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1
Rusch, Thomas, and Achim Zeileis. "Discussion on Fifty Years of Classification and Regression Trees." Wiley, 2014. http://dx.doi.org/10.1111/insr.12062.
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In this discussion paper, we argue that the literature on tree algorithms is very fragmented. We identify possible causes and discuss good and bad sides of this situation. Among the latter is the lack of free open-source
implementations for many algorithms. We argue that if the community adopts a standard of creating and sharing free open-source implementations for their developed algorithms and creates easy access to these programs the bad sides of the fragmentation will be actively combated and will benefit the whole scientific community. (authors' abstract)
2
Vicente, José. "Proprietes de transport quantique et classique du gaz d'electrons bidimensionnel dans l'heterostructure algaas/gaas, application a la croissance epitaxique et a la caracterisation du composant tegfet." Toulouse, INSA, 1991. http://eprint-insa-toulouse.fr.gorgone.univ-toulouse.fr/881/.
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Le sujet de ce travail concerne les proprietes de transport (mobilite, densite) des electrons du gaz bidimensionnel forme a l'heterojonction algaas/gaas et realise dans des composants tegfts (transistor a effet de champ a gaz d'electrons bidimensionnels). Des mesures d'effet hall quantique, de caracteristiques courant-tension et de magnetoresistance ont ete effectuees sur des echantillons d'effet hall et des transistors hyperfrequence afin de mieux comprendre le comportement en temperature et en champ magnetique. Les observations experimentales montrent bien le caractere bidimensionnel des electrons a l'interface, mais aussi plusieurs phenomenes comme le transfert de charges et l'effet des pieges profonds, responsables en partie de la degradation des performances avec le champ electrique. Le phenomene de fluctuations universelles de conductance, observable seulement a tres basse temperature sur des echantillons mesoscopiques (de taille submicronique), et du aux interferences quantiques des ondes electroniques, a ete aborde par des mesures du comportement de la variance de la conductance avec le champ magnetique. Les observations effectuees sont en accord avec une theorie recente et jusqu'alors non verifiee par l'experience
3
Сидор, О. М. "Гомоперехід n-InSe–p-InSe : Cd з ефективністю 2,8 %". Thesis, Сумський державний університет, 2015. http://essuir.sumdu.edu.ua/handle/123456789/40978.
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Шаруватий кристал InSe (група А3В6) є привабливим матеріалом для перетворювачів сонячної енергії внаслідок високої фоточутливості та оптимальної ширини забороненої зони (1,2 еВ). Додатковою перевагою є його висока радіаційна стійкість.
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RIVERA, MOY, and JORGE CARLOS. "EQUIPOS E INST. ESPECIALES." Universidad Peruana de Ciencias Aplicadas (UPC), 2019. http://hdl.handle.net/10757/626624.
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Descripción:
El curso procura proporcionar al alumno herramientas prácticas y conceptos para resolver adecuadamente mediante razonamiento cualitativo y cuantitativo los proyectos arquitectónicos tomando en cuenta las necesidades de asoleamiento, las características de la ventilación mecánica y el aire acondicionado y, el control de ruido en las edificaciones.
Propósito:
El conocimiento de estos temas y su uso correcto en los proyectos profesionales de los futuros arquitectos, garantizarán una obra proyectada con calidad y evitarán costosos cambios de diseño en obra, lo que ocasiona muchas veces pérdidas de tiempo y dinero. El curso busca contribuir al desarrollo de la competencia general Razonamiento Cuantitativo y a la Competencia específica Desarrollo de prácticas, habilidades técnicas y conocimiento (Building Practices, Technical Skills and Knowledge), ambas en el nivel 3.
Tiene como requisito el curso AR95 Acabados/Tecnología de la Madera.
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TORRES, FERRARI, and JOSE DOMINGO. "EQUIPOS E INST. ESPECIALES." Universidad Peruana de Ciencias Aplicadas (UPC), 2019. http://hdl.handle.net/10757/626631.
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Descripción:
El curso procura proporcionar al alumno herramientas prácticas y conceptos para resolver adecuadamente mediante razonamiento cualitativo y cuantitativo los proyectos arquitectónicos tomando en cuenta las necesidades de asoleamiento, las características de la ventilación mecánica y el aire acondicionado y, el control de ruido en las edificaciones.
Propósito:
El conocimiento de estos temas y su uso correcto en los proyectos profesionales de los futuros arquitectos, garantizarán una obra proyectada con calidad y evitarán costosos cambios de diseño en obra, lo que ocasiona muchas veces pérdidas de tiempo y dinero. El curso busca contribuir al desarrollo de la competencia general Razonamiento Cuantitativo y a la Competencia específica Desarrollo de prácticas, habilidades técnicas y conocimiento (Building Practices, Technical Skills and Knowledge), ambas en el nivel 3.
Tiene como requisito el curso AR95 Acabados/Tecnología de la Madera.
6
Simón, Colomar David, John-Olof Nilsson, and Peter Händel. "Smoothing for ZUPT-aided INSs." KTH, Signalbehandling, 2012. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-107414.
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Due to the recursive and integrative nature of zero-velocity-update-aided (ZUPT-aided) inertial navigation systems (INSs), the error covariance increases throughout each ZUPT-less period followed by a drastic decrease and large state estimate corrections as soon as ZUPTs are applied. For dead-reckoning with foot-mounted inertial sensors, this gives undesirable discontinuities in the estimated trajectory at the end of each step. However, for many applications, some degree of lag can be tolerated and the information provided by the ZUPTs at the end of a step can be made available throughout the step, eliminating the discontinuities. For this purpose, we propose a smoothing algorithm for ZUPT-aided INSs. For near real-time applications, smoothing is applied to the data in a step-wise manner requiring a suggested varying-lag segmentation rule. For complete off-line processing, full data set smoothing is examined. Finally, the consequences and impact of smoothing are analyzed and quantified based on real-data.<br><p>QC 20130114</p>
7
Theys, Bertrand. "Photoélectrochimie du séléniure d'indium, InSe." Grenoble 2 : ANRT, 1987. http://catalogue.bnf.fr/ark:/12148/cb37610177f.
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Bürger, Thomas. "Alles ins Internet?!" Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-81654.
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Mackert, Christoph. "Fragmente ins Netz." SLUB Dresden, 2016. https://slub.qucosa.de/id/qucosa%3A7619.
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Handschriften wurden schon seit dem Mittelalter häufig ausgemustert und recycelt. Daher existieren von vielen heute nur noch Bruchstücke. Das digitale Zeitalter, das die Handschrift in immer mehr Lebensbereichen zurückdrängt, hilft nun einem internationalen Netzwerk von Bibliotheken, diese alten Handschriftenreste wieder ans Licht zu bringen.
