Relevant bibliographies by topics / Insulated gate bipolar transistors (IGBTs)

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Insulated gate bipolar transistors (IGBTs)'

Author: Grafiati
Published: 5 June 2025
Last updated: 2 August 2025

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Journal articles on the topic "Insulated gate bipolar transistors (IGBTs)"

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Inampudi, Prasannakumar, P. Chandrasekar, and T. Vijay Muni. "Evaluating a novel bidirectional soft-switching DC-DC converter for electric vehicles." International Journal of Applied Power Engineering (IJAPE) 13, no. 4 (2024): 825. http://dx.doi.org/10.11591/ijape.v13.i4.pp825-834.

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This research aims to build unique zero voltage transition (ZVT) non-isolated bidirectional DC-DC converters for hybrid electric vehicle battery storage. First, a high-voltage gain bidirectional converter (BDC) is examined. This converter can soft-switch insulated gate bipolar transistors (IGBTs). The primary insulated-gate bipolar transistors (IGBTs) are operated under zero-current conditions throughout the turn-on to turn-off commutation phase to reduce switching losses and increase efficiency. A soft-switched cell with a resonant inductor, capacitor, and additional IGBTs achieves zero-curre
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Inampudi, Prasannakumar, P. Chandrasekar, and T. Vijay Muni. "Evaluating a novel bidirectional soft-switching DC-DC converter for electric vehicles." International Journal of Applied Power Engineering 13, no. 4 (2025): 825–34. https://doi.org/10.11591/ijape.v13.i4.pp825-834.

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This research aims to build unique zero voltage transition (ZVT) non-isolated bidirectional DC-DC converters for hybrid electric vehicle battery storage. First, a high-voltage gain bidirectional converter (BDC) is examined. This converter can soft-switch insulated gate bipolar transistors (IGBTs). The primary insulated-gate bipolar transistors (IGBTs) are operated under zero-current conditions throughout the turn-on to turn-off commutation phase to reduce switching losses and increase efficiency. A soft-switched cell with a resonant inductor, capacitor, and additional IGBTs achieves zero-curre
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Chandra Kumar E, Et al. "Field Stop (FS) Type IGBT Transient Temperature Characteristics: E-Thermal Simulation Approach." International Journal on Recent and Innovation Trends in Computing and Communication 11, no. 4 (2023): 370–74. http://dx.doi.org/10.17762/ijritcc.v11i4.9842.

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This research presents an electro-thermal simulation method for analyzing the transient temperature characteristics of Field Stop (FS) type Insulated Gate Bipolar Transistors (IGBTs). The method combines IGBT working principles and semiconductor physical principles to investigate the influence of internal excess carrier lifetime on the IGBT's transient temperature behavior. By conducting actual tests on an FS type IGBT switching transient working process, the research establishes an electro-thermal simulation method with improved accuracy and simplified parameter calculation.
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Brungi, Pranathi, and Petru Andrei. "Computer Aided Optimization of Insulated Gate Bipolar Transistors." ECS Meeting Abstracts MA2024-02, no. 36 (2024): 2536. https://doi.org/10.1149/ma2024-02362536mtgabs.

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Compared to other types of transistors, insulating gate bipolar transistors (IGBTs) have high on-state current and breakdown voltage, which make them ideal for low-frequency (<20 kHz) power applications, such as switching devices for motor drive systems and uninterruptible power supplies. Although the on-state voltage (VON) of IGBTs is smaller than the on-state voltage of metal-oxide-semiconductor field-effect-transistors at high current densities, VON remains relatively high at low-current densities, reducing the range of applications of IGBTs in the low-current regime. In this presentatio
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Fahmi, M. I., M. F. Mukmin, H. F. Liew, C. L. Wai, M. A. Aazmi, and S. N. M. Arshad. "Design new voltage balancing control series connected for HV-IGBT`s." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 4 (2021): 2899. http://dx.doi.org/10.11591/ijece.v11i4.pp2899-2906.

