Journal articles: 'INDIUM 11'

1

Cummings, Kristin J., Makiko Nakano, Kazuyuki Omae, et al. "Indium Lung Disease." Chest 141, no. 6 (2012): 1512–21. http://dx.doi.org/10.1378/chest.11-1880.

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2

Miyauchi, Hiroyuki, Aoi Minozoe, Shigeru Tanaka, et al. "Assessment of Workplace Air Concentrations of Indium Dust in an Indium‐recycling Plant." Journal of Occupational Health 54, no. 2 (2012): 103–11. http://dx.doi.org/10.1539/joh.11-0233-oa.

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3

Smith, A. B., P. T. Guenther, J. F. Whalen, I. J. van Heerden, and W. R. McMurray. "Fast-neutron scattering from indium." Journal of Physics G: Nuclear Physics 11, no. 1 (1985): 125–41. http://dx.doi.org/10.1088/0305-4616/11/1/018.

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4

Cao, Yong Ge, Lei Miao, Sakae Tanemura, Yasuhiko Hayashi, and Masaki Tanemura. "Effects of Indium Incorporation on the Optical Properties of ZnO Films." Advanced Materials Research 11-12 (February 2006): 159–62. http://dx.doi.org/10.4028/www.scientific.net/amr.11-12.159.

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Transparent indium-doped ZnO (IZO) films with low In content (<6at%) were fabricated through radio-frequency (rf) helicon magnetron sputtering. Formation of In-Zn-O solid solution was confirmed by X-ray diffraction (XRD) patterns. Incorporation of indium into ZnO films enhances the optical transmission in the visible wavelength. The optical band-gaps slightly increase from 3.25eV (ZnO) to 3.28eV (In0.04Zn0.96O) and to 3.30eV (In0.06Zn0.94O) due to Burstain-Moss effect. The Urbach tail parameter E0, which is believed to be a function of structural disorder, increases from 79meV (ZnO), to 146meV (In0.04Zn0.96O), and to 173meV (In0.06Zn0.94O), which is consistent with increase of Full-Width Half-Maximum (FWHM) in corresponding XRD patterns. Decreasing in crystal quality with increasing indium concentration is also confirmed by photoluminescence spectra.

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Subash, T. D., and T. Gnanasekaran. "Indium antimonide based HEMT for RF applications." Journal of Semiconductors 35, no. 11 (2014): 113004. http://dx.doi.org/10.1088/1674-4926/35/11/113004.

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6

Huang, Qiuping, Gaowei Xu, Gang Quan, Yuan Yuan, and Le Luo. "Electroplated indium bump arrays and the bonding reliability." Journal of Semiconductors 31, no. 11 (2010): 116004. http://dx.doi.org/10.1088/1674-4926/31/11/116004.

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7

Chitsaz, Soheila, and Bernhard Neumüller. "Organometallische Alkoxo–Indium-Käfigverbindungen." Zeitschrift für anorganische und allgemeine Chemie 627, no. 11 (2001): 2451. http://dx.doi.org/10.1002/1521-3749(200111)627:11<2451::aid-zaac2451>3.0.co;2-h.

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8

Liang, Zongwen, Xiong Zhang, Qian Dai, et al. "Indium-surfactant-assisted epitaxial growth of semi-polar $$\left(11\overline{2}2\right)$$ 11 2 ¯ 2 plane Al0.42Ga0.58N films." Journal of Materials Science: Materials in Electronics 28, no. 20 (2017): 15217–23. http://dx.doi.org/10.1007/s10854-017-7399-z.

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9

von Hänisch, Carsten, and Birgit Rolli. "Synthese und Charakterisierung neuer cyclischer und käfigartiger Indium-Phosphor- und Indium-Arsen-Verbindungen." Zeitschrift für anorganische und allgemeine Chemie 628, no. 11 (2002): 2255–58. http://dx.doi.org/10.1002/1521-3749(200211)628:11<2255::aid-zaac2255>3.0.co;2-#.

