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Journal articles on the topic 'In(Ga)As quantum dots'

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Published: 4 June 2021

Last updated: 14 February 2022

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1

HUANG, DAMING, MICHAEL A. RESHCHIKOV, and HADIS MORKOÇ. "GROWTH, STRUCTURES, AND OPTICAL PROPERTIES OF III-NITRIDE QUANTUM DOTS." International Journal of High Speed Electronics and Systems 12, no. 01 (March 2002): 79–110. http://dx.doi.org/10.1142/s0129156402001137.

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This article reviews the advances in the growth of III-nitride quantum dots achieved in the last few years and their unique properties. The growth techniques and the strcutural and optical properties associated with quantum confinement, strain, and polarization in GaN/Al x Ga 1-x N and In x Ga 1-x N/GaN quantum dots are discussed in detail.

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2

Häusler, I., H. Kirmse, R. Otto, W. Neumann, L. Müller-Kirsch, D. Bimberg, M. Lentzen, and K. Urban. "TEM investigations of Ga(Sb,As) quantum dots grown on a seed layer of (In,Ga)As quantum dots." Microscopy and Microanalysis 9, S03 (September 2003): 212–13. http://dx.doi.org/10.1017/s1431927603022086.

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3

TANG, XIAOHONG, ZONGYOU YIN, and BAOLIN ZHANG. "MOVPE GROWTH OF THE InP BASED MID-IR EMISSION QUANTUM DOT STRUCTURES." Journal of Molecular and Engineering Materials 01, no. 02 (June 2013): 1350002. http://dx.doi.org/10.1142/s2251237313500020.

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In this paper, semiconductor quantum dot structures for mid-infrared emission were self-assembled on InP substrate by using metal–organic vapor phase epitaxy growth. The InAs quantum dots grown at different conditions have been investigated. To improve the grown quantum dot's shape, the dot density and the dot size uniformity, a two-step growth method has been used and investigated. By changing the composition of the In x Ga 1-x As matrix layer of the InAs / In x Ga 1-x As / InP quantum dot structure, emission wavelength of the InAs quantum dot structure has been extended to the longest > 2.35 μm measured at 77 K. For the narrower bandgap semiconductor InAsSb quantum dots, the emission wavelength was measured at > 2.8 μm.

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4

Porras-Montenegro, N., and S. T. Pe´rez-Merchancano. "Hydrogenic impurities in GaAs-(Ga,Al)As quantum dots." Physical Review B 46, no. 15 (October 15, 1992): 9780–83. http://dx.doi.org/10.1103/physrevb.46.9780.

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5

Zabel, T., C. Reuterskiöld Hedlund, O. Gustafsson, A. Karim, J. Berggren, Q. Wang, C. Ernerheim-Jokumsen, et al. "Auger recombination in In(Ga)Sb/InAs quantum dots." Applied Physics Letters 106, no. 1 (January 5, 2015): 013103. http://dx.doi.org/10.1063/1.4905455.

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6

Sergent, S., J. C. Moreno, E. Frayssinet, Y. Laaroussi, S. Chenot, J. Renard, D. Sam-Giao, et al. "GaN quantum dots in (Al,Ga)N-based Microdisks." Journal of Physics: Conference Series 210 (February 1, 2010): 012005. http://dx.doi.org/10.1088/1742-6596/210/1/012005.

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7

Chu, L., A. Zrenner, M. Bichler, G. Böhm, and G. Abstreiter. "Raman spectroscopy of In(Ga)As/GaAs quantum dots." Applied Physics Letters 77, no. 24 (December 11, 2000): 3944–46. http://dx.doi.org/10.1063/1.1333398.

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8

Elmaghraoui, D., M. Triki, S. Jaziri, G. Muñoz-Matutano, M. Leroux, and J. Martinez-Pastor. "Excitonic complexes in GaN/(Al,Ga)N quantum dots." Journal of Physics: Condensed Matter 29, no. 10 (February 1, 2017): 105302. http://dx.doi.org/10.1088/1361-648x/aa57d5.

