Relevant bibliographies by topics / Inhomogenous doping of channel

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'Inhomogenous doping of channel'

Author: Grafiati
Published: 3 June 2025
Last updated: 20 July 2025

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Journal articles on the topic "Inhomogenous doping of channel"

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Saraniti, M., G. Zandler, G. Formicone, and S. Goodnick. "Cellular Automata Studies of Vertical Silicon Devices." VLSI Design 8, no. 1-4 (1998): 111–15. http://dx.doi.org/10.1155/1998/89897.

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We present systematic theoretical Cellular Automata (CA) studies of a novel nanometer scale Si device, namely vertically grown Metal Oxide Field Effect Transistors (MOSFET) with channel lengths between 65 and 120 nm. The CA simulations predict drain characteristics and output conductance as a function of gate length. The excellent agreement with available experimental data indicates a high quality oxide/semiconductor interface. Impact ionization is shown to be of minor importance. For inhomogeneous p-doping profiles along the channel, significantly improved drain current saturation is predicte
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Pankratov, Evgeny L., and Elena A. Bulaeva. "An analytical approach for analysis and optimization of formation of field-effect heterotransistors." Multidiscipline Modeling in Materials and Structures 12, no. 4 (2016): 578–604. http://dx.doi.org/10.1108/mmms-09-2015-0057.

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Purpose The purpose of this paper is to analyze and optimize the formation of field-effect heterotransistors using analytical approach. The approach makes it possible to analyze mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure. The optimization makes it possible to decrease dimensions of the heterotransistors and to increase speed of transport of charge carriers during functioning of the transistors. Design/methodology/approach The authors introduce an analytical approach for analysis of mass and heat
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Lin, Jinfeng, Qiling Lu, Xiao Wu, et al. "In situ boost and reversible modulation of dual-mode photoluminescence under an electric field in a tape-casting-based Er-doped K0.5Na0.5NbO3 laminar ceramic." Journal of Materials Chemistry C 7, no. 26 (2019): 7885–92. http://dx.doi.org/10.1039/c9tc01356c.

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RÖHLER, J. "THE BULGE IN THE BASAL PLANE AREA OF CUPRATE SUPERCONDUCTORS." International Journal of Modern Physics B 19, no. 01n03 (2005): 255–57. http://dx.doi.org/10.1142/s0217979205028359.

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The bulge in the doping dependence of the basal plane area of cuprate superconductors is shown to be an effect of the particular inhomogenous electronic structure created by the dense packing of paired self-protected singlets (PSPS) in CuO 2 lattices.
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Wei, Wei, A. V. Nagasekhar, Guang Chen, Yip Tick-Hon, and Kun Xia Wei. "Origin of inhomogenous behavior during equal channel angular pressing." Scripta Materialia 54, no. 11 (2006): 1865–69. http://dx.doi.org/10.1016/j.scriptamat.2006.02.026.

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Zhang, Xiao-Bo, Xin Qiao, Li-Hong Cheng, Ai-Xia Zhang, and Ju-Kui Xue. "Coherent control of the THz radiation in an inhomogenous plasma channel." Journal of Physics: Conference Series 875 (July 2017): 022037. http://dx.doi.org/10.1088/1742-6596/875/3/022037.

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Yao, Bing, Rongsheng Li, Chenxi Zhang, et al. "Tuning the morphology of 2D transition metal chalcogenides via oxidizing conditions." Journal of Physics: Condensed Matter 34, no. 19 (2022): 195001. http://dx.doi.org/10.1088/1361-648x/ac54e5.

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Abstract Two-dimensional transition metal chalcogenides (TMCs) are emerging as an intriguing platform to realize nascent properties in condensed matter physics, materials science and device engineering. Controllable growing of TMCs becomes increasingly important, especially for the layer number, doping, and morphology. Here, we successfully tune the morphology of MoS2, MoSe2, WS2 and WSe2, from homogenous films to individual single crystalline grains only via changing the oxidizing growth conditions. The oxidization degrees are determined by the oxygen that adsorbed on substrates and the oxyge
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Ye, Shuangli, Limei Klar, Andreas Ney, et al. "Effects of the Inhomogenous Co Doping on the Magnetoresistance of Zn1−xCoxO Epitaxial Films." Journal of Nanoscience and Nanotechnology 12, no. 2 (2012): 1054–58. http://dx.doi.org/10.1166/jnn.2012.4266.