Seit Mai 2016 beteiligt sich die UB Leipzig mit großzügiger Unterstützung der Alfried Krupp von Bohlen und Halbach-Stiftung an einem internationalen Projekt zum Aufbau einer Datenbank und virtuellen Arbeitsplattform für Handschriftenfragmente.
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Wei, Ji. "Two-photon optical bistability in InSb." Thesis, Heriot-Watt University, 1986. http://hdl.handle.net/10399/1071.
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KOEBEL, ARNAUD. "Heterostructures gase et inse sur si." Paris 7, 1997. http://www.theses.fr/1997PA077123.
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L'observation d'epitaxie entre semiconducteurs lamellaires (2d), malgre les contraintes de desaccord parametrique, alors que les semiconducteurs tridimensionnels (3d) classiques ne le permettent pas a permis de penser que l'intercalation de composes lamellaires entre semiconducteurs classiques pourrait etre une solution pour realiser des epitaxies a fort desaccord entre semiconducteurs 3d. Pour que ce systeme soit possible, l'accrochage entre les materiaux 3d et 2d doit etre de type van der waals sans liaisons dirigees. L'objet de cette these est l'etude de la structure de l'interface entre gase et si(111), en utilisant deux techniques : microscopie electronique en transmission a haute resolution (hrtem) et ondes stationnaires de rayons x. Les observations hrtem ont mis en evidence la grande sensibilite des couches produites a la preparation initiale de la surface de silicium. Les surfaces h-si(111) ont permis la croissance de couches de gase de la meilleure qualite. Les observations en vue de plan ont montre une microstructure riche constituee de domaines de taille 1000a. Le mode de croissance observe est probablement de type croissance ilots bidimensionnels. Les experiences xsw ont demontre l'existence d'un demi-feuillet de gase a l'interface. L'epitaxie n'est donc pas de type van der waals mais pseudomorphique. La premiere couche complete est deja relaxee par rapport au substrat. La croissance se deroule donc en deux stades : une epitaxie pseudomorphique suivie par une homoepitaxie van der waals de gase. La position du selenium dans le demi-feuillet est principalement de symetrie silicium, mais une petite quantite est dans une position de symetrie gase. D'autres heterostructures 2d/3d ont ete etudiees : inse/si(111), multicouches gase/inse et reprise de croissance de znse sur une heterostructure 2d/3d. Le systeme inse/si est similaire au cas gase/si, mais avec une taille de domaines inferieure, a cause des parametres de croissance differents. Les multicouches gase/inse obtenues sont de qualite moyenne, a cause des temperatures de fusion trop differentes entre gase et inse. La reprise de croissance de znse a donne des couches de qualite diverses, mais le systeme znse/gase/si(111) presente des caracteristiques encouragentes.
12
Сидор, О. М., та О. А. Сидор. "Радіаційна стійкість плівок власного оксиду InSe". Thesis, Сумський державний університет, 2016. http://essuir.sumdu.edu.ua/handle/123456789/45773.
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Власні оксиди (ВО) напівпровідників дуже широко застосовують в електронних компонентах. Низька густина обірваних звязків на ван-дер-Ваальсовій поверхні шаруватого кристалу InSe дозволяє формувати високоякісні плівки ВО уникаючи традиційних процесів шліфування, полірування і травлення та створювати ефективні фотоперетворювачі (ФП). Якщо раніше вивчався вплив опромінення на InSe чи структури на його основі, то метою даної роботи є дослідження радіаційної стійкості (РС) саме плівки ВО селеніду індію, як компоненти ФП власний оксид-ІnSe.
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Richter, Frank. ""Die guten ins Töpfchen, die schlechten ins ..." - Filter für E-Mail." Universitätsbibliothek Chemnitz, 2001. http://nbn-resolving.de/urn:nbn:de:bsz:ch1-200100300.
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Gemeinsamer Workshop von Universitaetsrechenzentrum und Professur "Rechnernetze und verteilte Systeme" der Fakultaet fuer Informatik der TU Chemnitz.
Workshop-Thema: Mobilitaet
Es werden Filtermöglichkeiten für E-Mails vorgestellt,
um die E-Mail-Bearbeitung zu automatisieren und Spam-Mails
und Mails mit gefährlichem Inhalt abzuwehren.
14
Kaufmann, Christian. "Die Berücksichtigung sonstiger Masseverbindlichkeiten des 55 InsO bei der Kostendeckungsprüfung des 26 Abs. 1 Satz 1 InsO /." Bielefeld : Gieseking, 2004. http://www.gbv.de/dms/sbb-berlin/473245868.pdf.
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Dmitriev, A. I. "Layered semiconductor InSe as a standard nanorelief in the metrology of nanoobjects." Thesis, Видавництво СумДУ, 2011. http://essuir.sumdu.edu.ua/handle/123456789/20851.
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Intensive development of nanotechnology requires high-precision measurements on atomic and molecular levels by creating the metrological system for measurements, at the first turn, the length in the nanometer scale. Such measurements require standard
samples of nanorelief surface. High chemical stability and the absence of dangling bonds (defects), low surface roughness of cleaved surface allows to use the Van der Waals surface of InSe single crystals as the standard nanorelief. This is evidenced by the research1es of morphology for Van der Waals surface by scanning tunneling microscopy in which images with atomic resolution were obtained. A single crystal InSe, was grown by vertical Bridgman-Stockbarger method. The crystal has --polytype rhombohedral structure . with periods a = 4.003 Å, and c = 24.9553 Å (in hexagonal axes). Thus InSe is appropriate standard nanorelief for probe microscopy.
When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/20851
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Widany, Anne-Kathrin. "Wohnen bis ins Alter." Master's thesis, Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2011. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-66089.
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In der vorliegenden Arbeit wird der These nachgegangen, dass sich Baugemeinschaften als Wohnform, die von der Gemeinschaft und dem Zusammenleben geprägt ist, im Hinblick auf den demographischen Wandel und dessen Auswirkungen sich zum lebenslangen Bewohnen eignet. Untersucht wurden die baulichen und architektonischen, aber auch sozialen und organisatorischen Gegebenheiten am Beispiel 13 Dresdner Baugemeinschaften. Am Ende liegen Maßnahmen und Empfehlunen für künftige Bauherren und Planer vor<br>The present study traces the hypothesis that joint building ventures as a form of living, that is affected by the community and the cohabit, in view of the demographic change and its effects, are suit to lifelong occupancy. To be proved are the structural and architectural, but also the social and organizational conditions using the example of 13 joint building ventures in Dresden. Finally there are measures and recommendations for future building owners and architects on hand
17
Jansson, Björn, and Sebastian Maghsoudi. "Developing SharePoint add-ins." Thesis, Linköpings universitet, Institutionen för datavetenskap, 2017. http://urn.kb.se/resolve?urn=urn:nbn:se:liu:diva-136719.
