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Dissertations / Theses on the topic 'Indium chloride. Indium compounds'

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Published: 4 June 2021

Last updated: 14 February 2022

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1

Aston, Mark Edward. "Downstream etching of indium phosphide and indium with hydrogen atoms and methyl radicals." Thesis, University of British Columbia, 1990. http://hdl.handle.net/2429/28883.

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The etching of indium phosphide and indium by H atoms and methyl radicals has been studied in a discharge flow system at temperatures between 25 and 300°C. The results indicate that the hydrogen atoms react with InP to produce In metal globules and PH₃(g) at temperatures greater than 160°C. Methyl radicals were not found to react with InP. However these radicals were found to react with indium metal and the globules that are produced in the reaction of hydrogen atoms with InP. Reactions were conducted by alternately etching with H atoms and then with CH₃ radicals. Rate constants for these reac

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2

Trybus, Elaissa Lee. "Molecular beam epitaxy growth of indium nitride and indium gallium nitride materials for photovoltaic applications." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28108.

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Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Doolittle, W. Alan; Committee Member: Ferguson, Ian; Committee Member: Graham, Samuel; Committee Member: Rohatgi, Ajeet; Committee Member: Shen, Shyh-Chiang.

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3

Shah, Syed Hassan. "Study of nonlinear optical properties of indium arsenide/gallium arsenide and indium gallium arsenide/gallium arsenide self-assembled quantum dots." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 97 p, 2008. http://proquest.umi.com/pqdweb?did=1460350251&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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4

Fung, Man-kin, and 馮文健. "Fabrications of tin-doped indium oxide nanostructures and their applications." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2012. http://hub.hku.hk/bib/B47849459.

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Tin-doped indium oxide (ITO) has been widely used for various optoelectronic devices such as display panels, light-emitting diodes and solar cells due to its unique optical and electrical properties. Thin ITO films can be fabricated by a number of methods such as molecular beam epitaxy (MBE), laser ablation, dc sputtering, e-beam deposition, vapor phase deposition, electrochemical deposition and hydrothermal method. Apart from the conventional thin film form, one dimensional ITO nanorods or nanowires are attracting much research interest due to their high aspect ratio and large surface to vol

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5

Khalil, Ali Saied, and askhalil2004@yahoo com. "Heavy-Ion-Irradiation-Induced Disorder in Indium Phosphide and Selected Compounds." The Australian National University. Research School of Information Sciences and Engineering, 2007. http://thesis.anu.edu.au./public/adt-ANU20070716.140841.

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Indium phosphide (InP) is an important III-V compound, with a variety of applications, for example, in light emitting diodes (LED), InP based photonic crystals and in semiconductor lasers, heterojunction bipolar transistors in integrated circuit applications and in transistors for microwave and millimeter-wave systems. The optical and electrical properties of this compound can be further tailored by ion implantation or prospectively by swift heavy ion beams. ¶ Thus knowledge of ion-induced disorder in this material is of important fundamental and practical interest. However, the disorder prod

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6

Ritchie, Craig. "Indium- and tin-mediated allylation of carbonyl compounds in ionic liquids." Thesis, University of Strathclyde, 2004. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.415296.

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7

Takami, Kazuaki. "Studies on novel synthetic organic reactions with gallium and indium compounds." 京都大学 (Kyoto University), 2005. http://hdl.handle.net/2433/144886.

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Kyoto University (京都大学)<br>0048<br>新制・課程博士<br>博士(工学)<br>甲第11531号<br>工博第2477号<br>新制||工||1335(附属図書館)<br>23174<br>UT51-2005-D281<br>京都大学大学院工学研究科材料化学専攻<br>(主査)教授大嶌幸一郎, 教授檜山爲次郎, 教授吉田潤一<br>学位規則第4条第1項該当

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8

Tsai, Cheng-Hung. "Photoluminescence of gallium phosphide and indium gallium phosphide doped with rare-earths." Ohio : Ohio University, 2000. http://www.ohiolink.edu/etd/view.cgi?ohiou1173207968.

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9

Mowbray, Andrew Paul. "The surface chemistry of iodine and iodine compounds on indium antimonide(001)." Thesis, University of Nottingham, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.334804.

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10

Zhou, Jianming. "Indium tin oxide (ITO) deposition, patterning, and Schottky contact fabrication /." LInk to online version, 2006. https://ritdml.rit.edu/dspace/handle/1850/1717.