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Bernardi, Heide H., Hugo Ricardo Zschommler Sandim, Bert Verlinden, and Dierk Raabe. "Recrystallization of Niobium Single Crystals Deformed by ECAE." Materials Science Forum 558-559 (October 2007): 125–30. http://dx.doi.org/10.4028/www.scientific.net/msf.558-559.125.

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High-purity niobium single crystals were deformed by equal-channel angular extrusion (ECAE) at room temperature to an equivalent Von Mises strain of about 1.15. Deformed samples were annealed in vacuum from 500 to 800oC for 1 hour to investigate their microstructure evolution. The microstructure of deformed and annealed samples was characterized by scanning electron microscopy (SEM), electron backscatter diffraction (EBSD), and Vickers microhardness testing. The deformed structure after one ECAE pass is rather inhomogenous and consists of parallel sets of coarse shear bands whose spacing varie
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KUMARI, RITI, MANISH GOSWAMI, and B. R. SINGH. "THE IMPACT OF CHANNEL ENGINEERING ON SHORT CHANNEL BEHAVIOR OF NANO FIN-FETs." International Journal of Nanoscience 11, no. 02 (2012): 1250021. http://dx.doi.org/10.1142/s0219581x12500214.

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This short note presents the simulation result on the effect of channel engineering i.e., non-uniform channel doping on short channel effects (SCE) in nano Fin-FET devices using Silvaco TCAD tool. The nano Fin-FET structures were generated using DEVEDIT and the effect of channel doping concentration has been studied. The optimum doping concentration profile has been observed to considerably improve the SCE in general and drain induced barrier lowering (DIBL) in particular.
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Dissertations / Theses on the topic "Inhomogenous doping of channel"

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Ouma, Dennis Okumu. "Optimal design of channel doping for fully depleted SOI MOSFETs." Thesis, Massachusetts Institute of Technology, 1995. http://hdl.handle.net/1721.1/37032.

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Thesis (M. Eng.)--Massachusetts Institute of Technology, Dept. of Electrical Engineering and Computer Science, 1995.<br>Includes bibliographical references (leaves 87-89).<br>by Dennis Okumu Ouma.<br>M.Eng.
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Banyai, William Charles. "Optical nonlinearities in semiconductor doped glass channel waveguides." Diss., The University of Arizona, 1988. http://hdl.handle.net/10150/184505.

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The nonlinear optical properties of a semiconductor-doped glass (SDG) channel waveguide were measured on a picosecond time-scale; namely, fluence-dependent changes in the absorption and the refractive index as well as the relaxation time of the nonlinearity. Slower, thermally-induced changes in the refractive index were also observed. The saturation of the changes in the absorption and the refractive index with increasing optical fluence is explained using a plasma model with bandfilling as the dominant mechanism. The fast relaxation time of the excited electron-hole plasma (20 ps) is explaine
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Sundararajan, Abhishek. "A STUDY ON ATOMICALLY THIN ULTRA SHORT CONDUCTING CHANNELS, BREAKDOWN, AND ENVIRONMENTAL EFFECTS." UKnowledge, 2015. http://uknowledge.uky.edu/physastron_etds/27.

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We have developed a novel method of producing ultra-short channel graphene field effect devices on SiO2 substrates and have studied their electrical transport properties. A nonlinear current behavior is observed coupled with a quasi-saturation effect. An analytical model is developed to explain this behavior using ballistic transport, where the charge carriers experience minimal scattering. We also observe multilevel resistive switching after the device is electrically stressed. In addition, we have studied the evolution of the electrical transport properties of few-layer graphene during elect
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Shin, Nara [Verfasser], Karl [Gutachter] Leo, Stefan [Gutachter] Mannsfeld, and Sebastian [Gutachter] Reineke. "Enhancement of n-channel Organic Field-Effect Transistor Performance through Surface Doping and Modification of the Gate Oxide by Aminosilanes / Nara Shin ; Gutachter: Karl Leo, Stefan Mannsfeld, Sebastian Reineke." Dresden : Technische Universität Dresden, 2019. http://d-nb.info/1230578196/34.