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9

Деребезов, И. А., В. А. Гайслер, А. В. Гайслер, Д. В. Дмитриев, А. И. Торопов, M. von Helversen, C. de la Haye, S. Bounouar, and S. Reitzenstein. "Неклассические источники света на основе селективно позиционированных микролинзовых структур и (111) In(Ga)As квантовых точек." Физика и техника полупроводников 53, no. 10 (2019): 1338. http://dx.doi.org/10.21883/ftp.2019.10.48286.32.

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Hybrid microcavity for single quantum dot based emitters has been developed and realized. The microcavity consists of semiconductor distributed Bragg reflector and microlens, which is selectively positioned over a single (111) In(Ga)As quantum dot. We have demonstrated pure single photon emission with g(2)(0) = 0.07. The fine structure of exciton states of (111) In(Ga)As quantum dots is studied. It is shown that the splitting of exciton states is comparable with the natural width of exciton lines, which is of great interest for the design of emitters of pairs of entangled photons on the basis of these quantum dots.

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10

He, Xiaowu, Yifeng Song, Ying Yu, Ben Ma, Zesheng Chen, Xiangjun Shang, Haiqiao Ni, et al. "Quantum light source devices of In(Ga)As semiconductorself-assembled quantum dots." Journal of Semiconductors 40, no. 7 (July 2019): 071902. http://dx.doi.org/10.1088/1674-4926/40/7/071902.

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11

Kim, Bu-Yong, Jong-Hoon Kim, Ki-Heon Lee, Eun-Pyo Jang, Chang-Yeol Han, Jung-Ho Jo, Ho Seong Jang, and Heesun Yang. "Synthesis of highly efficient azure-to-blue-emitting Zn–Cu–Ga–S quantum dots." Chemical Communications 53, no. 29 (2017): 4088–91. http://dx.doi.org/10.1039/c7cc00952f.

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12

IHN, THOMAS, CHRISTOPH ELLENBERGER, KLAUS ENSSLIN, CONSTANTINE YANNOULEAS, UZI LANDMAN, DAN C. DRISCOLL, and ART C. GOSSARD. "QUANTUM DOTS BASED ON PARABOLIC QUANTUM WELLS: IMPORTANCE OF ELECTRONIC CORRELATIONS." International Journal of Modern Physics B 21, no. 08n09 (April 10, 2007): 1316–25. http://dx.doi.org/10.1142/s0217979207042781.

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We present measurements and theoretical interpretation of the magnetic field dependent excitation spectra of a two-electron quantum dot. The quantum dot is based on an Al x Ga 1-x As parabolic quantum well with effective g⋆-factor close to zero. Results of tunneling spectroscopy of the four lowest states are compared to exact diagonalization calculations and a generalized Heitler–London approximation and good agreement is found. Electronic correlations, associated with the formation of an H 2-type Wigner molecule, turn out to be very important in this system.

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13

YAKOVLEV, D. R., A. GREILICH, M. BAYER, and I. A. YUGOVA. "ELECTRON SPIN COHERENCE IN SINGLY CHARGED QUANTUM DOTS." International Journal of Modern Physics B 23, no. 12n13 (May 20, 2009): 2813–25. http://dx.doi.org/10.1142/s0217979209062396.

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Electron spin coherence is examined experimentally and theoretically in singly charged ( In , Ga ) As / GaAs quantum dots. Time-resolved pump-probe Faraday rotation technique is used to examine fine structure and Zeeman splitting of excitons and resident electrons. Spin dephasing and spin coherence times of resident electrons have been measured in the regime of mode-locking of spin coherency.

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14

Edwina, Uzunuigbe O., Ayabei Kiplagat, Nicole R. S. Sibuyi, Mervin Meyer, Abidemi Paul Kappo, and Martin O. Onani. "Synthesis and cytotoxic evaluation of gum arabic surface modified cadmium telluride quantum dots." Materials Express 10, no. 5 (May 1, 2020): 611–19. http://dx.doi.org/10.1166/mex.2020.1675.