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Developing a Microsoft SharePoint-based site is, according to marketing, simple and efficient. Efficiency is increased by giving the developer the option to easily add functionality to the site. One way to add functionality is through so called add-ins. An add-in extends the functionality of the site by running independent code on the client, cloud or a server outside the SharePoint farm. Add-ins can be added to the site through a web-based market or by creating new ones. The general question is if creation of new add-ins is worth the effort. This discussion can begin by investigating what implementation detail is reoccurring when developing this add-ins as well as what part of the process the most time is consuming. By attempting to create add-ins and the same time documenting the progress one can make conclusion regarding said questions. The result shows that the most recurring parts of development is how to manage the incoming data. It also seems as if the most time consuming part of add-in development is the research and construction of functionality that fetch data from the SharePoint-based site. Another part of the result is technical and contains information necessary to understand how the example add-ins are created. The add- ins that is presented in this paper concern document management which is a significant aspect of Microsoft SharePoint.
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Deniz, Derya. "Growth And Characterization Of Inse Single Crystals." Master's thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/12605213/index.pdf.
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In this study, InSe single crystals were grown from the melt using conventional Bridgman-Stockbarger system. The grown crystals were implanted by N-ions to investigate the doping effect. the stoichiometry and the structural features were examined by scanning electron microscope and X-ray diffraction method, respectively. We have observed that the ingot was stoichiometric and the structure was hexagonal. Temperature dependent conductivity and Hall effect measurements were carried out to investigate the electrical properties of as-grown, as-implanted and annealed samples within the temperature range of 80-400 K. To investigate the annealing effect on both the absorption and photoluminescence (PL) spectra, absorption and PL measurements were performed at room temperature.
N-implantation reduced the resistivity order from 103 to 101 (&<br>#937<br>-cm). We have used temperature dependent conductivity and Hall effect measurements to analyze the dominant scattering mechanisms. Hall measurements showed that all the samples had n-type conduction.
Absorption measurements showed that InSe had direct band gap. It was observed that annealing had almost no effect an both room temperature absorption and PL spectra of the samples.
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Yilmaz, Koray. "Investigation Of Inse Thin Film Based Devices." Phd thesis, METU, 2004. http://etd.lib.metu.edu.tr/upload/3/12605431/index.pdf.
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In this study, InSe and CdS thin films were deposited by thermal evaporation method onto glass substrates. Schottky and heterojunction devices were fabricated by deposition of InSe and CdS thin films onto SnO2 coated glass substrates with various top metal contacts such as Ag, Au, In, Al and C. The structural, electrical and optical properties of the films were investigated prior to characterization of the fabricated devices.
The structural properties of the deposited InSe and CdS thin films were examined through SEM and EDXA analysis. XRD and electrical measurements have indicated that undoped InSe thin films deposited on cold substrates were amorphous with p-type conductivity lying in the range of 10-4-10-5 (&<br>#61527<br>.cm)-1 at room temperature. Cd doping and post-depositional annealing effect on the samples were investigated and it was observed that annealing at 100 oC did not show any significant effect on the film properties, whereas the conductivity of the samples increased as the Cd content increases. Temperature dependent I-V and Hall effect measurements have shown that conductivity and carrier concentration increases with increasing absolute temperature while mobility is almost temperature independent in the studied temperature range of 100-430 K.
The structural and electrical analysis on the as-grown CdS thin films have shown that the films were polycrystalline with n-type conductivity. Temperature dependent conductivity and Hall effect measurements have indicated that conductivity, mobility and carrier concentrations increases with increasing temperature. Transmission measurements on the as-grown InSe and CdS films revealed optical band gaps around 1.74 and 2.36 eV, respectively.
Schottky diode structures in the form of TO/p-InSe/Metal were fabricated with a contact area of around 8x10-3 cm2 and characterized. The best rectifying devices obtained with Ag contacts while diodes with Au contacts have shown slight rectification. The ideality factor and barrier height of the best rectifying structure were determined to be 2.0 and 0.7 eV, respectively. Illuminated I-V measurements revealed open-circuit voltages around 300 mV with short circuit current 3.2x10-7 A. High series resistance effect was observed for the structure which was found to be around 588 &<br>#61527<br>. Validity of SCLC mechanism for Schottky structures was also investigated and it was found that the mechanism was related with the bulk of InSe itself.
Heterostructures were obtained in the form of TO/n-CdS/p-InSe/Metal and the devices with Au and C contacts have shown the best photovoltaic response with open circuit voltage around 400 mV and short circuit current 4.9x10-8 A. The ideality factor of the cells was found to be around 2.5. High series resistance effect was also observed for the heterojunction devices and the fill factors were determined to be around 0.4 which explains low efficiencies observed for the devices.
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Fuhrmann, Insa [Verfasser]. "Time for Reactive System Modeling / Insa Fuhrmann." Kiel : Universitätsbibliothek Kiel, 2018. http://d-nb.info/1175507733/34.
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Mirza, Benjamin Imran. "Mid-infrared INSb/A1InSb light-emitting diodes." Thesis, University of Bristol, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.503928.
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Electrical and optical properties of bulk and quantum-well (QW) InSb/AlˣIn₁-ˣSb midinfrared light-emitting diodes (LEDs) have been investigated as a function of temperature and injection current. Measured current-voltage characteristics are rectifying across all temperatures and aluminium compositions for each of the devices. For the QWLEDs, experimentally measured emission spectra are compared to the theoretical equivalent, enabling individual optical transitions in the QW to be attributed to observable features.
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Reichow, Insa [Verfasser]. "Students’ Affective-Motivational Research Dispositions / Insa Reichow." Berlin : Humboldt-Universität zu Berlin, 2021. http://d-nb.info/123328598X/34.
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Ковалюк, З. Д., І. В. Мінтянський та П. І. Савицький. "Анізотропія провідності в електрон-опроміненому n-InSe". Thesis, Сумський державний університет, 2015. http://essuir.sumdu.edu.ua/handle/123456789/40645.
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Енергетичні зони, які формують край фундаментального поглинання InSe, мають тривимірний характер і в ідеальному випадку анізотропія електропровідності повинна бути низькою та не залежати від температури.
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Кушнір, Б. В. "Фотоелектричні властивості гетероструктури p-GaTe - n-InSe". Thesis, Сумський державний університет, 2016. http://essuir.sumdu.edu.ua/handle/123456789/45870.
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Шаруваті кристали групи А[3]В[6], до яких належать селенід індію та теллурид галію, є перспективними матеріалами для створення гетеропереходів на їх основі. Ці матеріали з різною симетрією і періодами кристалічної решітки дозволяють методом ван-дер-ваальсового контакту їх поверхонь створювати якісні гетероструктури.
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Боледзюк, В. Б., З. Р. Кудринський та З. Д. Ковалюк. "Феромагнетизм у шаруватих кристалах InSe, інтеркальованих кобальтом". Thesis, Сумський державний університет, 2013. http://essuir.sumdu.edu.ua/handle/123456789/43573.
