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Journal articles on the topic 'Integrated circuits Optical communications'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

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1

Dong, Po, Young-Kai Chen, Guang-Hua Duan, and David T. Neilson. "Silicon photonic devices and integrated circuits." Nanophotonics 3, no. 4-5 (2014): 215–28. http://dx.doi.org/10.1515/nanoph-2013-0023.

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AbstractSilicon photonic devices and integrated circuits have undergone rapid and significant progresses during the last decade, transitioning from research topics in universities to product development in corporations. Silicon photonics is anticipated to be a disruptive optical technology for data communications, with applications such as intra-chip interconnects, short-reach communications in datacenters and supercomputers, and long-haul optical transmissions. Bell Labs, as the research organization of Alcatel-Lucent, a network system vendor, has an optimal position to identify the full pote

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2

Heck, Martijn J. R. "Highly integrated optical phased arrays: photonic integrated circuits for optical beam shaping and beam steering." Nanophotonics 6, no. 1 (2017): 93–107. http://dx.doi.org/10.1515/nanoph-2015-0152.

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AbstractTechnologies for efficient generation and fast scanning of narrow free-space laser beams find major applications in three-dimensional (3D) imaging and mapping, like Lidar for remote sensing and navigation, and secure free-space optical communications. The ultimate goal for such a system is to reduce its size, weight, and power consumption, so that it can be mounted on, e.g. drones and autonomous cars. Moreover, beam scanning should ideally be done at video frame rates, something that is beyond the capabilities of current opto-mechanical systems. Photonic integrated circuit (PIC) techno

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3

Li, Y. P., and C. H. Henry. "Silica-based optical integrated circuits." IEE Proceedings - Optoelectronics 143, no. 5 (1996): 263–80. http://dx.doi.org/10.1049/ip-opt:19960840.

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4

Meister, Stefan, Bülent Franke, Hans Joachim Eichler, et al. "Photonic Integrated Circuits for Optical Communication." Optik & Photonik 7, no. 2 (2012): 59–62. http://dx.doi.org/10.1002/opph.201290052.

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5

Rogers, D. L. "GaAs opto-electronic integrated circuits for high speed optical communications." Microelectronic Engineering 15, no. 1-4 (1991): 679–83. http://dx.doi.org/10.1016/0167-9317(91)90310-a.

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6

Yamaguchi, K., H. Kitasagami, M. Motegi, et al. "400 Mbit/s Optical Regenerator Integrated Circuits." IEEE Journal on Selected Areas in Communications 4, no. 1 (1986): 184–91. http://dx.doi.org/10.1109/jsac.1986.1146303.

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7

Koshiba, Masanori. "Design and simulation of optical integrated circuits." Electronics and Communications in Japan (Part II: Electronics) 77, no. 11 (1994): 15–24. http://dx.doi.org/10.1002/ecjb.4420771102.

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8

Ferreira, André, João Torres, Maria Martins, and Antonio Baptista. "Tactical Communications between Military Vehicles." European Journal of Applied Physics 3, no. 1 (2021): 13–23. http://dx.doi.org/10.24018/ejphysics.2021.3.1.42.

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The increasing evolution and development of telecommunications as well as the need for wider bandwidths to comply with the users’ needs, has led to the development of the so-called free space optical communications. The advantages of optical communications in comparison to radio frequency communications draw interest for certain military applications. This paper describes the simulation, development and implementation of an optical communication system which integrates the various functional blocks of the optical emitter and the optical receiver and presents some theoretical consideratio

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9

BAHL, INDER J. "MONOLITHIC MICROWAVE INTEGRATED CIRCUITS BASED ON GaAs MESFET TECHNOLOGY." International Journal of High Speed Electronics and Systems 06, no. 01 (1995): 91–124. http://dx.doi.org/10.1142/s0129156495000031.

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Advanced military microwave systems are demanding increased integration, reliability, radiation hardness, compact size and lower cost when produced in large volume, whereas the microwave commercial market, including wireless communications, mandates low cost circuits. Monolithic Microwave Integrated Circuit (MMIC) technology provides an economically viable approach to meeting these needs. In this paper the design considerations for several types of MMICs and their performance status are presented. Multi-function integrated circuits that advance the MMIC technology are described, including inte

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10

Chen, Luis, Avantika Sohdi, John E. Bowers, Luke Theogarajan, Jon Roth, and Greg Fish. "Electronic and photonic integrated circuits for fast data center optical circuit switches." IEEE Communications Magazine 51, no. 9 (2013): 53–59. http://dx.doi.org/10.1109/mcom.2013.6588650.

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11

SWARTZ, ROBERT G. "PERFORMANCE AT THE EDGE: GALLIUM ARSENIDE AND SILICON ICs FOR OPTICAL ELECTRONICS." International Journal of High Speed Electronics and Systems 02, no. 03 (1991): 147–62. http://dx.doi.org/10.1142/s0129156491000077.

