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Journal articles on the topic 'In-Plane Tunneling'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Weiss, Nicolas, Ute Drechsler, Michel Despont, and Stuart S. P. Parkin. "Cryogenic current-in-plane tunneling apparatus." Review of Scientific Instruments 79, no. 12 (December 2008): 123902. http://dx.doi.org/10.1063/1.2972167.

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2

Aubin, H., D. E. Pugel, E. Badica, L. H. Greene, Sha Jain, and D. G. Hinks. "In-plane quasi-particle tunneling into Bi2Sr2CaCu2O8." Physica C: Superconductivity 341-348 (November 2000): 1681–82. http://dx.doi.org/10.1016/s0921-4534(00)00934-5.

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3

Kane, J. W., Q. Chen, and K. W. Ng. "a-b plane tunneling spectroscopy and in-plane gap anisotropy in Bi2Sr2CaCu2O8." Physica C: Superconductivity 235-240 (December 1994): 1877–78. http://dx.doi.org/10.1016/0921-4534(94)92160-1.

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4

Yang, Bo, Xiaoyong Gao, and Cheng Li. "A Novel Micromachined Z-axis Torsional Accelerometer Based on the Tunneling Magnetoresistive Effect." Micromachines 11, no. 4 (April 17, 2020): 422. http://dx.doi.org/10.3390/mi11040422.

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A novel micromachined z-axis torsional accelerometer based on the tunneling magnetoresistive effect is presented in this paper. The plane main structure bonded with permanent magnetic film is driven to twist under the action of inertial acceleration, which results in the opposite variation of the magnetic field intensity. The variation of the magnetic field is measured by two differential tunneling magnetoresistive sensors arranged on the top substrate respectively. Electrostatic feedback electrodes plated on the bottom substrate are used to revert the plane main structure to an equilibrium state and realize the closed-loop detection of acceleration. A modal simulation of the micromachined z-axis tunneling magnetoresistive accelerometer was implemented to verify the theoretical formula and the structural optimization. Simultaneously, the characteristics of the magnetic field were analyzed to optimize the layout of the tunneling magnetoresistance accelerometer by finite element simulation. The plane main structure, fabricated with the process of standard deep dry silicon on glass (DDSOG), had dimensions of 8000 μm (length) × 8000 μm (width) × 120μm (height). A prototype of the micromachined z-axis tunneling magnetoresistive accelerometer was produced by micro-assembly of the plane main structure with the tunneling magnetoresistive sensors. The experiment results demonstrate that the prototype has a maximal sensitivity of 1.7 mV/g and an acceleration resolution of 128 μg/Hz0.5 along the z-axis sensitive direction.

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5

Rainer, G., J. Smoliner, E. Gornik, G. Böhm, and G. Weimann. "Tunneling and nonparabolicity effects in in-plane magnetic fields." Physical Review B 51, no. 24 (June 15, 1995): 17642–47. http://dx.doi.org/10.1103/physrevb.51.17642.

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6

Schmidt, K. H., M. Versen, C. Bock, U. Kunze, D. Reuter, and A. D. Wieck. "In-plane and perpendicular tunneling through InAs quantum dots." Physica E: Low-dimensional Systems and Nanostructures 7, no. 3-4 (May 2000): 425–29. http://dx.doi.org/10.1016/s1386-9477(99)00354-9.

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7

Suiker, Akke S. J., and Norman A. Fleck. "Crack tunneling and plane-strain delamination in layered solids." International Journal of Fracture 125, no. 1 (January 2004): 1–32. http://dx.doi.org/10.1023/b:frac.0000021064.52949.e2.

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8

Alderliesten, René C. "On crack tunneling and plane-strain delamination in laminates." International Journal of Fracture 148, no. 4 (December 2007): 401–14. http://dx.doi.org/10.1007/s10704-008-9212-8.

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9

Nesher, O., and G. Koren. "Directional in-plane tunneling in oxygen-deficientYBa2Cu3O6.6/YBa2Cu2.55Fe0.45Oy/YBa2Cu3O6.6edge junctions." Physical Review B 60, no. 21 (December 1, 1999): 14893–96. http://dx.doi.org/10.1103/physrevb.60.14893.

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10

Mahanty, J., and MT Michalewicz. "Interaction Potential of a Charged Particle in a Plane?Sphere Geometry." Australian Journal of Physics 40, no. 3 (1987): 413. http://dx.doi.org/10.1071/ph870413.

