Relevant bibliographies by topics / InP/InGaP

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  1. Journal articles
  2. Dissertations / Theses
  3. Book chapters
  4. Conference papers

Academic literature on the topic 'InP/InGaP'

Author: Grafiati
Published: 4 June 2021
Last updated: 8 February 2022

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Journal articles on the topic "InP/InGaP"

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Joyner, C. H., A. G. Dentai, R. C. Alferness, L. L. Buhl, M. D. Divino, and W. C. Dautremont‐Smith. "InGaP/InP waveguides." Applied Physics Letters 50, no. 21 (1987): 1509–11. http://dx.doi.org/10.1063/1.97815.

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Kurtenbach, A., K. Eberl, and T. Shitara. "Nanoscale InP islands embedded in InGaP." Applied Physics Letters 66, no. 3 (1995): 361–63. http://dx.doi.org/10.1063/1.114213.

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Bortoleto, J. R. R., H. R. Gutiérrez, M. A. Cotta, J. Bettini, L. P. Cardoso, and M. M. G. de Carvalho. "Spatial ordering in InP/InGaP nanostructures." Applied Physics Letters 82, no. 20 (2003): 3523–25. http://dx.doi.org/10.1063/1.1572553.

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Walter, G., N. Holonyak, J. H. Ryou, and R. D. Dupuis. "Coupled InP quantum-dot InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructure diode laser operation." Applied Physics Letters 79, no. 20 (2001): 3215–17. http://dx.doi.org/10.1063/1.1416158.

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Pan, N., J. Carter, G. S. Jackson, et al. "Graded InGaP Schottky diodes on Si‐doped InP." Applied Physics Letters 60, no. 15 (1992): 1839–41. http://dx.doi.org/10.1063/1.107181.

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Byun, Hye Ryoung, Mee-Yi Ryu, Jin Dong Song, and Chang-Lyoul Lee. "Effect of an InGaP spacer layer on the luminescence properties of InP/InGaP quantum structures." Journal of the Korean Physical Society 66, no. 5 (2015): 811–15. http://dx.doi.org/10.3938/jkps.66.811.

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Varma, S., C. M. Reaves, V. Bressler-Hill, S. P. DenBaars, and W. H. Weinberg. "InP islands on InGaP/GaAs(001): island separation distributions." Surface Science 393, no. 1-3 (1997): 24–33. http://dx.doi.org/10.1016/s0039-6028(97)00231-8.

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Ren, F. "BCl3/N2 dry etching of InP, InAlP, and InGaP." Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 14, no. 3 (1996): 1758. http://dx.doi.org/10.1116/1.588553.

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Nekrasov, S. V., Yu G. Kusrayev, I. A. Akimov, V. L. Korenev, L. Langer, and M. Salewski. "Negative circular polarization dynamics in InP/InGaP quantum dots." Journal of Physics: Conference Series 741 (August 2016): 012189. http://dx.doi.org/10.1088/1742-6596/741/1/012189.

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Walter, G., N. Holonyak, J. H. Ryou, and R. D. Dupuis. "Room-temperature continuous photopumped laser operation of coupled InP quantum dot and InGaP quantum well InP–InGaP–In(AlGa)P–InAlP heterostructures." Applied Physics Letters 79, no. 13 (2001): 1956–58. http://dx.doi.org/10.1063/1.1405153.

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Dissertations / Theses on the topic "InP/InGaP"

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Gazoto, André Luís 1979. "Propriedades ótica e estrutural de pontos quânticos de InP embebidos em InGaP." [s.n.], 2004. http://repositorio.unicamp.br/jspui/handle/REPOSIP/276951.

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Orientador: Eliermes Arraes Meneses<br>Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin<br>Made available in DSpace on 2018-08-26T09:54:15Z (GMT). No. of bitstreams: 1 Gazoto_AndreLuis_M.pdf: 15242675 bytes, checksum: ac4c94e41838cf002e9c0e1f968e4b63 (MD5) Previous issue date: 2004<br>Resumo: Neste trabalho realizamos um estudo sobre a influência da espessura nominal do poço quântico de InP nas propriedades ótica e estrutural de pontos quânticos de InP crescidos sobre InGaP. Foram utilizadas técnicas de espectroscopia ótica como fotoluminescência
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Katmis, Asli Ugur. "Growth and characterization of InP/In0.48Ga0.52P quantum dots optimized for single-photon emission." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2013. http://dx.doi.org/10.18452/16696.

