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Journal articles on the topic 'InP nanowire'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

SALIMATH, AKSHAYKUMAR, and BAHNIMAN GHOSH. "SPIN RELAXATION IN InP AND STRAINED InP NANOWIRES." SPIN 04, no. 03 (September 2014): 1450003. http://dx.doi.org/10.1142/s2010324714500039.

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In this paper, we employ semiclassical Monte Carlo approach to study spin polarized transport in InP and strained InP nanowires on GaAs substrate. Due to higher spin relaxation lengths, InP is being researched as suitable III–V material for spintronics related applications. Spin relaxation in InP channel is as a result of D'yakonov–Perel (DP) relaxation and Elliott–Yafet (EY) relaxation. We have considered injection polarization along z-direction and the magnitude of ensemble averaged spin variation is studied along the x-direction i.e., along transport direction. The effect of strain on various scattering rates and spin relaxation length is studied. We then present the effect of variation of nanowire width on spin relaxation length for the case of both strained and unstrained InP nanowire. The wire cross-section is varied between 4 × 4 nm2 and 10 × 10 nm2.

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2

Zhang, Guoqiang, Masato Takiguchi, Kouta Tateno, Takehiko Tawara, Masaya Notomi, and Hideki Gotoh. "Telecom-band lasing in single InP/InAs heterostructure nanowires at room temperature." Science Advances 5, no. 2 (February 2019): eaat8896. http://dx.doi.org/10.1126/sciadv.aat8896.

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Telecom-band single nanowire lasers made by the bottom-up vapor-liquid-solid approach, which is technologically important in optical fiber communication systems, still remain challenging. Here, we report telecom-band single nanowire lasers operating at room temperature based on multi-quantum-disk InP/InAs heterostructure nanowires. Transmission electron microscopy studies show that highly uniform multi-quantum-disk InP/InAs structure is grown in InP nanowires by self-catalyzed vapor-liquid-solid mode using indium particle catalysts. Optical excitation of individual nanowires yielded lasing in telecom band operating at room temperature. We show the tunability of laser wavelength range in telecom band by modulating the thickness of single InAs quantum disks through quantum confinement along the axial direction. The demonstration of telecom-band single nanowire lasers operating at room temperature is a major step forward in providing practical integrable coherent light sources for optoelectronics and data communication.

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3

Miao, Guo Qing, and Zhi Wei Zhang. "Effect of Substrate Orientation and PH₃ Thermal Annealing Treatment on Catalyst-Free InP Nanowires." Advanced Materials Research 716 (July 2013): 84–88. http://dx.doi.org/10.4028/www.scientific.net/amr.716.84.

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Catalyst-free InP nanowires were grown on Si (100) and Si (111) substrates by metal organic chemical vapor deposition and the morphology, crystal structure, and optical properties of the nanowires are investigated. X-ray diffraction results show two peaks of InP (111) and InP (220) in the spectra. Two more peaks of InP (200) and InP (311) are observed if PH3thermal annealing is performed on the sample for 15 minutes after nanowire growth is completed. The InP (220), InP (311), and InP (200) peaks originate from InP crystal formation on top of the nanowires; only the InP (111) peak originates from the InP nanowires. Finally, the temperature dependence of the PL peak positions of InP nanowires grown on Si (100) and InP substrate are measured.

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4

Rigutti, Lorenzo, Andres De Luna Bugallo, Maria Tchernycheva, Gwenole Jacopin, François H. Julien, George Cirlin, Gilles Patriarche, Damien Lucot, Laurent Travers, and Jean-Christophe Harmand. "Si Incorporation in InP Nanowires Grown by Au-Assisted Molecular Beam Epitaxy." Journal of Nanomaterials 2009 (2009): 1–7. http://dx.doi.org/10.1155/2009/435451.

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We report on the growth, structural characterization, and conductivity studies of Si-doped InP nanowires grown by Au-assisted molecular beam epitaxy. It is shown that Si doping reduces the mean diffusion length of adatoms on the lateral nanowire surface and consequently reduces the nanowire growth rate and promotes lateral growth. A resistivity as low as5.1±0.3×10−5 Ω⋅cm is measured for highly doped nanowires. Two dopant incorporation mechanisms are discussed: incorporation via catalyst particle and direct incorporation on the nanowire sidewalls. The first mechanism is shown to be less efficient than the second one, resulting in inhomogeneous radial dopant distribution.

