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Academic literature on the topic 'InP nanowire'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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Journal articles on the topic "InP nanowire"

SALIMATH, AKSHAYKUMAR, and BAHNIMAN GHOSH. "SPIN RELAXATION IN InP AND STRAINED InP NANOWIRES." SPIN 04, no. 03 (September 2014): 1450003. http://dx.doi.org/10.1142/s2010324714500039.

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In this paper, we employ semiclassical Monte Carlo approach to study spin polarized transport in InP and strained InP nanowires on GaAs substrate. Due to higher spin relaxation lengths, InP is being researched as suitable III–V material for spintronics related applications. Spin relaxation in InP channel is as a result of D'yakonov–Perel (DP) relaxation and Elliott–Yafet (EY) relaxation. We have considered injection polarization along z-direction and the magnitude of ensemble averaged spin variation is studied along the x-direction i.e., along transport direction. The effect of strain on various scattering rates and spin relaxation length is studied. We then present the effect of variation of nanowire width on spin relaxation length for the case of both strained and unstrained InP nanowire. The wire cross-section is varied between 4 × 4 nm2 and 10 × 10 nm2.

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Zhang, Guoqiang, Masato Takiguchi, Kouta Tateno, Takehiko Tawara, Masaya Notomi, and Hideki Gotoh. "Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature." Science Advances 5, no. 2 (February 2019): eaat8896. http://dx.doi.org/10.1126/sciadv.aat8896.

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Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach, which is technologically important in optical fiber communication systems, still remain challenging. Here, we report telecom-band single nanowire lasers operating at room temperature based on multi-quantum-disk InP/InAs heterostructure nanowires. Transmission electron microscopy studies show that highly uniform multi-quantum-disk InP/InAs structure is grown in InP nanowires by self-catalyzed vapor-liquid-solid mode using indium particle catalysts. Optical excitation of individual nanowires yielded lasing in telecom band operating at room temperature. We show the tunability of laser wavelength range in telecom band by modulating the thickness of single InAs quantum disks through quantum confinement along the axial direction. The demonstration of telecom-band single nanowire lasers operating at room temperature is a major step forward in providing practical integrable coherent light sources for optoelectronics and data communication.

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Miao, Guo Qing, and Zhi Wei Zhang. "Effect of Substrate Orientation and PH₃ Thermal Annealing Treatment on Catalyst-Free InP Nanowires." Advanced Materials Research 716 (July 2013): 84–88. http://dx.doi.org/10.4028/www.scientific.net/amr.716.84.

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Catalyst-free InP nanowires were grown on Si (100) and Si (111) substrates by metal organic chemical vapor deposition and the morphology, crystal structure, and optical properties of the nanowires are investigated. X-ray diffraction results show two peaks of InP (111) and InP (220) in the spectra. Two more peaks of InP (200) and InP (311) are observed if PH3thermal annealing is performed on the sample for 15 minutes after nanowire growth is completed. The InP (220), InP (311), and InP (200) peaks originate from InP crystal formation on top of the nanowires; only the InP (111) peak originates from the InP nanowires. Finally, the temperature dependence of the PL peak positions of InP nanowires grown on Si (100) and InP substrate are measured.

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Rigutti, Lorenzo, Andres De Luna Bugallo, Maria Tchernycheva, Gwenole Jacopin, François H. Julien, George Cirlin, Gilles Patriarche, Damien Lucot, Laurent Travers, and Jean-Christophe Harmand. "Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy." Journal of Nanomaterials 2009 (2009): 1–7. http://dx.doi.org/10.1155/2009/435451.

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We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

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Greenberg, Ya’akov, Alexander Kelrich, Shimon Cohen, Sohini Kar-Narayan, Dan Ritter, and Yonatan Calahorra. "Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell." Nanomaterials 9, no. 9 (September 16, 2019): 1327. http://dx.doi.org/10.3390/nano9091327.

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Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal–organic molecular beam epitaxy of bent InP/InAs core/shell nanowires brought by precursor flow directionality in the growth chamber. We observe the increase of bending with decreased core diameter. We further analyze the composition of a single nanowire and show through supporting finite element simulations that strain accommodation following the lattice mismatch between InP and InAs dominates nanowire bending. The simulations show the interplay between material composition, shell thickness, and tapering in determining the bending. The simulation results are in good agreement with the experimental bending curvature, reproducing the radius of 4.3 µm (±10%), for the 2.3 µm long nanowire. The InP core of the bent heterostructure was found to be compressed at about 2%. This report provides evidence of shape control and strain engineering in nanostructures, specifically through the exchange of group-V materials in III–V nanowire growth.

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Резник, Р. Р., Г. Э. Цырлин, И. В. Штром, А. И. Хребтов, И. П. Сошников, Н. В. Крыжановская, Э. И. Моисеев, and А. Е. Жуков. "Когерентный рост нитевидных нанокристаллов InP/InAsP/InP на поверхности Si(111) при молекулярно-пучковой эпитаксии." Письма в журнал технической физики 44, no. 3 (2018): 55. http://dx.doi.org/10.21883/pjtf.2018.03.45579.16991.

