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Journal articles on the topic 'Inhomogenous doping of channel'

Author: Grafiati

Published: 3 June 2025

Last updated: 20 July 2025

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1

Saraniti, M., G. Zandler, G. Formicone, and S. Goodnick. "Cellular Automata Studies of Vertical Silicon Devices." VLSI Design 8, no. 1-4 (1998): 111–15. http://dx.doi.org/10.1155/1998/89897.

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We present systematic theoretical Cellular Automata (CA) studies of a novel nanometer scale Si device, namely vertically grown Metal Oxide Field Effect Transistors (MOSFET) with channel lengths between 65 and 120 nm. The CA simulations predict drain characteristics and output conductance as a function of gate length. The excellent agreement with available experimental data indicates a high quality oxide/semiconductor interface. Impact ionization is shown to be of minor importance. For inhomogeneous p-doping profiles along the channel, significantly improved drain current saturation is predicted.

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2

Pankratov, Evgeny L., and Elena A. Bulaeva. "An analytical approach for analysis and optimization of formation of field-effect heterotransistors." Multidiscipline Modeling in Materials and Structures 12, no. 4 (2016): 578–604. http://dx.doi.org/10.1108/mmms-09-2015-0057.

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Purpose The purpose of this paper is to analyze and optimize the formation of field-effect heterotransistors using analytical approach. The approach makes it possible to analyze mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure. The optimization makes it possible to decrease dimensions of the heterotransistors and to increase speed of transport of charge carriers during functioning of the transistors. Design/methodology/approach The authors introduce an analytical approach for analysis of mass and heat transport, which makes it possible to take into account at one time varying in space and time parameters of the transports (diffusion coefficient, heat conduction coefficient, etc.) and nonlinearity of processes. The approach enables analysis of mass and heat transport in a multilayer structure without cross-linking of solutions on interfaces between layers of the multilayer structure and optimises the technological process. The optimization means it is possible to decrease dimensions of field-effect heterotransistors. Findings In this paper the authors introduce an approach to manufacture a field-effect heterotransistor with inhomogeneous doping of channel. Some recommendations to optimize technological process to manufacture more compact distribution of concentration of dopant have been formulated. Originality/value The results are original and the paper provides an approach to the manufacture of a field-effect heterotransistor.

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3

Lin, Jinfeng, Qiling Lu, Xiao Wu, et al. "In situ boost and reversible modulation of dual-mode photoluminescence under an electric field in a tape-casting-based Er-doped K0.5Na0.5NbO3 laminar ceramic." Journal of Materials Chemistry C 7, no. 26 (2019): 7885–92. http://dx.doi.org/10.1039/c9tc01356c.

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4

RÖHLER, J. "THE BULGE IN THE BASAL PLANE AREA OF CUPRATE SUPERCONDUCTORS." International Journal of Modern Physics B 19, no. 01n03 (2005): 255–57. http://dx.doi.org/10.1142/s0217979205028359.

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The bulge in the doping dependence of the basal plane area of cuprate superconductors is shown to be an effect of the particular inhomogenous electronic structure created by the dense packing of paired self-protected singlets (PSPS) in CuO 2 lattices.

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5

Wei, Wei, A. V. Nagasekhar, Guang Chen, Yip Tick-Hon, and Kun Xia Wei. "Origin of inhomogenous behavior during equal channel angular pressing." Scripta Materialia 54, no. 11 (2006): 1865–69. http://dx.doi.org/10.1016/j.scriptamat.2006.02.026.

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6

Zhang, Xiao-Bo, Xin Qiao, Li-Hong Cheng, Ai-Xia Zhang, and Ju-Kui Xue. "Coherent control of the THz radiation in an inhomogenous plasma channel." Journal of Physics: Conference Series 875 (July 2017): 022037. http://dx.doi.org/10.1088/1742-6596/875/3/022037.

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7

Yao, Bing, Rongsheng Li, Chenxi Zhang, et al. "Tuning the morphology of 2D transition metal chalcogenides via oxidizing conditions." Journal of Physics: Condensed Matter 34, no. 19 (2022): 195001. http://dx.doi.org/10.1088/1361-648x/ac54e5.

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Abstract Two-dimensional transition metal chalcogenides (TMCs) are emerging as an intriguing platform to realize nascent properties in condensed matter physics, materials science and device engineering. Controllable growing of TMCs becomes increasingly important, especially for the layer number, doping, and morphology. Here, we successfully tune the morphology of MoS2, MoSe2, WS2 and WSe2, from homogenous films to individual single crystalline grains only via changing the oxidizing growth conditions. The oxidization degrees are determined by the oxygen that adsorbed on substrates and the oxygen concentrations in reaction gas together. We find the homogenous films are easily formed under the reductive conditions, triangular grains prefer the weak oxidizing conditions, and medium oxidizing conditions bring in dendritic grains with higher oxygen doping and inhomogenous photoluminescence intensities from edge to interior regions shown in the dendritic grains. These growth rules under different oxidizing conditions are easily generalized to other TMCs, which also show potential for growing specific TMCs with designed oxygen doping levels.

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8

Ye, Shuangli, Limei Klar, Andreas Ney, et al. "Effects of the Inhomogenous Co Doping on the Magnetoresistance of Zn1−xCoxO Epitaxial Films." Journal of Nanoscience and Nanotechnology 12, no. 2 (2012): 1054–58. http://dx.doi.org/10.1166/jnn.2012.4266.

