Relevant bibliographies by topics / Indium sulfure

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Academic literature on the topic 'Indium sulfure'

Author: Grafiati
Published: 4 June 2021
Last updated: 6 February 2022

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Journal articles on the topic "Indium sulfure"

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Kumar, P. Anil, T. S. Sasi Jyothsna, T. N. R. Srinivas, Ch Sasikala, Ch V. Ramana, and J. F. Imhoff. "Marichromatium bheemlicum sp. nov., a non-diazotrophic, photosynthetic gammaproteobacterium from a marine aquaculture pond." International Journal of Systematic and Evolutionary Microbiology 57, no. 6 (June 1, 2007): 1261–65. http://dx.doi.org/10.1099/ijs.0.64753-0.

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A rod-shaped, phototrophic, purple sulfur bacterium, strain JA124T, was isolated in pure culture from a marine aquaculture pond, located near Bhimunipatnam, in a medium that contained 3 % NaCl (w/v). Strain JA124T is a Gram-negative, motile rod with a single polar flagellum. Strain JA124T has a requirement for NaCl, with optimum growth at 1.5–8.5 %, and tolerates up to 11 % NaCl. Intracellular photosynthetic membranes are of the vesicular type. Bacteriochlorophyll a and probably carotenoids of the spirilloxanthin series are present as photosynthetic pigments. Strain JA124T was able to utilize sulfide, sulfate, thiosulfate, sulfite, thioglycollate and cysteine as sulfur sources. Strain JA124T was able to grow photolithoautotrophically, photolithoheterotrophically and photo-organoheterotrophically. Chemotrophic and fermentative growth could not be demonstrated. Strain JA124T lacks diazotrophic growth and acetylene reduction activity. Pyridoxal phosphate is required for growth. During growth on reduced sulfur sources as electron donors, sulfur is deposited intermediately as a number of small granules within the cell. Phylogenetic analysis on the basis of 16S rRNA gene sequences showed that strain JA124T clusters with species of the genus Marichromatium belonging to the class Gammaproteobacteria. The highest sequence similarities of strain JA124T were found with the type strains of Marichromatium indicum (98 %), Marichromatium purpuratum (95 %) and Marichromatium gracile (93 %). However, DNA–DNA hybridization with Marichromatium indicum DSM 15907T revealed relatedness of only 65 % with strain JA124T. The DNA base composition of strain JA124T was 67 mol% G+C (by HPLC). Based on 16S rRNA gene sequence analysis, morphological and physiological characteristics and DNA–DNA hybridization studies, strain JA124T (=ATCC BAA-1316T=JCM 13911T) is sufficiently different from other Marichromatium species to merit its description as the type strain of a novel species, Marichromatium bheemlicum sp. nov.
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Gotoh, Tamihiro. "Effect of heat treatments on the electronic properties of indium sulfide films." European Physical Journal Applied Physics 89, no. 2 (February 2020): 20301. http://dx.doi.org/10.1051/epjap/2020190240.

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The optical and electrical properties of indium sulfide films with different heat treatments are investigated. Indium sulfide films are heat treated in Ar gas in a temperature range of 100–400 °C. Some annealed samples are heat treated at 300 °C with sulfur powder. The indium sulfide films show a band gap of 1.9–2.3 eV, an electrical resistivity in the range of 5.5 × 100–6.0 × 103 Ωm, and n-type electrical conduction. The resistivity decreases by three orders of magnitude by heat treatment at 300 °C in Ar gas and recovers almost to the initial state by heat treatment at 300 °C with sulfur powder. The Seebeck coefficient and subgap absorption at 1 eV show similar changes and recovery. The experimental results reveal the possible control of the density of states and of the Fermi level position by heat treatment and, hence, the feasibility of carrier control.
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Li, Yong Gang, Da Jin Yang, Jian Rong Peng, and Xiao Ying Li. "Enriching Indium Using Neutralization from Solution Bearing Indium." Advanced Materials Research 287-290 (July 2011): 2952–56. http://dx.doi.org/10.4028/www.scientific.net/amr.287-290.2952.

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An experimentation project has been put forward to enrich indium from sulfuric acid leaching solution bearing high content of indium: preneutralization using calcine---reduction using zinc sulfide concentrate---neutralization using limestone for precipitating indium, and ascertained optimal dosage of reagent in every procedure through experiment under certain condition: the dosage of calcine is 1.3 times of theoretic value, the dosage of zinc sulfide mineral concentrate is 2.2～2.3 times of theoretic value, the dosage of limestone is double of theoretic value. On this optimal condition, the straight recovery rate of indium is more than 97%, and the content of indium sediment from precipitating is more than 0.1%.
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Narayan, Om Prakash, Nidhi Verma, Abhimanyu Jogawat, Meenakshi Dua, and Atul Kumar Johri. "Sulfur transfer from the endophytic fungus Serendipita indica improves maize growth and requires the sulfate transporter SiSulT." Plant Cell 33, no. 4 (January 21, 2021): 1268–85. http://dx.doi.org/10.1093/plcell/koab006.

