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1

Stavrinidou, Eleni, Roger Gabrielsson, Eliot Gomez, et al. "Electronic plants." Science Advances 1, no. 10 (2015): e1501136. http://dx.doi.org/10.1126/sciadv.1501136.

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The roots, stems, leaves, and vascular circuitry of higher plants are responsible for conveying the chemical signals that regulate growth and functions. From a certain perspective, these features are analogous to the contacts, interconnections, devices, and wires of discrete and integrated electronic circuits. Although many attempts have been made to augment plant function with electroactive materials, plants’ “circuitry” has never been directly merged with electronics. We report analog and digital organic electronic circuits and devices manufactured in living plants. The four key components o
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2

Kazior, Thomas E. "Beyond CMOS: heterogeneous integration of III–V devices, RF MEMS and other dissimilar materials/devices with Si CMOS to create intelligent microsystems." Philosophical Transactions of the Royal Society A: Mathematical, Physical and Engineering Sciences 372, no. 2012 (2014): 20130105. http://dx.doi.org/10.1098/rsta.2013.0105.

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Advances in silicon technology continue to revolutionize micro-/nano-electronics. However, Si cannot do everything, and devices/components based on other materials systems are required. What is the best way to integrate these dissimilar materials and to enhance the capabilities of Si, thereby continuing the micro-/nano-electronics revolution? In this paper, I review different approaches to heterogeneously integrate dissimilar materials with Si complementary metal oxide semiconductor (CMOS) technology. In particular, I summarize results on the successful integration of III–V electronic devices
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3

Hart, B. L. "Book Review: Electronics with Digital and Analog Integrated Circuits." International Journal of Electrical Engineering Education 22, no. 4 (1985): 381–82. http://dx.doi.org/10.1177/002072098502200429.

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4

Desyllas, PeterLL, and Finbar Naven. "4730316 Digital integrated circuits." Microelectronics Reliability 28, no. 6 (1988): 1000. http://dx.doi.org/10.1016/0026-2714(88)90310-1.

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Desyllas, PeterLL, and Finbar Naven. "4730317 Digital integrated circuits." Microelectronics Reliability 28, no. 6 (1988): 1000. http://dx.doi.org/10.1016/0026-2714(88)90311-3.

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6

Mishra, Brijendra, Vivek Singh Kushwah, and Rishi Sharma. "MODELING OF HYBRID MOS FOR THE IMPLEMENTATION OF SWITCHED CAPACITOR FILTER USING SINGLE ELECTRON TRANSISTOR." International Journal of Engineering Technologies and Management Research 5, no. 2 (2020): 294–300. http://dx.doi.org/10.29121/ijetmr.v5.i2.2018.659.

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In digital integrated circuit architectures, transistors serve as circuit switches to charge and discharge capacitors to the required logic voltage levels. A transistor is a three terminal semiconductor device used to amplify and switch electronic signals and electrical power. It has been observed that the Scaling down of electronic device sizes has been the fundamental strategy for improving the performance of ultra-large-scale integrated circuits (ULSIs). Metaloxide-semiconductor field-effect transistors (MOSFETs) have been the most prevalent electron devices for ULSI applications. A better
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7

FRITZ, KARL E., BARBARA A. RANDALL, GREGG J. FOKKEN, et al. "HIGH-SPEED, LOW-POWER DIGITAL AND ANALOG CIRCUITS IMPLEMENTED IN IBM SiGe BiCMOS TECHNOLOGY." International Journal of High Speed Electronics and Systems 13, no. 01 (2003): 221–37. http://dx.doi.org/10.1142/s0129156403001582.

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Under the auspices of Defense Advanced Research Project Agency's Microsystems Technology Office (DARPA/MTO) Low Power Electronics Program, the Mayo Foundation Special Purpose Processor Development Group is exploring ways to reduce circuit power consumption, while maintaining or increasing functionality, for existing military systems. Applications presently being studied include all-digital radar receivers, electronic warfare receivers, and other types of digital signal processors. One of the integrated circuit technologies currently under investigation to support such military systems is the I
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Park, Won Ho, Tamer Ali, and C. K. Ken Yang. "Analysis of Refrigeration Requirements of Digital Processors in Subambient Temperatures." Journal of Microelectronics and Electronic Packaging 7, no. 4 (2010): 197–204. http://dx.doi.org/10.4071/imaps.257.