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The three� dimensional potential of a charged particle tunneling between a flat metal surface and a spherical metal tip is calculated within the framework of the hydrodynamic description of metallic electrons. It is demonstrated that the inclusion of coupling of surface modes in the two electrodes, even for separations as small as 10 times the screening length in either of them, contributes less than 5% of the total potential of a point charge. Hence the potential is obtained as a superposition of contributions from a planar surface and a charge neutral, conducting sphere (and can include a simple classical term for a sphere at a fixed potential). This should enable accurate determination of three� dimensional tunnel currents in scanning tunneling microscope geometry.

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11

Goodings, C. J., H. Mizuta, J. R. A. Cleaver, and H. Ahmed. "Variable‐area resonant tunneling diodes using implanted in‐plane gates." Journal of Applied Physics 76, no. 2 (July 15, 1994): 1276–86. http://dx.doi.org/10.1063/1.357787.

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12

Chen, Qun, K. W. Ng, A. E. Manzi, and H. L. Luo. "Tunneling studies of BSCCO-2223 in the ab-plane direction." Physica B: Condensed Matter 194-196 (February 1994): 1733–34. http://dx.doi.org/10.1016/0921-4526(94)91366-8.

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13

Ho, S., and Z. Suo. "Tunneling Cracks in Constrained Layers." Journal of Applied Mechanics 60, no. 4 (December 1, 1993): 890–94. http://dx.doi.org/10.1115/1.2900998.

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A thin, brittle layer bonded between tougher substrates is susceptible to cracking under residual and applied stresses. Such a crack initiates from an equi-axed flaw, confined by the substrates, tunneling in the brittle layer. Although tunneling is a three-dimensional process, the energy release rate at the front of a steady-state tunnel can be computed using plane strain fields. Several technically important problems are analyzed, including tunnels in adhesive joints, shear fracture, and kinked tunnels in a reaction product layer. The concept is finally applied to microcracking in brittle matrix composites caused by thermal expansion mismatch.

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14

Yang, Bo, Binlong Wang, Hongyu Yan, and Xiaoyong Gao. "Design of a Micromachined Z-axis Tunneling Magnetoresistive Accelerometer with Electrostatic Force Feedback." Micromachines 10, no. 2 (February 25, 2019): 158. http://dx.doi.org/10.3390/mi10020158.

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This paper presents the design, simulation, fabrication and experiments of a micromachined z-axis tunneling magnetoresistive accelerometer with electrostatic force feedback. The tunneling magnetoresistive accelerometer consists of two upper differential tunneling magnetoresistive sensors, a middle plane main structure with permanent magnetic films and lower electrostatic feedback electrodes. A pair of lever-driven differential proof masses in the middle plane main structure is used for sensitiveness to acceleration and closed-loop feedback control. The tunneling magnetoresistive effect with high sensitivity is adopted to measure magnetic field variation caused by input acceleration. The structural mode and mass ratio between inner and outer proof masses are optimized by the Ansys simulation. Simultaneously, the magnetic field characteristic simulation is implemented to analyze the effect of the location of tunneling magnetoresistive sensors, magnetic field intensity, and the dimension of permanent magnetic film on magnetic field sensitivity, which is beneficial for the achievement of maximum sensitivity. The micromachined z-axis tunneling magnetoresistive accelerometer fabricated by the standard deep dry silicon on glass (DDSOG) process has a device dimension of 6400 μm (length) × 6400 μm (width) × 120 μm (height). The experimental results demonstrate the prototype has a maximal sensitivity of 8.85 mV/g along the z-axis sensitive direction under the gap of 1 mm. Simultaneously, Allan variance analysis illustrate that a noise floor of 86.2 μg/Hz0.5 is implemented in the z-axis tunneling magnetoresistive accelerometer.

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15

Wójcik, Marek J., Marek Boczar, and Łukasz Boda. "Theoretical Studies of Dynamic Interactions in Excited States of Hydrogen-Bonded Systems." Journal of Atomic, Molecular, and Optical Physics 2012 (August 1, 2012): 1–17. http://dx.doi.org/10.1155/2012/985490.