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Water-soluble cadmium telluride (CdTe) quantum dots (QDs) were capped with gum Arabic (GA) is a non-toxic, water-soluble glycoprotein polymer commonly used in the food and pharmaceutical industries. The GA was used to stabilise cadmium telluride quantum dots (GA-QDs) and provides functional groups for other molecules such as nucleic acids, peptides and antibodies to be attached to the QDs for biological and biomedical appli- cations. In this study, the GA was used to cap and stabilise QDs using two different methods. These QDs were characterised using Ultraviolet-visible (UV-vis) and Photoluminescence (PL) spectroscopy, X-powder ray diffraction (XRD), High-resolution transmission electron microscopy, zeta potential and particle size distribu- tions. Cytotoxicity of these QDs was also investigated using four different human cell lines; HeLa, MCF-7, PC-3 and U87 cancer cells. The QDs-MPA was capped with 3-mercaptopropionic acid, QDs-GA2 was stabilized and capped with GA at 60 °C for two hours, and QDs-GA12 was stabilized and capped with GA for twelve hours at room temperature (25 °C) with continuous stirring; These QDs were found to be highly luminescent with PL values of 675 nm, 678 nm and 677 nm respectively. The average polydispersity index (PDI) were 0.36 ± 0.02, 0.27 ± 0.02, 0.35 ± 0.01 for QDs-MPA, QDs-GA2 and QDs-GA12, respectively. The average particles size from HRTEM, XRD and hydrodynamic size showed that the QDs-GA have bigger particles sizes; (56.12 nm ± 1.14), (68.69 nm ± 2.08) and (77.85 nm ± 1.69) for QDs-MPA, QD-GA2 and QD-GA12 respectively. Cytotoxicity studies of these QDs were carried out using WST-1 cell proliferation assay on four different tumour cell line. The results showed that these cells were over 50 per cent viable and the QDs-GA capped had higher cell percentage viability.

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15

SHRIVASTAVA, KESHAV N. "LANDE'S g VALUE IN QUANTUM DOTS IN AlxGa1-xAs." International Journal of Nanoscience 10, no. 03 (June 2011): 507–14. http://dx.doi.org/10.1142/s0219581x11008277.

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The light-hole g value in Al x Ga 1-x As is found to show scaling behavior as a function of quantum well width, g ≃( well width )-β with β ≃ 0.3. When x is varied to change the Ga concentration there is a critical value of the concentration of 1 - x0 = 0.88, at which the g value vanishes, g⊥ = 0. There is a scaling behavior, g⊥ = 2[1 - (1 - x)/(1 - xo)]y. The g⊥ data varies from about -0.42 for x = 0 to 0.60 for x = 0.374. Hence, the large variations in the g values are due to a phase transition. Similar results for InAs are also discussed. The contribution to the g value arising from the Calogero-type potential is deduced, which gives rise to wave functions in the form of Jack polynomials.

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16

Bennett, Brian R., B. V. Shanabrook, and R. Magno. "Phonons in self‐assembled (In,Ga,Al)Sb quantum dots." Applied Physics Letters 68, no. 7 (February 12, 1996): 958–60. http://dx.doi.org/10.1063/1.116111.

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17

Elborg, Martin, Takeshi Noda, Takaaki Mano, Masafumi Jo, Yoshiki Sakuma, and Kazuaki Sakoda. "Self-assembly of Ga droplets attached to GaAs quantum dots." Journal of Crystal Growth 378 (September 2013): 53–56. http://dx.doi.org/10.1016/j.jcrysgro.2012.12.155.

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18

Bayer, M., A. Forchel, P. Hawrylak, S. Fafard, and G. Narvaez. "Excitonic States in In(Ga)As Self-Assembled Quantum Dots." physica status solidi (b) 224, no. 2 (March 2001): 331–36. http://dx.doi.org/10.1002/1521-3951(200103)224:2<331::aid-pssb331>3.0.co;2-a.

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19

Gradkowski, Kamil, Tomasz J. Ochalski, David P. Williams, Sorcha B. Healy, Jun Tatebayashi, Ganesh Balakrishnan, Eoin P. O'Reilly, Guillaume Huyet, and Diana L. Huffaker. "Coulomb effects in type-II Ga(As)Sb quantum dots." physica status solidi (b) 246, no. 4 (April 2009): 752–55. http://dx.doi.org/10.1002/pssb.200880630.

