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Journal articles on the topic 'Insulated gate bipolar transistors (IGBTs)'

Author: Grafiati

Published: 5 June 2025

Last updated: 2 August 2025

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1

Inampudi, Prasannakumar, P. Chandrasekar, and T. Vijay Muni. "Evaluating a novel bidirectional soft-switching DC-DC converter for electric vehicles." International Journal of Applied Power Engineering (IJAPE) 13, no. 4 (2024): 825. http://dx.doi.org/10.11591/ijape.v13.i4.pp825-834.

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This research aims to build unique zero voltage transition (ZVT) non-isolated bidirectional DC-DC converters for hybrid electric vehicle battery storage. First, a high-voltage gain bidirectional converter (BDC) is examined. This converter can soft-switch insulated gate bipolar transistors (IGBTs). The primary insulated-gate bipolar transistors (IGBTs) are operated under zero-current conditions throughout the turn-on to turn-off commutation phase to reduce switching losses and increase efficiency. A soft-switched cell with a resonant inductor, capacitor, and additional IGBTs achieves zero-curre

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Inampudi, Prasannakumar, P. Chandrasekar, and T. Vijay Muni. "Evaluating a novel bidirectional soft-switching DC-DC converter for electric vehicles." International Journal of Applied Power Engineering 13, no. 4 (2025): 825–34. https://doi.org/10.11591/ijape.v13.i4.pp825-834.

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This research aims to build unique zero voltage transition (ZVT) non-isolated bidirectional DC-DC converters for hybrid electric vehicle battery storage. First, a high-voltage gain bidirectional converter (BDC) is examined. This converter can soft-switch insulated gate bipolar transistors (IGBTs). The primary insulated-gate bipolar transistors (IGBTs) are operated under zero-current conditions throughout the turn-on to turn-off commutation phase to reduce switching losses and increase efficiency. A soft-switched cell with a resonant inductor, capacitor, and additional IGBTs achieves zero-curre

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3

Chandra Kumar E, Et al. "Field Stop (FS) Type IGBT Transient Temperature Characteristics: E-Thermal Simulation Approach." International Journal on Recent and Innovation Trends in Computing and Communication 11, no. 4 (2023): 370–74. http://dx.doi.org/10.17762/ijritcc.v11i4.9842.

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This research presents an electro-thermal simulation method for analyzing the transient temperature characteristics of Field Stop (FS) type Insulated Gate Bipolar Transistors (IGBTs). The method combines IGBT working principles and semiconductor physical principles to investigate the influence of internal excess carrier lifetime on the IGBT's transient temperature behavior. By conducting actual tests on an FS type IGBT switching transient working process, the research establishes an electro-thermal simulation method with improved accuracy and simplified parameter calculation.

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4

Brungi, Pranathi, and Petru Andrei. "Computer Aided Optimization of Insulated Gate Bipolar Transistors." ECS Meeting Abstracts MA2024-02, no. 36 (2024): 2536. https://doi.org/10.1149/ma2024-02362536mtgabs.

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Compared to other types of transistors, insulating gate bipolar transistors (IGBTs) have high on-state current and breakdown voltage, which make them ideal for low-frequency (<20 kHz) power applications, such as switching devices for motor drive systems and uninterruptible power supplies. Although the on-state voltage (VON) of IGBTs is smaller than the on-state voltage of metal-oxide-semiconductor field-effect-transistors at high current densities, VON remains relatively high at low-current densities, reducing the range of applications of IGBTs in the low-current regime. In this presentatio

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5

Fahmi, M. I., M. F. Mukmin, H. F. Liew, C. L. Wai, M. A. Aazmi, and S. N. M. Arshad. "Design new voltage balancing control series connected for HV-IGBT`s." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 4 (2021): 2899. http://dx.doi.org/10.11591/ijece.v11i4.pp2899-2906.

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<span>The insulated gate bipolar transistors (IGBTs) are widely used in various applications as they require low gate drive power and gate voltage. This paper proposes an active gain circuit to maintain voltage stability of series-connected IGBTs for high voltage applications. The novel gate driver circuit with closed-loops control amplifies the gate signal while restricting the IGBT emitter voltage below a predetermined level. With the proposed circuit, serial-connected IGBTs can replace high-voltage IGBTs (HV-IGBTs) for high-voltage applications through the active control of the gate s

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M., I. Fahmi, F. Mukmin M., F. Liew H., L. Wai C., A. Aazmi M., and N. M. Arshad S. "Design new voltage balancing control series connected for HV-IGBT`s." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 4 (2021): 2899–906. https://doi.org/10.11591/ijece.v11i4.pp2899-2906.