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The total power consumption for high-performance computing systems is a serious concern for designers of integrated circuits and systems. It is well known that cooling the operating temperature results in reduced electronic power and/or speed gains. However, total power dissipation includes both electronic power and the refrigeration power. This study explores the optimal operating temperatures and the amount of total power reduction at subambient temperatures. This paper presents a realistic system-level model that includes both the electronic and the refrigeration systems. Analysis using the
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9

Gavrilenkov, Sergey I., Elizaveta O. Petrenko, and Evgeny V. Arbuzov. "A Digital Device for Automatic Checking of Homework Assignments in the Digital Circuits Course." ITM Web of Conferences 35 (2020): 04009. http://dx.doi.org/10.1051/itmconf/20203504009.

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This paper considers a digital device for automatic checking of homework assignments in the digital circuits course. The assignment is to make a digital circuit corresponding to a given logical expression; the circuit is comprised of elementary logic gates. The process of manual testing the built circuit is very labor-intensive because checking a circuit with N inputs variables requires checking the correctness of the output variable for 2N cases. We propose automating this pro-cess with a special digital device. The device is comprised of a microcontroller connected to the circuit tested. The
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10

Young, R. A. R., David T. Clark, Jennifer D. Cormack, et al. "High Temperature Digital and Analogue Integrated Circuits in Silicon Carbide." Materials Science Forum 740-742 (January 2013): 1065–68. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1065.

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Silicon Carbide devices are capable of operating as a semiconductor at high temperatures and this capability is being exploited today in discrete power components, bringing system advantages such as reduced cooling requirements [1]. Therefore there is an emerging need for control ICs mounted on the same modules and being capable of operating at the same temperatures. In addition, several application areas are pushing electronics to higher temperatures, particularly sensors and interface devices required for aero engines and in deep hydrocarbon and geothermal drilling. This paper discusses a de
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Alexandru, Mihaela, Viorel Banu, Miguel Vellvehi, Philippe Godignon, and José Millán. "Design of Digital Electronics for High Temperature Using Basic Logic Gates Made of 4H-SiC MESFETs." Materials Science Forum 711 (January 2012): 104–8. http://dx.doi.org/10.4028/www.scientific.net/msf.711.104.

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– 4H-SiC MESFET transistors are very attractive devices for high temperature application and communications. The JFET and MESFET transistors have a promising potential for integrated circuits able to operate at high temperature and harsh radiation environments, due to the superior electrical, mechanical and chemical proprieties of 4H-SiC. Progresses in the manufacturing of high quality SiC substrates open the possibility to new circuit applications.
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12

Huang, Tsung-Ching, Ting Lei, Leilai Shao, et al. "Process Design Kit and Design Automation for Flexible Hybrid Electronics." Journal of Microelectronics and Electronic Packaging 16, no. 3 (2019): 117–23. http://dx.doi.org/10.4071/imaps.925849.

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Abstract High-performance low-cost flexible hybrid electronics (FHE) are desirable for applications such as internet of things and wearable electronics. Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for high-performance FHE because of its high carrier mobility, superior mechanical flexibility, and material compatibility with low-cost printing and solution processes. Flexible sensors and peripheral CNT-TFT circuits, such as decoders, drivers, and sense amplifiers, can be printed and hybrid-integrated with thinned (<50 μm) silicon chips on soft, thin, and flexi
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13

Carta, Fabio, Htay Hlaing, Hassan Edrees, Shyuan Yang, Mingoo Seok, and Ioannis Kymissis. "Co-development of complementary technology and modified-CPL family for organic digital integrated circuits." MRS Proceedings 1795 (2015): 19–25. http://dx.doi.org/10.1557/opl.2015.564.

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ABSTRACTWe present a novel logic family alternative to classic CMOS logic and its experimental demonstration for digital application of organic electronics. The proposed logic family is a modified version of the complementary pass-transistor logic (mCPL), which allows use of a stronger transistor (in our case the p-FET) to provide more of the current required to switch the capacitance in the device. We report the integration and characterization of this new class of gates and compare them with the equivalent CMOS structures. The characterization of inverters shows improved tolerance to process
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14

Chiolino, N., A. M. Francis, J. Holmes, and M. Barlow. "Digital Logic Synthesis for 470 Celsius Silicon Carbide Electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2018, HiTEC (2018): 000064–70. http://dx.doi.org/10.4071/2380-4491-2018-hiten-000064.