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Theoretical model for vibrational interactions in the hydrogen-bonded benzoic acid dimer is presented. The model takes into account anharmonic-type couplings between the high-frequency O–H and the low-frequency O⋯O stretching vibrations in two hydrogen bonds, resonance interactions between two hydrogen bonds in the dimer, and Fermi resonance between the O–H stretching fundamental and the first overtone of the O–H in-plane bending vibrations. The model is used for theoretical simulation of the O–H stretching IR absorption bands of benzoic acid dimers in the gas phase in the first excited singlet state. Ab initio CIS and CIS(D)/CIS/6-311++G(d,p) calculations have been carried out in the Ã state of tropolone. The grids of potential energy surfaces along the coordinates of the tunneling vibration and the low-frequency coupled vibration have been calculated. Two-dimensional model potentials have been fitted to the calculated potential energy surfaces. The tunneling splittings for vibrationally excited states have been calculated and compared with the available experimental data. The model potential energy surfaces give good estimation of the tunneling splittings in the vibrationally ground and excited states of tropolone, and explain monotonic decrease in tunneling splittings with the excitation of low-frequency out-of-plane modes and increase of the tunneling splittings with the excitation of low-frequency planar modes.

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16

Shigeta, I., T. Uchida, Y. Tominari, T. Arai, F. Ichikawa, T. Fukami, T. Aomine, and V. M. Svistunov. "In-plane tunneling spectroscopy in Bi2Sr2CaCu2O8+δ–SiO–Ag planar junctions." Physica C: Superconductivity 357-360 (September 2001): 205–7. http://dx.doi.org/10.1016/s0921-4534(01)00207-6.

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17

Jiang, Qing Quan. "The Hawking Radiation of the Charged Massive Particle via Tunneling from a Plane Symmetry Black Hole." Applied Mechanics and Materials 170-173 (May 2012): 2940–43. http://dx.doi.org/10.4028/www.scientific.net/amm.170-173.2940.

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In Anti-de Sitter space-time, we develop the Parikh-Wilczek’s semi-classical quantum tunneling method to investigate the Hawking radiation of the charged massive particle via tunneling from a plane symmetry black hole. The result shows that, when taking self-gravitation interaction into account, the tunneling rate of the charged massive particle is related to the change of Bekenstein-Hawking entropy, and that the exact emission spectrum is not strictly pure thermal, but is consistent with the underlying unitary theory.

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18

Ting, Wu, R. Itti, Y. Ishimaru, G. Gu, Y. Enomoto, N. Koshizuka, and S. Tanaka. "Scanning tunneling microscope/scanning tunneling spectroscopy investigation of the structural modulation on the surface of cleaved Bi2Sr2CaCu2Oy, single crystal." Journal of Materials Research 10, no. 4 (April 1995): 817–22. http://dx.doi.org/10.1557/jmr.1995.0817.

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The surface of cleaved Bi2Sr2 CaCu2O3 (Bi2212) single crystals has been studied by means of scanning tunneling microscope (STM) and scanning tunneling spectroscopy (STS) at room temperature in ultrahigh vacuum. We obtain atomic images of the BiO surface using logarithmic current mode and conventional mode. It is demonstrated that the Bi atoms in the BiO plane are not missing. Some Bi atoms are depressed down below the BiO surface. STS obtained at different places of the surface shows more or less the same feature, indicating that local electronic density of states does not change much due to the depression or the well-known structural modulation. The possible origins of the variation in the period of the structural modulation in the BiO plane of cleaved Bi2212 single crystals extracted from STM images are also studied.

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19

Schlickum, U., W. Wulfhekel, and J. Kirschner. "Spin-polarized scanning tunneling microscope for imaging the in-plane magnetization." Applied Physics Letters 83, no. 10 (September 8, 2003): 2016–18. http://dx.doi.org/10.1063/1.1606867.

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20

Kane, Jeffrey, and K. W. Ng. "Angular dependence of the in-plane energy gap ofBi2Sr2CaCu2O8by tunneling spectroscopy." Physical Review B 53, no. 5 (February 1, 1996): 2819–26. http://dx.doi.org/10.1103/physrevb.53.2819.

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21

EISENSTEIN, J. P., I. B. SPIELMAN, L. N. PFEIFFER, and K. W. WEST. "TUNNELING IN A QUANTUM HALL EXCITONIC CONDENSATE." International Journal of Modern Physics B 16, no. 20n22 (August 30, 2002): 2923. http://dx.doi.org/10.1142/s0217979202013213.

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Recent experiments on the tunneling conductance between parallel 2D electron gases at total Landau level filing ν tot = 1 are described. When the two layers are close enough together the ground state of the system may be viewed as a Bose condensate of excitons consisting of electrons in one layer paired with (conduction band) holes in the other. The measured tunneling conductance exhibits a spectacular resonance around zero bias which resembles the dc Josephson effect. This resonance is a signature of long wavelength Goldstone collective modes in the phase coherent ground state. Experiments performed with an added in-plane magnetic field have demonstrated the expected linear dispersion of this mode.