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5

Greenberg, Ya’akov, Alexander Kelrich, Shimon Cohen, Sohini Kar-Narayan, Dan Ritter, and Yonatan Calahorra. "Strain-Mediated Bending of InP Nanowires through the Growth of an Asymmetric InAs Shell." Nanomaterials 9, no. 9 (September 16, 2019): 1327. http://dx.doi.org/10.3390/nano9091327.

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Controlling nanomaterial shape beyond its basic dimensionality is a concurrent challenge tackled by several growth and processing avenues. One of these is strain engineering of nanowires, implemented through the growth of asymmetrical heterostructures. Here, we report metal–organic molecular beam epitaxy of bent InP/InAs core/shell nanowires brought by precursor flow directionality in the growth chamber. We observe the increase of bending with decreased core diameter. We further analyze the composition of a single nanowire and show through supporting finite element simulations that strain accommodation following the lattice mismatch between InP and InAs dominates nanowire bending. The simulations show the interplay between material composition, shell thickness, and tapering in determining the bending. The simulation results are in good agreement with the experimental bending curvature, reproducing the radius of 4.3 µm (±10%), for the 2.3 µm long nanowire. The InP core of the bent heterostructure was found to be compressed at about 2%. This report provides evidence of shape control and strain engineering in nanostructures, specifically through the exchange of group-V materials in III–V nanowire growth.

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6

Резник, Р. Р., Г. Э. Цырлин, И. В. Штром, А. И. Хребтов, И. П. Сошников, Н. В. Крыжановская, Э. И. Моисеев, and А. Е. Жуков. "Когерентный рост нитевидных нанокристаллов InP/InAsP/InP на поверхности Si(111) при молекулярно-пучковой эпитаксии." Письма в журнал технической физики 44, no. 3 (2018): 55. http://dx.doi.org/10.21883/pjtf.2018.03.45579.16991.

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AbstractResults obtained in a study of the growth of InP/InAsP/InP nanowires on the Si (111) surface are presented. Using a special procedure of substrate preparation immediately before the growth made it possible to obtain a nanowire coherency with the substrate of nearly 100%. A high-intensity emission from nanostructures of this kind was observed at a wavelength of ~1.3 μm at room temperature.

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7

Jafari Jam, Reza, Axel R. Persson, Enrique Barrigón, Magnus Heurlin, Irene Geijselaers, Víctor J. Gómez, Olof Hultin, Lars Samuelson, Magnus T. Borgström, and Håkan Pettersson. "Template-assisted vapour–liquid–solid growth of InP nanowires on (001) InP and Si substrates." Nanoscale 12, no. 2 (2020): 888–94. http://dx.doi.org/10.1039/c9nr08025b.

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We report on the synthesis of InP nanowire arrays on (001) InP and Si substrates using template-assisted vapour–liquid–solid growth. We also demonstrate growth of InP nanowire p–n junctions and InP/InAs/InP nanowire heterostructures on (001) InP substrates.

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8

Molina, Sergio I., María Varela, Teresa Ben, David L. Sales, Joaquín Pizarro, Pedro L. Galindo, David Fuster, Yolanda González, Luisa González, and Stephen J. Pennycook. "A Method to Determine the Strain and Nucleation Sites of Stacked Nano-Objects." Journal of Nanoscience and Nanotechnology 8, no. 7 (July 1, 2008): 3422–26. http://dx.doi.org/10.1166/jnn.2008.123.

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We determine the compositional distribution with atomic column resolution in a horizontal nanowire from the analysis of aberration-corrected high resolution Z-contrast images. The strain field in a layer capping the analysed nanowire is determined by anisotropic elastic theory from the resulting compositional map. The reported method allows preferential nucleation sites for epitaxial nanowires to be predicted with high spatial resolution, as required for accurate tuning of desired optical properties. The application of this method has been exemplified in this work for stacked InAs(P) horizontal nanowires grown on InP separated by 3 nm thick InP layers, but we propose it as a general method to be applied to other stacked nano-objects.

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9

Hiruma, K., K. Tomioka, P. Mohan, L. Yang, J. Noborisaka, B. Hua, A. Hayashida, et al. "Fabrication of Axial and Radial Heterostructures for Semiconductor Nanowires by Using Selective-Area Metal-Organic Vapor-Phase Epitaxy." Journal of Nanotechnology 2012 (2012): 1–29. http://dx.doi.org/10.1155/2012/169284.