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The insulated gate bipolar transistors (IGBTs) are widely used in various applications as they require low gate drive power and gate voltage. This paper proposes an active gain circuit to maintain voltage stability of seriesconnected IGBTs for high voltage applications. The novel gate driver circuit with closed-loops control amplifies the gate signal while restricting the IGBT emitter voltage below a predetermined level. With the proposed circuit, serial-connected IGBTs can replace high-voltage IGBTs (HV-IGBTs) for high-voltage applications through the active control of the gate signal time de

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7

Hatakeyama, Tetsuo, Kenji Fukuda, and Hajime Okumura. "An Investigation of Material Limit Characteristics of SiC IGBTs." Materials Science Forum 717-720 (May 2012): 1143–46. http://dx.doi.org/10.4028/www.scientific.net/msf.717-720.1143.

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The impact of device concepts of Si insulated gate bipolar transistors (IGBTs) such as injection-enhanced IGBT (IEGT), high-conductivity IGBT (HiGT), and Si-limit IGBT on the performance of SiC IGBTs is examined. We first show that the forward characteristics of the original type of planer SiC IGBTs are much worse than those of SiC PiN diodes, even if the carrier lifetime is improved. Next, we show that the forward characteristics of SiC IEGTs and SiC HiGTs are comparable to those of SiC PiN diodes. Thus, device concepts of Si IGBTs are effective in improving the device performance of SiC IGBT

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8

Sena, Gianluca, Roberto Marani, and Anna Gina Perri. "POWER SEMICONDUCTORS DEVICES FOR INDUSTRIAL PWM INVERTERS: STATE OF ART." International Journal of Advances in Engineering & Technology 10, no. 1 (2017): 52–65. https://doi.org/10.5281/zenodo.3955545.

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<strong><em>In this paper the state of  art of semiconductors devices for Industrial Pulse-Width Modulation (PWM) Inverters is presented. The last generations of Insulated Gate Bipolar Transistors (IGBTs), Silicon Carbide (SiC) MOSFETs and Gallium Nitride (GaN) Transistors are introduced and analysed. At last a comparison between Si-based IGBT and SiC MOSFET, obtained by SPICE simulations, is presented in order to identify the device which makes the PWM inverter more efficient.</em></strong>

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9

Brandis, Andrej, Denis Pelin, Tomislav Matić, and Danijel Topić. "Temperature Control Concept for Parallel IGBT Operation." Electronics 10, no. 4 (2021): 429. http://dx.doi.org/10.3390/electronics10040429.

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This paper addresses the concept of load balancing in the operation of parallel insulated-gate bipolar transistors (IGBTs), in which the temperature is used as the main control parameter. In parallel IGBT operation, it is essential to ensure an equal load distribution across all IGBTs. Two basic algorithm concepts for temperature control were developed for the purpose of balancing. A test model based on the parallel IGBTs operation was assembled in a laboratory and the developed algorithms were tested for the chosen parameters. MATLAB was used for final data processing. The comparison between

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10

Withanage, Ruchira, and Noel Shammas. "Series Connection of Insulated Gate Bipolar Transistors (IGBTs)." IEEE Transactions on Power Electronics 27, no. 4 (2012): 2204–12. http://dx.doi.org/10.1109/tpel.2011.2167000.

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Bleizgys, Vytautas, and Andrius Platakis. "INVESTIGATION OF IMPACT OF THE GATE CIRCUITRY ON IGBT TRANSISTOR DYNAMIC PARAMETERS." Mokslas - Lietuvos ateitis 2, no. 1 (2010): 59–62. http://dx.doi.org/10.3846/mla.2010.013.

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The impact of Insulated Gate Bipolar Transistor driver circuit parameters on the rise and fall time of the collector current and voltage collector-emitter was investigated. The influence of transistor driver circuit parameters on heating of Insulated Gate Bipolar Transistors was investigated as well.

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12

Balachandran, S., T. Paul Chow, and Anant K. Agarwal. "Performance Assessment of 4H-SiC Bipolar Junction Transistors and Insulated Gate Bipolar Transistors." Materials Science Forum 527-529 (October 2006): 1433–36. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.1433.

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The performance prospects for 4H-SiC Bipolar Junction Transistors (BJTs) and Insulated Gate Bipolar Transistors (IGBTs) are theoretically evaluated. The total power dissipated (Ptotal) for both devices is calculated as a function of lifetime in the drift region and blocking voltage and used as a figure of merit to compare and contrast the effectiveness of different semiconductor materials for bipolar device applications. Assuming a maximum of 300W/cm2 for the total permissible power dissipation due to heat sink constraints we estimate an upper limit of 5kV for SiC BJT operation.

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Chowdhury, Sauvik, Collin W. Hitchcock, Rajendra Dahal, Ishwara B. Bhat, and T. Paul Chow. "4H-SiC n-Channel DMOS IGBTs on (0001) and (000-1) Oriented Lightly Doped Free-Standing Substrates." Materials Science Forum 858 (May 2016): 954–57. http://dx.doi.org/10.4028/www.scientific.net/msf.858.954.

