Relevant bibliographies by topics / In-Plane Tunneling

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'In-Plane Tunneling'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "In-Plane Tunneling"

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Weiss, Nicolas, Ute Drechsler, Michel Despont, and Stuart S. P. Parkin. "Cryogenic current-in-plane tunneling apparatus." Review of Scientific Instruments 79, no. 12 (December 2008): 123902. http://dx.doi.org/10.1063/1.2972167.

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Aubin, H., D. E. Pugel, E. Badica, L. H. Greene, Sha Jain, and D. G. Hinks. "In-plane quasi-particle tunneling into Bi2Sr2CaCu2O8." Physica C: Superconductivity 341-348 (November 2000): 1681–82. http://dx.doi.org/10.1016/s0921-4534(00)00934-5.

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Kane, J. W., Q. Chen, and K. W. Ng. "a-b plane tunneling spectroscopy and in-plane gap anisotropy in Bi2Sr2CaCu2O8." Physica C: Superconductivity 235-240 (December 1994): 1877–78. http://dx.doi.org/10.1016/0921-4534(94)92160-1.

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Yang, Bo, Xiaoyong Gao, and Cheng Li. "A Novel Micromachined Z-axis Torsional Accelerometer Based on the Tunneling Magnetoresistive Effect." Micromachines 11, no. 4 (April 17, 2020): 422. http://dx.doi.org/10.3390/mi11040422.

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A novel micromachined z-axis torsional accelerometer based on the tunneling magnetoresistive effect is presented in this paper. The plane main structure bonded with permanent magnetic film is driven to twist under the action of inertial acceleration, which results in the opposite variation of the magnetic field intensity. The variation of the magnetic field is measured by two differential tunneling magnetoresistive sensors arranged on the top substrate respectively. Electrostatic feedback electrodes plated on the bottom substrate are used to revert the plane main structure to an equilibrium state and realize the closed-loop detection of acceleration. A modal simulation of the micromachined z-axis tunneling magnetoresistive accelerometer was implemented to verify the theoretical formula and the structural optimization. Simultaneously, the characteristics of the magnetic field were analyzed to optimize the layout of the tunneling magnetoresistance accelerometer by finite element simulation. The plane main structure, fabricated with the process of standard deep dry silicon on glass (DDSOG), had dimensions of 8000 μm (length) × 8000 μm (width) × 120μm (height). A prototype of the micromachined z-axis tunneling magnetoresistive accelerometer was produced by micro-assembly of the plane main structure with the tunneling magnetoresistive sensors. The experiment results demonstrate that the prototype has a maximal sensitivity of 1.7 mV/g and an acceleration resolution of 128 μg/Hz0.5 along the z-axis sensitive direction.
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Rainer, G., J. Smoliner, E. Gornik, G. Böhm, and G. Weimann. "Tunneling and nonparabolicity effects in in-plane magnetic fields." Physical Review B 51, no. 24 (June 15, 1995): 17642–47. http://dx.doi.org/10.1103/physrevb.51.17642.

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Schmidt, K. H., M. Versen, C. Bock, U. Kunze, D. Reuter, and A. D. Wieck. "In-plane and perpendicular tunneling through InAs quantum dots." Physica E: Low-dimensional Systems and Nanostructures 7, no. 3-4 (May 2000): 425–29. http://dx.doi.org/10.1016/s1386-9477(99)00354-9.

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Suiker, Akke S. J., and Norman A. Fleck. "Crack tunneling and plane-strain delamination in layered solids." International Journal of Fracture 125, no. 1 (January 2004): 1–32. http://dx.doi.org/10.1023/b:frac.0000021064.52949.e2.

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Alderliesten, René C. "On crack tunneling and plane-strain delamination in laminates." International Journal of Fracture 148, no. 4 (December 2007): 401–14. http://dx.doi.org/10.1007/s10704-008-9212-8.

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Nesher, O., and G. Koren. "Directional in-plane tunneling in oxygen-deficientYBa2Cu3O6.6/YBa2Cu2.55Fe0.45Oy/YBa2Cu3O6.6edge junctions." Physical Review B 60, no. 21 (December 1, 1999): 14893–96. http://dx.doi.org/10.1103/physrevb.60.14893.