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Lemoigne, Pascal. "Simulation de la variabilité du transistor MOS." Thesis, Aix-Marseille 1, 2011. http://www.theses.fr/2011AIX10214/document.

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L’augmentation de la densité d’intégration des circuits intégrés nous a amené à étudier, dans le cadre du développement de la technologie CMOS 45 nm, les sources de variabilité inhérentes aux procédés de fabrication utilisés pour ce nœud technologique, et à en déterminer les composantes principales,dans le but ultime de permettre la simulation précise de l’impact de la variabilité technologique à la fois au niveau transistor et circuit. Après un état de l’art des sources de variabilité du transistor MOS et des moyens de simulation associés,ce travail s'est orienté sur les fluctuations d'un fac
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Honoré, Jean-Charles. "Contribution à l'optimisation d'architectures de transistors MOS fortement submicroniques." Grenoble INPG, 1994. http://www.theses.fr/1994INPG0168.

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Ce memoire est consacre a l'optimisation de transistors fortement submicroniques. Apres avoir expose les effets physiques limitant la reduction des dimensions, l'analyse des differentes architectures de transistors en concurrence nous a permis de degager celles offrant le meilleur compromis entre la simplicite de realisation et les performances les plus elevees. La caracterisation detaillee des differentes variantes technologiques (canal, drain, oxyde de grille) des transistors cmos 0,25 m realises dans le cadre de cette etude a permis de definir des points de fonctionnement pour une future fi
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Benistant, Francis. "Études d'architectures NMOS 0,10 µm réalisées à partir d'implantations d'ions lourds." Grenoble INPG, 1996. http://www.theses.fr/1996INPG0048.

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La realisation de transistors mos de longueur de grille 0,10 m se heurte aux effets de canal court. Afin de conserver un comportement identique a celui d'un transistor a canal long, il est necessaire de reduire ces effets de canal court. Cette reduction passe par l'optimisation du profil de dopage dans le canal, qui doit etre retrograde. Un tel profil de dopage est obtenu par implantation d'ions de masse atomique beaucoup plus grande que le bore. Ainsi, l'indium et le gallium ont ete utilises pour doper le canal. Dans une premiere partie, l'implantation, la diffusion et l'activation de ces imp
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Szelag, Bertrand. "Étude des propriétés physiques et electriques de transistors mos fortement submicroniques." Grenoble INPG, 1999. http://www.theses.fr/1999INPG0022.

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La reduction des dimensions des transistors mos fait apparaitre des effets nefastes au bon fonctionnement des composants electroniques. L'objectif de ce travail de these est d'etudier les proprietes physiques et electriques des mosfets fortement submicroniques. Les longueurs de grille minimum utilisees au cours de cette etude sont de 75nm. Dans le premier chapitre, nous rappelons les principes de fonctionnement des transistors mos en introduisant les effets lies a la reduction des dimensions. Le second chapitre est entierement dedie aux effets de canaux courts. La tension de seuil est etudiee
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Brut, Hugues. "Contribution à la modélisation et à l'extraction des paramètres de tension de seuil, de résistance série et de réduction de longueur dans les transistors MOS submicroniques." Grenoble INPG, 1996. http://www.theses.fr/1996INPG0192.

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La conception des circuits integres a l'aide de simulateurs de type spice, necessite l'elaboration de modeles physiques, precis et simples. Pour cela, une bonne comprehension du comportement des dispositifs est indispensable. Par ailleurs la reduction constante des dimensions de ces dispositifs entraine l'apparition de nouveaux phenomenes physiques qu'il est primordial d'isoler et de caracteriser d'un point de vue experimental, afin d'en faire une modelisation aussi proche que possible de la realite. C'est dans ce cadre de recherche que s'inscrit ce memoire. Les dispositifs etudies ici sont le
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Fu-Min, Wang, and 王富民. "Investigation of AlGaN/GaN Doping-Channel High Electron Mobility Transistors." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/75941597127919252758.

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碩士<br>國立高雄師範大學<br>電子工程學系<br>103<br>Investigation of AlGaN/GaN Doping-Channel High Electron Mobility Transistors Fu-Min Wang* Jung-Hui Tsai** Department of Electronics, National Kaohsiung Normal University, Kaohsiung, Taiwan, R.O.C Abstract In this dissertation, we will fabricate and investigate the impact of doping channel on the AlGaN/GaN doping-channel high electron mobility transistors, and the influence of doped thickness on AlGaN/GaN doping-channel high electron mobility transistors will be included. The structures were designed as follows: (1) AlGaN/GaN doping-channel high e
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Book chapters on the topic "Inhomogenous doping of channel"

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Hatakeyama, Tetsuo, Takatoshi Watanabe, Junji Senzaki, et al. "Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping." In Materials Science Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.829.

