Relevant bibliographies by topics / InP, GaP

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'InP, GaP'

Author: Grafiati
Published: 4 June 2021
Last updated: 1 February 2022

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Journal articles on the topic "InP, GaP"

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Sun, Yanning, Aristo Yulius, Guohua Li, and Jerry M. Woodall. "Drift dominated InP/GaP photodiodes." Solid-State Electronics 48, no. 10-11 (October 2004): 1975–79. http://dx.doi.org/10.1016/j.sse.2004.05.043.

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Ishida, K., T. Nomura, H. Tokunaga, H. Ohtani, and T. Nishizawa. "Miscibility gaps in the GaPInP, GaPGaSb, InPInSn and InAsInSb systems." Journal of the Less Common Metals 155, no. 2 (November 1989): 193–206. http://dx.doi.org/10.1016/0022-5088(89)90228-2.

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Shen, Guozhen, Yoshio Bando, and Dmitri Golberg. "InP-GaP Bi-Coaxial Nanowires and Amorphous GaP Nanotubes." Journal of Physical Chemistry C 111, no. 9 (February 9, 2007): 3665–68. http://dx.doi.org/10.1021/jp067691r.

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Saravanan, R., S. Israel, N. Srinivasan, and S. K. Mohanlal. "Charge transfer in GaP and InP." physica status solidi (b) 194, no. 2 (April 1, 1996): 435–41. http://dx.doi.org/10.1002/pssb.2221940202.

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Wan, J. Z., J. G. Simmons, and D. A. Thompson. "Band gap modification in Ne+-ion implanted In1−xGaxAs/InP and InAsyP1−y/InP quantum well structures." Journal of Applied Physics 81, no. 2 (January 15, 1997): 765–70. http://dx.doi.org/10.1063/1.364440.

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Эполетов, В. С., А. Е. Маричев, Б. В. Пушный, and Р. А. Салий. "Электрические контакты к структурам на основе InP с подконтактным слоем к p-InP, легированным Zn." Журнал технической физики 46, no. 23 (2020): 13. http://dx.doi.org/10.21883/pjtf.2020.23.50340.18467.

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The paper presents the results of using sub-contact layers with a band gap from 0.35 to 0.8 eV to obtain low-resistance electrical contacts to p-InP. An experimental dependence of the contact resistance on the band gap of the sub-contact material In(x)Ga(1-x)As is obtained.
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Kurimoto, Takeshi, Noriaki Hamada, and Atsushi Oshiyama. "Electronic structure and band gap of (GaP)1(InP)1(111) superlattice." Superlattices and Microstructures 5, no. 2 (January 1989): 171–73. http://dx.doi.org/10.1016/0749-6036(89)90277-2.

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Hunter, P. "Analysis extra: Changing platforms span credibility gap." Information Professional 4, no. 2 (April 1, 2007): 38. http://dx.doi.org/10.1049/inp:20070216.

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Masselink, W. T., F. Hatami, G. Mussler, and L. Schrottke. "InP quantum dots in GaP: Growth and luminescence." Materials Science in Semiconductor Processing 4, no. 6 (December 2001): 497–501. http://dx.doi.org/10.1016/s1369-8001(02)00008-2.

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Li, Zhengrong, and Dominick J. Casadonte. "Facile sonochemical synthesis of nanosized InP and GaP." Ultrasonics Sonochemistry 14, no. 6 (September 2007): 757–60. http://dx.doi.org/10.1016/j.ultsonch.2006.12.015.

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Dissertations / Theses on the topic "InP, GaP"

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Beaudoin, Mario. "Electrical transport properties of n-Type InP." Thesis, McGill University, 1988. http://digitool.Library.McGill.CA:80/R/?func=dbin-jump-full&object_id=61237.

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InP obtained by metal-organic vapor phase epitaxy, with properties similar to GaAs, shows mobilities approaching the theoretical maxima at low temperatures. However, the corresponding values remain abnormally low at room temperature where a pronounced electronic excitation to the conduction band is observed simultaneously. This reduction of the mobility is attributed to the presence of deep centers that are electrically inactive at low temperatures but become excited when the temperature increases. A model based on an iterative solution to the Boltzmann equation and accounting for the usual scattering mechanisms, including inelastic interactions, is able to explain the data perfectly and shows that a very high mobility at low temperature is not a sufficient measure of the purity for this material. The binding energy of the deep centers depends on the organo-metalic source used for the growth. This links the solution of this problem to the purification of the chemicals. Depletion effects at the interfaces did not appear to be significant. (Abstract shortened by UMI.)
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Tudury, Heloisa Andrade de Paula. "Gap direto-indireto em poços quânticos de camadas tensionadas de InGaAs/InP." [s.n.], 2001. http://repositorio.unicamp.br/jspui/handle/REPOSIP/277786.