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In dieser Forschungsarbeit wird das selbstorganisierte Wachstum von InP/InGaP-Quantenpunkten (QP) sowie ihre optischen und strukturellen Eigenschaften untersucht. Die QP wurden auf GaAsgitterangepasstem InGaP gewachsen.Selbstorganisierte InP-QP werden mittels Gasquellen-Molekularstrahlepitaxie gewachsen, wobei die InP-Abscheidungsrate uber einen weiten Bereich variiert wird. Bei besonders geringer Wachstumsratevon rund 0,01 Atomlagen/s wird eine Flachendichte von 1 QP/μm2 erreicht. Die daraus resultierenden InP QP, konnen einzeln charakterisiert werden ohne vorher das Substrat lithografisch be
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Hatami, Fariba. "Indium phosphide quantum dots in GaP and in In 0.48 Ga 0.52 P." Doctoral thesis, Humboldt-Universität zu Berlin, Mathematisch-Naturwissenschaftliche Fakultät I, 2002. http://dx.doi.org/10.18452/14873.

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Im Rahmen dieser Arbeit wurden selbstorganisierte, verspannte InP-Quantenpunkte mittels Gasquellen-Molekularstrahlepitaxie hergestellt und deren strukturelle und optische Eigenschaften untersucht. Die Quantenpunkte wurden sowohl in InGaP-Matrix gitterangepasst auf GaAs-Substrat als auch in GaP-Matrix auf GaP-Substrat realisiert. Die starke Gitterfehlanpassung von 3,8% im InP/InGaP- bzw. 7,7% im InP/GaP-Materialsystem ermöglicht Inselbildung mittels des Stranski-Krastanow-Wachstumsmodus: Ab einer kritischen InP-Schichtdicke findet kein zweidimensionales, sondern ein dreidimensionales Wachstum
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Semtsiv, Mykhaylo. "InGaAs-AlAs and InGaAs-InGaP strain-compensated heterostructures for short wavelength intersubband transitions and lasers." Doctoral thesis, [S.l. : s.n.], 2004. http://deposit.ddb.de/cgi-bin/dokserv?idn=972710450.

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Wang, Chih-Kai, and 王致凱. "Fabrication of InGaP- and InP-Based Heterostructure Field-Effect Transistors." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/87477984945868425131.

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碩士<br>國立成功大學<br>微電子工程研究所碩博士班<br>90<br>In this thesis, a comparative study DC performances and temperature-dependent characteristics of InGaP- and InP-based HFETs is presented. First, three different catalytic metals (platinum (Pt), palladium (Pd) and aurum (Au)) are used as gate metals for the studied HFETs. Second, a comparison is made for metal-semiconductor and metal-oxide-semiconductor field-effect transistors. Third, a comparison between InGaP and InP materials as active layer is employed. The InGaP layer is widely used as an insulator to provide large gate-barrier height over the past ye
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Chen, Chang-Ju, and 陳昶儒. "Reactive Ion Etching of InP and InGaP using CH4/H2 Mixture." Thesis, 1993. http://ndltd.ncl.edu.tw/handle/12277641594538229874.

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碩士<br>國立交通大學<br>電子研究所<br>81<br>In this thesis, we report the reactive ion etching of InGaP and InP (including undoped, p and n+ type ) in CH4/H2 mixtures. The etch rate was measured as a function of etch time, rf power density, methane fraction,chamber pressure, and total flow rate. The relative fraction of methane and hydrogen is the most important parameter that controls the etch rate, polymer deposition rate, surface stoichiometry, and anisotropy. Both InP and InGaP have the maximum etch
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Yeh, Chia-Bin, and 葉嘉彬. "Reactive Ion Etching of GaAs, InP and InGaP with BCl3/SF6/Ar Mixtures." Thesis, 1994. http://ndltd.ncl.edu.tw/handle/23484652594160180713.

