgap semiconductor constitutes the quantum-well region and the larger bandgap material the potential

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2

Green, Mark. "Solution routes to III–V semiconductor quantum dots." Current Opinion in Solid State and Materials Science 6, no. 4 (2002): 355–63. http://dx.doi.org/10.1016/s1359-0286(02)00028-1.

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3

Mäntynen, Henrik, Nicklas Anttu, Zhipei Sun, and Harri Lipsanen. "Single-photon sources with quantum dots in III–V nanowires." Nanophotonics 8, no. 5 (2019): 747–69. http://dx.doi.org/10.1515/nanoph-2019-0007.

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AbstractSingle-photon sources are one of the key components in quantum photonics applications. These sources ideally emit a single photon at a time, are highly efficient, and could be integrated in photonic circuits for complex quantum system designs. Various platforms to realize such sources have been actively studied, among which semiconductor quantum dots have been found to be particularly attractive. Furthermore, quantum dots embedded in bottom-up-grown III–V compound semiconductor nanowires have been found to exhibit relatively high performance as well as beneficial flexibility in fabrica

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4

Leon, R., C. Lobo, A. Clark, et al. "Different paths to tunability in III–V quantum dots." Journal of Applied Physics 84, no. 1 (1998): 248–54. http://dx.doi.org/10.1063/1.368076.

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5

Chutia, Sucismita, and A. K. Bhattacharjee. "III-V semiconductor quantum dots with a magnetic impurity." physica status solidi (c) 6, no. 10 (2009): 2101–6. http://dx.doi.org/10.1002/pssc.200881709.

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6

Wijewardena Gamalath, K. A. I. L., and M. A. I. P. Fernando. "Strain Distributions in Group IV and III-V Semiconductor Quantum Dots." International Letters of Chemistry, Physics and Astronomy 7 (September 2013): 36–48. http://dx.doi.org/10.18052/www.scipress.com/ilcpa.7.36.

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A theoretical model was developed using Green’s function with an anisotropic elastic tensor to study the strain distribution in and around three dimensional semiconductor pyramidal quantum dots formed from group IV and III-V material systems namely, Ge on Si, InAs on GaAs and InP on AlP. A larger positive strain in normal direction which tends to zero beyond 6nm was observed for all three types while the strains parallel to the substrate were negative. For all the three types of quantum dots hydrostatic strain and biaxial strain along x and z directions were not linear but described a curve wi

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7

Shusterman, S., A. Raizman, A. Sher, et al. "Two-dimensional imaging of III-V quantum dots confinement potential." EPL (Europhysics Letters) 88, no. 6 (2009): 66003. http://dx.doi.org/10.1209/0295-5075/88/66003.

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8

Nightingale, Adrian M., and John C. de Mello. "Controlled Synthesis of III-V Quantum Dots in Microfluidic Reactors." ChemPhysChem 10, no. 15 (2009): 2612–14. http://dx.doi.org/10.1002/cphc.200900462.

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9

Asahi, Hajime. "Self-Organized Quantum Wires and Dots in III - V semiconductors." Advanced Materials 9, no. 13 (1997): 1019–26. http://dx.doi.org/10.1002/adma.19970091305.

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10

Kash, K. "Optical properties of III–V semiconductor quantum wires and dots." Journal of Luminescence 46, no. 2 (1990): 69–82. http://dx.doi.org/10.1016/0022-2313(90)90009-z.

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11

Kim, Youngsik, Jun Hyuk Chang, Hyekyoung Choi, Yong-Hyun Kim, Wan Ki Bae, and Sohee Jeong. "III–V colloidal nanocrystals: control of covalent surfaces." Chemical Science 11, no. 4 (2020): 913–22. http://dx.doi.org/10.1039/c9sc04290c.

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Unveiling the atomistic surface structure of colloidal quantum dots may provide the route to rational design of highly performing III–V nanocrystals with control over energy levels position, surface energy, trap passivation, and heterojunction interface.

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12

Ren, Aobo, Liming Yuan, Hao Xu, Jiang Wu, and Zhiming Wang. "Recent progress of III–V quantum dot infrared photodetectors on silicon." Journal of Materials Chemistry C 7, no. 46 (2019): 14441–53. http://dx.doi.org/10.1039/c9tc05738b.

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13

Harris, Daniel K., and Moungi G. Bawendi. "Improved Precursor Chemistry for the Synthesis of III–V Quantum Dots." Journal of the American Chemical Society 134, no. 50 (2012): 20211–13. http://dx.doi.org/10.1021/ja309863n.