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Abstract Advancements in Silicon Carbide (SiC) digital integrated circuit (IC) design have enabled the ability to design complex, dense, digital blocks. Because of the large number of transistors, these complex digital designs make the time and risk of hand-crafted digital design, which has been the norm for SiC, too costly and risky. For large scale integrated digital circuits, computer aided design (CAD) tools are necessary, specifically the use of automatic synthesis, rule-based placement and signal routing software. The tools are used in progression as a design flow and are necessary for t
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15

Alon, Elad, and Mark Horowitz. "Integrated Regulation for Energy-Efficient Digital Circuits." IEEE Journal of Solid-State Circuits 43, no. 8 (2008): 1795–807. http://dx.doi.org/10.1109/jssc.2008.925403.

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16

Yuan, J. S., and W. Kuang. "Teaching Asynchronous Design in Digital Integrated Circuits." IEEE Transactions on Education 47, no. 3 (2004): 397–404. http://dx.doi.org/10.1109/te.2004.825923.

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17

Oberg, Oliver T., Quentin P. Herr, Alexander G. Ioannidis, and Anna Y. Herr. "Integrated Power Divider for Superconducting Digital Circuits." IEEE Transactions on Applied Superconductivity 21, no. 3 (2011): 571–74. http://dx.doi.org/10.1109/tasc.2010.2086415.

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18

LONG, STEPHEN I. "HIGH SPEED DIGITAL CIRCUIT TECHNOLOGY." International Journal of High Speed Electronics and Systems 06, no. 01 (1995): 163–210. http://dx.doi.org/10.1142/s0129156495000055.

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The performance of high speed digital integrated circuits, defined here as those requiring operation at high clock frequency, is generally more sensitive to material properties and process techniques than ICs used at lower frequencies. Obtaining high speed and low power concurrently is especially challenging. Circuit architectures must be selected for the device and application appropriately. This paper presents simple models for high speed digital IC performance and applies these to the FET and bipolar transistor. Heterojunction devices are compared with those using single or binary materials
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19

Merrett, R. P. "High-speed gallium arsenide for digital integrated circuits." Electronics and Power 33, no. 4 (1987): 241. http://dx.doi.org/10.1049/ep.1987.0162.

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20

Pons, M., F. Martorell, X. Aragones, F. Moll, and A. Rubio. "Ground bounce modelling for digital gigascale integrated circuits." International Journal of Electronics 95, no. 3 (2008): 227–37. http://dx.doi.org/10.1080/00207210701827921.

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21

BAHL, INDER J. "MONOLITHIC MICROWAVE INTEGRATED CIRCUITS BASED ON GaAs MESFET TECHNOLOGY." International Journal of High Speed Electronics and Systems 06, no. 01 (1995): 91–124. http://dx.doi.org/10.1142/s0129156495000031.

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Advanced military microwave systems are demanding increased integration, reliability, radiation hardness, compact size and lower cost when produced in large volume, whereas the microwave commercial market, including wireless communications, mandates low cost circuits. Monolithic Microwave Integrated Circuit (MMIC) technology provides an economically viable approach to meeting these needs. In this paper the design considerations for several types of MMICs and their performance status are presented. Multi-function integrated circuits that advance the MMIC technology are described, including inte
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22

Jiménez, Alejandro Dueñas, and Francisco Jiménez Hernández. "Confirming the Signal Integrity in Transmission of Digital Signals on Microstrip Straight Circuits via the Eye Diagrams." JOURNAL OF ADVANCES IN PHYSICS 5, no. 1 (2014): 737–41. http://dx.doi.org/10.24297/jap.v5i1.1972.

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Because of the high volume of processing, transmission, and information storage, electronic systems presently requires faster clock speeds tosynchronizethe integrated circuits. Presently the “speeds” on the connections of a printed circuit board (PCB) are in the order of the GHz. At these frequencies the behavior of the interconnects are more like that of a transmission line, and hence distortion, delay, and phase shift- effects caused by phenomena like cross talk, ringing and over shot are present and may be undesirable for the performance of a circuit or system.Some of these phrases were
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23

Fang, Kun, Rui Zhang, Tami Isaacs-Smith, R. Wayne Johnson, Emad Andarawis, and Alexey Vert. "Thin Film Multichip Packaging for High Temperature Digital Electronics." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, HITEN (2011): 000039–45. http://dx.doi.org/10.4071/hiten-paper1-rwjohnson.

