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Journal articles on the topic 'Imageurs CMOS'

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Published: 4 June 2021

Last updated: 15 February 2022

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1

Nguyen, Dung C., Dongsheng (Brian) Ma, and Janet M. W. Roveda. "Recent Design Development in Molecular Imaging for Breast Cancer Detection Using Nanometer CMOS Based Sensors." Journal of Oncology 2012 (2012): 1–6. http://dx.doi.org/10.1155/2012/680262.

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As one of the key clinical imaging methods, the computed X-ray tomography can be further improved using new nanometer CMOS sensors. This will enhance the current technique's ability in terms of cancer detection size, position, and detection accuracy on the anatomical structures. The current paper reviewed designs of SOI-based CMOS sensors and their architectural design in mammography systems. Based on the existing experimental results, using the SOI technology can provide a low-noise (SNR around 87.8 db) and high-gain (30 v/v) CMOS imager. It is also expected that, together with the fast data acquisition designs, the new type of imagers may play important roles in the near-future high-dimensional images in additional to today's 2D imagers.

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Campos, Fernando de Souza, Bruno Albuquerque de Castro, and Jacobus W. Swart. "A Tunable CMOS Image Sensor with High Fill-Factor for High Dynamic Range Applications." Engineering Proceedings 2, no. 1 (November 14, 2020): 79. http://dx.doi.org/10.3390/ecsa-7-08235.

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Several CMOS imager sensors were proposed to obtain high dynamic range imager (>100 dB). However, as drawback these imagers implement a large number of transistors per pixel resulting in a low fill factor, high power consumption and high complexity CMOS image sensors. In this work, a new operation mode for 3 T CMOS image sensors is presented for high dynamic range (HDR) applications. The operation mode consists of biasing the conventional reset transistor as active load to photodiode generating a reference current. The output voltage achieves a steady state when the photocurrent becomes equal to the reference current, similar to the inverter operation in the transition region. At a specific bias voltage, the output swings from o to Vdd in a small light intensity range; however, high dynamic range is achieve using multiple readout at different bias voltage. For high dynamic range operation different values of bias voltage can be applied from each one, and the signal can be captured to compose a high dynamic range image. Compared to other high dynamic range architectures this proposed CMOS image pixel show as advantage high fill-factor (3 T) and lower complexity. Moreover, as the CMOS pixel does not operate in integration mode, de readout can be performed at higher speed. A prototype was fabricated at 3.3 V 0.35 µm CMOS technology. Experimental results are shown by applying five different control voltage from 0.65 to 1.2 V is possible to obtain a dynamic range of about 100 dB.

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De Vos, Joeri, Anne Jourdain, Wenqi Zhang, Koen De Munck, Piet De Moor, and Antonio La Manna. "The Road towards Fully Hybrid CMOS Imager Sensors." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 000173–80. http://dx.doi.org/10.4071/isom-2011-ta5-paper5.

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Monolithic imagers contain the photosensitive elements as well as the read-out IC (ROIC) on the same substrate. Backside thinning on carrier enables efficient collection of photo-generated carriers through back illumination, resulting in almost 100% fill factor. This contrary to front side illumination where light loss is introduced by reflection on metal interconnects. Together with an optimized backside ARC coating, high quantum efficiency (QE) can be achieved. Hybrid imagers consist of a detector array that is produced separately and hybridized on a ROIC. A fully-hybrid backside illuminated imager has more flexibility because the detector array and the ROIC can be separately optimized to the needs of the application leading towards further improvement on QE and inter pixel cross talk. Fully processed thinned diode arrays were flip-chipped onto the ROIC by means of an Indium bump per pixel. The choice of the bump type is very critical for yielding imager assemblies, or more in general, 3D assemblies. The Indium bump process has however limited fab compatibility to evolve towards a production mature hybrid imager process. Therefore an alternative electroplated CuSn micro bump process is described. We report an average daisy chain yield above 90% for die-to-die assemblies with CuSn bumps. Measurements were performed on a dedicated 1M bump area array test design with very long daisy chains of bumps on a 20μm pitch. Processing aspects like choice of plating seed layer, the influence of cleaning agents and seed layer etchants on the micro bump performance are being discussed. Finally, the impact on the daisy chain yield after thermal cycling is shown.

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Han, Bao Yuan, Yuan Yuan Shang, Xiao Xu Zhao, and Hui Liu. "Research on Noise Sources in CMOS Image Sensors." Advanced Materials Research 159 (December 2010): 527–31. http://dx.doi.org/10.4028/www.scientific.net/amr.159.527.

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CMOS (Complementary Metal Oxide Semiconductor) imagers as a solid state array develop rapidly. This article introduces various types of CMOS image sensors’ noises in detail, the cause of each noise, as well as a brief overview of current methods for reducing different noise.