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Orientador: Fernando Iikawa
Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Fisica "Gleb Wataghin"
Made available in DSpace on 2018-08-02T02:53:03Z (GMT). No. of bitstreams: 1 Tudury_HeloisaAndradedePaula_M.pdf: 2460328 bytes, checksum: a3be30d81a490ff71b29d80aaf37993f (MD5) Previous issue date: 2001
Resumo:Estudamos a transição de gap direto-indireto em poços quânticos de dopagem modulada de camadas tensionadas de In1-xG axAs/InP. As amostras analisadas foram crescidas por LP-MOCVD. Os poços quânticos têm largura de 6 nm com concentrações de gálio entre x = 0.47 e 0.60. O objetivo da dissertação foi analisar a evolução da estrutura de banda em função da concentração de Ga por medidas ópticas. Realizamos medidas de fotoluminescência com a temperatura da amostra variando entre 2 e 100 K. Observamos que a forma de linha de fotoluminescência é bastante sensível à composição de Ga na liga. Cálculos teóricos baseados no hamiltoniano de Luttinger-Kohn explicam qualitativamente esse comportamento dos espectros, mostrando que realmente há influência da estrutura de bandas nos mesmos. Nos dados experimentais também observamos efeitos de localização possivelmente provenientes da flutuação do potencial da liga, rugosidade das interfaces e defeitos criados pela presença da tensão intrínseca. Realizamos também medidas de fotoluminescencia na presença de uma pressão biaxial externa, utilizando uma célula de pressão baseada na deformação de placa construída em nossos laboratórios, para verificar se o comportamento observado nos espectros de fotoluminescência em diferentes amostras é realmente devido a mudança na estrutura de banda. Os espectros de fotoluminescência medidos na presença de pressão externa mostram realmente as mesmas características - variação na forma da linha de emissão - atribuídas a mudança de gap direto para indireto à medida que aumenta a pressão externa, efeito equivalente àquele decorrente do aumento da concentração do Ga em diferentes amostras. Isso fortalece a nossa interpretação de que o efeito da estrutura de bandas é um dos responsáveis pelo comportamento apresentado nos espectros de fotoluminescência. Este trabalho abre a possibilidade de realizar estudos de efeitos dependentes da estrutura de bandas em poços quânticos aplicando pressão biaxial externa
Abstract:We have studied the direct-to-indirect gap transition in strained-layer modulation-doped In1-xGaxAs/InP quantum wells. The samples were grown by LP-MOCVD. The quantum wellthickness is 6 nm and their Ga content was varied from x = 0.47 to 0.60. Our purpose is to study the influence of Ga content variation on the band structure by optical measurements. Photoluminescence measurements were performed under temperatures varying from 2 to 100K. We have observed that the photoluminescence line shape is very sensitive to the Ga composition in the alloy. Theoretical calculations based on Luttinger-Kohn Hamiltonian explain qualitatively the behavior of the photoluminescence spectra, showing the influence of the valence band structure on them. Our experimental data also show localization effects, possibly arose from the alloy potential fluctuation, interfaces roughness and defects created due to the built-in strain. We also carried out photoluminescence measurements under an externally applied biaxial strain, using a pressure cell based on a plate bending method, in order to verify whether the behavior observed in photoluminescence spectra in different samples is due to the band structure effects. The photoluminescence spectra measured in the presence of an external strain show similar behavior to those observed when the Ga concentration is changed in different samples due to the changing the band structure from direct to indirect-gap. This result reinforces that the band-structure effect is responsible for the behavior observed in photoluminescence spectra. This work opens the possibility of further research on the band-structure dependent effects on quantum wells under externally applied biaxial strain
Mestrado
Física
Mestra em Física
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Hatami, Fariba. "Indium phosphide quantum dots in GaP and in In 0.48 Ga 0.52 P." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2002. http://dx.doi.org/10.18452/14873.