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Digital silicon carbide integrated circuits provide enhanced functionality for electronics in geothermal, aircraft and other high temperature applications. A multilayer thin film substrate technology has been developed to interconnect multiple SiC devices along with passive components. The conductor is vacuum deposited Ti/Ti:W/Au followed by an electroplated Au. A PECVD silicon nitride is used for the interlayer dielectric. Adhesion testing of the conductor and the dielectric was performed as deposited and after aging at 320°C. The electrical characteristics of the dielectric as a function of
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24

Gupta, Deepnarayan, Saad Sarwana, Dmitri Kirichenko, et al. "Digital Output Data Links From Superconductor Integrated Circuits." IEEE Transactions on Applied Superconductivity 29, no. 5 (2019): 1–8. http://dx.doi.org/10.1109/tasc.2019.2910469.

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25

Falkner, A. H. "The Measurement of Force and Torque Using Capacitor Devices." Proceedings of the Institution of Mechanical Engineers, Part C: Journal of Mechanical Engineering Science 206, no. 6 (1992): 385–90. http://dx.doi.org/10.1243/pime_proc_1992_206_145_02.

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This paper concerns the use of electrical capacity in the measurement of force and torque as an alternative to conventional strain gauges. It has been established that for some requirements mechanical configurations can be designed with integrated capacitor bridges which combine a good performance with low cost and compactness. Simple electronic circuitry incorporating multiplexing has been developed and used to drive multi-axis devices. Examples include a configuration for measuring the three torques at a point. Work on an integrated circuit shows the possibility of positioning the electronic
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26

Newcomb, R. W. "Digital integrated circuits analysis and design - Book Reviews." IEEE Circuits and Systems Magazine 4, no. 4 (2004): 34–40. http://dx.doi.org/10.1109/mcas.2004.1371588.

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27

GHARPUREY, RANJIT, and SHAHRZAD NARAGHI. "SELF-INDUCED NOISE IN INTEGRATED CIRCUITS." International Journal of High Speed Electronics and Systems 15, no. 02 (2005): 277–95. http://dx.doi.org/10.1142/s012915640500320x.

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Circuits with diverse electrical behavior are often placed in close physical proximity in order to achieve high-levels of on-chip integration. The activity of certain types of circuits can generate harmful interference, and degrade the performance of the system through electromagnetic coupling. Considerable effort in system-on-a-chip implementations is in fact related to technology and architectural considerations for minimizing this interference. This is especially the case in systems that have exacting requirements on the dynamic range such as those for wireless applications. In this paper,
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Holmes, Jim, A. Matthew Francis, Ian Getreu, Matthew Barlow, Affan Abbasi, and H. Alan Mantooth. "Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application." Journal of Microelectronics and Electronic Packaging 13, no. 4 (2016): 143–54. http://dx.doi.org/10.4071/imaps.527.

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In the last decade, significant effort has been expended toward the development of reliable, high-temperature integrated circuits. Designs based on a variety of active semiconductor devices including junction field-effect transistors and metal-oxide-semiconductor (MOS) field-effect transistors have been pursued and demonstrated. More recently, advances in low-power complementary MOS (CMOS) devices have enabled the development of highly integrated digital, analog, and mixed-signal integrated circuits. The results of elevated temperature testing (as high as 500°C) of several building block circu
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G.W.A.D. "Gallium arsenide digital integrated circuits a systems perspective." Microelectronics Reliability 30, no. 1 (1990): 183–84. http://dx.doi.org/10.1016/0026-2714(90)90028-l.

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Sofeoul-Al-Mamun, Md, Mohammad Badrul Alam Miah, and Fuyad Al Masud. "A Novel Design and Implementation of 8-3 Encoder Using Quantum-dot Cellular Automata (QCA) Technology." European Scientific Journal, ESJ 13, no. 15 (2017): 254. http://dx.doi.org/10.19044/esj.2017.v13n15p254.