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The fabrication of GaAs- and InP-based III-V semiconductor nanowires with axial/radial heterostructures by using selective-area metal-organic vapor-phase epitaxy is reviewed. Nanowires, with a diameter of 50–300 nm and with a length of up to 10 μm, have been grown along the〈111〉B or〈111〉A crystallographic orientation from lithography-defined SiO2mask openings on a group III-V semiconductor substrate surface. An InGaAs quantum well (QW) in GaAs/InGaAs nanowires and a GaAs QW in GaAs/AlGaAs or GaAs/GaAsP nanowires have been fabricated for the axial heterostructures to investigate photoluminescence spectra from QWs with various thicknesses. Transmission electron microscopy combined with energy dispersive X-ray spectroscopy measurements have been used to analyze the crystal structure and the atomic composition profile for the nanowires. GaAs/AlGaAs, InP/InAs/InP, and GaAs/GaAsP core-shell structures have been found to be effective for the radial heterostructures to increase photoluminescence intensity and have enabled laser emissions from a single GaAs/GaAsP nanowire waveguide. The results have indicated that the core-shell structure is indispensable for surface passivation and practical use of nanowire optoelectronics devices.

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10

GAO, Q., H. J. JOYCE, S. PAIMAN, J. H. KANG, H. H. TAN, Y. KIM, L. M. SMITH, et al. "III-V COMPOUND SEMICONDUCTOR NANOWIRES FOR OPTOELECTRONIC DEVICE APPLICATIONS." International Journal of High Speed Electronics and Systems 20, no. 01 (March 2011): 131–41. http://dx.doi.org/10.1142/s0129156411006465.

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GaAs and InP based III-V compound semiconductor nanowires were grown epitaxially on GaAs (or Si ) (111)B and InP (111)B substrates, respectively, by metalorganic chemical vapor deposition using Au nanoparticles as catalyst. In this paper, we will give an overview of nanowire research activities in our group. In particular, the effects of growth parameters on the crystal structure and optical properties of various nanowires were studied in detail. We have successfully obtained defect-free GaAs nanowires with nearly intrinsic exciton lifetime and vertical straight nanowires on Si (111)B substrates. The crystal structure of InP nanowires, i.e., WZ or ZB , can also be engineered by carefully controlling the V/III ratio and catalyst size.

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11

Novotny, Clint J., Edward T. Yu, and Paul K. L. Yu. "InP Nanowire/Polymer Hybrid Photodiode." Nano Letters 8, no. 3 (March 2008): 775–79. http://dx.doi.org/10.1021/nl072372c.

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12

Zeng, Xulu, Gaute Otnes, Magnus Heurlin, Renato T. Mourão, and Magnus T. Borgström. "InP/GaInP nanowire tunnel diodes." Nano Research 11, no. 5 (May 2018): 2523–31. http://dx.doi.org/10.1007/s12274-017-1877-8.

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13

Tateno, K., D. Takagi, G. Zhang, H. Gotoh, H. Hibino, and T. Sogawa. "VLS Growth of III-V Semiconductor Nanowires on Graphene Layers." MRS Proceedings 1439 (2012): 45–50. http://dx.doi.org/10.1557/opl.2012.892.

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ABSTRACTGaP, GaAs, and InP nanowires were grown on graphitic layers by the vapor-liquid-solid method in a metalorganic vapor phase epitaxy chamber. On graphene/SiC(0001), Au particles as catalyst were formed at the steps by controlling the Au deposition rate and the annealing temperature in a low-energy electron microscopy system. GaP nanowires were grown on this substrate, and it was found that vertical nanowires were formed at the steps of the surface. We also performed GaP, GaAs, and InP nanowire growth on graphite substrates. Free-standing nanowires were obtained for all three materials, although they were vertically, diagonally, and laterally-oriented at the same time. The results suggested that the growth at the steps is the key to growing nanowires vertically on graphene surface.

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14

Parry, H. J., M. J. Ashwin, and T. S. Jones. "InAs nanowire formation on InP(001)." Journal of Applied Physics 100, no. 11 (2006): 114305. http://dx.doi.org/10.1063/1.2399326.