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We experimentally demonstrate 4H-SiC n-channel, DMOS Insulated Gate Bipolar Transistors (IGBTs) on 180 µm thick lightly doped free-standing n- substrates with an ion-implanted collector region, and metal-oxide-semiconductor (MOS) gate on (0001) and (000-1) surfaces. The IGBTs show an on-state current of 20A/cm2 at a power dissipation of 300W/cm2. Threshold voltage of 7.5V and 10.5V was obtained on Si-face and C-face respectively. Both IGBTs show a small positive temperature coefficient of the forward voltage drop, which is useful for easy parallelization of devices.

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14

Ryu, Sehwan, Myungsoo Lee, Mohsen A. Hajji, Hyungkeun Ahn, Deukyoung Han, and Mahmoud El Nokali. "A transient model for insulated gate bipolar transistors (IGBTs)." International Journal of Electronics 95, no. 4 (2008): 399–409. http://dx.doi.org/10.1080/00207210801996162.

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15

Khvitia, Badri, Anna Gheonjian, Zviadi Kutchadze, and Roman Jobava. "A SPICE Model for IGBTs and Power MOSFETs Focusing on EMI/EMC in High-Voltage Systems." Electronics 10, no. 22 (2021): 2822. http://dx.doi.org/10.3390/electronics10222822.

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We describe two models of Power Transistors (IGBT, MOSFET); both were successfully used for the analysis of electromagnetic interference (EMI) and electromagnetic compatibility (EMC) while modeling high-voltage systems (PFC, DC/DC, inverter, etc.). The first semi-mathematical–behavioral insulated-gate bipolar transistor (IGBT) model introduces nonlinear negative feedback generated in the semiconductor’s p+ and n+ layers, which are located near the metal contact of the IGBT emitter, to better describe the dynamic characteristics of the transistor. A simplified model of the metal–oxide-semicondu

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16

Dimitrov, Borislav, Khaled Hayatleh, Steve Barker, and Gordana Collier. "Design, Analysis and Experimental Verification of the Self-Resonant Inverter for Induction Heating Crucible Melting Furnace Based on IGBTs Connected in Parallel." Electricity 2, no. 4 (2021): 439–58. http://dx.doi.org/10.3390/electricity2040026.

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The object of this research was a self-resonated inverter, based on paralleled Insulated-Gate Bipolar Transistors (IGBTs), for high-frequency induction heating equipment, operating in a wide range of output powers, applicable for research and industrial purposes. For the nominal installed capacity for these types of invertors to be improved, the presented inverter with a modified circuit comprising IGBT transistors connected in parallel was explored. The suggested topology required several engineering problems to be solved: minimisation of the current mismatch amongst the paralleled transistor

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17

Zhu, Lin, S. Balachandran, and T. Paul Chow. "Comparison of High-Voltage 4H-SiC Insulated-Gate Bipolar Transistor (IGBT) and MOS-Gated Bipolar Transistor (MGT)." Materials Science Forum 483-485 (May 2005): 917–20. http://dx.doi.org/10.4028/www.scientific.net/msf.483-485.917.

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In this paper, the performance of high-voltage (10kV) 4H-SiC n- and p-channel IGBTs and n-channel MOS-Gated Bipolar Transistor (MGT) are investigated and compared using 2- dimensional numerical simulations. We have found that the MGT in SiC is not suitable for applications at high blocking voltages and the p-channel IGBT is a better choice because of a much higher conductivity modulation in the drift region.

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Zhang, Xiao, Xun Liu, Yifan Song, et al. "Digital-Twin-Driven Intelligent Insulated-Gate Bipolar Transistor Production Lines." Sensors 24, no. 2 (2024): 612. http://dx.doi.org/10.3390/s24020612.

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With the rapid development of novel energy vehicles, power generation, photovoltaics, and other industries, power electronic devices have gained considerable attention. Insulated-gate bipolar transistors (IGBTs) have been widely used in those fields. With the emergence of intelligent manufacturing concepts such as Germany’s “Industry 4.0” and China’s “Made in China 2025”, conventional manufacturing which needs to be upgraded with higher efficiency and yield is rapidly pivoting toward digitalization and intelligence. The digital twin methodology has been extensively used in various industries f

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19

Kang, Kuan-Min, Jia-Wei Hu, and Chih-Fang Huang. "Simulation Study on 6.5 kV SiC Trench Gate p-Channel Superjunction Insulated Gate Bipolar Transistor." Micromachines 16, no. 7 (2025): 758. https://doi.org/10.3390/mi16070758.

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This paper investigates 6.5 kV SiC trench gate p-channel IGBTs using Sentaurus TCAD simulations. The proposed superjunction structure is compared to conventional designs to highlight its advantages. The p-IGBT, fabricated on an n-type substrate, offers notable commercial advantages over n-IGBTs on p-type substrates. The n-shield can effectively protect the trench gate oxide in the corners of SiC. The n-shield and n-pillar can be either floating or grounded, with the floating shield condition significantly enhancing injection and improving forward conduction performance. The superjunction float

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20

Mohsenzade, Sadegh, Javad Naghibi, and Kamyar Mehran. "Reliability Enhancement of Power IGBTs under Short-Circuit Fault Condition Using Short-Circuit Current Limiting-Based Technique." Energies 14, no. 21 (2021): 7397. http://dx.doi.org/10.3390/en14217397.

