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Journal articles on the topic 'InGaAs-InAlAs on InP'

Author: Grafiati

Published: 4 June 2021

Last updated: 2 February 2022

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1

Павленко, И. А., та И. С. Василевский. "ЭЛЕКТРОННЫЕ ТРАНСПОРТНЫЕ СВОЙСТВА СОСТАВНЫХ КВАНТОВЫХ ЯМ INALAS/INGAAS НА ПОДЛОЖКАХ INP. СОДЕРЖАЩИХ НАНОВСТАВКУ INAS". NANOINDUSTRY Russia 96, № 3s (2020): 688–89. http://dx.doi.org/10.22184/1993-8578.2020.13.3s.688.689.

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В результате исследования гетер о структур с составной квантовой ямой InAlAs/InGaAs/InAs/InGaAs/InAlAs экспериментально определены подвижность, концентрация и эффективная масса электронов. Обнаружена анизотропия проводимости. Установлена высокая чувствительность электрофизических параметров к изменениям температуры роста составной квантовой ямы. Выявлена оптимальная температура роста СКЯ. As a result of the study of heterostructures with an InAlAs/InGaAs/InAs/InGaAs/InAlAs composite quantum well, the mobility, concentration and effective mass of electrons have been experimentally determined. A

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2

Kappelt, M., V. Türck, M. Grundmann, H. Cerva, and D. Bimberg. "InP/InAlAs/InGaAs quantum wires." III-Vs Review 9, no. 6 (1996): 32–38. http://dx.doi.org/10.1016/s0961-1290(96)80096-2.

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3

Mountjoy, G., P. A. Crozier, P. L. Fejes, R. K. Tsui, and G. D. Kramer. "High Resolution Electron Microscopy of InGaAs/InAIAs Interfaces." Proceedings, annual meeting, Electron Microscopy Society of America 54 (August 11, 1996): 120–21. http://dx.doi.org/10.1017/s042482010016306x.

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Recently, quantum wells (QW) have been constructed using the (In0.532Ga0.468)As/ (In0.522Al0.478)As system (hereafter InGaAs/In Al As), which is lattice matched to InP (lattice constant of 5.869Å). In order to understand the properties of such QWs, it is important to have knowledge of the structure and composition of interfaces. For III-V materials, compositional changes affect the <200> frequency component of the high resolution electron microscopy (HREM) image intensity (I200). This underlies the “chemical imaging” approach. Simulations for InGaAs/InAlAs interfaces suggest optimum cond

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4

Kuznetsov, Kirill, Aleksey Klochkov, Andrey Leontyev, et al. "Improved InGaAs and InGaAs/InAlAs Photoconductive Antennas Based on (111)-Oriented Substrates." Electronics 9, no. 3 (2020): 495. http://dx.doi.org/10.3390/electronics9030495.

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The terahertz wave generation by spiral photoconductive antennas fabricated on low-temperature In0.5Ga0.5As films and In0.5Ga0.5As/In0.5Al0.5As superlattices is studied by the terahertz time-domain spectroscopy method. The structures were obtained by molecular beam epitaxy on GaAs and InP substrates with surface crystallographic orientations of (100) and (111)A. The pump-probe measurements in the transmission geometry and Hall effect measurements are used to characterize the properties of LT-InGaAs and LT-InGaAs/InAlAs structures. It is found that the terahertz radiation power is almost four t

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5

Peiró, F., J. C. Ferrer, A. Cornet, M. Calamiotou, and A. Georgakilas. "Lateral modulations in InAlAs/InP and InGaAs/InP systems." physica status solidi (a) 195, no. 1 (2003): 32–37. http://dx.doi.org/10.1002/pssa.200306293.

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6

Mitra, H., B. B. Pal, S. Singh, and R. U. Khan. "Optical effect in InAlAs/InGaAs/InP MODFET." IEEE Transactions on Electron Devices 45, no. 1 (1998): 68–77. http://dx.doi.org/10.1109/16.658813.

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7

Feuer, M. D., J. M. Kuo, S. C. Shunk, R. E. Behringer, and T. Y. Chang. "Microwave performance of InGaAs/InAlAs/InP SISFETs." IEEE Electron Device Letters 9, no. 4 (1988): 162–64. http://dx.doi.org/10.1109/55.676.