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11

Kerr, William. "Structural and optical studies of indium gallium arsenide/gallium arsenide quantum dot molecules for terahertz applications." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 80 p, 2006. http://proquest.umi.com/pqdweb?did=1203586781&sid=5&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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12

Osman, Sarah Omer Siddig. "Surface roughness of InP after N+2 bombardment : Ion areic dose dependence." Diss., University of Pretoria, 2004. http://hdl.handle.net/2263/24608.

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13

Swaminathan, Krishna. "Room-temperature aluminum gallium arsenic antimonide/indium gallium arsenic antimonide heterojunction phototransistors for the 2 micron region." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file, 83 p, 2009. http://proquest.umi.com/pqdweb?did=1654487611&sid=7&Fmt=2&clientId=8331&RQT=309&VName=PQD.

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14

Mane, Ankush T. "Synthesis and structural characterization of novel aluminium, gallium and indium compounds with silylamide ligands." kostenfrei, 2009. http://nbn-resolving.de/urn:nbn:de:gbv:3:4-618.

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15

Gilstrap, Richard Allen Jr. "A colloidal nanoparticle form of indium tin oxide: system development and characterization." Diss., Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/33995.

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A logical progression from the maturing field of colloidal semiconductor quantum dots to the emerging subclass of impurity-doped colloidal semiconductor nanoparticles is underway. To this end, the present work describes the formation and analysis of a new form of Tin-doped Indium Oxide (ITO). The form is that of a colloidal dispersion comprised of pure-phase, 4-6 nanometer ITO particles possessing an essentially single crystalline character. This system forms a non-agglomerated, optically clear solution in a variety of non-polar solvents and can remain in this state, at room temperature, f

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16

Wang, Rongxin. "Preparation and post-annealing effects on the optical properties of indium tin oxide thin films." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B31546171.

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17

Ma, Pui-wai, and 馬培煒. "Transport properties of InAs/(A1Sb)/GaSb/(A1Sb)/InAs heterostructure systems." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2004. http://hub.hku.hk/bib/B30474188.

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18

Lau, Tsz-wai Raymond, and 劉子偉. "Organic light emitting diodes: effects of anode treatments to device efficiency and stability." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2001. http://hub.hku.hk/bib/B31227545.

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19

Chaudhry, Wahid. "Vertical transport through n-InAs/p-GaSb heterojunctions at high pressures and magnetic fields." Thesis, University of Oxford, 1999. http://ora.ox.ac.uk/objects/uuid:355f36e2-cae2-4dad-8639-ed9f618c98ea.

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The conduction band of InAs lies lower in energy than the GaSb valence band. In order to preserve continuity of the Fermi level across the interface, charge transfer takes place resulting in a confined quasi two dimensional electron gas (2DEG) in the InAs and a confined quasi two dimensional hole gas (2DHG) in the GaSb. This study is an investigation into the vertical transport in an n-InAs/p-GaSb single heterojunction (SHET). Application of a forward bias (InAs negative with respect to GaSb) increases the 2DEG and 2DHG concentrations and, therefore, their confinement energies. Eventually a cr

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20

Lin, Yong. "Science and applications of III-V graded anion metamorphic buffers on INP substrates." Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1172852334.

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21

Wang, Rongxin, and 王榮新. "Preparation and post-annealing effects on the optical properties of indium tin oxide thin films." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B31546171.

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22

Capozzi, Charles J. "Controlled self-assembly of ito nanoparticles into aggregate wire structures in pmma-ito nanocomposites." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28277.

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Thesis (M. S.)--Materials Science and Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Gerhardt, Rosario; Engineering: Dr. Arun M. Gokhale; Engineering: Dr. Preet Singh; Engineering: Dr. Mohan Srinivasarao; Engineering: Dr. Meisha Shofner.

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23

Bennett, George Douglas. "Factors influencing asymmetric induction during indium-promoted allylation reactions of aldehydes and imino compounds in aqueous solution /." The Ohio State University, 1997. http://rave.ohiolink.edu/etdc/view?acc_num=osu1487945744573671.

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24

Dong, Sunny Ronald. "The investigation of indium halides and graphite intercalation compounds using time-differential perturbed angular correlation gamma-ray spectrosocopy." Thesis, University of British Columbia, 1988. http://hdl.handle.net/2429/28375.