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Compound semiconductor technology is rapidly entering the mainstream, and is quickly finding its way into consumer applications where high performance is paramount. But silicon integrated circuit technology is evolving up the performance curve, and CMOS in particular is consuming ever more market share. Nowhere is this contest more clearly evident than in optical communications. Here applications demand performance ranging from a few hundreds of megahertz to multi-gigahertz, from circuits containing anywhere from tens to tens of thousands of devices. This paper reviews the high performance ele

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12

Soref, Richard. "Reconfigurable Integrated Optoelectronics." Advances in OptoElectronics 2011 (May 4, 2011): 1–15. http://dx.doi.org/10.1155/2011/627802.

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Integrated optics today is based upon chips of Si and InP. The future of this chip industry is probably contained in the thrust towards optoelectronic integrated circuits (OEICs) and photonic integrated circuits (PICs) manufactured in a high-volume foundry. We believe that reconfigurable OEICs and PICs, known as ROEICs and RPICs, constitute the ultimate embodiment of integrated photonics. This paper shows that any ROEIC-on-a-chip can be decomposed into photonic modules, some of them fixed and some of them changeable in function. Reconfiguration is provided by electrical control signals to the

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13

Svidzinsky, K. K. "Silicon-based optical integrated circuits for terabit communication networks." Quantum Electronics 33, no. 8 (2003): 699–703. http://dx.doi.org/10.1070/qe2003v033n08abeh002481.

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14

Nagatani, Munehiko, and Hideyuki Nosaka. "High-performance compound-semiconductor integrated circuits for advanced digital coherent optical communications systems." IEICE Electronics Express 13, no. 18 (2016): 20162003. http://dx.doi.org/10.1587/elex.13.20162003.

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15

Coffa, Salvatore, and Leonid Tsybeskov. "Silicon-Based Optoelectronics." MRS Bulletin 23, no. 4 (1998): 16–19. http://dx.doi.org/10.1557/s0883769400030219.

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The enormous progress of communication technologies in the last years has increased the demand for efficient and low-cost optoelectronic functions. For several present and future applications, photonic materials—in which light can be generated, guided, modulated, amplified, and detected—need to be integrated with standard electronic circuits in order to combine the information-processing capabilities of electronics data transfer and the speed of light. Long-distance communications, local-area-networks data transfer, and chip-to-chip or even intrachip optical communications all require the deve

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16

Carpintero, G., M. Chitoui, F. van Dijk, et al. "Microwave Photonic Integrated Circuits for Millimeter-Wave Wireless Communications." Journal of Lightwave Technology 32, no. 20 (2014): 3495–501. http://dx.doi.org/10.1109/jlt.2014.2321573.

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17

Tezuka, Hiroshi, Kiyoshi Fukuchi, Takeshi Takeuchi, et al. "20-gb/s optical transmitter and receiver using sige integrated circuits." Electronics and Communications in Japan (Part I: Communications) 79, no. 12 (1996): 25–35. http://dx.doi.org/10.1002/ecja.4410791203.

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18

Fontaine, Nicolas K., Ryan P. Scott, and S. J. B. Yoo. "Dynamic optical arbitrary waveform generation and detection in InP photonic integrated circuits for Tb/s optical communications." Optics Communications 284, no. 15 (2011): 3693–705. http://dx.doi.org/10.1016/j.optcom.2011.03.045.

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19

SANO, EIICHI, KAZUO HAGIMOTO, and YASUNOBU ISHII. "PRESENT STATUS AND FUTURE PROSPECTS OF HIGH-SPEED LIGHTWAVE ICS BASED ON INP." International Journal of High Speed Electronics and Systems 09, no. 02 (1998): 567–93. http://dx.doi.org/10.1142/s0129156498000245.

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High-speed integrated circuits (ICs) are essential for expanding the capacity of light-wave communications. InP-based heterostructure field effect transistors (HFETs) and heterojunction bipolar transistors (HBTs) are very promising for producing high-speed digital and analog ICs. This paper reviews the current status of InP-based lightwave communication ICs in terms of device, circuit, and packaging technologies. A successful 40-Gbit/s, 300-km optical fiber transmission using InP HFET ICs demonstrates the feasibility of the ICs. Furthermore, we estimate future IC performance based on the relat

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20

Deshours, Frédérique, Anne-Laure Billabert, Catherine Algani, Fabrice Blache, Christian Rumelhard, and Georges Alquié. "A 40 Gbps electro-absorption modulator integrated laser modeling method for optical transmitter in ultra-wide band radio-over-fiber systems." International Journal of Microwave and Wireless Technologies 1, no. 6 (2009): 511–19. http://dx.doi.org/10.1017/s1759078709990791.