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8

Peng, C. K., M. I. Aksun, A. A. Ketterson, H. Morkoc, and K. R. Gleason. "Microwave performance of InAlAs/InGaAs/InP MODFET's." IEEE Electron Device Letters 8, no. 1 (1987): 24–26. http://dx.doi.org/10.1109/edl.1987.26538.

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9

Малеев, Н. А., В. А. Беляков, А. П. Васильев та ін. "Молекулярно-пучковая эпитаксия структур InGaAs/InAlAs/ AlAs для гетеробарьерных варакторов". Физика и техника полупроводников 51, № 11 (2017): 1484. http://dx.doi.org/10.21883/ftp.2017.11.45095.09.

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Представлены результаты исследований по оптимизации технологии молекулярно-пучковой эпитаксии структур InGaAs/InAlAs/AlAs для гетеробарьерных варакторов. Выбор температуры держателя подложки, скорости роста и соотношения потоков элементов III и V групп при синтезе отдельных областей гетероструктуры, толщина AlAs-вставок и качество границ барьерных слоев являются критическими параметрами для получения оптимальных характеристик гетеробарьерных варакторов. Предложенная конструкция трехбарьерных структур гетеробарьерных варакторов с непосредственно примыкающими к гетеробарьеру InAlAs/AlAs/InAlAs т

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10

Stano, Alessandro. "Chemical Etching Characteristics of InGaAs / InP and InAlAs / InP Heterostructures." Journal of The Electrochemical Society 134, no. 2 (1987): 448–52. http://dx.doi.org/10.1149/1.2100477.

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11

Żak, Dariusz, Jarosław Jureńczyk, and Janusz Kaniewski. "Zener Phenomena in InGaAs/InAlAs/InP Avalanche Photodiodes." Detection 02, no. 02 (2014): 10–15. http://dx.doi.org/10.4236/detection.2014.22003.

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12

Czuba, Krzysztof, Jaroslaw Jurenczyk, and Janusz Kaniewski. "A study of InGaAs/InAlAs/InP avalanche photodiode." Solid-State Electronics 104 (February 2015): 109–15. http://dx.doi.org/10.1016/j.sse.2014.12.001.

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13

Muszalski, J., J. Kaniewski, and K. Kalinowski. "Low dark current InGaAs/InAlAs/InP avalanche photodiode." Journal of Physics: Conference Series 146 (January 1, 2009): 012028. http://dx.doi.org/10.1088/1742-6596/146/1/012028.

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14

Streit, D. C., K. L. Tan, R. M. Dia, et al. "High performance W-band InAlAs-InGaAs-InP HEMTs." Electronics Letters 27, no. 13 (1991): 1149. http://dx.doi.org/10.1049/el:19910716.

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15

Dickmann, J., H. Haspeklo, A. Geyer, H. Daembkes, H. Nickel, and R. Lösch. "High performance fully passivated InAlAs/InGaAs/InP HFET." Electronics Letters 28, no. 7 (1992): 647. http://dx.doi.org/10.1049/el:19920409.

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16

Журавлев, К. С., A. M. Гилинский, И. Б. Чистохин та ін. "Мощные СВЧ-фотодиоды на основе гетероструктур InAlAs/InGaAs, синтезируемых методом молекулярно-лучевой эпитаксии". Журнал технической физики 91, № 7 (2021): 1158. http://dx.doi.org/10.21883/jtf.2021.07.50957.347-20.

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Описаны конструкция и технологии изготовления мощных СВЧ-мезафотодиодов с барьером Шоттки диаметром от 10 до 40 &mu;m и обратной засветкой через подложку на основе гетероструктур InAlAs/InGaAs/InP, выращиваемых методом молекулярно-лучевой эпитаксии. Рабочая частота фотодиодов диаметром 10 &mu;m составляет 40 GHz, а максимальная выходная СВЧ-мощность на частоте 20 GHz для фотодиодов диаметром 15 &mu;m достигает 58 mW. Коэффициент амплитудно-фазового преобразования составил 1.5 rad/W, что превосходит литературные данные и делает данную конструкцию фотодиодов перспективной для примене

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17

ARDARAVICIUS, L., J. LIBERIS, A. MATULIONIS, and M. RAMONAS. "ESTIMATION OF ELECTRON ENERGY RELAXATION TIME IN 2DEG CHANNELS FROM TRANSVERSE AND LONGITUDINAL NOISE." Fluctuation and Noise Letters 02, no. 01 (2002): L53—L63. http://dx.doi.org/10.1142/s0219477502000592.