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Досліджені магнітні властивості шаруватих кристалів Co[0,15]InSe, інтеркальованих кобальтом електрохімічним способом в зовнішньому магнітному полі та без магнітного поля. Встановлено, що феромагнітне впорядкування при кімнатній температурі спостерігається тільки
для кристалів Co[0,15]InSe, інтеркальованих іонами Co[+2] у магнітному полі. Для цих кристалів, інтеркальованих без магнітного поля, гістерезис на кривих намагнічення при Т = 300 К не спостерігався.
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Pooley, Oliver James. "Electron transport in InSb/AlInSb semiconductor heterostructures." Thesis, University of Manchester, 2011. https://www.research.manchester.ac.uk/portal/en/theses/electron-transport-in-insbalinsb-semiconductor-heterostructures(42798359-2505-4a29-bfea-a32283c84fc6).html.
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InSb has the lowest bulk electron effective mass and the narrowest band gap of the III-V semiconductors, as well as a large dielectric constant and Lande g-factor, as a result of strong spin orbit coupling. These properties make it an exciting candidate for many different applications including high speed electronics and spintronics.This thesis presents a series of investigations on InSb/AlInSb quantum well (QW) heterostructures. The nature of transport through samples is characterised using magneto-transport measurements including Hall measurement, quantum Hall measurement, and Shubnikov de Haas oscillations. The QW 2 dimensional electron gas (2DEG) carrier densities and mobilities are extracted along with carrier densities and mobilities for transport parallel to the 2DEG. The mobilities are explained in terms of the various scattering mechanisms postulated to be present. The importance of thermally generated carriers in the lower AlInSb barrier material and the role of screening by carriers within the delta-doping plane are considered. A surface gate incorporating a gate dielectric is shown to significantly modify the transport properties and results in an increased mobility over ungated structures with the same carrier density.The measurement and analysis of transport into a 2DEG (Schottky barrier) is also presented and this transport modelled in the thermionic emission regime (by incorporation of an ideality factor) and the tunnelling regime. Gate electrodes are then used to confine the electrons in the 2DEG further to 1D. Conductance measurements are presented on split gates, demonstrating well formed conductance quantisation steps. The sensitivity of the steps presented suggest that split gates on InSb/AlInSb heterostructures could make suitable charge detectors in an electron spin qubit, an application which pushes InSb into being a practical candidate for quantum information devices.
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Khatouri, Driss el. "Phénomènes de transport du composé lamellaire InSe." Grenoble 2 : ANRT, 1988. http://catalogue.bnf.fr/ark:/12148/cb37614710s.
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Stavish, Kenneth V. "Resilience Analysis of Inertial Navigation Systems (INS) through an Enhanced INS Tool Kit." Thesis, The George Washington University, 2018. http://pqdtopen.proquest.com/#viewpdf?dispub=10743838.
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<p> Resilience is explained as an entity’s capacity to survive and recover from disruptions. Approaches to design resilient systems are in growing demand; however, there have been few demonstrations for measuring and quantifying systems resilience. This research presents a Resilience Analysis regarding Inertial Navigation System (INS) architectures. Specifically for the case study at hand, it is not clear which INS architecture to choose (tightly coupled or loosely coupled) for resilience. This research tests whether Robustness and Recovery measures of effectiveness (MOEs) can be used to determine which INS architecture is most resilient. </p><p> The methodology of this research included enhancing an INS Tool Kit with Resilience Analysis functions. The INS Tool Kit was used to collect resilience data for different INS configurations dealing with Global Positioning System (GPS) outages. Robustness and Recovery data were collected for 500 observations of five different INS configurations. Three configurations were loosely coupled and two were tightly coupled; therefore, 1500 observations of resilience data for loosely coupled INS were compared to 1000 observations for tightly coupled INS. Using data from this Resilience Analysis, a series of nonparametric Mann-Whitney tests showed there is a statistically significant difference between tightly coupled and loosely coupled INS architectures in terms of resilience. Based on these results, greater resilience to GPS outages can be added to the list of advantages for tightly coupled INS architectures. The conclusion of this research is that Robustness and Recovery measures can be used to determine and compare the resilience of different INS architectures. </p><p>
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Abautret, Johan. "Conception, fabrication et caractérisation de photodiodes à avalanche InSb." Thesis, Montpellier 2, 2014. http://www.theses.fr/2014MON20232.
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Cette thèse, réalisée à l'IES en partenariat avec la société SOFRADIR et le CEA-LETI, avait pour objectif d'évaluer les potentialités du matériau InSb pour la réalisation de photodiodes à avalanche (APD) moyen infrarouge (MWIR). Par l'étude du design (simulations TCAD), de la fabrication technologique en configuration MESA (voie humide, voie sèche, passivation), puis par la caractérisation électrique des dispositifs, ce travail de thèse s'est attaché à explorer l'ensemble des éléments nécessaires au développement de cette filière de photodétecteurs. Les photodiodes InSb fabriquées par épitaxie par jets moléculaires (EJM) ont présenté des densités de courant d'obscurité sur des monoléments de 10 à 30nA/cm² à -50mV et à 77K. Ces performances positionnent ces photodiodes à l'état de l'art pour la filière épi-InSb et souligne ainsi l'excellente qualité cristalline des couches épitaxiées. Les premières APDs InSb ont ensuite été épitaxiées et caractérisées. Avec une pure injection d'électrons nous avons observé une augmentation exponentielle du gain dans l'InSb, signature d'une multiplication initiée exclusivement par les électrons. Un premier gain de 3 à -4V a été mesuré. Cette asymétrie du processus d'ionisation par impact indiquerait la possibilité d'obtenir du gain sans excès de bruit, propriété indispensable pour les applications d'imagerie faible flux visée. A ce stade de l'étude, les performances des APDs InSb sont limitées par un dopage résiduel trop élevé dans les zones de multiplications réalisées, entrainant une forte contribution du courant tunnel bande à bande. Néanmoins, ces travaux fournissent tous les éléments d'orientations nécessaires au développement des APDs InSb dont le point clé est définitivement l'obtention d'un faible dopage résiduel dans la zone de multiplication<br>This thesis realized at the IES, with the collaboration of SOFRADIR and the CEA-LETI, had for objective the potential evaluation of the InSb material for the realization of midwave infrared (MWIR) avalanche photodiodes (APD). Studying the design (TCAD modeling), the MESA technological fabrication (wet etching, dry etching, passivation) and analyzing the electrical characterizations of devices fabricated, this work has investigated all the scientific elements necessary for the development of this photodetector technology. The MBE (Molecular Beam Epitaxy) grow InSb photodiodes have shown monopixel dark current density from 10 to 30nA/cm² at -50mV and 77K. These performances are at the state of the art for InSb epi-diodes and highlight the excellent crystal quality of the epitaxial layers. The first InSb APDs were grown and characterized. With a pure electron injection, we have observed an exponential increase of the gain, signature of a single carrier multiplication exclusively initiated by the electrons. A gain value of 3 was measured at -4V. This asymmetrical aspect of the impact ionization process would indicate the possibility to obtain a gain without excess noise. This is fundamental for the intended imaging applications. At this stage, InSb APD performances are limited by a too high residual doping level, resulting in a strong band to band tunneling current. Nevertheless, this work provides all the milestones needed for the InSb APD development where the key point is undoubtedly the getting of low residual doping level in the multiplication layer
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Rühle, Thomas. "Gegenseitige Verträge nach Aufhebung des Insolvenzverfahrens : Ansprüche aus gegenseitigen "schwebenden" Verträgen gem. [Para] 103 InsO nach vollzogener Schlussverteilung ([Para] 200 Abs. 1 InsO) und rechtskräftig bestätigtem Insolvenzplan ([Para] 258 Abs. 1 InsO) /." Berlin : de Gruyter, 2006. http://deposit.ddb.de/cgi-bin/dokserv?id=2773640&prov=M&dok%5Fvar=1&dok%5Fext=htm.