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Abstract A deficiency of the essential macronutrient sulfur leads to stunted plant growth and yield loss; however, an association with a symbiotic fungus can greatly improve nutrient uptake by the host plant. Here, we identified and functionally characterized a high-affinity sulfate transporter from the endophytic fungus Serendipita indica. SiSulT fulfills all the criteria expected of a functional sulfate transporter responding to sulfur limitation: SiSulT expression was induced when S. indica was grown under low-sulfate conditions, and heterologous expression of SiSulT complemented a yeast mutant lacking sulfate transport. We generated a knockdown strain of SiSulT by RNA interference to investigate the consequences of the partial loss of this transporter for the fungus and the host plant (maize, Zea mays) during colonization. Wild-type (WT) S. indica, but not the knockdown strain (kd-SiSulT), largely compensated for low-sulfate availability and supported plant growth. Colonization by WT S. indica also allowed maize roots to allocate precious resources away from sulfate assimilation under low-sulfur conditions, as evidenced by the reduction in expression of most sulfate assimilation genes. Our study illustrates the utility of the endophyte S. indica in sulfur nutrition research and offers potential avenues for agronomically sound amelioration of plant growth in low-sulfate environments.
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Choi, Hyung Seok, Youngsun Kim, Jae Chul Park, Mi Hwa Oh, Duk Young Jeon, and Yoon Sung Nam. "Highly luminescent, off-stoichiometric CuxInyS2/ZnS quantum dots for near-infrared fluorescence bio-imaging." RSC Advances 5, no. 54 (2015): 43449–55. http://dx.doi.org/10.1039/c5ra06912b.

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Li, Cun Xiong, Chang Wei, Hong Sheng Xu, Ji Qiang Liao, Zhi Gan Deng, and Gang Fan. "Leaching Behaviour of Metals from a Sphalerite Concentrate in Sulfuric Acid-Oxygen System." Advanced Materials Research 201-203 (February 2011): 1725–31. http://dx.doi.org/10.4028/www.scientific.net/amr.201-203.1725.

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Leaching behaviors of zinc, copper, indium and iron from a sphalerite concentrate in sulfuric acid-oxygen system has been investigated in the present paper. Various parameters were studied including particle size, concentration of sulfuric acid, partial pressure of oxygen, leaching temperature, and leaching time. The experimental data indicated that under the typical plant conditions employed up to 99% zinc , 85% copper and 90% indium extraction were achieved. The mineralogical analysis of the residue showed that the main minerals are elemental sulphur, unreacted pyrite and quartz, the amount of sulphide sulphur oxidized to sulfur during leaching is 81%. This process provides an effective way for the extraction of zinc, copper and indium from sphalerite concentrate.
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de Tacconi, Norma R., and Krishnan Rajeshwar. "Electrosynthesis of indium sulfide on sulfur-modified polycrystalline gold electrodes." Journal of Electroanalytical Chemistry 444, no. 1 (March 1998): 7–10. http://dx.doi.org/10.1016/s0022-0728(97)00533-0.

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Zimin, S. P., A. S. Pipkova, L. A. Mazaletskiy, I. I. Amirov, E. S. Gorlachev, S. V. Vasilev, V. V. Khoroshko, V. F. Gremenok, and A. N. Pyatlitski. "Formation of Metallic Droplets on the Surface of Indium Sulfide Films During Argon Plasma Treatment." International Journal of Nanoscience 18, no. 03n04 (June 2019): 1940066. http://dx.doi.org/10.1142/s0219581x19400660.

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Modification of indium sulfide (In2S3) film surface was performed by the treatment in high-density low-pressure inductively coupled argon plasma. The films with thickness of 500–800[Formula: see text]nm were fabricated on glass substrates by the thermal evaporation method and subsequent annealing in sulfur ambience. The plasma treatment of as-grown and annealed films was carried out with argon ions having the energy of 25–200[Formula: see text]eV. Nanostructuring of the film surface took place resulting in the formation of arrays of nanosized indium droplets.
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Deng, Zheng Bin, Xian Xie, Xiong Tong, Yong Cheng Zhou, Xiao Wang, and Xiang Wen Lv. "Flotation of Indium-Beard Marmatite in the Low Alkali Conditions." Applied Mechanics and Materials 316-317 (April 2013): 846–49. http://dx.doi.org/10.4028/www.scientific.net/amm.316-317.846.

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Flotation of indium-beard marmatite from Mengzi multi-metal sulfide ore in the low alkali conditions was studied. It shows that the mixed reagent X-41 (Main chemical components: Cu≧12%, S≧18%, O≧48%, H≧4.5%) as a new activator in the flotation at pH 9.5 produced a much better beneficiation than the copper sulfate at pH 13. The grade of zinc and indium was increased by 3.39% and 53.52g/t respectively, while the recovers were increased by 4.57% and 3.54%.
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Zorn, S. R., F. Drewnick, M. Schott, T. Hoffmann, and S. Borrmann. "Characterization of the South Atlantic marine boundary layer aerosol using an Aerodyne Aerosol Mass Spectrometer." Atmospheric Chemistry and Physics Discussions 8, no. 2 (March 5, 2008): 4831–76. http://dx.doi.org/10.5194/acpd-8-4831-2008.

