Academic literature on the topic 'INAES'
Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles
Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'INAES.'
Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.
You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.
Journal articles on the topic "INAES"
Connolly, Warren, Natasha Rafter, Anne Hickey, Ronan Conroy, Sarah Condell, Paul O'Connor, David Vaughan, Gillian Walsh, and David Williams. "37 Impact of Adverse Events on the Older Inpatient Population- A Subgroup Analysis of the Irish National Adverse Events Study (INAES)." Age and Ageing 48, Supplement_3 (September 2019): iii1—iii16. http://dx.doi.org/10.1093/ageing/afz102.06.
Full textConde Bonfil, Carola. "LA POLÍTICA PÚBLICA DE FOMENTO A LA ECONOMÍA SOCIAL EN MÉXICO 2012-2020." Textual, no. 76 (December 28, 2020): 297–345. http://dx.doi.org/10.5154/r.textual.2020.76.12.
Full textCumpson, P. J., M. P. Seah, and S. J. Spencer. "Simple Procedure for Precise Peak Maximum Estimation for Energy Calibration inAES andXPS." Surface and Interface Analysis 24, no. 10 (September 30, 1996): 687–94. http://dx.doi.org/10.1002/(sici)1096-9918(19960930)24:10<687::aid-sia174>3.0.co;2-q.
Full textRodríguez, Leandro, and Elena Beatriz Albornoz. "Impacto socio-económico del núcleo histórico del cooperativismo entrerriano." Ciencia, Docencia y Tecnología 31, no. 60 may-oct (May 22, 2020): 155–87. http://dx.doi.org/10.33255/3160/622.
Full textMiguel Agustín Torres, Miguel Agustín. "La caracterización normativa de las cooperativas sociales en el ordenamiento jurídico argentino. los primeros pasos hacia la configuración de un régimen específico." Anuario de la Facultad de Derecho. Universidad de Extremadura, no. 36 (December 22, 2020): 827–62. http://dx.doi.org/10.17398/2695-7728.36.827.
Full textOviedo Sotelo, Daniel, Lilian Rodríguez, Griselda Andrea Zaracho Román, Arami Cáceres Romero, and Dalia Doralice Díaz Denis. "Percepciones y valoraciones de los estudiantes acerca de la carrera de Ciencias de la Educación en el Instituto Nacional de Educación Superior (INAES) de Asunción, Paraguay." Cuaderno de Pedagogía Universitaria 16, no. 32 (July 19, 2019): 82–99. http://dx.doi.org/10.29197/cpu.v16i32.348.
Full textConnolly, Warren, Natasha Rafter, Ronan M. Conroy, Cornelia Stuart, Anne Hickey, and David J. Williams. "The Irish National Adverse Event Study-2 (INAES-2): longitudinal trends in adverse event rates in the Irish healthcare system." BMJ Quality & Safety 30, no. 7 (January 12, 2021): 547–58. http://dx.doi.org/10.1136/bmjqs-2020-011122.
Full textRafter, Natasha, Anne Hickey, Ronan M. Conroy, Sarah Condell, Paul O'Connor, David Vaughan, Gillian Walsh, and David J. Williams. "The Irish National Adverse Events Study (INAES): the frequency and nature of adverse events in Irish hospitals—a retrospective record review study." BMJ Quality & Safety 26, no. 2 (February 9, 2016): 111–19. http://dx.doi.org/10.1136/bmjqs-2015-004828.
Full textSosa, Gustavo Alberto. "Análisis crítico de las actividades prohibidas para las cooperativas de trabajo en Argentina." Cooperativismo & Desarrollo 27, no. 114 (April 5, 2019): 1–23. http://dx.doi.org/10.16925/2382-4220.2019.01.09.
Full textRafter, N., R. Finn, K. Burns, S. Condell, R. M. Conroy, A. Hickey, P. O'Connor, D. Vaughan, G. Walsh, and D. J. Williams. "Identifying hospital-acquired infections using retrospective record review from the Irish National Adverse Events Study (INAES) and European point prevalence survey case definitions." Journal of Hospital Infection 101, no. 3 (March 2019): 313–19. http://dx.doi.org/10.1016/j.jhin.2018.12.011.
Full textDissertations / Theses on the topic "INAES"
Ma, Pui-wai, and 馬培煒. "Transport properties of InAs/(A1Sb)/GaSb/(A1Sb)/InAs heterostructure systems." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B30474188.