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Oliveira, Fernanda D. V. R., Hugo L. Haas, José Gabriel R. C. Gomes, and Antonio Petraglia. "CMOS Image Sensor Featuring Current-Mode Focal-Plane Image Compression." Journal of Integrated Circuits and Systems 8, no. 1 (December 27, 2013): 14–21. http://dx.doi.org/10.29292/jics.v8i1.369.

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The interest in focal-plane processing techniques, by which image processing is carried out at the pixel level, has increased since the advent of active pixel sensors in the middle 90’s. By sharing processing circuitry by a group of neighboring pixels such techniques enable high-speed imaging operation and massive parallel computation. Focal-plane image compression is particularly interesting, because it allows for further reduction in data rates. The proposed approach also benefits from processing currents rather than voltages, which not only suits current-mode APS imagers, but also enables the circuits to operate at low voltage supply levels and achieve high speed. Moreover, arithmetic computations such as additions and scaling are easily implemented in current mode. Whereas current-mode imaging architectures produce higher fixed pattern noise (FPN) figures than their voltage-mode counterparts, low FPN can be achieved by applying correlated double sampling (CDS) and gain correction techniques. This work presents a 32 × 32 gray-level imaging integrated circuit featuring focal plane image compression, such that for each 4 × 4 pixel block, analog circuits implement differential pulse-code modulation, linear transform, and vector quantization. Other processing functions implemented in the chip are CDS and A/D conversion. Theoretical details are described, as well as the test setup of the chip fabricated in a 0.35 μm CMOS process. To validate the proposed technique, experimental results and captured photographs are shown. The CMOS imager compresses captured images at 0.94 bits/pixel for an overall power consumption below 40 mW (white image), which is equivalent to approximately 36 μW per pixel. Using photographs taken from bar-target pattern inputs, it is shown that details up to 2 cycles/c mare preserved in the decoded images.

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Roy, Francois, A. Tournier, H. Wehbe-Alause, F. Blanchet, P. Boulenc, F. Leverd, L. Favennec, et al. "Challenges in CMOS-based images." physica status solidi (c) 11, no. 1 (December 9, 2013): 50–56. http://dx.doi.org/10.1002/pssc.201300378.

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D'Angelo, Robert, Richard Wood, Nathan Lowry, Geremy Freifeld, Haiyao Huang, Christopher D. Salthouse, Brent Hollosi, et al. "A Computationally Efficient Visual Saliency Algorithm Suitable for an Analog CMOS Implementation." Neural Computation 30, no. 9 (September 2018): 2439–71. http://dx.doi.org/10.1162/neco_a_01106.

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Computer vision algorithms are often limited in their application by the large amount of data that must be processed. Mammalian vision systems mitigate this high bandwidth requirement by prioritizing certain regions of the visual field with neural circuits that select the most salient regions. This work introduces a novel and computationally efficient visual saliency algorithm for performing this neuromorphic attention-based data reduction. The proposed algorithm has the added advantage that it is compatible with an analog CMOS design while still achieving comparable performance to existing state-of-the-art saliency algorithms. This compatibility allows for direct integration with the analog-to-digital conversion circuitry present in CMOS image sensors. This integration leads to power savings in the converter by quantizing only the salient pixels. Further system-level power savings are gained by reducing the amount of data that must be transmitted and processed in the digital domain. The analog CMOS compatible formulation relies on a pulse width (i.e., time mode) encoding of the pixel data that is compatible with pulse-mode imagers and slope based converters often used in imager designs. This letter begins by discussing this time-mode encoding for implementing neuromorphic architectures. Next, the proposed algorithm is derived. Hardware-oriented optimizations and modifications to this algorithm are proposed and discussed. Next, a metric for quantifying saliency accuracy is proposed, and simulation results of this metric are presented. Finally, an analog synthesis approach for a time-mode architecture is outlined, and postsynthesis transistor-level simulations that demonstrate functionality of an implementation in a modern CMOS process are discussed.

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Ramesh, Tatapudi, Gurugubelli Upendra, Bandaru Sravani Krishna, Sahithi Dathar, Priyankesh Sinha, Raghavendra M.N, Myla Swathi, and K. Roja Vara Lakshmi. "A comparative study to diagnose the accuracy of E-speed film, complimentary metal oxide semiconductor and storage phosphor systems in the detection of proximal caries: An in vitro study." International Journal of Dental Research 4, no. 1 (January 24, 2016): 1. http://dx.doi.org/10.14419/ijdr.v4i1.5717.

