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Dissertations / Theses on the topic 'Insulator-to-metal transition'

Author: Grafiati

Published: 10 March 2023

Last updated: 31 July 2025

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1

Madaras, Scott. "Insulator To Metal Transition Dynamics Of Vanadium Dioxide Thin Films." W&M ScholarWorks, 2020. https://scholarworks.wm.edu/etd/1616444322.

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Vanadium Dioxide (VO2) is a strongly correlated material which has been studied for many decades. VO2 has been proposed for uses in technologies such as optical modulators, IR modulators, optical switches and Mott memory devices. These technologies are taking advantage of VO2’s insulator to metal transition (IMT) and the corresponding changes to the optical and material properties. The insulator to metal transition in VO2 can be accessed by thermal heating, applied electric field, or ultra-fast photo induced processes. Recently, thin films of VO2 grown on Titanium Dioxide doped with Niobium (T

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2

Proskuryakov, Yuri. "Interactions, localisation and the metal to insulator transition in two-dimensional semiconductor systems." Thesis, University of Exeter, 2003. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.288367.

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3

Liu, Mengkun. "Ultrafast far-infrared studies of Vanadates - multiple routes for an insulator to metal transition." Thesis, Boston University, 2012. https://hdl.handle.net/2144/12484.

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Thesis (Ph.D.)--Boston University PLEASE NOTE: Boston University Libraries did not receive an Authorization To Manage form for this thesis or dissertation. It is therefore not openly accessible, though it may be available by request. If you are the author or principal advisor of this work and would like to request open access for it, please contact us at open-help@bu.edu. Thank you.<br>The metal insulator transition in vanadates has been studied for decades and yet new discoveries still spring up revealing new physics, especially among two of the most studied members: Vanadium sesquioxide (V2

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4

Spitzig, Alyson. "The importance of Joule heating on the voltage-triggered insulator-to-metal transition in VO₂." Thesis, University of British Columbia, 2017. http://hdl.handle.net/2429/62808.

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The large change in resistivity in the material VO₂ has attracted considerable attention since it was first discovered in 1959. Recently, the ability to trigger the insulator-to-metal transition (IMT) with a strong electric field has been observed, but there has been debate about whether the transition is due to field-effects. We apply a voltage bias across a VO₂ thin film via a conductive atomic force microscope (CAFM) tip and measure the resultant current. We observe the IMT as a jump in the measured current in the IV curves. We fit the IV curves to the Poole-Frenkel (PF) conduction mechanis

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5

Weerasinghe, Hasitha C. "Electrical characterization of metal-to-insulator transition in iron silicide thin films on sillicone substrates." [Tampa, Fla] : University of South Florida, 2006. http://purl.fcla.edu/usf/dc/et/SFE0001677.

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6

Watson, Deborah Lee. "Quantum interference effects in the magnetoresistance of semiconductor structures near the metal to insulator transition." Thesis, University of Exeter, 1999. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.286547.

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7

O'Neal, Jared. "A Numerical Study of a Disorder-driven 2D Mott Insulator-to-Metal Quantum Phase Transition." The Ohio State University, 2017. http://rave.ohiolink.edu/etdc/view?acc_num=osu1492701913534985.

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8

Read, Daniel Edward. "Electrical and magnetic properties of n-Cd(_1-x)Mn(_x) Te close to the metal-insulator transition." Thesis, Durham University, 2001. http://etheses.dur.ac.uk/3783/.

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Electrical transport and magnetic measurements have been made on n-Cd(_1-x)Mn(_x) Te (0.047 < X < 0.197) for samples doped with hi or In,Al. Results are presented for measurements made as a function of temperature (40 mK < T < 300 K), applied magnetic field (0 T < B < 6 T) and photogenerated carrier density. Low field magnetic susceptibility measurements have identified a transition from a paramagnetic phase to a spin glass phase at low temperatures. The measured temperature dependence of the magnetic susceptibility is consistent with a cluster glass model. Measurements of the spin glass freez

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9

Humbert, Vincent. "Etude des états fondamentaux dans des systèmes supraconducteurs désordonnés de dimension 2." Thesis, Université Paris-Saclay (ComUE), 2016. http://www.theses.fr/2016SACLS149/document.