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Abstract. Measurements of the submicron fraction of the atmospheric aerosol in the marine boundary layer were performed from January to March 2007 (Southern Hemisphere summer) onboard the French research vessel Marion Dufresne in the Southern Atlantic and Indian Ocean (20° S–60° S, 70° W–60° E). For chemical composition measurements an Aerodyne High-Resolution-Time-of-Flight AMS was used to measure mass concentrations and species-resolved size distributions of non-refractory aerosol components in the submicron range. Within the "standard" AMS compounds (ammonium, chloride, nitrate, sulfate, organics) "sulfate" is the dominating species in the marine boundary layer reaching concentrations between 50 ng m−3 and 3 μg m−3. Furthermore, what is seen as "sulfate" by the AMS seems to be mostly sulfuric acid. Another sulfur containing species that can ubiquitously be found in marine environments is methanesulfonic acid (MSA). Since MSA has not been directly measured before with an AMS, and is not part of the standard AMS analysis, laboratory experiments needed to be performed in order to be able to identify it within the AMS raw data and to extract mass concentrations for MSA from the field measurements. To identify characteristic air masses and their source regions backwards trajectories were used and averaged concentrations for AMS standard compounds were calculated for each air mass type. Sulfate mass size distributions were measured for these periods showing a distinct difference between oceanic air masses and those from African outflow. While the peak size in the mass distribution was roughly 250 nm in marine air masses it was shifted to 470 nm in African outflow air. Correlations between the mass concentrations of sulfate, organics and MSA were calculated which show a narrow correlation for MSA with sulfate/sulfuric acid coming from the ocean but not with continental sulfate.
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Dissertations / Theses on the topic "Indium sulfure"

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Beauvais, Jacques. "Gain optique dans le cadmium indium sulfide." Thesis, University of Ottawa (Canada), 1987. http://hdl.handle.net/10393/5316.

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So, David. "Copper indium sulfide colloidal quantum dot solar cells." Doctoral thesis, Universitat Politècnica de Catalunya, 2016. http://hdl.handle.net/10803/404049.