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Mullings, Jason Andrew. "Spatio-temporal behaviour of optically bistable InSb etalons." Thesis, Heriot-Watt University, 1995. http://hdl.handle.net/10399/1337.
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Harper, R. E. "Anomalous nuclear spin-lattice relaxation peaks in InSb." Thesis, University of St Andrews, 1986. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.373036.
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Salazar, Josiane Bueno. "Efeitos da irradiação iônica em filmes de InSb." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/173027.
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Neste trabalho são apresentados os efeitos da irradiação iônica em lmes de InSb crescidos por epitaxia de feixe molecular e desbastamento iônico. As irradiações foram realizadas a temperatura ambiente, em incidência normal, com íons de Au a uma energia de 17 MeV, com fluências de irradiação que variam entre 5 1010 e 1 1015 ons/cm2. A an alise da microscopia eletrônica de transmissão realizada em amostras de InSb cristalina mostram que a porosidade inicia com pequenas esferas ocas de aproximadamente 2-3nm de diâmetro, sem a evidência de ion tracks amorfos, mas com estruturas altamente danificada. Com o aumento da fluência de irradiação, a coalescência de um grande número de poros produz rede interligada de nano os policristalinos. A evolução da porosidade em função da fluência de irradiação foi investigada com imagens de microscopia eletrônica de varredurra, e mostra que a espessura do lme aumenta em até 15 vezes. Os resultados de difração de raios x obtidos mostram que lmes de InSb crescidos por epitaxia de feixe molecular ou por sputtering podem se tornar porosos quando submetidos a irradiação iônica e atingem uma estrutura policristalina com cristalitos randomicamente orientados. Os espectros de RBS indicam a incorporação de C e um aumento na fração de O no material poroso, embora a quantidade de atomos de In e Sb não mude significativamente devido a irradiação. A caracterização eletrônica da XPS mostra que, com aumento da fluência de irradiação, as ligações In-Sb e In-O não mudam e, por outro lado, as ligações Sb-O aumentam e as Sb-In diminuem. As propriedades elétricas foram investigadas com medidas de efeito Hall, e mostram que, com o aumento da fluência de irradiação, há uma diminuição na mobilidade dos portadores devido aos defeitos criados pela irradiação, por em há o aumento do número de portadores.<br>Here we show the e ects of ion irradiation on InSb lms grown by molecular beam epitaxy and sputtering. The irradiations were performed at room temperature under normal incidence, with 17MeV Au ions with irradiation uences ranging from 5 1010 e 1 1015 ons/cm2. Transmission electron microscopy analysis performed in crystalline InSb samples shows that porosity initiates as small spherical voids of approximately 2-3nm in diameter, with no evidence of amorphous ions tracks, but highly damaged crystalline structures . With increasing irradiation uence, the coalescence of a large number of small voids yields an interconnected network of polycrystalline nanowires. The evolution of porosity as a function of irradiation uence was investigated with scanning electron microscopy images, and shows that the lm thickness increases up to 15 times. X-ray di raction results show that InSb lms grown by molecular beam epitaxy or by sputtering can become porous upon ion irradiation and attain a polycrystalline structure with randomly oriented crystallites. RBS spectra indicate of incorporation of C and an increase in O fraction in the porous material, although the amount of In and Sb atoms do not change signi cantly due to irradiation. The electronic characterization by XPS shows that, with increasing irradiation uence, In-Sb and In-O bonds do not change, on other hand Sb-O bonds increases and Sb-In decreases. Electrical properties were investigated with measures of Hall e ect, and show that, increasing irradiation uence, there is a decrease in carriers mobility due to defects created by the irradiation, however there is an increase in carriers amount.
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Фешак, Т. М. "Вплив інтеркалювання “Wine” на імпеданс шаруватих кристалів InSe". Thesis, Сумський державний університет, 2015. http://essuir.sumdu.edu.ua/handle/123456789/40975.
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Останнім часом значна увага приділяється одержанню і дослідженню властивостей шаруватих напівпровідників та створенню на їх основі нових приладів. Саме наявність в кристалічній структурі
шаруватих кристалів слабкого ван-дер-ваальсового зв’язку дає можливість впроваджувати іони, атоми або молекули.
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Katerynchuk, V. M., and Z. R. Kudrynskyi. "Properties of In2O3-InSe heterostructures with nanostructured oxide." Thesis, Видавництво СумДУ, 2012. http://essuir.sumdu.edu.ua/handle/123456789/27610.
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Шевчик, В. В., В. Б. Боледзюк та В. В. Нетяга. "Вплив інтеркаляції кобальту на електричні властивості монокристалів InSe". Thesis, Сумський державний університет, 2014. http://essuir.sumdu.edu.ua/handle/123456789/39771.
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Cполуки впровадження на основі моноселеніду індію, що містять магнітні домішки, є новим класом сполук. Актуальність даного напрямку зумовлена значним інтересом науковців до досліджень і створення нових матеріалів та структур, що володіють феромагнітними властивостями.
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Sticksel, Christoph. "Efficient equational reasoning for the Inst-Gen Framework." Thesis, University of Manchester, 2011. https://www.research.manchester.ac.uk/portal/en/theses/efficient-equational-reasoning-for-the-instgen-framework(67ead780-3ec9-4897-ac17-48d3de011b4b).html.