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10

Cai, Wen, Yinsheng Zhao, Jie Hu, Jiasong Zhong, and Weidong Xiang. "Solvothermal Synthesis and Characterization of Zinc Indium Sulfide Microspheres." Journal of Materials Science & Technology 27, no. 6 (2011): 559–62. http://dx.doi.org/10.1016/s1005-0302(11)60108-4.

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11

Fritzsch, T., F. Kavianpour, M. Rothermund, H. Oppermann, O. Ehrmann, and K. D. Lang. "Investigation of low temperature bonding process using indium bumps." Journal of Instrumentation 13, no. 11 (2018): C11007. http://dx.doi.org/10.1088/1748-0221/13/11/c11007.

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12

Ghosh, Sujoy, Prasanna D. Patil, Milinda Wasala, et al. "Fast photoresponse and high detectivity in copper indium selenide (CuIn 7 Se 11 ) phototransistors." 2D Materials 5, no. 1 (2017): 015001. http://dx.doi.org/10.1088/2053-1583/aa888c.

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13

Chitsaz, Soheila, Effat Iravani, and Bernhard Neumüller. "Sesquialkoxide von Gallium und Indium." Zeitschrift für anorganische und allgemeine Chemie 628, no. 11 (2002): 2279–85. http://dx.doi.org/10.1002/1521-3749(200211)628:11<2279::aid-zaac2279>3.0.co;2-8.

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14

Wu, Xuefei, Tianpei Huang, Qingyin Wu, and Lin Xu. "Synthesis and conductive performance of indium-substituted ternary heteropoly acids with Keggin structures." Dalton Transactions 45, no. 1 (2016): 271–75. http://dx.doi.org/10.1039/c5dt02541a.

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Keggin-type ternary polyoxometalates H4[In(H2O)PW11O39]·11H2O and H5[In(H2O)SiW11O39]·8H2O are solid high-proton conductors with a conductivity of 2.60 × 10−4 S cm−1 and 5.25 × 10−4 S cm−1, respectively, at 18 °C and 80% relative humidity.

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15

Lu, Xifeng, and Longwei Yin. "Porous Indium Oxide Nanorods: Synthesis, Characterization and Gas Sensing Properties." Journal of Materials Science & Technology 27, no. 8 (2011): 680–84. http://dx.doi.org/10.1016/s1005-0302(11)60125-4.

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16

Derollez, P., R. Fouret, A. Laamyem, B. Hennion, and J. Gonzalez. "Lattice dynamics in copper indium diselenide by inelastic neutron scattering." Journal of Physics: Condensed Matter 11, no. 20 (1999): 3987–95. http://dx.doi.org/10.1088/0953-8984/11/20/305.

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17

ADAM, Farook, and Kei Lin SEK. "Heterogenization of Indium for the Friedel-Craft Benzoylation of Toluene." Chinese Journal of Catalysis 33, no. 11-12 (2012): 1802–8. http://dx.doi.org/10.1016/s1872-2067(11)60453-1.

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18

SATO, Yukari, and Kohei UOSAKI. "Formation and Electrochemical Characteristics of Self-Assembled Monolayer of 11-Ferrocenylundecanethiol on Indium-Tin-Oxide." Denki Kagaku oyobi Kogyo Butsuri Kagaku 62, no. 12 (1994): 1269–75. http://dx.doi.org/10.5796/electrochemistry.62.1269.

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19

Das, A., S. Magalhães, Y. Kotsar, et al. "Indium kinetics during the plasma-assisted molecular beam epitaxy of semipolar (11−22) InGaN layers." Applied Physics Letters 96, no. 18 (2010): 181907. http://dx.doi.org/10.1063/1.3427310.

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20

Nakano, Makiko, Kazuyuki Omae, Akiyo Tanaka, and Miyuki Hirata. "Possibility of lung cancer risk in indium‐exposed workers: An 11‐year multicenter cohort study." Journal of Occupational Health 61, no. 3 (2019): 251–56. http://dx.doi.org/10.1002/1348-9585.12050.

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21

Rauf, I. A. "Effects of dopant concentration on the microstructure of tin- doped indium oxide thin films." Proceedings, annual meeting, Electron Microscopy Society of America 48, no. 4 (1990): 716–17. http://dx.doi.org/10.1017/s042482010017671x.