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Im Rahmen dieser Arbeit wurden selbstorganisierte, verspannte InP-Quantenpunkte mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und optische Eigenschaften untersucht. Die Quantenpunkte wurden sowohl in InGaP-Matrix gitterangepasst auf GaAs-Substrat als auch in GaP-Matrix auf GaP-Substrat realisiert. Die starke Gitterfehlanpassung von 3,8% im InP/InGaP- bzw. 7,7% im InP/GaP-Materialsystem ermöglicht Inselbildung mittels des Stranski-Krastanow-Wachstumsmodus: Ab einer kritischen InP-Schichtdicke findet kein zweidimensionales, sondern ein dreidimensionales Wachstum statt. Die kritische Schichtdicke wurde mit etwa 3 Monolagen für das InP/InGaP- und mit etwa 1,8 Monolagen für das InP/GaP-System bestimmt. Die strukturellen Untersuchungen zeigen, dass InP Quantenpunkte in GaP im Vergleich zu solchen in InGaP größer sind und stärker zum Abbau von Verspannung tendieren. Die in InGaP-Matrix eingebettete InP-Quantenpunkte zeigen sehr ausgeprägte optische Emissionen, die, in Abhängigkeit von den Wachstumsparametern, im Bereich von 1,6 bis 1,75eV liegen. Die Emissionslinie wird der strahlenden Rekombination von in den Quantenpunkten lokalisierten Elektronen und Löchern zugeordnet. Dies wird auch durch das Bänderschema bestätigt, das mit Hilfe der Model-Solid-Theorie modelliert wurde. Darüber hinaus weist die Lebensdauer der Ladungsträger von einigen hundert Pikosekunden darauf hin, dass die InP/InGaP Quantenpunkte vom Typ I sind. Zusätzlich zu den optischen Eigenschaften wurde die Anordnung von dicht gepackten InP-Quantenpunkten in und auf InGaP mittels zweidimensionaler Fourier-Transformation der Daten aus der Atomkraftmikroskopie, Transmissionelektronmikroskopie und diverser Röntgen-Streuexperimente untersucht sowie die planaren und vertikale Ordnungseffekte der Quantenpunkte studiert. Die Untersuchungen zeigen, dass die Ordnung der Quantenpunkte sowohl hinsichtlich ihrer Packungsdichte als auch ihrer Orientierung mit wachsender InP-Bedeckung zunimmt. Darüber hinaus wurde die Verspannungsverteilung in den InP/InGaP-Quantenpunkten mit Hilfe von diffuser Röntgen-Streuung in Verbindung mit kinematischen Simulationen studiert und eine asymmetrische Form der Quantenpunkte festgestellt, die auch Ursache für die gemessene Polarisationsanisotropie der Photolumineszenz sein kann. Die in GaP-Matrix eingebetteten InP-Quantenpunkte wurden im Rahmen dieser Arbeit erstmals erfolgreich auf ihre aktiven optischen Eigenschaften hin untersucht. Sie zeigen eine optische Emission zwischen 1,9 und 2 eV im sichtbaren Bereich. Diese strahlende Rekombination wird ebenfalls dem direkten Übergang zwischen Elektronen- und Löcherzuständen zugeordnet, die in den InP Quantenpunkten lokalisiert sind. Auch Photolumineszenzmessungen unter mechanischem Druck weisen darauf hin, dass es sich in diesem System hauptsächlich um einen direkten räumlichen Übergang handelt. Dieses Ergebnis wird dadurch untermauert, dass die Lebensdauer der Ladungsträger im Bereich von etwa 2 ns liegt, was nicht untypisch für Typ-I-Systeme ist. Die Ergebnisse für zweidimensionale, in GaP eingebettete InP-Schichten zeigen im Gegensatz zu den Quantenpunkten, dass die strahlende Rekombination in InP/GaP Quantentöpfen aufgrund eines indirekten Übergangs (sowohl in Orts- als auch in Impulsraum) zwischen Elektronen- und Löcherzuständen erfolgt. Die optischen Emissionslinien liegen für Quantentöpfe im Bereich von 2,15 bis 2,30eV. Die nachgewiesene sehr lange Lebensdauer der Ladungsträger von etwa 20ns weist weiter darauf hin, dass die Quantentöpfe ein Typ-II-System sind. Nach Modellierung des Bänderschemas für das verspannte InP/GaP-System und Berechnung der Energieniveaus von Löchern und Elektronen darin mit Hilfe der Effektive-Masse-Näherung in Abhängigkeit von der InP-Schichtdicke zeigt sich ferner, dass für InP-Quantentöpfe mit einer Breite kleiner als 3nm die Quantisierungsenergie der Elektronen so groß ist, dass der X-Punkt in GaP energetisch tiefer liegt als der Gamma-Punkt in InP. Dieser Potentialverlauf führt dazu , dass die Elektronen im X-Minimum des GaP lokalisieren, während die Löcher in der InP-Schicht bleiben. Optische Untersuchungen nach thermischer Behandlung der Quantenpunkte führen sowohl im InP/InGaP- als auch im InP/GaP-System zur Verstärkung der Lumineszenz, die bis zu 15 mal internsiver als bei unbehandelten Proben sein kann. Insgesamt zeigt diese Arbeit, dass InP-Quantenpunkte durch ihre optischen Eigenschaften sehr interessant für optoelektronische Anwendungen sind. Die Verwendung von durchsichtigem GaP (mit einer größeren Bandlücke und kleineren Gitterkonstante im Vergleich zu GaAs und InGaP) als Matrix und Substrat hat nicht nur den Vorteil, dass die InP-Quantenpunkte hierbei im sichtbaren Bereich Licht emittieren, sondern man kann in der Praxis auch von einer hochentwickelten GaP-basierten LED-Technologie profitieren. Hauptergebnis dieser Arbeit ist, dass die in indirektes GaP eingebetteten InP-Quantenpunkte aktive optische Eigenschaften zeigen. Sie können daher als aktive Medien zur Realisierung neuartiger effizienter Laser und Leuchtdioden verwendet werden.
The growth and structural properties of self-assembled InP quantum dots are presented and discussed, together with their optical properties and associated carrier dynamics. The QDs are grown using gas-source molecular-beam epitaxy in and on the two materials InGaP (lattice matched to GaAs) and GaP. Under the proper growth conditions, formation of InP dots via the Stranski-Krastanow mechanism is observed. The critical InP coverage for 2D-3D transition is found to be 3ML for the InP/ InGaP system and 1.8ML for the InP/GaP system. The structural characterization indicates that the InP/GaP QDs are larger and, consequently, less dense compared to the InP/ InGaP QDs; hence, InP dots on GaP tend to be strain-relaxed. The InP/ InGaP QDs tend to form ordered arrays when InP coverage is increased. Intense photoluminescence from InP quantum dots in both material systems is observed. The PL from InP/GaP QDs peaks between 1.9 and 2 eV and is by about 200 meV higher in energy than the PL line from InP/ InGaP QDs. The optical emission from dots is attributed to direct transitions between the electrons and heavy-holes confined in the InP dots, whereas the photoluminescence from a two-dimensional InP layer embedded in GaP is explained as resulting from the spatially indirect recombination of electrons from the GaP X valleys with holes in InP and their phonon replicas. The type-II band alignment of InP/GaP two-dimensional structures is further confirmed by the carrier lifetime above 19 ns, which is much higher than in type-I systems. The observed carrier lifetimes of 100-500 ps for InP/ InGaPQDs and 2 ns for InP/GaP QDs support our band alignment modeling. Pressure-dependent photoluminescence measurements provide further evidence for a type-I band alignment for InP/GaP QDs at normal pressure, but indicate that they become type-II under hydrostatic pressures of about 1.2 GPa and are consistent with an energy difference between the lowest InP and GaP states of about 31 meV. Exploiting the visible direct-bandgap transition in the GaP system could lead to an increased efficiency of light emission in GaP-based light emitters.
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Shahid, Naeem. "Technology and properties of InP-based photonic crystal structures and devices." Doctoral thesis, KTH, Halvledarmaterial, HMA, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-101662.