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<p><strong>Background:</strong> Dental caries is one of the most commonly encountered conditions in clinical dentistry and these lesions remain undetected when confined to the vicinity of inter-proximal surfaces. Radiography plays a key role in the detection of inter-proximal caries especially in tight contacts.</p><p><strong>Objectives:</strong> The purpose of this study was to compare the diagnostic accuracy of E-speed film, complementary metal oxide semiconductors (CMOS) and storage phosphor systems (PSP) in the detection of proximal caries of the posterior teeth.</p><p><strong>Methods:</strong> Conventional films, CMOS and PSP images were used in detecting proximal caries on mesial and distal surfaces of 63 teeth (126 surfaces). Interpretation of all digital and conventional radiographs were performed and reanalyzed by four observers. The collected data was subjected to statistical analysis using chi square test, weighed kappa statistics and spearman rank correlation coefficient.</p><p><strong>Results:</strong> The PSP images showed more accurate results in identifying normal tooth, enamel caries, dentinal caries and deep dental caries and kappa statistics had represented almost perfect reading of 0.8 – 0.9 for PSP images whereas CMOS images showed substantial reading of 0.6 – 0.7, and for IOPA images it showed moderate reading of 0.5 – 0.6, which stated that the higher inter-observer agreement was obtained for PSP images when compared with images taken by IOPA and CMOS. The intra-observer reliability by kappa statistics had shown highly significant value (0.82) in the present study.</p><p><strong>Conclusion:</strong> Conventional films, CMOS and PSP images had shown almost appropriate results in the detection of proximal caries but PSP receptors were better in disclosing the details more accurately in terms of delineating the actual extent of the lesion pertaining to their high resolution capacity and further their flexibility made them easier during handling the radiograph, when compared with that of rigid CMOS receptors.</p>

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Aydin, Kader Cesur, Oğuzhan Demirel, Gülay Altan Salli, and Mutlu Özcan. "Evaluation of Two Dental Digital Imaging Systems Based on Quality Scorings, Burn-Out Effects and Cervical Width Determination." Balkan Journal of Dental Medicine 24, no. 2 (July 1, 2020): 71–76. http://dx.doi.org/10.2478/bjdm-2020-0012.

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SummaryBackground/Aim: The aim of the present study is to evaluate diagnostic accuracy of two generic image receptors with CMOS and PSP sensors for image quality scoring (IQS), burnout incidences (BI) and cervical widths (CW) with regard to four different exposure times.Material and Methods: 43 incisor teeth within 15 paraffin block models were exposed at 4 different exposure times both for the CMOS and PSP groups, and a total number of 120 images were obtained. All images were evaluated by 3 dentomaxillofacial radiologists via 3 different criteria; IQS, BI, CW.Results: Diagnostic quality scorings between groups displayed statistically significant difference for 0,1; 0,125 and 0,16 sec exposure times. PSP group revealed higher IQS. For 0,125 and 0,16 seconds exposure times, PSP group showed higher percentages of BI. Average CW were lower in PSP group. Although no statistically significant difference was found between average CW vs. exposure times in the CMOS group; PSP group revealed significant differences among exposure times. We can state that, the PSP system displayed higher image quality so exposure times can be reduced, alas, the same conclusion is not possible with CMOS system used.Conclusions: Image quality perception is higher in PSP system we used, compared with CMOS system. PSP system display more burnout effects with increasing exposure times, while CMOS system is constant.

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Hon-Sum Wong. "Technology and device scaling considerations for CMOS imagers." IEEE Transactions on Electron Devices 43, no. 12 (1996): 2131–42. http://dx.doi.org/10.1109/16.544384.

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Lule, T., S. Benthien, H. Keller, F. Mutze, P. Rieve, K. Seibel, M. Sommer, and M. Bohm. "Sensitivity of CMOS based imagers and scaling perspectives." IEEE Transactions on Electron Devices 47, no. 11 (2000): 2110–22. http://dx.doi.org/10.1109/16.877173.

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Wang, Chun Yu, Qing Wei Dong, Yang Li, and Xin Yue Xie. "Airborne Multispectral Imager Used in the UAV." Applied Mechanics and Materials 701-702 (December 2014): 283–87. http://dx.doi.org/10.4028/www.scientific.net/amm.701-702.283.

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Under existing conditions, the use of optical lens, imaging spectrometer, and the establishment of a rectangular CMOS image sensor spectral imaging system. Wide spectrum of white LED illuminated sample, by ordinary optical imaging lens, then the multi-channel narrowband filter array on the image plane splitting, and finally by the CMOS image acquisition system, converting optical signals into electrical signals, and then converted by the analog-digital converter chip to a digital signal to the computer. Finally, computer-spectral image cube collected for processing. At the same time, the advantages of airborne multispectral imager used in the UAV trials, obtain higher picture quality, and maintain a portable, imaging speed, and further validate the reliability of the experimental system.

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Jackson, B. V., P. P. Hick, A. Buffington, M. M. Bisi, and J. M. Clover. "SMEI direct, 3-D-reconstruction sky maps, and volumetric analyses, and their comparison with SOHO and STEREO observations." Annales Geophysicae 27, no. 11 (November 2, 2009): 4097–104. http://dx.doi.org/10.5194/angeo-27-4097-2009.