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Mahanty, J., and MT Michalewicz. "Interaction Potential of a Charged Particle in a Plane?Sphere Geometry." Australian Journal of Physics 40, no. 3 (1987): 413. http://dx.doi.org/10.1071/ph870413.

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The three� dimensional potential of a charged particle tunneling between a flat metal surface and a spherical metal tip is calculated within the framework of the hydrodynamic description of metallic electrons. It is demonstrated that the inclusion of coupling of surface modes in the two electrodes, even for separations as small as 10 times the screening length in either of them, contributes less than 5% of the total potential of a point charge. Hence the potential is obtained as a superposition of contributions from a planar surface and a charge neutral, conducting sphere (and can include a simple classical term for a sphere at a fixed potential). This should enable accurate determination of three� dimensional tunnel currents in scanning tunneling microscope geometry.
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Dissertations / Theses on the topic "In-Plane Tunneling"

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Pairor, Puangratana. "In-plane tunneling spectroscopy of d-wave superconductors." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 2001. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/NQ63754.pdf.

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Siddiqui, Aleem 1977. "Use of time domain capacitance spectroscopy in the study of tunneling into two-dimensional GaAs/AlGaAs heterostructures with an in-plane magnetic field." Thesis, Massachusetts Institute of Technology, 2003. http://hdl.handle.net/1721.1/87885.

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Clément, Pierre-Yves. "Transport électronique dans les jonctions tunnel magnétiques à double barrière." Thesis, Grenoble, 2014. http://www.theses.fr/2014GRENY040/document.

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Afin de concurrencer les mémoires à accès aléatoire de type DRAM actuellement sur le marché, les mémoires magnétiques ont depuis quelques années fait l'objet de nombreuses études afin de les rendre aussi performantes que possible. Dans ce contexte, les jonctions tunnel magnétiques à double barrière pourraient présenter des avantages significatifs en termes de vitesse de lecture et de consommation électrique. Nous avons en effet fait la démonstration que les structures à double barrière permettent, pour une configuration antiparallèle des aimantations des polariseurs, d'accroître les effets de transfert de spin assurant ainsi des courants d'écriture faibles. Dans la configuration parallèle des polariseurs, le phénomène est inversé et le couple par transfert de spin résultant est considérablement réduit. Cela permettrait de lire l'information plus rapidement en utilisant des tensions du même ordre de grandeurs que celles utilisées pour l'écriture. Nous avons par ailleurs proposé une méthode d'analyse permettant de caractériser les deux barrières tunnel par des mesures électriques en pleine plaque, ce qui facilite le développement des matériaux et atteste des propriétés électriques attendues avant nanofabrication
Since a few years, magnetic memories have been extensively studied in order to compete with already existing Random Access Memories such as DRAM. In this context, double barrier magnetic tunnel junctions may have significant assets in terms of reading speed and electrical consumption. In fact, we demonstrated that spin transfer torque is enhanced when polarizers magnetizations are antiparallel, thus yielding a decrease of the writing current. On the contrary, when polarizers are parallel, spin transfer torque is drastically shrinked, thus allowing fast reading of the storage layer state at a voltage as large as the writing voltage. Moreover, we proposed an analysis method to characterize both tunnel barriers by full-sheet electrical measurements, leading to considerable gain of time in material developpement
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Dias, Mariama Rebello de Sousa. "Transport phenomena in quasi-one-dimensional heterostructures." Universidade Federal de São Carlos, 2014. https://repositorio.ufscar.br/handle/ufscar/4973.

