Relevant bibliographies by topics / Infrared Photodetection / Dissertations / Theses
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Dissertations / Theses on the topic 'Infrared Photodetection'

Author: Grafiati
Published: 6 September 2023
Last updated: 25 May 2024

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1

Fowler, Clayton M. "Application of Metamaterials to RF Energy Harvesting and Infrared Photodetection." Scholar Commons, 2017. http://scholarcommons.usf.edu/etd/7024.

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Techniques for adapting metamaterials for the improvement of RF energy harvesting and infrared photodetection are demonstrated using experimental and computer simulation methods. Two methods for RF energy harvesting are experimentally demonstrated and supported by computer simulation. In the first method, a metamaterial perfect absorber (MPA) is made into a rectenna capable of harvesting RF energy and delivering power to a load by soldering Schottky diodes onto connected split ring resonator (SRR) structures composing the planar metasurface of the perfect absorber. The meta
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2

Osedach, Timothy. "Colloidal Quantum Dots and J-Aggregating Cyanine Dyes for Infrared Photodetection." Thesis, Harvard University, 2012. http://dissertations.umi.com/gsas.harvard:10088.

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The emergence of nanostructured semiconducting materials enables new approaches toward the realization of photodetectors that operate in the technologically important near- and short-wave infrared (NIR and SWIR) spectral ranges. In particular, organic semiconductors and colloidal quantum dots (QDs) possess numerous advantages over conventional crystalline semiconductors including highly tunable optical and electronic characteristics, the prospect for low-temperature processing, and compatibility with inexpensive and exible substrates. Photodetectors based on such materials may lead to low-cost
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3

Alvarenga, Deborah Reis. "A study on the physical properties of quantum dot structures for infrared photodetection." Universidade Federal de Minas Gerais, 2011. http://hdl.handle.net/1843/JCBV-8PBLYM.

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This thesis is part of a project where the overall goal is to master the technology of infrared photodetectors based on self-organized semiconductor quantum dots, the Quantum Dot Infrared Photodetectors (QDIPs) for the wavelength range from 2 to 20 ìm. The thesis focuses on the physical properties of quantum dots and QDIPs structures, especially on the intraband transitions and extraction mechanisms involved in the photocurrent generation. We studied original and innovative structures based on self-organized InAs quantum dots grown on InP substrates. The main results presented in this thesis a
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4

Martinez, Bertille. "Étude des propriétés optoélectroniques de nanocristaux colloïdaux à faible bande interdite : application à la détection infrarouge." Electronic Thesis or Diss., Sorbonne université, 2019. http://www.theses.fr/2019SORUS254.

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Les nanocristaux colloïdaux de semiconducteurs sont des nanomatériaux synthétisés en solution. En deçà d’une certaine taille, ils deviennent confinés : leurs propriétés optiques et électroniques sont alors dépendantes de leur taille. Le développement de ces nanocristaux a atteint une grande maturité dans le visible. L’enjeu est maintenant d’étendre la gamme accessible et d’obtenir des nanocristaux ayant des propriétés dans l’infrarouge. Parmi les candidats, on trouve les nanocristaux de tellure de mercure, HgTe, et de séléniure de mercure, HgSe. L’objectif de ce doctorat est d’approfondir la c
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5

Yeo, Hwee Tiong. "High responsivity tunable step quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Dec%5FYeo.pdf.

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6

Lantz, Kevin R. "Two color photodetector using an asymmetric quantum well structure." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FLantz.pdf.

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7

Konukbay, Atakan. "Design of a voltage tunable broadband quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2002. http://library.nps.navy.mil/uhtbin/hyperion-image/02Jun%5FKonukbay.pdf.

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8

Jiang, Lin. "Investigation of a novel multicolor quantum well infrared photodetector and advanced quantum dot infrared photodetectors." [Gainesville, Fla.] : University of Florida, 2003. http://purl.fcla.edu/fcla/etd/UFE0001249.

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9

Hanson, Nathan A. "Characterization and analysis of a multicolor quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2006. http://library.nps.navy.mil/uhtbin/hyperion/06Jun%5FHanson.pdf.