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Microwave noise is investigated in heterostructures subjected to an electric field applied parallel to the interfaces. The longitudinal and transverse noise temperatures are measured and simulated in the plane of electron confinement in the directions perpendicular and parallel to the electric field. Monte Carlo simulation is performed for a subcritically doped InAlAs/InGaAs/InAlAs heterostructure containing a two-dimensional electron gas in a single channel. The simulated longitudinal noise temperature is found to be nearly the same as the transverse one in the field range where the interwell

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18

Bennett, Brian R., and Jesús A. del Alamo. "Mismatched InGaAs/InP and InAlAs/InP heterostructures with high crystalline quality." Journal of Applied Physics 73, no. 7 (1993): 3195–202. http://dx.doi.org/10.1063/1.352963.

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19

Cavassilas, N., F. Aniel, P. Boucaud, et al. "Electroluminescence of composite channel InAlAs/InGaAs/InP/InAlAs high electron mobility transistor." Journal of Applied Physics 87, no. 5 (2000): 2548–52. http://dx.doi.org/10.1063/1.372217.

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20

Chen, W. Q., and S. K. Hark. "Strain‐induced effects in (111)‐oriented InAsP/InP, InGaAs/InP, and InGaAs/InAlAs quantum wells on InP substrates." Journal of Applied Physics 77, no. 11 (1995): 5747–50. http://dx.doi.org/10.1063/1.359219.

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21

Wallart, X., B. Pinsard, and F. Mollot. "High-mobility InGaAs∕InAlAs pseudomorphic heterostructures on InP (001)." Journal of Applied Physics 97, no. 5 (2005): 053706. http://dx.doi.org/10.1063/1.1858871.

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22

Sato, H., J. C. Vlcek, C. G. Fonstad, B. Meskoob, and S. Prasad. "InGaAs/InAlAs/InP collector-up microwave heterojunction bipolar transistors." IEEE Electron Device Letters 11, no. 10 (1990): 457–59. http://dx.doi.org/10.1109/55.62995.

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23

Lott, J. A., J. F. Klem, H. T. Weaver, C. P. Tigges, and V. Radoslovich-Cibicki. "Charge storage in InAlAs/InGaAs/InP floating gate heterostructures." Electronics Letters 26, no. 14 (1990): 972. http://dx.doi.org/10.1049/el:19900632.

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24

Streit, Dwight C. "Graded-channel InGaAs–InAlAs–InP high electron mobility transistors." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 13, no. 2 (1995): 774. http://dx.doi.org/10.1116/1.588161.

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25

Li, X., W. I. Wang, A. Y. Cho, and D. L. Sivco. "Planar-doped n-type InAlAs/InGaAs MODFETs on InP." IEEE Electron Device Letters 14, no. 4 (1993): 170–72. http://dx.doi.org/10.1109/55.215161.

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26

Munns, G. O., M. E. Sherwin, T. Brock, et al. "InAlAs/InGaAs/InP sub-micron HEMTs grown by CBE." Journal of Crystal Growth 120, no. 1-4 (1992): 184–88. http://dx.doi.org/10.1016/0022-0248(92)90388-y.

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27

Ghidoni, Chiara, Rita Magri, and Stefano Ossicini. "The electronic and optical properties of InGaAs/InP and InAlAs/InP superlattices." Surface Science 489, no. 1-3 (2001): 59–71. http://dx.doi.org/10.1016/s0039-6028(01)01128-1.

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28

Kawamura, Y., K. Wakita, Y. Itaya, Y. Yoshikuni, and H. Asahi. "Monolithic integration of InGaAs/InP DFB lasers and InGaAs/InAlAs MQW optical modulators." Electronics Letters 22, no. 5 (1986): 242. http://dx.doi.org/10.1049/el:19860166.

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29

Mokhtarnejad, Mahshid, Morteza Asgari, and Arash Sabatyan. "Investigating Optical Properties of One-Dimensional Photonic Crystals Containing Semiconductor Quantum Wells." International Journal of Optics 2017 (2017): 1–8. http://dx.doi.org/10.1155/2017/7280613.