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Made available in DSpace on 2016-06-02T20:15:31Z (GMT). No. of bitstreams: 1 5844.pdf: 11430873 bytes, checksum: b80a5790a9ebf6ae63ff48e52968ae60 (MD5) Previous issue date: 2014-02-21
Universidade Federal de Sao Carlos
O crescimento e caracterização de sistemas de heteroestruturas semicondutoras quasi-unidimensionais têm atraído grande interesse devido à sua potencial de aplicação tecnológica, como foto-detectores, dispositivos opto-eletrônicos assim como seu para o processamento de informação quântica e aplicações em fotônica. O objetivo desta tese é o estudo das propriedades de transporte eletrônico e de spin em sistemas semicondutores quasi-unidimensionais, especificamente trataremos de nanofios (NWs) homogêneos, NWs acoplados, NWs do tipo plano-geminado (TP), diodos de tunelamento ressonante (ETD) e cadeias de pontos quânticos (QDCS). Escolhemos o método k-p, particularmente o Hamiltoniano de Luttinger, para descrever os efeitos de confinamento e tensão biaxial. Este sugeriu uma modulação do caráter do estado fundamental que, complementada com a dinâmica fônons fornecidas pelas simulações da Dinâmica Molecular (MD), permitiu a descrição da modulação da mobilidade de buracos por emissão ou absorção de fônons. Em relação ao sistema de NWs acoplado,estudamos, através do método da matriz de transferência (TMM), as propriedades de transporte de elétrons e spin sob a interação de spin-órbita (SOI) de Eashba, localizada na região de acoplamento entre fios. Foram consideradas várias configurações de tensões de gate (Vg) aplicadas nos fios. Desse modo, compreendemos a modulação do transporte de spin quando esse é projetado no direção-z através da combinação do SOI e das dimensionalidades do sistema. Da mesma forma, a combinação de SOI e da Vg aplicada deu origem a modulação da polarização, quando o spin medido é projetado na mesma direção em que o SOI de Eashba atua, a direção y. Usando o TMM, exploramos as propriedades de transporte de um DBS e o efeito de uma resistência em série com o intuito de provar a natureza da biestabilidade das curvas características I V bem como o aumento de sua área com temperatura, resultados fornecidos por experimentos. O modelo indicou que aumentando da resistência pela diminuição sa temperatura aumenta a área biestável. A presença de uma hetero-junção adicional ao sistema induz uma densidade de carga nas suas interfaces. De acordo com esta configuração, a queda de tensão total do ETDS muda, podendo ser confirmada experimentalmente. A formação dos peculiares campos de deformação e sua influência sobre a estrutura eletrônicas e propriedades de transporte em superredes de TP foi estudada sistematicamente. Assim, as propriedades de transporte, de ambos os elétrons e buracos, pode ser sintonizada eficientemente, mesmo no caso de elétrons r em sistemas de blenda de zinco, contrastando com a prevista transparência de elétrons r em superredes de semicondutores III-V heteroestruturados. Além disso, constatamos que a probabilidade de transmissão para buracos da banda de valência também poderia ser efetivamente modificada através de uma tensão externa.Por fim, colaboradores sintetizaram com sucesso sistemas de QDCs de InGaAs através da epitaxia de feixe molecular e engenharia de tensão. Um comportamento anisotrópico da condutância com a temperatura foi observado em QDCs com diferentes concentrações de dopagem, medida realizada ao longo e entre os QDCs. O modelo teórico 1D de hoppíng desenvolvido mostrou que a presença de estados OD modela a resposta anisotrópica da condutância neste sistemas.
The growth and characterization of semiconductor quasi-one-dimensional heterostructure systems have attracted increasing interest due to their potential technological application, like photo-detectors, optoelectronic devices and their promising features for quantum information processing and photonic applications. The goal of this thesis is the study of electronic and spin transport properties on quasi-one-dimensional semiconductor systems; specifically, homogenous nanowires (NWs), coupled NW s, twin-plane (TP) NWs, resonant tunneling diodes (RTDs), and quantum dot chains (QDCs). The k-p method, in particular the Luttinger Hamiltonian, was chosen to describe the effects of biaxial confinement and strain. This suggested a modulation of the ground state character that, complemented with the phonon dynamics provided by Molecular Dynamics (MD) simulations, allowed the description of the hole mobility modulation by either phonon emission or absorption. Regarding the coupled NW s system, the electron and spin transport properties affected by a Rashba spin-orbit interaction (SOI) at the joined region were unveiled through the Transfer Matrix Method (TMM). Various configurations of gate voltages (Vg), applied on the wire structure, were considered. We were able to understand the modulation of the spin transport projected in the z-direction trough the combination of the SOI and the system dimensionalities. Likewise, the combination of SOI and applied Vg gave rise to a modulation of the polarization, when the measured spin is projected in the same direction where the Rashba SOI acts, the y-direction. The transport properties of a DBS and the effect of a resistance in series was explored within the TMM to prove the nature of a bistability of the I V characteristics and its enhanced area with temperature provided by the experiment. The model indicates that increasing the resistente by decreasing the temperature, the bistable area enhances. The presence of an additional heterojunction induces a sheet charge at its interfaces. Under this configuration, the total voltage drop of the RTD changes and can be confirmed experimentally.The formation of the peculiar strain fields and their influence on the electronic structure and transport properties of a TP superlattice was systematically studied. Hence, the transport properties of both electrons and holes could be effectively tuned even in the case of T-electrons of zincblende systems, contrasting to the predicted transparency of T-electrons in heterolayered III-V semiconductor superlattices. Also, the transmission probability for holes at valence band could also be effectively modified by applying an external stress. Finally, using molecular-beam-epitaxy and skillful strain engineering, systems of In-GaAs QDCs were successfully synthesized by collaborators. The QDCs with different doping concentrations showed an anisotropic behavior of the conductance, measured along and across the QDCs, with temperature. The theoretical ID hopping model developed found that the presence of OD states shapes the anisotropic response of the conductance in this system.
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Lin, Yu-Cyun, and 林育羣. "Magnetoresistance measurement of magnetic tunnel junction wafers by patterned current-in-plane tunneling method." Thesis, 2009. http://ndltd.ncl.edu.tw/handle/49354867003644718355.