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The ubiquity of solar energy conversion technology is an exciting target which we aspire for in this century. Colloidal quantum dot (CQD) solar cells are an attractive platform, being low-cost and allowing facile control on film properties and device fabrication, but to date are dominated by PbS but contains the restricted element Pb. CuInS2 (CIS) is a non-toxic alternative, showing promise in the bulk and as sensitizer but has not been thoroughly investigated for solid-state CQD solar cells. In this work we aim to incorporate CIS nanocrystals (NCs) into the gamut of CQD solar cell materials by making optoelectronic CQD solids, by fabricating functional devices in various architectures and by identifying and overcoming the limiting material properties and device mechanisms. We described a synthethic scheme that resulted in CIS NCs that can be deposited as CQD solids with controllable thicknesses. CIS NCs are typically synthesized using long chain thiols which are difficult to remove from the NC surface. We introduced long chain amines and phosphines, decomposable chalcogenides and zinc oleate treatments to substitute the functions that the thiol performed. This led to cubic nanocrystals with controllable size, from 2 nm to 3.2 nm, and optical properties with bandgaps ranging from 2.5 eV to 1.5 eV. These particles are also copper poor, decorated with indium and zinc on the surface. With this, we were able to design a ligand exchange protocol using hard ligands for making solid-state CQD films which is a step forward to engineering optoelectronic devices. We fabricated optoelectronic devices using these films and identified thin film properties that could limit device performance. These assemblies of CIS NCs couple to each other as seen in changes in photoluminescence lifetimes with distance. When the distance between nanocrystals is reduced, these p-type films conduct although having low mobilities (~10-5 cm2V-1s-1), displaying features that signify high trap densities, such as high responsivity and long photoconductive decays. The ability to form solid-state films has allowed us to fabricate optoelectronic devices such as transistors, photodetectors and solar cells. In solar cells, CIS CQD solids have led to good open-circuit volages (VOCs), around 0.6 V, but low short-circuit currents (JSCs), ~1 mA/cm2, and fill factors (FFs), ~0.30. With the absorption coefficient of the CIS CQD solids, we found that the internal quantum efficiency (IQE) of these devices, is far below 10%. These highlight the importance of addressing the high trap density in the quantum dot solid. We addressed the low JSCs and FFs in CIS CQD solar cells by utilizing a bulk heterojunction (BHJ) architecture. This non-annealed architecture was fabricated by increasing the pore size of the TiO2 network which allowed for the uniform and deep infiltration of CIS NCs. By using a BHJ architecture, we improved the performance of CIS CQD solar cells: mainly from an increase in JSC and FF leading to a six-fold increase in efficiency from initially at 0.15% to 1.16%. From analysis of Suns-Voc, -Jsc and transient Voc and Jsc measurements, we have identified that BHJ devices have less trap-assisted recombination and a lower activation energy (EU) for hole extraction. This was confirmed by shifts in the full device photoluminescence. We suggested that the BHJ structure allows for quenching of deeper tail states near the valence band in CIS by the transfer of electrons from TiO2. In this work, we have started from synthetic molecular precursors, to engineering supramolecular structures in trying to introduce CIS NCs into CQD optoelectronics, showcasing various devices: field effect transistors, photodetectors, bilayer and BHJ solar cells. In each stage, we have highlighted material, film and device properties which will be necessary for good performance. Ultimately this work aims to stimulate new interest in further development of CIS CQD solar cells, opening the possibility for non-toxic CQD photovoltaics
Conseguir la ubicuidad de la tecnología de conversión de energía solar es un objetivo al que aspiramos en este siglo. Las células solares de puntos cuánticos coloidales (CQD) constituyen una plataforma interesante, debido a su bajo coste y a que permiten un control sencillo sobre las propiedades de la película y la fabricación de dispositivos, pero que están dominadas por PbS. El CuInS2 (CIS) es una alternativa no tóxica, prometedora en cuanto al grosor y como sensibilizadora, pero que no ha sido estudiada a fondo para su uso en células solares de CQD. El objetivo de este trabajo es incorporar nanocristales de CIS en toda la gama de materiales de células solares de CQD, mediante la creación de sólidos optoelectrónicos de CQD, fabricando dispositivos funcionales con diversas arquitecturas e identificando y superando las limitaciones de las propiedades de los materiales y los mecanismos de los dispositivos. Describimos una estrategia sintética que resultó en nanocristales de CIS que pueden ser depositados en forma de sólidos de CQD con espesores controlables. Los nanocristales de CIS son típicamente sintetizados utilizando tioles de cadena larga que son difíciles de eliminar de su superficie. Introdujimos aminas y fosfinas de cadena larga, un calcogenuro descomponible y tratamientos de oleato de zinc para substituir las funciones que realizaba el tiol. Esto generó nanocristales cúbicos de tamaño controlable, de 2 nm a 3.2 nm, con Eg de entre 2.5 eV y 1.5 eV. Estás partículas también son pobres en cobre, y su superficie está cubierta de indio y zinc. Mediante este proceso hemos podido diseñar un protocolo de intercambio de ligandos utilizando ácidos duros para generar películas de CQD en estado sólido, lo que constituye un avance para la ingeniería de dispositvos optoelectrónicos. Utilizando estas películas, fabricamos dispositivos optoelectrónicos e identificamos las propiedades de película fina que podrían limitar el rendimiento del dispositivo. Estos ensamblados de nanocristales de CIS se acoplan entre sí tal y como muestran los cambios en la duración de la fotoluminiscencia con la distancia. Cuando la distancia entre nanocristales se reduce, estas películas de tipo-p conducen, a pesar de tener bajas movilidades (~10-5 cm2V-1s-1) y de mostrar características que indican altas densidades de trampa, tales como una alta capacidad de respuesta y largos decaimientos fotoconductores. La capacidad para formar películas en estado sólido nos ha permitido fabricar dispositivos optoelectrónicos como transistores, fotodetectores y células solares. En las células solares, los sólidos de CQD de CIS han dado buenos Vocs, en torno a 0.6 V, pero bajas Jscs ~1 mA/cm2, y FFs ~0.30. Los coeficientes de absorción de los sólidos de CQDs de CIS indicaron que la eficiencia quántica interna (IQE) de estos dispositivos está muy por debajo del 10%. Esto destaca la importancia de solucionar la alta densidad de trampas en los sólidos de punto cuántico. Los bajos Jsc y FF en células solares de CQD de CIS fueron abordados utilizando una arquitectura de heterounión mayor (BHJ). Esta arquitectura no recocida se fabricó aumentando el tamaño de poro de la red de TiO2, lo que permitió una infiltración uniforme y profunda de los nanocristales de CIS. Utilizando la arquitectura BHJ hemos mejorado el rendimiento de las células solares de CQD de CIS, principalmente debido al aumento de las Jsc y los FFs, que conducen a incremento de seis veces en la eficiencia, del 0.15% inicial al 1.16%. A partir del análisis de las mediciones de Suns-Voc, -Jsc y Voc y Jsc transitorios, hemos identificado que los dispositivos de BHJ tienen una menor recombinación asistida por trampa y una menor energía de activación (EU) para la extracción de huecos. Esto fue confirmados por los cambios en la fotoluminiscencia del dispositivo total. Sugerimos que la estructura de BHJ permite el quenching de los tail states más profundos cerca de la nada de valencia en CIS por la transferencia de electrones de TiO2. En este trabajo, intentado introducir nanocristales de CIS en dispositivos optoelectrónicos, comenzando por precursores moleculares sintéticos hasta el diseño de estructuras supramoleculares. En cada etapa, hemos destacado el material y las propiedades de película y de dispositivos que serán necesarios para conseguir un buen rendimiento. Este trabajo tiene como objetivo final estimular un nuevo interés en futuros desarrollos de células solares de CQD de CIS, abriendo la posibilidad para fotovoltaicas no tóxicas de CQD.
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Pouget, Stéphanie. "Contribution à l'étude de l'influence de la dilution sur les propriétés magnétiques de composés isolants frustrés." Toulouse, INSA, 1993. http://www.theses.fr/1993ISAT0039.