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14

Pahlke, D., F. Poser, E. Steimetz, M. Pristovsek, N. Esser, and W. Richter. "Photoluminescence Scanning Near-Field Optical Microscopy on III–V Quantum Dots." physica status solidi (a) 170, no. 2 (1998): 401–10. http://dx.doi.org/10.1002/(sici)1521-396x(199812)170:2<401::aid-pssa401>3.0.co;2-i.

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15

Daudin, B., F. Widmann, G. Feuillet, Y. Samson, J. L. Rouvière, and N. Pelekanos. "Elaboration of III-V Nitrides Quantum Dots in Molecular Beam Epitaxy." Materials Science Forum 264-268 (February 1998): 1177–80. http://dx.doi.org/10.4028/www.scientific.net/msf.264-268.1177.

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16

Mićić, O. I., and A. J. Nozik. "Synthesis and characterization of binary and ternary III–V quantum dots." Journal of Luminescence 70, no. 1-6 (1996): 95–107. http://dx.doi.org/10.1016/0022-2313(96)00047-6.

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17

Bimberg, D., M. Grundmann, and N. N. Ledentsov. "Growth, Spectroscopy, and Laser Application of Self-Ordered III-V Quantum Dots." MRS Bulletin 23, no. 2 (1998): 31–34. http://dx.doi.org/10.1557/s0883769400031249.

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The development and application of semiconductor light-emitting and laser diodes has been a huge success during the last 30 years in key areas of modern technology like communications, recording, and printing. Still there is ample room for improvement through combination of the atomlike properties for zero-dimensionally localized carriers in quantum dots (QDs) with state-of-the-art semiconductor-laser technology. Low, temperature-insensitive threshold current; high gain; and differential gain have been predicted since the early 1980s.In the past two decades, the fabrication of QDs has been att

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18

Zhao, Qing, and Heather J. Kulik. "Electronic Structure Origins of Surface-Dependent Growth in III–V Quantum Dots." Chemistry of Materials 30, no. 20 (2018): 7154–65. http://dx.doi.org/10.1021/acs.chemmater.8b03125.

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19

Lobo, C., R. Leon, S. Fafard, and P. G. Piva. "Intermixing induced changes in the radiative emission from III–V quantum dots." Applied Physics Letters 72, no. 22 (1998): 2850–52. http://dx.doi.org/10.1063/1.121478.

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20

Ikeda, Katsumoto, Fujio Minami, and Nobuyuki Koguchi. "Thermal broadening of the exciton line in III–V semiconductor quantum dots." physica status solidi (c) 1, no. 3 (2004): 573–76. http://dx.doi.org/10.1002/pssc.200304042.

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21

ASAHI, H. "ChemInform Abstract: Self-Organized Quantum Wires and Dots in III-V Semiconductors." ChemInform 28, no. 52 (2010): no. http://dx.doi.org/10.1002/chin.199752277.

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22

Hussain, S., A. Pozzato, M. Tormen, V. Zannier, and G. Biasiol. "III–V site-controlled quantum dots on Si patterned by nanoimprint lithography." Journal of Crystal Growth 437 (March 2016): 59–62. http://dx.doi.org/10.1016/j.jcrysgro.2015.03.056.

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23

Jang, Youngjin, Arthur Shapiro, Faris Horani, Yaron Kauffmann, and Efrat Lifshitz. "Towards Low-Toxic Colloidal Quantum Dots." Zeitschrift für Physikalische Chemie 232, no. 9-11 (2018): 1443–55. http://dx.doi.org/10.1515/zpch-2018-1148.

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Abstract Colloidal quantum dots (CQDs) are of enormous interest in the scientific and engineering fields. During the past few decades, significant efforts have been conducted in investigating Cd- and Pb-based CQDs, resulting in excellent photoluminescence (PL) properties and impressive performance in various applications. But the high toxicity of Cd and Pb elements pushed the scientific community to explore low-toxic CQDs excluding poisonous heavy metals. Several semiconductor materials with lower toxicity than Cd and Pb species have been proposed. This article presents a short overview of rec

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24

Kumar, Subindu, Dipankar Biswas, and Tapas Das. "Dependence of the Absorption Spectra of III-V Semiconductor Quantum Dots on the Size Distribution." Advanced Materials Research 31 (November 2007): 59–61. http://dx.doi.org/10.4028/www.scientific.net/amr.31.59.