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碩士
國立雲林科技大學
材料科技研究所
97
The development of magnetic tunneling junctions (MTJs) mainly concentrates on raising their magnetoresistance ratios (MR) while reducing the values of the resistance-area product (RA). To measure MR and RA values, the blanket wafers are usually needed to be patterned into devices. However, the involved lithographic process is expensive and time-consuming since it is a multi-step process. To accelerate the development period it is important to assess the quality of whole blanket wafers before patterning. A newly proposed current-in-plane tunneling (CIPT) method provides a rapid and nondestructive way to measure simultaneously both MR and RA values. Unfortunately, the commercial equipment is expensive and dedicated. In present study, we propose a compromised method similar to the CIPT method; but instead of using expensive 12-point microprobes, a series of point contacts with different spacing were deposited onto the MTJ’s top surface and each contact connects to a probe pad through a sensing lead (fig. 1). Then the conventional four-point probe method can be applied to the chosen pads. Compared to process of etching through the whole MTJ stack, fabrication of these top contacts involves fewer steps process and thus can be very fast. In the first part of the thesis, the effects of various CIPT parameters on the MRCIP curve were explored by simulation and the results are helpful for decision of best tip distance. In the second part of the thesis, the results of implementation of the CIPT measurement through patterned contacts are reported. Finally the factors which affect success measurement are discussed.
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Fahad, Hossain M. "3D NANOTUBE FIELD EFFECT TRANSISTORS FOR HYBRID HIGH-PERFORMANCE AND LOW-POWER OPERATION WITH HIGH CHIP-AREA EFFICIENCY." Diss., 2014. http://hdl.handle.net/10754/313701.