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Nous avons principalement etudie le systeme ferromagnetique heisenberg-3d frustre cdcr#2#(#1##x#)in#2#xs#4, dans la limite des faibles dilutions x. La structure des phases ferromagnetiques et verre de spin reentrante a ete exploree par diffraction de neutrons et mesures d'aimantation macroscopiques. Les resultats s'interpretent dans le cadre d'un modele inhomogene du systeme de spins. Par diffusion de neutrons aux petits angles, spectrometries trois-axes et d'echo de spin, nous avons caracterise le comportement critique statique et dynamique des composes x=0 et 0. 05. Cette etude a revele la pertinence de la dilution et ainsi un des effets de la frustration qui est de porter le systeme dans la limite des forts desordres. Nos resultats suggerent l'existence de deux comportements statiques differents du compose cdcr#1#. #9in#0#. #1s#4, de part et d'autre de t#c, concernant la dynamique, nous avons mis en evidence une evolution non monotone du temps de relaxation en fonction du moment transfere, pour des valeurs de celui-ci tres inferieures a l'inverse de la longueur de correlation, et voisines de l'inverse de la distance moyenne entre impuretes in#3#+. La derniere partie de ce travail est consacree au systeme frustre ising-3d fe#1##xmg#xbr#2. Les mesures de la dispersion des ondes de spin pour differentes directions du moment transfere nous ont permis de preciser le modele des interactions d'echange pour le compose febr#2. Nous avons etudie la transition de phase para-antiferromagnetique pour les deux valeurs de la dilution x=0 et 0. 1. Les resultats sont interpretes dans le cadre d'une theorie classique de champ moyen
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Charbonneau, Sylvain. "Intensity dependent photoconductivity and photoluminescence in cadmium indium sulfide." Thesis, University of Ottawa (Canada), 1985. http://hdl.handle.net/10393/4725.

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Halverson, Adam Fraser 1978. "The role of sulfur alloying in defects and transitions in copper indium gallium diselenide disulfide thin films." Thesis, University of Oregon, 2007. http://hdl.handle.net/1794/6193.

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xv, 132 p. : ill. A print copy of this title is available from the UO Libraries, under the call number: SCIENCE TK7871.15.F5 H325 2007
The effects of sulfur alloying on the electronic properties of CuIn(SeS) 2 and CuInGa(SeS) 2 materials has been investigated using sophisticated junction capacitance techniques including drive-level capacitance profiling and transient photocapacitance and photocurrent spectroscopies. CISSe and CIGSSe materials are used as absorber layers in thin-film photovoltaic devices. By characterizing the electronic properties of these materials we hope to understand how these materials can be improved to make thin-film devices with better conversion efficiencies. Sulfur widens the bandgap of these materials by moving the valence band to lower energies and the conduction band to higher energies. This significantly affects the electronic structure of these devices by increasing the activation energies of dominant acceptor levels and lowering room temperature free hole carrier densities. Using optical spectroscopies we observe a large, broad defect that also changes its apparent energetic depth with sulfur alloying. The occupation of this defect was controlled both optically and thermally, and showed a striking temperature dependence. This temperature dependence was measured by recording the relative defect signal, the ratio of the TPC signal in the defect regime to the above bandgap regime, as a function of temperature. As the temperature of the measurement was decreased, steps in the relative defect signal were observed, indicating the turning off of the thermal pathway that emptied trapped charge from the defect. Remarkably, such steps were seen at the same temperature in CISSe and CIGSSe devices with similar sulfur content. In addition, no steps were seen in CMS devices. This points to a defect state specific to the incorporation of sulfur in the absorber material. We hope that a better understanding of the electronic structure of these materials will assist in the creation of improved wide-bandgap thin-film photovoltaic devices.
Adviser: J. David Cohen
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Weïwer, Michel. "Acides de Lewis comme catalyseurs dans des réactions de macrocyclisation et de fonctionnalisation d'oléfines : applications en chimie des arômes et parfums." Nice, 2005. http://www.theses.fr/2005NICE4094.