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20

Loeber, Thomas Henning, Eric Alexander Hein, Dirk Hoffmann, Carina Heisel, and Henning Fouckhardt. "Generation of Dense Lying Ga(As)Sb Quantum Dots for Efficient Quantum Dot Lasers." Advanced Materials Research 684 (April 2013): 285–89. http://dx.doi.org/10.4028/www.scientific.net/amr.684.285.

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Two different approaches are pursued to realize densely packed gallium (arsenic) antimonide (Ga(As)Sb) quantum dots (QDs) for efficient QD lasers. In the first method nano¬structures are realized by self-organization using mask-less dry-etching. GaSb cone structures are achieved with a maximum density of 1.2 ∙ 1011 cm-2. During etching a 5 nm thick amor¬phous Ga layer is formed, also the surface oxidizes immediately under atmosphere, and as a consequence the dots are optoelectronically inactive, thus no photoluminescence (PL) can be achieved. Several attempts are made to revoke these effects, but the nanostructures stay inactive. In the second approach self-assembled optoelectronically active GaAsSb QDs are grown on GaAs in Stranski-Krastanov mode. With these QDs efficient lasers are grown, exemplarily with an emission wavelength around 900 nm. In pulsed mode a minimum thres¬hold current density of jth = 121.7 A/cm2 and a maximum in differential quantum effi¬ciency of ηd = 0.66 are measured at T = 130 K. The internal quantum efficiency is ηi = 0.76 with internal losses of αi = 4.86 cm-1.

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21

SONG, HEON, R. NAVAMATHAVAN, SEONG-MUK JEONG, SEON-HO LEE, JIN-SU KIM, KYEONG-WON SEOL, DONG-WOOK KIM, and CHEUL-RO LEE. "EFFECT OF CAPPING LAYER ON InxGa1-xN QUANTUM DOTS GROWN USING NNAD METHOD BY MOCVD." International Journal of Nanoscience 08, no. 01n02 (February 2009): 197–201. http://dx.doi.org/10.1142/s0219581x09005876.

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In x Ga 1-x N quantum dots (QDs) were grown on GaN epitaxy using nitridation of nano-alloyed droplet (NNAD) method by metal-organic chemical vapor deposition (MOCVD) system. Before the In x Ga 1-x N QDs formation, In + Ga droplets were initially formed by the flow of TMI and TMG, which acts as a nucleation seed for the QDs growth. Density of the alloy droplets was increased with the increasing flow rate; however, droplet size was scarcely changed about 100–200 nm by flow rate. And In x Ga 1-x N QDs size can be easily changed by controlling the nitridation time or various factors. Also, the influence of GaN capping layer on the properties of In x Ga 1-x N QDs was discussed.

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22

Babenko, Ia A., I. A. Yugova, S. V. Poltavtsev, M. Salewski, I. A. Akimov, M. Kamp, S. Hofling, D. R. Yakovlev, and M. Bayer. "Photon echo from an ensemble of (In, Ga)As quantum dots." Физика и техника полупроводников 52, no. 4 (2018): 485. http://dx.doi.org/10.21883/ftp.2018.04.45834.23.

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AbstractPhoton echo from trions and excitons in (In,Ga)As/GaAs quantum dots was studied theoretically and experimentally. Theoretical analysis allowed us to distinguish between photon echo signals from excitons and trions measured in the same range of wavelength using different polarization configurations of laser excitation. The theoretical predictions are in good agreement with the experimental data.

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23

Pan, Dong, Jian Xu, Elias Towe, Qin Xu, and J. W. Hsu. "Self-organization of (In,Ga)As/GaAs quantum dots on relaxed (In,Ga)As films." Applied Physics Letters 73, no. 15 (October 12, 1998): 2164–66. http://dx.doi.org/10.1063/1.122410.

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24

Bennett, B. R., B. V. Shanabrook, E. R. Glaser, R. Magno, and M. E. Twigg. "Composition and strain of self-assembled (In,Ga,Al)Sb/(Ga,Al)As quantum dots." Superlattices and Microstructures 21, no. 2 (March 1997): 267–72. http://dx.doi.org/10.1006/spmi.1996.0195.