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Information anytime and anywhere has ushered in a new technological age where massive amounts of ‘big data’ combined with self-aware and ubiquitous interactive computing systems is shaping our daily lives. As society gravitates towards a smart living environment and a sustainable future, the demand for faster and more computationally efficient electronics will continue to rise. Keeping up with this demand requires extensive innovation at the transistor level, which is at the core of all electronics. Up until recently, classical silicon transistor technology has traditionally been weary of disruptive innovation. But with the aggressive scaling trend, there has been two dramatic changes to the transistor landscape. The first was the re-introduction of metal/high-K gate stacks with strain engineering in the 45 nm technology node, which enabled further scaling on silicon to smaller nodes by alleviating the problem of gate leakage and improving the channel mobility. The second innovation was the use of non-planar 3D silicon fins as opposed to classical planar architectures for stronger electrostatic control leading to significantly lower off-state leakage and other short-channel effects. Both these innovations have prolonged the life of silicon based electronics by at least another 1-2 decades. The next generation 14 nm technology node will utilize silicon fin channels that have gate lengths of 14 nm and fin thicknesses of 7 nm. These dimensions are almost at the extreme end of current lithographic capabilities. Moreover, as fins become smaller, the parasitic capacitances and resistances increase significantly resulting in degraded performance. It is of popular consensus that the next evolutionary step in transistor technology is in the form of gate-all-around silicon nanowires (GAA NWFETs), which offer the tightest electrostatic configuration leading to the lowest possible leakage and short channel characteristics in over-the-barrier type devices. However, to keep scaling on silicon, the amount of current generated per device has to be increased while keeping short channel effects and off-state leakage at bay. The objective of this doctoral thesis is the investigation of an innovative vertical silicon based architecture called the silicon nanotube field effect transistor (Si NTFET). This topology incorporates a dual inner/outer core/shell gate stack strategy to control the volume inversion properties in a hollow silicon 1D quasi-nanotube under a tight electrostatic configuration. Together with vertically aligned source and drain, the Si NTFET is capable of very high on-state performance (drive current) in an area-efficient configuration as opposed to arrays of gate-all-around nanowires, while maintaining leakage characteristics similar to a single nanowire. Such a device architecture offsets the need of device arraying that is needed with fin and nanowire architectures. Extensive simulations are used to validate the potential benefits of Si NTFETs over GAA NWFETs on a variety of platforms such as conventional MOSFETs, tunnel FETs, junction-less FETs. This thesis demonstrates a novel CMOS compatible process flow to fabricate vertical nanotube transistors that offer a variety of advantages such as lithography-independent gate length definition, integration of epitaxially grown silicon nanotubes with spacer based gate dielectrics and abrupt in-situ doped source/drain junctions. Experimental measurement data will showcase the various materials and processing challenges in fabricating these devices. Finally, an extension of this work to topologically transformed wavy channel FinFETs is also demonstrated keeping in line with the theme of area efficient high-performance electronics.
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Schlickum, Katharina Uta [Verfasser]. "Spin polarized scanning tunneling microscopy studies on in-plane magnetization components of thin antiferromagnetic films on Fe(001) / von Katharina Uta Schlickum." 2005. http://d-nb.info/978630033/34.

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Books on the topic "In-Plane Tunneling"

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Pairor, Puangratana. In-plane tunneling spectroscopy of d-Wave superconductors. 2001.

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Book chapters on the topic "In-Plane Tunneling"

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Abraham, David W., C. C. Williams, and H. K. Wickramasinghe. "High-resolution force microscopy of in-plane magnetization." In Scanning Tunneling Microscopy, 219–25. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-011-1812-5_34.

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Chung, Y. C., T. Reker, L. E. Bremme, R. Grey, and P. C. Klipstein. "Resonant Tunneling of Holes under in-plane uniaxial stress." In Springer Proceedings in Physics, 831–32. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_394.

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Liu, Mengxi. "Controlled Synthesis of in-Plane h-BN-G Heterostructures." In Controlled Synthesis and Scanning Tunneling Microscopy Study of Graphene and Graphene-Based Heterostructures, 55–76. Singapore: Springer Singapore, 2017. http://dx.doi.org/10.1007/978-981-10-5181-4_4.

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Steel, Duncan G. "Scattering, Quantum Current, and Resonant Tunneling." In Introduction to Quantum Nanotechnology, 69–81. Oxford University Press, 2021. http://dx.doi.org/10.1093/oso/9780192895073.003.0005.

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Having examined free particles and particles that are confined in space by a potential energy term, we now consider the impact of a disturbance in the flat energy landscape for a free particle. By disturbance we means some kind of fixed “obstacle” which is either a positive (repelling) or negative (attractive) potential. We are interested in determining the impact on the free particle. Continuing to work mostly in one dimension, the particle described by a plane wave corresponding to momentum moving in the positive direction (a positive k−vector in the x−direction), we study elastic scattering. In one dimension, this means that we determine the probability that the particle is transmitted (continuing in the forward direction) or reflected (now moving in the backward direction.) We will also determine the nature of the solution inside the potential and in the case that the potential energy maximum is greater than the kinetic energy of the particle, we will show that the particle tunnels through the barrier. Interestingly, when we have two barriers, we can find conditions where the probability that the particle is transmitted is unity. This is the result of resonance, a feature of the wave-like nature of the particle’s wave function.
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Conference papers on the topic "In-Plane Tunneling"