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To understand the electronic conduction mechanism in Sn-doped indium oxide thin films, it is important to study the effect of dopant atoms on the neighbouring indium oxide lattice. Ideally Sn is a substitutional dopant at random indium sites. The difference in valence (Sn4+ replaces In3+) requires that an extra electron is donated to the lattice and thus contributes to the free carrier density. But since Sn is an adjacent member of the same row in the periodic table, the difference in the ionic radius (In3+: 0.218 nm; Sn4+: 0.205 nm) will introduce a strain in the indium oxide lattice. Free carrier electron waves will no longer see a perfect periodic lattice and will be scattered, resulting in the reduction of free carrier mobility, which will lower the electrical conductivity (an undesirable effect in most applications).One of the main objectives of the present investigation is to understand the effects of the strain (produced by difference in the ionic radius) on the microstructure of the indium oxide lattice when the doping level is increased to give high carrier densities. Sn-doped indium oxide thin films were prepared with four different concentrations: 9, 10, 11 and 12 mol. % of SnO2 in the starting material. All the samples were prepared at an oxygen partial pressure of 0.067 Pa and a substrate temperature of 250°C using an Edwards 306 coating unit with an electron gun attachment for heating the crucible. These deposition conditions have been found to give optimum electrical properties in Sn-doped indium oxide films. A JEOL 2000EX transmission electron microscope was used to investigate the specimen microstructure.

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22

Zheng, Yanbin, Guang Li, Wenlong Wang, Xiuchang Li, and Zhigang Jiang. "Dry Etching Characteristics of Amorphous Indium-Gallium-Zinc-Oxide Thin Films." Plasma Science and Technology 14, no. 10 (2012): 915–18. http://dx.doi.org/10.1088/1009-0630/14/10/11.

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23

Fellows, Natalie, Hitoshi Sato, Hisashi Masui, Steven P. DenBaars, and Shuji Nakamura. "Increased Polarization Ratio on Semipolar (11\bar22) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition." Japanese Journal of Applied Physics 47, no. 10 (2008): 7854–56. http://dx.doi.org/10.1143/jjap.47.7854.

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24

Shen, Teng, Dongxing Zhang, Liu Huang, and Jiong Wang. "An automatic-recovery inertial switch based on a gallium-indium metal droplet." Journal of Micromechanics and Microengineering 26, no. 11 (2016): 115016. http://dx.doi.org/10.1088/0960-1317/26/11/115016.

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25

Huang, Yuyang, Yuxiang Zhang, Zhizhen Yin, et al. "Indium bump array fabrication on small CMOS circuit for flip-chip bonding." Journal of Semiconductors 32, no. 11 (2011): 115014. http://dx.doi.org/10.1088/1674-4926/32/11/115014.

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26

Yankovich, A., A. Kvit, X. Li, et al. "Indium Composition Variation in Nominally Uniform InGaN Layers Discovered by Aberration-Corrected Z-contrast STEM." Microscopy and Microanalysis 17, S2 (2011): 1386–87. http://dx.doi.org/10.1017/s143192761100780x.

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27

Posthill, J. B., D. P. Malta, R. Pickett, M. L. Timmons, T. P. Humphreys, and R. J. Markunas. "Recent advances in heteroepitaxial Ge/Si(100) and Ge/Si(l 11)." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 838–39. http://dx.doi.org/10.1017/s0424820100171924.

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Heteroepitaxial Ge-on-Si could have many applications which include: high mobility p-channel fieldeffect transistors (FETs), large area Ge-based IR or X-ray detectors, or as a substrate for the growth of other epitaxial semiconductors. In particular, the close lattice match between Ge and GaAs and Ge and ZnSe offers a potential for Ge to be used as an interlayer for a GaAs/Si or ZnSe/Si technology.Additionally, with the Si substrate as the "foundation" for further epitaxial semiconductors, thereisa built-in thermal match for any device that must be intimately bonded to Si-based circuitry. Thisis particularly critical in the case of HgCdTe IR focal plane arrays that are indium bump-bonded to aSi multiplexer which will experience thermal cycling in use. This contribution briefly reviews some ofour recent results in the high temperature growth of Ge epitaxial films on Si(100) and Si(l 11) substrates which are being developed for use as a template for HgCdTe/CdZnTe growth.