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<span>The insulated gate bipolar transistors (IGBTs) are widely used in various applications as they require low gate drive power and gate voltage. This paper proposes an active gain circuit to maintain voltage stability of series-connected IGBTs for high voltage applications. The novel gate driver circuit with closed-loops control amplifies the gate signal while restricting the IGBT emitter voltage below a predetermined level. With the proposed circuit, serial-connected IGBTs can replace high-voltage IGBTs (HV-IGBTs) for high-voltage applications through the active control of the gate s
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M., I. Fahmi, F. Mukmin M., F. Liew H., L. Wai C., A. Aazmi M., and N. M. Arshad S. "Design new voltage balancing control series connected for HV-IGBT`s." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 4 (2021): 2899–906. https://doi.org/10.11591/ijece.v11i4.pp2899-2906.

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The insulated gate bipolar transistors (IGBTs) are widely used in various applications as they require low gate drive power and gate voltage. This paper proposes an active gain circuit to maintain voltage stability of seriesconnected IGBTs for high voltage applications. The novel gate driver circuit with closed-loops control amplifies the gate signal while restricting the IGBT emitter voltage below a predetermined level. With the proposed circuit, serial-connected IGBTs can replace high-voltage IGBTs (HV-IGBTs) for high-voltage applications through the active control of the gate signal time de
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Hatakeyama, Tetsuo, Kenji Fukuda, and Hajime Okumura. "An Investigation of Material Limit Characteristics of SiC IGBTs." Materials Science Forum 717-720 (May 2012): 1143–46. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1143.

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The impact of device concepts of Si insulated gate bipolar transistors (IGBTs) such as injection-enhanced IGBT (IEGT), high-conductivity IGBT (HiGT), and Si-limit IGBT on the performance of SiC IGBTs is examined. We first show that the forward characteristics of the original type of planer SiC IGBTs are much worse than those of SiC PiN diodes, even if the carrier lifetime is improved. Next, we show that the forward characteristics of SiC IEGTs and SiC HiGTs are comparable to those of SiC PiN diodes. Thus, device concepts of Si IGBTs are effective in improving the device performance of SiC IGBT
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Sena, Gianluca, Roberto Marani, and Anna Gina Perri. "POWER SEMICONDUCTORS DEVICES FOR INDUSTRIAL PWM INVERTERS: STATE OF ART." International Journal of Advances in Engineering & Technology 10, no. 1 (2017): 52–65. https://doi.org/10.5281/zenodo.3955545.

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<strong><em>In this paper the state of &nbsp;art of semiconductors devices for Industrial Pulse-Width Modulation (PWM) Inverters is presented. The last generations of Insulated Gate Bipolar Transistors (IGBTs), Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) Transistors are introduced and analysed. At last a comparison between Si-based IGBT and SiC MOSFET, obtained by SPICE simulations, is presented in order to identify the device which makes the PWM inverter more efficient.</em></strong>
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Brandis, Andrej, Denis Pelin, Tomislav Matić, and Danijel Topić. "Temperature Control Concept for Parallel IGBT Operation." Electronics 10, no. 4 (2021): 429. http://dx.doi.org/10.3390/electronics10040429.

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This paper addresses the concept of load balancing in the operation of parallel insulated-gate bipolar transistors (IGBTs), in which the temperature is used as the main control parameter. In parallel IGBT operation, it is essential to ensure an equal load distribution across all IGBTs. Two basic algorithm concepts for temperature control were developed for the purpose of balancing. A test model based on the parallel IGBTs operation was assembled in a laboratory and the developed algorithms were tested for the chosen parameters. MATLAB was used for final data processing. The comparison between
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Withanage, Ruchira, and Noel Shammas. "Series Connection of Insulated Gate Bipolar Transistors (IGBTs)." IEEE Transactions on Power Electronics 27, no. 4 (2012): 2204–12. http://dx.doi.org/10.1109/tpel.2011.2167000.

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Dissertations / Theses on the topic "Insulated gate bipolar transistors (IGBTs)"

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Withanage, Ruchira Renuka. "Series connection of insulated gate bipolar transistors (IGBTs)." Thesis, Staffordshire University, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.440357.

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Mitter, Chang Su. "Insulated gate bipolar transistor (IGBT) simulation using IG-Spice." Thesis, This resource online, 1991. http://scholar.lib.vt.edu/theses/available/etd-03022010-020115/.

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Hsieh, Pei-Shan. "IGBT design, modelling and novel devices." Thesis, University of Cambridge, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708993.