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9

Bernardi, Heide H., Hugo Ricardo Zschommler Sandim, Bert Verlinden, and Dierk Raabe. "Recrystallization of Niobium Single Crystals Deformed by ECAE." Materials Science Forum 558-559 (October 2007): 125–30. http://dx.doi.org/10.4028/www.scientific.net/msf.558-559.125.

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High-purity niobium single crystals were deformed by equal-channel angular extrusion (ECAE) at room temperature to an equivalent Von Mises strain of about 1.15. Deformed samples were annealed in vacuum from 500 to 800oC for 1 hour to investigate their microstructure evolution. The microstructure of deformed and annealed samples was characterized by scanning electron microscopy (SEM), electron backscatter diffraction (EBSD), and Vickers microhardness testing. The deformed structure after one ECAE pass is rather inhomogenous and consists of parallel sets of coarse shear bands whose spacing varies from one region to another in the cylindrical billet. the microstructure within the shear bands consists of elongated subgrains with sizes below 3 μm and lamellar boundaries. The remaining non-sheared regions display a coarser subgrain structure. Recrystallization is virtually absent in samples annealed at 500oC for 1 hour. Nucleation begins mostly within shear bands. The new grains with sizes ranging from 10 to 50 μm are arranged in clusters rather than being homogenously distributed. The recrystallized volume fraction also varies from one region to another indicating an inhomogenous distribution of stored energy. At 700oC, recrystallization is complete after annealing for 1 hour resulting in a structure with a mean grain size of about 100 μm.

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10

KUMARI, RITI, MANISH GOSWAMI, and B. R. SINGH. "THE IMPACT OF CHANNEL ENGINEERING ON SHORT CHANNEL BEHAVIOR OF NANO FIN-FETs." International Journal of Nanoscience 11, no. 02 (2012): 1250021. http://dx.doi.org/10.1142/s0219581x12500214.

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This short note presents the simulation result on the effect of channel engineering i.e., non-uniform channel doping on short channel effects (SCE) in nano Fin-FET devices using Silvaco TCAD tool. The nano Fin-FET structures were generated using DEVEDIT and the effect of channel doping concentration has been studied. The optimum doping concentration profile has been observed to considerably improve the SCE in general and drain induced barrier lowering (DIBL) in particular.

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11

Ejebjörk, Niclas, Herbert Zirath, Peder Bergman, Björn Magnusson, and Niklas Rorsman. "Optimization of SiC MESFET for High Power and High Frequency Applications." Materials Science Forum 679-680 (March 2011): 629–32. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.629.

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SiC MESFETs were scaled both laterally and vertically to optimize high frequency and high power performance. Two types of epi-stacks of SiC MESFETs were fabricated and measured. The first type has a doping of 3×1017 cm-3 in the channel and the second type has higher doping (5×1017 cm-3) in the channel. The higher doping allows the channel to be thinner for the same current density and therefore a reduction of the aspect ratio is possible. This could impede short channel effects. For the material with higher channel doping the maximum transconductance is 58 mS/mm. The maximum current gain frequency, fT, and maximum frequency of oscillation, fmax, is 9.8 GHz and 23.9 GHz, and 12.4 GHz and 28.2 GHz for the MESFET with lower doped channel and higher doping, respectively.

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12

N., M. Shehu G. Babaji M. H. Ali. "Exploring the Influence of Channel Doping Concentration on Short Channel Effects in Nanoscale Double-Gate FinFETs: A Comparative Study." Journal of Science and Technology Research 6, no. 1 (2024): 182–89. https://doi.org/10.5281/zenodo.10969362.

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<em>This work investigates the impact of channel doping concentration on short channel effects (SCEs) in different semiconductor materials using FinFETs. The work examines Gallium Arsenide (GaAs), Gallium Antimonide (GaSb), Gallium Nitride (GaN), and Silicon (Si) FinFETs in the PADRE simulator environment which is a powerful component from Multigate Field Effect Transistor (MUGFET) tool readily available at nanoHUB.org, analyzing performance metrics such as Drain Induced Barrier Lowering (DIBL), Subthreshold Swing (SS), Threshold Voltage roll-off, transconductance as well as on-current. It is found that GaAs-FinFET exhibits lowest DIBL of 3.63 mV/V at low channel doping concentration, lowest SS of 64.37 mV/V at high channel doping concentration, and highest on-current of 2x 10^-4</em><em>A/μm   at low doping concentration, whereas GaN-FinFET exhibits highest transconductance of  1x 10 ^ -8 </em><em>S/μm at low channel doping concentration. However, GaSb FinFET displays lowest threshold voltage of 0.48 V at low doping concentration. The work concludes that low channel doping concentration plays a pivotal role in mitigating short channel effects leading to enhanced operational performance of FinFET devices. This finding provides valuable insight into improving FinFET design and channel material selection for a variety of semiconductor applications</em>

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13

Kumar, Abneesh, Atal Kumar, R. K. Saxena, and Suresh Patel. "To Study Effect on Current Due to Channel Doping Concentrations Variation." International Journal of Advance Research and Innovation 2, no. 3 (2014): 37–40. http://dx.doi.org/10.51976/ijari.231407.

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The aim of this simulation work is to study effect of channel doping concentration. The channel lies under the oxide layer of the MOSFET. The results obtained show that as channel doping concentration decreases threshold voltage decreases and good saturation region in I-V curve is obtained and the drain current increases. So the lower channel doping concentration provides better mobility and hence, less velocity saturation.

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14

Zhu, Renqiang, Huaxing Jiang, Chak Wah Tang, and Kei May Lau. "Vertical GaN trench MOSFETs with step-graded channel doping." Applied Physics Letters 120, no. 24 (2022): 242104. http://dx.doi.org/10.1063/5.0088251.