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碩士<br>國立交通大學<br>電子研究所<br>82<br>In this thesis, the investigation of Reactive Ion Etching ( RIE ) of GaAs, InP and InGaP with BCl3/SF6/Ar mixtures is reported. The etch rate was measured in order to find the dependence on RF power density, pressure, total gas flow rate and the ratio of each gas in the mixtures. The morphology of etched surfaces and self-bias were also in our concern. The ratio of BCl3 and SF6 in gas mixtures has significant influence on etch rate. Etching with both gases is
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WU, YI-CHEN, and 吳宜蓁. "Investigation of Electrical Properties in Novel InGaP/GaAs/GaAsBi and InP/InGaAs Heterostructure Transistors." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/98626813940332651379.

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博士<br>國立高雄大學<br>電機工程學系碩博士班<br>105<br>Heterostructure transistors based on III-V compound semiconductor material systems have been widely applied in digital and microwave circuit applications due to their excellent high-speed and microwave performances combined with high current driving capability. In this dissertation, the InGaP/GaAs/GaAsBi- and InP/InGaAs-based heterostructure transistors are successfully fabricated and studied by wet selectively etching process and two-dimensional analysis. The improved device structures, including a novel heterostructure bipolar and field-effect transistors
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Wang, Che-ming, and 王則閔. "Linearity Improvement of InGaP/GaAs HBTs and Characterization of InP-based Type-I/II HBTs." Thesis, 2007. http://ndltd.ncl.edu.tw/handle/9q3hpp.

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博士<br>國立中央大學<br>電機工程研究所<br>96<br>Heterojunction Bipolar Transistors (HBTs) proposed to improve the emitter efficiency by base-emitter (BE) heterojunction in 1958s. The GaAs-based and InP-based HBTs were implemented as the material growth techniques of MOCVD and MBE became mature in 1980s. In recent, the HBTs are widly applicated in the power amplifier of wireless communication system. The nonlinear characteristic of HBTs is an important point that affects power performance of circuit design. The four major sources of HBTs nonlinearity and the large-signal swing related nonlinear factors are di
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Wang, TJ, та 王泰鈞. "Effect of a tensile-strained InGaP electron stopper layer for 1.3-μm InGaAsP/InP strained multiple quantum well lasers". Thesis, 2006. http://ndltd.ncl.edu.tw/handle/65695049651071740267.

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碩士<br>國立彰化師範大學<br>光電科技研究所<br>94<br>In this thesis, the effect of the different position of a tensile-strained InGaP electron stopper layer (ESL) on 1.3-μm InGaAsP/InP compressive-strained multiple-quantum-well (MQW) ridge waveguide laser diodes (LDs) was investigated. InGaAsP/InP material is the most popular material for fabricating light sources in long-haul fiber communication applications. However, InGaAsP/InP LDs show poor temperature characteristics partly owing to large Auger recombination rates existed in this low bandgap material system and partly owing to poor electron confinement res
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Book chapters on the topic "InP/InGaP"

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Wehmann, H. H., D. Fehly, D. Wüllner, P. Bönsch, A. Schlachetzki, and R. Kúdela. "GaAs and InP on Si with InGaP Buffer Layers." In Heterostructure Epitaxy and Devices — HEAD’97. Springer Netherlands, 1998. http://dx.doi.org/10.1007/978-94-011-5012-5_23.

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Schmidt, O. G., M. O. Lipinski, Y. M. Manz, H. Heidemeyer, W. Winter, and K. Eberl. "Lasers based on self-assembled InAs/GaAs and InP/InGaP quantum dots." In Springer Proceedings in Physics. Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-59484-7_169.

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Yamaguchi, Masafumi. "High-Efficiency GaAs-Based Solar Cells." In Indium [Working Title]. IntechOpen, 2020. http://dx.doi.org/10.5772/intechopen.94365.

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The III-V compound solar cells represented by GaAs solar cells have contributed as space and concentrator solar cells and are important as sub-cells for multi-junction solar cells. This chapter reviews progress in III-V compound single-junction solar cells such as GaAs, InP, AlGaAs and InGaP cells. Especially, GaAs solar cells have shown 29.1% under 1-sun, highest ever reported for single-junction solar cells. In addition, analytical results for non-radiative recombination and resistance losses in III-V compound solar cells are shown by considering fundamentals for major losses in III-V compound materials and solar cells. Because the limiting efficiency of single-junction solar cells is 30-32%, multi-junction junction solar cells have been developed and InGaP/GaAs based 3-junction solar cells are widely used in space. Recently, highest efficiencies of 39.1% under 1-sun and 47.2% under concentration have been demonstrated with 6-junction solar cells. This chapter also reviews progress in III-V compound multi-junction solar cells and key issues for realizing high-efficiency multi-junction cells.
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Dong, Shaoguang, Kanghua Chen, Guojie Chen, and Xin Chen. "Solar Cells with InGaN/GaN and InP/InGaAsP and InGaP/GaAs Multiple Quantum Wells." In Solar Cells - New Approaches and Reviews. InTech, 2015. http://dx.doi.org/10.5772/58899.