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22

FUJITA, SHIGEJI, YOSHIYASU TAMURA, and AKIRA SUZUKI. "ON THE OUT-OF-PLANE MAGNETOTRANSPORT IN YBa2Cu3Oy." Modern Physics Letters B 14, no. 30 (December 30, 2000): 1085–92. http://dx.doi.org/10.1142/s021798490000135x.

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The out-of-plane resistivity, ρc, in a single-crystal YBa 2 Cu 3 O y follows the experimental law: ρc=C1ρab+C2/T, where C1, C2 are the constants and ρab is in-plane resistivity in the concentration range 6.6<y<6.92 with the highest T c , 90 K, occurring at y=6.88 and in the temperature range T c <T< room temperature. This behavior is microscopically explained under the assumption that the charge carriers are a mixture of "electrons", "holes", and ±pairons. The second term C2/T arises from the quantum tunneling between copper planes of the – pairons, moving with a linear dispersion relation, and the first term C1ρab from the in-plane currents due to the "holes" and +pairons.

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23

Kuroda, Tatsuya, and Nobuya Mori. "Resonant enhancement of band-to-band tunneling in in-plane MoS2/WS2heterojunctions." Japanese Journal of Applied Physics 57, no. 4S (February 23, 2018): 04FP03. http://dx.doi.org/10.7567/jjap.57.04fp03.

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24

Clement, P. Y., C. Ducruet, C. Baraduc, M. Chshiev, and B. Diény. "Diffusive model of current-in-plane-tunneling in double magnetic tunnel junctions." Applied Physics Letters 100, no. 26 (June 25, 2012): 262404. http://dx.doi.org/10.1063/1.4730961.

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25

KLEMM, RICHARD A., and GERALD B. ARNOLD. "JOSEPHSON (001) TILT GRAIN BOUNDARY JUNCTIONS OF HIGH-TEMPERATURE SUPERCONDUCTORS." International Journal of Modern Physics B 21, no. 18n19 (July 30, 2007): 3194–98. http://dx.doi.org/10.1142/s0217979207044172.

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We calculate the Josephson critical current Ic across in-plane (001) tilt grain boundary junctions of high-temperature superconductors. We assume the Fermi surface has either an electron-doped form, or one of three hole-doped forms, and either random or specular tunneling across the junctions. We find that in-plane 'phase-sensitive' experiments are consistent with our results for the electron-doped superconductors. For the hole-doped superconductors, however, the results depend strongly upon the details of both the Fermi surface topology and the nature of the tunneling, and are therefore considerably less robust than has generally been believed. Hence, the tricrystal, tetracrystal, and interferometry experiments on hole-doped high-temperatures superconductors are unreliable, and should be redesigned.

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26

Chang, Jui-Hang, and Ching-Ray Chang. "Influence of Film Thickness on Magnetic Tunneling Junction Sensor with In-Plane/Out-of-Plane Sensing Capabilities." IEEE Transactions on Magnetics 50, no. 1 (January 2014): 1–4. http://dx.doi.org/10.1109/tmag.2013.2276405.

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27

Guo, Caixia, Kaihang Han, Heng Kong, and Leilei Shi. "Explicit Form of Exact Analytical Solution for Calculating Ground Displacement and Stress Induced by Shallow Tunneling and Its Application." Advances in Civil Engineering 2019 (March 28, 2019): 1–13. http://dx.doi.org/10.1155/2019/5739123.

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In urban environment, it is often unavoidable for shallow tunnels to be constructed adjacent to existing pile foundations. To obtain the ground displacements and stresses induced by shallow tunneling and existing pile foundation loads, the key procedure involves superimposing the analytical solution for shallow tunneling in green-field with the analytical solution for existing structure loads. In green-field, the complex variable method provides exact analytical solutions of ground displacements and stresses caused by shallow tunneling. However, the exact analytical solutions are not directly expressed as explicit functions of the coordinates (x, y) in the physical plane (called implicit form of exact analytical solutions), whereas the displacements and stresses induced by existing structure loads are explicit functions of the coordinates (x, y) in the physical plane, which makes it difficult to superpose the displacements and stresses induced by existing structure loads. In this paper, explicit form of exact analytical solutions of displacements and stresses induced by shallow tunneling in green-field is obtained by using the inverse conformal transformation and the Cauchy–Riemann equations. Comparison with implicit form of exact analytical solutions shows that the explicit form of exact analytical solutions is intuitional and easily used by engineers, and moreover, the calculation amount is much smaller than that for the implicit form of exact analytical solutions. Then, an application involving superimposing the explicit form of exact analytical solutions with Mindlin’s solution is implemented to analyze the secondary stress field and the related potential plastic zone caused by shallow tunneling adjacent to pile foundations. Moreover, the influences of pile foundation parameters on the ranges and shapes of the potential plastic zones induced by nearby tunneling are analyzed.