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15

Yan, Xin, Bang Li, Yao Wu, Xia Zhang, and Xiaomin Ren. "A single crystalline InP nanowire photodetector." Applied Physics Letters 109, no. 5 (August 2016): 053109. http://dx.doi.org/10.1063/1.4960713.

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16

Wang, Jia, Sébastien Plissard, Moïra Hocevar, Thuy T. T. Vu, Tilman Zehender, George G. W. Immink, Marcel A. Verheijen, Jos Haverkort, and Erik P. A. M. Bakkers. "Position-controlled [100] InP nanowire arrays." Applied Physics Letters 100, no. 5 (January 30, 2012): 053107. http://dx.doi.org/10.1063/1.3679136.

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17

Cavalli, A., J. E. M. Haverkort, and E. P. A. M. Bakkers. "Exploring the Internal Radiative Efficiency of Selective Area Nanowires." Journal of Nanomaterials 2019 (June 2, 2019): 1–13. http://dx.doi.org/10.1155/2019/6924163.

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Nanowires are ideal building blocks for next-generation solar cell applications. Nanowires grown with the selective area (SA) approach, in particular, have demonstrated very high material quality, thanks to high growth temperature, defect-free crystalline structure, and absence of external catalysts, especially in the InP material system. A comprehensive study on the influence of growth conditions and device processing on optical emission is still necessary though. This article presents an investigation of the nanowire optical properties, performed in order to optimize the internal radiative efficiency. In an initial preamble, the motivation for this study is discussed, as well as the morphology and crystallinity of the nanowires. The effect on the nanowire photoluminescence of several intrinsic and extrinsic parameters and factors are then presented in three sections: first, the influence of basic growth conditions such as the temperature and the precursor ratio is studied. Subsequently, the effects of varying dopant molar flows are explored, keeping in mind the intended solar cell application. Third, the manner in which the processing and the passivation affect the nanowire optical emission is discussed. Precise control of the growth conditions allows maximizing the nanowire internal radiative efficiency and thus their performance in solar cells and other optoelectronic devices.

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18

Akamatsu, Tomoya, Katsuhiro Tomioka, and Junichi Motohisa. "Demonstration of InP/InAsP/InP axial heterostructure nanowire array vertical LEDs." Nanotechnology 31, no. 39 (July 13, 2020): 394003. http://dx.doi.org/10.1088/1361-6528/ab9bd2.

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19

Schmidt, T. M. "Hydrogen and oxygen on InP nanowire surfaces." Applied Physics Letters 89, no. 12 (September 18, 2006): 123117. http://dx.doi.org/10.1063/1.2345599.

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20

Anttu, Nicklas, Alireza Abrand, Damir Asoli, Magnus Heurlin, Ingvar Åberg, Lars Samuelson, and Magnus Borgström. "Absorption of light in InP nanowire arrays." Nano Research 7, no. 6 (May 27, 2014): 816–23. http://dx.doi.org/10.1007/s12274-014-0442-y.

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21

Tripathi, Sudhanshu, Rekha Agarwal, and Devraj Singh. "Size-Dependent Ultrasonic and Thermophysical Properties of Indium Phosphide Nanowires." Zeitschrift für Naturforschung A 75, no. 4 (April 28, 2020): 373–80. http://dx.doi.org/10.1515/zna-2019-0351.

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AbstractThe present work explores the diameter- and temperature-dependent ultrasonic characterization of wurtzite indium phosphide nanowires (WZ-InP-NWs) using a theoretical model based on the ultrasonic non-destructive evaluation (NDE) technique. Initially, the second- and third-order elastic constants (SOECs and TOECs) were computed using the Lennard-Jones potential model, considering the interactions up to the second nearest neighbours. Simultaneously, the mechanical parameters (Young’s modulus, shear modulus, elastic anisotropy factor, bulk modulus, Pugh’s ratio and Poisson’s ratio) were also estimated. Finally, the thermophysical properties and ultrasonic parameters (velocity and attenuation) of the InP-NWs were determined using the computed quantities. The obtained elastic/mechnical properties of the InP-NWs were also analyzed to explore the mechanical behaviors. The correlations between temperature-/size-dependent ultrasonic attenuation and the thermophysical properties were established. The ultrasonic attenuation was observed to be the third-order polynomial function of the diameter/temperature for the InP nanowire.