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Un matériau 3D, initialement supraconducteur, peut avoir différents états fondamentaux dépendamment de son degré de désordre : supraconducteur, métallique ou isolant. A dimension réduite (2D), la localisation d’Anderson interdit théoriquement tout état métallique. La modification du désordre induit alors une Transition directe Supraconducteur-Isolant (TSI). La présence de fortes interactions électroniques, non prises en compte dans les théories conventionnelles, pourrait cependant remettre en cause ce paradigme et laisser émerger des états métalliques 2D, complexifiant l’image généralement adm

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10

Golalikhani, Maryam. "Structure and electronic properties of atomically-layered ultrathin nickelate films." Diss., Temple University Libraries, 2015. http://cdm16002.contentdm.oclc.org/cdm/ref/collection/p245801coll10/id/353844.

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Physics<br>Ph.D.<br>This work presents a study on stoichiometry and structure in perovskite-type oxide thin films and investigates the role of growth–induced defects on the properties of materials. It also explores the possibility to grow thin films with properties close or similar to the ideal bulk parent compound. A novel approach to the growth of thin films, atomic layer-by-layer (ALL) laser molecular beam epitaxy (MBE) using separate oxide targets is introduced to better control the assembly of each atomic layer and to improve interface perfection and stoichiometry. It also is a way to lay

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11

Seidemann, Johanna. "Iontronic - Étude de dispositifs à effet de champ à base des techniques de grilles liquides ioniques." Thesis, Université Grenoble Alpes (ComUE), 2017. http://www.theses.fr/2017GREAY075/document.

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Les liquides ioniques sont des fluides non volatiles, constitués de cations et d’anions, qui sont conducteurs ioniques, isolants électriques, et peuvent avoir des valeurs de capacité très élevées. Ces liquides sont susceptibles non seulement de remplacer les électrolytes solides, mais également de susciter des champs électriques intenses (>SI{10}{megavoltpercentimetre}) au sein d’une couche dite double couche électronique (electric double layer, EDL) à l’interface entre le liquide et le matériau sur lequel il est déposé. Ceci conduit à une injection de porteurs de charge bidimensionelle ave

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12

Meling, Artur. "Scattering of vibrationally excited NO from vanadium dioxide." Doctoral thesis, Niedersächsische Staats- und Universitätsbibliothek Göttingen, 2020. http://hdl.handle.net/21.11130/00-1735-0000-0005-12F9-E.

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13

Masunaga, Sueli Hatsumi. "Preparação e caracterização de manganitas (La,Pr)CaMnO." Universidade de São Paulo, 2005. http://www.teses.usp.br/teses/disponiveis/43/43134/tde-04012011-123031/.

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Amostras policristalinas de La(5/8-y)Pr(y)Ca(3/8)MnO(3); 0 y 0.625; foram produzidas pelo método da mistura estequiométrica de óxidos e tratadas termicamente ao ar a 1400 oC. As amostras foram caracterizadas através de medidas de difração de raios-X, resistividade elétrica rho(T), susceptibilidade magnética chi(T) e magnetorresistividade rho(T, H = 50 kOe). Os resultados das análises dos diagramas de raios-X indicaram que os materiais são de fase única e que houve uma substituição efetiva de La por Pr no sítio A ao longo da série. Medidas de rho(T) e chi(T) revelaram que a temperatura d

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14

Lange, Matthias Michael [Verfasser], and Dieter [Akademischer Betreuer] Kölle. "A High-Resolution Polarizing Microscope for Cryogenic Imaging : Development and Application to Investigations on Twin Walls in SrTiO3 and the Metal-Insulator Transition in V2O3 / Matthias Michael Lange ; Betreuer: Dieter Kölle." Tübingen : Universitätsbibliothek Tübingen, 2018. http://d-nb.info/1174583703/34.

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15

Sirjita, Eduard-Nicolae. "Elaboration and correlation of structure/optical and electrical properties of phase transition oxide materials (VO2, W-doped VO2 and NbO2)." Electronic Thesis or Diss., Limoges, 2024. https://aurore.unilim.fr/theses/nxfile/default/cfd27744-856a-4645-a183-cbf2ff31ef34/blobholder:0/2024LIMO0005.pdf.