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AbstractResults obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.

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Jafari Jam, Reza, Axel R. Persson, Enrique Barrigón, Magnus Heurlin, Irene Geijselaers, Víctor J. Gómez, Olof Hultin, Lars Samuelson, Magnus T. Borgström, and Håkan Pettersson. "Template-assisted vapour–liquid–solid growth of InP nanowires on (001) InP and Si substrates." Nanoscale 12, no. 2 (2020): 888–94. http://dx.doi.org/10.1039/c9nr08025b.

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We report on the synthesis of InP nanowire arrays on (001) InP and Si substrates using template-assisted vapour–liquid–solid growth. We also demonstrate growth of InP nanowire p–n junctions and InP/InAs/InP nanowire heterostructures on (001) InP substrates.

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Molina, Sergio I., María Varela, Teresa Ben, David L. Sales, Joaquín Pizarro, Pedro L. Galindo, David Fuster, Yolanda González, Luisa González, and Stephen J. Pennycook. "A Method to Determine the Strain and Nucleation Sites of Stacked Nano-Objects." Journal of Nanoscience and Nanotechnology 8, no. 7 (July 1, 2008): 3422–26. http://dx.doi.org/10.1166/jnn.2008.123.

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We determine the compositional distribution with atomic column resolution in a horizontal nanowire from the analysis of aberration-corrected high resolution Z-contrast images. The strain field in a layer capping the analysed nanowire is determined by anisotropic elastic theory from the resulting compositional map. The reported method allows preferential nucleation sites for epitaxial nanowires to be predicted with high spatial resolution, as required for accurate tuning of desired optical properties. The application of this method has been exemplified in this work for stacked InAs(P) horizontal nanowires grown on InP separated by 3 nm thick InP layers, but we propose it as a general method to be applied to other stacked nano-objects.

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Hiruma, K., K. Tomioka, P. Mohan, L. Yang, J. Noborisaka, B. Hua, A. Hayashida, et al. "Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy." Journal of Nanotechnology 2012 (2012): 1–29. http://dx.doi.org/10.1155/2012/169284.

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The fabrication of GaAs- and InP-based III-V semiconductor nanowires with axial/radial heterostructures by using selective-area metal-organic vapor-phase epitaxy is reviewed. Nanowires, with a diameter of 50–300 nm and with a length of up to 10 μm, have been grown along the〈111〉B or〈111〉A crystallographic orientation from lithography-defined SiO2mask openings on a group III-V semiconductor substrate surface. An InGaAs quantum well (QW) in GaAs/InGaAs nanowires and a GaAs QW in GaAs/AlGaAs or GaAs/GaAsP nanowires have been fabricated for the axial heterostructures to investigate photoluminescence spectra from QWs with various thicknesses. Transmission electron microscopy combined with energy dispersive X-ray spectroscopy measurements have been used to analyze the crystal structure and the atomic composition profile for the nanowires. GaAs/AlGaAs, InP/InAs/InP, and GaAs/GaAsP core-shell structures have been found to be effective for the radial heterostructures to increase photoluminescence intensity and have enabled laser emissions from a single GaAs/GaAsP nanowire waveguide. The results have indicated that the core-shell structure is indispensable for surface passivation and practical use of nanowire optoelectronics devices.

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GAO, Q., H. J. JOYCE, S. PAIMAN, J. H. KANG, H. H. TAN, Y. KIM, L. M. SMITH, et al. "III-V COMPOUND SEMICONDUCTOR NANOWIRES FOR OPTOELECTRONIC DEVICE APPLICATIONS." International Journal of High Speed Electronics and Systems 20, no. 01 (March 2011): 131–41. http://dx.doi.org/10.1142/s0129156411006465.

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GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si ) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB , can also be engineered by carefully controlling the V/III ratio and catalyst size.

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Dissertations / Theses on the topic "InP nanowire"

Saj, Damian, and Izabela Saj. "Nanowire-based InP solar cell materials." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-19455.

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In this project, a new type of InP solar cell was investigated. The main idea is that light is converted to electrical current in p-i-n photodiodes formed in thin InP semiconductor nanowires epitaxially grown on an InP substrate. Two different types of samples were investigated. In the first sample type (series C03), the substrate was used as a common p-type electrode, whereas a short p-segment was included in all nanowires for the second sample type (B07). Current – voltage (I-V) characteristics with and without illumination were measured, as well as spectrally resolved photocurrents with and without bias. The main conclusion is that the p-i-n devices showed good rectifying behavior with an onset in photocurrent that agrees with the corresponding energy band gap of InP. An interesting observation was that in series B07 (with included p-segments) the photocurrent was determined by the band gap of hexagonal Wurtzite crystal structure, whereas series C03 (without p-segments) displayed a photocurrent dominated by the InP substrate which has a Zincblende crystal structure. We found that the overall short-circuit current was ten as large for the latter sample, stressing the importance of the substrate as a source of photocurrent.