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We can classify several quite different calculi for automated reasoning in first-order logic as instantiation-based methods (IMs). Broadly speaking, unlike in traditional calculi such as resolution where the first-order satisfiability problem is tackled by deriving logical conclusions, IMs attempt to reduce the first-order satisfiability problem to propositional satisfiability by intelligently instantiating clauses. The Inst-Gen-Eq method is an instantiation-based calculus which is complete for first-order clause logic modulo equality. Its distinctive feature is that it combines first-order reasoning with efficient ground satisfiability checking, which is delegated in a modular way to any state-of-the-art ground solver for satisfiability modulo theories (SMT). The first-order reasoning modulo equality employs a superposition-style calculus which generates the instances needed by the ground solver to refine a model of a ground abstraction or to witness unsatisfiability. The thesis addresses the main issue in the Inst-Gen-Eq method, namely efficient extraction of instances, while providing powerful redundancy elimination techniques. To that end we introduce a novel labelled unit superposition calculus with sets, AND/OR trees and ordered binary decision diagrams (OBDDs) as labels. The different label structures permit redundancy elimination each to a different extent. We prove completeness of redundancy elimination from labels and further integrate simplification inferences based on term rewriting. All presented approaches, in particular the three labelled calculi are implemented in the iProver-Eq system and evaluated on standard benchmark problems.
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Orr, James Michael Sean. "Low-dimensional transport measurements in InSb heterostructure devices." Thesis, University of Manchester, 2008. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.589426.
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VERMA, Isha. "InSb nanostructures: growth, morphology control and transport properties." Doctoral thesis, Scuola Normale Superiore, 2022. https://hdl.handle.net/11384/125802.
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Bemmann, Katrin, and Steffen Voss. "Ein Notenschrank wandert ins Internet." Saechsische Landesbibliothek- Staats- und Universitaetsbibliothek Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:14-qucosa-32975.
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Das Notenmaterial der Dresdner Hofkapelle aus dem 18. Jahrhundert zählt zu den musikhistorischen Kostbarkeiten im Besitz der SLUB Dresden. Die 1896 an die damalige Königliche öffentliche Bibliothek gelangten 1 750 Manuskripte werden in einem DFG-geförderten Projekt „Die Instrumentalmusik der Dresdner Hofkapelle zur Zeit der sächsisch-polnischen Union“ seit 2008 wissenschaftlich erfasst und digitalisiert. Bisher stehen 895 Digitalisate frei zur Verfügung.
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Singh, Mahendra, Stuart McNamee, and Allen Khosrowabadi. "MODULAR AFFORDABLE GPS/INS (MAGI)." International Foundation for Telemetering, 1999. http://hdl.handle.net/10150/607342.
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International Telemetering Conference Proceedings / October 25-28, 1999 / Riviera Hotel and Convention Center, Las Vegas, Nevada<br>The GPS/INS equipment is used at the Air Force Flight Test Center (AFFTC) to collect
time space position information (TSPI) during testing. The GPS-based test
instrumentation is lagging behind available commercial technologies. Advancing
technologies for test use requires investigation of affordable commercial equipment. To
enable technology insertion for state of the art testing, there is a need for more robust,
flexible, reliable, modular, affordable low cost TSPI systems capable of operating in all
flight environments. Modular (plug-and-play) hardware and software, quick and easy to
re-configure, are required for supporting various test platforms from fighter aircraft to
cargo size aircraft. Flight testing dynamics are such that, GPS-only systems tend to lose
data during critical maneuvers. To minimize this data loss, inertial measurement systems
coupled with GPS sensors are used in most sophisticated range instrumentation packages.
However, these packages have required fairly expensive inertial units, are usually very
large and not very flexible in terms of quick and easy reconfiguration to meet the unique
needs of AFFTC’s test customers. WADDAN SYSTEMS has begun to address this
problem with a modular design concept, which incorporates their high-performance
navigation quality inertial measurement unit, but with costs comparative to that of lower-end
performance inertial units. This paper describes WADDAN’s concept and the
components that make up MAGI; and addresses some of the preliminary testing and near-term
proposed activities. In general, the system will provide GPS, inertial and discrete
MIL-STD 1553, RS-232/422 and video data from the participant. The MAGI will be
structured around the Compact personal computer interface (PCI) backplane bus with on-board
recording and processing and will include real-time command and control through
a UHF data link.
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Campos, Tiago de. "Spin-orbit coupling effects and g-factors in zinc-blende InSb and wurtzite InAs nanowires using realistic multiband k · p method." Universidade de São Paulo, 2017. http://www.teses.usp.br/teses/disponiveis/76/76132/tde-30012018-163011/.
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Spin-dependent phenomena in semiconductor nanowires have recently gained a lot of attention, in special because these nanostructures can be a viable setup to study exotic states of matter like the Majorana fermions. One of the key ingredients to accommodate the Majorana zero modes is the spin-orbit coupling in the nanowires, which has been usually treated with two-band Hamiltonians. The spin-orbit coupling in semiconductors arise from two distinct sources being the bulk inversion asymmetry, when the unit cell does not present inversion symmetry, e.g. when the crystal unit cell is composed by two different atoms, and the structural inversion asymmetry, when the whole system does not have a mirror symmetry. To describe the system these effective models take as input, parameters that are dependent on the system configuration and measurement setups. Although these effective models have been successful in determine relevant physical properties, a more realistic description of the interacting energy bands is required, specially in quantum confined systems where the interplay between both sources of spin-orbit coupling can change the systems properties in non-trivial ways. For instance, in quantum wells there is an anisotropy of the g-factor due to the quantum confinement and structural inversion asymmetry. Furthermore, the in-plane g-factor also have an anisotropy which is due to the intrinsic spin-orbit coupling and it is not captured by these effective models. In this study, we use realistic multiband k · p Hamiltonians, including both spin-orbit coupling mechanisms, to determine the band structure of zincblende InSb and wurtzite InAs nanowires under a transverse electric field. We analyze the effects of the lateral quantum confinement for a hexagonal cross-section geometry and of the change in growth directions, extracting the relevant physical parameters for the first conduction subband. We found that the g-factors are heavily dependent on the quantum confinement and nanowire orientation, with in-plane/out-of-plane anisotropies up to 3%. We also found that for zinc-blende nanowires the extrinsic spin-orbit coupling is dominant over the intrinsic one whereas, for wurztize, the opposite behavior holds. In order to assess if the nanowires could host the aforementioned Majorana zero modes we investigate under which circumstances the topological phase transition occurs, using the Bogoliubov-de Gennes formalism to couple the nanowire with a superconductor, and we found that using realistic and experimental feasible parameters, indeed, the phase transition occurs. In conclusion, our systematic investigation of nanowires shows that the spin-orbit coupling energy can be fine tuned by the external electric field in experimentally achievable setups that ultimately could guide the search for the elusive Majorana modes. Moreover, our numerical approach is not restricted to a specific material or dimensionality and can be used to study others systems to provide useful insights into the electronic and spintronic fields.