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In recent years there have been extensive studies on III-V semiconductor quantum dots (QDs). In this paper we have formulated the absorption spectra of a realistic QD system with dot size distribution described by a Gaussian function. The dots were approximated as cubic boxes having finite potentials at the boundaries. The effects of size non uniformity on the optical absorption spectra of a realistic QD system was analyzed and the results have been compared with ideal dots having infinite potentials at the boundaries.

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25

Robarts, L., and K. S. V. Santhanam. "Interfacial Electron Transfer Involving Vanadium and Graphene Quantum Dots for Redox Flow Battery." MRS Advances 3, no. 22 (2018): 1221–28. http://dx.doi.org/10.1557/adv.2018.153.

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ABSTRACTAmong energy storage devices, the redox flow batteries are important for variety of applications such as for grid storage. In this class of batteries a large number of redox couples have been examined in the past. The vanadium redox couple, although is attractive for this application, suffers from a) poor charge transfer characteristics b) electrode degradation and c) deteriorating performance. We wish to report here that all these deficiencies have been overcome by using a graphene quantum dot electrodes. This electrode has the advantage of large surface area, high electrical and ther

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26

Mikhailov, A. I., V. F. Kabanov, I. A. Gorbachev, and E. G. Glukhovsky. "Study of the Properties of II–VI and III–V Semiconductor Quantum Dots." Semiconductors 52, no. 6 (2018): 750–54. http://dx.doi.org/10.1134/s1063782618060155.

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27

Bouttemy, Muriel, Damien Aureau, Mathieu Frégnaux, et al. "Nanoscale Wet Chemical Engineering of III-V Quantum Dots for Emerging Solar Applications." ECS Transactions 89, no. 4 (2019): 37–46. http://dx.doi.org/10.1149/08904.0037ecst.

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28

BEANLAND, R., A. M. SÁNCHEZ, J. C. HERNANDEZ-GARRIDO, D. WOLF, and P. A. MIDGLEY. "Electron tomography of III-V quantum dots using dark field 002 imaging conditions." Journal of Microscopy 237, no. 2 (2010): 148–54. http://dx.doi.org/10.1111/j.1365-2818.2009.03318.x.

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29

Kawabe, Mitsuo, Kohichi Akahane, Sheng Lan, Kennji Okino, Yositaka Okada, and Hiromichi Koyama. "Self-Organization of High-Density III–V Quantum Dots on High-Index Substrates." Japanese Journal of Applied Physics 38, Part 1, No. 1B (1999): 491–95. http://dx.doi.org/10.1143/jjap.38.491.

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30

Saha, Jhuma, Debiprasad Panda, Binita Tongbram, Debabrata Das, Vinayak Chavan, and Subhananda Chakrabarti. "Higher performance optoelectronic devices with In0.21Al0.21Ga0.58As/In0.15Ga0.85As capping of III-V quantum dots." Journal of Luminescence 210 (June 2019): 75–82. http://dx.doi.org/10.1016/j.jlumin.2019.02.022.

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31

Loeber, Thomas H., Dirk Hoffmann, and Henning Fouckhardt. "Dense lying self-organized GaAsSb quantum dots on GaAs for efficient lasers." Beilstein Journal of Nanotechnology 2 (June 30, 2011): 333–38. http://dx.doi.org/10.3762/bjnano.2.39.

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GaAsSb quantum dots (QDs) were grown on GaAs in the Stranski–Krastanov (SK) epitaxial mode. Their characteristics were dependent on the Sb/Ga (V/III) flux ratio and the growth temperature. The samples were grown with a V/III ratio between 0.45/1 and 1.50/1 and a temperature between 445 and 580 °C, not commonly used by other research groups. These parameters enabled the growth of dense lying dots with a density at least up to 6.5 × 1010 cm−2 and a diameter and height of 20 and 4 nm, respectively. The photoluminescence (PL) spectra revealed a QD peak at an emission wavelength between λ = 0.876 a

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32

Hasegawa, Hideki, Hajime Fujikura, and Hiroshi Okada. "Molecular-Beam Epitaxy and Device Applications of III-V Semiconductor Nanowires." MRS Bulletin 24, no. 8 (1999): 25–30. http://dx.doi.org/10.1557/s0883769400052866.