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The great interest of optical fiber links in communicating systems especially in ultra-wide band (UWB) communications has grown up in the last decade and requires co-simulation for mixed circuits design exploiting both optical and microwave domains. In this paper, we report an original modeling method of an electro-absorption modulator associated with a distributed-feedback laser to simulate an optical transmitter of an UWB over fiber system. Large signal optoelectronic device models can be developed and implemented in a high-frequency simulator, such as advanced design system-Ptolemy to analy

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21

Liu, Zilong, Xiaosuo Wu, Huifu Xiao, et al. "On-chip optical parity checker using silicon photonic integrated circuits." Nanophotonics 7, no. 12 (2018): 1939–48. http://dx.doi.org/10.1515/nanoph-2018-0140.

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AbstractThe optical parity checker plays an important role in error detection and correction for high-speed, large-capacity, complex digital optical communication networks, which can be employed to detect and correct the error bits by using a specific coding theory such as introducing error-detecting and correcting codes in communication channels. In this paper, we report an integrated silicon photonic circuit that is capable of implementing the parity checking for binary string with an arbitrary number of bits. The proposed parity checker consisting of parallel cascaded N micro-ring resonator

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22

Holmes, Jim, A. Matthew Francis, Ian Getreu, Matthew Barlow, Affan Abbasi, and H. Alan Mantooth. "Extended High-Temperature Operation of Silicon Carbide CMOS Circuits for Venus Surface Application." Journal of Microelectronics and Electronic Packaging 13, no. 4 (2016): 143–54. http://dx.doi.org/10.4071/imaps.527.

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In the last decade, significant effort has been expended toward the development of reliable, high-temperature integrated circuits. Designs based on a variety of active semiconductor devices including junction field-effect transistors and metal-oxide-semiconductor (MOS) field-effect transistors have been pursued and demonstrated. More recently, advances in low-power complementary MOS (CMOS) devices have enabled the development of highly integrated digital, analog, and mixed-signal integrated circuits. The results of elevated temperature testing (as high as 500°C) of several building block circu

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23

Duan, Guang-Hua, Segolene Olivier, Christophe Jany, et al. "Hybrid III-V Silicon Photonic Integrated Circuits for Optical Communication Applications." IEEE Journal of Selected Topics in Quantum Electronics 22, no. 6 (2016): 379–89. http://dx.doi.org/10.1109/jstqe.2016.2614661.

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24

Runge, K., W. I. Way, M. Bagheri, et al. "Silicon bipolar integrated circuits for multi-Gb/second optical communication systems." IEEE Journal on Selected Areas in Communications 9, no. 5 (1991): 636–44. http://dx.doi.org/10.1109/49.87630.

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25

Chiappa, Pierangelo. "Photonic Integrated Circuits for Cost-Effective, High Port Density, and Higher Capacity Optical Communications Systems." Fiber and Integrated Optics 27, no. 4 (2008): 278–85. http://dx.doi.org/10.1080/01468030802192575.

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26

Righini, Giancarlo C., and Jesús Liñares. "Active and Quantum Integrated Photonic Elements by Ion Exchange in Glass." Applied Sciences 11, no. 11 (2021): 5222. http://dx.doi.org/10.3390/app11115222.

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Ion exchange in glass has a long history as a simple and effective technology to produce gradient-index structures and has been largely exploited in industry and in research laboratories. In particular, ion-exchanged waveguide technology has served as an excellent platform for theoretical and experimental studies on integrated optical circuits, with successful applications in optical communications, optical processing and optical sensing. It should not be forgotten that the ion-exchange process can be exploited in crystalline materials, too, and several crucial devices, such as optical modulat

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27

Koyama, Fumio, Toru Miura, and Yasuki Sakurai. "Tunable hollow optical waveguides and their applications for photonic integrated circuits." Electronics and Communications in Japan (Part II: Electronics) 89, no. 4 (2006): 9–19. http://dx.doi.org/10.1002/ecjb.20211.

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28

Allen, M., C. Liou, S. Melle, and V. Vusirikala. "Digital optical networks using photonic integrated circuits (PICs) address the challenges of reconfigurable optical networks." IEEE Communications Magazine 46, no. 1 (2008): 35–43. http://dx.doi.org/10.1109/mcom.2008.4427228.

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29

Zeng, Xiang-jun, Xu Yang, and Zhao-an Wang Xi'an. "Analysis of Capacitive and Inductive Coupling inside Hybrid Integrated Power Electronic Module." Journal of Microelectronics and Electronic Packaging 1, no. 3 (2004): 169–75. http://dx.doi.org/10.4071/1551-4897-1.3.169.