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25

Jo, Dae-Yeon, and Heesun Yang. "Synthesis of highly white-fluorescent Cu–Ga–S quantum dots for solid-state lighting devices." Chemical Communications 52, no. 4 (2016): 709–12. http://dx.doi.org/10.1039/c5cc07968c.

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26

Kunrugsa, Maetee, Somsak Panyakeow, and Somchai Ratanathammaphan. "Type-II GaSb/GaAs Nanostructures Grown by Droplet Epitaxy with Various Ga Amounts." Advanced Materials Research 1131 (December 2015): 60–63. http://dx.doi.org/10.4028/www.scientific.net/amr.1131.60.

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We study the GaSb/GaAs nanostructures (NSs) grown by droplet epitaxy technique with various Ga amounts. Ga amount deposited on the GaAs (001) substrate was varied between 3-5 ML to form the different size and density of liquid Ga droplets. The Sb flux was subsequently irradiated to crystallize the droplets. Morphology of GaSb NSs was investigated by atomic force microscopy (AFM). Quantum rings were obtained after crystallizing 3-ML Ga droplets, whereas some kind of quantum dots were formed after crystallizing 4-and 5-ML Ga droplets. The formation mechanisms leading to the different structure are discussed. The photoluminescence (PL) measurement was performed to examine the optical properties of GaSb/GaAs NSs.

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27

Saidi, Faouzi, Mouna Bennour, Lotfi Bouzaïene, Larbi Sfaxi, and Hassen Maaref. "Strain Effects on Optical Properties of (In,Ga)As-Capped InAs Quantum Dots Grown by Molecular Beam Epitaxy on GaAs (113)A Substrate." International Journal of Spectroscopy 2011 (October 31, 2011): 1–5. http://dx.doi.org/10.1155/2011/527642.

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We have investigated the optical properties of InAs/GaAs (113)A quantum dots grown by molecular beam epitaxy (MBE) capped by (In,Ga)As. Reflection high-energy electron diffraction (RHEED) is used to investigate the formation process of InAs quantum dots (QDs). A broadening of the PL emission due to size distribution of the dots, when InAs dots are capped by GaAs, was observed. A separation between large and small quantum dots, when they are encapsulated by InGaAs, was shown due to hydrostatic and biaxial strain action on large and small dots grown under specifically growth conditions. The PL polarization measurements have shown that the small dots require an elongated form, but the large dots present a quasi-isotropic behavior.

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28

KRYZHANOVSKAYA, N. V., A. G. GLADYSHEV, S. A. BLOKHIN, A. P. VASIL'EV, E. S. SEMENOVA, A. E. ZHUKOV, M. V. MAXIMOV, et al. "HIGH TEMPERATURE STABILITY OF OPTICAL PROPERTIES OF InAs QUANTUM DOTS REALIZED BY CONTROLLING OF QUANTUM DOTS ELECTRONIC SPECTRUM." International Journal of Nanoscience 06, no. 03n04 (June 2007): 283–86. http://dx.doi.org/10.1142/s0219581x07004742.

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The optical properties of InAs /( Al ) GaAs quantum dots (QDs) overgrowth by thin AlAs / InAlAs layers are studied as a function of temperature from 10 to 500 K. The QDs emit at 1.27 μm at room temperature. It is shown that the QD energetic spectrum can be tuned by overgrowth of AlAs / InAlAs to provide high temperature stability of the QDs optical properties. Transport of carriers between neighboring QDs is absent, and the carrier distribution remains nonthermal up to room temperature. It is shown that suppression of the thermal escaping of the carriers from QDs is conditioned by high energy separation between ground and excited states, absence of wetting layer level, and increase of carrier localization energy in QDs in case of the Al 0.3 Ga 0.7 As matrix.

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29

Niculescu, Ecaterina C., and Ana Niculescu. "Donor States in Spherical GaAs-Ga1-xAlxAs Quantum Dots." Modern Physics Letters B 11, no. 15 (June 30, 1997): 673–79. http://dx.doi.org/10.1142/s0217984997000827.

