Dissertations / Theses on the topic 'Insulated gate bipolar transistors'
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1
Mitter, Chang Su. "Insulated gate bipolar transistor (IGBT) simulation using IG-Spice." Thesis, This resource online, 1991. http://scholar.lib.vt.edu/theses/available/etd-03022010-020115/.
2
Withanage, Ruchira Renuka. "Series connection of insulated gate bipolar transistors (IGBTs)." Thesis, Staffordshire University, 2007. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.440357.
3
Antoniou, M. A. "SuperJunction insulated gate bipolar transistor." Thesis, University of Cambridge, 2009. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.596130.
Abstract:
The main achievement of this work is that we show that by intelligently coupling the ideas and designs from various power semiconductor devices, that do not combine under conventional approaches, we can lower the turn-off losses by a factor of 5 (or more) when compared to state-of-the-art medium-high voltage power devices, while maintaining a similarly low on-state voltage drop. In this work we propose an optimised SuperJunction IGBT. The impact of varying the net doping of the n and p drift layer pillars was investigated and the device was optimised to deliver the best trade-off between the on-state and switching performance through extensive numerical simulations, both at room and high temperatures. A PSPICE based model of the SuperJunction IGBT was also developed. The results obtained are in good agreement with the device simulations results. The model allows engineers access to a simple and cheap tool to test and evaluate the performance of the SJIGBT. This model consists of an intrinsic MOSFET and a parallel combination of a wide and a narrow base pnp BJTs. A parasite JFET is also included to account for the restricted current flow between two adjacent p-wells. Here we propose a Semi Superjunction IGBT that maintains a high static and dynamic avalanche breakdown while improving dramatically (by one to two orders of magnitude) the failure rate under cosmic ray exposure. This is unrepentant for any other devices in the field. As a result, this device can provide the solution to unexpected power device breakdowns and therefore save the cost in replacing them and the distraction caused. In the same manner, the introduction of the ‘disconnected p-pillar’ in the Semi-SJIGBT dramatically improves the on-state performance and switching-off speed of the device when compared to the conventional Field Stop IGBT.
4
Hsu, C. W. "Advanced insulated gate bipolar transistor technologies." Thesis, University of Cambridge, 2010. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.604680.
Abstract:
The thesis aims at investigating the state-of-the-art The Insulated Gate Bipolar Transistor (IGBT) technologies and exploring novel device concepts based on the IGBT core in order to enhance device performance and functionality. First, a novel double gate IGBT (DG-IGBT) is demonstrated by numerical simulations and experimental verifications. The new device features a low-grain pnp transistor and an embedded thyristor to enhance the carrier concentration near the emitter side and thus improves the on-state performance. Second, a new IGBT structure featuring N+ islands in the buffer layer to control the on-state carrier density in the drift region is proposed. The new technique allows a precise control of the trade-off between on-state voltage drop and turn-off energy losses by simply adjusting the width and spacing of N+ islands on the mask (at the layout level rather than process level). Furthermore, the N+ islands technique can be used to produce a series of products with different specifications by only changing the mask layout. Finally, a new reverse-conducting IGBT (RC-IGBT) with an embedded thyristor is reported in this dissertation for the first time. The thyristor operates similarly to an anti-parallel diode in its on-state and therefore it can release stored energy in the inductive load when the IGBT turns off. The new RC-IGBT shows a “snapback-free” characteristic due to the existence of the thyristor. In addition, coupled with the N+ islands structures proposed before, the on-state performance and switching speed of the IGBT and thyristor can be optimised according to the requirements of the specific application.
5
de, Silva D. I. M. "Characterisation of insulated gate bipolar transistors for resonant power conversion." Thesis, University of Cambridge, 2006. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.598451.
Abstract:
This thesis presents a comprehensive analysis of the IGBTs, antiparallel diodes and IGBT power modules in resonant switching conditions using experimental results, PSpice simulation results, Medici mixed mode simulation results and mathematical models. A simplified sinusoidal analysis of the series and parallel resonant converters is carried out with particular attention given to power switch behaviour. Resonant converter behaviour under various operating conditions and parameters is investigated in order to develop a complete understanding before power switch characterisation. Furthermore stresses on the power switch and the resonant tank under extreme conditions are determined. Three identically rated IGBTs representing the complete range of IGBT variants available today are selected for the ZCS and ZVS characterisation. Experimental results are obtained from two application circuits which produce practical resonant conditions. Test instrumcnlation includes a highly accurate Lecroy power measure system. PSpice results are obtained using an accurate IGBT model based on the Kraus model while 2-D mixed mode simulations are used to study the internal carrier dynamics under resonant switching. A comprehensive analysis and modelling of the IGBT conduction and switching losses in ZCS and ZVS is carried out. Mathematical models are developed giving careful consideration to all the significant features and dependant parameters, namely collector current, switching frequency and case temperature. Model refinement and validation is carried out using the device characterisation results obtained above. The refined model can be made available in a manufacturer's datasheet either as characteristic equations or characteristic curves. A detailed study of the parasitic effects on IGBT power modules in hard switching and resonant switching conditions is presented. For resonant switching characterisation of the IGBT power module a test rig accommodating four different resonant inverter topologies is designed and built. Parasitic inductance effects due to each IGBT terminal is analysed individually in order to identify the effects clearly. Current sharing imbalances in paralleled IGBTs within power modules are comprehensively analysed. The findings and tools resulting from this research will be useful for various sectors in the power electronics industry. The IGBT and power diode characterisations as well as the power loss models will assist the power device designers in the development of optimised devices for future applications. Power device selection for resonant applications will be made accurate and easier by including the characteristic curves or equations within published datasheets. Furthermore optimisation of the parasitics in the power modules will be made possible for specific applications. This work can ultimately lead to the availability of application specific IGBTs and IGBT power modules for resonant switching applications.
6
Hsieh, Pei-Shan. "IGBT design, modelling and novel devices." Thesis, University of Cambridge, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708993.
7
Camuso, Gianluca. "LIGBT design, physics and modelling." Thesis, University of Cambridge, 2015. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708803.
8
Yang, Xin. "Controlled IGBT switching for power electronics building block." Thesis, University of Cambridge, 2014. https://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.708442.
9
Wendt, Sven. "Turbogenerator mit Insulated Gate Bipolar Transistor (IGBT)-Umrichter zur dezentralen Energieversorgung." Dresden TUDpress, 2009. http://d-nb.info/998316393/04.
10
Menon, Kalyani. "Simulation study of silicon carbide Clustered Insulated Gate Bipolar Transistor (CIGBT)." Thesis, University of Sheffield, 2015. http://etheses.whiterose.ac.uk/10402/.
Abstract:
Power semiconductor devices are inevitable parts of a power electronic converter system, with nearly 50% of electricity used in the world controlled by them. Silicon power devices have been used in power systems ever since the vacuum tubes were replaced by them in the 1950s. The performance of devices in a circuit is decided by the switching strategies and the inherent device performance like its on-state voltage, turn-on and turn-off times and hence their losses. Due to their inherent material properties, the growing interest in wide band gap devices is in applications beyond the limits of Si or GaAs. SiC is a wide bandgap material with properties that make it an attractive alternative to Silicon for high power applications. Silicon Insulated Gate Bipolar Transistor (IGBT) is the most favourable device in the industry today for medium/high power applications. Silicon Clustered Insulated Gate Bipolar Transistor (CIGBT) is experimentally proven to demonstrate better performance as compared to their IGBT counterparts. In this work, the theoretical limit of silicon CIGBT is studied in great detail and compared to previously predicted IGBT limit. Later part of this thesis would explain the design and optimization of CIGBT in 4H- SiC. An in-depth simulation study of the same device is performed for both static and dynamic characteristics. Both planar and trench gate CIGBT devices are discussed here along with possible fabrication process. Along with this, a comparison study between CIGBT with its equivalent IGBT in SiC is also performed through extensive 2D simulations in MEDICITM in terms of their static and dynamic characteristics. Finally, a comparative study of P channel and N channel SiC CIGBT devices is evaluated through simulations.
11
Nicholls, Jonathan Christopher. "Soft-switching performance analysis of the clustered insulated gate bipolar transistor (CIGBT)." Thesis, De Montfort University, 2009. http://hdl.handle.net/2086/2396.
Abstract:
The use of Insulated Gate Bipolar Transistors (IGBT) have enabled better switching performance than the Metal Oxide Semiconductor Field effect Transistor (MOSFET) in medium to high power applications due to their lower on-state power loss and higher current densities. The power ratings of IGBTs are slowly increasing and are envisaged to replace thyristors in medium power applications such as High Voltage Direct Current (HVDC) inverter systems and traction drive controls. Devices such as the MOS Controlled Thyristor (MCT) and Emitter Switched Thyristor (EST) were developed in an effort to further simplify drive requirements of thyristors by incorporating a voltage controlled MOS gate into the thyristor structure. However, the MCT is unable to achieve controlled current saturation which is a desirable characteristic of power switching devices while the EST has only limited control. The IGBT can achieve current saturation, however, due to the transistor based structure it exhibits a larger on-state voltage in high power applications compared with thyristor based devices. MOS Gated Thyristor (MGT) devices are a promising alternative to transistor based devices as they exhibit a lower forward voltage drop and improved current densities. This current research focuses on the Clustered Insulated Gate Bipolar Transistor (CIGBT) whilst being operated under soft-switching regimes. The CIGBT is a MOS gated thyristor device that exhibits a unique self-clamping feature that protects cathode cells from high anode voltages under all operating conditions. The self-clamping feature also enables current saturation at high gate biases and provides low switching losses. Its low on-state voltage and high voltage blocking capabilities make the CIGBT suitable as a contender to the IGBT in medium to high power switching applications. For the first time, the CIGBT has been operated under soft-switching regimes and transient over-voltages at turn-on have been witnessed which have been found to be associated with a number of factors. The internal dynamics of the CIGBT have been analysed using 2D numerical simulations and it has been shown that a major influence on the peak voltage is the P well spacing within the CIGBT structure. For example, Small adjacent P well spacings within the device results in an inability for the CIGBT to switch iv on correctly. Further to this, implant concentrations of the n well region during device fabrication can also affect the turn-on transients. Despite this, the CIGBT has been experimental analysed under soft-switching conditions and found to outperform the IGBT by 12% and 27% for on-state voltage drop and total energy losses respectively. Turn off current bumps have been seen whilst switching the device in zero voltage and zero current switching mode of operation and the internal dynamics have been analysed to show the influence upon the current at turn off. Preliminary results on the Trench CIGBT (TCIGBT) under soft switching conditions has also been analysed for the first time and was found to have a reduced peak over-voltage and better switching performance than the planer CIGBT. Through optimisation of the CIGBT structure and fabrication process, it is seen that the device will become a suitable replacement to IGBT in medium power application.