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Les composés macrocycliques de la famille des substances à odeur musquée sont des composés clés utilisés dans de nombreux parfums, produits cosmétiques et d’entretien. Dans ce contexte, une partie de ce travail de thèse concerne l’étude de réactions de macrocyclisation pour la formation de lactones macrocycliques ainsi que la synthèse de nouveaux muscs aliphatiques. Le couplage réductif intramoléculaire de 1, □-dialdéhydes et de thiuesters a été étudié par voie électrochimique. D’autre part, la cycloisomérisation d’acides carboxyliques □-insaturés catalysée par des superacides protiques et de Lewis a été examinée. La synthèse d’une série d’esters aliphatiques a également été réalisée dans le but d’examiner les relations structure-odeur régissant l’odeur musquée. La deuxième partie de ce travail de thèse concerne l’addition de composés soufrés sur des oléfines non activées catalysée par des acides de Lewis dérivés de l’indium (III). La méthode développée a permis l’accès à de nombreux thioacétates, sulfures et thiols, composés importants en chimie des dérivés de l’indium (III). La méthode développée a permis l’accès à de nombreux thioacétates, sulfures et thiols, composés importants en chimie des arômes. Le système catalytique mis au point a été appliqué à la thioacétylation de dérivés terpéniques, pour la formation du 1-p-menthèn-8-thiol et de nouvelles structures dérivées du camphène. L’addition de thiols sur des dérivés de glycals a également été examinée et nous a conduit à l’obtention de thioglycosides 2,3-insaturés par réarrangement de Ferrier. Enfin, une étude mécanistique faisant appel à des analyses par RMN 1H, 13C et 115In ainsi qu’à des analyse en pH-métrie a permis de proposer une complexation entre le dérivé de l’indium (III) et le composé soufré, selon le concept LBA.
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Ghzizal, Abdelaziz el. "Contribution à l'optimisation des photopiles p-CuInSe2/n-CdS fabriquées par pulvérisation chimique réactive." Montpellier 2, 1989. http://www.theses.fr/1989MON20133.

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Ce travail est consacre pour une partie a l'etude approfondie des couches constituant la photopile p-culnse#2/n-cds. L'autre partie de ce travail est consacre a l'optimisation des parametres photovoltaiques de la photopile p-culnse#2/n-cds. Actuellement, le meilleur rendement de conversion est de 4% sur 1 cm#2 et de 5% sur 0,19 cm#2
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Halverson, Adam Fraser. "The role of sulfur alloying in defects and transitions in copper indium gallium diselenide disulfide thin films /." Connect to title online (Scholars' Bank) Connect to title online (ProQuest), 2007. http://hdl.handle.net/1794/6193.

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Thesis (Ph. D.)--University of Oregon, 2007.
Typescript. Includes vita and abstract. Includes bibliographical references (leaves 127-132). Also available online in Scholars' Bank; and in ProQuest, free to University of Oregon users.
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Rickman, Sarah. "Growth and characterization of molybdenum disulfide, molybdenum diselenide, and molybdenum(sulfide, selenide) formed between molybdenum and copper indium(sulfide, selenide) during growth." Access to citation, abstract and download form provided by ProQuest Information and Learning Company; downloadable PDF file 0.94 Mb., 85 p, 2006. http://gateway.proquest.com/openurl?url_ver=Z39.88-2004&res_dat=xri:pqdiss&rft_val_fmt=info:ofi/fmt:kev:mtx:dissertation&rft_dat=xri:pqdiss:1435848.

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Saifi, Ali. "Contribution à l'étude des propriétés magnétiques des systèmes spinelles isolants CdCr2xIn2-2xS4 et ZnCr2xGa2-2xO4 : phases type verre de spin." Paris 6, 1986. http://www.theses.fr/1986PA066519.

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Ces systèmes présentent la percolation et la frustration. Le premier composé est ferromagnétique, tandis que le second présente des interactions antiferromagnétiques. On étudie en fonction de x les transitions de ces composés. Les transitions de phase du gallate ont été étudiées par effet Mössbauer. On a mis en évidence que pour x0,75 l'ordre magnétique tend vers un ordre caractéristique de la "vraie" phase verre de spin.
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Books on the topic "Indium sulfure"

1

Menon-Choudhary, Deepa. Assessing policy choices for managing SO2 emissions from Indian power sector. New Delhi: Centre De Sciences Humaines, 2005.

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Institute, Sulphur, ed. Sulphur: Its role and place in balanced fertiliser use for Indian agriculture : a comprehensive review of plant nutrient sulphur in India--agronomics, economics, and fertilizer requirements. Washington, DC (1140 Connecticut Ave., N.W., Suite 612, Washington 20036): The Institute, 1994.

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Cobalt in hard metals and cobalt sulfate, gallium arsenide, indium phosphide, and vanadium pentoxide. Lyon, France: International Agency for Research on Cancer, 2006.

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(Contributor), WHO, ed. Cobalt in Hard-metals and Cobalt Sulfate, Gallium Arsenide, Indium Phosphide and Vanadium Pentoxide (IARC Monographs). World Health Organisation, 2006.

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Book chapters on the topic "Indium sulfure"

1

Deng, Zhi-gan, Guang Fan, Chang Wei, Gang Fan, Min-ting Li, Xing-bin Li, and Cun-xiong Li. "Reductive Leaching of Indium-Bearing Zinc Leaching Residue in Sulfuric Acid and Sulfur Dioxide." In Rare Metal Technology 2020, 369–78. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-36758-9_36.

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Nongbri, Pyniarlang L., and Ralf Oelmüller. "Role of Piriformospora indica in Sulfur Metabolism in Arabidopsis thaliana." In Soil Biology, 295–307. Berlin, Heidelberg: Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-33802-1_18.