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Anufriev, Roman. "Optical properties of InAs/InP nanowire heterostructures." Thesis, Lyon, INSA, 2013. http://www.theses.fr/2013ISAL0133/document.

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Ce travail de thèse porte sur l’étude des propriétés optiques de nanofils InP et d’hétérostructures nanofils InAs/InP épitaxiés sur substrat silicium. Ce travail de thèse a été réalisé principalement dans le cadre du projet ANR «INSCOOP»
This thesis is focused upon the experimental investigation of optical properties of InAs/InP NW heterostructures by means of photoluminescence (PL) spectroscopy. First, it was demonstrated that the host-substrate may have significant impacts on the optical properties of pure InP NWs, as due to the strain, created by the difference in the LTECs of the NWs and the host-substrate, as due to some other surface effects. Next, the optical properties of such nanowire heterostructures as quantum rod (QRod) and radial quantum well (QWell) NWs were investigated. The features of obtained spectra were explained using theoretical simulation of similar NW heterostructures. The polarization properties of single InP NWs, InAs/InP QWell-NWs, InAs/InP QRod-NWs and ensemble of the InAs well ordered NWs were studied at different temperatures. Further, we report on the evidences of the strain-induced piezoelectric field in WZ InAs/InP QRod-NWs. Finally, PL QE of NW heterostructures and their planar analogues are measured by means of a PL setup coupled to an integrating sphere. In general, the obtained knowledge of the optical and mechanical properties of pure InP NWs and InAs/InP NW heterostructures will improve understanding of the electrical and mechanical processes taking place in semiconductor NW heterostructures and will serve for the fabrication of future nanodevice applications

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Hajji, Maryam. "A comparative study of Nanowire-based InP and Planar ITO/InP Photodetectors." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2011. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-15589.

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Photodetectors are a kind of semiconductor devices that convert incoming light to an electrical signal. Photodetectors have different applications in sensors and fiber optic communication systems, and medical diagnosis etc. In this project Fourier Transform Infrared (FTIR) Spectroscopy is used to investigate a new version of photodiodes for near-infrared radiation that is based on self-assembled semiconductor nanowires (NWs) which are grown directly on the substrate without any epi-layer. The spectrally resolved photocurrent (at different applied biases) and IV curves (in darkness and illumination) for different temperatures have been studied, respectively. The thesis work also includes a comparison to a planar photodetector based on Indium Tin Oxide (ITO) deposited directly on an InP substrate.

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MALEKRAH, MEHDI. "Electrical and Optical Charactristics of InP Nanowire Photodetectors." Thesis, Halmstad University, MPE-lab, 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-4835.

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In this project Fourier Transform Infrared Spectroscopy is used to investigate a new kind of photodiode that is based on nanowires. The photo current and I-V curves for different temperatures, different applied biases, in darkness and illumination condition have been studied. The experiment was conducted in the temperature range from 78 K (-195ºC) to 300 K (27ºC). These photo diodes are designed to work on NIR wavelengths. The results show some excellent properties, such as high break down voltage, and that is an important advantage for photo detectors, low and constant reverse saturation current (Is). The results show some defects, most of them come from fabrication. The design of the sample is also discussed.

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Ngo, Tuan Nghia, and Irina Zubritskaya. "Electrical and Optical Characterization of InP Nanowire Ensemble Photodetectors." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-17457.

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Photodetectors are semiconductor devices that can convert optical signals into electrical signals. There is a wide range of photodetector applications such as fiber optics communication, infrared heat camera sensors, as well as in equipment used for medical and military purposes. Nanowires are thin needle-shaped structures made of semiconductor materials, e.g. gallium arsenide (GaAs), indium phosphide (InP) or silicon (Si). Their small size, well-controlled crystal structure and composition as well as the possibility to fabricate them monolithically on silicon make them ideally suited for sensitive photodetectors with low noise. In this project, Fourier Transform Infrared (FTIR) Spectroscopy is used to investigate the optical characteristics of InP nanowire-based PIN photodetectors. The corresponding electrical characteristics are also measured using very sensitive instrumentation. A total of 4 samples consisting of processed nanowires with 80 nm diameter but different density and length have been examined. The experiments were conducted from 78K (-196oC) to room temperature 300K (27oC). The spectrally resolved photocurrent and current-voltage (IV) curves (in darkness & under illumination) for different temperatures have been studied and analyzed. The samples show excellent IV performance with very low leakage currents. The photocurrent scales with the number of nanowires, from which we conclude that most photocurrent is generated in the substrate. Spectrally resolved photocurrent data, recorded at different temperatures, display strong absorption in the near-infrared region with interesting peaks that reveal the underlying optical processes in the substrate and nanowires, respectively. The nature of the absorption peaks is discussed in detail. This study is an important step towards integration of optically efficient III-V nanoscale devices on cheap silicon substrates for applications e.g. on-chip optical communication and solar cells for energy harvesting.