12
Eio, Samson. "Current Injection Techniques to Optimise the Switching Transients of Power Diodes. Thyristors and Insulated Gate Bipolar Transistors (IGBTs)." Thesis, Staffordshire University, 2008. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.522131.
13
Buschendorf, Martin [Verfasser]. "Untersuchungen zur Reihenschaltung von 4,5-kV-Insulated Gate Bipolar Transistor (IGBT) Modulen / Martin Buschendorf." München : Verlag Dr. Hut, 2020. http://d-nb.info/121947116X/34.
14
Fourie, Reinhart. "The development of a IGBT-based tap changer." Thesis, Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/4272.
Abstract:
Thesis (MScEng (Electrical and Electronic Engineering))--University of Stellenbosch, 2010.ENGLISH ABSTRACT: Voltage regulation on distribution networks has so far been done by means of mechanical tap changers. However, these tap changers are plagued by high maintenance costs due to the arcing caused while switching, which degrades both the contacts and transformer oil. The major advances made during the last decade with regard to semiconductor technology have led to the development of high power IGBTs. These high power IGBTs are capable of conducting currents up to 1 000 A, while the voltage over the IGBT reaches well over 3 000 V. Using these high power IGBTs to design and build a solid-state tap changer allows the tap changer to regulate the output voltage with higher accuracy and speed. The supporting hardware is also discussed, while the design is verified by the use of simulations and practical measurements conducted on a scale-model of the IGBT-based solid-state tap changer.
AFRIKAANSE OPSOMMING: Spannings regulasie op distribusie netwerke word hedendaags verrig deur meganiese tap geskalde spanning reguleerders. Maar hierdie tap skakelaars word konstant beïnvloed deur oorvonking wat plaasvind tussen die kontakte wat hierdie kontakte beskadig en die transformator olie degradeer. Die laaste dekade het groot vordering getoon in halfgeleier navorsing wat gelei het tot die ontwikkeling van hoë drywing halfgeleiers. Die halfgeleiers of IGBTs kan strome so groot soos 1 000 A gelei terwyl die spanning oor die halfgeleier 3 000 V kan oorskry. Die gebruik van die hoë drywing halfgeleiers maak die pad oop vir die ontwerp en bou van ’n tap geskakelde reguleerder wat die uitree spanning akurater en vinniger kan reguleer. Die aanvullende hardeware is ook bespreek en die ontwerp is geverifieër deur middel van simulasies en deur praktiese metings wat geneem is op ’n skaal model van die hoogspanning spannings reguleerder.
15
Ridenour, Daniel Keith. "Examination of Power Systems Solutions Considering High Voltage Direct Current Transmission." Thesis, Virginia Tech, 2015. http://hdl.handle.net/10919/63927.
Abstract:
Since the end of the Current Wars in the 19th Century, alternating current (AC) has dominated the production, transmission, and use of electrical energy. The chief reason for this dominance was (and continues to be) that AC offers a way minimize transmission losses yet transmit large power from generation to load. With the Digital Revolution and the entrance of most of the post-industrialized world into the Information Age, energy usage levels have increased due to the proliferation of electrical and electronic devices in nearly all sectors of life. A stable electrical grid has become synonymous with a stable nation-state and a healthy populace.
Large-scale blackouts around the world in the 20th and the early 21st Centuries highlighted the heavy reliance on power systems and because of that, governments and utilities have strived to improve reliability. Simultaneously occurring with the rise in energy usage is the mandate to cut the pollution by generation facilities and to mitigate the impact grid expansion has on environment as a whole. The traditional methods of transmission expansion are beginning to show their limits as utilities move generation facilities farther from load centers, which reduces geographic diversity, and the integration of nondispatchable, renewable energy sources upsets the current operating regime. A challenge faces engineers - how to expand generation, expand transmission capacity, and integrate renewable energy sources while maintaining maximum system efficiency and reliability.
A technology that may prove beneficial to the operation of power system is high voltage direct current transmission. The technology brings its own set of advantages and disadvantages, which are in many ways the complement of AC. It is important to update transmission planning processes to account for the new possibilities that HVDC offers. This thesis submits a discussion of high voltage direct current transmission technology itself and an examination of how HVDC can be considered in the planning process.Master of Science
16
De, Maglie Rodolphe. "Modélisation de différentes technologies de transistors bipolaires à grille isolée pour la simulation d'applications en électronique de puissance." Phd thesis, Université Paul Sabatier - Toulouse III, 2007. http://tel.archives-ouvertes.fr/tel-00153597.
Abstract:
L'analyse et la conception des systèmes en électronique de puissance nécessitent la prise en compte de phénomènes complexes propres à chaque composant du système mais aussi en accord avec son environnement. La description précise du comportement d'un système passe par la simulation utilisant des modèles suffisamment précis de tous ces composants. Dans notre étude, les modèles basés sur la physique des semiconducteurs permettent de décrire le comportement de la charge stockée dans la base large et peu dopée des composants bipolaires. Cette description fine est indispensable à la bonne précision de nos modèles car l'évolution des porteurs dans la base est indissociable du comportement en statique et en dynamique du composant. Ainsi, les modèles physiques analytiques de diode PiN mais surtout d'IGBT NPT ou PT, ayant une technologie de grille 'planar' ou à tranchées sont présentés puis validés. La modélisation de systèmes complexes en électronique de puissance est abordée au travers de deux études. La première concerne l'association des modèles de semiconducteurs avec des modèles de la connectique dans un module de puissance du commerce (3300V /1200A). Une analyse sur les déséquilibres en courant entre les différentes puces en parallèle est donnée. La seconde présente une architecture innovante issue de l'intégration fonctionnelle. Cette architecture faibles pertes permet d'améliorer le compromis chute de tension à l'état passant/ énergie de commutation à l'ouverture inhérent aux composants IGBT. Sa réalisation technologique est présentée au travers de mesure.
17
Maglie, Rodolphe de. "Modélisation de différentes technologies de transistors bipolaires à grille isolée pour la simulation d'applications en électronique de puissance." Toulouse 3, 2007. https://tel.archives-ouvertes.fr/tel-00153597.
Abstract:
L'analyse et la conception des systèmes en électronique de puissance nécessitent la prise en compte de phénomènes complexes propres à chaque composant du système mais aussi en accord avec son environnement. La description précise du comportement d'un système passe par la simulation utilisant des modèles suffisamment précis de tous ces composants. Dans notre étude, les modèles basés sur la physique des semiconducteurs permettent de décrire le comportement de la charge stockée dans la base large et peu dopée des composants bipolaires. Cette description fine est indispensable à la bonne précision de nos modèles car l'évolution des porteurs dans la base est indissociable du comportement en statique et en dynamique du composant. Ainsi, les modèles physiques analytiques de diode PiN mais surtout d'IGBT NPT ou PT, ayant une technologie de grille 'planar' ou à tranchées sont présentés puis validés. La modélisation de systèmes complexes en électronique de puissance est abordée au travers de deux études. La première concerne l'association des modèles de semiconducteurs avec des modèles de la connectique dans un module de puissance du commerce (3300V /1200A). Une analyse sur les déséquilibres en courant entre les différentes puces en parallèle est donnée. La seconde présente une architecture innovante issue de l'intégration fonctionnelle. Cette architecture faibles pertes permet d'améliorer le compromis chute de tension à l'état passant/ énergie de commutation à l'ouverture inhérent aux composants IGBT. Sa réalisation technologique est présentée au travers de mesureAnalysis and systems design in power electronics must taking into account of specific complex phenomena to each components of the system but also in agreement with its environment. Accurate description of a system needs for simulations sufficiently accurate models of all its components. In our study, the models based on the semiconductor physics make it possible to describe the behavior of the stored charge in the deep and low doped base in the bipolar devices. This fine description is essential to the good precision of our models because the evolution of the carriers in the base is indissociable of the in static and dynamic behaviors of the component. Thus, the analytical physical models of PiN diode, NPT or PT IGBT with planar or trench gate structure are presented then validated. The modeling of complex systems in power electronics is approached through two studies. The first deals with to the association of our semiconductor models and wiring model of an industrial power module (3300V /1200A). An analysis on imbalances between the different chips in parallel is given. The second study presents a innovating architecture resulting from the functional integration. This low losses improve the tradeoff between on-state drop voltage and turn-off transient energy in IGBT component. Its technological realization is presented through measurements
18
Amimi, Adel. "Modèle électro-thermique unidimensionnel du transistor bipolaire à grille isolée (IGBT) pour la simulation de circuits de puissance." Rouen, 1997. http://www.theses.fr/1997ROUES033.