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Eio, Samson. "Current Injection Techniques to Optimise the Switching Transients of Power Diodes. Thyristors and Insulated Gate Bipolar Transistors (IGBTs)." Thesis, Staffordshire University, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.522131.

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Yang, Xin. "Controlled IGBT switching for power electronics building block." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708442.

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Fourie, Reinhart. "The development of a IGBT-based tap changer." Thesis, Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/4272.

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Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010.<br>ENGLISH ABSTRACT: Voltage regulation on distribution networks has so far been done by means of mechanical tap changers. However, these tap changers are plagued by high maintenance costs due to the arcing caused while switching, which degrades both the contacts and transformer oil. The major advances made during the last decade with regard to semiconductor technology have led to the development of high power IGBTs. These high power IGBTs are capable of conducting currents up to 1 000 A, while the
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Amimi, Adel. "Modèle électro-thermique unidimensionnel du transistor bipolaire à grille isolée (IGBT) pour la simulation de circuits de puissance." Rouen, 1997. http://www.theses.fr/1997ROUES033.

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Dans le domaine de l'électronique de puissance, où l'environnement et le mode de fonctionnement du composant jouent un rôle primordial, nous constatons que les aspects thermiques doivent être évalués de la même manière que les aspects strictement électriques. Cela suppose entre autres que la température interne des composants doit pouvoir évoluer comme toutes les grandeurs électriques. Dans ce contexte, nous avons développé un modèle analytique du transistor bipolaire à grille isolée (IGBT) prenant en compte les interactions électro-thermiques dans le composant, en associant au modèle électriq
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Wendt, Sven. "Turbogenerator mit Insulated Gate Bipolar Transistor (IGBT)-Umrichter zur dezentralen Energieversorgung." Dresden TUDpress, 2009. http://d-nb.info/998316393/04.

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Nicholls, Jonathan Christopher. "Soft-switching performance analysis of the clustered insulated gate bipolar transistor (CIGBT)." Thesis, De Montfort University, 2009. http://hdl.handle.net/2086/2396.

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The use of Insulated Gate Bipolar Transistors (IGBT) have enabled better switching performance than the Metal Oxide Semiconductor Field effect Transistor (MOSFET) in medium to high power applications due to their lower on-state power loss and higher current densities. The power ratings of IGBTs are slowly increasing and are envisaged to replace thyristors in medium power applications such as High Voltage Direct Current (HVDC) inverter systems and traction drive controls. Devices such as the MOS Controlled Thyristor (MCT) and Emitter Switched Thyristor (EST) were developed in an effort to furth
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Buschendorf, Martin [Verfasser]. "Untersuchungen zur Reihenschaltung von 4,5-kV-Insulated Gate Bipolar Transistor (IGBT) Modulen / Martin Buschendorf." München : Verlag Dr. Hut, 2020. http://d-nb.info/121947116X/34.

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Books on the topic "Insulated gate bipolar transistors (IGBTs)"

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Khanna, V. K. Insulated gate bipolar transistors (IGBT): Theory and design. IEEE Press, 2003.

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Khanna, V. K. Insulated gate bipolar transistors, IGBT: Theory and design. John Wiley, 2002.

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Ciappa, Mauro. Some reliability aspects of IGBT modules for high-power applications. Hartung-Gorre, 2001.

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Yun, Chan-Su. Static and dynamic thermal behavior of IGBT power modules. Hartung-Gorre, 2001.

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Katzer, Uwe. Schaltungsentwicklung, Simulation und Entwurf von Ansteuer- und Überwachungs-IC's für eine IGBT-Halbbrücke. VDI Verlag, 1999.

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Hefner, A. R. INSTANT--IGBT network simulation and transient ANalysis tool. U.S. Dept. of Commerce, Technology Administration, National Institute of Standards and Technology, 1992.

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Hefner, A. R. INSTANT-IGBT network simulation and transient ANalysis tool. U.S. Dept. of Commerce, National Institute of Standards and Technology, 1992.

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Khanna, Vinod Kumar. Insulated Gate Bipolar Transistor IGBT Theory and Design. John Wiley & Sons, Inc., 2003. http://dx.doi.org/10.1002/047172291x.

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Wikström, Mats Olaf Tobias. MOS-controlled switches for high-voltage application. Hartung-Gorre, 2001.