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Dawei, Jiang. "Electrical and optical characterization of InP nanowire-based photodetectors." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2014. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-25733.

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This thesis deals with electrical and optical characterization of p+i–n+ nanowire-based photodetectors/solar cells. I have investigated their I-V performance and found that all of them exhibit a clear rectifying behavior with an ideality factor around 2.2 at 300K. used Fourier transform infrared spectroscopy to extract their optical properties. From the spectrally resolved photocurrent data, I conclude that the main photocurrent is generated in the i-segment of the nanowire (NW) p-i-n junctions, with negligible contribution from the substrate. I also used a C-V technique to investigate the impurity/doping profiles of the NW p+-i-n+ junction. The technique has been widely used for investigations of doping profiles in planar p-n junctions, in particular with one terminal (n or p) highly doped. To verify the accuracy of the technique, I also used a planar Schottky sample with an already known doping profile for a test experiment. The result is very similar to the actual data. When we used the technique to investigate the doping level in the NWs photodetectors grown on InP substrates, the results show a very high capacitance above 800pF which most likely is due to the influence of the parasitic capacitance from the insulating layer of SiO2. Thus, a new sample design is required to investigate the doping profiles of NWs.

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Amin, Mohammed, and Md Obaidul Alam. "Electrical and optical characteristics of InP interband nanowire infrared photodetectors." Thesis, Högskolan i Halmstad, Sektionen för Informationsvetenskap, Data– och Elektroteknik (IDE), 2010. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-6219.

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We have investigated two devices for detection of radiation, typically in the infrared range, Photons are absorbed in an active region of semiconductor devices such that the absorption induces inter band electronic transitions and generate photo-excited charge carriers. A photocurrent is generated between the conducting contacts through the active region of the devices. We worked on infrared photodectors based on nanowires. This type of photodectors can be used for optical communication and to detect atmospheric pollution by absorption of the polluting molecules in the infrared region (0.7µm-1µm). In this project we have used Fourier transform infrared spectroscopy to study and compared the photoresponse of two different types of interband nanowire infrared photodetectors 8samples 6080 and 6074). Fourier Transform infrared (FTIR) spectroscopy is a measurement technique that allows one to record infrared spectra in all wavelengths at then same time. The basic task was to compare and analyse the electrical and optical characteristics of these two detectors at different temperatures (78K-300K) corresponding to the wavelength.

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Zhao, Guiping. "Fabrication and characterization of nanowire arrays on InP(100) surfaces." Thesis, University of Newcastle Upon Tyne, 2007. http://hdl.handle.net/10443/964.

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This work investigates the technique of mass fabrication of nanowires on semiconductor InP (100) surfaces by low energy Ar+ ion beam bombardment. Systematic investigation shows that under some crucial experimental parameters, nanowire arrays of regular periodicity can be produced. An ambient Atomic Force Microscope was used in contact mode to examine the morphology of the irradiated InP surfaces. The chemical composition of the irradiated samples was characterized by X-ray Photoelectron Spectroscopy (XPS). The electronic structure of the fabricated nanowire arrays was jointly explored by Scanning Tunnelling Spectroscopy and XPS. The research shows that In enriched ripples and nanowires form under prolonged irradiation by Ar+ ions due to preferential sputtering of P from InP under grazing ion incident angle above some crucial irradiation ion dose. A model of mergence from tailed cones is proposed to account for the formation of these ripples and nanowires. The drive to the formation of periodic ripples and nanowires is believed to be stress-field induced self-organisation of strained cones. The cone-mergence model is a combination of the model of stress-field induced self-organization and the model of ripple topography by Bradley and Harper (BH). The research proposes that the mobility of atoms on the corresponding solid surfaces under ion bombardment decides whether the surface morphology is generated by the stress-field, the BH, or a combination of the two models. Monte-Carlo simulation was used to evaluate the effect of surface damage and preferential sputtering of P from InP and N from Si3N4. The calculations predict that P and N can be preferentially sputtered from InP and Si3N4 surfaces.

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Singaravelu, Praveen Kumar, and Tawhidul Alam Mohammad. "Electrical and Optical Characterization of InAsP/InP Nanowire-Based Avalanche Photodetectors." Thesis, Högskolan i Halmstad, Fotonik, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-30144.