Full textHaudrère, Philippe. "La Compagnie française des Indes au XVIIIe siècle. 1719-1795 /." Paris : Librairie de l'Inde, 1989. http://catalogue.bnf.fr/ark:/12148/cb35040348q.
Full textButera, Silvia. "InAs avalanche photodiodes." Thesis, Heriot-Watt University, 2015. http://hdl.handle.net/10399/3043.
Full textLOPES, ARTUR JORGE DA SILVA. "GROWTH OF QUANTUM DOT TO THE FAMILIES INAS/INP, INAS/INGAAS E INAS/INGAALAS FOR FOTODETECTORS OF INFRARED RADIATION." PONTIFÍCIA UNIVERSIDADE CATÓLICA DO RIO DE JANEIRO, 2007. http://www.maxwell.vrac.puc-rio.br/Busca_etds.php?strSecao=resultado&nrSeq=12288@1.
Full textPontos quânticos (PQs) auto-organizáveis de InAs sobre InP, InGaAs, InGaAlAs utilizando-se substratos de InP foram crescidos pela deposição química de metal-orgânicos (MOCVD) e foram investigadas para fotodetectores. Para PQs de InAs crescidos sobre diferentes substratos de InP, têm-se que a presença de discordâncias é responsável pelo aumento na densidade planar dos PQs. O espectro de fotoluminescência (FL) das estruturas de InP/InxGa1-xAs/InAs/InP, com diferentes composições da camada ternária. Medidas com microscopia de força atômica (AFM) mostraram que os PQs mais altos são obtidos quando os mesmos são crescidos sobre uma camada de InxGa1-xAs com um descasamento de 1000ppm, e a altura decresce com o descasamento a partir deste valor. O espectro de FL dos PQs mostrou uma banda assimétrica, a qual envolve transições entre os níveis de energia dos PQs e pode ser decomposta em dois picos. Pico de energia mais alta desta banda foi observado para a amostra com PQs crescidos sobre uma camada de InxGa1-xAs casada e o pico foi deslocado para energias mais baixas para amostras tensionadas. Estruturas diferentes de PQ de InAs crescidas sobre uma camada de InGaAlAs casada com InP foram investigadas. Picos de fotocorrente extremamente estreitos foram observados, demonstrando um excelente potencial para sintonização estreita de comprimentos de onda. Foram desenvolvidas estruturas para detectar radiação superior à 10μm. Medidas de absorção mostrando uma dependência com a polarização mostraram eu as estruturas tem um confinamento total e são apropriadas para detecção sintonizável de radiação por incidência normal.
Self-assembled InAs quantum dots (QD) over an InP, InGaAs, InGaAlAs on InP substrates were grown by metal-organic chemical vapor deposition (MOCVD) and were investigated for quantum dot infrared photodetectors. For InAs QD over an InP buffer on different InP substrates. The results indicate that the presence of dislocations were responsible for the increase in the QD density. Photoluminescence (PL) spectra of InP/InxGa1-xAs/InAs/InP dot-in-a-well structures, with different compositions of the ternary layer. Measurements with atomic force microscopy showed that the largest QD height is obtained when the InAs QDs are grown on the InxGa1-xAs layer with a mismatch of 1000ppm, and the height decreases as the mismatch departs from this value. PL spectra of the QDs showed an asymmetric band, which involves transitions between dot energy levels and can be deconvoluted into two peaks. The highest energy PL peak of this band was observed for the sample with the QDs grown on top of the lattice-matched InxGa1-xAs and it shifted to lower energies for strained samples as the degree of mismatch increased. Different InAs quantum dot structures grown on InGaAlAs lattice matched to InP. Extremely narrow photocurrent peaks were observed, demonstrating great potential for fine wavelenght selection. Structures which can detect radiation beyond 10ìm were developed. Polarization dependence measurements showed that the structures have a zero- dimensional character and are suitable for detection of normal incidence light.
Haudrère, Philippe. "La Compagnie des Indes, 1719-1795." Lille 3 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37605832d.
Full textHaudrère, Philippe. "La Compagnie des Indes : 1719-1795." Paris 4, 1987. http://www.theses.fr/1987PA040080.