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Photonic crystals (PhCs) are periodic dielectric structures that exhibit a photonic band gap; a range of wavelengths for which light propagation is forbidden. 2D PhCs exhibit most of the properties as their three dimension counterparts with a compatibility with standard semiconductor processing techniques such as epitaxial growth, electron beam lithography, Plasma deposition/etching and electromechanical lapping/polishing. Indium Phosphide (InP) is the material of choice for photonic devices especially when it comes to realization of coherent light source at 1.55 μm wavelength. Precise engineering of the nanostructures in the PhC lattice offers novel ways to confine, guide and control light in phonic integrated circuits (PICs). Strong confinement of light in PhCs offer novel opportunities in many areas of physics and engineering. Dry etching, a necessary process step in PhC device manufacturing, is known to introduce damage in the etched material. Process induced damage and its impact on the electrical and optical properties of PhCs depends on the etched material, the etching technique and process parameters. We have demonstrated a novel post-etch process based on so-called mass-transport (MT) technology for the first time on InP-based PhCs that has significantly improved side-wall verticality of etched PhC holes. A statistical analysis performed on several devices fabricated by MT process technology shows a great deal of improvement in the reliability of optical transmission characteristics which is very promising for achieving high optical quality in PhC components. Several PhC devices were manufactured using MT technology. Broad enough PhC waveguides that operate in the mono/multi-mode regime are interesting for coarse wavelength de-multiplexing. The fundamental mode and higher order mode interaction creates mini-stop band (MSB) in the dispersion diagram where the higher order mode has a lower group velocity which can be considered as slow light regime. In this thesis work, the phenomena of MSBs and its impact on transmission properties have been evaluated. We have proposed and demonstrated a method that enables spectral tuning with sub-nanometer accuracy which is based on the transmission MSB. Along the same lines most of the thesis work relates to broad enough PhC guides that operated in the multimode regime. Temperature tuning experiments on these waveguides reveals a clear red-shift with a gradient of dλ/dT=0.1 nm/˚C. MSBs in these waveguides have been studied by varying the width in incremental amounts. Analogous to semiconductors heterostructures, photonic heterostructures are composed of two photonic crystals with different band-gaps obtained either by changing the air-fill factor or by the lattice constant. Juxtaposing two PhC and the use of heterostructures in waveguide geometry has been experimentally investigated in this thesis work. In particular, in multimode line defect waveguides the “internal” MSB effect brings a new dimension in single junction-type photonic crystal waveguide (JPCW) and heterostructure W3 (HW3) for fundamental physics and applications. We have also fabricated an ultra-compact polarization beam splitter (PBS) realized by combining a multimode waveguide with internal PhC. MSBs in heterostructure waveguides have shown interesting applications such as designable band-pass flat-top filters, and resonance-like filters with high transmission. In the course of this work, InGaAsP suspended membrane technology was developed. An H2 cavity with a linewidth of ~0.4 nm, corresponding to a Q value of ~3675 has been shown. InGaAsP PhC membrane is an ideal platform to study coupled quantum well/dot-nanocavity system.

QC 20120831

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Kristukat, Christian. "High pressure study of the electronic structure of self-assembled InAs/GaAs and InP/GaP quantum dots." [S.l.] : [s.n.], 2006. http://deposit.ddb.de/cgi-bin/dokserv?idn=97877339X.

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BENSAOULA, ABDELHAKIM. "Realisation d'un super-reseau a contraintes balancees inp/gaas/gap/gaas par epitaxie par jets moleculaires d'organo-metalliques." Nice, 1995. http://www.theses.fr/1995NICE4857.

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Les premiers travaux portant sur les effets des contraintes sur les proprietes des semi-conducteurs remontent a plus de 30 ans. Aujourd'hui, l'utilisation des contraintes comme parametres ajustables permettant la modification des proprietes electroniques des materiaux est largement acceptee. Cependant, l'application experimentale de ce phenomene rencontre bien des difficultes. En effet, les materiaux contraints se trouvent aussi predisposes aux defauts de dislocations de par la limite imposee par l'epaisseur critique. Dans ce travail, nous proposons l'utilisation de super-reseaux a contraintes alternees afin de contourner ce probleme. Depose sur du gaas (100), gap presente un desaccord de maille de -3,7% quant a inp, depose sous les memes conditions, il presente un desaccord de maille de +3,9%. Ces valeurs font du super-reseau gap/gaas/inp/gaas le parfait exemple permettant une meilleure comprehension des phenomenes mis en jeux. Nous etudions, dans un premier temps, les structures simples gap/gaas et inp/gaas en preparation a l'etude des structures plus complexes. Les resultats obtenus par diffraction des rayons-x et spectroscopie de photoluminescence montrent un parfait accord entre les niveaux des contraintes mesures et les energies du gap. Nous montrons qu'il est possible, par un choix des epaisseurs des couches de gap et inp, de deplacer la reponse optique de la structure sur une large region d'energie
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Auvray, Laurent. "EPVOM du matériau InGaAs-InP avec l'arsine ou le triméthylarsenic et du nitrure à petit gap GaAsN-GaAs : utilisation de l'azote comme gaz vecteur." Lyon 1, 2001. http://www.theses.fr/2001LYO19001.

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Les matériaux InGaAs et GaAsN ont été élaborés par EPVOM en utilisant comme gaz vecteur H2 ou N2. Un inconvénient de l'EPVOM est l'utilisation d'hydrures (arsine, phosphine) très toxiques, stockés sous haute pression. Par contre le triméthylarsenic (TMAs) est un composé peu toxique, liquide à température ambiante. Nous présentons une étude comparative entre le TMAs et l'arsine pour la croissance de In0,53Ga0,47As/InP, en association avec le triméthylindium et le triméthylgallium (TMG). La substitution du TMAs à l'arsine induit une dégradation des propriétés morphologiques (AFM), électriques et optiques des couches, tendance dramatiquement accentuée sous gaz vecteur N2. En revanche, avec l'arsine, des couches de qualité électronique équivalente sont obtenues avec H2 ou N2. Les nitrures Ga(In)AsN s'imposent aujourd'hui comme une voie pour réaliser l'émission à 1,3 micromètre sur substrat GaAs. Cette longueur d'onde, utile pour les Télécommunications optiques, est accessible car l'incorporation de faibles quantités d'azote réduit fortement le gap du matériau. Cependant, cette incorporation est difficile est nécessite des conditions de croissance fortement hors-équilibre. Nous avons privilégié le gaz vecteur N2 car il facilite cette incorporation. La 1,1-diméthylhydrazine a été choisie comme précurseur de l'azote, associée au TGM et à l'arsine. L'incorporation de l'azote a été étudiée en fonction des paramètres de croissance. Son influence sur le mode de croissance des couches a été explorée. Les propriétés optiques ont été caractérisées par photoluminescence (PL) et par photoréflectivité. L'incorporation d'azote dégrade fortement la luminescence du matériau. Cependant, un recuit post-croissance des couches, dans des conditions optimisées, permet une amélioration spectaculaire de leur qualité optique. L'émission de PL à basse température a pour origine la recombinaison d'excitons localisés. À plus haute température, elle est dominée par la recombinaison d'excitons libres.
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Shao, Jun. "Effective mass and valence-band structure in Ga Kappa In 1-Kappa As/InP and Ga Kappa In 1-Kappa P/AlGaInP quantum wells." [S.l. : s.n.], 2002. http://www.bsz-bw.de/cgi-bin/xvms.cgi?SWB9818580.