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The availability of new manufacturing methodology in solid state physics makes it possible to grow nano-photonic devices for better performance and unique properties. In this thesis work, we use I-V and FTIR spectroscopy to study the electrical and optical properties of InAsP/InP nanowire-based array avalanche photodetectors for near infrared applications. Measurements are performed at 300K and 5K for different applied biases under darkness and illumination conditions. I-V curves are plotted to understand the charge carrier transport in nanowire photodetectors and also to improve the device fabrication. I-V characteristics display non-optimal diode properties with large dark leakage currents. From spectrally resolved photocurrent measurements, peaks appear at photon energies of 1.34eV and 1.4eV respectively, corresponding to the bandgap of zinc blende (ZB) and wurtzite (WZ) InP. An additional photocurrent peak at 1.25eV agrees with the bandgap of the included InAsP segments. The Schottky-like contacts present at the top of the nanowires most likely generate additional photocurrent at higher photon energies. No breakdown effect is observed for the array devices. Complementary single-nanowire devices indicate an avalanche breakdown effect at VR=-35V.

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Raval, Divya. "I-V and Optical Characterization of InP/InAsP Quantum Disc-in-Nanowire Infrared Photodetectors." Thesis, Högskolan i Halmstad, Akademin för informationsteknologi, 2019. http://urn.kb.se/resolve?urn=urn:nbn:se:hh:diva-40162.

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Photodetectors are semiconductor devices capable of converting optical signals into electrical signals. There is a wide range of applications for photodetectors such as fiber optics communication, infrared heat camera sensors, as well as in medical and military equipment.Nanowires are thin needle-shaped structures consisting of semiconductor materials such as gallium arsenide (GaAs), indium phosphide (InP) or silicon (Si). They are ideally suited for sensitive photodetectors with low noise due to their small size, well-controlled crystal structure, and composition tunability, as well as the possibility to fabricate them monolithically on silicon.In this thesis, Fourier Transform Infrared (FTIR) Spectroscopy was used to investigate the optical characteristics of InP nanowire-based n+-i-n+ photodetectors with 20 embedded InAsP quantum discs in each InP nanowire. The spectrally resolved photocurrent was measured and analyzed at different angles of incidence. Also, detailed current-voltage characteristics in dark and under illumination were recorded and analyzed.Summarized, the samples showed very good I-V performance with low dark leakage currents. The photocurrent scales with the numbers of nanowires, from which we conclude that most of the photocurrent is generated in the nanowires. Spectrally resolved photocurrent data, recorded at room-temperature, shows strong absorption in the near-infrared region with interesting peaks that reveal, the underlying optical processes in the substrate and nanowires.

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Books on the topic "InP nanowire"

Deshpande, U. P., T. Shripathi, and A. V. Narlikar. Iron-oxide nanostructures with emphasis on nanowires. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.23.

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This article examines the properties of iron-oxide nanostructures, with particular emphasis on nanowires. It begins with an overview of iron-oxide nanostructures and nanowires, followed by a discussion of the synthesis of aligned ?-Fe2O3 nanowires and nanosheets by a simple thermal oxidation route. It then describes the preferential bending of [110] grown ?-Fe2O3 nanowires about the C-axis and quantitative estimation of nanowire alignment using X-ray diffraction and grazing incidence X-ray diffraction. It also considers the growth mechanism of ?-Fe2O3 nanowires and nanosheets, different nanowire morphologies, rotational slip in ?-Fe2O3 nanosheets, and the influence of local environment and substrate microstructure on nanowire growth.

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Kirczenow, George. Molecular nanowires and their properties as electrical conductors. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.4.

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This article describes the properties of molecular nanowires as electrical conductors. It begins by defining a molecular nanowire and describing a specific example of a molecular nanowire, along with the concept of molecular nanowire self-assembly. It then considers how molecular nanowires are realized in the laboratory as well as the relationships between these methodologies, the systems that are produced and some experiments being performed on them. It also looks at the different kinds of molecules, electrodes and linkers out of which molecular nanowires are being or may be constructed; the Landauer approach to electrical conduction in molecular nanowires; the principles and limitations of ab-initio and semi-empirical modelling of molecular nanowires in the context of electrical conduction; and four specific experimental systems and the extent to which their observed behavior has been understood theoretically. The article concludes with a summary of key issues for the future development of the field.

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Koblischka, M. R. Growth and Characterization of HTSc Nanowires and Nanoribbons. Edited by A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.11.

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This article describes the fabrication of high-temperature superconducting nanowires and their characterization by magnetic and electric transport measurements. In the literature, nanowires of high-temperature superconductors (HTSc) are obtained by means of lithography, using thin film material as a base. However, there are two main problems with this approach: first, the substrate often influences the HTSc nanowire, and second, only electric transport measurements can be performed. This article explains how nanowires and nanobelts of high-temperature superconducting cuprates can be prepared by the template method and by electrospinning. It also considers the possibilities for employing substrate-free HTSc nanowires as building blocks to realize new, nanoporous bulk superconducting materials for a variety of applications.

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Shiraishi, K., and T. Nakayama. Role of computational sciences in Si nanotechnologies and devices. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.1.