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Abstract. In this paper we present the results of the analysis of the late January 2007 Coronal Mass Ejection (CME) events recorded by the Solar Mass Ejection Imager (SMEI), the Solar TErrestrial RElations Observatory (STEREO), and the SOlar and Heliospheric Observatory (SOHO) spacecraft. This period occurs when the two STEREO spacecraft views are from close to Earth, and thus the views from both SMEI and the STEREO outer Heliospheric Imagers (HI-2s) coincide. Three-dimensional (3-D) analyses derived from SMEI data show many CMEs that have also been studied by others using short-term image subtractions (image-differencing techniques). During this interval we map several CME structures that are observed in both SMEI and the STEREO-A HI instruments. SMEI brightness analyses provided by short-term image subtractions ("difference images") and, alternatively, subtractions of a mean-brightness fit over a long-time duration, both show the extents of the CMEs travelling outward above the East limb that erupted from the Sun on 24 and 25 January 2007. The SMEI 3-D-reconstructions not only enhance distinct features within the CME events, but also reconcile difference-imaging results with those where a long-term base has been removed. In the January 2007 example the structure as mapped by CME difference images traces the sharp intensity gradients at the front of the CMEs; generally brighter ejected material follows behind the location of the CME front, but shows poorly in these because of its larger angular extent. Using the long-duration background removal enables SMEI's 3-D analysis to determine a mass for this CME sequence North of the ecliptic.

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Kłosowski, Miron, and Yichuang Sun. "Fixed Pattern Noise Reduction and Linearity Improvement in Time-Mode CMOS Image Sensors." Sensors 20, no. 20 (October 20, 2020): 5921. http://dx.doi.org/10.3390/s20205921.

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In the paper, a digital clock stopping technique for gain and offset correction in time-mode analog-to-digital converters (ADCs) has been proposed. The technique is dedicated to imagers with massively parallel image acquisition working in the time mode where compensation of dark signal non-uniformity (DSNU) as well as photo-response non-uniformity (PRNU) is critical. Fixed pattern noise (FPN) reduction has been experimentally validated using 128-pixel CMOS imager. The reduction of the PRNU to about 0.5 LSB has been achieved. Linearity improvement technique has also been proposed, which allows for integral nonlinearity (INL) reduction to about 0.5 LSB. Measurements confirm the proposed approach.

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Servoli, Leonello, Fabrizio Bizzarri, and Daniele Passeri. "Continuous measurement of radiation damage of standard CMOS imagers." Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 658, no. 1 (December 2011): 137–40. http://dx.doi.org/10.1016/j.nima.2011.04.059.

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Kim, Kwang-Hyun, Gyu-Seong Cho, and Young-Hee Kim. "A CMOS Bandgap Reference Voltage Generator for a CMOS Active Pixel Sensor Imager." Transactions on Electrical and Electronic Materials 5, no. 2 (April 1, 2004): 71–75. http://dx.doi.org/10.4313/teem.2004.5.2.071.

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Meng, Xiang Ti, Qiang Huang, Xing Yu Wang, Yong Nan Zheng, Ping Fan, and Sheng Yun Zhu. "Change of Properties of CMOS Image Sensor Irradiated with 9 and 16 MeV Protons." Defect and Diffusion Forum 272 (March 2008): 7–14. http://dx.doi.org/10.4028/www.scientific.net/ddf.272.7.

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The 9 and 16 MeV proton irradiations of CMOS Image Sensor in the fluence range from 5x108 to 4x1010 cm-2 and 5x109 to 1x1013 cm-2 have been carried out respectively. The color pictures and dark output images are captured, and the average brightness of dark output images is calculated. The anti-irradiation fluence thresholds for 9 and 16 MeV protons are about 4x1010 and 5x1012cm-2, respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.

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Shang Yuanyuan, 尚媛园, 张伟功 Zhang Weigong, 宋宇 Song Yu, and 刘卉 Liu Hui. "Research on Evaluation Method of CMOS Imager." Laser & Optoelectronics Progress 47, no. 5 (2010): 051101. http://dx.doi.org/10.3788/lop47.051101.

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Centen, Peter G. M. "Next-Generation CMOS Imager for Broadcast Cameras." SMPTE Motion Imaging Journal 119, no. 8 (November 2010): 53–58. http://dx.doi.org/10.5594/j17298.

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Gu, Qun Jane, Kang Yang, Yi Xue, Zhiwei Xu, Adrian Tang, C. C. Nien, T. H. Wu, J. H. Tarng, and Mau-Chung Frank Chang. "A CMOS Integrated W-band Passive Imager." IEEE Transactions on Circuits and Systems II: Express Briefs 59, no. 11 (November 2012): 736–40. http://dx.doi.org/10.1109/tcsii.2012.2228393.