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Vertical GaN trench MOSFETs have shown enormous potential for efficient power switching applications. Low ON-resistance ( RON) to minimize power loss, high output current ( ION) to maximize driving capability, and large threshold voltage ( Vth) to avoid false turn-on are highly desirable. This work reports vertical GaN trench MOSFETs with step-graded channel doping. Conventional devices with uniform channel doping were involved for comparison. The experimental results show that step-graded channel doping can achieve an improved trade-off between ION, RON, and Vth than uniform channel doping.

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15

Huddleston, Lucas, and Shamus Mcnamara. "Transfer Doping in Diamond for Channel Doping and Electrical Contacts." IEEE Transactions on Electron Devices 68, no. 9 (2021): 4231–36. http://dx.doi.org/10.1109/ted.2021.3100017.

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16

Abid, Z., A. Gopinath, B. Meskoob, and S. Prasad. "GaAs MESFETs with channel-doping variations." Solid-State Electronics 34, no. 12 (1991): 1427–32. http://dx.doi.org/10.1016/0038-1101(91)90040-6.

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17

Hatakeyama, Tetsuo, Takatoshi Watanabe, Junji Senzaki, et al. "Investigation of Degradation of Inversion Channel Mobility of SiC MOSFET due to the Increase of Channel Doping." Materials Science Forum 483-485 (May 2005): 829–32. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.829.

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This paper reports on the degradation of inversion channel mobility of SiC MOSFET caused by the increase of channel doping. SiC MOSFETs were fabricated on three wafers, the doping concentrations of the epitaxial layer of which were 16 10 2× cm-3 (sample A), 17 10 2× cm-3 (sample B) and 17 10 4× cm-3 (sample C). The field effect mobility sharply decreases as the doping concentration increases. Hall mobility measurements have been done to investigate the degradation of the mobility due to doping. The measurement of sample A shows that, as a consequence of the decrease of the free carrier density due to MOS interface traps, the Hall mobility is as much as a factor of ten higher than the field effect mobility. In contrast, in regard to the measurement of sample B and sample C, we encountered unstable Hall voltage and could not obtain reproducible results. This implies that such high-density traps are generated that a channel disappears in the higher-doping samples.

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18

Pramanik, Md Bappi, Moniruzzaman, Ahsanul Karim, and Aminur Islam Tonmoy. "Doping Effect of Pocket Implementation in MOSFET." European Journal of Engineering and Technology Research 10, no. 2 (2025): 9–15. https://doi.org/10.24018/ejeng.2025.10.2.3244.

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This doping may be critical in MOSFET technology which is among the most commonly used technologies in the manufacturing of electronic gadgets. Doping affects the profile of an MOSFET gate length, channel length and pocket concentration without which the functionality of an electronic device cannot be overemphasise . The specific goals of this thesis are to propose in-pocket designs for Si, Ge and GaAs. Next, we will discuss parameters such as gate length and channel length threshold voltage, pocket definitions and leakage current in semiconductors. This work requires the understanding and predicting the electronic properties of doped NMOSFET and their responses to different stimuli. This thesis will thus provide good insight into the effects of doping on the electronic attributes of semiconductors. The observations recorded in this thesis include on-gate length, channel length, pocket concentration, threshold voltage, short channel impact, pocket implementation, and leakage current. Analyzing the outcomes in the controlled experiment, the authors stated the dependence between threshold voltage and atomic density, leakage current and atomic density, short channel effects and atomic density, threshold voltage and leakage current with short channel effects and the ratio between channel length and gate length.

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19

Albrecht, Matthaeus, Tobias Erlbacher, Anton J. Bauer, and Lothar Frey. "Potential of 4H-SiC CMOS for High Temperature Applications Using Advanced Lateral p-MOSFETs." Materials Science Forum 858 (May 2016): 821–24. http://dx.doi.org/10.4028/www.scientific.net/msf.858.821.

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In this work, the impact of the n-well doping concentration on the channel mobility and threshold voltage of p-MOSFETs and their applications in CMOS-devices is evaluated. For this purpose lateral p-channel MOSFETs with different channel lengths (L = 800 μm, 10 μm, 5 μm, and 3 μm) and doping concentrations (ND = 1015 cm-3 and 8·1015 cm-3) were fabricated and the respective field-effect mobility was extracted from the transfer-characteristics. Comparable to n-MOSFETs the mobility of p-MOSFETs was found to be the highest for the lowest doping concentration in the channel and the absolute value of the threshold voltage increases with increasing doping concentration [4]. To investigate its suitability for CMOS applications, inverters with different doping concentrations for n-MOSFET (NA = 1015 cm-3 and 1017 cm-3) und p-MOSFET (ND = 1015 cm-3 and 8·1015 cm-3) were built. For logic levels of 0 V and 10 V, the voltage transfer characteristic with the highest input ranges was obtained for a low p-MOSFET and a high n-MOSFET doping concentration. The lowest propagation delay time could be achieved with a low p-MOSFET and a low n-MOSFET doping concentration. At room temperature as well as at high temperatures T = 573 K the drain current of p-MOSFETs with channel lengths below 3 μm is hampered by the series resistance of the source and drain region which limits the performance of CMOS devices.

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20

Bonaldo, Stefano, Serena Mattiazzo, Marta Bagatin, Alessandro Paccagnella, Giovanni Margutti, and Simone Gerardin. "Influence of Bulk Doping and Halos on the TID Response of I/O and Core 150 nm nMOSFETs." Electronics 12, no. 3 (2023): 543. http://dx.doi.org/10.3390/electronics12030543.