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This article discusses the role of computational sciences in the fabrication of silicon nanotechnologies and devices, with particular emphasis on new scientific findings that offer great insight into such devices. It first considers how the present Si technology trend is stimulated by scientific knowledge, focusing on the potential of complimentary metaloxide semiconductor (CMOS) technology and the importance of understanding the atomisticprocess of Si thermal oxidation. It then discusses key knowledge for Si nanodevices obtainedby computational science, paying attention to the microscopic process of Si oxidation and the curious properties of high-k gate dielectrics. It also describes the possibility of Si nanowire channels as an example of computational-science-guided channel engineering and concludes with an assessment of the future trend of Si nanotechnologies driven by computational science, including Si nanowires, GaAs nanoWires, and carbon nanotubes.

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Grove-Rasmussen, K. Hybrid Superconducting Devices Based on Quantum Wires. Edited by A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.16.

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This article reviews the experimental progress in hybrid superconducting devices based on quantum wires, in the form of semiconductor nanowires or carbon nanotubes, which are coupled to superconducting electrodes. It also presents a series of recent examples which illustrate the key phenomena that have allowed detailed investigations of important scenarios, including individual impurities on superconductors and proximitized systems that may hold Majorana quasiparticles. After describing experimental aspects of hybrid devices, including materials and fabrication techniques, the article considers superconducting junctions with normal quantum dots (QDs). It then turns to experiments on superconductivity-enhanced QD spectroscopy, sub-gap states in hybrid QDs, and non-local signals in Cooper pair splitter devices. Finally, it discusses the growth of epitaxial semiconductor–superconductor nanowire hybrids.

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Ansermet, J. Ph. Spintronics with metallic nanowires. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533060.013.3.

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This article focuses on spintronics with metallic nanowires. It begins with a review of the highlights of spintronics research, paying attention to the very important developments accomplished with tunnel junctions. It then considers the effect of current on magnetization before discussing spin diffusion and especially spin-dependent conductivities, spin-diffusion lengths, and spin accumulation. It also examines models for spin-polarized currents acting on magnetization, current-induced magnetization switching, and current-driven magnetic excitations. It concludes with an overview of resonant-current excitations, with emphasis on spin-valves and tunnel junctions as well as resonant excitation of spin-waves, domain walls and vortices. In addition, the article reflects on the future of spintronics, citing in particular the potential of the spin Hall effect as the method of generating spin accumulation, free of charge accumulation.

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Pirota, Kleber Roberto, Angela Knobel, Manuel Hernandez-Velez, Kornelius Nielsch, and Manuel Vázquez. Magnetic nanowires: Fabrication and characterization. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533053.013.22.

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This article describes the fabrication and characterization of magnetic nanowires, focusing on the magnetic properties of patterned arrays of metallic magnetic nanowires electrodeposited into the pores of anodized-alumina membranes. It also discusses the complex magnetization processes, both in isolated nanowires and in collectively patterned arrays. After providing an overview of the state-of-the-art on fabrication techniques of nanowires, the article considers the microstructure of magnetic nanowires and the magnetic properties of single nanowires. It then examines the collective behavior of arrays where the interactions among the magnetic entities play an important role, along with the transport properties of magnetic nanowires, the temperature-dependent effects (such as magnetoelastic-induced anisotropy), and the dynamic properties of magnetization such as ferromagnetic resonance characteristics and spin-wave excitations in ferromagnetic nanowires. Finally, it presents an overview of future research directions.

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Fernandez-Serra, M. V., and X. Blase. Electronic and transport properties of doped silicon nanowires. Edited by A. V. Narlikar and Y. Y. Fu. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780199533046.013.2.

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This article describes a number of theoretical works and methods dedicated to the analysis of the atomic and electronic structure, doping properties and transport characteristics of silicon nanowires (SiNWs). The goal is to show how quantum confinement and dimensionality effects can intrinsically change the behavior of SiNWs as compared to their bulk and thin film counterparts. The article begins with a review of work done on surface reconstructions and electronic structure of SiNWs as a function of system doping and passivation. It then considers the problem of doping in SiNWs as well as the methodology typically used to analyze the problems of transport. It also discusses the electronic transport properties of SiNWs as a function of dopant type, along with their chemical functionalization. Finally, it demonstrates how surface dangling-bond defects trap the impurities in SiNWs and neutralize them.

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Weides, M. P. Barriers in Josephson Junctions: An Overview. Edited by A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.15.

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This article considers Josephson junction barriers, focusing on barriers made from insulators, metals, semiconductors, magnets, and nanowires. The main characteristic of Josephson junctions is the local reduction or even suppression of the critical current in the barrier. These barriers affect the static and dynamics properties of Josephson junctions, including coupling strength, ground state, phase damping, and tunability of the critical current. The article first provides an overview of the fundamental physics of Josephson junctions, with particular emphasis on the Josephson effect, before describing the properties of two coupled superconductors. It then discusses tunnel barriers, metallic barriers, semiconducting barriers, and magnetic barriers.

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Li, Y. Y., and J. F. Jia. Topological Superconductors and Majorana Fermions. Edited by A. V. Narlikar. Oxford University Press, 2017. http://dx.doi.org/10.1093/oxfordhb/9780198738169.013.6.