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Chien-Chang Liu and C. H. Mastrangelo. "A CMOS uncooled heat-balancing infrared imager." IEEE Journal of Solid-State Circuits 35, no. 4 (April 2000): 527–35. http://dx.doi.org/10.1109/4.839912.

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Bandyopadhyay, A., P. Hasler, and D. Anderson. "A CMOS floating-gate matrix transform imager." IEEE Sensors Journal 5, no. 3 (June 2005): 455–62. http://dx.doi.org/10.1109/jsen.2005.844336.

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Kekkonen, Jere, Mikko A. J. Finnilä, Jarkko Heikkilä, Vuokko Anttonen, and Ilkka Nissinen. "Chemical imaging of human teeth by a time-resolved Raman spectrometer based on a CMOS single-photon avalanche diode line sensor." Analyst 144, no. 20 (2019): 6089–97. http://dx.doi.org/10.1039/c9an01136f.

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Lee, Jimin, Sang-Hwan Kim, Hyeunwoo Kwen, Juneyoung Jang, Seunghyuk Chang, JongHo Park, Sang-Jin Lee, and Jang-Kyoo Shin. "CMOS Depth Image Sensor with Offset Pixel Aperture Using a Back-Side Illumination Structure for Improving Disparity." Sensors 20, no. 18 (September 9, 2020): 5138. http://dx.doi.org/10.3390/s20185138.

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This paper presents a CMOS depth image sensor with offset pixel aperture (OPA) using a back-side illumination structure to improve disparity. The OPA method is an efficient way to obtain depth information with a single image sensor without additional external factors. Two types of apertures (i.e., left-OPA (LOPA) and right-OPA (ROPA)) are applied to pixels. The depth information is obtained from the disparity caused by the phase difference between the LOPA and ROPA images. In a CMOS depth image sensor with OPA, disparity is important information. Improving disparity is an easy way of improving the performance of the CMOS depth image sensor with OPA. Disparity is affected by pixel height. Therefore, this paper compared two CMOS depth image sensors with OPA using front-side illumination (FSI) and back-side illumination (BSI) structures. As FSI and BSI chips are fabricated via different processes, two similar chips were used for measurement by calculating the ratio of the OPA offset to pixel size. Both chips were evaluated for chief ray angle (CRA) and disparity in the same measurement environment. Experimental results were then compared and analyzed for the two CMOS depth image sensors with OPA.

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Gouveia, Luiz Carlos Paiva, and Bhaskar Choubey. "Advances on CMOS image sensors." Sensor Review 36, no. 3 (June 20, 2016): 231–39. http://dx.doi.org/10.1108/sr-11-2015-0189.

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Purpose The purpose of this paper is to offer an introduction to the technological advances of the complementary metal–oxide–semiconductor (CMOS) image sensors along the past decades. The authors review some of those technological advances and examine potential disruptive growth directions for CMOS image sensors and proposed ways to achieve them. Design/methodology/approach Those advances include breakthroughs on image quality such as resolution, capture speed, light sensitivity and color detection and advances on the computational imaging. Findings The current trend is to push the innovation efforts even further, as the market requires even higher resolution, higher speed, lower power consumption and, mainly, lower cost sensors. Although CMOS image sensors are currently used in several different applications from consumer to defense to medical diagnosis, product differentiation is becoming both a requirement and a difficult goal for any image sensor manufacturer. The unique properties of CMOS process allow the integration of several signal processing techniques and are driving the impressive advancement of the computational imaging. Originality/value The authors offer a very comprehensive review of methods, techniques, designs and fabrication of CMOS image sensors that have impacted or will impact the images sensor applications and markets.

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Pei, Yang, Xiangyang Luo, Yi Zhang, and Liyan Zhu. "Multiple Images Steganography of JPEG Images Based on Optimal Payload Distribution." Computer Modeling in Engineering & Sciences 125, no. 1 (2020): 417–36. http://dx.doi.org/10.32604/cmes.2020.010636.

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Servoli, L., M. Biasini, P. Placidi, D. Passeri, L. Fano, and B. Checcucci. "114 CMOS IMAGERS AS DOSIMETRIC DEVICES IN INTERVENTIONAL RADIOLOGY PROCEDURES." Radiotherapy and Oncology 102 (March 2012): S46—S47. http://dx.doi.org/10.1016/s0167-8140(12)70087-7.

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Chang, Hsiu-Ming Chang, Jiun-Lang Huang, Ding-Ming Kwai, Kwang-Ting Cheng, and Cheng-Wen Wu. "Low-Cost Error Tolerance Scheme for 3-D CMOS Imagers." IEEE Transactions on Very Large Scale Integration (VLSI) Systems 21, no. 3 (March 2013): 465–74. http://dx.doi.org/10.1109/tvlsi.2012.2190148.