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A scaling-down of feature sizes into the nanometer range is a common trend in silicon and compound semiconductor advanced devices. That this trend will continue is clearly evidenced by the fact that the “roadmap” for the Si ultralarge-scale-integration circuit (USLI) industry targets production-level realization of a 70-nm minimum feature size for the year 2010. GaAs- and InP-based heterostructure devices such as high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) have made remarkable progress by miniaturization, realizing ultrahigh speeds approaching the T

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33

Leosson, K., D. Birkedal, I. Magnusdottir, W. Langbein, and J. M. Hvam. "Homogeneous linewidth of self-assembled III–V quantum dots observed in single-dot photoluminescence." Physica E: Low-dimensional Systems and Nanostructures 17 (April 2003): 1–6. http://dx.doi.org/10.1016/s1386-9477(02)00698-7.

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34

Baek, Jinyoung, Yi Shen, Ioannis Lignos, Moungi G. Bawendi, and Klavs F. Jensen. "Multistage Microfluidic Platform for the Continuous Synthesis of III-V Core/Shell Quantum Dots." Angewandte Chemie 130, no. 34 (2018): 11081–84. http://dx.doi.org/10.1002/ange.201805264.

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35

Baek, Jinyoung, Yi Shen, Ioannis Lignos, Moungi G. Bawendi, and Klavs F. Jensen. "Multistage Microfluidic Platform for the Continuous Synthesis of III-V Core/Shell Quantum Dots." Angewandte Chemie International Edition 57, no. 34 (2018): 10915–18. http://dx.doi.org/10.1002/anie.201805264.

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36

Nakajima, Kazuo. "Equilibrium Phase Diagrams for Stranski-Krastanov Structure Mode of III–V Ternary Quantum Dots." Japanese Journal of Applied Physics 38, Part 1, No. 4A (1999): 1875–83. http://dx.doi.org/10.1143/jjap.38.1875.

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37

Prucnal, S., M. Turek, K. Gao, et al. "III-V Quantum Dots in Dielectrics Made by Ion Implantation and Flash Lamp Annealing." Acta Physica Polonica A 123, no. 5 (2013): 935–38. http://dx.doi.org/10.12693/aphyspola.123.935.

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38

Vulović, Boris M., Igor Ovchinnikov, and Kang L. Wang. "On the upper limit for optical spin pumping in III-V semiconductor quantum dots." Journal of Applied Physics 109, no. 6 (2011): 063916. http://dx.doi.org/10.1063/1.3567303.

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39

Benyoucef, M., and J. P. Reithmaier. "Direct growth of III–V quantum dots on silicon substrates: structural and optical properties." Semiconductor Science and Technology 28, no. 9 (2013): 094004. http://dx.doi.org/10.1088/0268-1242/28/9/094004.

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40

Semichaevsky, A. V., R. S. Goldman, and H. T. Johnson. "Linking computational and experimental studies of III–V quantum dots for optoelectronics and photovoltaics." JOM 63, no. 9 (2011): 20–26. http://dx.doi.org/10.1007/s11837-011-0153-8.

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41

Vasilevskiy, Mikhail I., and Carlos Trallero-Giner. "Resonant Raman scattering in spherical quantum dots: II-VI versus III-V semiconductor nanocrystals." physica status solidi (b) 247, no. 6 (2010): 1488–91. http://dx.doi.org/10.1002/pssb.200983230.

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42

Giroire, Baptiste, Alain Garcia, Samuel Marre, Thierry Cardinal, and Cyril Aymonier. "Chemistry Platform for the Ultrafast Continuous Synthesis of High‐Quality III–V Quantum Dots." Chemistry – A European Journal 27, no. 51 (2021): 12965–70. http://dx.doi.org/10.1002/chem.202101802.

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43

Jin, Shan, Yanxi Hu, Zhanjun Gu, Lei Liu, and Hai-Chen Wu. "Application of Quantum Dots in Biological Imaging." Journal of Nanomaterials 2011 (2011): 1–13. http://dx.doi.org/10.1155/2011/834139.

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Quantum dots (QDs) are a group of semiconducting nanomaterials with unique optical and electronic properties. They have distinct advantages over traditional fluorescent organic dyes in chemical and biological studies in terms of tunable emission spectra, signal brightness, photostability, and so forth. Currently, the major type of QDs is the heavy metal-containing II-IV, IV-VI, or III-V QDs. Silicon QDs and conjugated polymer dots have also been developed in order to lower the potential toxicity of the fluorescent probes for biological applications. Aqueous solubility is the common problem for

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44

YAKIMOV, ANDREW I., and ANATOLII V. DVURECHENSKII. "GERMANIUM SELF-ASSEMBLED QUANTUM DOTS IN SILICON FOR MID-INFRARED PHOTODETECTORS." International Journal of High Speed Electronics and Systems 12, no. 03 (2002): 873–89. http://dx.doi.org/10.1142/s0129156402001721.