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This thesis discusses in general terms the theory and application of time-differential perturbed angular correlation gamma-ray spectroscopy (TDPAC) to the study of solid state physics. The technique yields valuable information on the electric field gradients experienced by radionuclides which have been substituted for nonradioactive isotopes or inserted as impurities into various inorganic compounds. The indium halides are examined in a series of experiments. The first applications of this technique to the study of graphite intercalation compounds are discussed.<br>Science, Faculty of<br>Physi

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25

Neff, Joel Emerson. "Investigation of the effects of process parameters on performance of gravure printed ITO on flexible substrates." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/29625.

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Thesis (M. S.)--Mechanical Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Melkote, Shreyes; Committee Co-Chair: Danyluk, Steven; Committee Member: Graham, Samuel. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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26

Woods, Vincent Timothy. "High Pressure Chemical Vapor Deposition: A Novel Approach for the Growth of InN." unrestricted, 2006. http://etd.gsu.edu/theses/available/etd-05052006-121052/.

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Thesis (Ph. D.)--Georgia State University, 2006.<br>Title from title screen. Nikolaus Dietz, committee chair; Brian Thoms, Mark Stockman, Vadym Apalkov, Douglas Gies, committee members. Electronic text (167 p. : ill. (some col.)). Description based on contents viewed Apr. 24, 2007. Includes bibliographical references (p. 162-167).

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27

Tomita, Atsuko, Mitsuru Sano, Takashi Hibino, Yousuke Namekata, and Masahiro Nagao. "Intermediate-Temperature NOx Sensor Based on an In^3+ -Doped SnP2O7 Proton Conductor." The Electrochemical Society, 2006. http://hdl.handle.net/2237/18457.

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28

Panse, Pushkaraj. "Copper Gallium Diselenide Solar Cells: Processing, Characterization and Simulation Studies." [Tampa, Fla. : s.n.], 2003. http://purl.fcla.edu/fcla/etd/SFE0000080.

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29

Liu, Ying. "Heteroepitaxial growth of InN and InGaN alloys on GaN(0001) by molecular beam epitaxy." Click to view the E-thesis via HKUTO, 2005. http://sunzi.lib.hku.hk/hkuto/record/B36363558.

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30

Hardaway, Harvey Royston. "Spectroscopic studies of InAs/InAsSb heterostructure light-emitting diodes for the mid-infrared region." Thesis, Imperial College London, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.322199.

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31

Liu, Ying, and 劉穎. "Heteroepitaxial growth of InN and InGaN alloys on GaN(0001) by molecular beam epitaxy." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2005. http://hub.hku.hk/bib/B36363558.

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32

Mottern, Matthew L. "Microstructural development of porous materials for application in inorganic membranes." Columbus, Ohio : Ohio State University, 2007. http://rave.ohiolink.edu/etdc/view?acc%5Fnum=osu1189703433.

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33

Tomita, Atsuko, Mitsuru Sano, Takashi Hibino, Takeshi Yoshii, and Masahiro Nagao. "Electrochemical Reduction of NOx at Intermediate Temperatures Using a Proton-Conducting In^3+ -Doped SnP2O7 Electrolyte." The Electrochemical Society, 2006. http://hdl.handle.net/2237/18459.

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34

Vaughan, Thomas Alexander. "Magneto-optics of InAs/GaSb heterostructures." Thesis, University of Oxford, 1995. http://ora.ox.ac.uk/objects/uuid:52b3d4c8-04f2-4ee8-b5a5-382934807722.

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The optical properties of InAs/GaSb heterostructures under applied magnetic fields are studied in experimental and theoretical detail. The InAs/GaSb system is a type-II "crossed-gap" system, where the valence band edge of GaSb lies higher in energy than the conduction band edge of InAs. This leads to a region of energy above the InAs conduction band where conduction and hole states mix. Thin-layer superlattices remain semiconducting due to confinement effects, but thick-layer superlattices experience charge transfer which leads to intrinsic carrier densities approaching 10<sup>12</sup> cm<sup>

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35

Rickman, Sarah. "Growth and characterization of molybdenum disulfide, molybdenum diselenide, and molybdenum(sulfide, selenide) formed between molybdenum and copper indium(sulfide, selenide) during growth." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file 0.94 Mb., 85 p, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:1435848.

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36

AMARAL, ANTONIO A. "Aplicação da espectroscopia de correlação angular perturbada na investigação de interações hiperfinas em compostos de háfnio, indio e cádmio com os ligantes Fsup(1-), OHsup(1-) e EDTA." reponame:Repositório Institucional do IPEN, 2011. http://repositorio.ipen.br:8080/xmlui/handle/123456789/10006.