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Thesis (M.S. in Applied Physics)--Naval Postgraduate School, June 2006.<br>Thesis Advisor(s): Gamani Karunasiri, James H. Luscombe. "June 2006." Includes bibliographical references (p. 49-50). Also available in print.
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10

Alves, Fabio Durante Pereira. "Design and analysis of a multicolor quantum well infrared photodetector." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2005. http://library.nps.navy.mil/uhtbin/hyperion/05Sep%5FAlves.pdf.

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Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, September 2005.<br>Thesis Advisor(s): Gamani Karunasiri, John Powers, Sherif Michael. Includes bibliographical references (p. 93-97). Also available online.
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11

Sim, Koon-hung Steven, and 沈觀洪. "Antimonide based quantum-well and its application in infrared photodetector." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1999. http://hub.hku.hk/bib/B31223345.

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12

Bigioli, Azzurra. "Performance evaluation of a quantum-well infrared photodetector in patch-antenna architecture." Master's thesis, Alma Mater Studiorum - Università di Bologna, 2017. http://amslaurea.unibo.it/13438/.

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Nel presente lavoro di tesi si dimostra il miglioramento delle perfomances di un detector basato su pozzi quantici (QWIP-Quantum Well Infrared Photo detector)(n-type GaAs/AlGaAs) nel range infrarosso (λ ≈8.6µm), processato in un array di nano-antenne a doppio metallo. I Quantum Well detectors generano fotocorrente attivando transizioni intersottobanda nel supereticolo di pozzi quantici. Le prestazioni di questi detectors sono deteriorate dal rumore associato alla corrente di dark, proporzionale all’area del detector e dipendente esponenzialemente dalla temperatura. In questo lavoro, si dimostr
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13

Arslan, Yetkin. "Large Format Dual-band Quantum Well Infrared Photodetector Focal Plane Arrays." Master's thesis, METU, 2009. http://etd.lib.metu.edu.tr/upload/3/12610936/index.pdf.

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Quantum Well Infrared Photodetectors (QWIPs) are strong competitors to other detector technologies for future third generation thermal imagers. QWIPs have inherent advantages of mature III-V material system and well settled fabrication technology, as well as narrow band photo-response which is an important property facilitating the development of dual-band imagers with low crosstalk. This thesis focuses on the development of long/mid wavelength dual band QWIP focal plane arrays (FPAs) based on the AlGaAs/GaAs material system. Apart from traditional single band QWIPs, the dual-band operation is
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14

Alves, Fábio Durante Pereira. "Three-band quantum well infrared photodetector using interband and intersubband transitions." Instituto Tecnológico de Aeronáutica, 2008. http://www.bd.bibl.ita.br/tde_busca/arquivo.php?codArquivo=523.

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This thesis presents the modeling, design, fabrication and characterization of a quantum well infrared photodetector (QWIP) capable of detecting near infrared (NIR), mid wavelength infrared (MWIR) and long wavelength infrared (LWIR), simultaneously. The NIR detection was achieved using interband transition while MWIR and LWIR were based on intersubband transition in the conduction band. The quantum-well structure was modeled by solving self-consistently the Schrödinger and Poisson equations with the help of the shooting method. A sample with three different stacks of quantum wells formed by di
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15

Durlin, Quentin. "Nouvelles structures photodétectrices à base d'antimoniures pour la détection du moyen infrarouge." Thesis, Montpellier, 2017. http://www.theses.fr/2017MONTS042.

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Le monde des détecteurs infrarouge a été révolutionné, depuis le milieu des années 2000, par l'apparition de nouvelles structures photodétectrices dont les performances surclassent celles des photodiodes. Ces photodétecteurs ont permis le développement d'une nouvelle génération de caméras plus compactes, plus fiables et moins gourmandes en énergie. Cette thèse avait pour objectif l'étude de ces nouvelles structures photodétectrices haute performance à base d'antimoniures pour la détection du moyen infrarouge entre 3-5µm.Les performances d'un photodétecteur dépendent directement de la qualité d
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16

Qu, Junling. "Colloidal semiconductor nanocrystals for optoelectronic applications : photodetectors and light emitting diodes." Electronic Thesis or Diss., Sorbonne université, 2021. http://www.theses.fr/2021SORUS021.