Full textThe second company of India - which follows a first one, founded by Colbert - was constituted on 1719, upon law's authority; it received an important capital and large territories, situated in America, Africa and Asia. Since 1730, it renounced to Louisiana and West Indies, and gave up to trade with India and China. During the same time, it spread its own naval building, and improved the experience of its naval staff. It increased also the bulk of its trade, to such a level that its succeeded in competing with foreign companies. Despite this success, it went into a lot of troubles; the benefit was becoming smaller and smaller as increased the freights, the market of which was reduced, and the goods were sold not easily; loads grew larger and larger during the wars, as ships had to be escorted and factories defended, the company, alone, being obliged to protect them, lacking any governmental help. For those reasons, the colonial staff, suggested to extend the French rule to indian territories, in order to find new means; but shareholders and French government did not agree; consequently, the company could not overcome these difficulties, and was obliged to postpone the trade in 1769
Pfund, Andreas. "Spin states in InAs nanowires /." Zürich : ETH, 2008. http://e-collection.ethbib.ethz.ch/show?type=diss&nr=17861.
Full textHill, Richard John Allan. "Tunnelling into InAs quantum dots." Thesis, University of Nottingham, 2003. http://eprints.nottingham.ac.uk/10002/.
Full textOhlsen, Niels [Verfasser], Ines [Akademischer Betreuer] Weller, Ines [Gutachter] Weller, and Uwe [Gutachter] Engel. "Klimawandelbewusstsein und Akzeptanz erneuerbarer Energien / Niels Ohlsen ; Gutachter: Ines Weller, Uwe Engel ; Betreuer: Ines Weller." Bremen : Staats- und Universitätsbibliothek Bremen, 2018. http://d-nb.info/118840640X/34.
Full textKeenan, Adeline. "Michael Innes/J.I.M. Stewart : "A don's delight" /." Title page, contents and introduction only, 1995. http://web4.library.adelaide.edu.au/theses/09AR/09ark259.pdf.
Full textBooks on the topic "INAES"
Iwona, Blazwick, Institute of Contemporary Arts, and Scottish National Gallery of Modern Art., eds. Callum Innes. London: Institute of Contemporary Arts in association with Frith Street Gallery, 1992.
Find full textBook chapters on the topic "INAES"
Vertovec, Steven. "Route-ines." In Diversities Old and New, 171–92. London: Palgrave Macmillan UK, 2015. http://dx.doi.org/10.1057/9781137495488_11.
Full textFernandes da Silva, E. C. "InAs: mobility." In New Data and Updates for III-V, II-VI and I-VII Compounds, 213. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_160.
Full textBunt, A. C. "John Innes composts." In Media and Mixes for Container-Grown Plants, 235–47. Dordrecht: Springer Netherlands, 1988. http://dx.doi.org/10.1007/978-94-011-7904-1_11.
Full textWeckwerth, Jan. "Die durch die Hölle gehen." In Kulturen der Gesellschaft, 343–74. Bielefeld, Germany: transcript Verlag, 2021. http://dx.doi.org/10.14361/9783839452165-015.
Full textda Silva, E. C. F. "InAs: Seebeck coefficient." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors, 197–98. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_116.
Full textStrauch, D. "InAs: lattice parameters." In New Data and Updates for IV-IV, III-V, II-VI and I-VII Compounds, their Mixed Crystals and Diluted Magnetic Semiconductors, 200. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-14148-5_118.
Full textFernandes da Silva, E. C. "InAs: band structure." In New Data and Updates for III-V, II-VI and I-VII Compounds, 203. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_150.
Full textFernandes da Silva, E. C. "InAs: energy gap." In New Data and Updates for III-V, II-VI and I-VII Compounds, 211. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_158.
Full textFernandes da Silva, E. C. "InAs: phonon frequencies." In New Data and Updates for III-V, II-VI and I-VII Compounds, 212. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_159.
Full textFernandes da Silva, E. C. "InAs: drift velocity." In New Data and Updates for III-V, II-VI and I-VII Compounds, 215. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-540-92140-0_162.
Full textConference papers on the topic "INAES"
"Front cover page." In 2016 6th International Annual Engineering Seminar (InAES). IEEE, 2016. http://dx.doi.org/10.1109/inaes.2016.7821891.
Full text"Front matter." In 2016 6th International Annual Engineering Seminar (InAES). IEEE, 2016. http://dx.doi.org/10.1109/inaes.2016.7821892.
Full text"Welcome messages." In 2016 6th International Annual Engineering Seminar (InAES). IEEE, 2016. http://dx.doi.org/10.1109/inaes.2016.7821893.
Full text"Committees." In 2016 6th International Annual Engineering Seminar (InAES). IEEE, 2016. http://dx.doi.org/10.1109/inaes.2016.7821894.