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The effect of the central cell correction on the binding energies of shallow donors in a spherical GaAs-Ga 1-x Al x As quantum dot is studied. The effective-mass approximation within a variational scheme is adopted and central cell corrections are calculated by using a Coulomb potential modified with an adjustable parameter. For small values of the radius of the dot large corrections are obtained for the shallow donors studied.

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30

Babenko, Ia A., I. A. Yugova, S. V. Poltavtsev, M. Salewski, I. A. Akimov, M. Kamp, S. Höfling, D. R. Yakovlev, and M. Bayer. "Photon Echo from an Ensemble of (In,Ga)As Quantum Dots." Semiconductors 52, no. 4 (April 2018): 531–34. http://dx.doi.org/10.1134/s106378261804005x.

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31

Briggs, Andrew F., Leland J. Nordin, Aaron J. Muhowski, Priyanka Petluru, David Silva, Daniel Wasserman, and Seth R. Bank. "Mid-infrared electroluminescence from type-II In(Ga)Sb quantum dots." Applied Physics Letters 116, no. 6 (February 10, 2020): 061103. http://dx.doi.org/10.1063/1.5134808.

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32

Cherbunin, R. V., S. Yu Verbin, K. Flisinski, I. Ya Gerlovin, I. V. Ignatiev, D. V. Vishnevsky, D. Reuter, A. D. Wieck, D. R. Yakovlev, and M. Bayer. "Time-resolved Hanle effect in (In,Ga)As/GaAs quantum dots." Journal of Physics: Conference Series 245 (September 1, 2010): 012055. http://dx.doi.org/10.1088/1742-6596/245/1/012055.

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33

He, J., R. Nötzel, P. Offermans, P. M. Koenraad, Q. Gong, G. J. Hamhuis, T. J. Eijkemans, and J. H. Wolter. "Formation of columnar (In,Ga)As quantum dots on GaAs(100)." Applied Physics Letters 85, no. 14 (October 4, 2004): 2771–73. http://dx.doi.org/10.1063/1.1801172.

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34

Gradkowski, Kamil, Tomasz J. Ochalski, David P. Williams, Jun Tatebayashi, Arezou Khoshakhlagh, Ganesh Balakrishnan, Eoin P. O’Reilly, Guillaume Huyet, Larry R. Dawson, and Diana L. Huffaker. "Optical transition pathways in type-II Ga(As)Sb quantum dots." Journal of Luminescence 129, no. 5 (May 2009): 456–60. http://dx.doi.org/10.1016/j.jlumin.2008.11.012.

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35

Finley, J. J., A. Lema�tre, A. D. Ashmore, D. J. Mowbray, M. S. Skolnick, M. Hopkinson, and T. F. Krauss. "Excitation and Relaxation Mechanisms in Single In(Ga)As Quantum Dots." physica status solidi (b) 224, no. 2 (March 2001): 373–78. http://dx.doi.org/10.1002/1521-3951(200103)224:2<373::aid-pssb373>3.0.co;2-n.

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36

Zhang, Wen-Jin, Chun-Yang Pan, Fan Cao, Haoran Wang, Qianqian Wu, and Xuyong Yang. "Synthesis and electroluminescence of novel white fluorescence quantum dots based on a Zn–Ga–S host." Chemical Communications 55, no. 94 (2019): 14206–9. http://dx.doi.org/10.1039/c9cc06881c.

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White-light-emitting Ag, Mn: Zn–Ga–S/ZnS quantum dots (QDs) with a gratifying photoluminescence (PL) quantum yield (QY) of up to 90% were prepared, and shown to be ultra-stable, maintaining a high PL intensity at 300 °C or for 32 h of UV illumination.

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37

Britton, Jonathan, Mahmut Durmuş, Samson Khene, Vongani Chauke, and Tebello Nyokong. "Third order nonlinear optical properties of phthalocyanines in the presence nanomaterials and in polymer thin films." Journal of Porphyrins and Phthalocyanines 17, no. 08n09 (August 2013): 691–702. http://dx.doi.org/10.1142/s108842461350003x.