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Les nanocristaux dont la dimension est inférieure à leur rayon de Bohr excitonique peuvent fournir des propriétés optoélectroniques accordables avec la taille. Cela permet d’obtenir des propriétés électroniques à façon. En particulier, le développement de la synthèse par voie colloïdale des nanocristaux en fait des briques élémentaires prometteuses pour des applications optoélectroniques à bas coût. Ma thèse cible deux aspects des dispositifs à base de nanocristaux: les photodétecteurs infrarouges et les diodes électroluminescentes (LED). Ma thèse est d'abord centrée sur la photodétection infr
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17

Ersagun, Ozlem. "Dark Current Mechanisms And Passivation Of Inassb Infrared Photodiodes On Alternative Substrates." Master's thesis, METU, 2005. http://etd.lib.metu.edu.tr/upload/2/12606875/index.pdf.

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This thesis reports a detailed characterization of indium arsenide antimonide (InAs1- xSbx) photodetectors grown on gallium arsenide (GaAs) substrate by molecular beam epitaxy. A combination of polyimide and sulphur and a single layer of polyimide were used as passivation films in this study. Two different epilayer structures were used for assessing the detector performance and comparing the above passivation layers. For the first structure, the optical measurements revealed that Sb mole fraction was 0.13 and the cut-off wavelength was around 4.1 &micro<br>m at 80 K. The Sb mole fraction of th
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18

Elfving, Anders. "Near-infrared photodetectors based on Si/SiGe nanostructures." Doctoral thesis, Linköping : Surface and Semiconductor Physics, Linköping University, 2006. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-5909.

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19

Sevison, Gary Alan. "Silicon Compatible Short-Wave Infrared Photonic Devices." University of Dayton / OhioLINK, 2018. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1523553057993197.

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Chu, Audrey. "Couplage lumière-matière au sein de détecteurs infrarouges à base de nanocristaux colloïdaux." Electronic Thesis or Diss., Sorbonne université, 2021. http://www.theses.fr/2021SORUS082.

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Les nanocristaux colloïdaux sont des nanoparticules dont la croissance se fait en solution. Lorsque la taille de ceux-ci est suffisamment faible, des effets de confinement quantique apparaissent et leurs propriétés optiques deviennent ajustables avec leur taille. Ces nanocristaux sont en particulier utilisés pour leur luminescence dans le visible mais peuvent aussi être utilisés pour réaliser de la photodétection dans la gamme infrarouge. Les nanocristaux de HgTe et PbS présentent des propriétés d’absorption dans l’infrarouge. Le mécanisme de transport au sein d’un film de nanocristaux induit
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21

Kocer, Hasan. "Numerical Modeling And Optimization Of Hgcdte Infrared Photodetectors For Thermal Imaging." Phd thesis, METU, 2011. http://etd.lib.metu.edu.tr/upload/12613126/index.pdf.

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This thesis presents a detailed investigation of the performance limiting factors of long wavelength infrared (LWIR) and very long wavelength infrared (VLWIR) p on n HgCdTe detectors through numerical simulations at 77 K incorporating all considerable generation-recombination mechanisms including trap assisted tunneling (TAT), Shockley-Read-Hall (SRH), Auger and radiative processes. Numerical simulations under dark and illuminated conditions were performed with different absorber layer thicknesses, material compositions (cut-off wavelengths), trap density, and trap energy level. The results id
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22

Eker, Suleyman Umut. "Single And Dual Band Quantum Well Infrared Photodetector Focal Plane Arrays On Inp Substrates." Phd thesis, METU, 2010. http://etd.lib.metu.edu.tr/upload/3/12611601/index.pdf.

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Excellent uniformity and mature material properties of Quantum Well Infrared Photodetectors (QWIPs) have allowed the realization of large format, low cost staring focal plane arrays (FPAs) in various thermal imaging bands. AlGaAs/InGaAs and AlGaAs/GaAs materials systems have been the standard systems for the construction of mid-wavelength infrared (MWIR) and long-wavelength (LWIR) QWIPs. However AlGaAs/GaAs QWIP FPAs suffer from low quantum and conversion efficiencies under high frame rate (low integration time) and/or low background conditions limiting the application area of standard QWIPs.
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23

Duran, Joshua. "Silicon-Based Infrared Photodetectors for Low-Cost Imaging Applications." University of Dayton / OhioLINK, 2019. http://rave.ohiolink.edu/etdc/view?acc_num=dayton155653478017603.