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The total ionizing dose sensitivity of planar 150 nm CMOS technology is evaluated by measuring the DC responses of nMOSFETs at several irradiation steps up to 125 krad(SiO2). Different TID sensitivities are measured for transistors built with different channel dimensions and operating voltages (I/O and core). The experimental results evidence strong relations between TID sensitivity and the doping profiles in the channel. I/O transistors have the highest TID sensitivity due to their thicker gate oxide and lower bulk doping compared with core devices. In general, narrow-channel devices have the worst degradation with negative threshold voltage shifts, transconductance variations and increased subthreshold leakage currents, suggesting charge trapping in shallow trench isolation (STI). The enhanced TID tolerance of short-channel core devices is most likely related to the increased channel doping induced by the overlapping of halo implantations. Finally, transistors fabricated for low-leakage applications exhibit near insensitivity to TID due to higher bulk doping used during the fabrication to minimize the drain-to-source leakage current.

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21

Goswami, Yogesh, Pranav Asthana, Shibir Basak, and Bahniman Ghosh. "Junctionless Tunnel Field Effect Transistor with Nonuniform Doping." International Journal of Nanoscience 14, no. 03 (2015): 1450025. http://dx.doi.org/10.1142/s0219581x14500252.

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In this paper, the dc performance of a double gate Junctionless Tunnel Field Effect Transistor (DG-JLTFET) has been further enhanced with the implementation of double sided nonuniform Gaussian doping in the channel. The device has been simulated for different channel materials such as Si and various III-V compounds like Gallium Arsenide, Aluminium Indium Arsenide and Aluminium Indium Antimonide. It is shown that Gaussian doped channel Junctionless Tunnel Field Effect Transistor purveys higher ION/IOFF ratio, lower threshold voltage and sub-threshold slope and also offers better short channel performance as compared to JLTFET with uniformly doped channel.

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22

Wu, Chien-Hung, Po-Tsun Liu, Wen-Chun Chung, Kow-Ming Chang, Der-Hsien Lien, and Cheng Liu. "Effects of Mg Doping on Double Channel Layer Atmospheric Pressure-Plasma Enhanced Chemical Vapor Deposition Fabricated Amorphous InGaZnO Thin Film Transistors." Journal of Nanoelectronics and Optoelectronics 16, no. 9 (2021): 1412–16. http://dx.doi.org/10.1166/jno.2021.3086.

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Amorphous IGZO (a-IGZO) has been proved to be a suitable material for the channel layer in a thin film transistor, showing high mobility even in low temperature fabrication, device electrical characteristic exceeds a-Si or other metal oxide semiconductor materials. In this work, bottom gate top TFT is fabricated. With Atmosphere Pressure-PECVD (AP-PECVD), a-IGZO is deposited as device channel layer. A double channel layer is tested with Mg doping added in the bottom layer. This work focus on how the Mg doping concentration in the bottom layer affects device electrical characteristic. The result for best device characteristics is 5% Mg doping, showing highest mobility, lowest threshold voltage, and nearly 108 in Ion/Ioff. A suitable doping concentration can lower interface defect density and affect grain size, which both leads to a better device characteristics. However, device characteristics show sign of degradation with excess doping concentration.

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23

Pak, Sangyeon, Jiwon Son, Taehun Kim, et al. "Facile one-pot iodine gas phase doping on 2D MoS₂/CuS FET at room temperature." Nanotechnology 34, no. 1 (2022): 015702. http://dx.doi.org/10.1088/1361-6528/ac952f.

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Abstract Electronic devices composed of semiconducting two-dimensional (2D) materials and ultrathin 2D metallic electrode materials, accompanying synergistic interactions and extraordinary properties, are becoming highly promising for future flexible and transparent electronic and optoelectronic device applications. Unlike devices with bulk metal electrode and 2D channel materials, devices with ultrathin 2D electrode and 2D channel are susceptible to chemical reactions in both channel and electrode surface due to the high surface to volume ratio of the 2D structures. However, so far, the effect of doping was primary concerned on the channel component, and there is lack of understanding in terms of how to modulate electrical properties of devices by engineering electrical properties of both the metallic electrode and the semiconducting channel. Here, we propose the novel, one-pot doping of the field-effect transistor (FET) based on 2D molybdenum disulfide (MoS2) channel and ultrathin copper sulfide (CuS) electrodes under mild iodine gas environment at room temperature, which simultaneously modulates electrical properties of the 2D MoS2 channel and 2D CuS electrode in a facile and cost-effective way. After one-pot iodine doping, effective p-type doping of the channel and electrode was observed, which was shown through decreased off current level, improved I on/I off ratio and subthreshold swing value. Our results open up possibility for effectively and conveniently modulating electrical properties of FETs made of various 2D semiconductors and ultrathin contact materials without causing any detrimental damage.

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24

Ali, Asif, So-Young Kim, Muhammad Hussain, et al. "Deep-Ultraviolet (DUV)-Induced Doping in Single Channel Graphene for Pn-Junction." Nanomaterials 11, no. 11 (2021): 3003. http://dx.doi.org/10.3390/nano11113003.

