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Dissertations / Theses on the topic 'InGaAs-InAlAs on InP'

Author: Grafiati

Published: 4 June 2021

Last updated: 2 February 2022

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1

Lee, Kenneth Sunghwan. "InAlAs/InGaAs/InP HEMTs with pseudomorphic Schottky barriers." Thesis, Massachusetts Institute of Technology, 1994. http://hdl.handle.net/1721.1/35976.

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Thesis (M.S.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1994.<br>Includes bibliographical references (p. 77-83).<br>by Kenneth Sunghwan Lee.<br>M.S.

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2

Sinn, Matthew T. (Matthew Thomas). "Surface roughness anisotopy on mismatched InAlAs/InGaAs/InP heterostructures." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/11457.

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3

Ernst, Alexander N. (Alexander Nicolai). "Dynamics of the kink effect in InAlAs/InGaAs/InP HEMTs." Thesis, Massachusetts Institute of Technology, 1997. http://hdl.handle.net/1721.1/42741.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1997.<br>Includes bibliographical references (leaves 68-72).<br>by Alexander N. Ernst.<br>M.Eng.

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4

Garcia, Perez Miguel Angel. "Etude des propriétés optiques des microstructures InGaAs/InAlAs épitaxiées sur InP." Lyon, INSA, 1995. http://www.theses.fr/1995ISAL0086.

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Ce travail porte sur l'étude des propriétés optiques des couches minces de InGaAs/InAlAs épitaxiées sur InP. Il comporte trois volets principaux : - La première partie de ce travail concerne l'étude des interfaces de type II dans le système InAIAs/lnP. Nos échantillons ont été élaborés par épitaxie en phase vapeur aux organométalliques (EPVOM). Nous avons analysé la luminescence associée aux interfaces directe (InAlAs sur lnP) et inverse (InP sur InAIAs ), et nous avons pu montrer que ces interfaces n'étaient pas équivalentes. Dans la deuxième partie, nous présentons l'effet des interruptions

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5

Moolji, Akbar. "Performance tradeoffs in scaling InAlAs/InGaAs/InP metal-semiconductor-metal (MSM) photodetectors." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/36975.

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6

Packeer, Mohamed Mohamed Fauzi Bin. "Advanced InGaAs/InAlAs/InP pHEMTs for low noise and ultra fast electronics." Thesis, University of Manchester, 2015. https://www.research.manchester.ac.uk/portal/en/theses/advanced-ingaasinalasinp-phemts-for-low-noise-and-ultra-fast-electronics(939e7518-7645-46fe-a360-5a22794551a3).html.

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Conventional pseudomorphic High Electron Mobility Transistor (pHEMTs) with lattice-matched InGaAs/InAlAs/InP structures exhibit high mobility and saturation velocity, and are hence attractive for the fabrication of three-terminal low noise and high frequency devices, which operate at room temperature. The major drawbacks of conventional pHEMT devices are the very low breakdown voltage (< 2 V) and the very high gate leakage current (~ 1 mA/mm), which degrade device, performance especially in MMIC LNAs. These drawbacks are caused by the impact ionization in the low band gap, i.e. the InxGa(1-x)A

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7

VUMMIDI, MURALI KRISHNA PRASAD. "Thermionic Emission Diffusion Model of InP-based Pnp Heterojunction Bipolar Transistor with Non-Uniform Base Doping." University of Cincinnati / OhioLINK, 2003. http://rave.ohiolink.edu/etdc/view?acc_num=ucin1060110500.

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8

Gardès, Cyrille. "Composants nanométriques balistiques de la filière InGaAs/InAlAs/InP pour applications hautes fréquences." Thesis, Lille 1, 2008. http://www.theses.fr/2008LIL10003/document.

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La montée en fréquence des composants électroniques conventionnels tels que les HEMT, grâce aux règles de changement d'échelle, atteint ses limites. C'est dans ce contexte qu'il est intéressant de développer des composants d'architecture différente, comme les dispositifs balistiques, dont les dimensions sont de l'ordre du libre parcours moyen à température ambiante. Cette étude s'inscrit dans l'optimisation technologique et la caractérisation électrique de composants balistiques de la filière InGaAs/lnAlAs pseudomorphique sur substrat d'InP. Les propriétés nonlinéaires des jonctions balistique

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9

Liu, Dongmin. "Design, Fabrication and Characterization of InAlAs/InGaAs/InAsP Composite Channel HEMTs." The Ohio State University, 2008. http://rave.ohiolink.edu/etdc/view?acc_num=osu1213299848.

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10

Bennett, Brian R. (Brian Robert). "Molecular beam epitaxial growth and charcterization of mismatched InGaAs and InAlAs layers on InP." Thesis, Massachusetts Institute of Technology, 1993. http://hdl.handle.net/1721.1/33483.

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11

Ian, Ka Wa. "Routes to cost effective realisation of high performance submicron gate InGaAs/InAlAs/InP pHEMT." Thesis, University of Manchester, 2013. https://www.research.manchester.ac.uk/portal/en/theses/routes-to-cost-effective-relisation-of-high-performance-submicron-gate-ingaasinalasinp-phemt(5aac071c-a4c8-48c7-aadf-e1f3e562e384).html.