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Datta, Emona, Avik Chattopadhyay, and Abhijit Mallik. "Dependence of Analog Performance and Linearity with Channel Doping Concentration for an InGaAs MOSFET." In Springer Proceedings in Physics. Springer Nature Singapore, 2024. http://dx.doi.org/10.1007/978-981-97-1571-8_5.

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Baidya, Achinta, Rajesh Saha, Jayendra Kumar, Sadhan Gope, and Chaitali Koley. "Effect of Channel Doping Variation on Electrostatic Characteristics of 3D Double Gate Junctionless Transistor." In Algorithms for Intelligent Systems. Springer Singapore, 2021. http://dx.doi.org/10.1007/978-981-16-2109-3_45.

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Bhattacharya, Arkaprio, Ananya Barman, Trina Dutta, and Swagata Bhattacherjee. "Investigation of Channel Doping Effects on High-Frequency Noise for Trench Double Gate JLFETs." In Springer Proceedings in Physics. Springer Nature Switzerland, 2024. https://doi.org/10.1007/978-3-031-69146-1_6.

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Joseph, Jose, and Rajendra Patrikar. "Impact of Fin Width and Graded Channel Doping on the Performance of 22nm SOI FinFET." In Communications in Computer and Information Science. Springer Berlin Heidelberg, 2013. http://dx.doi.org/10.1007/978-3-642-42024-5_19.

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Singh, Prabhat, and Dharmendra Singh Yadav. "Analysis of Channel Doping Variation on Transfer Characteristics to High-Frequency Performance of F-TFET." In Tunneling Field Effect Transistors. CRC Press, 2023. http://dx.doi.org/10.1201/9781003327035-10.

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Kumar, Sanjay, Ekta Goel, Gopal Rawat, et al. "Threshold Voltage Modeling of Short-Channel DG MOSFETs with Non-Uniform Doping in the Vertical Direction." In Physics of Semiconductor Devices. Springer International Publishing, 2014. http://dx.doi.org/10.1007/978-3-319-03002-9_66.

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Pérez-Tomás, A., M. R. Jennings, P. A. Mawby, et al. "SiC MOSFET Channel Mobility Dependence on Substrate Doping and Temperature Considering High Density of Interface Traps." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.835.

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Zhang, Q., C. Zheng, K. Sagoe-Crentsil, and W. Duan. "Transfer and Substrate Effects on 2D Materials for Their Sensing and Energy Applications in Civil Engineering." In Lecture Notes in Civil Engineering. Springer Nature Singapore, 2023. http://dx.doi.org/10.1007/978-981-99-3330-3_42.

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AbstractThe recent emergence of two-dimensional (2D) materials such as graphene and transition metal dichalcogenides (TMDs) of the family (Mo, W)(S, Se)2 has attracted interest from a broad range of engineering applications, including advanced sensing and energy harvesting and conservation, because of their distinctive properties. However, it is critical important to achieve intact delamination and transfer of these atomically thin materials, as well as to understand the effects of the target substrates on their optical and electronic properties. Therefore, we developed and compared techniques for transferring as-grown WS2 crystals to arbitrary substrates. Polystyrene-assisted wet transfer can realize improved preservation of monolayer WS2 crystals than the commonly used poly(methyl methacrylate) (PMMA)-assisted wet transfer method, due to minimal chemical etching involved in the 2D material delamination process. The intercalation of alkali ions in the PMMA-based transfer method induces chemical doping over the transferred 2D crystals, leading to the formation of trions. Moreover, the edges of the crystals on hydrophilic substrates, such as sapphire or SiO2/Si, are subject to ambient water intercalation, which locally affects the photoluminescence behavior of the monolayer WS2 by doping and changing of the dielectric environment. This non-uniform optical behavior is absent when the crystal is transferred onto a hydrophobic substrate through which ambient water cannot penetrate. These results have important implications for the choice of target substrate and transfer method adopted for 2D TMD-based applications such as next-generation strain sensing, photodetectors, gas sensing, bio sensing, solar energy harvesting and radiative cooling in which uniform behavior of the channel material is required.
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Kang, In Ho, Wook Bahng, Sang Cheol Kim, Sung Jae Joo, and Nam Kyun Kim. "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations." In Materials Science Forum. Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/0-87849-442-1.823.