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24

Taalat, Rachid. "Réalisation et caractérisation électro-optique de photodétecteurs infrarouges à superréseaux InAs/GaSb." Thesis, Montpellier 2, 2013. http://www.theses.fr/2013MON20208/document.

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Ce manuscrit de thèse porte sur l'étude et la réalisation de photodétecteurs infrarouges à superréseaux (SR), constitués d'hétérostructures de semiconducteurs InAs/GaSb. Ces superréseaux InAs/GaSb sont considérés, depuis le milieu des années 2000, comme des structures pouvant satisfaire les besoins de la prochaine génération de photodétecteurs infrarouges (IR). À l'Institut d'Electronique du Sud (IES) de l'Université Montpellier 2, nous maîtrisons la réalisation des structures périodiques à SR par Epitaxie par Jets Moléculaires sur substrat GaSb et la fabrication technologique des photodiodes
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Lantz, Kevin Richard. "Organic/Inorganic Hybrid Nanocomposite Infrared Photodetection by Intraband Absorption." Diss., 2011. http://hdl.handle.net/10161/5647.

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<p>The ability to detect infrared radiation is vital for a host of applications that include optical communication, medical diagnosis, thermal imaging, atmospheric monitoring, and space science. The need to actively cool infrared photon detectors increases their operation cost and weight, and the focus of much recent research has been to limit the dark current and create room-temperature infrared photodetectors appropriate for mid-to-long-wave infrared detection. Quantum dot infrared photodetectors (QDIPs) provide electron quantum confinement in three dimensions and have been shown to demons
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Liu, Kuan-ming, and 劉冠明. "Design and Fabrication of Germanium Quantum Dots Configurations for Near Infrared Photodetection." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/41485894122114831678.

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碩士<br>國立中央大學<br>電機工程學系<br>102<br>This thesis produced high-quality and single-crystal Ge quantum dots (QDs) using selectively oxidation of SiGe pillars, and demonstrated Ge-QD P-I-N near-infrared photodetectors with various sizes of Ge QD. The P-I-N photodetectors exhibit various near-infrared photoresponsivities by tuning different sizes of Ge-QD arrays integrated in the photodetectors. Under 2.5 mW illumination at 850, 980, 1310, and 1570 nm, the photodetectors exhibit the photo-current-to-dark-current ratio as high as 28, 15, 2.3, and 1.6, respectively. Under near-infrared illumination, the
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Shen, Yen-yu, and 沈彥宇. "Characterization of Germanium Quantum Dots Phototransistor for Near Infrared Photodetection and Amplification." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/59315495528892879772.

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碩士<br>國立中央大學<br>電機工程學系<br>102<br>This thesis focuses on the application of Germanium quantum dots (QDs) phototransistor for the near infrared photodetection and amplification. The main characteristics of the Ge QD phototransistor is based on the framed structure of typical metal-oxide-semiconductor field-effect transistor (MOSFET), incorporating 50 nm Ge QDs embedded in gate dielectrics. The heterostructures of 50 nm Ge QDs/SiO2/Si were formed using the selective oxidation of poly-SiGe pillar, incorporating Ge QDs array into the gate dielectrics of MOSFET, which is a compatible approach with p
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HUNG, WEI-TING, and 洪偉庭. "GeSn floating-base heterojunction phototransistors on silicon for short-wave infrared photodetection." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/9p37y6.

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碩士<br>國立中正大學<br>機械工程系研究所<br>107<br>In this study, the purpose is to develop silicon based GeSn alloy pnp phototransis-tors, by using molecular beam epitaxy (MBE) with low-temperature growth techniques. For CMOS compatibility, use of Group IV semiconductor materials, GeSn, is made and a heterojunction phototransistor (HPT) is fabricated. Germanium photodetectors cover full spectral range of telecommunication(1260~1675 nm), but still cannot be operated in the 2 μm communication range. In this study, we show that adding Sn into Ge can shrink the direct and indirect bandgap effectively, thereby ex
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Yu, Chung-Hua, and 喻忠華. "Study of broadband infrared photodetection and thermal radiation control on silicon based micro-nano hybrid structures." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/82608954397987963817.