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Cao, Hongyang, Jimin Wang, Binxiu Wu, Jian Wang, and Junhong Li. "Indium Extraction Process from Sulfuric Pressure Leaching Solution for Vacuum Furnace Germanium Slag." In Characterization of Minerals, Metals, and Materials 2013, 547–52. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118659045.ch63.

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Liu, Yan, Yang-yang Fan, Jun-fu Qi, Lei Tian, and Ting-an Zhang. "Research on Sulfur Conversion Behavior in Oxygen Pressure Acid Leaching Process of High Indium Sphalerite." In The Minerals, Metals & Materials Series, 199–208. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-72131-6_18.

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Satra, Jit, and Bibhutosh Adhikary. "Enhancement of Visible Light Driven Photovoltaic Efficiency Upon Copper Incorporation to Silver Indium Sulfide Nanocrystals." In Advances in Energy Research, Vol. 1, 81–88. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-2666-4_9.

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Ganeshpurkar, Aditya, Ankit Ganeshpurkar, Abhishek Agnihotri, Vikas Pandey, Nikhar Vishwakarma, Divya Bansal, and Nazneen Dubey. "Chondroitin Sulfate Surface Engineered Docetaxel-Loaded Liposomes for Tumor Targeting: Design, Development, and Characterization." In Proceedings of All India Seminar on Biomedical Engineering 2012 (AISOBE 2012), 77–82. India: Springer India, 2012. http://dx.doi.org/10.1007/978-81-322-0970-6_9.

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Saravanan, Ramachandran, Ramachandran Karthik, and Annian Shanmugam. "Partial sequencing, structural characterization, and anticoagulant activity of heparan sulfate and sulfated chitosan from selected Indian marine mollusks." In Marine Glycobiology, 129–43. Taylor & Francis Group, 6000 Broken Sound Parkway NW, Suite 300, Boca Raton, FL 33487-2742: CRC Press, 2016. http://dx.doi.org/10.1201/9781315371399-10.

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Comasseto, J. V., and A. S. Guarezemini. "Indium Alkanethiolates." In Sulfur, Selenium, and Tellurium, 1. Georg Thieme Verlag KG, 2008. http://dx.doi.org/10.1055/sos-sd-039-00495.

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Comasseto, J. V., and A. S. Guarezemini. "Indium Alkaneselenolates." In Sulfur, Selenium, and Tellurium, 1. Georg Thieme Verlag KG, 2008. http://dx.doi.org/10.1055/sos-sd-039-01238.

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Comasseto, J. V., and A. S. Guarezemini. "Indium Alkanetellurolates." In Sulfur, Selenium, and Tellurium, 1. Georg Thieme Verlag KG, 2008. http://dx.doi.org/10.1055/sos-sd-039-01529.

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Conference papers on the topic "Indium sulfure"

1

Newell, M. Jason, Robert Engelken, J. Hall, M. A. Mughal, F. Felizco, J. Vangilder, S. Thapa, D. McNew, and Z. Hill. "Elemental sulfur-based electrodeposition of indium sulfide films." In 2011 37th IEEE Photovoltaic Specialists Conference (PVSC). IEEE, 2011. http://dx.doi.org/10.1109/pvsc.2011.6186202.

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Elfarrass, Samira, Bouchaib Hartiti, Abderraouf Ridah, and Philippe Thevenin. "Influence of silver doped indium sulfide on the structural and optical properties of spray pyrolyzed indium sulfide thin films." In 2016 International Renewable and Sustainable Energy Conference (IRSEC). IEEE, 2016. http://dx.doi.org/10.1109/irsec.2016.7983882.

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Магомадов, Р. М., and Р. Р. Юшаев. "INFLUENCE OF THE SEMICONDUCTOR CONDUCTIVITY ON THE VALUE OF THE SCHOTTKY BARRIER." In «АКТУАЛЬНЫЕ ВОПРОСЫ СОВРЕМЕННОЙ НАУКИ: ТЕОРИЯ, ТЕХНОЛОГИЯ, МЕТОДОЛОГИЯ И ПРАКТИКА». Международная научно-практическая онлайн-конференция, приуроченная к 60-ти летию член-корреспондента Академии наук ЧР, доктора технических наук, профессора Сайд-Альви Юсуповича Муртазаева. Crossref, 2021. http://dx.doi.org/10.34708/gstou.conf..2021.20.82.001.

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В данной работе исследовано влияние проводимости полупроводника на Барьер Шотки в контакте металл полупроводник. В качестве объектов исследования выбраны контакты с алюминием следующих полупроводников: арсенида индия(InAs), арсенида галлия (GaAs)антимонида индия(InSb) и сульфида кадмия(CdS). Выбор этих кристаллов связан с тем, что ширина запрещенной зоны этих полупроводников возрастает от Еg = 0,18 эВ у арсенида индия до Еg = 2,53 эВ у сульфида кадмия, что соответствует поставленной задаче в данной работе. In this paper, the influence of the conductivity of a semiconductor on the Schottky Barrier in the metal-semiconductor contact is investigated. Contacts with aluminum of the following semiconductors were selected as objects of research: indium arsenide(InAs), gallium arsenide (GaAs), indium antimonide(InSb), and cadmium sulfide(CDs). The choice of these crystals is due to the fact that the band gap of these semiconductors increases from U = 0.18 eV for indium arsenide to U =eV for cadmium sulfide, which corresponds to the task in this paper.
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Basu, Arun, Mike Gradassi, Ron Sills, Theo Fleisch, and Raj Puri. "Use of DME as a Gas Turbine Fuel." In ASME Turbo Expo 2001: Power for Land, Sea, and Air. American Society of Mechanical Engineers, 2001. http://dx.doi.org/10.1115/2001-gt-0003.