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The electronic properties of single-layer, CVD-grown graphene were modulated by deep ultraviolet (DUV) light irradiation in different radiation environments. The graphene field-effect transistors (GFETs), exposed to DUV in air and pure O2, exhibited p-type doping behavior, whereas those exposed in vacuum and pure N2 gas showed n-type doping. The degree of doping increased with DUV exposure time. However, n-type doping by DUV in vacuum reached saturation after 60 min of DUV irradiation. The p-type doping by DUV in air was observed to be quite stable over a long period in a laboratory environment and at higher temperatures, with little change in charge carrier mobility. The p-doping in pure O2 showed ~15% de-doping over 4 months. The n-type doping in pure N2 exhibited a high doping effect but was highly unstable over time in a laboratory environment, with very marked de-doping towards a pristine condition. A lateral pn-junction of graphene was successfully implemented by controlling the radiation environment of the DUV. First, graphene was doped to n-type by DUV in vacuum. Then the n-type graphene was converted to p-type by exposure again to DUV in air. The n-type region of the pn-junction was protected from DUV by a thick double-coated PMMA layer. The photocurrent response as a function of Vg was investigated to study possible applications in optoelectronics.

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25

Takeda, Hironori, Takuji Hosoi, Takayoshi Shimura, and Heiji Watanabe. "Evaluation of the Impact of Al Atoms on SiO₂/ SiC Interface Property by Using 4H-SiC n⁺-Channel Junctionless MOSFET." Materials Science Forum 963 (July 2019): 171–74. http://dx.doi.org/10.4028/www.scientific.net/msf.963.171.

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To investigate the impact of Al atoms on channel mobility at SiO2/SiC interface, we fabricated the junctionless metal-oxide-semiconductor field-effect transistors (MOSFETs), in which thin n+-SiC epitaxial layers with and without Al+ ion implantation were used as a channel, and compared their electrical characteristics. The effective mobility (meff) of n+-channel junctionless MOSFET without Al doping was estimated to be 14.9 cm2/Vs, which is higher than inversion-mode MOSFET fabricated with the same gate oxidation condition (3.1 cm2/Vs). The meff values of the MOSFETs with low Al doping concentration (5´1017 and 1´1018 cm-3) were almost the same as that of Al-free MOSFET, and the device with the highest Al doping (5´1018 cm-3) exhibited slight mobility degradation of about 15% compared to the other devices. Hall mobility in thick n+ layer with the highest Al doping was also slightly degraded, suggesting that Al atoms in the channel are not the major cause of degraded SiO2/SiC interface property.

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26

Пашковский, А. Б., та С. А. Богданов. "Локализация электронов верхних долин в узкозонном канале --- возможный дополнительный механизм увеличения тока в DA-DpHEMT". Письма в журнал технической физики 45, № 20 (2019): 11. http://dx.doi.org/10.21883/pjtf.2019.20.48385.17925.

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Abstract: The theoretical estimation of the effect of electron localization in the upper valleys in the narrow-band channel of transistor heterostructures AlxGa1–xAs-GaAs with two-sided doping on the value оf drift velocity overshoot is carried out. It is shown that for transistor heterostructures with donor-acceptor doping, in which the proportion of electrons transferred from the narrow-band channel to the wide-band material is less than in conventional structures, in some cases, the drift velocity increase can reach 15 % due to the localization of electrons in the upper valleys in the narrow-band channel. The studied effect can be an additional mechanism for increasing the current in transistors based on heterostructures with donor-acceptor doping.

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27

Strenger, Christian, Viktoryia Uhnevionak, Vincent Mortet, et al. "Systematic Analysis of the High- and Low-Field Channel Mobility in Lateral 4H-SiC MOSFETs." Materials Science Forum 778-780 (February 2014): 583–86. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.583.

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In this work, we investigate the impact of Al-implantation into n-MOSFET channel regions together with its p-doping concentration upon the mobility limiting scattering mechanisms in the channel. For this purpose, a study of the interface trap density, interface trapped charge density, field-effect mobility, and Hall mobility is carried out for normally-off n-MOSFETs with different doping profiles and concentrations in the channel region. The trend of the field-effect and the Hall mobility as well as the differences thereof will be discussed. Based on the determined mobilities in the range from 11.9 cm2/Vs to 92.4 cm2/Vs, it will be shown that for p-doping concentrations above 5·1016 cm-3 Coulomb scattering is the dominant scattering mechanism for both, low- and high-field mobility. In contrast, for p-doping concentrations below 5·1016, cm-3 further scattering mechanisms will be considered that may account for the observed mobility trend at high electric fields.

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28

Baek, Ki-Ju, Jun-Kyu Kim, Yeong-Seuk Kim, and Kee-Yeol Na. "Device Optimization of N-Channel MOSFETs with Lateral Asymmetric Channel Doping Profiles." Transactions on Electrical and Electronic Materials 11, no. 1 (2010): 15–19. http://dx.doi.org/10.4313/teem.2010.11.1.015.

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29

K.Ullah, S.Riaz M.Habib F.Abbas S.Naseem I.Shah A.Bukhtiar. "Effect of Channel Doping Concentration on the Impact ionization of nChannel Fully Depleted SOI MOSFET." International Journal of Engineering Works 2, no. 2 (2015): 18–22. https://doi.org/10.5281/zenodo.15756.

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Impact ionization in fully depleted (FD) Silicon On Insulator (SOI) n-Channel MOSFET is investigated as a function of the doping concentration. We have found that impact ionization increases with the decrease in the doping concentration and vice versa. Simulation results obtained from Sentaurus TCAD with the higher doping concentration can control the threshold voltage (Vth). Furthermore we have examined the effect of doping concentration on the transconductance (gm) and have observed that transconductance is inversely proportional of the doping concentration.