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Made available in DSpace on 2014-10-09T12:33:45Z (GMT). No. of bitstreams: 0<br>Made available in DSpace on 2014-10-09T14:04:00Z (GMT). No. of bitstreams: 0<br>Dissertação (Mestrado)<br>IPEN/D<br>Instituto de Pesquisas Energéticas e Nucleares - IPEN-CNEN/SP

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37

Boyea, John M. "Polystyrene composites filled with multi-wall carbon nanotubes and indium tin oxide nanopowders: properties, fabrication, characterization." Thesis, Georgia Institute of Technology, 2010. http://hdl.handle.net/1853/34813.

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This research was designed to fabricate and characterize novel polyhedral phase segregated microstructures of polystyrene (PS)-matrix composites filled with multi-walled carbon nanotubes (MWNT) and indium tin oxide (ITO) nanopowders. PS-composites were compression molded with MWNT and ITO separately first. The resulting composites were conducting, and remained optically transparent. Mixtures of MWNT and ITO were then used to form mixed ITO/MWNT PS-composites in order to optimize their transparency and conductivity. This was achieved by fabricating composites with varying concentrations of fill

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38

Liu, Fang, and 刘方. "Time-resolved photocurrent and photoluminescence spectra of GaInP/GaAs single-junction photovoltaic devices." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2015. http://hdl.handle.net/10722/209502.

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A pulse-laser based time-resolved photocurrent (TRPC) and photoluminescence (TRPL) system with a programmable Boxcar integrator/averager system incorporated was implemented to investigate the optical properties and charge carrier dynamics in a GaInP/GaAs single-junction photovoltaic device for the purposes of understanding fundamental optoelectronic processes in the solar cell. The implementation of whole system was realized by integrating the instrument of a Boxcar averager system with a pulse laser source + spectroscopic facilities. The delay time control and data acquisition were organize

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39

Wang, Ziyan, and 王子砚. "MBE growth of AlInN and Bi2Se3 thin films and hetero-structures." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 2011. http://hub.hku.hk/bib/B47163483.

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Molecular Beam Epitaxy is an advanced method for the synthesis of single-crystal thin-film structures. However, the growth behavior varies case by case due to the complicated kinetic process. In this thesis, the epitaxial growth processes of AlxIn1-xN alloy and Bi2Se3 thin-films are studied. Heteroepitaxial growth of AlxIn1-xN alloy on GaN(0001) substrate is carried out in the Nitrogen-rich flux conditions. A series of transient growth stages are identified from the initiation of the deposition. A significant effect of source beam-flux on the incorporation rate of Indium atoms is obser

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40

Tomita, Atsuko, Mitsuru Sano, Takashi Hibino, Pilwon Heo, Akihiko Takeuchi, and Masahiro Nagao. "A Proton-Conducting In^3+ -Doped SnP2O7 Electrolyte for Intermediate-Temperature Fuel Cells." The Electrochemical Society, 2006. http://hdl.handle.net/2237/18458.

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41

Ekins-Daukes, Nicholas John. "An investigation into the efficiency enhancement of strained and strain-balanced quantum well solar cells." Thesis, Imperial College London, 2000. http://hdl.handle.net/10044/1/8093.

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42

Sano, Mitsuru, Takashi Hibino, Masahiro Nagao, Hidetaka Shibata, and Pilwon Heo. "Performance of an Intermediate-Temperature Fuel Cell Using a Proton-Conducting Sn0.9In0.1P2O7 Electrolyte." The Electrochemical Society, 2006. http://hdl.handle.net/2237/18427.

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43

Cindemir, Umut. "Thin films for indoor air monitoring : Measurements of Volatile Organic Compounds." Doctoral thesis, Uppsala universitet, Fasta tillståndets fysik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:uu:diva-302558.