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碩士<br>國立臺灣大學<br>材料科學與工程學研究所<br>105<br>The infrared absorption spectrum in midinfrared (mid IR, MIR) spectral range contains “fingerprints” of the most common molecular bonds, key to sample composition analysis and is useful for nondestructive and rapid analysis for material characterization and environment monitoring. Furthermore, the MIR light can be applied to thermal image that is corresponding spectral regime for the thermal radiation from room temperature to several hundred degrees Celcius. On the other hand, near infrared (NIR) spectral range is the regime for optical telecommunication.
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Anumol, S. "A Study of Synthesis and Optoelectronics of Copper Iron Chalcogenide Nanocrystals." Thesis, 2020. https://etd.iisc.ac.in/handle/2005/4984.

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Copper iron chalcogenides constitute a promising class of optoelectronic materials courtesy of their narrow bandgaps and earth abundant constitution. However, they are yet to receive the attention they deserve due to the lack of easy synthetic protocols and poorly understood material properties. Discordant narratives in the literature regarding their optoelectronic properties has also prevented them from being used for device-based applications. This thesis is aimed at rectifying a few of these issues. The objective of this thesis is to synthesize and study the properties of copper iron chalc
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Kun-Jheng, Wu. "Superlattice Infrared Photodetector with Double Barriers." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2407200611344000.

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Wu, Kun-Jheng, and 吳坤政. "Superlattice Infrared Photodetector with Double Barriers." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/98695020831974367625.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>94<br>The superlattice structure has been used extensively in the infrared photodetectors. In this thesis, our purpose is to fabricate a superlattice infrared photodetector (SLIP) with high detectivity. First, we propose a novel structure for the superlattice infrared photodetector. The structure is composed of a 15-period superlattice sandwiched between two asymmetric blocking layers. By the simple fabrication process and the measurement setup, we can measure the electrical and optical properties of our devices. This structure shows asymmetric current-voltage chara
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Hu, Ho-Cheng, and 胡合城. "Studies of Quantum Dot Infrared Photodetector." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/61943101035285331011.

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碩士<br>國立交通大學<br>電子工程系<br>89<br>We have designed and fabricated self-assembled InAs-GaAs quantum dot infrared photodetectors which adjusts the dot’s density and impurity’s doping level and growths AlGaAs between quantum dots to decrease dark current. Compare to traditional InAs/GaAs QDIP, our new structure successfully decrease dark current by several order. The intersubband transition peak is observed at the wavelength of 6.5 and shows encouraging normal incident performance characteristic, with detectivity of at a bias of 0.8V and T = 77K . It also shows large responsivity and photocondu
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Tsai, Cheng-Hsuan, and 蔡承軒. "InAs/GaAs quantum dot infrared photodetector." Thesis, 2005. http://ndltd.ncl.edu.tw/handle/80344603298725210425.

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碩士<br>國立清華大學<br>光電工程研究所<br>93<br>Five InAs/GaAs quantum dot infrared photodetector (QDIP) samples with different device structures are discussed in the thesis. The QDIP samples are grown on semi-insulating (100) GaAs substrate by Riber Epineat solid source molecular beam epitaxy (MBE). High dot density of 1 x 1011 cm-2 and short average distance between neighboring quantum dots of 7.4 nm are observed from the uniform quantum dot distribution atomic force microscopy (AFM) image. Three different energy levels are distinguished from the photoluminescence (PL) spectra. The phenomenon is attributed
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Lin, Tsung-Hsiao, and 林宗孝. "Near Infrared Crystal Germanium film Photodetector." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/25637550710516418917.