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30

Sun, Hao, and PuiTo Lai. "Effect of Gate-Electrode/Gate-Dielectric Interlayer on Gate Screening of Remote Phonon Scattering in InGaZnO Thin-Film Transistor with High-k Gate Dielectric." ECS Meeting Abstracts MA2024-02, no. 34 (2024): 2384. https://doi.org/10.1149/ma2024-02342384mtgabs.

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InGaZnO thin-film transistors with various SiO2 thicknesses (0, 3.5, 8.5, 18.8 nm) in double-layered gate dielectric (NdHfO/SiO2) and different gate doping concentrations (2.4×1015, 1.5×1018, 2.1×1019 /cm3) are fabricated to systematically study the influence of the SiO2 low-k interlayer on the remote phonon scattering (RPS) in the conduction channel originated from the NdHfO high-k layer. The performances of the TFTs show critical dependence on the SiO2 thickness and the gate doping concentration. On the one hand, the channel-carrier mobility increases with the rise of gate doping concentration because more plasmons formed by more gate-electrode holes produce a stronger gate screening effect to suppress the RPS on the channel carriers. On the other hand, the SiO2 interlayer between the gate electrode and the NdHfO layer separates the gate-electrode plasmons and the gate-dielectric phonons, thus weakening the gate screening effect, which is supported by decreasing carrier mobility with increasing SiO2 thickness. Furthermore, through comparison with counterparts without the SiO2 interlayer, the carrier-mobility increment with increasing gate doping concentration is found to decrease from 9.67 cm2V-1s-1/decade to 6.33 cm2V-1s-1/decade due to weakened gate screening effect caused by the insertion of a 19-nm SiO2 interlayer. In summary, the gate screening effect and the RPS-limited channel-carrier mobility can be enhanced by higher gate doping concentration, but reduced by thicker gate-electrode/gate-dielectric interlayer.

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31

Mondal, Partha, Bahniman Ghosh, and Punyasloka Bal. "Planar junctionless transistor with non-uniform channel doping." Applied Physics Letters 102, no. 13 (2013): 133505. http://dx.doi.org/10.1063/1.4801443.

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32

Lin, Alice L., Roy L. Maddox, and Jack E. Mee. "Channel doping profile of silicon‐on‐sapphire transistors." Journal of Applied Physics 57, no. 6 (1985): 2091–98. http://dx.doi.org/10.1063/1.334401.

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33

Kristoffel, N. "Doping created vibronic phonon softening channel in cuprates." Physica C: Superconductivity 377, no. 3 (2002): 277–81. http://dx.doi.org/10.1016/s0921-4534(01)01203-5.

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Décobert, J., G. Rondeau, H. Maher, et al. "Doping optimizations for InGaAs/InP composite channel HEMTs." Journal of Crystal Growth 195, no. 1-4 (1998): 681–86. http://dx.doi.org/10.1016/s0022-0248(98)00590-9.

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35

Mikami, Kyota, Keita Tachiki, Koji Ito, and Tsunenobu Kimoto. "Body doping dependence of field-effect mobility in both n- and p-channel 4H-SiC metal-oxide-semiconductor field-effect transistors with nitrided gate oxides." Applied Physics Express 15, no. 3 (2022): 036503. http://dx.doi.org/10.35848/1882-0786/ac516b.

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Abstract Both n- and p-channel SiC MOSFETs, the gate oxides of which were annealed in NO, with various body doping concentrations were fabricated. Despite the large difference in bulk mobility between electrons (1020 cm2 V−1 s−1) and holes (95 cm2 V−1 s−1), the maximum field-effect mobility in heavily-doped (∼5 × 1017 cm−3) MOSFETs was 10.3 cm2 V−1 s−1 for the n-channel and 7.5 cm2 V−1 s−1 for the p-channel devices. The measurements using body bias revealed that the field-effect mobility in both n- and p-channel SiC MOSFETs is dominated by the effective normal field rather than the body doping.

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36

Katakami, S., Makoto Ogata, Shuichi Ono, and Manabu Arai. "Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate." Materials Science Forum 556-557 (September 2007): 803–6. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.803.

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The electrical characteristics of a SiC-MESFET are affected by the channel structure characteristics, such as impurity density and thickness. MESFETs fabricated with ion implantation technique, can form thinner and higher doped channel layers than those fabricated with conventional epitaxial growth, thus improve RF characteristics of MESFETs. We calculated the doping profile of the channel layer for an ion implanted SiC-MESFET using a simulator and then fabricated a SiC-MESFET with the same doping profile as obtained from the simulation. The ion implanted SiC-MESFET operated successfully and had the same electrical characteristics as the epitaxial SiC-MESFET. We demonstrated the effectiveness of one-step implantation channel layer for the ion implanted SiC-MESFET.

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37

Han, Tao, Linshan Sun, Qirui Feng, et al. "The mechanism of photogenerated minority carrier movement in organic phototransistors." Journal of Materials Chemistry C 8, no. 35 (2020): 12284–90. http://dx.doi.org/10.1039/d0tc02698k.

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A continuous transmission channel of minority carrier forms under high concentration acceptor doping, leading to poor phototransistor performance. However, the minority carrier cannot move under low acceptor doping, promoting the device performance.

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38

Kang, In Ho, Wook Bahng, Sang Cheol Kim, Sung Jae Joo, and Nam Kyun Kim. "Numerical Investigation of the DC and RF Performances for a 4H-SiC Double Delta-Doped Channel MESFET Having Various Delta-Doping Concentrations." Materials Science Forum 556-557 (September 2007): 823–26. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.823.