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Like the widely-used semiconductor switch, Insulated Gate Bipolar Transistors (IGBTs) are subject to many failures and degradation in power electronic converters. In Short Circuit Fault (SCF), as the most reported failures in IGBTs, drastic, sudden temperature rise, and peak SCF current are widespread failures owing to a relatively long delay of the protection subsystem. This paper proposes a protection strategy to limit the junction temperature rise by limiting the SCF current by adding a small value resistor in the IGBT emitter. Second, it reduces the SCF current to a value much less than th

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Park, Dong Gyu, Hyunwoo Kim, and Jang Hyun Kim. "Improvement Breakdown Voltage by a Using Crown-Shaped Gate." Electronics 12, no. 3 (2023): 474. http://dx.doi.org/10.3390/electronics12030474.

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In this paper, a crown-shaped trench gate formed by a sidewall spacer in insulated gate bipolar transistors (IGBT) is proposed to improve breakdown voltage. When a sidewall spacer is added to trench bottom corners, the electric field is distributed to the surface of the sidewall spacer and decreased to 48% peak value of the electric field. Thus, the sidewall spacer IGBT improved to 5% breakdown voltage. Another study proposed an additional oxide layer for trench bottom corners and improved breakdown voltage similar to the proposed IGBT. Previous studies have shown degradation in other electric

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Zhang, Zhuo, Qin Ruo Wang, and Cheng Zhang. "Study on Losses Calculation and Design of DC Boost Chopper." Applied Mechanics and Materials 727-728 (January 2015): 546–52. http://dx.doi.org/10.4028/www.scientific.net/amm.727-728.546.

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In view of the cooling of Insulated-gate bipolar transistors (IGBTs) in the parallel DC boost chopper, this paper presents a method to calculate the power loss of IGBTs. It involves functions of equivalent heat circuit of liquid cooling system based on the similarity theory, and the design of the parameters in the cooling system for DC boost chopper. It solves the problems of parameters designing of liquid-cooled heat sink. Taking the cooling system of IGBTs as an example, the experiment shows that the cooling system based on this method has excellent performances in the worksite, and the meth

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23

Fang, J., J. H. Hao, Q. Zhao, J. Q. Fan, and Z. W. Dong. "Simulation study on total ionizing dose effect of IGBT gamma irradiation." Journal of Instrumentation 18, no. 09 (2023): P09030. http://dx.doi.org/10.1088/1748-0221/18/09/p09030.

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Abstract The insulated gate bipolar transistor (IGBT) has emerged as a prominent high-power semiconductor device due to its excellent overall performance. It is widely utilized in various fields, including aerospace. Due to prolonged operation in complex irradiation environments, the performance of IGBTs is susceptible to degradation and damage. Therefore, conducting research on the variation of IGBT characteristics under irradiation environments is crucial to ensuring their long-term functionality in extended space missions. To evaluate and analyze the total ionizing dose (TID) effect of IGBT

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24

Pietruszka, Adrian, Paweł Górecki, Sebastian Wroński, Balázs Illés, and Agata Skwarek. "The Influence of Soldering Profile on the Thermal Parameters of Insulated Gate Bipolar Transistors (IGBTs)." Applied Sciences 11, no. 12 (2021): 5583. http://dx.doi.org/10.3390/app11125583.

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The effect of solder joint fabrication on the thermal properties of IGBTs soldered onto glass-epoxy substrate (FR4) was investigated. Glass-epoxy substrates with a thickness of 1.50 mm, covered with a 35 μm thick Cu layer, were used. A surface finish was prepared from a hot air leveling (HAL) Sn99Cu0.7Ag0.3 layer with a thickness of 1 ÷ 40 μm. IGBT transistors NGB8207BN were soldered with SACX0307 (Sn99Ag0.3Cu0.7) paste. The samples were soldered in different soldering ovens and at different temperature profiles. The thermal impedance Zth(t) and thermal resistance Rth of the samples were measu

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25

Grace, Imelda. "A novel current-source-based active gate driver for high power IGBT modules with enhanced switching controllability." i-manager's Journal on Power Systems Engineering 12, no. 3 (2025): 20. https://doi.org/10.26634/jps.12.3.21824.

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High power insulated gate bipolar transistors (IGBTs) are integral to modern power conversion systems across railway traction, renewable energy, and HVDC transmission. Traditional gate drivers offer limited adaptability under dynamic conditions, leading to increased switching losses and reduced reliability. This paper proposes a novel current source based active gate driver (CS-AGD) tailored for high-power IGBT modules, enabling dynamic control of transient switching characteristics. We design and prototype a CS-AGD circuit, integrate it within a wide-range double-pulse test platform, and expe

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He, Shilie, Meiling Yu, Yiqiang Chen, et al. "Prediction of IGBT Gate Oxide Layer’s Performance Degradation Based on MultiScaleFormer Network." Micromachines 15, no. 8 (2024): 985. http://dx.doi.org/10.3390/mi15080985.