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Cette thèse vise la réalisation et la caractérisation structurale, optique et électrique de couches minces de matériaux oxydes ayant des propriétés de transition isolant-métal (MIT), plus particulièrement des oxydes de vanadium (VO2 et VO2 dopé avec W) et du dioxyde de niobium (NbO2). Le dépôt de ces couches minces a été effectué par pulvérisation magnétron réactive dans une atmosphère Ar/ O2. Le processus d'optimisation des films minces a permis d'obtenir des informations précieuses sur les effets du processus de fabrication sur les caractéristiques structurelles, optiques et électriques. En

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16

Doyle, Suzanne Martha. "Phase transitions in low dimensional materials close to the metal-insulator boundary." Thesis, University of Bristol, 1990. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.358783.

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17

Nájera, Ocampo Oscar. "Study of the dimer Hubbard Model within Dynamical Mean Field Theory and its application to VO₂." Thesis, Université Paris-Saclay (ComUE), 2017. http://www.theses.fr/2017SACLS462/document.

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J'étudie en détail la solution d'un modèle simplifié d'électrons fortement corrélés, à savoir le modèle de Hubbard dimérisé. Ce modèle est la réalisation la plus simple d'un problème de cluster DMFT. Je fournis une description détaillée des solutions dans une région de coexistence où l'on trouve deux états (méta) stables des équations DMFT, l'un métallique et l'autre isolant. De plus, je décris en détail comment ces états disparaissent à leurs lignes critiques respectives. Je clarifie le rôle clé joué par la corrélation intra-dimère, qui agit ici en complément des corrélations de Coulomb.Je pa

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18

Le, Bourdais David. "Microcapteurs de pression à base de manganites épitaxiées." Thesis, Paris 11, 2015. http://www.theses.fr/2015PA112021/document.

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Les oxydes sont des matériaux complexes possédant une physique riche et toujours au centre de nombreuses recherches. Parmi ces oxydes, les manganites ont retenu notre attention car ils présentent une transition métal-isolant abrupte en température, générant un très fort coefficient en température en conditions d’environnement standards. L’objectif de ce travail est de démontrer que ce fort coefficient peut être exploité pour l’amélioration des performances des jauges de pression de type Pirani qui subissent un certain essoufflement dans leur développement. La voie menant à l’aboutissement d’un

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19

FRANCESCHINI, PAOLO. "NOVEL SCHEMES FOR ULTRAFAST MANIPULATION OF QUANTUM MATERIALS." Doctoral thesis, Università Cattolica del Sacro Cuore, 2022. http://hdl.handle.net/10280/111822.

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La possibilità di controllare le proprietà elettroniche on-demand su una scala di tempo ultraveloce rappresenta una delle sfide più intriganti verso la realizzazione di dispositivi fotonici ed elettronici di nuova generazione. Stimolata da questo, negli ultimi decenni la ricerca scientifica ha concentrato la propria attenzione su diverse piattaforme a stato solido. Tra tutte, nanostrutture dielettriche (e metamateriali) e materiali correlati si presentano come i più promettenti candidati per la realizzazione di dispositivi dotati di nuove funzionalità. Al di là delle caratteristiche specifiche

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20

Amow, Gisele. "Structural and physical properties of the vacancy-doped systems R¦1¦-¦x TiO (R = Nd for 0.00 < or equal to x < or equal 0.33 and Sm for 0.00 < or equal to x < or equal to 0.17), an investigation of metal-insulator transitions." Thesis, National Library of Canada = Bibliothèque nationale du Canada, 1999. http://www.collectionscanada.ca/obj/s4/f2/dsk1/tape7/PQDD_0019/NQ50976.pdf.

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21

Santos, Ana Filipa Alves Rodrigues dos. "Investigation of VO2 Metal-to-Insulator Transition for application in memory devices." Master's thesis, 2020. http://hdl.handle.net/10362/129483.