Abstract:
Dans le domaine de l'électronique de puissance, où l'environnement et le mode de fonctionnement du composant jouent un rôle primordial, nous constatons que les aspects thermiques doivent être évalués de la même manière que les aspects strictement électriques. Cela suppose entre autres que la température interne des composants doit pouvoir évoluer comme toutes les grandeurs électriques. Dans ce contexte, nous avons développé un modèle analytique du transistor bipolaire à grille isolée (IGBT) prenant en compte les interactions électro-thermiques dans le composant, en associant au modèle électrique du composant un réseau thermique. Pour cela, deux solutions de complexité différentes ont été envisagées pour l'élaboration du modèle thermique. La première approche (cellulaire) est basée sur l'analogie électrique-thermique. En effet, la propagation du flux de chaleur dans le composant est modélisée par un réseau cellulaire RTH(I) - CTH(I) dont les caractéristiques sont déterminées à partir de l'impédance thermique transitoire ZTH du composant. La seconde approche (dite mixte), fondée sur la résolution à une dimension de l'équation de diffusion de la chaleur, utilise un calcul plus précis de la température dans la couche de silicium, tout en conservant une représentation à base de cellules RTH-CTH pour l'ensemble du boîtier et de l'environnement. Le modèle électro-thermique ainsi développé est implanté en langage MAST dans le simulateur de circuits Saber.
19
Bai, Hao. "Device-level real-time modeling and simulation of power electronics converters." Thesis, Bourgogne Franche-Comté, 2019. http://www.theses.fr/2019UBFCA014.
Abstract:
Pour le développement des convertisseurs d’électronique de puissance, la simulation en temps réel joue un rôle essentiel dans la validation des performances des convertisseurs et de leur contrôle avant leur réalisation. Cela permet de simuler et reproduire avec précision les formes d’ondes des courants et tensions des convertisseurs de puissance modélisés avec un pas de temps de simulation correspondant exactement au temps physique. Les circuits d’électronique de puissance sont caractérisés par le comportement non linéaire des interrupteurs. Par conséquent, les représentations des dispositifs de commutation sont cruciales dans la simulation en temps réel. Le modèle au niveau système est largement utilisé dans les simulateurs temps réel du commerce et les plates-formes expérimentales, qui modélisent les comportements des interrupteurspar deux états stationnaires distincts - passant et bloqué - et négligent tous les phénomènes transitoires. Ces dernières années, la simulation temps réel au niveau du composant est devenue populaire car elle permet de simuler les formes d'onde de commutation transitoires et de fournir des informations utiles concernant les contraintes sur les interrupteurs , les pertes, les effets parasites et les comportements électrothermiques. Néanmoins, la simulation temps réel au niveau du composant est contrainte par le pas de temps transitoire réalisable en raison des quantités de calcul accrues introduites par la non-linéarité du modèle de commutation.Afin d'intégrer le modèle au niveau du composant dans la simulation en temps réel, cette thèse porte sur l'exploration approfondie des techniques de modélisation et de simulation en temps réel au niveau composantdes convertisseurs d’électronique de puissance. Les techniques de simulation en temps réel les plus récentes sont d’abord examinées de manière exhaustive, tant au niveau du système que du composant. En outre, deux approches de modélisation au niveau du composant sont proposées, à savoir le modèle haute résolution quasi-transitoire (HRQT) et le modèle transitoire linéaire par morceaux (PLT). Dans le modèle HRQT, le modèle de réseau est implémenté par une simulation au niveau système tout en générant les formes d'onde de commutation transitoires avec une résolution de 5 ns, ce qui permet de simuler le convertisseur de puissance avec des transitoires rapides jusqu'à des dizaines de nanosecondes. Compte tenu des effets des transitoires sur l’ensemble du réseau, les modèles non linéaires des IGBT et diodes sont linéarisés par morceaux dans le modèle PLT. À l'aide de techniques efficaces de découplage de circuits, le modèle du convertisseur de puissance au niveau composant peut être simulé de manière stable avec un pas de temps de simulation global de 50 ns. Les deux modèles proposés sont testés et validés via différents cas sur une plate-forme temps réel de National Instruments basée sur un FPGA, comprenant un convertisseur boost boosté entrelacé (FIBC) pour le modèle HRQT, un convertisseur DC-DC-AC pour le modèle PLT et un convertisseur modulaire à plusieurs niveaux (MMC) pour les deux. Des résultats précis sont produits par rapport aux outils de simulation hors ligne. L'efficacité et les valeurs d'application sont également vérifiées par les résultats d’essais en temps réelIn the development cycles of the power electronics converters, the real-time simulation plays an essential role in validating the converters’ and the controllers’ performances before their implementations on real systems. It can simulate and reproduce the current and voltage waveforms of the modeled power electronics converters accurately with a simulation time-step exactly corresponding to the physical time. The power electronics circuits are characterized by nonlinear switching behaviors. Therefore, the representations of switching devices are crucial in real-time simulation. The system-level model is widely used in both commercial real-time simulators and the experimentally built real-time platforms, which models the switching behaviors by two separate steady states – turn-on and turn-off, and neglects all the switching transients. In recent years, the device-level real-time simulation has become popular since it can simulate the transient switching waveforms and provide useful information with regard to the device stresses, the power losses, the parasitic effects, and electro-thermal behaviors. Nevertheless, the device-level real-time simulation is constrained by the achievable transient time-step due to the increased computational amounts introduced by the nonlinearity of the switch model.In order to integrate the device-level model in the real-time simulation, in this thesis, the device-level real-time modeling and simulation techniques of the power electronics converters are deeply explored. The state-of-art real-time simulation techniques are firstly reviewed comprehensively with regard to both system-level and device-level. Moreover, two device-level modeling approaches are proposed, including high- resolution quasi-transient model (HRQT) and the piecewise linear transient (PLT) model. In HRQT model, the network model can be implemented by system-level simulation while generating the transient switching waveforms with a 5 ns resolution, which is good at simulating the power converter with fast switching transients down to tens of nanoseconds. Considering the effects of the transient behaviors on the entire network, the PLT model is proposed by piecewise linearizing the nonlinear IGBT and diode equivalent models. With the help of effective circuit decoupling techniques, the device-level power converter model can be simulated stably with a 50 ns global simulation time-step. The proposed two models are tested and validated via different case studies on National Instruments (NI) FPGA-based real-time platform, including floating interleaved boost converter (FIBC) for HRQT model, DC-DC-AC converter for PLT model, and modular multi-level converter (MMC) for the both. Accurate results are produced compared to offline simulation tools. The effectiveness and the application values are further verified by the results of the real-time experiments
20
Aviñó, Salvadó Oriol. "Contribution to the study of the SiC MOSFETs gate oxide." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI110/document.
Abstract:
Les MOSFET en SiC sont appelées à remplacer les IGBT en Silicium pour des applications de demandant une plus forte vitesse de commutation. Cependant, les MOSFET en SiC ont encore quelques problèmes de fiabilité, tels que la robustesse de la diode interne ou bien la robustesse de l'oxyde de grille. Cette dernière est liée à l’oxyde de grille des composants du type MOSFET. Des instabilités de la tension de seuil sont aussi signalées. Cette thèse aborde ces deux sujets sur des MOSFET commerciaux 1200 V. L'étude de la diode interne met en évidence que les caractéristiques I-V (de la diode intrinsèque) demeurent stables après l'application d'un stress. Cependant, une dérive surprenante de la tension de seuil apparaît. Des tests complémentaires, en stressant le canal à la place de la diode, avec les mêmes contraintes n'ont pas montré de dérive significative de la tension de seuil. Donc, l'application d'un stress en courant quand le composant est en mode d'accumulation semble favoriser l'apparition des instabilités de la tension de seuil. La robustesse de l'oxyde de grille concerne les instabilités de la tension de seuil, mais aussi l'estimation de la durée de vie à des conditions d'opération nominales. Les résultats obtenus montrent que la durée de vie de l'oxyde de grille n'est plus un problème. Pourtant, le suivi du courant de grille pendant les tests ainsi que les caractérisations de la capacité de grille mettent en évidence des translations de la courbe C(V) à cause des phénomènes d’injection des porteurs et de piégeage, mais aussi la possible présence d’ions mobiles. Aussi, une bonne analyse des dégradations et dérives liées à l’oxyde de grille doit être réaliséeSiC power MOSFETs are called to replace Si IGBT for some medium and high power applications (hundreds of kVA). However, even if crystallographic defects have been drastically reduced, SiC MOSFETs are always concerned by some robustness issues such as the internal diode robustness or the robustness of the gate oxide. The last one especially affects MOSFETs devices and is linked to the apparition of instabilities in the threshold voltage. This thesis focuses on these two issues. The study of the internal diode robustness highlighted that the I-V curve (of the intrinsic diode) remains stable after the application of a current stress in static mode, but also with the DUT placed in a converter with inductive switchings. These are the most stressful conditions. However, a surprising drift in the threshold voltage has been observed when some devices operates under these conditions; in static mode or in a converter. Complementary tests stressing the channel instead of the internal diode in the same temperature and dissipated power, have not resulted in a drift of the threshold voltage. Thus, the application of a current stress when the device is in accumulation regime could favour the apparition of instabilities in the threshold voltage. The study of the gate oxide focus in the instabilities of the threshold voltage, but also on the expected lifetime of the oxide at nominal conditions. Results obtained shown that the expected lifetime (TDDB) of the oxide is no longer a problem. Indeed, tests realized in static mode, but also in a converter under inductive switching conditions resulted in expected lifetimes well above 100 years. However, the monitoring of the gate current during the test and gate capacitance characterizations C(V) highlighted a shift in the capacitance due to carrier injection and trapping phenomena and probably to the presence of mobile-ions. Still regarding the instabilities of the threshold voltage, classic tests resulted in no significant variations of the threshold voltage at 150 _C. However, at 200 _C the drift observed for some manufacturers is higher than +30%. This is unacceptable for high-temperature applications and evidence that the quality of the gate oxide and the SiC=SiO2 interface must continue to be improved, together with the manufacturing methods to minimize the presence of mobile ions in the substrate
21
Lefebvre, Stéphane. "Contribution à la caractérisation de l'IGBT en commutation à zéro de courant." Cachan, Ecole normale supérieure, 1994. http://www.theses.fr/1994DENS0009.