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Insulated gate bipolar transistors (IGBTs) are widely used in power electronic devices, and their health prediction problems have attracted much attention in the field of power electronic equipment health management. The performance degradation of IGBT gate oxide is one of the most important failure modes. In order to analyze this failure mechanism and the ease of implementation of a monitoring circuit, the gate leakage current of IGBTs was selected as the fault precursor parameter for the degradation of their gate oxide performance, and feature selection and fusion were carried out by using t

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27

Seock Lee, Hae, Geon Hee Lee, Byoung Sup Ahn, and Ey Goo Kang. "A Study on the Electric Characteristics of the Trench Gate Field Stop Insulated Gate Bipolar Transistor Through Two-Step Field Stop." Journal of Nanoelectronics and Optoelectronics 16, no. 5 (2021): 762–65. http://dx.doi.org/10.1166/jno.2021.3005.

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Insulated gate bipolar transistor (IGBT) element is an electrically conductive device with Bipolar junction transistor (BJT) output and Metal Oxide Silicon Field Effect Transistor (MOSFET) input. The IGBTs is a power semiconductor device that aims for high breakdown voltage, low on-state voltage, fast switching and reliability. This paper is, the experiment was conducted with a two-step field stop, IGBT instead of a traditional one step field stop. In order to minimize the energy loss caused by the trade-off relationship between breakdown voltage and the on-state voltage drop, the experiment w

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28

Jagtap, Atharva D. "Design High Efficiency Bidirectional Buck Boost Converter Using PIC16F877A." INTERNATIONAL JOURNAL OF SCIENTIFIC RESEARCH IN ENGINEERING AND MANAGEMENT 09, no. 04 (2025): 1–9. https://doi.org/10.55041/ijsrem44995.

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This paper presents the design and development of a high-efficiency bi-directional buck-boost converter utilizing Insulated Gate Bipolar Transistors (IGBTs) for applications requiring seamless energy transfer between sources and loads. The proposed topology optimizes efficiency through advanced switching techniques and precise control algorithms, minimizing losses and improving performance in both buck and boost modes. A comprehensive analysis of the converter’s design, including circuit topology, modulation strategies, and thermal management, is provided. Simulation and experimental results v

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29

Haugen, K. L., K. Papastergiou, P. Asimakopoulos, and D. Peftitsis. "High precision scalable power converter for accelerator magnets." Journal of Instrumentation 17, no. 03 (2022): C03021. http://dx.doi.org/10.1088/1748-0221/17/03/c03021.

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Abstract The lower conduction power losses and the positive temperature coefficient that favours parallel connections, make Silicon Carbide (SiC) Metal Oxide Semiconductor Field-Effect Transistors (MOSFETs) to be an excellent replacement of existing Silicon Insulated Gate Bipolar Transistors (IGBTs) technology. These characteristics combined with high switching frequency operation, enables the design of high-accuracy DC-DC converters with minimised filtering requirements. This paper investigates the design for a converter with high-accuracy current (0.9 ppm) supplying a 0.05 H electromagnetic

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Górecki, Krzysztof, Janusz Zarębski, and Paweł Górecki. "Influence of Thermal Phenomena on the Characteristics of Selected Electronics Networks." Energies 14, no. 16 (2021): 4750. http://dx.doi.org/10.3390/en14164750.

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This paper presents the results of investigations on the influence of thermal phenomena—self-heating in semiconductor devices and mutual thermal couplings between them—on the characteristics of selected electronics networks containing bipolar transistors (BJTs) or insulated gate bipolar transistors (IGBTs). Using the authors’ compact electrothermal models of the transistors mentioned above, the non-isothermal DC and dynamic characteristics of these devices and selected networks with these devices are calculated. Their selected characteristics are compared with the measurement results. The wave

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Sun, Haifeng, and Xiaopeng Liu. "Cascaded H-bridge Type Power Electronic Transformer Electromagnetic Interference Study Based on Parallel Simulation." Journal of Physics: Conference Series 2592, no. 1 (2023): 012074. http://dx.doi.org/10.1088/1742-6596/2592/1/012074.

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Abstract Power electronic converter (Power Electronic Transformer, PET) is widely used in power systems, so the research on PET electromagnetic disturbance (Electro Magnetic Interference, EMI) cannot be ignored. PET consists of many insulated gate bipolar transistors (Insulate-Gate Bipolar Transistor, IGBT). A large number of converter levels will cause problems such as small simulation steps and long simulation times. To solve the above problems, firstly, the IGBT and its anti-parallel diodes are modeled by an 8-node model to reduce the complexity of the system; secondly, after dividing the m

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Górecki, Paweł, and Krzysztof Górecki. "Modelling a Switching Process of IGBTs with Influence of Temperature Taken into Account." Energies 12, no. 10 (2019): 1894. http://dx.doi.org/10.3390/en12101894.