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Linder, Stefan. Power semiconductors. EPFL Press, 2006.

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Book chapters on the topic "Insulated gate bipolar transistors (IGBTs)"

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Singh, Ranbir, and B. Jayant Baliga. "Insulated Gate Bipolar Transistors." In Cryogenic Operation of Silicon Power Devices. Springer US, 1998. http://dx.doi.org/10.1007/978-1-4615-5751-7_7.

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Baliga, B. Jayant. "Insulated Gate Bipolar Transistors." In Fundamentals of Power Semiconductor Devices. Springer International Publishing, 2018. http://dx.doi.org/10.1007/978-3-319-93988-9_9.

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Baliga, B. Jayant. "Silicon IGBT (Insulated Gate Bipolar Transistor)." In Advanced High Voltage Power Device Concepts. Springer New York, 2011. http://dx.doi.org/10.1007/978-1-4614-0269-5_5.

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Zhu, Lin, S. Balachandran, and T. P. Chow. "Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)." In Materials Science Forum. Trans Tech Publications Ltd., 2005. http://dx.doi.org/10.4028/0-87849-963-6.917.

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Balachandran, S., T. P. Chow, and Anant Agarwal. "Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors." In Silicon Carbide and Related Materials 2005. Trans Tech Publications Ltd., 2006. http://dx.doi.org/10.4028/0-87849-425-1.1433.

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Patil, Nishad, Diganta Das, and Michael Pecht. "Mahalanobis Distance Approach for Insulated Gate Bipolar Transistors Diagnostics." In Advanced Concurrent Engineering. Springer London, 2010. http://dx.doi.org/10.1007/978-0-85729-024-3_60.

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Gao, Jie, Jingbin Shangguan, Yuzhen Huang, Huajian Zhang, Yuqiang Zhang, and Daqing Gao. "High Current Pulse Forming Network Switched by Insulated Gate Bipolar Transistors." In Lecture Notes in Electrical Engineering. Springer Nature Singapore, 2025. https://doi.org/10.1007/978-981-96-1852-1_37.

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Javier Villalobos-Pina, Francisco, Josué A. Reyes-Malanche, Eduardo Cabal-Yepez, and Efrain Ramirez-Velasco. "Open Circuit Fault Diagnosis in Induction Motor Driver Inverter." In Induction Motors - Latest Research and Applications [Working Title]. IntechOpen, 2024. http://dx.doi.org/10.5772/intechopen.1006637.

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The induction machines are the power horses in the industry due to the practically null maintenance, this kind of machines are use in a widely group of industrial applications, and with the advance of power electronics these machines replace another kind, like direct current (dc) motors attributable to the evolution of control algorithms and the digital platforms. In this context, a methodology is proposed to detect and isolate faults, focusing on the inverter stage of Induction Machine motor drives, with a specific emphasis on Insulated Gate Bipolar Transistor (IGBT) faults, using phasor anal
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Gieras, Jacek F. "Inverter Drives." In Linear Induction Drives. Oxford University PressOxford, 1994. http://dx.doi.org/10.1093/oso/9780198593812.003.0007.

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Abstract The full capability of LIMs has only been recognized through recent revolutionary advances in power semiconductor technology. For example, the progress in power electronics over the last ten years has led to the replacement of the bipolar transistor with the power metal-oxide-semiconductor field effect transistor (MOSFET) and the insulated gate bipolar transistor_ (IGBT). Similar advances in the 1990s are expected to lead to the replacement of the gate-turn-off (GTO) thyristor by MOS-gated thyristor structures. On a longer time scale, silicon-carbide-based power devices have the poten
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"Insulated Gate Bipolar Transistors." In Modern Silicon Carbide Power Devices. WORLD SCIENTIFIC, 2023. http://dx.doi.org/10.1142/9789811284281_0017.

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Conference papers on the topic "Insulated gate bipolar transistors (IGBTs)"

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Kim, Eunho, Kwang Hoon Oh, and Yong Sang Kim. "Review of Various Failure Modes in High-Voltage Insulated Gate Bipolar Transistors During Short Circuit Operation." In 2024 10th International Conference on Condition Monitoring and Diagnosis (CMD). IEEE, 2024. https://doi.org/10.23919/cmd62064.2024.10766151.