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Braccioli, Marco <1979&gt. "Study of silicon-on-insulator multiple-gate MOS structures including band-gap engineering and self heating effects." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2009. http://amsdottorato.unibo.it/1515/.

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The progresses of electron devices integration have proceeded for more than 40 years following the well–known Moore’s law, which states that the transistors density on chip doubles every 24 months. This trend has been possible due to the downsizing of the MOSFET dimensions (scaling); however, new issues and new challenges are arising, and the conventional ”bulk” architecture is becoming inadequate in order to face them. In order to overcome the limitations related to conventional structures, the researchers community is preparing different solutions, that need to be assessed. Possible solutions currently under scrutiny are represented by: • devices incorporating materials with properties different from those of silicon, for the channel and the source/drain regions; • new architectures as Silicon–On–Insulator (SOI) transistors: the body thickness of Ultra-Thin-Body SOI devices is a new design parameter, and it permits to keep under control Short–Channel–Effects without adopting high doping level in the channel. Among the solutions proposed in order to overcome the difficulties related to scaling, we can highlight heterojunctions at the channel edge, obtained by adopting for the source/drain regions materials with band–gap different from that of the channel material. This solution allows to increase the injection velocity of the particles travelling from the source into the channel, and therefore increase the performance of the transistor in terms of provided drain current. The first part of this thesis work addresses the use of heterojunctions in SOI transistors: chapter 3 outlines the basics of the heterojunctions theory and the adoption of such approach in older technologies as the heterojunction–bipolar–transistors; moreover the modifications introduced in the Monte Carlo code in order to simulate conduction band discontinuities are described, and the simulations performed on unidimensional simplified structures in order to validate them as well. Chapter 4 presents the results obtained from the Monte Carlo simulations performed on double–gate SOI transistors featuring conduction band offsets between the source and drain regions and the channel. In particular, attention has been focused on the drain current and to internal quantities as inversion charge, potential energy and carrier velocities. Both graded and abrupt discontinuities have been considered. The scaling of devices dimensions and the adoption of innovative architectures have consequences on the power dissipation as well. In SOI technologies the channel is thermally insulated from the underlying substrate by a SiO2 buried–oxide layer; this SiO2 layer features a thermal conductivity that is two orders of magnitude lower than the silicon one, and it impedes the dissipation of the heat generated in the active region. Moreover, the thermal conductivity of thin semiconductor films is much lower than that of silicon bulk, due to phonon confinement and boundary scattering. All these aspects cause severe self–heating effects, that detrimentally impact the carrier mobility and therefore the saturation drive current for high–performance transistors; as a consequence, thermal device design is becoming a fundamental part of integrated circuit engineering. The second part of this thesis discusses the problem of self–heating in SOI transistors. Chapter 5 describes the causes of heat generation and dissipation in SOI devices, and it provides a brief overview on the methods that have been proposed in order to model these phenomena. In order to understand how this problem impacts the performance of different SOI architectures, three–dimensional electro–thermal simulations have been applied to the analysis of SHE in planar single and double–gate SOI transistors as well as FinFET, featuring the same isothermal electrical characteristics. In chapter 6 the same simulation approach is extensively employed to study the impact of SHE on the performance of a FinFET representative of the high–performance transistor of the 45 nm technology node. Its effects on the ON–current, the maximum temperatures reached inside the device and the thermal resistance associated to the device itself, as well as the dependence of SHE on the main geometrical parameters have been analyzed. Furthermore, the consequences on self–heating of technological solutions such as raised S/D extensions regions or reduction of fin height are explored as well. Finally, conclusions are drawn in chapter 7.
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Niessen, Daniel <1983&gt. "Nonlinear Characterization and Modelling of GaN HEMTs for Microwave Power Amplifier Applications." Doctoral thesis, Alma Mater Studiorum - Università di Bologna, 2013. http://amsdottorato.unibo.it/5774/.

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Semiconductors technologies are rapidly evolving driven by the need for higher performance demanded by applications. Thanks to the numerous advantages that it offers, gallium nitride (GaN) is quickly becoming the technology of reference in the field of power amplification at high frequency. The RF power density of AlGaN/GaN HEMTs (High Electron Mobility Transistor) is an order of magnitude higher than the one of gallium arsenide (GaAs) transistors. The first demonstration of GaN devices dates back only to 1993. Although over the past few years some commercial products have started to be available, the development of a new technology is a long process. The technology of AlGaN/GaN HEMT is not yet fully mature, some issues related to dispersive phenomena and also to reliability are still present. Dispersive phenomena, also referred as long-term memory effects, have a detrimental impact on RF performances and are due both to the presence of traps in the device structure and to self-heating effects. A better understanding of these problems is needed to further improve the obtainable performances. Moreover, new models of devices that take into consideration these effects are necessary for accurate circuit designs. New characterization techniques are thus needed both to gain insight into these problems and improve the technology and to develop more accurate device models. This thesis presents the research conducted on the development of new charac- terization and modelling methodologies for GaN-based devices and on the use of this technology for high frequency power amplifier applications.
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Books on the topic "InP, GaP"

1

Adachi, Sadao. Physical properties of III-V semiconductor compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. New York: Wiley, 1992.