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28

Uhl, Werner, and Malte Prött. "Insertion von Rhodizonsäure in die Gallium-Gallium- bzw. Indium-Indium-Bindungen von Digallan(4)- bzw. Diindan(4)-Verbindungen." Zeitschrift für anorganische und allgemeine Chemie 628, no. 11 (2002): 2259–63. http://dx.doi.org/10.1002/1521-3749(200211)628:11<2259::aid-zaac2259>3.0.co;2-c.

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29

Temiz, N. H., A. Hengel, and M. Ünlü. "Myocardial indium-111-antimyosin uptake in essential hypertension." Nuklearmedizin 42, no. 03 (2003): 99–103. http://dx.doi.org/10.1055/s-0038-1625305.

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SummaryAim: Evaluation of myocardial uptake of 111In-anti-myosin antibodies in patients with essential hypertension for the verification of our hypothesis that it may increase in stage 1 in the left ventricle as a result of myocardial damage. Patients, methods: Twelve men (mean age: 59 ± 2.4 years) suffering from angina like symptoms and essential hypertension in clinical stage 1 according to the JNC-VI criteria were included into the study. These patients showed normal perfusion as revealed by thallium-201 myocardial study and coronary angiography. Left ventricular mass index was determined in echocardiography. Planar antimyosin images were obtained 48 h after the intravenous injection of the tracer. Heart to lung ratios were calculated as a parameter of myocardial tracer uptake using appropriate region of interests; values >1.52 were considered as abnormal. Results: We observed increased anti-myosin uptake (mean: 1.71 ± 0.12) consistent with myocardial damage in 11 of 12 patients. Nine of 12 patients had a left ventricular hypertrophy with left ventricular mass index values (mean: 131 g/m2 ± 9.48) above 115 g/m2. Heart to lung ratio was correlated significantly to left ventricular mass index (r = 0.902, p <0.001) and duration of hypertension (r = 0.948, p <0.001). Conclusion: Our results suggest that 111In-antimyosin imaging may indicate myocyte damage in early phases of hypertensive heart disease.

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30

Auchet, J., A. Rhazi, and J. G. Gasser. "Electrical resistivity and absolute thermoelectric power of liquid indium-nickel-manganese ternary alloys." Journal of Physics: Condensed Matter 11, no. 15 (1999): 3043–50. http://dx.doi.org/10.1088/0953-8984/11/15/010.

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31

Xue, Junjun, Qing Cai, Baohua Zhang, et al. "Structural characterization of indium-rich nanoprecipitate in InGaN V-pits formed by annealing." Chinese Physics B 26, no. 11 (2017): 116801. http://dx.doi.org/10.1088/1674-1056/26/11/116801.

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32

Pugh, J. R., Y.-L. D. Ho, P. J. Heard, et al. "Design and fabrication of a midinfrared photonic crystal defect cavity in indium antimonide." Journal of Optics A: Pure and Applied Optics 11, no. 5 (2009): 054006. http://dx.doi.org/10.1088/1464-4258/11/5/054006.

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33

Castro-Rodríguez, R., M. Zapata-Torres, V. Rejón Moo, P. Bartolo-Pérez, and J. L. Peña. "Evidence of scattering effects on the thermal transport in indium-doped CdTe films." Journal of Physics D: Applied Physics 32, no. 11 (1999): 1194–97. http://dx.doi.org/10.1088/0022-3727/32/11/302.

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34

Fellows, Natalie, Hitoshi Sato, Hisashi Masui, Steven P. DenBaars, and Shuji Nakamura. "Erratum: “Increased Polarization Ratio on Semipolar (11\bar22) InGaN/GaN Light-Emitting Diodes with Increasing Indium Composition”." Japanese Journal of Applied Physics 48, no. 4 (2009): 049201. http://dx.doi.org/10.1143/jjap.48.049201.