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Servoli, L., D. Biagetti, D. Passeri, and E. Spanti Gattuso. "Characterization of standard CMOS pixel imagers as ionizing radiation detectors." Journal of Instrumentation 5, no. 07 (July 22, 2010): P07003. http://dx.doi.org/10.1088/1748-0221/5/07/p07003.

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Organtini, Paolo, and Felice Russo. "Forecast of CMOS Imagers Yield Learning by the Gompertz Model." IEEE Transactions on Semiconductor Manufacturing 26, no. 3 (August 2013): 393–99. http://dx.doi.org/10.1109/tsm.2013.2263887.

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Santos, Patrick M., Davies W. L. Monteiro, and Luciana P. Salles. "Current-Mode Self-Amplified CMOS Sensor Intended for 2D Temperature Microgradients Measurement and Imaging." Sensors 20, no. 18 (September 8, 2020): 5111. http://dx.doi.org/10.3390/s20185111.

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This paper presents the design of a current-mode CMOS self-amplified imager operating in dark conditions, for thermal imaging, which provides an innovative solution for precision thermal contact mapping. Possible applications of this imager range from 3D CMOS integrated circuits to the study of in-vivo biological samples. It can provide a thermal map, static or dynamic, for the measurement of temperature microgradients. Some adaptations are required for the optimization of this self-amplified image sensor since it responds exclusively to the dark currents of the photodiodes throughout the array. The sensor is designed in a standard CMOS process and requires no post-processing steps. The optimized image sensor operates with integration times as low as one μs and can achieve both SNR and dynamic range compatible to those of sensors available on the market, estimated as 87dB and 75dB, respectively; noise equivalent temperature difference can be as low as 10mK; and detection errors as low as ±1%. Furthermore, under optimal conditions the self-amplification process enables a simple form of CDS, enhancing the overall sensor noise performance.

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Jendernalik, Waldemar, Jacek Jakusz, Grzegorz Blakiewicz, Stanisław Szczepański, and Robert Piotrowski. "Characteristics of an Image Sensor with Early-Vision Processing Fabricated in Standard 0.35 μm Cmos Technology." Metrology and Measurement Systems 19, no. 2 (January 1, 2012): 191–202. http://dx.doi.org/10.2478/v10178-012-0017-8.

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Characteristics of an Image Sensor with Early-Vision Processing Fabricated in Standard 0.35 μm Cmos TechnologyThe article presents measurement results of prototype integrated circuits for acquisition and processing of images in real time. In order to verify a new concept of circuit solutions of analogue image processors, experimental integrated circuits were fabricated. The integrated circuits, designed in a standard 0.35 μm CMOS technology, contain the image sensor and analogue processors that perform low-level convolution-based image processing algorithms. The prototype with a resolution of 32 × 32 pixels allows the acquisition and processing of images at high speed, up to 2000 frames/s. Operation of the prototypes was verified in practice using the developed software and a measurement system based on a FPGA platform.

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Suarez, Manuel, Víctor M. Brea, J. Fernandez-Berni, R. Carmona-Galan, G. Linan, D. Cabello, and Ángel Rodriguez-Vazquez. "CMOS-3D Smart Imager Architectures for Feature Detection." IEEE Journal on Emerging and Selected Topics in Circuits and Systems 2, no. 4 (December 2012): 723–36. http://dx.doi.org/10.1109/jetcas.2012.2223552.

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Kim, Kwang Hyun, and Young Soo Kim. "Scintillator and CMOS APS Imager for Radiography Conditions." IEEE Transactions on Nuclear Science 55, no. 3 (June 2008): 1327–32. http://dx.doi.org/10.1109/tns.2008.922214.

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Shafie, S., F. A. M. Fodzi, L. Q. Tung, D. X. Lioe, I. A. Halin, W. Z. W. Hasan, and H. Jaafar. "Development of CMOS Imager Block for Capsule Endoscope." Journal of Physics: Conference Series 495 (April 4, 2014): 012005. http://dx.doi.org/10.1088/1742-6596/495/1/012005.

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Mehta, S., and R. Etienne-Cummings. "Normal optical flow measurement on CMOS APS imager." Electronics Letters 41, no. 13 (2005): 732. http://dx.doi.org/10.1049/el:20058433.

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37

HOPKINSON, G. R., and A. MOHAMMADZADEH. "RADIATION EFFECTS IN CHARGE-COUPLED DEVICE (CCD) IMAGERS AND CMOS ACTIVE PIXEL SENSORS." International Journal of High Speed Electronics and Systems 14, no. 02 (June 2004): 419–43. http://dx.doi.org/10.1142/s0129156404002442.