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A double delta-doped channel 4H-SiC MESFET is proposed to kick out degradation of the DC and RF performances caused by the surface traps, by forming a quantum-well-like potential well and separating an effective channel from the surface. To obtain an optimum device structure, the DC and RF performances of double delta-doped channel MESFETs having various delta-doping concentrations but the same pinch-off voltage with that of conventional MESFET were also investigated. The SilvacoTM simulation results show that the double delta-doped channel MESFET achieved more improvement of the drain current, the cut-off frequency, and the maximum oscillation frequency for higher delta-doping concentration near the gate. In all cases, DC and RF performances for double delta-doped channel MESFETs are much improved than those of the conventional MESFET.

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39

Das, Namita, and Kaushik Chandra Deva Sarma. "Channel Potential Modelling of Surrounded Channel Junction Less Field Effect Transistor." Journal of Nanoelectronics and Optoelectronics 17, no. 2 (2022): 211–17. http://dx.doi.org/10.1166/jno.2022.3186.

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An analytical model for potential in channel region is obtained for a Surrounded channel junction-less field effect transistor. Two dimensional Poisson’s equation has been solved to obtain the mathematical potential modelling. The dependence of channel potential on gate voltage, gate oxide thickness, type of gate dielectric, doping concentration, channel length is shown. The model is fully analytical in nature and suitable for compact modelling. The potential model developed is compared with results obtained from TCAD numerical simulation results.

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40

Wang, Qun, Yuanyuan Fang, Hang Yin, and Jianjun Li. "Inhomogenous doping induced the imperfect self-assembly of nanocrystals for the synthesis of porous AgPb10BiTe12 nanosheets and their thermoelectric transport properties." Chemical Communications 51, no. 9 (2015): 1594–96. http://dx.doi.org/10.1039/c4cc07515c.

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For the first time, quaternary single-crystal-like porous AgPb<sub>10</sub>BiTe<sub>12</sub> nanosheets in two solid forms (solid solution and a Bi-rich region coexist) were achieved. A significant enhancement of thermoelectric performance was realized through nanoscale grain boundaries and macroscale porous structures.

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41

Gupta, R. S., C. Jagadish, G. S. Chilana, and G. P. Srivastava. "A method to determine surface doping and substrate doping profile of n-channel MOSFETs." Physica Status Solidi (a) 110, no. 2 (1988): 671–75. http://dx.doi.org/10.1002/pssa.2211100240.

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42

Noll, Stefan, Martin Rambach, Michael Grieb, Dick Scholten, Anton J. Bauer, and Lothar Frey. "Effect of Shallow n-Doping on Field Effect Mobility in p-Doped Channels of 4H-SiC MOS Field Effect Transistors." Materials Science Forum 778-780 (February 2014): 702–5. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.702.

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A high inversion channel mobility is a key parameter of normally off Silicon-Carbide MOS field effect power transistors. The mobility is limited by scattering centers at the interface between the semiconductor and the gate-oxide. In this work we investigate the mobility of lateral normally-off MOSFETs with different p-doping concentrations in the channel. Additionally the effect of a shallow counter n-doping at the interface on the mobility was determined and, finally, the properties of interface traps with the charge pumping method were examined. A lower p-doping in the cannel reduces the threshold voltage and increases the mobility simultaneously. A shallow counter n-doping shows a similar effect, but differences in the behavior of the charge pumping current can be observed, indicating that the nitrogen has a significant effect on the electrical properties of the interface, too.

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Zhang, Ying, Haiting Xie, and Chengyuan Dong. "Electrical Performance and Bias-Stress Stability of Amorphous InGaZnO Thin-Film Transistors with Buried-Channel Layers." Micromachines 10, no. 11 (2019): 779. http://dx.doi.org/10.3390/mi10110779.

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To improve the electrical performance and bias-stress stability of amorphous InGaZnO thin-film transistors (a-IGZO TFTs), we fabricated and characterized buried-channel devices with multiple-stacked channel layers, i.e., a nitrogen-doped a-IGZO film (front-channel layer), a conventional a-IGZO film (buried-channel layer), and a nitrogen-doped a-IGZO film (back-channel layer). The larger field-effect mobility (5.8 cm2V−1s−1), the smaller subthreshold swing value (0.8 V/dec, and the better stability (smaller threshold voltage shifts during bias-stress and light illumination tests) were obtained for the buried-channel device relative to the conventional a-IGZO TFT. The specially designed channel-layer structure resulted in multiple conduction channels and hence large field-effect mobility. The in situ nitrogen-doping caused reductions in both the front-channel interface trap density and the density of deep states in the bulk channel layers, leading to a small subthreshold swing value. The better stability properties may be related to both the reduced trap states by nitrogen-doping and the passivation effect of the nitrogen-doped a-IGZO films at the device back channels.

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44

Moni, Jackuline, and T. Jaspar Vinitha Sundari. "Junctionless Tunneling Nanowire for Steep Subthreshold Slope." Advanced Science Letters 24, no. 8 (2018): 5695–99. http://dx.doi.org/10.1166/asl.2018.12179.

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Using standardized simulations, we report a meticulous learning of the Junctionless nanowire with tunneling mechanism and the dependence of Subthreshold slope on operational parameters by varying the channel diameter, Gate length and doping concentration using Synopsys Sentaurus TCAD simulations. For the first time, Junctionless Nanowire in the company of tunneling architecture is proposed and explored. Our simulation study shows that a decrease in channel diameter and doping concentration results in higher band to band generation and steeper slope. Junctionless tunneling nanowire of diameter 10 nm, gate length of 20 nm, and uniform doping concentration of 1e19 cm−3 obtains steepest Subthreshold swing of about 8 mV/dec (point) and 52 mV/dec (average), an on/off current ratio of 1010, on current of 10−5 A/um.