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Third order nonlinear optical properties were determined for phthalocyanine complexes 1–10 containing In , Ga and Zn central metals and tetra- or octa-substituted with benzyloxyphenoxy, phenoxy, tert-butylphenoxy and amino groups at peripheral or non-peripheral positions. The phthalocyanines were embedded in poly (methyl methacrylate) polymer in the presence of CdTe quantum dots. All complexes 1–10 were studied in the presence of CdTe quantum dots and embedded in poly (methyl methacrylate) to form thin films. Complex 3 tetrasubstituted with tert-butylphenoxy groups at non-peripheral positions was also studied in the presence of CdS , CdSe quantum dots, fullerenes, single walled carbon nanotubes. Third order nonlinear optical parameters generally increase for Pcs in the presence of CdTe quantum dots.

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38

Strassner, Johannes, Johannes Richter, Thomas Loeber, Christoph Doering, and Henning Fouckhardt. "Epitaxial Growth of Optoelectronically Active Ga(As)Sb Quantum Dots on Al-Rich AlGaAs with GaAs Capsule Layers." Advances in Materials Science and Engineering 2021 (May 19, 2021): 1–10. http://dx.doi.org/10.1155/2021/8862946.

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We present a study of optoelectronically active Ga(As)As quantum dots (QDs) on Al-rich AlxGa1-xAs layers with Al concentrations up to x = 90%. So far, however, it has not been possible to grow optoelectronically active Ga(As)As QDs epitaxially directly on and in between Al-rich barrier layers in the AlGaInAsSb material system. A QD morphology might appear on the growth front, but the QD-like entities will not luminesce. Here, we use photoluminescence (PL) measurements to show that thin Al-free capsule layers between Al-rich barrier layers and the QD layers can solve this problem; this way, the QDs become optoelectronically active; that is, the dots become QDs. We consider antimonide QDs, that is, Ga(As)Sb QDs, either on GaAs for comparison or on AlxGa1-xAs barriers (x >10%) with GaAs capsule layers in between. We also discuss the influence of QD coupling both due to stress/strain from neighboring QDs and quantum-mechanically on the wavelength of the photoluminescence peak. Due to their mere existence, the capsule layers alter the barriers by becoming part of them. Quantum dots applications such as QD semiconductor lasers for spectroscopy or QDs as binary storage cells will profit from this additional degree of design freedom.

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39

Kim, Jong-Hoon, Bu-Yong Kim, Eun-Pyo Jang, Chang-Yeol Han, Jung-Ho Jo, Young Rag Do, and Heesun Yang. "A near-ideal color rendering white solid-state lighting device copackaged with two color-separated Cu–X–S (X = Ga, In) quantum dot emitters." Journal of Materials Chemistry C 5, no. 27 (2017): 6755–61. http://dx.doi.org/10.1039/c7tc01875d.

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Huang, She Song, Zhi Chuan Niu, and Jian Bai Xia. "Self-Assembled GaAs Quantum Rings by MBE Droplet Epitaxy." Solid State Phenomena 121-123 (March 2007): 541–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.121-123.541.

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Fabrication of semiconductor nanostructures such as quantum dots (QDs), quantum rings (QRs) has been considered as the important step for realization of solid state quantum information devices, including QDs single photon emission source, QRs single electron memory unit, etc. To fabricate GaAs quantum rings, we use Molecular Beam Epitaxy (MBE) droplet technique in this report. In this droplet technique, Gallium (Ga) molecular beams are supplied initially without Arsenic (As) ambience, forming droplet-like nano-clusters of Ga atoms on the substrate, then the Arsenic beams are supplied to crystallize the Ga droplets into GaAs crystals. Because the morphologies and dimensions of the GaAs crystal are governed by the interplay between the surface migration of Ga and As adatoms and their crystallization, the shape of the GaAs crystals can be modified into rings, and the size and density can be controlled by varying the growth temperatures and As/Ga flux beam equivalent pressures(BEPs). It has been shown by Atomic force microscope (AFM) measurements that GaAs single rings, concentric double rings and coupled double rings are grown successfully at typical growth temperatures of 200°C to 300°C under As flux (BEP) of about 1.0×10-6 Torr. The diameter of GaAs rings is about 30-50 nm and thickness several nm.