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Edwards, Hank. Fluffers, Inc.: A novel. Los Angeles: Alyson Books, 2002.

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Publishing, Ferrari International. Inn places: Gay & lesbian accommodations worldwide. Phoenix, AZ: Ferrari International Pub., 2001.

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Adachi, Sadao. Physical Properties of III-V Semiconductor Compounds: InP, Inas, Gaas, GaP, InGaAs and InGaAsP. Wiley & Sons, Limited, John, 2005.

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Ltd, ICON Group. IMP, INC.: International Competitive Benchmarks and Financial Gap Analysis (Financial Performance Series). 2nd ed. Icon Group International, 2000.

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Ltd, ICON Group. IBP, INC.: International Competitive Benchmarks and Financial Gap Analysis (Financial Performance Series). 2nd ed. Icon Group International, 2000.

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Ltd, ICON Group. IMP, INC.: Labor Productivity Benchmarks and International Gap Analysis (Labor Productivity Series). 2nd ed. Icon Group International, 2000.

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Ltd, ICON Group. IBP, INC.: Labor Productivity Benchmarks and International Gap Analysis (Labor Productivity Series). 2nd ed. Icon Group International, 2000.

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Ltd, ICON Group. PIZZA INN, INC.: International Competitive Benchmarks and Financial Gap Analysis (Financial Performance Series). 2nd ed. Icon Group International, 2000.

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Ltd, ICON Group, and ICON Group International Inc. PIZZA INN, INC.: Labor Productivity Benchmarks and International Gap Analysis (Labor Productivity Series). 2nd ed. Icon Group International, 2000.

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Book chapters on the topic "InP, GaP"

1

da Silva, E. C. F. "InP: energy gap." In Landolt-Börnstein - Group III Condensed Matter, 232. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_140.

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da Silva, E. C. F. "InP, wurtzite modification: energy gap." In Landolt-Börnstein - Group III Condensed Matter, 231. Berlin, Heidelberg: Springer Berlin Heidelberg, 2012. http://dx.doi.org/10.1007/978-3-642-23415-6_139.

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Döscher, Henning. "GaP(100) and InP(100) Surfaces." In GaP Heteroepitaxy on Si(100), 67–90. Cham: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-02880-4_4.

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Hoheisel, B., J. Stuke, M. Stutzmann, and W. Beyer. "Electron Spin Resonance of Amorphous GaAs, GaP, and InP." In Proceedings of the 17th International Conference on the Physics of Semiconductors, 877–80. New York, NY: Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_195.

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Butler, N., J. Jouglar, B. Salce, L. J. Challis, A. Ramdane, and P. L. Vuillermoz. "Phonon Scattering by Cr Ions in GaP and InP." In Phonon Scattering in Condensed Matter V, 123–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82912-3_36.

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Mićić, O. I., J. R. Sprague, C. J. Curtis, K. M. Jones, and A. J. Nozik. "Synthesis and Characterization of GaP, InP, and GaInP2 Quantum Dots." In Fine Particles Science and Technology, 317–30. Dordrecht: Springer Netherlands, 1996. http://dx.doi.org/10.1007/978-94-009-0259-6_24.

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Torres, Vitor J. B., J. Coutinho, and Patrick R. Briddon. "Local Vibrational Modes of Zn-H-P in GaP, InP and ZnTe." In Defect and Diffusion Forum, 31–36. Stafa: Trans Tech Publications Ltd., 2007. http://dx.doi.org/10.4028/3-908451-37-x.31.

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Wollschläger, J. "Structure of domain boundaries: other III–V compounds: GaP, GaSb, InAs, InP, InSb." In Physics of Solid Surfaces, 222–25. Berlin, Heidelberg: Springer Berlin Heidelberg, 2018. http://dx.doi.org/10.1007/978-3-662-53908-8_42.

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Lüdge, K., P. Vogt, O. Pulci, N. Esser, F. Bechstedt, and W. Richter. "Atomic Structure of GaP(00l) and InP(00l) Reconstructions: Scanning Tunneling Microscopy and ab initio Theory." In Springer Proceedings in Physics, 445–46. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_207.

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Yu, S., J. H. Chu, J. I. Lee, D. Kim, Y. Yee, D. S. Kim, and J. H. Lee. "Femtosecond Degenerate Four-Wave Mixing in a 350 μm Undoped InP at Far Below Band Gap." In Springer Series in Chemical Physics, 418–19. Berlin, Heidelberg: Springer Berlin Heidelberg, 1996. http://dx.doi.org/10.1007/978-3-642-80314-7_183.

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Conference papers on the topic "InP, GaP"

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Lin, Chao-Kun, David P. Bour, Jintian Zhu, William H. Perez, Michael H. Leary, Ashish Tandon, Scott W. Corzine, and Michael R. T. Tan. "Long-wavelength VCSELs with InP/air-gap DBRs." In Integrated Optoelectronic Devices 2004, edited by Chun Lei, Kent D. Choquette, and Sean P. Kilcoyne. SPIE, 2004. http://dx.doi.org/10.1117/12.538327.

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Kvitsiani, O., D. Laperashvil, T. Laperashvili, and V. Mikelashvili. "Solar cells based on InP/GaP/Si structure." In SPIE/COS Photonics Asia, edited by Xuping Zhang, Baojun Li, and Changyuan Yu. SPIE, 2016. http://dx.doi.org/10.1117/12.2248086.