<br>Recentemente, fenômenos dependentes de spin em nanofios semicondutores se tornaram uma área de pesquisa ativa especialmente porque essas nanoestruturas podem ser viáveis para o estudo de estados exóticos da matéria como, por exemplo, os férmions de Majorana. Um dos ingredientes chave para que esses modos de excitação possam existir em nanofios é o acoplamento spin-órbita, o qual tem sido usualmente tratado com modelos de duas bandas. O acoplamento spin-órbita em semicondutores aparece de duas fontes distintas sendo elas a assimetria de inversão no bulk, quando a célula unitária do cristal não possui simetria de inversão, por exemplo, quando é formada por dois átomos diferentes, e a assimetria de inversão estrutural, quando o sistema como um todo não possui simetria de inversão. Para descrever o sistema, os modelos efetivos de duas bandas usam como entrada parâmetros que dependem tanto do sistema específico quanto da configuração do arranjo experimental. Apesar desses modelos terem sucesso em descrever algumas das propriedades físicas relevantes, uma descrição mais realística da interação entre as bandas de energia se faz necessária, especialmente em sistemas com confinamento quântico onde a ação combinada das duas fontes de acoplamento spin-órbita muda as propriedades do sistema de maneira não-trivial. Por exemplo, o fator giromagnético em poços quânticos é anisotrópico devido aos efeitos de ambos, confinamento quântico e a assimetria de inversão estrutural. Ademais, o fator giromagnético ao longo do plano também possui uma anisotropia, a qual tem origem no acoplamento spin-órbita intrínseco do sistema e não é capturada por esses modelos efetivos. Nesse estudo, nós usamos Hamiltonianos k · p multibanda, incluindo ambos os mecanismos de acoplamento spin-órbita, para determinar a estrutura de bandas de nanofios de InSb na fase blenda de zinco e InAs na fase wurtzita sob a ação de um campo elétrico transversal. Nós analisamos os efeitos do confinamento quântico lateral, para fios com seção transversal hexagonal, e diferentes direções de crescimento, extraindo parâmetros físicos relevantes para a primeira sub-banda de condução. Nós encontramos que os fatores giromagnéticos são fortemente influenciados pelo confinamento quântico e orientação dos nanofios, com anisotropias no plano e fora do plano de até 3%. Nós também encontramos que para nanofios de InSb na fase blenda de zinco, o acoplamento spin-órbita extrínseco domina o intrínseco enquanto que, em nanofios de InAs na fase wurtzita, vale o oposto. Para avaliar se os nanofios podem hospedar os modos de Majorana de energia zero nós investigamos sob quais circunstâncias a transição de fase topológica ocorre usando o formalismo de Bogoliubov-de Gennes para acoplar o nanofio a um supercondutor, e encontramos que usando nossos parâmetros e em condições experimentalmente factíveis, de fato, a transição de fase ocorre. Em conclusão, nossa investigação sistemática nos nanofios mostrou que o acoplamento spin-órbita pode ser ajustado por fontes externas, tais como um campo elétrico aplicado, e em configurações experimentais factíveis e que ultimamente pode guiar à busca dos elusivos modos de Majorana. Além do mais, nossa abordagem numérica não é restrita a esses materiais em específico e nem a nanofios, podendo ser usada para estudar outros sistemas provendo intuições úteis nos campos de eletrônica e spintrônica.
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Gigliucci, Paulo Henrique Cova. "Crédito consignado a aposentados e pensionistas do INSS: evolução e fatores de sua expansão." Universidade de São Paulo, 2012. http://www.teses.usp.br/teses/disponiveis/12/12138/tde-29032012-183533/.
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A modalidade de crédito consignado para aposentados e pensionistas do INSS foi introduzida no final de 2004, e a partir desta data houve um ritmo muito rápido de contratação do novo produto, que se tornou a principal modalidade de crédito no segmento. Estudamos a difusão do novo produto através de um modelo baseado em escolha discreta, e efetuamos a decomposição da expansão em dois fatores: crescimento do mercado de crédito e substituição de outros créditos. Obtivemos que, durante os primeiros 12 meses de sua introdução, compreendidos entre Set/04 e Ago/05, foi onde houve o maior crescimento ajustado e a expansão foi caracterizada pelo crescimento do mercado de crédito, enquanto nos 25 meses subsequentes (Set/05 a Set/07), o crescimento ajustado foi menor e a expansão foi caracterizada por substituição de outros créditos.<br>Payroll loans for social security (INSS) beneficiaries were introduced at September of 2004. From this date to the end of studied period (Sep/07), this loan type had been adopted at a very fast rate, eventually becoming the main product in its credit market segment. We studied the diffusion of this new credit product using a choice based diffusion model, and decomposed growth in two factors: credit market expansion and substitution of other loans. In the first 12 months from introduction, between Sep/04 e Aug/05, where most of adjusted growth was observed, growth was motivated by credit market expansion, where in the following 25 months (Sep/05 to Sep/07), adjusted growth rate was lower, and growth was motivated by substitution of other loans.
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Tumkaya, Umid. "Performance Assesment Of Indium Antimonide Photodetectors On Silicon Substrates." Thesis, METU, 2003. http://etd.lib.metu.edu.tr/upload/756403/index.pdf.
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In this study, detailed characteristics and performance assessment of 3&<br>#8722<br>5
µ<br>m p-i-n InSb photodetectors on Si substrates are reported. The detector epilayers were grown on GaAs coated Si substrates by molecular beam apitaxy (MBE). Both homojunction and single heterojunction (AlInSb/InSb) detector structures were investigated. Arrays of 33x33 µ<br>m2 detectors were fabricated and flip-chip bonded to a test substrate for detailed electrical and optical characterization. A peak detectivity as high as 1x1010 cmHz1/2/W was achieved with InSb homojunction
detectors on Si substrate in spite of the large lattice mismatch between InSb and Si (%19). In both homojunction and single heterojunction structures the differential resistance is significantly degraded by trap assisted tunneling (TAT) under moderately large reverse bias and by ohmic leakage near zero-bias. While the heterojunction structures provide a higher 80 K zero bias differential resistance, the
responsivity of this structure is significantly lower than that of homojunction InSb photodiodes. In both homojunction and heterojunction photodetectors, 80K 1/f noise is dominated by TAT processes, and the noise current at 1 Hz follows the
empirical relation in= &<br>#945<br>TAT(ITAT) &<br>#946<br>with &<br>#945<br>TAT&<br>#8764<br>1.1x10&<br>#8211<br>6 and &<br>#946<br>&<br>#8764<br>0.53.
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Chua, Peter Lim. "Free-carrier absorption and nonlinear refraction in indium antimonide at 10.6 μm wavelength". Thesis, Heriot-Watt University, 1989. http://hdl.handle.net/10399/967.