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Conference papers on the topic "Inhomogenous doping of channel"

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Bi, Ran, Haoran Zhao, Mingmin Shi, et al. "Vertical Channel Gate-All-Around(VCG) CMOS Transistors with MBE in-Situ Doping Channel and TiN/HfO2 Gate Stacks." In 2025 9th IEEE Electron Devices Technology & Manufacturing Conference (EDTM). IEEE, 2025. https://doi.org/10.1109/edtm61175.2025.11040185.

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Dong, Jie, Ling Yang, Meng Zhang, Qian Yu, Hao Lu, and Bin Hou. "The DC and RF Performance by Fe Doping Tail of AlGaN/GaN HEMTs with Different GaN channel layer thicknesses." In 2024 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT). IEEE, 2024. https://doi.org/10.1109/rfit60557.2024.10812477.

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Kador, L. "Electric-Field Effects on Hole Spectra in Doped Polymers: A Step towards Two-Dimensional Optical Spectroscopy." In Persistent Spectral Hole Burning: Science and Applications. Optica Publishing Group, 1991. http://dx.doi.org/10.1364/pshb.1991.thd4.

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Optical absorption bands of organic dye molecules or inorganic ions in condensed matter are affected by inhomogeneous broadening [1] and are thus usually much broader than the corresponding homogeneous lines. In disordered systems, the difference can amount to several orders of magnitude at low temperatures. In order to detect the effects of external perturbations such as hydrostatic pressure or electric fields on an inhomogeneous band, the perturbations must therefore have very large magnitudes. The sensitivity can be greatly enhanced by investigating the changes of hole-burning spectra cause
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Lin, C. H., R. Kambhampati, R. J. Miller, et al. "Channel doping impact on FinFETs for 22nm and beyond." In 2012 IEEE Symposium on VLSI Technology. IEEE, 2012. http://dx.doi.org/10.1109/vlsit.2012.6242438.

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Huang, Jun Z., Pengyu Long, Michael Povolotskyi, Mark J. W. Rodwell, and Gerhard Klimeck. "Exploring channel doping designs for high-performance tunneling FETs." In 2016 74th Annual Device Research Conference (DRC). IEEE, 2016. http://dx.doi.org/10.1109/drc.2016.7548456.

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Tachi, K., N. Vulliet, S. Barraud, et al. "3D source/drain doping optimization in Multi-Channel MOSFET." In ESSDERC 2010 - 40th European Solid State Device Research Conference. IEEE, 2010. http://dx.doi.org/10.1109/essderc.2010.5618209.

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Liu, Jinning, Sandeep Mehta, Sonu L. Daryanani, and Che-Hoo Ng. "Material study of indium implant under channel doping conditions." In Microelectronic Manufacturing, edited by David Burnett, Dirk Wristers, and Toshiaki Tsuchiya. SPIE, 1998. http://dx.doi.org/10.1117/12.323967.

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Padovese, Jose A., Leonardo S. Yojo, Ricardo C. Rangel, Katia R. A. Sasaki, and Joao A. Martino. "Channel Doping Concentration Influence on BESOI MOSFET Light Sensor." In 2019 34th Symposium on Microelectronics Technology and Devices (SBMicro). IEEE, 2019. http://dx.doi.org/10.1109/sbmicro.2019.8919338.

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Tanaka, M., N. Tokida, T. Okagaki, M. Miura-Mattausch, W. Hansch, and H. J. Mattausch. "High performance of short-channel MOSFETs due to an elevated central-channel doping." In the 2000 conference. ACM Press, 2000. http://dx.doi.org/10.1145/368434.368682.

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Dubey, Shashank, and Pravin Kondekar. "Doping dependent stacked channel FinFET for multiple threshold voltage applications." In 2016 3rd International Conference on Emerging Electronics (ICEE). IEEE, 2016. http://dx.doi.org/10.1109/icemelec.2016.8074563.

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