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This review concerns radiation effects in silicon Charge-Coupled Devices (CCDs) and CMOS active pixel sensors (APSs), both of which are used as imagers in the visible region. Permanent effects, due to total ionizing dose and displacement damage, are discussed in detail, with a particular emphasis on the space environment. In addition, transient effects are briefly summarized. Implications for ground testing, effects mitigation and device hardening are also considered. The review is illustrated with results from recent ground testing.

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Hu, Changmiao, Yang Bai, and Ping Tang. "DENOISING ALGORITHM FOR THE PIXEL-RESPONSE NON-UNIFORMITY CORRECTION OF A SCIENTIFIC CMOS UNDER LOW LIGHT CONDITIONS." ISPRS - International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences XLI-B3 (June 17, 2016): 749–53. http://dx.doi.org/10.5194/isprsarchives-xli-b3-749-2016.

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We present a denoising algorithm for the pixel-response non-uniformity correction of a scientific complementary metal–oxide–semiconductor (CMOS) image sensor, which captures images under extremely low-light conditions. By analyzing the integrating sphere experimental data, we present a pixel-by-pixel flat-field denoising algorithm to remove this fixed pattern noise, which occur in low-light conditions and high pixel response readouts. The response of the CMOS image sensor imaging system to the uniform radiance field shows a high level of spatial uniformity after the denoising algorithm has been applied.

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Hu, Changmiao, Yang Bai, and Ping Tang. "DENOISING ALGORITHM FOR THE PIXEL-RESPONSE NON-UNIFORMITY CORRECTION OF A SCIENTIFIC CMOS UNDER LOW LIGHT CONDITIONS." ISPRS - International Archives of the Photogrammetry, Remote Sensing and Spatial Information Sciences XLI-B3 (June 17, 2016): 749–53. http://dx.doi.org/10.5194/isprs-archives-xli-b3-749-2016.

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Abstract:

We present a denoising algorithm for the pixel-response non-uniformity correction of a scientific complementary metal–oxide–semiconductor (CMOS) image sensor, which captures images under extremely low-light conditions. By analyzing the integrating sphere experimental data, we present a pixel-by-pixel flat-field denoising algorithm to remove this fixed pattern noise, which occur in low-light conditions and high pixel response readouts. The response of the CMOS image sensor imaging system to the uniform radiance field shows a high level of spatial uniformity after the denoising algorithm has been applied.

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40

Jendernalik, W., J. Jakusz, G. Blakiewicz, R. Piotrowski, and S. Szczepański. "CMOS realisation of analogue processor for early vision processing." Bulletin of the Polish Academy of Sciences: Technical Sciences 59, no. 2 (June 1, 2011): 141–47. http://dx.doi.org/10.2478/v10175-011-0018-x.

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CMOS realisation of analogue processor for early vision processing The architecture concept of a high-speed low-power analogue vision chip, which performs low-level real-time image algorithms is presented. The proof-of-concept prototype vision chip containing 32 × 32 photosensor array and 32 analogue processors is fabricated using a 0.35 μm CMOS technology. The prototype can be configured to register and process images with very high speed, reaching 2000 frames per second, or achieve very low power consumption, several μW. Finally, the experimental results are presented and discussed.

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41

Zhang, Weixing, Anna K. Liljedahl, Mikhail Kanevskiy, Howard E. Epstein, Benjamin M. Jones, M. Torre Jorgenson, and Kelcy Kent. "Transferability of the Deep Learning Mask R-CNN Model for Automated Mapping of Ice-Wedge Polygons in High-Resolution Satellite and UAV Images." Remote Sensing 12, no. 7 (March 28, 2020): 1085. http://dx.doi.org/10.3390/rs12071085.

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State-of-the-art deep learning technology has been successfully applied to relatively small selected areas of very high spatial resolution (0.15 and 0.25 m) optical aerial imagery acquired by a fixed-wing aircraft to automatically characterize ice-wedge polygons (IWPs) in the Arctic tundra. However, any mapping of IWPs at regional to continental scales requires images acquired on different sensor platforms (particularly satellite) and a refined understanding of the performance stability of the method across sensor platforms through reliable evaluation assessments. In this study, we examined the transferability of a deep learning Mask Region-Based Convolutional Neural Network (R-CNN) model for mapping IWPs in satellite remote sensing imagery (~0.5 m) covering 272 km2 and unmanned aerial vehicle (UAV) (0.02 m) imagery covering 0.32 km2. Multi-spectral images were obtained from the WorldView-2 satellite sensor and pan-sharpened to ~0.5 m, and a 20 mp CMOS sensor camera onboard a UAV, respectively. The training dataset included 25,489 and 6022 manually delineated IWPs from satellite and fixed-wing aircraft aerial imagery near the Arctic Coastal Plain, northern Alaska. Quantitative assessments showed that individual IWPs were correctly detected at up to 72% and 70%, and delineated at up to 73% and 68% F1 score accuracy levels for satellite and UAV images, respectively. Expert-based qualitative assessments showed that IWPs were correctly detected at good (40–60%) and excellent (80–100%) accuracy levels for satellite and UAV images, respectively, and delineated at excellent (80–100%) level for both images. We found that (1) regardless of spatial resolution and spectral bands, the deep learning Mask R-CNN model effectively mapped IWPs in both remote sensing satellite and UAV images; (2) the model achieved a better accuracy in detection with finer image resolution, such as UAV imagery, yet a better accuracy in delineation with coarser image resolution, such as satellite imagery; (3) increasing the number of training data with different resolutions between the training and actual application imagery does not necessarily result in better performance of the Mask R-CNN in IWPs mapping; (4) and overall, the model underestimates the total number of IWPs particularly in terms of disjoint/incomplete IWPs.