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Hinkov, Borislav, Benedikt Schwarz, Andreas Harrer, Daniela Ristanic, Werner Schrenk, Maxime Hugues, Jean-Michel Chauveau, and Gottfried Strasser. "Resonant tunneling diodes based on ZnO for quantum cascade structures (Conference Presentation)." In Novel In-Plane Semiconductor Lasers XVI, edited by Alexey A. Belyanin and Peter M. Smowton. SPIE, 2017. http://dx.doi.org/10.1117/12.2252753.

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Gebert, Jens, and Dietrich Zeller. "Fat pipes for user plane tunneling in 5G." In 2016 IEEE Conference on Standards for Communications and Networking (CSCN). IEEE, 2016. http://dx.doi.org/10.1109/cscn.2016.7784886.

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Su, C. "In-situ Measurement of In-Plane and Out-of-Plane Force Gradient with a Torsional Resonance Mode AFM." In SCANNING TUNNELING MICROSCOPY/SPECTROSCOPY AND RELATED TECHNIQUES: 12th International Conference STM'03. AIP, 2003. http://dx.doi.org/10.1063/1.1639717.

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Bauer, Sven, Vitalii Sichkovskyi, Florian Schnabel, Anna Sengül, Johann Peter Reithmaier, Ori Eyal, Igor Khanonkin, and Gadi Eisenstein. "On the differences in dynamical properties of quantum-dot lasers with and without p-doping in the active region and tunneling injection quantum wells." In Novel In-Plane Semiconductor Lasers XIX, edited by Alexey A. Belyanin and Peter M. Smowton. SPIE, 2020. http://dx.doi.org/10.1117/12.2548498.

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Gurunarayanan, Surya Prakash, Niels Verellen, Vyacheslav S. Zharinov, Finub James Shirley, Victor V. Moshchalkov, Marc M. Heyns, Joris Van de Vondel, Iuliana P. Radu, and Pol Van Dorpe. "Unidirectional light-emission from in-plane tunneling nanoantennas (Conference Presentation)." In Ultrafast Phenomena and Nanophotonics XXII, edited by Markus Betz and Abdulhakem Y. Elezzabi. SPIE, 2018. http://dx.doi.org/10.1117/12.2288380.

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Susla, Bronislaw, Miroslaw Drozdowski, Marek Kozielski, Tomasz Runka, and Miroslaw Szybowicz. "Tunneling and Raman scattering in ab plane of Bi2Sr2CaCu2O8 single crystal." In Solid State Crystals: Materials Science and Applications, edited by Jozef Zmija. SPIE, 1995. http://dx.doi.org/10.1117/12.224971.

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Kuroda, Tatsuya, Futo Hashimoto, and Nobuya Mori. "Resonant Enhancement of Band-to-band Tunneling in In-plane MoS2/WS2Heterojunction Tunnel Transistors." In 2019 Compound Semiconductor Week (CSW). IEEE, 2019. http://dx.doi.org/10.1109/iciprm.2019.8819116.

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Deborde, J. L. "In-plane tunneling spectroscopy of a two-dimensional electron gas through a one-dimensional barrier." In PHYSICS OF SEMICONDUCTORS: 27th International Conference on the Physics of Semiconductors - ICPS-27. AIP, 2005. http://dx.doi.org/10.1063/1.1994171.

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Son, S. H., S. W. Hwang, J. I. Lee, Y. J. Park, Y. S. Yu, and D. Ahn. "Resonant tunneling through Quantum States of Enhancement Mode an In-Plane-Gate Quantum Dot Transistor." In PHYSICS OF SEMICONDUCTORS: 28th International Conference on the Physics of Semiconductors - ICPS 2006. AIP, 2007. http://dx.doi.org/10.1063/1.2730136.

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Ohnishi, H., M. Hirai, K. Fujita, and T. Watanabe. "Room Temperature Operation of a Lateral Tunneling Transistor Fabricated by Plane-Dependent Si Doping in Nonplanar Epitaxy." In 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.a-7-3.

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