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28

Liu Meng-Xi, Zhang Yan-Feng, and Liu Zhong-Fan. "Scanning tunneling microscopy study of in-plane graphene-hexagonal boron nitride heterostructures." Acta Physica Sinica 64, no. 7 (2015): 078101. http://dx.doi.org/10.7498/aps.64.078101.

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29

Borges, J. G., L. S. Dorneles, J. L. Maurice, and L. F. Schelp. "Intra and inter-plane spin dependent tunneling in Co/SiOx granular multilayers." Journal of Magnetism and Magnetic Materials 226-230 (May 2001): 936–38. http://dx.doi.org/10.1016/s0304-8853(00)01108-2.

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30

Serov, A. Yu, and G. G. Zegrya. "Suppression of intrinsic bistability in resonant-tunneling diode by in-plane magnetic field." Applied Physics Letters 86, no. 3 (January 17, 2005): 032108. http://dx.doi.org/10.1063/1.1853515.

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31

Dasgupta, Arindam, Mickaël Buret, Nicolas Cazier, Marie-Maxime Mennemanteuil, Reinaldo Chacon, Kamal Hammani, Jean-Claude Weeber, et al. "Electromigrated electrical optical antennas for transducing electrons and photons at the nanoscale." Beilstein Journal of Nanotechnology 9 (July 11, 2018): 1964–76. http://dx.doi.org/10.3762/bjnano.9.187.

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Background: Electrically controlled optical metal antennas are an emerging class of nanodevices enabling a bilateral transduction between electrons and photons. At the heart of the device is a tunnel junction that may either emit light upon injection of electrons or generate an electrical current when excited by a light wave. The current study explores a technological route for producing these functional units based upon the electromigration of metal constrictions. Results: We combine multiple nanofabrication steps to realize in-plane tunneling junctions made of two gold electrodes, separated by a sub-nanometer gap acting as the feedgap of an optical antenna. We electrically characterize the transport properties of the junctions in the light of the Fowler–Nordheim representation and the Simmons model for electron tunneling. We demonstrate light emission from the feedgap upon electron injection and show examples of how this nanoscale light source can be coupled to waveguiding structures. Conclusion: Electromigrated in-plane tunneling optical antennas feature interesting properties with their unique functionality enabling interfacing electrons and photons at the atomic scale and with the same device. This technology may open new routes for device-to-device communication and for interconnecting an electronic control layer to a photonic architecture.

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32

Gupta, Anjan K., and K. W. Ng. "Observation of Pseudogap in Underdoped Bi2Sr2CaCu2O8+δ by Tunneling Spectroscopy." International Journal of Modern Physics B 12, no. 29n31 (December 20, 1998): 3271–77. http://dx.doi.org/10.1142/s0217979298002453.

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We have performed tunneling measurements on underdoped and optimally doped single crystals of Bi2Sr2CaCu2O 8+δ(Bi2212). The tunneling is in the ab-plane, in the maximum gap direction for all of our experiments. Measurement temperature ranges from 4.2 K to well above 100 K. The superconducting gap has been measured for T < T c . 2Δ/kT c for underdoped Bi2212 (~ 13.4) is significantly larger than that of optimally doped Bi2212 (~ 8.8). As the temperature is raised above T c , the gap vanishes for the optimally doped sample. In contrary, the gap like feature for the underdoped Bi2212 persists with larger gap value at higher temperatures. There are interesting differences in the nature of superconducting gap and pseudogap.

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33

SHIRAI, M., T. KINOSHITA, and K. MOTIZUKI. "ELECTRON-PHONON INTERACTION AND SUPERCONDUCTIVITY IN OXIDE SUPERCONDUCTORS La2−xSrxCuO4." International Journal of Modern Physics B 07, no. 01n03 (January 1993): 182–85. http://dx.doi.org/10.1142/s021797929300041x.