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22

Hu, Lucy Yue. "Vertical InP Nanowire Arrays Fabricated by Nanoimprint Lithography." MRS Bulletin 29, no. 6 (June 2004): 367–68. http://dx.doi.org/10.1557/mrs2004.114.

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23

Bao, Jiming, David C. Bell, Federico Capasso, Jakob B. Wagner, Thomas Mårtensson, Johanna Trägårdh, and Lars Samuelson. "Optical Properties of Rotationally Twinned InP Nanowire Heterostructures." Nano Letters 8, no. 3 (March 2008): 836–41. http://dx.doi.org/10.1021/nl072921e.

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24

Hillerich, Karla, Dario S. Ghidini, Kimberly A. Dick, Knut Deppert, and Jonas Johansson. "Cu particle seeded InP-InAs axial nanowire heterostructures." physica status solidi (RRL) - Rapid Research Letters 7, no. 10 (July 23, 2013): 850–54. http://dx.doi.org/10.1002/pssr.201307241.

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25

De Luca, Marta, Attilio Zilli, H. Aruni Fonseka, Sudha Mokkapati, Antonio Miriametro, Hark Hoe Tan, Leigh Morris Smith, Chennupati Jagadish, Mario Capizzi, and Antonio Polimeni. "Polarized Light Absorption in Wurtzite InP Nanowire Ensembles." Nano Letters 15, no. 2 (January 16, 2015): 998–1005. http://dx.doi.org/10.1021/nl5038374.

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26

Haggren, Tuomas, Gaute Otnes, Renato Mourão, Vilgaile Dagyte, Olof Hultin, Fredrik Lindelöw, Magnus Borgström, and Lars Samuelson. "InP nanowire p-type doping via Zinc indiffusion." Journal of Crystal Growth 451 (October 2016): 18–26. http://dx.doi.org/10.1016/j.jcrysgro.2016.06.020.

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27

Hillerich, Karla, Maria E. Messing, L. Reine Wallenberg, Knut Deppert, and Kimberly A. Dick. "Epitaxial InP nanowire growth from Cu seed particles." Journal of Crystal Growth 315, no. 1 (January 2011): 134–37. http://dx.doi.org/10.1016/j.jcrysgro.2010.08.016.

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28

Otnes, Gaute, Enrique Barrigón, Christian Sundvall, K. Erik Svensson, Magnus Heurlin, Gerald Siefer, Lars Samuelson, Ingvar Åberg, and Magnus T. Borgström. "Understanding InP Nanowire Array Solar Cell Performance by Nanoprobe-Enabled Single Nanowire Measurements." Nano Letters 18, no. 5 (April 27, 2018): 3038–46. http://dx.doi.org/10.1021/acs.nanolett.8b00494.

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29

Wallentin, Jesper, Robin N. Wilke, Markus Osterhoff, and Tim Salditt. "Simultaneous high-resolution scanning Bragg contrast and ptychographic imaging of a single solar cell nanowire." Journal of Applied Crystallography 48, no. 6 (November 10, 2015): 1818–26. http://dx.doi.org/10.1107/s1600576715017975.

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Simultaneous scanning Bragg contrast and small-angle ptychographic imaging of a single solar cell nanowire are demonstrated, using a nanofocused hard X-ray beam and two detectors. The 2.5 µm-long nanowire consists of a single-crystal InP core of 190 nm diameter, coated with amorphous SiO2and polycrystalline indium tin oxide. The nanowire was selected and aligned in real space using the small-angle scattering of the 140 × 210 nm X-ray beam. The orientation of the nanowire, as observed in small-angle scattering, was used to find the correct rotation for the Bragg condition. After alignment in real space and rotation, high-resolution (50 nm step) raster scans were performed to simultaneously measure the distribution of small-angle scattering and Bragg diffraction in the nanowire. Ptychographic reconstruction of the coherent small-angle scattering was used to achieve sub-beam spatial resolution. The small-angle scattering images, which are sensitive to the shape and the electron density of all parts of the nanowire, showed a homogeneous profile along the nanowire axis except at the thicker head region. In contrast, the scanning Bragg diffraction microscopy, which probes only the single-crystal InP core, revealed bending and crystalline inhomogeneity. Both systematic and non-systematic real-space movement of the nanowire were observed as it was rotated, which would have been difficult to reveal only from the Bragg scattering. These results demonstrate the advantages of simultaneously collecting and analyzing the small-angle scattering in Bragg diffraction experiments.