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This article discusses recent developments relating to the so-called topological superconductors (TSCs), which have a full pairing gap in the bulk and gapless surface states consisting of Majorana fermions (MFs). It first provides a background on topological superconductivity as a novel quantum state of matter before turning to topological insulators (TIs) and superconducting heterostructures, with particular emphasis on the vortices of such materials and the Majorana mode within a vortex. It also considers proposals for realizing TSCs by proximity effects through TI/SC heterostructures as well as experimental efforts to fabricate artificial TSCs using nanowires, superconducting junctions, and ferromagnetic atomic chains on superconductors.

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Book chapters on the topic "InP nanowire"

Zhang, Guoqiang, Kouta Tateno, Takehiko Tawara, and Hideki Gotoh. "InP/InAs Quantum Heterostructure Nanowires Toward Telecom-Band Nanowire Lasers." In Fundamental Properties of Semiconductor Nanowires, 433–54. Singapore: Springer Singapore, 2020. http://dx.doi.org/10.1007/978-981-15-9050-4_10.

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Godfrey, James R., Golnaz Azodi, James A. H. Stotz, and James M. Fraser. "InAsP Quantum Dots in InP Nanowire Waveguides as Sources of Quantum Light." In NATO Science for Peace and Security Series B: Physics and Biophysics, 369–70. Dordrecht: Springer Netherlands, 2018. http://dx.doi.org/10.1007/978-94-024-1544-5_21.

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Sikdar, Subhrajit, Basudev Nag Chowdhury, and Sanatan Chattopadhyay. "Designing InP-Nanowire Based Vertical Metal-Oxide-Semiconductor Capacitors for Wavelength Selective Visible Light Sensing." In Springer Proceedings in Physics, 957–62. Cham: Springer International Publishing, 2019. http://dx.doi.org/10.1007/978-3-319-97604-4_145.

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Colakerol Arslan, L., and K. E. Smith. "Electron Accumulation in InN Thin Films and Nanowires." In Low-Dimensional and Nanostructured Materials and Devices, 309–26. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-25340-4_13.

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Stoica, Toma, Eli Sutter, and Raffaella Calarco. "GaN and InN Nanowires: Growth and Optoelectronic Properties." In Engineering Materials, 73–96. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-12070-1_4.

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Li, Guijun, and Hoi-Sing Kwok. "Silicon Nanowire Solar Cells." In Advances in Silicon Solar Cells, 269–98. Cham: Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-69703-1_10.

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Ben Jamaa, M. Haykel. "Fabrication of Nanowire Crossbars." In Lecture Notes in Electrical Engineering, 33–73. Dordrecht: Springer Netherlands, 2011. http://dx.doi.org/10.1007/978-94-007-0650-7_2.

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Moşoarcă, Cristina, Radu Bănică, and Petrica Linul. "Nanospheres–Nanocubes–Nanowires." In New Frontiers in Nanochemistry, 327–37. Includes bibliographical references and indexes. | Contents: Volume 1. Structural nanochemistry – Volume 2. Topological nanochemistry – Volume 3. Sustainable nanochemistry.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429022944-29.

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Negri, Marco, Giovanni Attolini, Paola Lagonegro, and Matteo Bosi. "Silicon Carbide Nanowires." In New Frontiers in Nanochemistry, 385–98. Includes bibliographical references and indexes. | Contents: Volume 1. Structural nanochemistry – Volume 2. Topological nanochemistry – Volume 3. Sustainable nanochemistry.: Apple Academic Press, 2020. http://dx.doi.org/10.1201/9780429022944-34.

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Sun, Xuhui, and Tsun-Kong Sham. "Group IV Nanowires." In Springer Series in Optical Sciences, 223–46. Berlin, Heidelberg: Springer Berlin Heidelberg, 2014. http://dx.doi.org/10.1007/978-3-662-44362-0_11.

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Conference papers on the topic "InP nanowire"

Zhong, Z. Q., Z. Y. Li, L. Fu, Q. Gao, Z. Li, K. Peng, L. Li, et al. "InP single nanowire solar cells." In Optical Nanostructures and Advanced Materials for Photovoltaics. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/pv.2015.ptu3b.3.

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Mathai, Sagi, Nobuhiko P. Kobayashi, Xuema Li, Joseph Straznicky, Shih-Yuan Wang, Michael R. T. Tan, Denny Houng, and R. Stanley Williams. "InP Nanowire Diodes on Quartz Substrates." In 2008 8th IEEE Conference on Nanotechnology (NANO). IEEE, 2008. http://dx.doi.org/10.1109/nano.2008.160.

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Storm, Kristian, Gustav Nylund, Magnus Borgström, Jesper Wallentin, Carina Fasth, Claes Thelander, Lars Samuelson, Jisoon Ihm, and Hyeonsik Cheong. "Dual-gate induced InP nanowire diode." In PHYSICS OF SEMICONDUCTORS: 30th International Conference on the Physics of Semiconductors. AIP, 2011. http://dx.doi.org/10.1063/1.3666362.

