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Academic literature on the topic 'Independent-gate Asymmetric Double Gate MOSFET'
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Journal articles on the topic "Independent-gate Asymmetric Double Gate MOSFET"
Wei, Zhaoxiang, Hao Fu, Xiaowen Yan, et al. "Influence of Different Device Structures on the Degradation for Trench-Gate SiC MOSFETs: Taking Avalanche Stress as an Example." Materials 15, no. 2 (2022): 457. http://dx.doi.org/10.3390/ma15020457.
Full textSingh, Ajay Kumar. "Modeling of electrical behavior of undoped symmetric Double-Gate (DG) MOSFET using carrier-based approach." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 38, no. 2 (2019): 815–28. http://dx.doi.org/10.1108/compel-08-2018-0327.
Full textAbebe, H., E. Cumberbatch, H. Morris, V. Tyree, T. Numata, and S. Uno. "Symmetric and Asymmetric Double Gate MOSFET Modeling." JSTS:Journal of Semiconductor Technology and Science 9, no. 4 (2009): 225–32. http://dx.doi.org/10.5573/jsts.2009.9.4.225.
Full textZou, Yuan, Jue Wang, Hongyi Xu, and Hengyu Wang. "Investigation of SiC Trench MOSFETs’ Reliability under Short-Circuit Conditions." Materials 15, no. 2 (2022): 598. http://dx.doi.org/10.3390/ma15020598.
Full textJung, Hakkee. "Threshold voltage roll-off for sub-10 nm asymmetric double gate MOSFET." International Journal of Electrical and Computer Engineering (IJECE) 9, no. 1 (2019): 163. http://dx.doi.org/10.11591/ijece.v9i1.pp163-169.
Full textJung, Hakkee. "Analysis for Gate Oxide Dependent Subthreshold Swing of Asymmetric Double Gate MOSFET." Journal of the Korea Institute of Information and Communication Engineering 18, no. 4 (2014): 885–90. http://dx.doi.org/10.6109/jkiice.2014.18.4.885.
Full textJung, Hakkee. "Analysis of subthreshold swing in junctionless double gate MOSFET using stacked high-k gate oxide." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 1 (2021): 240. http://dx.doi.org/10.11591/ijece.v11i1.pp240-248.
Full textJung, Hakkee. "Bottom Gate Voltage Dependent Threshold Voltage Roll-off of Asymmetric Double Gate MOSFET." Journal of the Korea Institute of Information and Communication Engineering 18, no. 6 (2014): 1422–28. http://dx.doi.org/10.6109/jkiice.2014.18.6.1422.
Full textOrtiz-Conde, Adelmo, and Francisco J. García-Sánchez. "Generic complex-variable potential equation for the undoped asymmetric independent double-gate MOSFET." Solid-State Electronics 57, no. 1 (2011): 43–51. http://dx.doi.org/10.1016/j.sse.2010.10.023.
Full textJung, Hakkee. "Subthreshold Swing for Top and Bottom Gate Voltage of Asymmetric Double Gate MOSFET." Journal of the Korea Institute of Information and Communication Engineering 18, no. 3 (2014): 657–62. http://dx.doi.org/10.6109/jkiice.2014.18.3.657.
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