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In this article the problem of modelling a switching process of Insulated Gate Bipolar Transistors (IGBTs) in the SPICE software is considered. The new form of the considered transistor model is presented. The model includes controlled voltage and current sources, resistors and voltage sources. In the model, influence of temperature on dc and dynamic characteristics of the IGBT is taken into account. A detailed description of the dynamic part of this model is included in the article and some results of experimental verification are shown. Verification is performed for a transistor IRG4PC40UD b

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Khair, Roos Muhammad, Kasri Nur Faizal, and Nor Asiah Muhamad. "HVDC Switching Using Microprocessor for Polarization and Depolarization Measurement." Applied Mechanics and Materials 284-287 (January 2013): 1131–35. http://dx.doi.org/10.4028/www.scientific.net/amm.284-287.1131.

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Polarization and Depolarization Current (PDC) testing is a non-destructive dielectric testing method to determine the conductivity and moisture content of the insulator. This paper presents the application of microprocessor in HVDC (High Voltage Direct Current) switch to switch “ON” and “OFF” the PDC measurement circuit. This paper also reviewed the involvement and also the function of microprocessor to control the switching circuit and also the function of auxiliary circuit in controlling the voltage balancing of each device in the IGBT (Insulated Gate Bipolar Transistor) circuit. A simple an

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Xiao, Yue, and Fanrong Wang. "Performer-KAN-Based Failure Prediction for IGBT with BO-CEEMDAN." Micromachines 16, no. 6 (2025): 689. https://doi.org/10.3390/mi16060689.

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Insulated Gate Bipolar Transistors (IGBTs) are widely deployed in power electronic systems due to their superior performance. However, at the same time, they are one of the most critical and fragile components in electronic systems. The failure prediction of IGBTs can precisely forecast the potential risk to guarantee system reliability. In this paper, Bayesian-optimized CEEMDAN is adopted to extract fault features efficiently, and a prognostic model named Performer-KAN is proposed for IGBT failure prediction. The proposed model combines the efficient FAVOR+ mechanism from the Performer with t

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Melnyk, Kyrylo, Lu Yang Zhang, Peter Michael Gammon, Arne Benjamin Renz, and Marina Antoniou. "Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs." Solid State Phenomena 358 (August 21, 2024): 97–102. http://dx.doi.org/10.4028/p-zb9gva.

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Silicon carbide (SiC) metal-oxide-semiconductor field-effect transistors (MOSFETs) are successfully replacing traditional silicon insulated gate bipolar transistors (Si IGBTs) in power applications. Nonetheless, two crucial challenges persist: gate-oxide reliability and a reduced short circuit (SC) withstand time. This paper explores a novel MOSFET structure, which is designed to address these concerns and compares it with existing designs through extensive 3D TCAD simulations. The proposed MOSFET structure features a p-region under the gate, providing a unique configuration for improved perfo

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Sena, Gianluca, Roberto Marani, Gennaro Gelao, and Anna Gina Perri. "A Comparative Study of Power Semiconductor Devices for Industrial PWM Inverters." International Journal of Power Electronics and Drive Systems (IJPEDS) 7, no. 4 (2016): 1420. http://dx.doi.org/10.11591/ijpeds.v7.i4.pp1420-1428.

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The growing demand of energy translates into efficiency requirements of energy conversion systems and electric drives. Both these systems are based on Pulse Width Modulation (PWM) Inverter. In this paper we firstly present the state of art of the main types of semiconductors devices for Industrial PWM Inverter. In particular we examine the last generations of Silicon Carbide (SiC) MOSFETs and Insulated Gate Bipolar Transistors (IGBTs) and we present a comparison between these devices, obtained by SPICE simulations, both for static characteristics at different temperatures and for dynamic ones

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Deguchi, Tadayoshi, Shuji Katakami, Hiroyuki Fujisawa, et al. "Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs." Materials Science Forum 778-780 (February 2014): 1038–41. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1038.

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High-voltage SiC p-channel insulated-gate bipolar transistors (p-IGBT) utilizing current-spreading layer (CSL) formed by ion implantation are fabricated and their properties characterized. A high blocking voltage of 15 kV is achieved at room temperature by optimizing the JFET length. An ampere-class p-IGBT exhibited a low forward voltage drop of 8.5 V at 100 A/cm2 and a low differential specific on-resistance of 33 mΩ cm2 at 250 °C, while these values were high at room temperature. For further reduction of the forward voltage drop in the on-state and temperature stability, the temperature depe

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Lou, Huifang, and Fei Xiao. "Performance evaluation and stability analysis of super-junction IGBTs in high-temperature environments." Journal of Physics: Conference Series 2797, no. 1 (2024): 012024. http://dx.doi.org/10.1088/1742-6596/2797/1/012024.