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Kim, Yong-Jae. "Electrical injection and detection of spin polarization in InSb/ferromagnet nanostructures." Diss., Virginia Tech, 2012. http://hdl.handle.net/10919/28589.
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We present studies of the electical detection of spin injection and transport in InSb/CoFe heterostructures. As a narrow gap semiconductor, InSb has a high mobility and strong spin-orbit interaction. Using ferromagnetic CoFe, lateral InSb/CoFe devices are fabricated by semiconductor processing techniques. The saturation magnetizations of various CoFe electrodes with different widths are calculated from Hall measurements in which the fringing fields of the CoFe electrodes are detected. A magnetic model provides reasonable estimation of the saturation magnetization for micrometer scale geometries. The interface magnetoresistance measurements of InSb/CoFe thin film layered structures present a unique peak at low field, having a symmetric behavior in magnetic field with a critical field Hc and a strong temperature dependence. We attribute our signal to a ferromagnetic phase in the InSb induced by spin injection. In a non-local lateral spin valve measurement, we observed the following. Firstly, Hc of the lateral spin valve signals is identical to Hc of interface magnetoresistance signals. Secondly, the non-local lateral spin valve signals are strongly dependent on temperature, which is also a unique characteristic magnetoresistance. Thirdly, the signals are tunable in response to an applied injector bias. Lastly, the signals are dependent on the exact interfaces. Based on these observations, the detected signals may be considered as spin current signals. The Hall and magnetoresistance signals are measured locally and non-locally in InSb/CoFe Hall devices. The non-local magnetoresistance signals exhibit asymmetric behavior in applied magnetic field which are considered as signatures of spin phenomena. The non-local Hall signals present switching behavior with the CoFe magnetization switching at the coercive field. The non-local Hall signals in a perpendicular field show Hc, similarly seen in non-local lateral spin valves. Inverse spin Hall effect measurements with tilted magnetic fields show an in-plane magnetic field dependence in non-local type Hall signal and a perpendicular magnetic field dependence in the local Hall measurement. We have found that the signal can have its origin in a spin current from our observation of Hc and hysteresis in the magnetization traces. As yet, the spin current transport mechanism is unknown.<br>Ph. D.
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Gardellin, Valentina <1995>. "Thea Sternheims Tagebücher: Übersetzung ins Italienische von ausgewählten Textpassagen mit Einführung ins Leben der Autorin." Master's Degree Thesis, Università Ca' Foscari Venezia, 2022. http://hdl.handle.net/10579/21647.
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Questa tesi ha come oggetto di studio la figura di Thea Sternheim (25 novembre 1883 – 5 luglio 1971), scrittrice tedesca nota soprattutto per aver dedicato oltre sessant'anni della sua vita alla stesura dei suoi diari. Viene proposta la traduzione di una serie di passi tratti dai diari, preceduta da un’ampia introduzione all’autrice.
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Bergenthal, Vanessa Grasiela. "Balanced scorecard no instituto nacional do seguro social: uma análise segundo a percepção dos servidores da linha de frente." Universidade Federal de Santa Maria, 2012. http://repositorio.ufsm.br/handle/1/4634.
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Strategic planning is a management tool consolidated and embraced by both private and public organizations. One of the most widely used models in this sense is the Balanced Scorecard. It happens that the use of this model in public organizations requires more attention and adaptations, since one of its four perspectives (financial) loses importance. Furthermore, studies show that to succeed, the Balanced Scorecard must be disclosed and understood by all members of the organization, especially by the servants that actuate at the operational level, who understand the dynamics and peculiarities of the daily work and could suggest important procedures improvements. The INSS uses the Balanced Scorecard as a strategic management model, outlining a strategy map for the period 2009-2015. This study aimed to verify if the tool adopted is known and understood by frontline servants. To this end, questionnaires and interviews were applied to the servants that operate at the INSS's Executive Management frontline in Santa Maria-RS, aiming to collect and analyze such perceptions. The result shows that these servants evaluate the Balance Scorecard positively, but points out some problems and suggestions that can support the decisions making process of the INSS's senior administration.<br>O planejamento estratégico é uma ferramenta de gestão já consolidada que tem sido adotada tanto em organizações privadas quanto públicas. Um dos modelos mais utilizados, nesse sentido, é o Balanced Scorecard. Ocorre que o uso desse modelo em organizações públicas requer maior atenção e adaptações, visto que uma das suas quatro perspectivas ( a financeira) perde importância. Além disso, estudos demonstram que para ter sucesso, o Balanced Scorecard precisa ser divulgado e compreendido por todos os membros da organização, especialmente aqueles servidores que atuam no nível operacional, que compreendem a dinâmica e peculiaridades do trabalho e podem vir a sugerir melhorias importantes no processo. O INSS adotou o Balanced Scorecard como modelo de gestão estratégica, traçando um mapa estratégico para o período de 2009-2015. Este trabalho buscou verificar se o BSC adotado pelo INSS é conhecido e compreendido pelos servidores da linha de frente. Para isso, foram aplicados questionários e entrevistas com os servidores que atuam na linha de frente na Gerência Executiva do INSS em Santa Maria-RS, visando coletar e analisar tais percepções. O resultado demonstra que estes servidores avaliam positivamente o instrumento, mas apontam alguns problemas e sugestões que podem subsidiar decisões da alta direção do INSS.
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TEIXEIRA, JUNIOR João Bosco. "Sistema de georreferenciamento direto para câmara de pequeno formato com sicronismo GPS." Universidade Federal de Pernambuco, 2010. https://repositorio.ufpe.br/handle/123456789/2921.
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Previous issue date: 2010<br>O uso de imagens aéreas é uma das maneiras mais rápidas de se obter dados
cartográficos de uma região e a demanda tem crescido nos últimos anos nos mais diversos
campos da engenharia ou fora dela, como o projeto e fiscalização de obras ou análise de
impactos ambientais. Por outro lado o processo convencional de levantamento aéreo é caro
e demorado, restringindo o seu uso a projetos de maior porte. Muito do custo do processo
convencional está relacionado aos equipamentos e software utilizados. Sendo assim, tem-se
estudado formas de reduzir esses custos utilizando câmaras digitais não métricas de
pequeno formato para levantamentos de pequenas áreas e aplicações especiais. Portanto, o
objetivo deste trabalho é especificar e implementar um sistema de aquisição de imagens,
com hardware e software de baixo custo, no sentido de facilitar o uso de câmaras não
métricas na aquisição de imagens aéreas. O sistema é composto de câmara digital de
pequeno formato, integrado com receptor GPS para controle do disparo e sistema inercial
formado por giroscópios e acelerômetros
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Pruisken, Insa [Verfasser]. "Fusionen im institutionellen Feld "Hochschule und Wissenschaft" / Insa Pruisken." Baden-Baden : Nomos Verlagsgesellschaft mbH & Co. KG, 2014. http://d-nb.info/1107605253/34.
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