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In recent years Quantum-dot Cellular Automata (QCA) has been considered one of the emerging nano-technology for future generation digital circuits and systems. QCA technology is a promising alternative to Complementary Metal Oxide Semiconductor (CMOS) technology. Thus, QCA offers a novel electronics paradigm for information processing and communication system. It has attractive features such as faster speed, higher scale integration, higher switching frequency, smaller size and low power consumption compared to the transistor based technology. It is projected as a promising nanotechnology for
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31

NICODIMUS, R. A. "Active Shield Circuit for Digital Noise Suppression in Mixed-Signal Integrated Circuits." IEICE Transactions on Fundamentals of Electronics, Communications and Computer Sciences E88-A, no. 2 (2005): 438–43. http://dx.doi.org/10.1093/ietfec/e88-a.2.438.

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32

Meerasha, M. A., and K. Pandiyan. "Photonic configurable logic block for digital photonic integrated circuits." Electronics Letters 56, no. 21 (2020): 1130–33. http://dx.doi.org/10.1049/el.2020.2014.

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33

Riches, S. T., C. Warn, K. Cannon, G. Rickard, L. Stoica, and C. Johnston. "Design and Assembly of High Temperature Distributed Aero-engine Control System Demonstrator." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (2014): 000285–90. http://dx.doi.org/10.4071/hitec-tha12.

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This paper covers the development of a distributed high temperature electronics demonstrator for integration with sensor elements to provide digital outputs that can be used by the FADEC (Full Authority Digital Electronic Control) system or the EHMS (Engine Health Monitoring System) on an aircraft engine. This distributed electronics demonstrator eliminates the need for the FADEC or EHMS to process the sensor signal, which will assist in making the overall system more accurate and efficient in processing only digital signals. This will offer weight savings in cables, harnesses and connector pi
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34

Spira, Steffen, Kurt Blau, Reiner Thomä, and Matthias A. Hein. "Agile multi-beam front-end for 5G mm-wave measurements." International Journal of Microwave and Wireless Technologies 13, no. 7 (2021): 740–50. http://dx.doi.org/10.1017/s1759078721000842.

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AbstractThe 5th generation new radio (5G NR) standards create both enormous challenges and potential to address the spatio-spectral-temporal agility of wireless transmission. In the framework of a research unit at TU Ilmenau, various concepts were studied, including both approaches toward integrated circuits and distributed receiver front-ends (FEs). We report here on the latter approach, aiming at the proof-of-principle of the constituting FEs suitable for later modular extension. A millimeter-wave agile multi-beam FE with an integrated 4 by 1 antenna array for 5G wireless communications was
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35

Kalra, Shruti, та A. B. Bhattacharyya. "An Analytical Study Of Temperature Dependence of Scaled CMOS Digital Circuits Using α-Power MOSFET Model". Journal of Integrated Circuits and Systems 11, № 1 (2016): 57–68. http://dx.doi.org/10.29292/jics.v11i1.430.

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Aggressive technological scaling continues to drive ultra-large-scale-integrated chips to higher clock speed. This causes large power consumption leading to considerable thermal generation and on-chip temperature gradient. Though much of the research has been focused on low power design, thermal issues still persist and need attention for enhanced integrated circuit reliability. The present paper outlines a methodology for a first hand estimating effect of temperature on basic CMOS building blocks at ultra deep submicron technology nodes utilizing modified α-power law based MOSFET model. The g
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SAPONARA, SERGIO, TOMMASO BALDETTI, LUCA FANUCCI, EMILIO VOLPI, and FRANCESCO D'ASCOLI. "DESIGN OF AN INTEGRATED SCANNING MICROMIRROR DRIVER IN BCD TECHNOLOGY." Journal of Circuits, Systems and Computers 20, no. 04 (2011): 781–99. http://dx.doi.org/10.1142/s0218126611007608.

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The paper presents the design and characterization of a smart IC driver for MEMS scanning micromirrors. The driver integrates in 0.18 μm BCD technology the cascade of the following circuits: resistor-string DAC circuitry for direct interface to a host digital processing unit, a voltage buffer between the DAC and the High-Voltage (HV) stage, and a fully-differential HV amplifier with programmable output common mode. A couple of the designed DACs permits to generate, starting from digital samples, low-voltage analog stimuli. This signal amplified up to 25 V by the HV stage provides the electrost
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37

Abecassis, Úrsula, Davies de Lima Monteiro, Luciana Salles, Carlos de Moraes Cruz, and Pablo Agra Belmonte. "Impact of CMOS Pixel and Electronic Circuitry in the Performance of a Hartmann-Shack Wavefront Sensor." Sensors 18, no. 10 (2018): 3282. http://dx.doi.org/10.3390/s18103282.