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Effects of electron-phonon interaction on lattice dynamics in oxide superconductors La 2−x Sr x CuO 4 (LSC) are studied microscopically on the basis of the tight-binding band fitted to the first principle band. Breathing-type vibrations of oxygen atoms in the CuO 2 plane are renormalized significantly at around (π/a, π/a, 0) and (π/a, 0, 0) due to strong dependences of the electron-phonon interaction on wavevectors and phonon modes. In the framework of the usual phonon-mediated pairing mechanism, superconducting properties, such as transition temperatures and tunneling spectra, are studied by solving isotropic Eliashberg equations. The spectral function α2F(ω) has a characteristic structure over a wide energy range below 85 meV. The tunneling conductance d I/ d V and its derivative d 2I/ d V2 calculated have prominent peaks below 40 meV, which show good correspondences to those observed by recent tunneling experiments.

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34

WANG, Y. Y., C. SONG, B. CUI, G. Y. WANG, F. ZENG, and F. PAN. "ROOM-TEMPERATURE ANTIFERROMAGNETIC TUNNELING ANISOTROPIC MAGNETORESISTANCE." SPIN 03, no. 01 (March 2013): 1350005. http://dx.doi.org/10.1142/s2010324713500057.

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We systematically investigate the room-temperature antiferromagnetic tunneling anisotropic magnetoresistance (TAMR) effect in [Pt/Co] / IrMn/AlO x/ Pt vertical tunnel junctions as a function of IrMn thicknesses and field directions. The experimental results indicate that a partial rotation of IrMn moments is triggered by ferromagnetic Co/Pt with the formation of exchange-spring in vertical fields, whereas two distinct modes of positive and negative spin-valve-like signals are detected with different in-plane fields due to the unidirectional anisotropy of IrMn . Electrical transport and magnetization reversal measurements confirm the crucial role of stable antiferromagnetic IrMn moments in the observed TAMR effect, which is profoundly affected by the operation temperature, IrMn thicknesses, magnetic fields and field directions.

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35

Feng, Shenyan, Qiaoxuan Zhang, Jie Yang, Ming Lei, and Ruge Quhe. "Tunneling field effect transistors based on in-plane and vertical layered phosphorus heterostructures *." Chinese Physics B 26, no. 9 (August 2017): 097401. http://dx.doi.org/10.1088/1674-1056/26/9/097401.

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36

Worledge, D. C., and P. L. Trouilloud. "Magnetoresistance measurement of unpatterned magnetic tunnel junction wafers by current-in-plane tunneling." Applied Physics Letters 83, no. 1 (July 7, 2003): 84–86. http://dx.doi.org/10.1063/1.1590740.

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37

Xu, Yang, Zhendong Guo, Huabin Chen, You Yuan, Jiechao Lou, Xiao Lin, Haiyuan Gao, Hongsheng Chen, and Bin Yu. "In-plane and tunneling pressure sensors based on graphene/hexagonal boron nitride heterostructures." Applied Physics Letters 99, no. 13 (September 26, 2011): 133109. http://dx.doi.org/10.1063/1.3643899.

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38

Konobeeva, Natalia, and Mikhail Belonenko. "Conductivity of impurity graphene nanoribbons and gate electric field." Modern Physics Letters B 31, no. 36 (December 13, 2017): 1750340. http://dx.doi.org/10.1142/s0217984917503407.

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In this paper, we investigate the influence of a gate electric field on the tunneling current for the contact of impurity graphene nanoribbon with a metal or quantum dots. Based on the Hamiltonian for graphene in the tight-binding approximation, the density of states is calculated, which allows us to obtain a tunneling current. We analyze the effect of the field magnitude on the detecting possibility of an impurity in the graphene nanoribbon. A sufficient change of current–voltage characteristic (CVC) of the contact is observed, with an increase in the constant electric field applied parallel to the nanoribbon plane.

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39

Andrade, J. E., H. B. Aquiar, and F. Cunha. "Silver Nanoparticles Self Assembled on HOPG: Unusual Behavior as Probed by Scanning Tunneling Microscopy." Microscopy and Microanalysis 11, S03 (December 2005): 158–61. http://dx.doi.org/10.1017/s1431927605051135.