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碩士<br>國立中央大學<br>光電科學與工程學系<br>103<br>The particular metal-germanium-metal photodetector (PD) is investigated in this research. Germanium has good absorption coefficient in near infrared such as 850nm, 1310nm and 1550nm which are commonly used in optics communication. Unfortunately, the prohibitive cost of germanium wafer makes it difficult to popularize. Radio frequency (RF) sputtering system is used to deposit single crystal intrinsic germanium film to fabricate the photodetector. It not only keeps performance of Ge but also reduces the cost more than a factor of five. In this investigation, i
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Chang, Chia-Yu, and 張嘉佑. "Polymer Near-Infrared Photodetector and its application." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/17691196302665307830.

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Hsu, Chi-Hsiu, and 許齊修. "P- doped Ge quantum dots infrared photodetector." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/64446670494337617929.

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碩士<br>國立臺灣大學<br>電機工程學研究所<br>89<br>Ge quantum dot infrared photodetectors are predicted to have some advantages, such as exhibiting a lower dark current and increasing carrier capture and relaxation time, over conventional quantum infrared photodetectors. While most quantum well infrared photodetectors only weakly response normal incident light, the photoresponse of a Ge QDIP is expected to be sensitive to the normal incident light. In addition, because Ge dots can be grown on a Silicon substrate, Ge QDIPs also provide us a way of the monolithic integration between the detectors and the readou
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Lin, Ruei-Long. "Infrared characteristics of SiGe on SOI and heterojunction internal photoemission infrared photodetector." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-1807200623381300.

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Lin, Ruei-Long, and 林瑞龍. "Infrared characteristics of SiGe on SOI and heterojunction internal photoemission infrared photodetector." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/66972286302599566531.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>94<br>Recently, infrared detectors provide greatest contributions and functions in military, medical and astronomy. In order to integrability with the readout circuitry, we think highly of the devices mainly fabricated by SiGe. And the Si1-xGex/Si heterojunction internal photoemission (HIP) infrared photodetectors have many advantages, such as excellent uniformity, sensitivity to normally incident radiation, higher responsivity and easier integration with readout circuitry. Besides, silicon-on-insulator (SOI) technology has been used in CMOS application in recent
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SHEN, JIAN-YU, and 沈建宇. "Superlattice Infrared Photodetector and 1-D Detector Array." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/82171363791662084833.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>91<br>The superlattice infrared photodetectors have drawn much attention since the observation of intersubband absorption in the far infrared region. For thermal imaging application, the detectors must have high background limited performance temperature TBLIP and 1-D or 2-D (Focal Plane) detector arrays have been used instead of the single detector. In the thesis, we first investigated the effect of the doping density in the superlattice. By the simple fabrication process of samples into devices, and the measurement setup, we can measure the electrica
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Lin, Ding-Jyun, and 林鼎鈞. "Modeling and Simulation of Quantum Well Infrared Photodetector." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/14009147227176627338.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>103<br>The quantum-well infrared photodetectors (QWIPs) have become research focus in recent years due to its many inherent properties, such as highly sensitive, stability, higher fabrication uniformity, and better production yield. In addition, QWIPs can be fabricated into an imaging system with a large area, low power, low cost by using a high-sensitivity focal plane array (FPA). In order to study the basic processes of a quantum structure devices, we must know the relations between the external physical properties and the internal parameters. However, the measure
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Lien, I.-Chun, and 連翊鈞. "Investigation of Graphene Applied on Near Infrared Photodetector." Thesis, 2016. http://ndltd.ncl.edu.tw/handle/33957835316435088911.

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碩士<br>國立中央大學<br>照明與顯示科技研究所<br>105<br>A graphene-germanium-graphene photodetector (GSG PD) is investigated in this research with transparent graphene electrodes. Germanium is a good absorption coefficient material in near infrared wavelength including 850 nm, 1310 nm and 1550 nm for optics communication. Generally, the metal electrode was utilized for the photodetector applications. However, there were a lot of light loss for the non-transparency. In recent years, graphene has been found to be a good transparent conductive film (TCF) with a two-dimensional monolayer composed by sp2-bonded carbo
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Lee, Cheng-De, and 李政德. "Infrared Imaging Analyses for InAs/GaAs Quantum Dot Infrared Photodetector Focal Plane Array." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/46739111721356553893.