Abstract:
Cette étude analyse la commutation de blocage d'un igbt utilise en commutation quasi-résonnante a zéro de courant. Deux igbt de structure technologique différente ont été étudiés, le premier est à base non homogène et a couche tampon, le second à base homogène et contrôlé d'injection de charges par l'émetteur. L'évolution de la charge stockée dans la base du transistor bipolaire interne au blocage est suivie et analysée à l'aide de simulations et d'expérimentations. Différents éléments interviennent sur l'évacuation de la charge stockée donc sur les pertes au blocage, qu'ils soient propres au composant (coefficients d'injection ou durées de vie) ou a sa commande (maintien du canal lors de la conduction de la diode antiparallèle). Ce qui permet de comprendre pourquoi les pertes au blocage sont plus faibles en commutation a zero de courant qu'en commutation commandée. Une caractérisation électrique et thermique de l'igbt permet ensuite de quantifier l'influence des conditions de commutation sur les pertes au blocage. Des limites de fonctionnement sont ainsi définies, pour s'affranchir de l'emballement thermique, principale cause de destruction des igbt a couche tampon en zcs a fréquence de découpage élevée
22
Reynes, Hugo. "Conception d'un module électronique de puissance pour application haute tension." Thesis, Lyon, 2018. http://www.theses.fr/2018LYSEI035.
Abstract:
Satisfaire les besoins en énergie de manière responsable est possible grâce aux énergies renouvelables, notamment éoliennes et solaires. Cependant ces centres de captation d’énergie sont éloignés dans zones de consommation. Le transport de l’énergie via des réseaux HVDC (haute tension courant continu) permet un rendement et une flexibilité avantageuse face au transport HVAC (haute tension courant alternatif). Ceci est rendu possible grâce aux convertisseurs utilisant l’électronique de puissance. Les récents développements sur les semi-conducteurs à large bande interdite, plus particulièrement le carbure de silicium (SiC) offrent la possibilité de concevoir ces convertisseurs plus simples, utilisant des briques technologiques de plus fort calibre (≤ 10 kV). Cependant le packaging, essentiel à leur bon fonctionnement, ne suit pas ces évolutions. Dans cette thèse, nous explorons les technologies actuelles ainsi que les limites physique et normatives liées au packaging haute tension. Des solutions innovantes sont proposées pour concevoir un module de puissance haute tension, impactant que faiblement les paramètres connexes (résistance thermique, isolation électrique et paramètres environnementaux). Les éléments identifiés comme problématiques sont traités individuellement. La problématique des décharges partielles sur les substrats céramiques métallisés est développée et une solution se basant sur les paramètres géométriques a été testée. Le boitier standard type XHP-3 a été étudié et une solution permettant de le faire fonctionner à 10 kV à fort degré de pollution a été développéeThe supply of carbon-free energy is possible with renewable energy. However, windfarms and solar power plants are geographically away from the distribution points. Transporting the energy using the HVDC (High Voltage Direct Current) technology allow for a better yield along the distance and result in a cost effective approach compared to HVAC (High Voltage Alternative Current) lines. Thus, there is a need of high voltage power converters using power electronics. Recent development on wide bandgap semiconductors, especially silicon carbide (SiC) allow a higher blocking voltage (around 10 kV) that would simplify the design of such power electronic converters. On the other hand, the development on packaging technologies needs to follow this trend. In this thesis, an exploration of technological and normative limitation has been done for a high voltage power module design. The main hot spot are clearly identified and innovative solutions are studied to provide a proper response with a low impact on parasitic parameters. Partial Discharges (PD) on ceramic substrates is analyzed and a solution of a high Partial Discharge Inception Voltage (PDIV) is given based on geometrical parameters. The XHP-3 like power modules are studied and a solution allowing a use under 10 kV at a high pollution degree (PD3) is given
23
Alghassi, Alireza. "Prognostics and health management of power electronics." Thesis, Cranfield University, 2016. http://dspace.lib.cranfield.ac.uk/handle/1826/10968.
Abstract:
Prognostics and health management (PHM) is a major tool enabling systems to evaluate their reliability in real-time operation. Despite ground-breaking advances in most engineering and scientific disciplines during the past decades, reliability engineering has not seen significant breakthroughs or noticeable advances. Therefore, self-awareness of the embedded system is also often required in the sense that the system should be able to assess its own health state and failure records, and those of its main components, and take action appropriately. This thesis presents a radically new prognostics approach to reliable system design that will revolutionise complex power electronic systems with robust prognostics capability enhanced Insulated Gate Bipolar Transistors (IGBT) in applications where reliability is significantly challenging and critical. The IGBT is considered as one of the components that is mainly damaged in converters and experiences a number of failure mechanisms, such as bond wire lift off, die attached solder crack, loose gate control voltage, etc. The resulting effects mentioned are complex. For instance, solder crack growth results in increasing the IGBT’s thermal junction which becomes a source of heat turns to wire bond lift off. As a result, the indication of this failure can be seen often in increasing on-state resistance relating to the voltage drop between on-state collector-emitter. On the other hand, hot carrier injection is increased due to electrical stress. Additionally, IGBTs are components that mainly work under high stress, temperature and power consumptions due to the higher range of load that these devices need to switch. This accelerates the degradation mechanism in the power switches in discrete fashion till reaches failure state which fail after several hundred cycles. To this end, exploiting failure mechanism knowledge of IGBTs and identifying failure parameter indication are background information of developing failure model and prognostics algorithm to calculate remaining useful life (RUL) along with ±10% confidence bounds. A number of various prognostics models have been developed for forecasting time to failure of IGBTs and the performance of the presented estimation models has been evaluated based on two different evaluation metrics. The results show significant improvement in health monitoring capability for power switches. Furthermore, the reliability of the power switch was calculated and conducted to fully describe health state of the converter and reconfigure the control parameter using adaptive algorithm under degradation and load mission limitation. As a result, the life expectancy of devices has been increased. These all allow condition-monitoring facilities to minimise stress levels and predict future failure which greatly reduces the likelihood of power switch failures in the first place.
24
Smith, Robert S. "The insulated gate field effect transistor (IGFET) as a microluminometer." Diss., Virginia Tech, 1991. http://hdl.handle.net/10919/39839.
25
Faidallah, Amer. "Contribution à l'identification et à la commande vectorielle des machines asynchrones." Vandoeuvre-les-Nancy, INPL, 1995. http://www.theses.fr/1995INPL014N.
Abstract:
Aujourd’hui la machine asynchrone gagne beaucoup de terrain dans les applications nécessitant la commande de vitesse, de couple ou de position. Ce mémoire apporte une contribution à l'identification des paramètres de ce type de machine et à l'amélioration de sa commande vectorielle. La première partie concerne des procédés d'identification des paramètres de la machine avec des moyens informatiques à la fois modernes et performants. Afin de découpler la commande de flux de celle du couple, une orientation du flux statorique, rotorique ou magnétisant est nécessaire. Après analyse c'est l'orientation du flux rotorique qui a été retenue. Le découplage des commandes et des courants isd et isq n'étant pas facile à assurer dans le cas d'une alimentation en tension: un bloc de calcul, placé en aval des régulateurs des courants est proposé pour résoudre ce problème. Les échauffements des conducteurs dans la machine, la saturation des circuits magnétiques peuvent dégrader la commande vectorielle, qu'elle soit de type directe ou indirecte. Des solutions sont proposées et des simulations sont faites pour en tester les performances. Ajoutée aux problèmes décrits, l'influence des paramètres se fait tout particulièrement sentir dans le cas d'une commande sans capteur de vitesse. Une méthode est proposée pour minimiser cette influence sur l'estimateur de vitesse. Un banc expérimental a été réalisé. Il permet d'effectuer toutes les études expérimentales sans une intervention matérielle quand on veut passer d'une stratégie à une autre
26
Nouman, Ziad. "Užití programovatelných hradlových polí v systémech průmyslové automatizace." Doctoral thesis, Vysoké učení technické v Brně. Fakulta elektrotechniky a komunikačních technologií, 2016. http://www.nusl.cz/ntk/nusl-234615.
Abstract:
Tato disertační práce se zabývá využitím programovatelných hradlových polí (FPGA) v diagnostice měničů, využívajících spínaných IGBT tranzistorů. Je zaměřena na budiče těchto výkonových tranzistorů a jejich struktury. Přechodné jevy veličin, jako jsou IG, VGE, VCE během procesu přepínání (zapnutí, vypnutí), mohou poukazovat na degradaci IGBT. Pro měření a monitorování těchto veličin byla navržena nová architektura budiče IGBT. Rychlé měření a monitorování během přepínacího děje vyžaduje vysokou vzorkovací frekvenci. Proto jsou navrhovány paralelní vysokorychlostní AD převodníky (> 50 MSPS). Práce je zaměřena převážně na návrh zařízení s FPGA včetně hardware a software. Byla navržena nová deska plošných spojů s FPGA, která plní požadované funkce, jako je řízení IGBT pomocí vícenásobných paralelních koncových stupňů, monitorování a diagnostiku, a propojení s řídicí jednotkou měniče.