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Park, Ji-Hyeon, Arjun Mandal, Dae-Young Um, San Kang, Da-som Lee, and Cheul-Ro Lee. "Fabrication of InxGa1−xN/GaN QDs with InAlGaN capping layer by coaxial growth on non-(semi-) polar n-GaN NWs using metal organic chemical vapor deposition for blue emission." RSC Advances 5, no. 58 (2015): 47090–97. http://dx.doi.org/10.1039/c5ra06836c.

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Dai, Jong-Horng, Jheng-Han Lee, and Si-Chen Lee. "Annealing Effect on the Formation of In(Ga)As Quantum Rings From InAs Quantum Dots." IEEE Photonics Technology Letters 20, no. 2 (January 2008): 165–67. http://dx.doi.org/10.1109/lpt.2007.912481.

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Косарев, А. Н., В. В. Чалдышев, А. А. Кондиков, Т. А. Вартанян, Н. А. Торопов, И. А. Гладских, П. В. Гладских, et al. "Эпитаксиальные квантовые точки InGaAs в матрице Al-=SUB=-0.29-=/SUB=-Ga-=SUB=-0.71-=/SUB=-As: интенсивность и кинетика люминесценции в ближнем поле серебряных наночастиц." Журнал технической физики 126, no. 5 (2019): 573. http://dx.doi.org/10.21883/os.2019.05.47655.382-18.

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AbstractQuantum dots of indium gallium arsenide buried in a thin layer of aluminum gallium arsenide were grown by means of molecular-beam epitaxy. The influence of silver nanoparticles grown on the surface of the semiconductor structure by vacuum thermal evaporation on photoluminescence of quantum dots was investigated. Photoluminescence spectra of quantum dots were obtained under stationary and pulsed excitation. The influence of silver nanoparticles exhibiting plasmon resonances on spectral distribution and kinetics of luminescence of the epitaxial quantum dots was studied.

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Gargallo-Caballero, R., A. Guzmán, J. M. Ulloa, A. Hierro, M. Hopkinson, E. Luna, and A. Trampert. "Impact of the Ga/In ratio on the N incorporation into (In,Ga)(As,N) quantum dots." Journal of Applied Physics 111, no. 8 (April 15, 2012): 083530. http://dx.doi.org/10.1063/1.4706559.

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Zhang, Y. C., Z. G. Wang, B. Xu, F. Q. Liu, Y. H. Chen, and Philip Dowd. "Influence of strain on annealing effects of In(Ga)As quantum dots." Journal of Crystal Growth 244, no. 2 (October 2002): 136–41. http://dx.doi.org/10.1016/s0022-0248(02)01614-7.

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Varshni, Y. P. "Accurate wavefunctions for hydrogenic donors in GaAs(Ga,Al)As quantum dots." Physics Letters A 252, no. 5 (March 1999): 248–50. http://dx.doi.org/10.1016/s0375-9601(99)00030-4.

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Robert, C., M. O. Nestoklon, K. Pereira da Silva, L. Pedesseau, C. Cornet, M. I. Alonso, A. R. Goñi, et al. "Strain-induced fundamental optical transition in (In,Ga)As/GaP quantum dots." Applied Physics Letters 104, no. 1 (January 6, 2014): 011908. http://dx.doi.org/10.1063/1.4861471.

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Stoleru, V. G., and E. Towe. "Oscillator strength for intraband transitions in (In,Ga)As/GaAs quantum dots." Applied Physics Letters 83, no. 24 (December 15, 2003): 5026–28. http://dx.doi.org/10.1063/1.1631740.

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Ruvimov, S., P. Werner, K. Scheerschmidt, U. Gösele, J. Heydenreich, U. Richter, N. N. Ledentsov, et al. "Structural characterization of (In,Ga)As quantum dots in a GaAs matrix." Physical Review B 51, no. 20 (May 15, 1995): 14766–69. http://dx.doi.org/10.1103/physrevb.51.14766.

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Nguyen Thanh, T., C. Robert, C. Cornet, M. Perrin, J. M. Jancu, N. Bertru, J. Even, et al. "Room temperature photoluminescence of high density (In,Ga)As/GaP quantum dots." Applied Physics Letters 99, no. 14 (October 3, 2011): 143123. http://dx.doi.org/10.1063/1.3646911.

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