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碩士<br>國防大學中正理工學院<br>電子工程研究所<br>95<br>Two 256×256 focal plane arrays (FPAs), 30 and 10 stacked InAs/GaAs quantum dot infrared photodetector (QDIP) structure grown by solid-source molecular beam epi-taxy (MBE) and metal organic chemical vapor deposition (MOCVD) technique, were demonstrated have dual-band mid- (2.7~ 5.6μm) and long- (7.5~ 13.5μm) wavelength normal-incident detection ability without extra grating and passivated process on surface. The 256×256 QDIP FPA hybridized with snapshot-mode readout integrated circuit (ROIC) was mounted in a 68 pin leadless ceramic chip (PLCC) carrier which
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Hsieh, Kuang-Jou. "Subwavelength Metallic Grating Structure on Quantum Well Infrared Photodetector." 2006. http://www.cetd.com.tw/ec/thesisdetail.aspx?etdun=U0001-2407200611185100.

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Lai, Ching-Hung, and 賴景鴻. "Characteristics of Metallic Grating on Quantum Well Infrared Photodetector." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/30242267441707466814.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>95<br>Electromagnetic wave exited around metallic grating and transmitted through grating is complicated and interesting. Recent studies about subwavelength metallic structure were mainly experiments measuring transmission spectrums which photodectors were set vary far from the sample. We wanted to understand the characteristics of grating near the sample. We fabricated grating structure on QWIP and the active region of QWIP is under the surface about 1 μm. By observing spectral response of QWIP with grating, we successively found fundamental characteristics about g
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Hsieh, Kuang-Jou, and 謝寬洲. "Subwavelength Metallic Grating Structure on Quantum Well Infrared Photodetector." Thesis, 2006. http://ndltd.ncl.edu.tw/handle/46740722933625407625.

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碩士<br>國立臺灣大學<br>電子工程學研究所<br>94<br>In this work, we have used metallic grating to diffract the normal incident radiation. Both TE-polarized and TM-polarized light can be detected by QWIP due to finite-size grating effect. For the response of 10.5 μm, we find polarization selectivity is more obvious under backside-illumination among the three different incident directions including normal incidence of 45o-facet, top and back side. And then, we fabricate two devices with the same grating period but different slit areas for topside-illumination. Polarization selectivity is proportional to the slit
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TSAI, YAO-JEN, and 蔡曜任. "The Investigation of InAs/GaAs Quantum Dot Infrared Photodetector." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/46735982971651626160.

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碩士<br>國立臺灣大學<br>電機工程學研究所<br>89<br>In this thesis, the electrical and optical characteristics of InAs/GaAs quantum dot infrared photodetectors (QDIP) prepared by MBE have been studied in detail. The device fabrication processes and measurement system are described. Several phenomena of QDIP are observed and explained. QDIP without blocking barrier shows high responsivity and performance. Broadband detection spectra of QDIP is observed. There are three distinct region of photocurrent as a function of bias. With increasing biases, the photocurrent reaches its maximum value. This is negativ
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Tsai, Chiou-Yun, and 蔡秋雲. "The Characteristics of InAs/GaAs Quantum Dot Infrared Photodetector." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/76669589348610532204.

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碩士<br>國立臺灣大學<br>電機工程學研究所<br>90<br>The self-assembled InAs quantum dots (QDs) growth mechanisms are investigated by using the AFM, SEM and PL. The growth mechanism process can be separated to three stages by the InAs coverage thicknesses: (1) The InAs thickness is too thin to form QDs. The sprayed InAs material forms the thin film, i.e. the wetting layer. (2) The InAs thickness is sufficient to form QDs that are free from dislocations. (3) With further InAs coverage thickness, the near QDs are combined to the 3D islands with dislocations. The single QD’s shape is not the simple pyramid- like bu
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Balakrishnam, Raju J. "Design, Fabrication And Characterization Of Corrugated-Quantum Well Infrared Photodetector." Thesis, 2005. https://etd.iisc.ac.in/handle/2005/1426.

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Balakrishnam, Raju J. "Design, Fabrication And Characterization Of Corrugated-Quantum Well Infrared Photodetector." Thesis, 2005. http://etd.iisc.ernet.in/handle/2005/1426.

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