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This work presents a numerical simulation of a Hartmann-Shack wavefront sensor (WFS) that assesses the impact of integrated electronic circuitry on the sensor performance, by evaluating a full detection chain encompassing wavefront sampling, photodetection, electronic circuitry and wavefront reconstruction. This platform links dedicated C algorithms for WFS to a SPICE circuit simulator for integrated electronics. The complete codes can be easily replaced in order to represent different detection or reconstruction methods, while the circuit simulator employs reliable models of either off-the-sh
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Dimov, B., D. Balashov, M. Khabipov, et al. "Superconductive passive phase shifter for integrated RSFQ digital circuits." Superconductor Science and Technology 20, no. 11 (2007): S332—S335. http://dx.doi.org/10.1088/0953-2048/20/11/s07.

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Muttaqin, Adharul, Zainul Abidin, Raden Arief Setyawan, and Itsna Az Zahra. "Development of advanced automated test equipment for digital system by using FPGA." Indonesian Journal of Electrical Engineering and Computer Science 15, no. 2 (2019): 661. http://dx.doi.org/10.11591/ijeecs.v15.i2.pp661-670.

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One of the fundamental devices in electronics, Integrated Circuit (IC), is usually applied in more complex devices. Before the IC is used, it has to pass some tests to guarantee that its function is in accordance with the specifications. Automated Test Equipment (ATE) is used to test many electronics devices, including ICs. Nowadays, with the rapid advance in electronics technology, the industry will need more advanced ATE to fulfill customers demand. One of the applicative solutions is improvement and integration of a standalone module in commercial ATE owned by the company. ASL 1000 Test Sys
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Y. N., Sharath Kumar, and Dinesha P. "TFI-FTS: An efficient transient fault injection and fault-tolerant system for asynchronous circuits on FPGA platform." International Journal of Electrical and Computer Engineering (IJECE) 11, no. 3 (2021): 2704. http://dx.doi.org/10.11591/ijece.v11i3.pp2704-2710.

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Designing VLSI digital circuits is challenging tasks because of testing the circuits concerning design time. The reliability and productivity of digital integrated circuits are primarily affected by the defects in the manufacturing process or systems. If the defects are more in the systems, which leads the fault in the systems. The fault tolerant systems are necessary to overcome the faults in the VLSI digital circuits. In this research article, an asynchronous circuits based an effective transient fault injection (TFI) and fault tolerant system (FTS) are modelled. The TFI system generates the
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Evmorfopoulos, N. E., and J. N. Avaritsiotis. "An Adaptive Digital Fuzzy Architecture for Application-Specific Integrated Circuits." Active and Passive Electronic Components 25, no. 4 (2002): 289–306. http://dx.doi.org/10.1080/08827510214374.

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A generic fuzzy logic system implementation in digital hardware is presented in this paper. The architecture developed is oriented to Application-Specific Integrated Circuits (ASICs), and its functionality is demonstrated through a typical ASIC for a simple control application. Furthermore, a distributed adaptation scheme is proposed for real-time environments. Performance/area tradeoffs for VLSI implementation are also discussed.
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42

Daoming, Ke, Feng Yaolan, Tong Qinyi, and Ke Xiaoli. "Transient characteristic analysis of high temperature CMOS digital integrated circuits." Journal of Electronics (China) 11, no. 2 (1994): 104–15. http://dx.doi.org/10.1007/bf02778359.

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43

Watson, Jeff, and Maithil Pachchigar. "A Low Power, Precision SAR Analog to Digital Converter for High Temperature Applications." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, HITEC (2014): 000053–57. http://dx.doi.org/10.4071/hitec-ta26.