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The Square Kilometre Array (SKA) is known to be the most powerful radio telescope of its type. In support of its high observational power, it is estimated that thousands of antenna unit equipped with millions of LNA (low noise amplifier) will be deployed over a large area (radius>3000km). The stringent requirements for high performance and low cost LNA design bring about many challenges in terms of material growth, device fabrication and low noise circuit designs. For the past decade, the Manchester group has been wholeheartedly committed to the research and development of high performance, lo

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12

Mohamad, Isa Muammar Bin. "Low Noise Amplifiers using highly strained InGaAs/InAlAs/InP pHEMT for implementation in the Square Kilometre Array (SKA)." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/low-noise-amplifiers-using-highly-strained-ingaasinalasinp-phemt-for-implementation-in-the-square-kilometre-array-ska(31b6cbae-7b7e-43fe-a612-b3555dd2263d).html.

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The Square Kilometre Array (SKA) is a multibillion and a multinational science project to build the world’s largest and most sensitive radio telescope. For a very large field of view, the combined collecting area would be one square kilometre (or 1, 000, 000 square metre) and spread over more than 3,000 km wide which will require a massive count of antennas (thousands). Each of the antennas contains hundreds of low noise amplifier (LNA) circuits. The antenna arrays are divided into low, medium and high operational frequencies and located at different positions to boost up the telescope’s scann

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13

Ahmad, Norhawati Binti. "Modelling and design of Low Noise Amplifiers using strained InGaAs/InAlAs/InP pHEMT for the Square Kilometre Array (SKA) application." Thesis, University of Manchester, 2012. https://www.research.manchester.ac.uk/portal/en/theses/modelling-and-design-of-low-noise-amplifiers-using-strained-ingaasinalasinp-phemt-for-the-square-kilometre-array-ska-application(b2b50fd8-0a13-4f71-b3f0-616ee4b2a82b).html.

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The largest 21st century radio telescope, the Square Kilometre Array (SKA) is now being planned, and the first phase of construction is estimated to commence in the year 2016. Phased array technology, the key feature of the SKA, requires the use of a tremendous number of receivers, estimated at approximately 37 million. Therefore, in the context of this project, the Low Noise Amplifier (LNA) located at the front end of the receiver chain remains the critical block. The demanding specifications in terms of bandwidth, low power consumption, low cost and low noise characteristics make the LNA top

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14

Semtsiv, Mykhaylo. "InGaAs-AlAs and InGaAs-InGaP strain-compensated heterostructures for short wavelength intersubband transitions and lasers." Doctoral thesis, [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=972710450.

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15

LI, ZHEN-WEI, and 李振偉. "The study of InGaAs/InAlAs/InP epitaxiallayers by low-pressure MOCVD." Thesis, 1991. http://ndltd.ncl.edu.tw/handle/56766635516325898827.

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16

WANG, ZHEN-ZHONG, and 王振中. "The InAlAs/InGaAs/InP field effect transistor grown by LP-MOCVD." Thesis, 1991. http://ndltd.ncl.edu.tw/handle/62479808717683290249.

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17

Chen, Hsin-Hung, та 陳信宏. "Investigation of δ-doped InAlAs/InGaAs/InP High Electron Mobility Transistor". Thesis, 2005. http://ndltd.ncl.edu.tw/handle/27107823135590119996.

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碩士<br>逢甲大學<br>電子工程所<br>93<br>In this thesis, the characteristics of the InAlAs/InGaAs/InP HEMT with different channel structures by metal organic chemical vapor deposition (LP-MOCVD) have been studied. The channel structures were lattice-match channel, step-graded channel and inverse linear-graded channel, respectively. InP-based HEMTs have demonstrated excellent high frequency and low noise performance. But the power performance is limited by excessive leakage currents and relatively low breakdown voltage. In order to improve the breakdown characteristics, reduction of the channel thickn

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18

Wang, Jhih-Hao, and 王志豪. "The Study of Simulation InAlAs/InAs/InGaAs System for InP High Electron Mobility Transistor." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/g5k3gf.

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碩士<br>國立交通大學<br>影像與生醫光電研究所<br>102<br>In my research thesis, to study high frequency of characteristics InAlAs / InGaAs/InP pHEMT have been simulated by using Silvaco software. The main objective of research is to study the effects of variations of supply layer thicknesses and then it has optimization to change the device structure. The important of DC and RF parameters such as drain current, transconductance and current gain cut off frequency are extracted from these simulation results which that device material exhibits optimized performance. However, the simulation device of true meaning is

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19

CHEN, JUN-YAN, and 陳鈞彥. "Fabrication and Measurement of High-speed InAlAs/InGaAs Avalanche Photodiode and InP Micro Lens." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/j98ua6.

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碩士<br>國立臺北科技大學<br>光電工程系<br>107<br>In the past few decades, avalanche photodiodes (APDs) have been widely used in long distance fiber-optic communication systems. In recent years, which more high-speed avalanche photodiodes are used in long or short distance fiber optic communication and laser rangefinder. The application of APD device is getting more and more attention. In terms of avalanche layer material selection, the lattice constant of indium aluminum arsenide (In0.52Al0.48As; InAlAs) is matched with indium gallium arsenide (In0.53Ga0.47As; InGaAs) and indium phosphide (InP), and InAlAs h

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20

Tönnesmann, Andres [Verfasser]. "Untersuchung von pseudomorphen InGaAs/InAlAs/InP-high-electron-mobility-Transistoren im Hinblick auf kryogene Anwendungen / vorgelegt von Andres Tönnesmann." 2002. http://d-nb.info/968459471/34.

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