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35

Choi, Jun-Ho, Seung-Hye Baek, Hee-Wung Kim, Hyunseok Na, and Sung-Nam Lee. "Indium Localization‐Induced Red, Green, and Blue Emissions of Semipolar (11‐22) GaN‐Based Light‐Emitting Diodes." physica status solidi (a) 217, no. 19 (2020): 2000219. http://dx.doi.org/10.1002/pssa.202000219.

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36

Bengel, Frank M., Herbert Feistel, Werner Moshage, Kurt Bachmann, and Friedrich Wolf. "Myocardial damage assessed by indium-1 11-antimyosin: correlation with persistent enteroviral ribonucleic acid in dilated cardiomyopathy." European Journal of Nuclear Medicine 24, no. 9 (1997): 1128–31. http://dx.doi.org/10.1007/bf01254244.

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37

Muslimov, A. E., and V. M. Kanevski. "Photoconductivity of indium oxide films dopped by Ga in ultraviolet spectral region." Perspektivnye Materialy, no. 11 (2018): 33–38. http://dx.doi.org/10.30791/1028-978x-2018-11-33-38.

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38

Guo, Yao, Taixuan Jia, Chengbo Li, Yongsheng Niu, Shaogang Hou, and Shuanjiang Liu. "Theoretical Investigation on Structural and Electronic Properties of InN Growth on Ce-Stabilized Zirconia (111) Substrates." Advances in Condensed Matter Physics 2016 (2016): 1–7. http://dx.doi.org/10.1155/2016/9435387.

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The structural and electronic properties of InN on Ce-stabilized zirconia (CeSZ) (111) substrates are investigated using first-principles calculations based on density functional theory with GGA +Umethod. Surface energy calculations indicate that the structure of Ce-segregated surface is more energetically stable than that of Ce-segregation-free surface. Adsorption energies of indium and nitrogen atoms on both Ce-segregated and Ce-segregation-free CeSZ (111) surfaces at the initial growth stage have been studied. The results suggest that the first layer of InN films consists of a nitrogen layer, which leads to epitaxial relationships between InN (0001) // CeSZ (111) and InN[112¯0]// CeSZ[11¯0]. In addition, density of states (DOS) analysis revealed that the hybridization effect plays a crucial role in determining the interface structure for the growth of InN on CeSZ (111) surfaces. Furthermore, adsorption energies of indium atoms on the nitrogen layer have also been evaluated in order to investigate the lattice polarity determination for InN films. It was found that an indium atom preferentially adsorbs at the center of three nitrogen atoms stacked on the CeSZ substrate, which results in the formation of In-polarity InN.

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39

Veith, M., and J. Pöhlmann. "Stickstoffverbindungen von Elementen der dritten Hauptgruppe mit intra- und intermolekularen Donor-Akzeptor-Bindungen, V [1]. Spezielle Gallium- und Indiumamide mit Alkoxogruppen / Nitrogen Compounds of Elements of the Third Main Group with Intra- and Intermolecular Donor Acceptor Bonds, V [1]. Special Gallium and Indium Amides with Alkoxo Groups." Zeitschrift für Naturforschung B 43, no. 5 (1988): 505–12. http://dx.doi.org/10.1515/znb-1988-0502.

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AbstractThe lithium alkoxoamidosilane (Me2Si(OtBu)(NtBu)Li)2 (4) and its trimethyltin derivative Me2Si(OtBu)(NtBu)SnMe3 (7) have been used, to introduce the ligand Me2Si(OtBu)(NtBu) = L into molecular compounds of gallium and indium. The following molecules were synthesized: L-M(Me)Cl (M = Ga (5), In (6)), L-InMe2 (8), L-InX2 (X = Cl (9), Br (10)), L2InX (X = Cl (11), Br (12)) and L2Ga2Cl2 (22). The ligand L is assumed to chelate the metal atom on the basis of temperature dependent 1H NMR spectra. The chelating effect is more pronounced in the gallium derivatives than in the indium analogues. Equilibria between L2InX/InX3 and LInX2 have been observed in diethylether solutions. No metal(I) derivatives LGa or LIn could be isolated. L2Ga2Cl2 (22), formally containing gallium(ll), can be sublimed without decomposition at 110 °C in vacuo.