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We present an overview of the experimental results in the field of quantum dot infrared photodetectors (QDIPs) implemented on Ge self-assembled quantum dots (QDs) in Si. QDs are fabricated using Stranski-Krastanov epitaxial growth mode. The effect of photoconductivity is associated with the photoexciation of holes from bound to bound states in Ge QDs or from bound states in Ge dots to continuum states in the Ge wetting and Si barrier layers. The depolarization field effect in the collective interlevel excitations of a dense array of Ge/Si QDs is discussed. The comparison between operating char

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45

Xu, Bo, Z. G. Wang, Y. H. Chen, P. Jin, X. L. Ye, and Feng Qi Liu. "Controlled Growth of III-V Compound Semiconductor Nano-Structures and Their Application in Quantum-Devices." Materials Science Forum 475-479 (January 2005): 1783–86. http://dx.doi.org/10.4028/www.scientific.net/msf.475-479.1783.

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This paper reviews our work on controlled growth of self-assembled semiconductor nanostructures, and their application in light-emission devices. High-power, long-life quantum dots (QD) lasers emitting at ~1 µm, red-emitting QD lasers, and long-wavelength QD lasers on GaAs substrates have successfully been achieved by optimizing the growth conditions of QDs.

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46

Wang, Hai Yan, Ya Ting Zhang, Xiao Xian Song, et al. "Design and Implementation of Colloidal Quantum Dot Field-Effect Transistors." Applied Mechanics and Materials 668-669 (October 2014): 818–21. http://dx.doi.org/10.4028/www.scientific.net/amm.668-669.818.

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With the breakthrough of mobility in quantum dot electric field transistors (Q-EFTs), the potential application in these functional devices has revealed and been paid more attentions, due to flexibility in design, low cost, facility for processing and large area. One of the most important applications of FETs is the photoconductive detector. However, these functional FETs have less been reported. In this work, colloidal PbS Q-FETs were successfully fabricated by reasonable structure design and layer-by-layer depositon technique PbS quantum-dots. The bipolar property was demonstrated by the out

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47

Tu, Charles W., and Paul K.L.Yu. "Material Properties of III–V Semiconductors for Lasers and Detectors." MRS Bulletin 28, no. 5 (2003): 345–49. http://dx.doi.org/10.1557/mrs2003.98.

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AbstractWe describe how the material properties of III–V semiconductors, including bandgap, band structure, band offset, refractive index, absorption, and ionization coefficient, are exploited for lasers and photodetectors for fiber-optic communications. The material systems discussed for 1.3 μm and 1.55 μm light emission include the more traditional GaInAsP and AlGaInAs on InP, the more recently investigated GaInAs quantum dots and low-bandgap GaInNAs on GaAs as well as GaAsSb/GaAs Type II structures, and the potentially viable GaN/AlGaN from intersubband transitions (i.e., between quantized

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48

KUMAR, SUBINDU, and SANJIB KABI. "DEPENDENCE OF THE ABSORPTION SPECTRA OF III–V SEMICONDUCTOR QUANTUM DOTS ON THE FUNDAMENTAL PARAMETERS." International Journal of Nanoscience 09, no. 04 (2010): 345–49. http://dx.doi.org/10.1142/s0219581x10006934.

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The absorption spectra of semiconductor quantum dots (QDs) are expected to be a series of δ-function-like discrete lines due to the nature of the density of states. In a realistic III–V QD system, the absorption spectra is the superimposition of the contribution from each individual dot and the overall behavior is modeled by considering a Gaussian size distribution. In this paper, we study and present the dependence of the Gaussian nature of the absorption spectra of In X Ga 1-X N/GaN QD systems on the dot size distribution and some fundamental parameters such as bowing effect of the band gap,

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49

Quagliano, Lucia G. "Observation of Molecules Adsorbed on III-V Semiconductor Quantum Dots by Surface-Enhanced Raman Scattering." Journal of the American Chemical Society 126, no. 23 (2004): 7393–98. http://dx.doi.org/10.1021/ja031640f.

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50

Franke, Daniel, Daniel K. Harris, Lisi Xie, Klavs F. Jensen, and Moungi G. Bawendi. "The Unexpected Influence of Precursor Conversion Rate in the Synthesis of III-V Quantum Dots." Angewandte Chemie 127, no. 48 (2015): 14507–11. http://dx.doi.org/10.1002/ange.201505972.

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