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Yoshida, Toshiyuki, and Tamotsu Hashizume. "Air-gap capacitance-Voltage analysis of p-InP surfaces." In 2010 22nd International Conference on Indium Phosphide and Related Materials (IPRM). IEEE, 2010. http://dx.doi.org/10.1109/iciprm.2010.5516369.

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LIU, ZHENGANG, YUJUN BAI, MEIYAN YU, QILONG WANG, SHOUYI DONG, and DELIANG CUI. "DIRECT SYNTHESIS OF SELF-ASSEMBLED InP AND GaP NANOCRYSTALS." In Proceedings of the Seventh International Symposium on Hydrothermal Reactions. WORLD SCIENTIFIC, 2003. http://dx.doi.org/10.1142/9789812705228_0041.

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Kusserow, T., N. Dharmarasu, and H. Hillmer. "Tailored Stress in InP/GaInAs Layers for InP/Air-Gap DBR-Filters with Photonic Crystals." In IEEE/LEOS International Conference on Optical MEMS and Their Applications Conference, 2006. IEEE, 2006. http://dx.doi.org/10.1109/omems.2006.1708278.

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Huang, Yongqing, Xiaomin Ren, Hui Huang, Qi Wang, and Xingyan Wang. "High-performance InP-based resonant-cavity-enhanced photodetector based on InP/air-gap Bragg reflectors." In Asia-Pacific Optical Communications, edited by Chung-En Zah, Yi Luo, and Shinji Tsuji. SPIE, 2005. http://dx.doi.org/10.1117/12.580157.

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Ishikawa, Masato, Takashi Nakayama, Jisoon Ihm, and Hyeonsik Cheong. "Nitrogen-induced optical absorption spectra of InP and GaP: direct vs. indirect band-gap systems." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666264.

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Suwito, Galih R., Hassan R. Mojaver, and Nathaniel J. Quitoriano. "Air Gap/InP Distributed Bragg Reflectors for Mid-Infrared Applications." In Novel Optical Materials and Applications. Washington, D.C.: OSA, 2020. http://dx.doi.org/10.1364/noma.2020.nom4g.4.

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Recio, Miguel, Ana Ruiz, Juan Melendez, Jose M. Rodriguez, Gaspar Armelles, Maria L. Dotor, and Fernando Briones. "Novel GaP/InP strained heterostructures: growth, characterization,and technological perspectives." In Physical Concepts of Materials for Novel Optoelectronic Device Applications, edited by Manijeh Razeghi. SPIE, 1991. http://dx.doi.org/10.1117/12.24413.

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Masselink, W. T., and F. Hatami. "Light-emitting diodes based on InP quantum dots in GaP." In 2004 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2004. http://dx.doi.org/10.7567/ssdm.2004.g-10-1.

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Reports on the topic "InP, GaP"

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Shul, R. J., A. G. Baca, D. J. Rieger, H. Hou, S. J. Pearton, and F. Ren. ECR etching of GaP, GaAs, InP, and InGaAs in Cl{sub 2}/Ar, Cl{sub 2}/N{sub 2}, BCl{sub 3}/Ar, and BCl{sub 3}/N{sub 2}. Office of Scientific and Technical Information (OSTI), June 1996. http://dx.doi.org/10.2172/244631.

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Glewwe, Paul, Zoe James, Jongwook Lee, Caine Rolleston, and Khoa Vu. What Explains Vietnam’s Exceptional Performance in Education Relative to Other Countries? Analysis of the Young Lives Data from Ethiopia, Peru, India and Vietnam. Research on Improving Systems of Education (RISE), September 2021. http://dx.doi.org/10.35489/bsg-rise-wp_2021/078.

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Vietnam’s strong performance on the 2012 and 2015 PISA assessments has led to interest in what explains the strong academic performance of Vietnamese students. Analysis of the PISA data has not shed much light on this issue. This paper analyses a much richer data set, the Young Lives data for Ethiopia, India (Andhra Pradesh and Telangana), Peru and Vietnam, to investigate the reasons for the strong academic performance of 15-year-olds in Vietnam. Differences in observed child and household characteristics explain 37-39% of the gap between Vietnam and Ethiopia, while observed school variables explain only about 3-4 additional percentage points (although an important variable, math teachers’ pedagogical skills, is not available for Ethiopia). Differences in observed child and household characteristics explain very little of the gaps between Vietnam and India and between Vietnam and Peru, yet one observed school variable has a large explanatory effect: primary school math teachers’ pedagogical skills. It explains about 10-12% of the gap between Vietnam and India, raising the overall explained portion to 14-21% of the gap. For Peru, it explains most (65-84%) of the gap.
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Bustelo, Monserrat, Suzanne Duryea, Claudia Piras, Breno Sampaio, Giuseppe Trevisan, and Mariana Viollaz. The Gender Pay Gap in Brazil: It Starts with College Students' Choice of Major. Inter-American Development Bank, January 2021. http://dx.doi.org/10.18235/0003011.

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We herein discuss how college major choice affects gender wage gaps by highlighting the role that STEM majors play in explaining the gender wage gap in a developing country. We focus on a Latin American country where a systematic analysis of the interaction between students choice of college major and the gender wage gap is currently lacking. We take advantage of a very unique dataset of college students from the Universidade Federal de Pernambuco (UFPE), Brazil, to decompose the raw gender gap in hourly wages into one component that can be explained by differences in endowments between men and women as well as a second or residual component that reflects gender differences in the prices of market skills. We implement the commonly applied decomposition approach at the wage distributions mean and a decomposition procedure that considers variations across the wage distribution. Our results reveal that the majors that women and men select explain 50% of the gender wage gap at the mean, and STEM majors contribute to 30% of this difference. When examining different percentiles of the wage distribution, we find that the selection of a major is more important at the middle of the distribution than at the bottom or top.
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Gandini, Camilla, Andrea Monje Silva, and Pablo Guerrero. Gender and Transport in Haiti: Gender Diagnostic and Gender Action Plan. Edited by Amanda Beaujon Marin. Inter-American Development Bank, February 2021. http://dx.doi.org/10.18235/0003069.