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40

Tanaka, Akiyo, Miyuki Hirata, Masaharu Shiratani, Kazunori Koga, and Yutaka Kiyohara. "Subacute Pulmonary Toxicity of Copper Indium Gallium Diselenide Following Intratracheal Instillations into the Lungs of Rats." Journal of Occupational Health 54, no. 3 (2012): 187–95. http://dx.doi.org/10.1539/joh.11-0164-oa.

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41

Gómez, Antonio, Alicia Rodríguez Llorente, Rosario María Mosquera, Pedro Del Castillo, and Juan Carlos Stockert. "Indium (III)-hematoxylin as a staining and contrasting agent for light and electron microscopy." Acta Histochemica 90, no. 2 (1991): 197–203. http://dx.doi.org/10.1016/s0065-1281(11)80060-7.

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42

Takenaka, T., A. Petric, and M. L. Saboungi. "Thermodynamic properties and phase equilibria of the potassium-indium system by electromotive force measurements." Journal of Physics: Condensed Matter 3, no. 11 (1991): 1603–12. http://dx.doi.org/10.1088/0953-8984/3/11/018.

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43

Song, Ki-Ryoung, Chu-Young Cho, and Sung-Nam Lee. "Effect of a patterned sapphire substrate on indium localization in semipolar (11-22) GaN-based light-emitting diodes." Thin Solid Films 707 (August 2020): 138077. http://dx.doi.org/10.1016/j.tsf.2020.138077.

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44

Zdansky, K., L. Pekarek, and P. Hlidek. "Pure and intentionally doped indium phosphide wafers treated by long time annealing at high temperatures." Semiconductor Science and Technology 18, no. 11 (2003): 938–44. http://dx.doi.org/10.1088/0268-1242/18/11/305.

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45

Xue-Jin, Wang, Fei Yun-Jie, Xiong Yan-Yun, Nie Yu-Xin, Feng Ke-An, and Li Lin-De. "Vanadium oxide thin films deposited on indium tin oxide glass by radio-frequency magnetron sputtering." Chinese Physics 11, no. 7 (2002): 737–40. http://dx.doi.org/10.1088/1009-1963/11/7/317.

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46

Song, I., D.-H. Oh, J. H. Nam, et al. "Indium-induced triple-period atomic wires on a vicinal Si(111) surface: In/Si(557)." New Journal of Physics 11, no. 6 (2009): 063034. http://dx.doi.org/10.1088/1367-2630/11/6/063034.

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47

Levine, Stuart Eric, Charles E. Neagle, John L. Esterhai, Douglas Gregory Wright, and Murray K. Dalinka. "Magnetic Resonance Imaging for the Diagnosis of Osteomyelitis in the Diabetic Patient with a Foot Ulcer." Foot & Ankle International 15, no. 3 (1994): 151–56. http://dx.doi.org/10.1177/107110079401500311.

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Twenty-seven diabetic patients (12 males and 15 females) with clinically suspected osteomyelitis complicating soft tissue infection of the foot underwent 29 magnetic resonance imaging studies of the suspected lesion. Of these patients, 26 had plain film radiographs, 11 had technetium bone scanning, and 12 had indium-labeled leukocyte scintigraphy performed within 2 weeks of the magnetic resonance imaging. Definitive diagnosis of the presence or absence of osteomyelitis was obtained on the basis of surgical findings, histological evidence, or resolution with nonoperative therapy. Magnetic resonance imaging was 90% accurate (sensitivity 77%, specificity 100%) in the diagnosis of osteomyelitis in this patient population. Technetium bone scan was 45% accurate (sensitivity 100%, specificity 25%); indium-labeled leukocyte scintigraphy was 50% accurate (80% sensitivity, 29% specificity); and plain film roentgenography was 73% accurate (60% sensitivity, 81% specificity). Magnetic resonance imaging is a powerful, noninvasive tool for determining the presence or absence of osteomyelitis in the patient with a diabetic foot ulcer.