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Vinciguerra, Vincenzo, Filippo Sabatini, Mohamed Boutaleb, et al. "Finite Element Analysis of the Asymmetric Warpage Induced by the Oxidation Process in Trench Insulated Gate Bipolar Transistor (Trench IGBT) 12” Si Patterned Wafers." In 2025 26th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE, 2025. https://doi.org/10.1109/eurosime65125.2025.11006629.

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Ohashi, H., A. Nakagawa, and M. Hideshima. "High Power Insulated Gate Bipolar Transistors (IGBTs)." In 1988 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1988. http://dx.doi.org/10.7567/ssdm.1988.a-2-1.

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Withanage, R., N. Shammas, and S. Tennakoon. "Series connection of insulated gate bipolar transistors (IGBTs)." In 2005 IEEE 11th European Conference on Power Electronics and Applications. IEEE, 2005. http://dx.doi.org/10.1109/epe.2005.219212.

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Patil, N., D. Das, K. Goebel, and M. Pecht. "Failure precursors for insulated gate bipolar transistors (IGBTs)." In 9th International Seminar on Power Semiconductors (ISPS 2008). IEE, 2008. http://dx.doi.org/10.1049/ic:20080222.

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Gelman, Vitaly. "Why There Is No IGBT Traction Rectifiers?" In 2014 Joint Rail Conference. American Society of Mechanical Engineers, 2014. http://dx.doi.org/10.1115/jrc2014-3802.

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The Insulated Gate Bipolar Transistors (IGBT) are widely used in high power converters. Definite advantages of IGBT rectifiers (also called PWM rectifiers) are: zero reactive power, low harmonics, and inherent power recuperation capability. However stationary traction rectifiers are built with either thyristors or diodes, not with IGBTs. The paper compares IGBT and thyristor rectifiers and analyzes the factors precluding the use of IGBT rectifiers at traction power substations.
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Patil, Nishad, Diganta Das, Kai Goebel, and Michael Pecht. "Identification of failure precursor parameters for Insulated Gate Bipolar Transistors (IGBTs)." In 2008 International Conference on Prognostics and Health Management (PHM). IEEE, 2008. http://dx.doi.org/10.1109/phm.2008.4711417.

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Tsutsui, K., K. Kakushima, T. Hoshii, et al. "3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat)." In 2017 IEEE 12th International Conference on ASIC (ASICON). IEEE, 2017. http://dx.doi.org/10.1109/asicon.2017.8252681.

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Stamer, Fabian, Andreas Liske, and Marc Hiller. "New Gate Driver for online adjustable switching behavior of Insulated Gate Bipolar Transistors (IGBTs)." In 2019 21st European Conference on Power Electronics and Applications (EPE '19 ECCE Europe). IEEE, 2019. http://dx.doi.org/10.23919/epe.2019.8915494.

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Patil, Nishad, Sandeep Menon, Diganta Das, and Michael Pecht. "Evaluation of Robust Covariance Estimation Techniques for Anomaly Detection of Insulated Gate Bipolar Transistors (IGBT)." In ASME 2010 Conference on Smart Materials, Adaptive Structures and Intelligent Systems. ASMEDC, 2010. http://dx.doi.org/10.1115/smasis2010-3861.

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An approach to detect anomalies in IGBTs is to monitor the collector-emitter current and voltage in application. These current and voltage parameters can then be reduced to a univariate distance measure called the Mahalanobis Distance (MD). The MD values with the use of an appropriate threshold enable anomaly detection of these devices. Mahalanobis distances (MD) are weighted Euclidean distances; the distance of each point from the center of the distribution is weighted by the inverse of the sample variance-covariance matrix. The presence of outliers in the monitored data can lead to the overe
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Reports on the topic "Insulated gate bipolar transistors (IGBTs)"

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Ovrebo, Gregory K. Thermal Simulation of Switching Pulses in an Insulated Gate Bipolar Transistor (IGBT) Power Module. Defense Technical Information Center, 2015. http://dx.doi.org/10.21236/ada616757.

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Ovrebo, Gregory K. Simulation of Heating of an Oil-Cooled Insulated Gate Bipolar Transistors Converter Model. Defense Technical Information Center, 2004. http://dx.doi.org/10.21236/ada428067.

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