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This study examined MQWs made of InGaAs/GaAs, InAlAs/InP, and InGaAs/InP in terms of their band structure and reflectivity. We also demonstrated that the reflectivity of MQWs under normal incident was at maximum, while both using a strong pump and changing incident angle reduced it. Reflectivity of the structure for a weak probe pulse depends on polarization, intensity of the pump pulse, and delay between the probe pulse and the pump pulse. So this system can be used as an ultrafast all-optical switch which is inspected by the transfer matrix method. After studying the band structure of the on

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30

Arbiol, J., F. Peiró, A. Cornet, K. Michelakis, and A. Georgakilas. "Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 17, no. 6 (1999): 2540. http://dx.doi.org/10.1116/1.591124.

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31

Jin-Ping, Ao, Zeng Qing-Ming, Zhao Yong-Lin, et al. "Enhancement-Mode InAlAs/InGaAs/InP High Electron Mobility Transistor with Strained InAlAs Barrier Layer." Chinese Physics Letters 17, no. 8 (2000): 619–20. http://dx.doi.org/10.1088/0256-307x/17/8/027.

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32

Hybertsen, Mark S. "Band offset transitivity at the InGaAs/InAlAs/InP(001) heterointerfaces." Applied Physics Letters 58, no. 16 (1991): 1759–61. http://dx.doi.org/10.1063/1.105082.

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33

Lai, R., H. Wang, K. L. Tan, et al. "A monolithically integrated 120-GHz InGaAs/InAlAs/InP HEMT amplifier." IEEE Microwave and Guided Wave Letters 4, no. 6 (1994): 194–95. http://dx.doi.org/10.1109/75.294290.

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34

Moon, Jeong S., Rajesh Rajavel, Steven Bui, Danny Wong, and David H. Chow. "Room-temperature InAlAs∕InGaAs∕InP planar resonant tunneling-coupled transistor." Applied Physics Letters 87, no. 18 (2005): 183110. http://dx.doi.org/10.1063/1.2126108.

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35

Zhang, Y. G., K. J. Nan, and A. Z. Li. "Characterization of InAlAs/InGaAs/InP mid-infrared quantum cascade lasers." Spectrochimica Acta Part A: Molecular and Biomolecular Spectroscopy 58, no. 11 (2002): 2323–28. http://dx.doi.org/10.1016/s1386-1425(02)00047-1.

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36

Ando, Y., A. Cappy, K. Marubashi, K. Onda, H. Miyamoto, and M. Kuzuhara. "Noise parameter modeling for InP-based pseudomorphic HEMTs [InAlAs-InGaAs]." IEEE Transactions on Electron Devices 44, no. 9 (1997): 1367–74. http://dx.doi.org/10.1109/16.622590.

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37

Wang, S. C., J. S. Liu, K. C. Hwang, et al. "High performance fully selective double recess InAlAs/InGaAs/InP HEMTs." IEEE Electron Device Letters 21, no. 7 (2000): 335–37. http://dx.doi.org/10.1109/55.847372.

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38

Tong, M., K. Nummila, A. A. Ketterson, I. Adesida, L. Aina, and M. Mattingly. "Selective Wet Etching Characteristics of Lattice‐Matched InGaAs / InAlAs / InP." Journal of The Electrochemical Society 139, no. 10 (1992): L91—L93. http://dx.doi.org/10.1149/1.2069023.

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39

Henderson, T. S., A. H. Taddiken, and Y. C. Kao. "An InAlAs/InGaAs heterojunction bipolar transistor clocked latch on InP." IEEE Transactions on Electron Devices 37, no. 6 (1990): 1537–39. http://dx.doi.org/10.1109/16.106253.

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40

Nummila, K., M. Tong, A. Ketterson, I. Adesida, C. Caneau, and R. Bhat. "MOVPE-grown InAlAs/InGaAs/Inp MODFETs with very high fT." Electronics Letters 29, no. 3 (1993): 274. http://dx.doi.org/10.1049/el:19930187.

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41

Murata, K., and Y. Yamane. "74 GHz dynamic frequency divider using InAlAs/InGaAs/InP HEMTs." Electronics Letters 35, no. 23 (1999): 2024. http://dx.doi.org/10.1049/el:19991382.

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42

Otsuji, T., M. Yoneyama, Y. Imai, T. Enoki, and Y. Umeda. "64 Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs." Electronics Letters 33, no. 17 (1997): 1488. http://dx.doi.org/10.1049/el:19970959.