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Vanadium oxides have been extensively studied due to their multiple forms. In particular, VO2 presents a reversible and ultrafast metal-to-insulator transition (MIT) occurring at ~68ºC that changes the material from monoclinic to tetragonal rutile structure. An external input (thermal, chemical or electronic) can trigger this transition, changing it from a high resistance state to a low resistance state, meaning that it can be used as an electronic switch. In this project, the optimized conditions to produce VO2 thin films (~200 nm of thickness) were studied and films were deposited by e

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22

Kądzielawa, Andrzej. "First-principle approach to electronic states and metal-insulator transition in selected correlated model systems." Praca doktorska, 2015. https://ruj.uj.edu.pl/xmlui/handle/item/278054.

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23

Kübler, Carl [Verfasser]. "Femtosecond terahertz studies of many body correlations : from ultrafast phonon plasmon dynamics to an insulator metal transition / vorgelegt von Carl Kübler." 2007. http://d-nb.info/986197246/34.

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24

"Metal-insulator Transition And Cross Over From Coherent Band-like Transport To Incoherent Transport In Ferrimagnetic Epitaxial Spinel Nico2o4 Thin Films." Tulane University, 2014.

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25

Teubert, Jörg [Verfasser]. "Interaction between extended and localized electronic states in the region of the metal to insulator transition in semiconductor alloys / vorgelegt von Jörg Teubert." 2009. http://d-nb.info/993324347/34.

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26

Chaitanya, Lekshmi I. "In-situ Synthesis Of AxWO3(A=Na,K), SrMoO3, La1-xSrxVO3, LaNi1-x(Mn3Co)xO3 And La1-xCexNiO3 Thin Films By Pulsed Laser Deposition: Study Of Electrical Conductivity And Metal To Insulator Transition." Thesis, 2004. https://etd.iisc.ac.in/handle/2005/1362.

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27

Chaitanya, Lekshmi I. "In-situ Synthesis Of AxWO3(A=Na,K), SrMoO3, La1-xSrxVO3, LaNi1-x(Mn3Co)xO3 And La1-xCexNiO3 Thin Films By Pulsed Laser Deposition: Study Of Electrical Conductivity And Metal To Insulator Transition." Thesis, 2004. http://etd.iisc.ernet.in/handle/2005/1362.

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28

Messina, Troy Christopher. "Steric effects in the metallic-mirror to transparent-insulator transition in YHx." Thesis, 2002. http://wwwlib.umi.com/cr/utexas/fullcit?p3110658.

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29

Shamin, Saquib. "Electrical Transport in Si:P and Ge:P δ-doped Systems". Thesis, 2015. http://etd.iisc.ac.in/handle/2005/4002.

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Doped semiconductor systems have for decades provided an excellent platform to study novel concepts in solid state physics such as quantum hall eﬀect, metal-to-insulator transition (MIT), weak localization and many body interaction eﬀects. Doped Si, in particular and doped Ge has been studied extensively to study MIT as a function of dopant concentration or uniaxial stress. Spin transport phenomena have also been probed in bulk doped Si. All the previous studies involved bulk doped semiconductors where the dopants are spread through the bulk of the material. However spatial confinement of dopa

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30

Shamin, Saquib. "Electrical Transport in Si:P and Ge:P δ-doped Systems". Thesis, 2015. http://etd.iisc.ernet.in/2005/3915.

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Doped semiconductor systems have for decades provided an excellent platform to study novel concepts in solid state physics such as quantum hall eﬀect, metal-to-insulator transition (MIT), weak localization and many body interaction eﬀects. Doped Si, in particular and doped Ge has been studied extensively to study MIT as a function of dopant concentration or uniaxial stress. Spin transport phenomena have also been probed in bulk doped Si. All the previous studies involved bulk doped semiconductors where the dopants are spread through the bulk of the material. However spatial confinement of dopa

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31

TANZI, LUCA. "One-dimensional disordered bosons from weak to strong interactions: the Bose glass." Doctoral thesis, 2014. http://hdl.handle.net/2158/850906.

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32

Münzenberg, Markus. "X-ray magnetic circular dichroism in iron/rare-earth multilayers and the impact of modifications of the rare earth's electronic structure." Doctoral thesis, 2000. http://hdl.handle.net/11858/00-1735-0000-0006-B411-2.

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