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This technical note encompasses Haiti's gender assessment, evaluates the success of gender specific actions implemented between 2011-2017, and presents a Gender and Transport Action Plan (GAP). The GAPs main aim is to guide investments in Haiti's transport sector in conceptualizing and designing gender-sensitive transport projects. By proposing specific gender actions and outcomes, the GAP establishes a clear path to integrate a gender dimension into operations design, implementation and, monitoring and evaluation. The GAP presents an overall plan to support the development of Haitian women. However, it focuses in the needs of women as transport services users and devotes specific attention to two female sub-groups, comprised by Haitian women engaged in informal trade of local and regional products. These women are known as Madan Sara (MS), and local female mango producers and traders (MPT). The decision of focusing on MS is related to their vital role in the Haitian local labor market and the peculiarity of their work, which has specific transport needs. Understanding and addressing these female groups transport constrains could strategically improve the outcomes of upcoming transport investments and bring more benefits to its beneficiaries.
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Bloom, David E., Victoria Y. Fan, Vadim Kufenko, Osondu Ogbuoji, Klaus Prettner, and Gavin Yamey. Going beyond GDP with a parsimonious indicator: inequality-adjusted healthy lifetime income. Verlag der Österreichischen Akademie der Wissenschaften, March 2021. http://dx.doi.org/10.1553/populationyearbook2021.res1.1.

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Per capita GDP has limited use as a well-being indicator because it does notcapture many dimensions that imply a “good life”, such as health and equality ofopportunity. However, per capita GDP has the virtues of being easy to interpret andto calculate with manageable data requirements. Against this backdrop, there is aneed for a measure of well-being that preserves the advantages of per capita GDP,but also includes health and equality. We propose a new parsimonious indicatorto fill this gap, and calculate it for 149 countries. This new indicator could beparticularly useful in complementing standard well-being indicators during theCOVID-19 pandemic. This is because (i) COVID-19 predominantly affects olderadults beyond their prime working ages whose mortality and morbidity do notstrongly affect GDP, and (ii) COVID-19 is known to have large effects on inequalityin many countries.
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Nepomuceno, Marília R., Vanessa di Lego, and Cássio M. Turra. Gender disparities in health at older ages and their consequences for well-being in Latin America and the Caribbean. Verlag der Österreichischen Akademie der Wissenschaften, June 2021. http://dx.doi.org/10.1553/populationyearbook2021.res2.1.

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Women live longer but can expect to spend more years in poorer health compared to men. In the context of population aging and declining gender ratios at older ages, there are increasing concerns about how this disadvantage in female health will affect well-being and sustainability, particularly in developing regions that are rapidly aging. Our study compares differences in health expectancies at older ages for men and women in order to assess gender disparities in health.We use data from the Survey on Health, Well-Being, and Aging in Latin America and the Caribbean to decompose the gender gap into total and age-specific mortality and disability effects in seven cities in the region. Our results show that at older ages, higher disability rates among women reduced the gender gap in healthy life expectancy by offsetting women’s mortality advantage. In addition, we find that women’s mortality advantage decreased almost systematically with age, which reduced the contribution of the mortality effect to the gender gap at older ages. Although the gender gap in health followed a similar pattern across the region, its decomposition into mortality and disability effects reveals that there was substantial variation among cities. Thus, across the region, the implications of the gender gap in health for well-being vary, and the policies aimed at reducing this gap should also differ.
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Bertoni, Eleonora, Gregory Elacqua, Luana Marotta, Matias Martínez, Humberto Santos, and Sammara Soares. Is School Funding Unequal in Latin America?: A Cross-country Analysis. Inter-American Development Bank, November 2020. http://dx.doi.org/10.18235/0002854.

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Public spending on education has increased significantly in Latin America over the last decades. However, less is known whether increased spending has been translated into a more equitable distribution of resources within countries in the region. This study addresses this gap by measuring the inequality in per-pupil spending between regions with different levels of socioeconomic status (SES) within five Latin American countries: Brazil, Chile, Colombia, Ecuador, and Peru. Results show that Brazil, a federal country, has the widest socioeconomic funding gap due to large inequalities in local revenues between high and low SES regions. However, the country's funding gap has narrowed over time. School funding in Colombia has become more regressive over time, but its gap is half the size of the one in Brazil. The distribution of school funding in Peru has changed over time from being regressive-benefiting the richest regions-to being progressive-benefiting the poorest regions. Education spending in Chile and in Ecuador are, on the other hand, consistently progressive. However, while the progressiveness of funding in Ecuador is driven by transfers targeted at disadvantaged rural areas, the funding formulas in Chile addresses socioeconomic inequalities beyond the rural-urban gap.
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Pang, Xiaoying, and Lawrence J. Rybarcyk. RF Gap Transformation in PARMILA. Office of Scientific and Technical Information (OSTI), November 2013. http://dx.doi.org/10.2172/1104902.

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Schoolderman, Ruurd, Bulent Bicer, and Adriana M. Valencia. Bridging Skills Gap in the Caribbean. Inter-American Development Bank, December 2017. http://dx.doi.org/10.18235/0000943.

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Bonet-Morón, Jaime Alfredo, and Jhorland Ayala-García. The territorial fiscal gap in Colombia. Bogotá, Colombia: Banco de la República, March 2017. http://dx.doi.org/10.32468/dtseru.251.

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