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Yan, Xin, Junshuai Li, Fukuan Sun, Yao Wu, Bang Li, Xia Zhang, and Xiaomin Ren. "A Single InP Nanowire Room-Temperature Photodetector." In Asia Communications and Photonics Conference. Washington, D.C.: OSA, 2015. http://dx.doi.org/10.1364/acpc.2015.am2a.4.

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Ramesh, V., Q. Gao, H. H. Tan, S. Paiman, Y. N. Guo, J. Zou, and C. Jagadish. "InP/InGaAs coreshell nanowire heterostructures: Growth and characterisation." In Devices (COMMAD). IEEE, 2010. http://dx.doi.org/10.1109/commad.2010.5699792.

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Cui, Y., S. Plissard, J. Wang, T. T. T. Vu, E. Smalbrugge, E. J. Geluk, T. de Vries, et al. "InP nanowire array solar cell with cleaned sidewalls." In 2013 IEEE 39th Photovoltaic Specialists Conference (PVSC). IEEE, 2013. http://dx.doi.org/10.1109/pvsc.2013.6745176.

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Sarkar, Ataur, Anurag Chaudhry, V. J. Logeeswaran, Sungsoo Yi, and M. Saif Islam. "InP nanowire photodetectors heteroepitaxially grown between silicon electrodes." In Optics East 2007, edited by Nibir K. Dhar, Achyut Kumar Dutta, and M. Saif Islam. SPIE, 2007. http://dx.doi.org/10.1117/12.752513.

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Jackson, H. E., S. Perera, M. A. Fickenscher, L. M. Smith, J. M. Yarrison-Rice, H. J. Joyce, Q. Gao, et al. "Optical properties of single InP and GaAs nanowire heterostructures." In LEOS 2008 - 21st Annual Meeting of the IEEE Lasers and Electro-Optics Society (LEOS 2008). IEEE, 2008. http://dx.doi.org/10.1109/leos.2008.4688673.

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Zeng, Xulu, Gaute Otnes, Magnus Heurlin, and Magnus T. Borgstrom. "Growth and optimization of GaInP/InP nanowire tunnel diode." In 2017 IEEE 44th Photovoltaic Specialists Conference (PVSC). IEEE, 2017. http://dx.doi.org/10.1109/pvsc.2017.8366460.

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Maeda, S., K. Tomioka, S. Hara, and J. Motohisa. "Fabrication and Characterization of InP Nanowire Light Emitting Diodes." In 2011 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2011. http://dx.doi.org/10.7567/ssdm.2011.p-13-1.

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Reports on the topic "InP nanowire"

Brueck, Steven R. Radiation Effects in III-V Nanowire Devices. Fort Belvoir, VA: Defense Technical Information Center, September 2016. http://dx.doi.org/10.21236/ad1018179.

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Goldman, Allen M. Tunneling and Transport in Nanowires. Office of Scientific and Technical Information (OSTI), August 2016. http://dx.doi.org/10.2172/1295659.

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Ghita, Marius. Frequency Multiplication in Silicon Nanowires. Portland State University Library, January 2000. http://dx.doi.org/10.15760/etd.3077.

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Potma, Eric O. Ultrafast electron transport across nano gaps in nanowire circuits. Office of Scientific and Technical Information (OSTI), July 2015. http://dx.doi.org/10.2172/1206544.

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Lai, Ying-Cheng. STIR: Multistability and Chaos in a Driven Nanowire System. Fort Belvoir, VA: Defense Technical Information Center, January 2013. http://dx.doi.org/10.21236/ada586665.

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Mi, Zetian. 1.55 micro m In(Ga)N Nanowire Lasers on Silicon. Fort Belvoir, VA: Defense Technical Information Center, August 2012. http://dx.doi.org/10.21236/ada587147.

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LeBlanc, Saniya A., and Kenneth E. Goodson. Electrothermal phenomena in zinc oxide nanowires and contacts. Office of Scientific and Technical Information (OSTI), September 2012. http://dx.doi.org/10.2172/1051735.

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Wang, Zhong. Fundamental Piezotronic and Piezo-phototronic Effects in Nanowires. Office of Scientific and Technical Information (OSTI), October 2019. http://dx.doi.org/10.2172/1572284.

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Nosho, B. Z., B. R. Bennett, L. J. Whitman, and M. Goldenberg. Spontaneous Growth of an InAs Nanowire Lattice in an InAs/GaSb Superlattice. Fort Belvoir, VA: Defense Technical Information Center, August 2002. http://dx.doi.org/10.21236/ada447719.

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Barnes, Michael D. Directional Charge Separation in Isolated Organic Semiconductor Crystalline Nanowires. Office of Scientific and Technical Information (OSTI), March 2017. http://dx.doi.org/10.2172/1429404.

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