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The controlled construction of nanostructures on solid surfaces for technological applications depends primarily on a deep understanding of the physical chemistry of the interface. Several methods have been devised to grow metallic nanostructures on solid surfaces, notably physical vapor deposition and electrodeposition. The electrochemical method led to the creation of a very promising technology called Electrochemical Step Edge Decoration (ESED) by the Penner group in Irvine, Ca. In this method, metallic nano and mesowires are built through electrochemical deposition on the step edges of the basal plane of Highly Oriented Pyrolytic Graphite (HOPG) [1]. The proposed growth mechanism is based on the Terrace-Ledge-Kink (TLK) model [2], in which the foreign adatoms nucleate the electrochemically induced growth of nanoparticles in the lower plane of step edges. White and collaborators [3], while studying the stability of gold nanoparticles electrodeposited on HOPG, noticed the preferential nucleation on the upper plane of step edges in stark opposition to the TLK model. They proposed that this preferential deposition is associated with a slippage of the atomic layer near the edge. This proposition indicates that the surface in the upper plane near the edge will present a decrease in the atomic distance in the plane, disrupting the registry with the underlying plane. To further assess this proposition we have devised another experimental approach where, instead of electrodepositing foreign adatoms for nucleation and growth, we deposited fully formed silver nanoparticles on HOPG through a Self Assembly mechanism and studied its spatial distribution. Through this approach, we intend to study the surface mobility of nanoparticles, as opposed to atomic species as studied in electrochemical deposition.

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40

RAIKH, M. E., and T. V. SHAHBAZYAN. "HOPPING TRANSPORT ALONG A POTENTIAL WALL: OSCILLATIONS OF THE MAGNETORESISTANCE IN A PARALLEL FIELD." International Journal of Modern Physics B 07, no. 18 (August 15, 1993): 3313–26. http://dx.doi.org/10.1142/s0217979293003243.

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We study the variable-range-hopping magnetoresistance of a 2D system of localized electrons in the presence of a boundary parallel to the plane of the 2D electrons. In a magnetic field B parallel to the plane, the magnetoresistance oscillates with B if the distance between the plane and the boundary is not too large. These oscillations result from the interference of the amplitude of the in-plane tunneling path with the amplitude of the path reflected by the boundary. We show that the orbital shrinkage effect, altering differently both amplitudes, strongly enhances the interference. At the same time, the amplitude of oscillations appears to be small compared to the general increase in the resistance caused by the orbital shrinkage. The most pronounced effect of the interference can be seen in the differential magnetoresistance R−1(B)∂R(B)/∂B, which we analyze numerically.

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41

Oda, M., K. Hoya, N. Abe, M. Yokoyama, N. Momono, T. Nakano, T. Nagata, and M. Ido. "Superconducting Gap in the Tunneling Spectra of High-Tc Cuprates." International Journal of Modern Physics B 12, no. 29n31 (December 20, 1998): 3179–82. http://dx.doi.org/10.1142/s0217979298002295.

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In Bi2212 and La214, the low-T(T ≪ T c ) superconducting gap magnitude 2Δ0 and the temperature dependence of in-plane resistivity ρ were examined over a wide carrier-doping range. In both systems, 2Δ0 increases with lowering doping level and ρ starts decreasing faster around a temperature T*, comparable to the mean-field T c or the onset temperature of a spin-channel singlet formation in the mean-field RVB thory, each of which is given by ~Δ0/2k B .

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NG, K. W., and MARIO FREAMAT. "EXCHANGE FIELD EFFECT ON THE ANDREEV BOUND STATE STUDIED BY FERROMAGNET/HIGH Tc SUPERCONDUCTOR INTERFACE." International Journal of Modern Physics B 19, no. 01n03 (January 30, 2005): 495–97. http://dx.doi.org/10.1142/s021797920502889x.

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We have prepared Ag / BSCCO and Fe / Ag / BSCCO planar junctions to study the effect of Fe exchange field on the tunneling spectra. The junctions were constructed so that the tunneling direction is within the ab-plane, either along the maximum or minimum gap direction. Andreev bound states were observed as zero energy peak in the minimum gap direction. The exchange field caused major splitting of the zero energy peak, which did not occur in Ag / BSCCO junctions. We had detected a few percent (6 to 7%) of s-wave subcomponent at the interface in many of these junctions. This s-wave subcomponent had a Tc of about 20K.

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Snyder, S. R., T. Foecke, H. S. White, and W. W. Gerberich. "Imaging of stacking faults in highly oriented pyrolytic graphite using scanning tunneling microscopy." Journal of Materials Research 7, no. 2 (February 1992): 341–44. http://dx.doi.org/10.1557/jmr.1992.0341.