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48

Brown, Martyn A., Dennis G. Tuck, and Edward J. Wells. "Spectroscopic and crystallographic studies of phosphino adducts of indium(III) iodide." Canadian Journal of Chemistry 74, no. 8 (1996): 1535–49. http://dx.doi.org/10.1139/v96-171.

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Indium(III) iodide forms both 1:1 and 1:2 adducts with triphenylphosphine, depending on the reaction conditions, and especially on the solvent used. The complex InI3•PPh3 involves four-coordination at indium; the structure is trigonal, with a = 15.105(4) Å, c = 16.769(7) Å, V = 3313(2) Å3, Z = 6, and space group [Formula: see text]. Crystals were also obtained in which InI3•PPh3 and InI3(PPh3)2 are present in a 1:1 ratio; these are also trigonal, a = 15.473(4) Å, c = 41.701(7) Å, V = 8646.1(1.8) Å3,Z = 3 + 3 and space group [Formula: see text]. The 1:2 adduct has approximately D3h symmetry in the InI3P2 kernel. The bond distances and angles are discussed; in particular, the In—P bonds are extremely weak in the 1:2 adduct. This compound has been shown by 31P NMR to undergo complete dissociation in solution to InI3•PPh3 and PPh3. The addition of R4NI (R = n-C3H7, n-C4H9) causes quantitative conversion to InI4− and free Ph3P. Similar experiments are reported for the compound InI3(dppe) (dppe = 1,2-bis(diphenylphosphino)ethane), whose structure is an infinite chain of InI3 units linked through In-P-C2H4-P-In coordination. The crystal structure showed that InI3(dppe) cocrystallizes with an equimolar quantity of dppe; these crystals are cubic, a = 41.445(14) Å, b = 15.944(8) Å, c = 16.533(11) Å, p = 102.02(4)°, V = 10 685(9) Å3, Z = 4 + 4, space group C2/c, Solid state and solution phase results are discussed in terms of the coordination chemistry of indium(III). Key words: indium, phosphorus, coordination chemistry, multinuclear NMR, X-ray crystallography.

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Medina-Ramírez, Iliana, Cynthia Floyd, Joel Mague, and Mark Fink. "Silylated gallium and indium chalcogenide ring systems as potential precursors to ME (E=O, S) materials." Open Chemistry 11, no. 7 (2013): 1225–38. http://dx.doi.org/10.2478/s11532-013-0255-y.

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Abstract:

AbstractThe reaction of R3M (M=Ga, In) with HESiR′3 (E=O, S; R′3=Ph3, iPr3, Et3, tBuMe2) leads to the formation of (Me2GaOSiPh3)2(1); (Me2GaOSitBuMe2)2(2); (Me2GaOSiEt3)2(3); (Me2InOSiPh3)2(4); (Me2InOSitBuMe2)2(5); (Me2InOSiEt3)2(6); (Me2GaSSiPh3)2(7); (Et2GaSSiPh3)2(8); (Me2GaSSiiPr3)2(9); (Et2GaSSiiPr3)2(10); (Me2InSSiPh3)3(11); (Me2InSSiiPr3)n(12), in high yields at room temperature. The compounds have been characterized by multinuclear NMR and in most cases by X-ray crystallography. The molecular structures of (1), (4), (7) and (8) have been determined. Compounds (3), (6) and (10) are liquids at room temperature. In the solid state, (1), (4), (7) and (9) are dimers with central core of the dimer being composed of a M2E2 four-membered ring. VT-NMR studies of (7) show facile redistribution between four- and six-membered rings in solution. The thermal decomposition of (1)–(12) was examined by TGA and range from 200 to 350°C. Bulk pyrolysis of (1) and (2) led to the formation of Ga2O3; (4) and (5) In metal; (7)–(10) GaS and (11)–(12) InS powders, respectively.

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50

Saeri, Mohammad R., and Ahmad Keyvani. "Optimization of Manganese and Magnesium Contents in As-cast Aluminum-Zinc-Indium Alloy as Sacrificial Anode." Journal of Materials Science & Technology 27, no. 9 (2011): 785–92. http://dx.doi.org/10.1016/s1005-0302(11)60143-6.

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Journal articles on the topic 'INDIUM 11'

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