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Amirany, Abdolah, and Ramin Rajaei. "Nonvolatile, Spin-Based, and Low-Power Inexact Full Adder Circuits for Computing-in-Memory Image Processing." SPIN 09, no. 03 (September 2019): 1950013. http://dx.doi.org/10.1142/s2010324719500139.

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Deep submicron conventional complementary metal oxide semiconductor (CMOS) technology is facing various issues such as high static power consumption due to the increasing leakage currents. In recent years, spin-based technologies like magnetic tunnel junctions (MTJ) have emerged and shown some fascinating features to overcome the aforesaid issues of CMOS technology. The hybrid MTJ/CMOS circuits offer low power consumption, nonvolatility, and high performance. This paper proposes two novel hybrid MTJ/CMOS approximate full-adder circuits (AXMA) for low power approximate computing-in-memory architectures. The proposed AXMAs offer low area, high sensing speed, considerable lower energy consumption, and the lowest power delay product (PDP) than the considered antecedent counterparts. The proposed AXMAs also introduce the advantage of full nonvolatility to the systems. This feature allows the system to be powered off during the idle modes in order to reduce the static power without the need for any retention parts or loss of data. Applications of the proposed AXMAs in digital image processing and their effect on the quality of images considering some relevant metrics like peak signal-to-noise ratio (PSNR) and mean structural similarity (MSSIM) are also investigated using the MATLAB software.

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Theil, Jeremy A., Rick Snyder, David Hula, Kirk Lindahl, Homayoon Haddad, and Jim Roland. "a-Si:H photodiode technology for advanced CMOS active pixel sensor imagers." Journal of Non-Crystalline Solids 299-302 (April 2002): 1234–39. http://dx.doi.org/10.1016/s0022-3093(01)01144-9.

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Lin, C. S. S., B. P. Mathur, and M. C. F. Chang. "Analytical charge collection and MTF model for photodiode-based CMOS imagers." IEEE Transactions on Electron Devices 49, no. 5 (May 2002): 754–61. http://dx.doi.org/10.1109/16.998581.

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Meroli, S., D. Passeri, L. Servoli, and A. Angelucci. "Analysis of the performance of CMOS APS imagers after proton damage." Journal of Instrumentation 8, no. 02 (February 4, 2013): C02002. http://dx.doi.org/10.1088/1748-0221/8/02/c02002.

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Servoli, L., and P. Tucceri. "Use of CMOS imagers to measure high fluxes of charged particles." Journal of Instrumentation 11, no. 03 (March 15, 2016): P03014. http://dx.doi.org/10.1088/1748-0221/11/03/p03014.

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Vanyushin, I. V., V. A. Zimoglyad, V. A. Gergel’, and Yu I. Tishin. "CMOS Color-area matrix imagers: State of the art and prospects." Journal of Communications Technology and Electronics 56, no. 3 (March 2011): 351–56. http://dx.doi.org/10.1134/s1064226911030132.

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Rocha, R. P., J. P. Carmo, and J. H. Correia. "Fabrication Methodology of Microlenses for Stereoscopic Imagers Using Standard CMOS Process." ECS Transactions 49, no. 1 (August 30, 2012): 323–30. http://dx.doi.org/10.1149/04901.0323ecst.

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Sandhu, Tejinder Singh, and Orly Yadid Pecht. "New Memory Architecture for Rolling Shutter Wide Dynamic Range CMOS Imagers." IEEE Sensors Journal 12, no. 4 (April 2012): 767–72. http://dx.doi.org/10.1109/jsen.2011.2132702.

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50

Hatzistratis, D., G. Theodoratos, E. Zervakis, D. Loukas, and C. P. Lambropoulos. "CMOS Pixel Spectroscopic Circuits for Cd(Zn)Te Gamma Ray Imagers." MATEC Web of Conferences 41 (2016): 03002. http://dx.doi.org/10.1051/matecconf/20164103002.

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