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A growing number of industries are calling for low power electronics that operate reliably at temperatures of 175°C and higher. Many of these applications require a precision data acquisition signal chain in order to digitize analog data so that it can be collected and processed. Designing circuits that meet these needs can be very challenging, requiring a data converter that can deliver high performance and reliability in these harsh environments. There are currently a very limited number of integrated circuits commercially available that are specified for operation at these temperatures, and
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Eslami, Mohammad, Behnam Ghavami, Mohsen Raji, and Ali Mahani. "A survey on fault injection methods of digital integrated circuits." Integration 71 (March 2020): 154–63. http://dx.doi.org/10.1016/j.vlsi.2019.11.006.

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45

Daves, Glenn G. "Trends in Automotive Packaging." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (2014): 001818–50. http://dx.doi.org/10.4071/2014dpc-keynote_th1_daves.

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The long-term trend in automobiles has been increasing electronics content over time. This trend is expected to continue and drives diverse functional, form factor, and reliability requirements. These requirements, in turn, are leading to changes in the package types selected and the performance specifications of the packages used for automotive electronics. Several examples will be given. This abstract covers the development of a distributed high temperature electronics demonstrator for integration with sensor elements to provide digital outputs that can be used by the FADEC (Full Authority D
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46

Jess, J. A. G., K. Kalafala, S. R. Naidu, R. H. J. M. Otten, and C. Visweswariah. "Statistical Timing for Parametric Yield Prediction of Digital Integrated Circuits." IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems 25, no. 11 (2006): 2376–92. http://dx.doi.org/10.1109/tcad.2006.881332.

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47

Hartmann, C., and M. Wieberneit. "Investigation on BIST assisted failure analysis on digital integrated circuits." Microelectronics Reliability 50, no. 9-11 (2010): 1464–68. http://dx.doi.org/10.1016/j.microrel.2010.07.148.

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48

Mishra, Vishwas, Abhishek Kumar, Shobhit Tyagi, Neha Verma, and Divya Mishra. "CENSORSHIP OF LEAKAGE PARAMETERS OF A FINFET BASED SCHMITT TRIGGER AT NANO-METER REGIME." International Journal of Students' Research in Technology & Management 8, no. 2 (2020): 01–05. http://dx.doi.org/10.18510/ijsrtm.2020.821.

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Purpose: Recently FinFET technology has gained a lot of attention because of its superior fabrication process that is very similar to the fabrication of a conventional transistor. FinFETs unique feature as well as the potential applications make it a strong contender for the low power chip designs. Research is in full swing to use FinFET in analog circuits like Schmitt trigger, sensors, OPAMP and digital logic. The realization of the FinFET based circuits predicts that it is possible to broaden the concept of Moore’s law without unstoppable scaling of CMOS devices.
 Methodology: This work
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Мустафаев, Гасан Абакарович, Арслан Гасанович Мустафаев, Валерий Александрович Панченко, and Наталья Васильевна Черкесова. "DEVELOPMENT OF A LOGICAL ELEMENT BASED ON POLYPHENYLENE MOLECULES." Physical and Chemical Aspects of the Study of Clusters, Nanostructures and Nanomaterials, no. 12() (December 15, 2020): 662–71. http://dx.doi.org/10.26456/pcascnn/2020.12.662.

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Большое энергопотребление изделий интегральной электроники и дорогостоящие методы их производства, делает масштабирование кремниевых полупроводниковых устройств до размеров менее 50 нм непростой технологической и конструкторской задачей. В последнее время были достигнуты значительные успехи в разработке и исследовании изделий молекулярной электроники: молекулярных проводов, молекулярных диодов, изготовленных из отдельных молекул. Также были получены хорошие результаты в технологии формирования надежного электрического контакта с электропроводящими молекулами. Достижения в области наноэлектрони
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LIANG, CHUNGUANG, QINGMING ZENG, ZHENCHANG MA, MINGWEN YUAN, and JINPING AO. "GaAs HIGH SPEED DEVICES AND CIRCUITS." International Journal of High Speed Electronics and Systems 07, no. 03 (1996): 447–61. http://dx.doi.org/10.1142/s0129156496000256.

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This paper presents the R&D of GaAs-based high speed devices and circuits at the Hebei Semiconductor Research Institute (HSRI) in China. It is concerned with low noise and medium power GaAs-MESFET MMIC and monolithic laser diode driver and preamplifier for 2.4 Gb/s fiber communication application, GaAs-based high speed digital circuits like single and dual modulus frequency divider, digital/analog convertor, shift register, HEMT and HBT integrated circuits.
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