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Abstract This paper aims to evaluate and analyze the performance and stability of super-junction IGBTs (Insulated Gate Bipolar Transistors) in high-temperature environments. The study begins with an overview of the significance of IGBTs in the field of power electronics. It provides a comprehensive discussion of the advantages of super-junction technology and the challenges posed by high temperatures on the performance of IGBTs. Through a series of experiments on various commercial super-junction IGBT models, this research thoroughly assesses the devices’ saturated current, threshold voltage,

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Nawaz, Muhammad, and Filippo Chimento. "On the Assessment of Temperature Dependence of 10 - 20 kV 4H-SiC IGBTs Using TCAD." Materials Science Forum 740-742 (January 2013): 1085–88. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1085.

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This paper addresses and evaluates the temperature dependence performance of silicon carbide (4H-SiC) based insulated gate bipolar transistors (IGBTs) using two dimensional numerical computer aided design tool (i.e., Atlas TCAD from Silvaco). Using identical set of device physical parameters (doping, thicknesses), simulated structure was first caliberated with the experimental data. A minority carrier life time in the drift layer of 1.0 – 1.6 µs and contact resistivity of 0.5 - 1.0 x 10-4 Ω-cm2 produces a close match with the experimental device. A set of n type IGBT structures were then numer

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Isa, Ridwanullahi, Naveed Iqbal, Mohammad Abido, Jawad Mirza, and Khurram Karim Qureshi. "Multipoint Thermal Sensing System for Power Semiconductor Devices Utilizing Fiber Bragg Gratings." Applied Sciences 14, no. 23 (2024): 11328. https://doi.org/10.3390/app142311328.

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This study investigates the feasibility of using fiber Bragg grating (FBG) sensors for multipoint thermal monitoring of several power semiconductor devices (PSDs), such as insulated gate bipolar transistors (IGBTs), and rectifiers assembled on a common heatsink in a three-phase inverter. A novel approach is proposed to integrate FBG sensors beneath the baseplates of the IGBT modules, avoiding the need for invasive modifications to the device structure. By strategically positioning multiple FBG sensors, accurate temperature profiles of critical components can be obtained. The experimental resul

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Wang, Baochao, Shili Dong, Shanlin Jiang, et al. "A Comparative Study on the Switching Performance of GaN and Si Power Devices for Bipolar Complementary Modulated Converter Legs." Energies 12, no. 6 (2019): 1146. http://dx.doi.org/10.3390/en12061146.

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The commercial mature gallium nitride high electron mobility transistors (GaN HEMT) technology has drawn much attention for its great potential in industrial power electronic applications. GaN HEMT is known for low on-state resistance, high withstand voltage, and high switching frequency. This paper presents comparative experimental evaluations of GaN HEMT and conventional Si insulated gate bipolar transistors (Si IGBTs) of similar power rating. The comparative study is carried out on both the element and converter level. Firstly, on the discrete element level, the steady and dynamic character

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Abdalgader, Ibrahim A. S., Sinan Kivrak, and Tolga Özer. "Power Performance Comparison of SiC-IGBT and Si-IGBT Switches in a Three-Phase Inverter for Aircraft Applications." Micromachines 13, no. 2 (2022): 313. http://dx.doi.org/10.3390/mi13020313.

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The converters used to integrate the ground power station of planes with the utility grid are generally created with silicon-insulated gate bipolar transistor (Si-IGBT)-based semiconductor technologies. The Si-IGBT switch-based converters are inefficient, oversized, and have trouble achieving pure sine wave voltages requirements. The efficiency of the aircraft ground power units (AGPU) can be increased by replacing existing Si-IGBT transistors with silicon carbide (SiC) IGBTs because of the physical constraints of Si-IGBT switches. The primary purpose of this research was to prove that the eff

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Zhang, Lu Yang, Tian Xiang Dai, Peter M. Gammon, et al. "Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Design." Materials Science Forum 1062 (May 31, 2022): 504–8. http://dx.doi.org/10.4028/p-13z22g.

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The commercial success of silicon carbide (SiC) diodes and MOSFETs for the automotive industry has led many in the field to begin developing ultra-high voltage (UHV) SiC insulated gate bipolar transistors (IGBTs), rated from 6 kV to 30 kV, for future grid conversion applications. Despite this early interest, there has been little work conducted on the optimal layout for the SiC IGBT, most early work seeking to overcome difficulties in fabricating the devices without a P+ substrate. In this paper, numerical TCAD simulations are used to examine the link between the carrier lifetime of SiC IGBTs

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Kong, Kijung, Junhwan Choi, Geonhyeong Park, Seungmin Baek, Sungeun Ju, and Yongsu Han. "Insulated Gate Bipolar Transistor Junction Temperature Estimation Technology for Traction Inverters Using a Thermal Model." Electronics 14, no. 5 (2025): 999. https://doi.org/10.3390/electronics14050999.

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This study proposes a method for estimating the junction temperature of power semiconductors, particularly IGBTs (Insulated Gate Bipolar Transistors) and diodes. Traditional temperature measurement methods using NTC (Negative Temperature Coefficient) sensors have limitations in reflecting dynamic conditions in real time, as temperature changes take time to reach the sensors. To address this, this study proposes a junction temperature estimation method using RC curve fitting and a thermal impedance model. This model represents the thermal behavior of IGBTs and diodes using a Foster thermal netw

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Zhang, Meng, Baikui Li, and Jin Wei. "Exploring SiC Planar IGBTs towards Enhanced Conductivity Modulation Comparable to SiC Trench IGBTs." Crystals 10, no. 5 (2020): 417. http://dx.doi.org/10.3390/cryst10050417.