27
Liu, Fanyu. "Caractérisation électrique et modélisation du transport dans matériaux et dispositifs SOI avancés." Thesis, Université Grenoble Alpes (ComUE), 2015. http://www.theses.fr/2015GREAT034/document.
Abstract:
Cette thèse est consacrée à la caractérisation et la modélisation du transport électronique dans des matériaux et dispositifs SOI avancés pour la microélectronique. Tous les matériaux innovants étudiés(ex: SOI fortement dopé, plaques obtenues par collage etc.) et les dispositifs SOI sont des solutions possibles aux défis technologiques liés à la réduction de taille et à l'intégration. Dans ce contexte,l'extraction des paramètres électriques clés, comme la mobilité, la tension de seuil et les courants de fuite est importante. Tout d'abord, la caractérisation classique pseudo-MOSFET a été étendue aux plaques SOI fortement dopées et un modèle adapté pour l'extraction de paramètres a été proposé. Nous avons également développé une méthode électrique pour estimer la qualité de l'interface de collage pour des plaquettes métalliques. Nous avons montré l'effet bipolaire parasite dans des MOSFET SOI totalement désertés. Il est induit par l’effet tunnel bande-à-bande et peut être entièrement supprimé par une polarisation arrière. Sur cette base, une nouvelle méthode a été développée pour extraire le gain bipolaire. Enfin, nous avons étudié l'effet de couplage dans le FinFET SOI double grille, en mode d’inversion. Un modèle analytique a été proposé et a été ensuite adapté aux FinFETs sans jonction(junctionless). Nous avons mis au point un modèle compact pour le profil des porteurs et des techniques d’extraction de paramètresThis thesis is dedicated to the electrical characterization and transport modeling in advanced SOImaterials and devices for ultimate micro-nano-electronics. SOI technology is an efficient solution tothe technical challenges facing further downscaling and integration. Our goal was to developappropriate characterization methods and determine the key parameters. Firstly, the conventionalpseudo-MOSFET characterization was extended to heavily-doped SOI wafers and an adapted modelfor parameters extraction was proposed. We developed a nondestructive electrical method to estimatethe quality of bonding interface in metal-bonded wafers for 3D integration. In ultra-thin fully-depletedSOI MOSFETs, we evidenced the parasitic bipolar effect induced by band-to-band tunneling, andproposed new methods to extract the bipolar gain. We investigated multiple-gate transistors byfocusing on the coupling effect in inversion-mode vertical double-gate SOI FinFETs. An analyticalmodel was proposed and subsequently adapted to the full depletion region of junctionless SOI FinFETs.We also proposed a compact model of carrier profile and adequate parameter extraction techniques forjunctionless nanowires
28
Zabihi, Sasan. "Flexible high voltage pulsed power supply for plasma applications." Thesis, Queensland University of Technology, 2011. https://eprints.qut.edu.au/48137/1/Sasan_Zabihi_Sheykhrajeh_Thesis.pdf.
Abstract:
Demands for delivering high instantaneous power in a compressed form (pulse shape) have widely increased during recent decades. The flexible shapes with variable pulse specifications offered by pulsed power have made it a practical and effective supply method for an extensive range of applications. In particular, the release of basic subatomic particles (i.e. electron, proton and neutron) in an atom (ionization process) and the synthesizing of molecules to form ions or other molecules are among those reactions that necessitate large amount of instantaneous power. In addition to the decomposition process, there have recently been requests for pulsed power in other areas such as in the combination of molecules (i.e. fusion, material joining), gessoes radiations (i.e. electron beams, laser, and radar), explosions (i.e. concrete recycling), wastewater, exhausted gas, and material surface treatments. These pulses are widely employed in the silent discharge process in all types of materials (including gas, fluid and solid); in some cases, to form the plasma and consequently accelerate the associated process.
Due to this fast growing demand for pulsed power in industrial and environmental applications, the exigency of having more efficient and flexible pulse modulators is now receiving greater consideration. Sensitive applications, such as plasma fusion and laser guns also require more precisely produced repetitive pulses with a higher quality. Many research studies are being conducted in different areas that need a flexible pulse modulator to vary pulse features to investigate the influence of these variations on the application. In addition, there is the need to prevent the waste of a considerable amount of energy caused by the arc phenomena that frequently occur after the plasma process. The control over power flow during the supply process is a critical skill that enables the pulse supply to halt the supply process at any stage.
Different pulse modulators which utilise different accumulation techniques including Marx Generators (MG), Magnetic Pulse Compressors (MPC), Pulse Forming Networks (PFN) and Multistage Blumlein Lines (MBL) are currently employed to supply a wide range of applications. Gas/Magnetic switching technologies (such as spark gap and hydrogen thyratron) have conventionally been used as switching devices in pulse modulator structures because of their high voltage ratings and considerably low rising times. However, they also suffer from serious drawbacks such as, their low efficiency, reliability and repetition rate, and also their short life span. Being bulky, heavy and expensive are the other disadvantages associated with these devices. Recently developed solid-state switching technology is an appropriate substitution for these switching devices due to the benefits they bring to the pulse supplies. Besides being compact, efficient, reasonable and reliable, and having a long life span, their high frequency switching skill allows repetitive operation of pulsed power supply. The main concerns in using solid-state transistors are the voltage rating and the rising time of available switches that, in some cases, cannot satisfy the application’s requirements. However, there are several power electronics configurations and techniques that make solid-state utilisation feasible for high voltage pulse generation. Therefore, the design and development of novel methods and topologies with higher efficiency and flexibility for pulsed power generators have been considered as the main scope of this research work. This aim is pursued through several innovative proposals that can be classified under the following two principal objectives.
• To innovate and develop novel solid-state based topologies for pulsed power generation
• To improve available technologies that have the potential to accommodate solid-state technology by revising, reconfiguring and adjusting their structure and control algorithms.
The quest to distinguish novel topologies for a proper pulsed power production was begun with a deep and through review of conventional pulse generators and useful power electronics topologies. As a result of this study, it appears that efficiency and flexibility are the most significant demands of plasma applications that have not been met by state-of-the-art methods. Many solid-state based configurations were considered and simulated in order to evaluate their potential to be utilised in the pulsed power area. Parts of this literature review are documented in Chapter 1 of this thesis.
Current source topologies demonstrate valuable advantages in supplying the loads with capacitive characteristics such as plasma applications. To investigate the influence of switching transients associated with solid-state devices on rise time of pulses, simulation based studies have been undertaken. A variable current source is considered to pump different current levels to a capacitive load, and it was evident that dissimilar dv/dts are produced at the output. Thereby, transient effects on pulse rising time are denied regarding the evidence acquired from this examination. A detailed report of this study is given in Chapter 6 of this thesis.
This study inspired the design of a solid-state based topology that take advantage of both current and voltage sources. A series of switch-resistor-capacitor units at the output splits the produced voltage to lower levels, so it can be shared by the switches. A smart but complicated switching strategy is also designed to discharge the residual energy after each supply cycle. To prevent reverse power flow and to reduce the complexity of the control algorithm in this system, the resistors in common paths of units are substituted with diode rectifiers (switch-diode-capacitor). This modification not only gives the feasibility of stopping the load supply process to the supplier at any stage (and consequently saving energy), but also enables the converter to operate in a two-stroke mode with asymmetrical capacitors. The components’ determination and exchanging energy calculations are accomplished with respect to application specifications and demands. Both topologies were simply modelled and simulation studies have been carried out with the simplified models. Experimental assessments were also executed on implemented hardware and the approaches verified the initial analysis. Reports on details of both converters are thoroughly discussed in Chapters 2 and 3 of the thesis.
Conventional MGs have been recently modified to use solid-state transistors (i.e. Insulated gate bipolar transistors) instead of magnetic/gas switching devices. Resistive insulators previously used in their structures are substituted by diode rectifiers to adjust MGs for a proper voltage sharing. However, despite utilizing solid-state technology in MGs configurations, further design and control amendments can still be made to achieve an improved performance with fewer components. Considering a number of charging techniques, resonant phenomenon is adopted in a proposal to charge the capacitors. In addition to charging the capacitors at twice the input voltage, triggering switches at the moment at which the conducted current through switches is zero significantly reduces the switching losses. Another configuration is also introduced in this research for Marx topology based on commutation circuits that use a current source to charge the capacitors. According to this design, diode-capacitor units, each including two Marx stages, are connected in cascade through solid-state devices and aggregate the voltages across the capacitors to produce a high voltage pulse. The polarity of voltage across one capacitor in each unit is reversed in an intermediate mode by connecting the commutation circuit to the capacitor. The insulation of input side from load side is provided in this topology by disconnecting the load from the current source during the supply process. Furthermore, the number of required fast switching devices in both designs is reduced to half of the number used in a conventional MG; they are replaced with slower switches (such as Thyristors) that need simpler driving modules. In addition, the contributing switches in discharging paths are decreased to half; this decrease leads to a reduction in conduction losses. Associated models are simulated, and hardware tests are performed to verify the validity of proposed topologies. Chapters 4, 5 and 7 of the thesis present all relevant analysis and approaches according to these topologies.
29
Oberdorf, Michael Craig. "Power losses and thermal modeling of a voltage source inverter." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2006. http://library.nps.navy.mil/uhtbin/hyperion/06Mar%5FOberdorf.pdf.
Abstract:
Thesis (M.S. in Electrical Engineering)--Naval Postgraduate School, March 2006.Thesis Advisor(s): Alexander Julian. "March 2006." Includes bibliographical references (p. 103-104). Also available online.
30
Darees, Danielle. "Contribution a l'etude d'associations monolithiques de composants mos et bipolaires : le thyristor a gachette isolee." Toulouse, INSA, 1986. http://www.theses.fr/1986ISAT0029.