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"InGaP/GaAs Tandem Solar Cells." In InP and Related Compounds. CRC Press, 2000. http://dx.doi.org/10.1201/9781482282986-23.

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Conference papers on the topic "InP/InGaP"

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Aihara, T., T. Tayagaki, T. Nakamoto, Y. Okano, and T. Sugaya. "Effects of Front InGaP Layer Thickness in InP/InGaP Quantum Dot Solar Cells." In 2018 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2018. http://dx.doi.org/10.7567/ssdm.2018.f-6-04.

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Baumann, V., F. Stumpf, S. Kremling, et al. "Site-controlled growth of InP/InGaP quantum dots." In 2012 24th International Conference on Indium Phosphide & Related Materials (IPRM). IEEE, 2012. http://dx.doi.org/10.1109/iciprm.2012.6403373.

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Aihara, T., T. Tayagaki, Y. Nagato, Y. Okano, and T. Sugaya. "Demonstration of InP/InGaP Quantum Dot Solar Cells." In 2016 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2016. http://dx.doi.org/10.7567/ssdm.2016.g-5-03.

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Rafailov, Edik U., Andrey B. Krysa, Arkady Major, Shirin Ghanbari, and Ksenia A. Fedorova. "InP/InGaP quantum-dot SESAM mode-locked Alexandrite laser." In Solid State Lasers XXVII: Technology and Devices, edited by W. Andrew Clarkson and Ramesh K. Shori. SPIE, 2018. http://dx.doi.org/10.1117/12.2284480.

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Ghanbari, S., K. A. Fedorova, A. B. Krysa, E. U. Rafailov, and A. Major. "Femtosecond Alexandrite Laser with InP/InGaP Quantum-Dot Saturable Absorber." In 2018 International Conference Laser Optics (ICLO). IEEE, 2018. http://dx.doi.org/10.1109/lo.2018.8435562.

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Storozhenko, Ihor, Marina Kaydash, Oleksandr Yaroshenko, and Yuri Arkusha. "Wide-Band Gunn Diodes Based on Graded-Gap InGaP/ InP As." In 2018 9th International Conference on Ultrawideband and Ultrashort Impulse Signals (UWBUSIS). IEEE, 2018. http://dx.doi.org/10.1109/uwbusis.2018.8520161.

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Dey, Krishanu, and T. R. Lenka. "Simulation of high efficiency InGaP/InP tandem solar cells under flat plate and concentrator conditions." In 2017 International conference on Microelectronic Devices, Circuits and Systems (ICMDCS). IEEE, 2017. http://dx.doi.org/10.1109/icmdcs.2017.8211717.

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Tayagaki, Takeshi, Yuki Nagato, Yoshinobu Okano, and Takeyoshi Sugaya. "A proposal for wide-bandgap intermediate-band solar cells using type-II InP/InGaP quantum dots." In 2016 IEEE 43rd Photovoltaic Specialists Conference (PVSC). IEEE, 2016. http://dx.doi.org/10.1109/pvsc.2016.7749569.

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Aihara, T., T. Tayagaki, Y. Nagato, Y. Okano, and T. Sugaya. "Investigation of the Open-Circuit Voltage in the Wide-Bandgap InGaP-based InP Quantum Dot Solar Cells." In 2017 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2017. http://dx.doi.org/10.7567/ssdm.2017.c-3-03.

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Sugaya, Takeyoshi, and Takeshi Tayagaki. "Growth of Type-II InP quantum dots in InGaP matrix by using solid-source molecular beam epitaxy for intermediate-band solar cells." In 2016 Compound Semiconductor Week (CSW) [Includes 28th International Conference on Indium Phosphide & Related Materials (IPRM) & 43rd International Symposium on Compound Semiconductors (ISCS)]. IEEE, 2016. http://dx.doi.org/10.1109/iciprm.2016.7528560.

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