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A new, ultra-clean fuel for gas turbines — a blend consisting primarily of dimethyl ether (DME) with lesser amounts of methanol and water — has been identified by BP. This fuel, containing no metals, sulfur or aromatics, burns like natural gas and it can be handled like LPG. The turbine-grade DME fuel can be manufactured from natural gas, coal and other hydrocarbon or biomass feedstocks. High-purity DME, manufactured from methanol, is currently used as an aerosol propellant due to its environmentally benign characteristics. Fuel-grade DME is used commercially as a LPG-substitute in China. BP initiated key programs to test various fuel mixtures containing DME in General Electric test combustors with equivalent electricity production of nearly 16 MW. Later, BP collaborated with EPDC (Electric Power Development Corporation, Japan) to conduct additional follow-up tests. These tests show that DME is an excellent gas turbine fuel with emissions properties comparable to natural gas. BP is currently working with the Indian Oil Corporation (IOCL), the Gas Authority of India Limited (GAIL) and the Indian Institute of Petroleum to evaluate the potential of DME as a multi-purpose fuel for India. In June 2000, the India Ministry of Power issued a notification permitting the use of DME as a fuel for power generation subject to its meeting all the environmental and pollution regulations. This paper presents key gas turbine combustor test results and discusses how DME can be used as a fuel in gas turbines.
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Mughal, Maqsood Ali, M. J. Newell, Joshua Vangilder, Shyam Thapa, Kayla Wood, Robert Engelken, B. R. Carroll, and J. Bruce Johnson. "Morphological and compositional analysis of electrodeposited indium (III) sulfide (In2S3) films." In 2014 IEEE 40th Photovoltaic Specialists Conference (PVSC). IEEE, 2014. http://dx.doi.org/10.1109/pvsc.2014.6925234.

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Tadjarodi, Azadeh, and Amir Hossein Cheshmekhavar. "Preparation of Silver Indium Sulfide Nanorods by a Facile Microwave Approach." In The 16th International Electronic Conference on Synthetic Organic Chemistry. Basel, Switzerland: MDPI, 2012. http://dx.doi.org/10.3390/ecsoc-16-01127.

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Yang, Chih Sheng, Chen Da Tsai, Lu Wei Huang, Cheng Yung Kuo, and Chie Gau. "Hybrid organic solar cells based on nanoparticles of copper indium sulfur and conjugated polymer." In 2010 International Symposium on Computer, Communication, Control and Automation (3CA). IEEE, 2010. http://dx.doi.org/10.1109/3ca.2010.5533742.

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Bansode, Sanjay B., Ramesh S. Kapadnis, V. G. Wagh, Sampat S. Kale, and Habib M. Pathan. "Transport properties of indium sulfide thin films deposited by chemical bath deposition." In PROCEEDING OF INTERNATIONAL CONFERENCE ON RECENT TRENDS IN APPLIED PHYSICS AND MATERIAL SCIENCE: RAM 2013. AIP, 2013. http://dx.doi.org/10.1063/1.4810297.

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Vittoe, Robert L., Tung Ho, Sudhir Shrestha, Mangilal Agarwal, and Kody Varahramyan. "All Solution-Based Fabrication of CIGS Solar Cell." In ASME 2013 International Manufacturing Science and Engineering Conference collocated with the 41st North American Manufacturing Research Conference. American Society of Mechanical Engineers, 2013. http://dx.doi.org/10.1115/msec2013-1239.

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This paper presents fabrication of copper indium gallium di-selenide (CIGS) solar cells using all solution-based deposition processes. CIGS nanoparticles were synthesized through multi-step chemical process using copper chloride, indium chloride, gallium chloride, and selenium in oleyamine. CIGS thin films were constructed through layer-by-layer (LbL) self-assembly and spray-coating techniques. Chemical-bath-deposition and spray-coating methods were used for cadmium sulfide and zinc oxide film depositions, respectively. Initial thin film solar cell devices exhibited promising 0.3 mA short circuit current and 200 mV open circuit voltage. The solar cells fabricated through the all solution-based processes are cost-effective, thus, have potentials of providing a viable, renewable and sustainable energy source. The proposed processes can further be realized on flexible substrates, which may broaden the applications range for the solar cells.
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Sankir, Nurdan Demirci, Erkan Aydin, and Esma Ugur. "Spray pyrolized copper indium gallium sulfide abosrober layers for thin film solar cells." In 2013 International Conference on Renewable Energy Research and Applications (ICRERA). IEEE, 2013. http://dx.doi.org/10.1109/icrera.2013.6749818.

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