Abstract:
Etude des composants de type "thyristor a gachette isolee" pour les applications en haute tension, forte puissance. On presente des associations monolithiques de composants mos et bipolaires, en precisant les modes possibles de declenchement. On propose une nouvelle approche: substituer une grille mos a la region de gachette des transistors classiques garantissant ainsi, a priori, les capacites bien superieures en tension et en courant. Une modelisation tres poussee des thyristors a commande isolee est effectuee. Conception et realisation d'un thyristor a gachette amplificatrice mos
31
Weisz, Mario. "Electrothermal device-to-circuit interactions for half THz SiGe∶C HBT technologies." Thesis, Bordeaux 1, 2013. http://www.theses.fr/2013BOR14909/document.
Abstract:
Ce travail concerne les transistors bipolaires à hétérogène TBH SiGe. En particulier, l'auto-échauffement des transistors unitaires et le couplage thermique avec leurs plus proches voisins périphériques sont caractérisés et modélisés. La rétroaction électrothermique intra- et inter-transistor est largement étudiée. En outre, l’impact des effets thermiques sur la performance de deux circuits analogiques est évalué. L'effet d'autoéchauffement est évalué par des mesures à basse fréquence et des mesures impulsionnelles DC et AC. L'auto-échauffement est diminué de manière significative en utilisant des petites largeurs d'impulsion. Ainsi la dépendance fréquentielle de l’autoéchauffementa été étudiée en utilisant les paramètres H et Y. De nouvelles structures de test ont été fabriqués pour mesurer l'effet de couplage. Les facteurs de couplage thermique ont été extraits à partir de mesures ainsi que par simulations thermiques 3D. Les résultats montrent que le couplage des dispositifs intra est très prononcé. Un nouvel élément du modèle de résistance thermique récursive ainsi que le modèle de couplage thermique a été inclus dans un simulateur de circuit commercial. Une simulation transitoire entièrement couplée d'un oscillateur en anneau de 218 transistors a été effectuée. Ainsi, un retard de porte record de 1.65ps est démontré. À la connaissance des auteurs, c'est le résultat le plus rapide pour une technologie bipolaire. Le rendement thermique d'un amplificateur de puissance à 60GHz réalisé avec un réseau multi-transistor ou avec un transistor à plusieurs doigts est évalué. La performance électrique du transistor multidoigt est dégradée en raison de l'effet de couplage thermique important entre les doigts de l'émetteur. Un bon accord est constaté entre les mesures et les simulations des circuits en utilisant des modèles de transistors avec le réseau de couplage thermique. Enfin, les perspectives sur l'utilisation des résultats sont donnéesThe power generate by modern silicon germanium (SiGe) heterojunction bipolar transistors (HBTs) can produce large thermal gradients across the silicon substrate. The device opering temperature modifies model parameters and can significantly affect circuit operation. This work characterizes and models self-heating and thermal coupling in SiGe HBTs. The self-heating effect is evaluated with low frequency and pulsed measurements. A novel pulse measurement system is presented that allows isothermal DC and RF measurements with 100ns pulses. Electrothermal intra- and inter-device feedback is extensively studied and the impact on the performance of two analog circuits is evaluated. Novel test structures are designed and fabricated to measure thermal coupling between single transistors (inter-device) as well as between the emitter stripes of a multi-finger transistor (intra-device). Thermal coupling factors are extracted from measurements and from 3D thermal simulations. Thermally coupled simulations of a ring oscillator (RO) with 218 transistors and of a 60GHz power amplifier (PA) are carried out. Current mode logic (CML) ROs are designed and measured. Layout optimizations lead to record gate delay of 1.65ps. The thermal performance of a 60GHz power amplifier is compared when realized with a multi-transistor array (MTA) and with a multi-finger trasistor (MFT). Finally, perspectives of this work within a CAD based circuit design environment are discussed
32
Liao, Li-Feng, and 廖麗鳳. "Structure Design of Trench Type Insulated-Gate Bipolar Transistors." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/44730090880226936125.
Abstract:
碩士國立臺灣科技大學
電子工程系
102
Power devices act as a switch to control the power delivered to the load. In this thesis, a novel trench-type insulated-gate bipolar transistor device has been proposed without p-n-p-n latch-up phenomenon, which shows better characteristics as compared with the conventional trench-gate power MOSFET. Moreover, by using the design of device structure and/or fabrication process to enhance the band-to-band tunneling or increase the electric field in drift region, the on-current of the trench-gate TFET-IGBT can be effectively improved. Accordingly, proper p+ source implantation profile and trench-gate dimension can be employed to optimize the electrical characteristics. As a result, the trench-gate TFET-IGBT is capable of causing smaller on-resistance than the conventional trench-gate power MOSFET, with avoiding the latch-up problem in the conventional trench-gate MOSFET-IGBT.
33
Huang, Tsung-Yi, and 黃宗義. "The Modeling of Insulated-Gate Bipolar Transistor." Thesis, 2001. http://ndltd.ncl.edu.tw/handle/92063066637999684532.
Abstract:
博士國立清華大學
電機工程學系
90
The Insulated-Gate Bipolar Transistor (IGBT) is a switching power device designed to overcome the large turn-off time of power bipolar transistor and the high on-state power loss of power MOSFET. The IGBT behaves as a bipolar transistor whose base current is supplied by a MOSFET. The disadvantages of the IGBT are the large turn-off time compared with the power MOSFEET and latch-up due to the inherent p/n/p/n structure. The IGBT has a wide-base region with the contact of the drain region of MOSFET and is operated under high -level injection. Because of this, the conventional BJT and MOSFET model are not adequate for the IGBT to predict the on-state and turn-off electrical characteristics accurately. Hence, a new model developed in this dissertation is proposed. This new IGBT model is developed using the ambipolar transport in wide-base BJT and MOSFET model. In addition, the iteration method is applied to the physically-based analytical equations because the device parameters affect each other mutually until the equilibrium is attained. Hence, an analytical method of analyzing IGBT current-voltage characteristics in terms of applied terminal voltage is established. This new analytical IGBT model is used to describe the on-state I-V characteristics, turn-off current and temperature effect on both latch-up criteria. Besides, this method is also used to extract the essential physical devices parameters of the model, such as the injected carrier concentrations, electron and hole current densities and current gains of BJT and they are also expressed as functions of applied voltages. The commercial process and device simulator are used to simulate the electrical characteristics in order to verify the accuracy of this analytical model. Moreover, The device edge effect and the spacing between cells are taken into consideration because these effects are important in the device fabrication. The guard-ring effect on I-V properties and breakdown, the parasitic JFET effect on I-V properties are inspected and analyzed using these tools. In summary, a new analytical model is developed for IGBT. It is shown that the new model gives accurately steady-state I-V properties, turn-off current and the temperature effect. Besides, the device''s parameters can be extracted using this method to predict the occurring of latch-up. The accuracy of his model is validated by comparison with the measured data in this dissertation.
34
Hsu, Chih Peng, and 徐志鵬. "Over-Current Protection in Insulated Gate Bipolar Transistor." Thesis, 2002. http://ndltd.ncl.edu.tw/handle/02132889220473826364.
35
Lin, Wen-Pin, and 林文斌. "Design and Analysis of Insulated Gate Bipolar Transistor." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/53850712307253639302.
Abstract:
碩士義守大學
電子工程學系
88
Insulated-Gate Bipolar Transistor(IGBT) has superior characteristics and has substituted power BJT as an important modern power semiconductor device. However, when the turn-on current reaches critical point, the parasitic thyristor will be triggered, and the gate control is lost (i.e. latch-up effects). When IGBT switches off, the large excess minority carriers in the N-drift region will recover to the equilibrium conditions through recombination, and this process causes tail-current problems, and the turn-off speed becomes very slow. But the most serious problem is that the standard and accurate SPICE models of IGBT have not been well established. Therefore, to design an integrated circuit with IGBT becomes very difficult. Thus in this thesis, an analytical model for the steady-state and transient behaviors of IGBT are presented first to extract SPICE parameters. Then the physics-based two-dimension IGBT SPICE models are implemented. The bypass IGBT and complemented IGBT structures are proposed to improve the latch-up and slow switching-off speed. The models for these structures have been established, and the SPICE simulation results are verified by comparison with experimental results and MEDICI simulation results.
36
Shen, Tzer-Min, and 沈澤民. "Simulation and Design of Insulated Gate Bipolar Transistor." Thesis, 1995. http://ndltd.ncl.edu.tw/handle/60344232620745150902.
Abstract:
碩士國立成功大學
電機工程研究所
83
Insulated Gate Bipolar Transistor, as the new-generation power switch device, has the characteristics of low saturation voltage, low on-resistance and low switch loss. Particularly, IGBT contain an extremely high potential for industry application with the of motor driver, uninterrupted power supply system, invertor and inductuin heating technology. However, because of the shortage of traditional IGBT due to the latchup occuring, low turn-on current density and high on- resistance, a new gate structure IGBT is presented to improve its electrical characteristics. In this a two-dimensional numerical simulation is used to analysis the electrical characteristics of IGBT. In the simulation process, self- consistent method is used to solve the Poisson's equation, current contiunity equation various models and heat flow In the first part of this thesis, the characteristics od DC and latchup mechanism are analysis. The effect of th body region doping concentration are demonstrated to get the optimal doping concentration. In the second part of this thesis, the influence V-groove strcuture on IGBT is analysis. In the case of the structre, the beakdown voltage of these devices is influenced ue the existence of very high electric fields at the bottom of the V-groove. On the pther hand, the U-notch structure can enhance characteristics. Moreover, transient analysis is used to compare V-groove and U-notch structure switch characteristics.