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Scanning tunneling microscopy images of the (0001) plane of highly oriented pyrolytic graphite show defect regions consisting of an extensive network of partial dislocations that form extended and contracted nodes. The partial dislocations in hexagonal graphite enclose triangular regions (∼1000 nm on a side) of faulted material comprised of rhombohedral graphite. Electronic and elastic interactions of the tip with the HOPG surface are proposed to explain the observed image contrast between hexagonal and rhombohedral graphite.

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Son, S. H., M. G. Kang, S. W. Hwang, J. I. Lee, Y. J. Park, Y. S. Yu, and D. Ahn. "Hybrid integration of GaAs/AlGaAs in-plane-gate resonant tunneling and field effect transistors." Physica E: Low-dimensional Systems and Nanostructures 40, no. 6 (April 2008): 2160–62. http://dx.doi.org/10.1016/j.physe.2007.10.096.

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Genoe, J., K. Fobelets, C. Van Hoof, and G. Borghs. "In-plane dispersion relations of InAs/AlSb/GaSb/AlSb/InAs interband resonant-tunneling diodes." Physical Review B 52, no. 19 (November 15, 1995): 14025–34. http://dx.doi.org/10.1103/physrevb.52.14025.

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Honjo, H., S. Fukami, T. Suzuki, R. Nebashi, N. Ishiwata, S. Miura, N. Sakimura, T. Sugibayashi, N. Kasai, and H. Ohno. "Domain-wall-motion cell with perpendicular anisotropy wire and in-plane magnetic tunneling junctions." Journal of Applied Physics 111, no. 7 (April 2012): 07C903. http://dx.doi.org/10.1063/1.3671437.

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Kane, J., Qun Chen, and K. W. Ng. "Tunneling spectroscopy of BSCCO-2212 single crystal in different angles within the ab-plane." Physica B: Condensed Matter 194-196 (February 1994): 1735–36. http://dx.doi.org/10.1016/0921-4526(94)91367-6.

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Cagliani, Alberto, Frederik W. Østerberg, Ole Hansen, Lior Shiv, Peter F. Nielsen, and Dirch H. Petersen. "Breakthrough in current-in-plane tunneling measurement precision by application of multi-variable fitting algorithm." Review of Scientific Instruments 88, no. 9 (September 2017): 095005. http://dx.doi.org/10.1063/1.4989994.

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BANG, DO, HU-JONG LEE, MYUNG-HO BAE, and WANG-HYUN PARK. "SPIN DEPENDENCE OF PAIR TUNNELING PROPERTIES OF Bi2Sr2CaCu2O8+x INTRINSIC JOSEPHSON JUNCTIONS." International Journal of Modern Physics B 19, no. 01n03 (January 30, 2005): 199–203. http://dx.doi.org/10.1142/s0217979205028220.

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Detailed tunneling characteristics of a stack of intrinsic Josephson junctions in a Bi 2 Sr 2 CaCu 2 O 8+x single crystal were obtained both in spin-degenerate and spin-polarized bias configurations. Injection of the spin-polarized quasiparticles effectively weakened the in-plane superconducting strength and the interlayer Jospehson coupling. The superconducting gap and the Josephson critical current of the stack were, in general, further suppressed by an external field applied in parallel with the c-axis direction. Study of the spin-dependent tunneling characteristics may provide valuable information on clarifying the mechanism of high-Tc superconductivity as well as the interlayer phase fluctuation induced by the "pancake vortices" on CuO 2 layers.

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LUHMAN, D. R., W. PAN, T. M. LU, D. C. TSUI, L. N. PFEIFFER, K. W. BALDWIN, and K. W. WEST. "OBSERVATIONS OF PARALLEL FIELD INDUCED REENTRANT QUANTUM HALL EFFECTS IN WIDE GaAs QUANTUM WELLS." International Journal of Modern Physics B 23, no. 12n13 (May 20, 2009): 2808–12. http://dx.doi.org/10.1142/s0217979209062384.

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We report the results of tilted magnetic field experiments on three high quality wide GaAs quantum wells, with particular emphasis on the N ≥ 1 Landau levels. With an increasing component of in-plane magnetic field, B∥, we observe reentrant behavior for the odd filling factor quantum Hall states. This reentrance is not explained within a single-particle energy level crossing scheme and may be related to the collapse of interlayer tunneling.

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