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43

Otsuji, T., K. Murata, T. Enoki, and Y. Umeda. "80 Gbit/s multiplexer IC using InAlAs/InGaAs/InP HEMTs." Electronics Letters 34, no. 1 (1998): 113. http://dx.doi.org/10.1049/el:19980001.

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44

Pao, Y. C., and J. S. Harris. "Low-conductance drain (LCD) design of InAlAs/InGaAs/InP HEMT's." IEEE Electron Device Letters 13, no. 10 (1992): 535–37. http://dx.doi.org/10.1109/55.192824.

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45

Shigekawa, N., T. Enoki, T. Furuta, and H. Ito. "Electroluminescence of InAlAs/InGaAs HEMTs lattice-matched to InP substrates." IEEE Electron Device Letters 16, no. 11 (1995): 515–17. http://dx.doi.org/10.1109/55.468285.

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46

Sommer, V., J. Hedrich, K. Weigel, O. Perillieux, and K. Heime. "Observation and modelling of RTS in InAlAs/InGaAs/InP HFETs." Solid-State Electronics 38, no. 11 (1995): 1917–22. http://dx.doi.org/10.1016/0038-1101(95)00019-p.

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47

Belenky, G. L., P. A. Garbinski, S. Luryi, et al. "Collector‐up light‐emitting charge injection transistors inn‐InGaAs/InAlAs/p‐InGaAs andn‐InGaAs/InP/p‐InGaAs heterostructures." Journal of Applied Physics 73, no. 12 (1993): 8618–27. http://dx.doi.org/10.1063/1.353393.

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48

Малеев, Н. А., М. А. Бобров, А. Г. Кузьменков та ін. "Гетеробарьерные варакторы с неоднородно легированными модулирующими слоями". Письма в журнал технической физики 45, № 20 (2019): 51. http://dx.doi.org/10.21883/pjtf.2019.20.48396.17960.

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Optimal capacitance-voltage characteristic is critical for heterobarrier varactor diode (HBV) performance in terms of multiplication efficiency in mm- and sub-mm wave ranges. Numerical model of capacitance-voltage characteristics and leakage current for HBV with arbitrary heterostructure composition and doping profile was verified on published data and original experimental results. Designed HBV heterostructure with three undoped InAlAs/AlAs/InAlAs barriers surrounded with non-uniformly doped n-InGaAs modulation layers was grown by molecular-beam epitaxy on InP substrate and test HBV diodes ha

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49

Ahmad, Norhawati, S. S. Jamuar, M. Mohammad Isa, et al. "Extrinsic and Intrinsic Modeling of InGaAs/InAlAs pHEMT for Wireless Applications." Applied Mechanics and Materials 815 (November 2015): 369–73. http://dx.doi.org/10.4028/www.scientific.net/amm.815.369.

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This paper presents the linear modelling of high breakdown InP pseudomorphic High Electron Mobility Transistors (pHEMT) that have been developed and fabricated at the University of Manchester (UoM) for low noise applications mainly for the Square Kilometre Array (SKA) project. The ultra-low leakage properties of a novel InGaAs/InAlAs/InP pHEMTs structure were used to fabricate a series of transistor with total gate width ranging from 0.2 mm to 1.2 mm. The measured DC and S-Parameters data from the fabricated devices were then used for the transistors’ modelling. The transistors demonstrated to

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50

Галиев, Г. Б., А. Н. Клочков, И. С. Васильевский та ін. "Электронные свойства приповерхностных квантовых ям InGaAs/InAlAs с инвертированным легированием на подложках InP". Физика и техника полупроводников 51, № 6 (2017): 792. http://dx.doi.org/10.21883/ftp.2017.06.44559.8456.

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Сравниваются электронные транспортные и оптические свойства гетероструктур с приповерхностной квантовой ямой InGaAs/InAlAs при использовании инвертированного (снизу от квантовой ямы) и стандартного (сверху от квантовой ямы) delta-легирования атомами Si. Показано, что при использовании инвертированного легирования происходит увеличение плотности двумерных электронов в квантовой яме по сравнению со стандартным расположением легирующего слоя при идентичных составах и толщинах других слоев гетероструктур. Наблюдаемые особенности низкотемпературного электронного транспорта (осцилляций Шубникова--де

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