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Volatile organic compounds (VOCs) in the indoor air have adverse effects on the dwellers residing in a building or a vehicle. One of these effects is called sick building syndrome (SBS). SBS refers to situations in which the users of a building develop acute health effects and discomfort depending on the time they spend inside some buildings without having any specific illness. Furthermore, monitoring volatile organic compounds could lead to early diagnosis of specific illnesses through breath analysis. Among those VOCs formaldehyde, acetaldehyde can be listed. In this thesis, VOC detecting th

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44

Mane, Ankush T. [Verfasser], Kurt [Akademischer Betreuer] Merzweiler, Edwin [Akademischer Betreuer] Kroke, and Dirk [Akademischer Betreuer] Steinborn. "Synthesis and structural characterization of novel aluminium, gallium and indium compounds with silylamide ligands / Ankush T. Mane. Betreuer: Kurt Merzweiler ; Edwin Kroke ; Dirk Steinborn." Halle, Saale : Universitäts- und Landesbibliothek Sachsen-Anhalt, 2009. http://d-nb.info/1024874087/34.

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45

Jani, Omkar Kujadkumar. "Development of wide-band gap InGaN solar cells for high-efficiency photovoltaics." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/29627.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2008.<br>Committee Chair: Honsberg, Christiana; Committee Co-Chair: Ferguson, Ian; Committee Member: Citrin, David; Committee Member: Klein, Benjamin; Committee Member: Rohatgi, Ajeet; Committee Member: Snyder, Robert. Part of the SMARTech Electronic Thesis and Dissertation Collection.

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46

Dufåker, Daniel, L. O. Mereni, Fredrik K. Karlsson, et al. "Exciton-phonon coupling in single quantum dots with different barriers." Linköpings universitet, Halvledarmaterial, 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-67198.

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The coupling between longitudinal-optical (LO) phonons and neutral excitons in two different kinds of InGaAs pyramidal quantum dots embedded in either AlGaAs or GaAs barriers is experimentally examined. We find a slightly weaker exciton-LO-phonon coupling and increased linewidth of the phonon replicas for the quantum dots with GaAs barriers compared to the ones with AlGaAs barriers. These results, combined with the fact that the LO-phonon energy of the exciton is the same for both kinds of dots, are taken as evidence that the excitons mainly couple to LO-phonons within the QDs.<br>Original Pub

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47

Colakoglu, Tahir. "The Effects Of Post-annealing Process On The Physical Properties Of Silver-indium-selenium Ternary Semiconductor Thin Films Deposited By Electron Beam Technique." Phd thesis, METU, 2009. http://etd.lib.metu.edu.tr/upload/2/12610974/index.pdf.

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Ternary chalcopyrite compounds are the semiconductors with suitable properties to be used as absorber materials in thin film solar cells. AgInSe2 is a promising candidate with its several advantages over the widely used CuInSe2. The purpose of this study was to optimize the physical properties of the Ag-In-Se (AIS) thin films that were deposited by e-beam evaporation of Ag3In5Se9 single crystal powder for solar cell applications by means of post-annealing process under nitrogen atmosphere. The as-grown AIS thin films were annealed at 200, 300 and 400oC and their structural, optical, electrical

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48

Barry, Seán Thomas. "Compounds with mixed ligand systems as precursors for thermal synthesis of III-V extended solids, halo-pnictido, alkyl-pnictido, and siloxo-pnictido complexes of gallium and indium." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1996. http://www.collectionscanada.ca/obj/s4/f2/dsk3/ftp05/nq20991.pdf.

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49

Barry, Sean Thomas. "Compounds with mixed ligand systems as precursors for thermal synthesis of III-V extended solids: Halo-pnictido, alkyl-pnictido, and siloxo-pnictido complexes of gallium and indium." Thesis, University of Ottawa (Canada), 1996. http://hdl.handle.net/10393/9614.

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The compounds MN(SiMe$\rm\sb3)\sb2Cl\sb2\cdot$base (1: M = Ga, base = thf; 2: M = In, base = pyridine) were synthesised. Compound 1 disproportionated to gallium trichloride while 2 did not show any thermal reactivity. The compounds (Ga(R)$\sb2$N(SiMe$\sb3)\sb2\rbrack\sb2$ (3: R = $\rm\sp{n}$Bu, 4: R = $\rm\sp{t}$Bu) were synthesised. Complex 4 decomposed into several products at 400$\sp\circ$C, while 3 thermolysed to form hexagonal GaN at 400$\sp\circ$C, after annealing at 900$\sp\circ$C. Phosphido analogues of these, $\rm\lbrack Ga(\sp{n}Bu)(R)P(SiMe\sb3)\sb2\rbrack\sb2$ (5: R = $\rm\sp{n}$Bu

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50

Milton, Brian E. "Lateral surface superlattices in strained InGaAs layers." Thesis, University of Glasgow, 2000. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.340295.

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