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45

Ghosal, Subhro, Madhabi Ganguly, and Debarati Ghosh. "A Study on Sensitivity of Some Switching Parameters of JLT to Structural Parameters." Nanoscience & Nanotechnology-Asia 10, no. 4 (2020): 433–46. http://dx.doi.org/10.2174/2210681209666190905124818.

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Background: The stringent technological constraints imposed by the requirement of ultra-sharp doping profiles associated with the sub-30 nm regime has led to the search for alternatives to the conventional Metal Oxide Semiconductor (MOS) Field Effect Transistor (FET). An obvious alternative is a device whose architecture does not have any junctions in the sourcechannel- drain path. One such device is the Junctionless transistor comprising of an isolated ultrathin highly doped semiconductor layer whose volume is fully depleted in the OFF state and is around flat- band in the ON state. Such a structure overcomes the stringent technological requirement of an ultra-sharp grading profile required for nano-scale MOSFETs. For widespread application in today’s high-speed circuits, a key factor would be its effectiveness as a switch. Methods: In this work we have studied the relative sensitivity of two such parameters namely the ION/IOFF ratio and gate capacitance to variations in several structural parameters of the device namely channel width, composition of the dielectric layer, material composition of the channel region (i.e. Si vis-à-vis SiGe), doping concentration of the channel region and non-uniformity in the doping profile. Results: The work demonstrates through device simulations that replacement of Si with Si-Ge leads to an improvement in the performance. Conclusion: The most notable change has been observed by using a vertically graded doping profile as opposed to the original proposed uniformly doped channel.

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Kim, Jang Hyun, and Hyunwoo Kim. "Demonstration of a Frequency Doubler Using a Tunnel Field-Effect Transistor with Dual Pocket Doping." Electronics 12, no. 24 (2023): 4932. http://dx.doi.org/10.3390/electronics12244932.

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In this study, a frequency doubler that consists of a tunnel field-effect transistor (TFET) with dual pocket doping is proposed, and its operation is verified using technology computer-aided design (TCAD) simulations. The frequency-doubling operation is important to having symmetrical current characteristics, which eliminate odd harmonics and the need for extra filter circuitry. The proposed TFET has intrinsically bidirectional and controllable currents that can be implemented by pocket doping, which is located at the junction between the source/drain (S/D) and the channel region, to modify tunneling probabilities. The source-to-channel (ISC) and channel-to-drain currents (ICD) can be independently changed by managing each pocket doping concentration on the source and drain sides (NS,POC and ND,POC). After that, the current matching process was investigated through NS,POC and ND,POC splits, respectively. However, it was found that the optimized doping condition achieved at the device level (namely, a transistor evaluation) is not suitable for a frequency doubler operation because the voltage drop generated by a load resistor in the frequency doubler circuit configuration causes the currents to be unbalanced between ISC and ICD. Therefore, after symmetrical current matching was performed by optimizing NS,POC and ND,POC at the circuit level, it was clearly seen that the output frequency was doubled in comparison to the input sinusoidal signal. In addition, the effects of the S/D and pocket doping variations that can occur during process integration were investigated to determine how much frequency multiplications are affected, and these variations have the immunity of S/D doping and pocket doping length changes. Furthermore, the impact of device scaling with gate length (LG) variations was evaluated. Based on these findings, the proposed frequency doubler is anticipated to offer benefits for circuit design and low-power applications compared to the conventional one.

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Zimmermann, T., M. Neuburger, M. Kunze, et al. "P-Channel InGaN-HFET Structure Based on Polarization Doping." IEEE Electron Device Letters 25, no. 7 (2004): 450–52. http://dx.doi.org/10.1109/led.2004.830285.

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48

Valletta, A., L. Mariucci, A. Bonfiglietti, G. Fortunato, and S. D. Brotherton. "Channel doping effects in poly-Si thin film transistors." Thin Solid Films 487, no. 1-2 (2005): 242–46. http://dx.doi.org/10.1016/j.tsf.2005.01.073.

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49

Young, P. G., R. A. Mena, S. A. Alterovitz, S. E. Schacham, and E. J. Haugland. "Temperature independent quantum well FET with delta channel doping." Electronics Letters 28, no. 14 (1992): 1352. http://dx.doi.org/10.1049/el:19920858.

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50

He, Hongyang, Tiejun Li, Yuxiang Lin, Shuya Yang, Maojing Li, and Jinyan Pan. "Memory Performance Enhancement by Inducing Conductive Channel via Doping." Journal of Physics: Conference Series 2566, no. 1 (2023): 012131. http://dx.doi.org/10.1088/1742-6596/2566/1/012131.

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Abstract Due to the excellent nonvolatile resistance characteristics demonstrated by hafnium oxide, it is the potential to facilitate the use of resistive random access memory. In this paper, an ingenious method using doping to locate conductive channels is presented to improve the stable rheostatic performance of HfO2-based rheostatic memory. Metal particles are located to enhance the electric field locally to spur on conductive filaments in situ so that the resistive parameters Vset and Vreset are reduced, the relative fluctuation value (standard deviation/mean) of the Vset is reduced from 22.57% to 18.16%, and that of Vreset is reduced from 19.59% to 16.77%. Consequently, the device gains more stable resistance switching with a larger resistive window.

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