37
謝鎧鴻HSIEH, KAI-HUNG, and 謝鎧鴻. "Insulated Gate Bipolar Transistor Temperature Effect and Measurement." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/3c9857.
Abstract:
碩士明新科技大學
電子工程系碩士班
106
Insulated Gate Bipolar Transistor (IGBT) is capable of providing high power applications allowing wide varieties of application, such as industrial equipments, consumer end electronics, and even military weapon applications. IGBT possesses properties of high impedance input and high current. The authors design the layout for IGBT, and place the order on fabricating the power discrete, which is measured via Agilent 4065 instead of curve tracer. The author sticks aluminum foil with silver glue to the back of the wafer such that the drain on the back of the wafer can be applied with a bias. The characteristics curves are then obtained. The electrical performances can be concluded and analyzed through the measured data. Different wafers correspond to different process conditions. In a wafer, there are many discrete power devices with three different kinds of scales of Gates and Sources. One then tells which scale of design and what process condition can yield better electrical performances according to the measured data. The measuring data at different temperatures is also provided to understand the temperature effects. Finally, the conclusions may convince the designer in which process or size to choose for manufacturing.
38
Jiang, Ren-You, and 江任祐. "Insulated-gate bipolar transistor triggered by junctionless MOSFET." Thesis, 2019. http://ndltd.ncl.edu.tw/handle/26egka.
Abstract:
碩士國立臺灣科技大學
電子工程系
107
A lateral insulated-gate bipolar transistor power device triggered by junctionless MOSFET has been proposed. For the conventional IGBT, owing to the conductivity modulation by turning on the pn diode, the large series resistance in the drift can be effectively reduced. However, a major problem with this kind of power device is latch-up because of a parasitic pnpn-thyristor in the device. In order to solve the latch-up problem, IGBT that is without p-well region would not form pnpn structure, and the resultant triggering FET is a junctionless MOSFET instead of a conventional MOSFET. However, the junctionless MOSFET will cause deterioration of breakdown characteristics. For improving the blocking voltage of the device, a trench region is formed to thin the channel region of the junctionless MOSFET. In addition, the junctionless MOSFET can show a lower on-state resistance than the conventional MOSFET. As a result, as compared to the IGBT triggered by a conventional MOSFET, the IGBT triggered by a junctionless MOSFET can resolve the latch-up problem and cause much better on-state characteristics, without obvious degradation of breakdown characteristics.
39
Gupta, Kaustubh. "Design, Simulation and Modeling of Insulated Gate Bipolar Transistor." Thesis, 2013. http://hdl.handle.net/1969.1/151277.
Abstract:
The market for Insulated Gate Bipolar Transistor (IGBT) is growing and there is a need for techniques to improve the design, modeling and simulation of IGBT. In this thesis, we first developed a new method to optimize the layout and dimensions of IGBT circuits based on device simulation and combinatorial optimization. Our method leads to the optimal IGBT layout consisting of hexagons, which is 6 % more efficient in terms of performance (current per unit area) over that of squares, and up to 80 % more efficient than rectangles. We also explored several techniques to reduce the time used for device simulation. In particular, we developed an accurate Verilog-A description based on the Hefner model. For transient simulation, the time used by SPICE on the Verilog-A model is only 1/10000 of that used by device simulation on the device structure. The SPICE results, though contain some inaccuracies in the details, match device simulation in the general trend. Due to the effectiveness and efficiency of our methods, we propose their application in designing better power electronic circuits and shorter turn-around time.
40
Chen, Lihua. "Intelligent gate drive for high power MOSFETs and IGBTs." Diss., 2008.
Abstract:
Thesis (Ph. D.)--Michigan State University. Dept. of Electrical and Computer Engineering, 2008.Title from PDF t.p. (viewed on July 23, 2009) Includes bibliographical references (p. 243-252). Also issued in print.
41
Tsou, Ming-Ying, and 鄒明穎. "Study on the Device Characteristics of Lateral Insulated Gate Bipolar Transistor." Thesis, 2003. http://ndltd.ncl.edu.tw/handle/31108934472976615219.
Abstract:
碩士國立交通大學
電機與控制工程系
91
By MEDICITM TCAD, the comprehensive studies on the off state breakdown capability and on state characteristics of LIGBT are investigated in this thesis. We establish an MEDICITM analysis model suitable for actual process for modulating the parameters to simulate. Regarding the off state breakdown capability, this study make a detailed analysis of the affection on the breakdown voltage with respect to the various concentration, thickness of epitaxy layer, and the drift region length. Moreover, a design for achieving 300V off state breakdown voltage is presented here where a 20μm of the drift region length is used, and the Reduced Surface Field (RESURF) technology is employed. The on state resistance of LIGBT is also studied through various parameters. It is found that the LIGBT on state resistance is somewhat independent of the concentration of drift region, but depends on the channel length. Further, since latch-up effect can burn out the LIGBT device, this study analyzes the latch-up current values under various parameters, and consequently proposes the improved design.
42
Wang, Yi-Ting, and 王怡婷. "A Design and Analysis of 600V Trench Gate Reverse Conducting Insulated Gate Bipolar Transistor." Thesis, 2012. http://ndltd.ncl.edu.tw/handle/47047701468172285686.
Abstract:
碩士國立中央大學
電機工程研究所
100
Most of the development trend of electronic products has always been to achieve high performance and multi-function by consuming more power. In the energy industry equipment used by semiconductor, power semiconductors, the proportion of over 50%. Power semiconductors are widely used in the fields of home appliances, computers, automotive and railway. Since these applications are expected to expand the popularity of the use of power semiconductors has risen, the power semiconductor market will expand year by year growth. With crude oil prices rising year by year, the timing of the development of energy-saving products and energy products in the world is becoming increasingly mature, full propulsion of electric vehicles to replace petrol cars. In power semiconductors, IGBT market scale expanding background is an increase in demand for hybrid and electric cars. Recently, car manufacturers competing yield hybrid plan, and intends to replace the original car''s gasoline hybrid in one fell swoop. Thus more visible IGBT there is enormous potential in the future market development. In recent years, because semiconductor components were integrated and the IGBT modules which paralleled diode were used in circuit applications, Reverse Conducting- IGBT that could combine the IGBT and Diode structure were developed, in order to save the circuit from additional parts. In this paper, I will use the Thin Wafer technology and Field-Sop structure to design 600V RC-IGBT. In addition, I will do a series of research and discussion for how to achieve low on-state voltage, high breakdown voltage and improve the reverse recovery characteristics of RC-IGBT, designing to optimize RC-IGBT. Through the Silvaco software ATHENA and ATLAS simulate component process method and conduct electrical analysis and design, showed the RC-IGBT that has Carried Stored N layer can reach more than 600 V withstand voltage. Compared with the RC-IGBT without Carried Stored N layer , it can effectively improve the on-state voltage about 13% and improve built-in diode reverse recovery performance, that the reverse peak current decreased approximately 0.4A and the reverse recovery charge can reduce more than 17%.
43
Bo-YiLee and 李柏毅. "Simulation and Fabrication of Insulated-Gate-Bipolar-Transistor with surface termination design." Thesis, 2014. http://ndltd.ncl.edu.tw/handle/zv4y3y.
Abstract:
碩士國立成功大學
電機工程學系
102
Insulation-Gate Bipolar Transistor（IGBT）,which is developed for power devices using medium-power and medium-frequency. It integrates the structures of Power Bipolar Transistor and Power MOSFET, and has better performance in many applications. With the dimension of semiconductors scaling down, achieving a desired active performance becomes a challenge. The aim of this study is to keep the device active performance and improve the breakdown voltage by optimizing the Guard-ring. In this paper, we use T-CAD simulation software (Silvaco) to achieve an Insulated Gate Bipolar Transistor (IGBT) design with high breakdown voltage and current. We change the surface structure to enhance the breakdown voltage. Under the same implant and annealing parameters, these two structures have the same forward characteristic, while the new structure breakdown voltage (1000V) is three times higher than the conventional structure (300V). If the guard-ring implant parameters are altered, the highest breakdown voltage (1120V) can be achieved with a 〖1X10〗^14 ions/cm^2 implant concentration for the Guard-rings. The distance between the first Guard-ring and the main junction (P-body) is found to be 21um. Finally, we change the P-body implant concentration and layout and found that when the cell region is decreased by 2.3%, the active performance will be reduced by 10%.
44
Hsu, Che-Chih, and 許哲誌. "Characteristics simulation, device modeling and reliability test of Insulated Gate Bipolar Transistor." Thesis, 2010. http://ndltd.ncl.edu.tw/handle/62044903281318128093.
Abstract:
碩士國立臺灣大學
電子工程學研究所
98
Transistor scaling down has been performed in driving CMOS performance improvement for past two decades. By approaching the physical limits, “more than Moore” is a new path to the next decades and application requirement and costumer needs will determine which technology is best suited. Furthermore, as the global warming and environmental protection issue getting much attention from the governments around the world, the power device is becoming more important for the future green energy application. IGBT (as a bipolar device) is a structure which could break the Si limit. We especially focus on the IGBT for solar cell inverters. So, the blocking voltage is necessary to be greater than 630V. In this study, we introduce the background and motivation for the investigation of IGBT. A modified method to predict the breakdown voltage and lateral IGBT simulations are implemented to design a lateral IGBT for inverter in integration form. Then, we use a basic experimental sub-circuit to model our simulation result based on Hspice and HiSIM model. Reliability and temperature effect are important issues in solar inverter, so we do the reliability test with commercial IGBT component and discuss the results.
45
Tsai, Ying-Chieh, and 蔡英杰. "Design and Application of a High Voltage Lateral Insulated Gate Bipolar Transistor." Thesis, 2017. http://ndltd.ncl.edu.tw/handle/3r393u.