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The state-of-the-art silicon insulated-gate bipolar transistor (IGBT) features a trench gate, since it enhances the conductivity modulation. The SiC trench IGBT, however, faces the critical challenge of a high electric field in the gate oxide, which is a crucial threat to the device’s reliability. In this work, we explore the possibility of using a SiC planar IGBT structure to approach high performance to the level of a SiC trench IGBT, without suffering the high gate oxide field. The proposed SiC planar IGBT features buried p-layers directly under the p-bodies, and thus can be formed using th

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Almpanis, Ioannis, Paul Evans, Marina Antoniou, et al. "10kV+ Rated SiC n-IGBTs: Novel Collector-Side Design Approach Breaking the Trade-Off between dV/dt and Device Efficiency." Key Engineering Materials 946 (May 25, 2023): 125–33. http://dx.doi.org/10.4028/p-21h5lt.

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10kV+ rated 4H- Silicon Carbide (SiC) Insulated Gate Bipolar Transistors (IGBTs) have the potential to become the devices of choice in future Medium Voltage (MV) and High Voltage (HV) power converters. However, one significant performance concern of SiC IGBTs is the extremely fast collector voltage rise (dV/dt) observed during inductive turn-off. Studies on the physical mechanisms of high dV/dt in 4H-SiC IGBTs revealed the importance of collector-side design in controlling the phenomenon. In this paper we propose a novel collector-side design approach, which consists of four n-type layers with

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Purna Chandra Rao, Podila, Radhakrishnan Anandhakumar, and L. Shanmukha Rao. "Analysis of a novel soft switching bidirectional DC-DC converter for electric vehicle." Bulletin of Electrical Engineering and Informatics 12, no. 5 (2023): 2665–72. http://dx.doi.org/10.11591/eei.v12i5.4505.

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A bidirectional converter (BDC) designed with high voltage gain and it is incorporated with the soft-switching operations to the insulated gate bipolar transistors (IGBTs). The main dual operating characteristics of this converter are boost and buck modes respectively. In order to achieve the reduced switching losses and improved efficiency, the main IGBTs are operated at zero current (ZC) while the IGBTs commutating from turn-on to turn-off state. The ZC turn-off operation is obtained with the aid of soft- switched cell, which consists of resonant inductor (Lr), capacitor and additional IGBTs

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Wang, Xin, Zhenwei Zhou, Shilie He, Junbin Liu, and Wei Cui. "Performance Degradation Modeling and Its Prediction Algorithm of an IGBT Gate Oxide Layer Based on a CNN-LSTM Network." Micromachines 14, no. 5 (2023): 959. http://dx.doi.org/10.3390/mi14050959.

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The problem of health status prediction of insulated-gate bipolar transistors (IGBTs) has gained significant attention in the field of health management of power electronic equipment. The performance degradation of the IGBT gate oxide layer is one of the most important failure modes. In view of failure mechanism analysis and the easy implementation of monitoring circuits, this paper selects the gate leakage current of an IGBT as the precursor parameter of gate oxide degradation, and uses time domain characteristic analysis, gray correlation degree, Mahalanobis distance, Kalman filter, and othe

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Górecki, Paweł, Krzysztof Górecki, and Janusz Zarębski. "Accurate Circuit-Level Modelling of IGBTs with Thermal Phenomena Taken into Account." Energies 14, no. 9 (2021): 2372. http://dx.doi.org/10.3390/en14092372.

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This paper proposes a new compact electrothermal model of the Insulated Gate Bipolar Transistors (IGBT) dedicated for SPICE (Simulation Program with Integrated Circuit Emphasis). This model makes it possible to compute the non-isothermal DC characteristics of the considered transistor and the waveforms of terminal voltages and currents of the investigated device and its internal temperature at transients. This model takes into account the nonlinearity of thermal phenomena in this device. The form of the formulated model is described and the problem of estimating its parameter values is discuss

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Alavi, Omid, Ward De Ceuninck, and Michaël Daenen. "Impact of Solder Voids on IGBT Thermal Behavior: A Multi-Methodological Approach." Electronics 13, no. 11 (2024): 2188. http://dx.doi.org/10.3390/electronics13112188.

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This study investigates the thermal behavior of Insulated Gate Bipolar Transistors (IGBTs) with a focus on the influence of solder voids within the device. Utilizing a combination of Finite Element Method (FEM) simulations, X-ray imaging, and SEM-EDX analysis, we accurately modeled the internal structure of IGBTs to assess the impact of void characteristics on thermal resistance. The findings reveal that the presence and characteristics of solder voids—particularly their size, number, and distribution—significantly affect the thermal resistance of IGBT devices. Experimental measurements valida

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