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30

Fountaine, Katherine T., Wen-Hui Cheng, Colton R. Bukowsky, and Harry A. Atwater. "Near-Unity Unselective Absorption in Sparse InP Nanowire Arrays." ACS Photonics 3, no. 10 (September 30, 2016): 1826–32. http://dx.doi.org/10.1021/acsphotonics.6b00341.

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31

McKibbin, Sarah R., Jovana Colvin, Andrea Troian, Johan V. Knutsson, James L. Webb, Gaute Otnes, Kai Dirscherl, et al. "Operando Surface Characterization of InP Nanowire p–n Junctions." Nano Letters 20, no. 2 (December 31, 2019): 887–95. http://dx.doi.org/10.1021/acs.nanolett.9b03529.

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32

Peng, Kun, Patrick Parkinson, Jessica L. Boland, Qian Gao, Yesaya C. Wenas, Christopher L. Davies, Ziyuan Li, et al. "Broadband Phase-Sensitive Single InP Nanowire Photoconductive Terahertz Detectors." Nano Letters 16, no. 8 (July 18, 2016): 4925–31. http://dx.doi.org/10.1021/acs.nanolett.6b01528.

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33

Fu, Lan. "(Invited) InGaAs/InP Quantum Well Nanowire Surface Emitting LEDs." ECS Meeting Abstracts MA2020-01, no. 16 (May 1, 2020): 1077. http://dx.doi.org/10.1149/ma2020-01161077mtgabs.

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34

Maeda, Satoshi, Katsuhiro Tomioka, Shinjiroh Hara, and Junichi Motohisa. "Fabrication and Characterization of InP Nanowire Light-Emitting Diodes." Japanese Journal of Applied Physics 51, no. 2 (February 20, 2012): 02BN03. http://dx.doi.org/10.1143/jjap.51.02bn03.

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35

Chu, Hyung-Joon, Ting-Wei Yeh, Lawrence Stewart, and P. Daniel Dapkus. "Wurtzite InP nanowire arrays grown by selective area MOCVD." physica status solidi (c) 7, no. 10 (June 22, 2010): 2494–97. http://dx.doi.org/10.1002/pssc.200983910.

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36

Jain, Vishal, Magnus Heurlin, Mohammad Karimi, Laiq Hussain, Mahtab Aghaeipour, Ali Nowzari, Alexander Berg, et al. "Bias-dependent spectral tuning in InP nanowire-based photodetectors." Nanotechnology 28, no. 11 (February 17, 2017): 114006. http://dx.doi.org/10.1088/1361-6528/aa5236.

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37

Dorn, August, Peter M. Allen, and Moungi G. Bawendi. "Electrically Controlling and Monitoring InP Nanowire Growth from Solution." ACS Nano 3, no. 10 (September 22, 2009): 3260–65. http://dx.doi.org/10.1021/nn900820h.

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38

Maeda, Satoshi, Katsuhiro Tomioka, Shinjiroh Hara, and Junichi Motohisa. "Fabrication and Characterization of InP Nanowire Light-Emitting Diodes." Japanese Journal of Applied Physics 51, no. 2S (February 1, 2012): 02BN03. http://dx.doi.org/10.7567/jjap.51.02bn03.

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39

Wallentin, Jesper, Martin Ek, L. Reine Wallenberg, Lars Samuelson, and Magnus T. Borgström. "Electron Trapping in InP Nanowire FETs with Stacking Faults." Nano Letters 12, no. 1 (December 7, 2011): 151–55. http://dx.doi.org/10.1021/nl203213d.

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40

Romeo, Lorenzo, Stefano Roddaro, Alessandro Pitanti, Daniele Ercolani, Lucia Sorba, and Fabio Beltram. "Electrostatic Spin Control in InAs/InP Nanowire Quantum Dots." Nano Letters 12, no. 9 (August 6, 2012): 4490–94. http://dx.doi.org/10.1021/nl301497j.

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41

Yee, R. J., S. J. Gibson, V. G. Dubrovskii, and R. R. LaPierre. "Effects of Be doping on InP nanowire growth mechanisms." Applied Physics Letters 101, no. 26 (December 24, 2012): 263106. http://dx.doi.org/10.1063/1.4773206.