Abstract:
博士國立清華大學
電子工程研究所
105
Based on the progress of the high voltage process, power integrated circuit has more and more widely applications. The demand for power components is also increasing. Insulated-gate bipolar transistor (IGBT) is one of the best candidates for a high current, low on-resistance and high breakdown voltage application. However, to integrate the IGBT with other low-voltage control circuits requires a lateral architecture, an LIGBT, within the silicon wafer. However, the conduction of the LIGBT parasitic bipolar transistor may cause a serious substrate current. So that such an integrated circuit will face the risk of latch-up effect. In order to suppress the substrate current without using the high cost and heat dissipation troubled silicon-on-insulator (SOI) technology, a junction isolation technology (JI) design is proposed and verified in this dissertation that uses a 0.5μm high voltage process technology and an epitaxy technology. A junction isolation lateral IGBT (JI-LIGBT) is proposed to suppress the substrate current with breakdown voltage greater than 700V. In addition, the quasi-vertical double diffusion metal-oxide-semiconductor field effect transistor (QVDMOSFET) is included to improve the saturation current. In order to make the application more extensive, we designed a 200V JI-LIGBT with an N-type buried layer (BL) and multi-channel structure to more suppress the substrate current. Measurement results show that this structure has a lower substrate current and its operating voltage is higher than 160V. Since power integrated circuits are often operated in harsh environments. The high temperature DC characteristics of a high-voltage bulk Si lateral insulated-gate bipolar transistor in junction isolation (JI-LIGBT) technology is studied intensively in this dissertation. The current density distribution in the off-state at different temperatures of three types of device structure is compared. By using the Quasi-vertical DMOSFET (QVDMOS or multi-channel, MC) structure, the electron injection from the channel into the n-drift region is significantly enhanced, and the current density is improved. In addition, by extending the p-top layer to the NPN anode not only improves the breakdown voltage but also reduces the substrate current as well as ensures high temperature stability.
46
Hsieh, Chi-Ju, and 謝奇儒. "Composite Insulated Gate Bipolar Transistor Device With Series Depletion-mode Poly-Si TFT." Thesis, 2011. http://ndltd.ncl.edu.tw/handle/b27yut.
Abstract:
碩士國立臺灣科技大學
光電工程研究所
99
In recent years, following the introducing of state of the art flat panel displays and communication products, demands for power devices have risen substantially. In keeping with the trend of integration circuit, conventional vertical device needs to be changed to lateral structure to make it possible for the integration of power devices and low voltage circuit on the same chip. The available used lateral power device is thin film lateral Insulated Gate Bipolar Transistor (TLIGBT) device, which is used to silicon on insulator (SOI) platform. Formation of thin film lateral insulated gate bipolar transistor (IGBT), there is an important issue on latch-up. So, we will expect that latch-up problem could be resolved by using composite insulated gate bipolar transistor with series depletion-mode poly-Si TFT. In this thesis, the composite insulated gate bipolar transistor with series depletion-mode poly-Si TFT was studied by using Tsuprem-4 and MEDICI simulation. The anode of thin film lateral IGBT acts as the anode of the composited structure, and the source of depletion-mode poly-Si TFT acts as the source of the composited structure. In addition, the IGBT and depletion-mode poly-Si TFT gate would be shorted both the two structures. For electrical characteristic, example: breakdown voltage and on-state electric current, there are no considerable difference between the IGBT and composited structure which are found. Most important thing, the composited structure that depletion-mode poly-Si TFT successfully limits large electric current occurrence. The latch-up problem is successfully suppressed.
47
Lin, Wei-Jye, and 林偉捷. "Analysis of Switching Speed Improvement in Insulated Gate Bipolar Transistor (IGBT) By Electron Irradiation." Thesis, 2000. http://ndltd.ncl.edu.tw/handle/54388837044773115923.
Abstract:
碩士國立清華大學
電子工程研究所
88
Electron Irradiation is a technique used to control the Insulated Gate Bipolar Transistor (IGBT) switching performance. It can reduce the minority carrier lifetime and increase the recombination rate of the excess minority carriers by generating the atomic displacement and trap centers in the drift region of the IGBTs. However, electron irradiation induces undesired effects on other parameters, such as forward voltage drop and threshold voltage. In this thesis, we design a series of electron irradiation dosage to optimize the steady states and switching performance of IGBTs considering various design parameters. Then, the model of predicting turn-off time is created by two-dimensional simulator MEDICI and circuit simulator HSPICE. Finally, We have successful fabricated IGBT with 600V breakdown voltage, 10A on-current, 2.49V on-state voltage drop at 10A, and high speed, 365nsec turn-off time.
48
Lin, Yang-You, and 林揚祐. "Lateral trench-type insulated-gate bipolar transistor triggered by using tunneling-field-effect structure." Thesis, 2015. http://ndltd.ncl.edu.tw/handle/52173970303839533036.
Abstract:
碩士國立臺灣科技大學
電子工程系
103
The lateral insulated-gate bipolar transistor power device has been proposed that a smaller on-state voltage drop compared with metal-oxide-semiconductor field-effect transistor power device and tunneling-field-effect transistor power device. Because the P+-anode/N- drift junction of the device turn on, the large series resistance in the drift region can be effectively reduced. In this thesis, the results of different gate-positions of planar TFET-IGBT have been discussed, there is a trade-off between the electric field in P+-cathode/N- drift junction and N- drift region. Furthermore, planar TFET-IGBT with removal of P-well and ion implant to form n-pocket can significantly enhance the band-to-band tunneling near the P+-cathode/N- drift junction, and the on-current of the device would be obviously increased. Nevertheless, a large electric field in the depletion region of P+-cathode/N- drift junction would result in breakdown voltage degradation. Therefore, the optimization of the characteristics of planar TFET-IGBT requires a trade-off between forward current and reverse blocking voltage. For improving the blocking voltage of the device, trench-type TFET-IGBT be studied with better breakdown characteristic. It is found that the usage of n-pocket can enhance the electric field of trench-type TFET-IGBT not only near the P+-cathode/N- drift junction but also in N- drift region. As a result, the on-state capability and blocking voltage characteristic of trench-type TFET-IGBT can be obviously improved compared with those of MOS-IGBT.
49
Chen, Chien-Chun, and 陳建君. "Thermal Fatigue Life and Reliability Evaluation of Insulated Gate Bipolar Transistor under JEDEC-Specified Thermal Cycling." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/4qv422.
Abstract:
碩士國立臺灣大學
機械工程學研究所
106
In recent years, new-energy vehicles and wind power industry have developed rapidly. To provide high power-density and current for those applications, the reliability of insulated gate bipolar transistor (IGBT) modules have also become an important issue. In fact, when IGBT modules are in use, their solder layers including chip solder and baseplate solder are frequently damaged by thermal fatigue and eventually result in failures of modules. The JEDEC Solid State Technology Association has therefore issued standard thermal-cycling test to guarantee the reliability of IGBT modules. This study uses finite element method to simulate the mechanics behavior of a certain type of IGBT module under JEDEC-specified thermal-cyclic load. Special attention is paid to solder layer of the IGBT module. After plastic strain range of the chip solder and baseplate solder are found, Coffin-Manson model is employed for predicting the thermal fatigue life of the IGBT module. It is worth mentioning that most studies of this kind are limited to finding a fixed value of life for a certain type of IGBT module, which may not reflect the fact that, when being tested or in real use, the fatigue lives of IGBT modules have certain degrees of discrepancy. No further reliability information such as life distribution, failure probability and failure rate can be obtained either. To overcome the shortcoming, this study incorporates uncertainties of geometric dimensions and material properties into the aforementioned FEM simulation by Monte-Carlo method, which results in fatigue life distribution for the IGBT module. Statistical tests are then carried out, and the reliability information such as mean time to failure (MTTF), failure probability and failure rate function is obtained. The results show that baseplate solder is the key failure component of the IGBT module and, after considering the uncertainties mentioned above, the fatigue life of the studied IGBT modules under JEDEC-specified thermal cyclic load are between 70.98 and 90.79 cycles. Through statistical tests, it is found that 3-parameter Weibull distribution is suitable to describe the life distribution. For the studied IGBT modules, its minimum life is 67.76, scale parameter is 13.19 and the shape parameter is 2.89. The above result reflects that parameter uncertainty has a certain degree of influence on the life dispersion and reliability of the IGBT module.
50
LO, KUO-CHIN, and 羅國晉. "The Temperatures Effects of the Electrical Characteristic Performances of Drain Current versus Gate bias on Insulated Gate Bipolar Transistor Equivalently Combining both Mosfet and Bipolar Devices." Thesis, 2018. http://ndltd.ncl.edu.tw/handle/a78jea.
Abstract:
碩士明新科技大學
電子工程系碩士班
107
Insulated Gate Bipolar Transistor (IGBT) is a power discrete with both benefits; one of them is high input impedance of MOSFET and the other is high current gain of Bipolar. Indeed, IGBT does have the capability of higher power as compared to other power discrete devices, especially on the current performance. To deeply understand the characteristics of fabricated discrete devices, authors measure the electrical characteristics curves under different temperatures. Even though one is unable to find a tester with enough high current measuring capability, it is still expected to inspect and predict certain crucial performances. Ones thus uses Agilent 6645 to measure some of the characteristics curves of IGBT, and wishfully understand the electrical performances corresponding to the provided data. In addition, the process-correlated electrical properties are also intrigued and taken into account. The process splits are designed to observe the depth and the scope of the diffusion-region. Once the implant dose and the thermal budget are determined, then the corresponding electrical characteristics are thus manifested through the measurements. By the judgement, the optimal process flow associated with the different sizes of poly-silicon gate can thus be decided as well. Keywords: IGBT, MOSFET, BJT, Power IC