Full text"Table of contents." In 2016 6th International Annual Engineering Seminar (InAES). IEEE, 2016. http://dx.doi.org/10.1109/inaes.2016.7821895.
Full textTroy, Pranowo, and Samuel Gandang Gunanto. "2D to 3D space transformation for facial animation based on marker data." In 2016 6th International Annual Engineering Seminar (InAES). IEEE, 2016. http://dx.doi.org/10.1109/inaes.2016.7821896.
Full textHansun, Seng. "A comparative study on WEMA and H-WEMA forecasting methods in time series analysis (case study: JKSE composite index data)." In 2016 6th International Annual Engineering Seminar (InAES). IEEE, 2016. http://dx.doi.org/10.1109/inaes.2016.7821897.
Full textAriyanti, Siti Witty, Ary Setijadi Prihatmanto, Yoga Priyana, and Chang Soo Kim. "A development of non-invasive optical technique to investigate the feasibility of fatigue using skin color extraction." In 2016 6th International Annual Engineering Seminar (InAES). IEEE, 2016. http://dx.doi.org/10.1109/inaes.2016.7821898.
Full textAulya, Rafinno, Hilwadi Hindersah, Ary Setijadi Prihatmanto, and Kyung Hyune Rhee. "An authenticated passengers based on dynamic QR Code for Bandung Smart Transportation Systems." In 2016 6th International Annual Engineering Seminar (InAES). IEEE, 2016. http://dx.doi.org/10.1109/inaes.2016.7821900.
Full textPamungkas, Endang Wahyu, and Divi Galih Prasetyo Putri. "An experimental study of lexicon-based sentiment analysis on Bahasa Indonesia." In 2016 6th International Annual Engineering Seminar (InAES). IEEE, 2016. http://dx.doi.org/10.1109/inaes.2016.7821901.
Full textReports on the topic "INAES"
Nosho, B. Z., B. R. Bennett, L. J. Whitman, and M. Goldenberg. Spontaneous Growth of an InAs Nanowire Lattice in an InAs/GaSb Superlattice. Fort Belvoir, VA: Defense Technical Information Center, August 2002. http://dx.doi.org/10.21236/ada447719.
Full textSchultz, Peter Andrew. Simple intrinsic defects in InAs :. Office of Scientific and Technical Information (OSTI), March 2013. http://dx.doi.org/10.2172/1095951.
Full textIkossi, Kiki. InAs Device Process Development and Characterization. Fort Belvoir, VA: Defense Technical Information Center, May 2003. http://dx.doi.org/10.21236/ada413747.
Full textSantori, Charles, David Fattal, Jelena Vuckovic, Glenn S. Solomon, and Yoshihisa Yamamoto. Single-Photon Generation With InAs Quantum Dots. Fort Belvoir, VA: Defense Technical Information Center, August 2004. http://dx.doi.org/10.21236/ada426389.
Full textSchultz, Peter A. Defect reaction network in Si-doped InAs: Numerical predictions. Office of Scientific and Technical Information (OSTI), May 2015. http://dx.doi.org/10.2172/1182682.
Full textWang, Wen I. InAs HVT for Extremely Low Power and High Speed Applications. Fort Belvoir, VA: Defense Technical Information Center, July 2005. http://dx.doi.org/10.21236/ada438567.
Full textChow, Peter P. InAs/GaInSb Based Detectors Sensitive to Radiation Beyond 15 microns. Fort Belvoir, VA: Defense Technical Information Center, September 2000. http://dx.doi.org/10.21236/ada382058.
Full textFolkes, P. A., J. Little, S. Svensson, and K. Olver. Low Temperature Photoluminescence and Leakage Current Characteristics of InAs-GaSb Superlattice Photodiodes. Fort Belvoir, VA: Defense Technical Information Center, September 2008. http://dx.doi.org/10.21236/ada486120.
Full textNiederschulte, Mark, Kelly Russell, and Keith Connors. DOE-INES New Planet Bioenergy Technical Report Final Public Version 7-22-16. Office of Scientific and Technical Information (OSTI), July 2016. http://dx.doi.org/10.2172/1268295.
Full textZhang, Yong-Hang. Study of Defect Levels in InAs/InAsSb Type-II Superlattice Using Pressure-Dependent Photoluminescence. Fort Belvoir, VA: Defense Technical Information Center, June 2015. http://dx.doi.org/10.21236/ad1001384.
Full text