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42

Pozuelo, Marta, Hailong Zhou, Stanley Lin, Scott A. Lipman, Mark S. Goorsky, Robert F. Hicks, and Suneel Kodambaka. "Self-catalyzed growth of InP/InSb axial nanowire heterostructures." Journal of Crystal Growth 329, no. 1 (August 2011): 6–11. http://dx.doi.org/10.1016/j.jcrysgro.2011.06.034.

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43

Sharma, Sanjeev Kumar, Jeetendra Singh, Balwinder Raj, and Mamta Khosla. "Analysis of Barrier Layer Thickness on Performance of In1–xGaxAs Based Gate Stack Cylindrical Gate Nanowire MOSFET." Journal of Nanoelectronics and Optoelectronics 13, no. 10 (October 1, 2018): 1473–77. http://dx.doi.org/10.1166/jno.2018.2374.

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In this paper, InGaAs/InP heterostructure based Cylindrical Gate Nanowire MOSFETs (CGNWMOSFET) is designed and its performance has been analyzed using silvaco ATLAS TCAD tool. The influence of the barrier thickness is investigated for perusal performance of an InGaAs/InP heterostructure CGNWMOSFET. The performance compared for various parameters on current, off current, Cut off Frequency (fT), Transconductance (gm), Gate to Source capacitance (Cgs), and Gate to Drain capacitance (Cgd). Results show significant variation in the performance of InGaAs/InP heterostructure CGNWMOSFET by varying the barrier thickness.

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Adibzadeh, Farzaneh, and Saeed Olyaee. "Performance improvement of InP nanowire array solar cells by decorated nanowires and using back reflector." Optical Materials 109 (November 2020): 110397. http://dx.doi.org/10.1016/j.optmat.2020.110397.

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Jeddi, Hossein, Mohammad Karimi, Bernd Witzigmann, Xulu Zeng, Lukas Hrachowina, Magnus T. Borgström, and Håkan Pettersson. "Gain and bandwidth of InP nanowire array photodetectors with embedded photogated InAsP quantum discs." Nanoscale 13, no. 12 (2021): 6227–33. http://dx.doi.org/10.1039/d1nr00846c.

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Abstract:

We report on experimental results and advanced self-consistent simulations revealing a non-linear optical response, resulting from a trap-induced photogating mechanism, observed in InP nanowire array photoconductors with embedded InAsP quantum discs.

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Fonseka, H. A., A. S. Ameruddin, P. Caroff, D. Tedeschi, M. De Luca, F. Mura, Y. Guo, et al. "InP–InxGa1−xAs core-multi-shell nanowire quantum wells with tunable emission in the 1.3–1.55 μm wavelength range." Nanoscale 9, no. 36 (2017): 13554–62. http://dx.doi.org/10.1039/c7nr04598k.

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Ishizaka, Fumiya, Yoshihiro Hiraya, Katsuhiro Tomioka, Junichi Motohisa, and Takashi Fukui. "Growth of All-Wurtzite InP/AlInP Core–Multishell Nanowire Array." Nano Letters 17, no. 3 (February 13, 2017): 1350–55. http://dx.doi.org/10.1021/acs.nanolett.6b03727.

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Karimi, Mohammad, Vishal Jain, Magnus Heurlin, Ali Nowzari, Laiq Hussain, David Lindgren, Jan Eric Stehr, et al. "Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors." Nano Letters 17, no. 6 (May 31, 2017): 3356–62. http://dx.doi.org/10.1021/acs.nanolett.6b05114.

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He Bing-Xiang and He Ji-Zhou. "Thermoelectric refrigerator of a double-barrier InAs/InP nanowire heterostructure." Acta Physica Sinica 59, no. 6 (2010): 3846. http://dx.doi.org/10.7498/aps.59.3846.

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Yang, Inseok, Ziyuan Li, Jennifer Wong-Leung, Yi Zhu, Zhe Li, Nikita Gagrani, Li Li, et al. "Multiwavelength Single Nanowire InGaAs/InP Quantum Well Light-Emitting Diodes." Nano Letters 19, no. 6 (May 29, 2019): 3821–29. http://dx.doi.org/10.1021/acs.nanolett.9b00959.

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