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Electromagnetic compatibility has to be given enough attention in the design of hybrid Integrated Power Electronic Module (IPEM) due to the sharply decreased distances between power devices and the control/driving circuits as compared to such distances for conventional power electronic equipment built with discrete devices. The high dν/dt, di/dt and high frequency parasitic ringing emanating from the switching circuit can cause serious EMI within the control/driving circuit due to cross-coupling. This paper analyzes the capacitive and inductive cross-coupling problems inside an IPEM. Finite El

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30

Yin, Shu Hua. "Key Technologies of On-Line Monitoring Based on Optical Transport Networks." Applied Mechanics and Materials 556-562 (May 2014): 2681–84. http://dx.doi.org/10.4028/www.scientific.net/amm.556-562.2681.

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To meet the comprehensive maintenance demand of optical fiber transportation networks, an integrated optical cable on-line monitoring system is designed in this research. The researched employs modular structure, integrated function, and blended multiple communication interfaces for the key technologies of monitoring 128 modules. By using the technologies, speech path and signaling are able to transmit simultaneously. Then the research establishes the on-line monitoring system which integrates the functions of real-time monitoring of terminal offices on optical cable line and end machine, auto

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31

Stojanović, Goran, Milan Radovanović, and Vasa Radonić. "A New Fractal-Based Design of Stacked Integrated Transformers." Active and Passive Electronic Components 2008 (2008): 1–8. http://dx.doi.org/10.1155/2008/134805.

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Silicon-based radio-frequency integrated circuits are becoming more and more competitive in wide-band frequency range. An essential component of these ICs is on-chip (integrated) transformer. It is widely used in mobile communications, microwave integrated circuits, low-noise amplifiers, active mixers, and baluns. This paper deals with the design, simulation, and analysis of novel fractal configurations of the primary and secondary coils of the integrated transformers. Integrated stacked transformers, which use fractal curves (Hilbert, Peano, and von Koch) to form the primary and secondary win

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32

Chen, Liang-Yu, Philip G. Neudeck, David J. Spry, Glenn M. Beheim, and Gary W. Hunter. "Electrical Performance of a 32-I/O HTCC Alumina Package for High-Temperature Microelectronics." Journal of Microelectronics and Electronic Packaging 14, no. 1 (2017): 11–16. http://dx.doi.org/10.4071/imaps.529.

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A high-temperature cofired ceramic (HTCC) alumina material was previously electrically tested at temperatures up to 550°C and demonstrated improved dielectric performance at high temperatures compared with the 96% alumina substrate that we used before, suggesting its potential use for high-temperature packaging applications. This article introduces a prototype 32-input/output (I/O) HTCC alumina package with platinum conductor for 500°C low-power SiC-integrated circuits. The design and electrical performance of this package, including parasitic capacitance and parallel conductance of neighborin

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33

No, You-Shin. "Electrically Driven Micro- and Nano-Scale Semiconductor Light Sources." Applied Sciences 9, no. 4 (2019): 802. http://dx.doi.org/10.3390/app9040802.

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Emerging optical technology capable of addressing the limits in modern electronics must incorporate unique solutions to bring about a revolution in high-speed, on-chip data communication and information processing. Among the possible optical devices that can be developed, the electrically driven, ultrasmall semiconductor light source is the most essential element for a compact, power-efficient photonic integrated circuit. In this review, we cover the recent development of the electrically driven light-emitting devices based on various micro- and nano-scale semiconductor optical cavities. We al

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34

Merken, Patrick, Tim Souverijns, Jan Putzeys, Ybe Creten, and Chris Van Hoof. "Flight Qualification and Circuit Development of Sensor Front-End Electronics for PACS/Hershel at Liquid Helium Temperature." Journal of Microelectronics and Electronic Packaging 4, no. 4 (2007): 130–35. http://dx.doi.org/10.4071/1551-4897-4.4.130.

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In the framework of the development of the European Space Agency's Herschel Space Observatory (HSO), IMEC designed the cold-readout electronics (CRE) for the PACS instrument. Key specifications for this circuit were high linearity, low power consumption, high uniformity, and very low noise at an operating temperature of 4.2K (liquid helium temperature, LHT). To ensure high production yields and uniformity, relatively easy availability of the technology, and portability of the design, the circuit was implemented in a standard CMOS technology. The circuits are functional at room temperature, whi

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35

Mukherjee, Chhandak, Marina Deng, Virginie Nodjiadjim, et al. "Towards Monolithic Indium Phosphide (InP)-Based Electronic Photonic Technologies for beyond 5G Communication Systems." Applied Sciences 11, no. 5 (2021): 2393. http://dx.doi.org/10.3390/app11052393.

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This review paper reports the prerequisites of a monolithic integrated terahertz (THz) technology capable of meeting the network capacity requirements of beyond-5G wireless communications system (WCS). Keeping in mind that the terahertz signal generation for the beyond-5G networks relies on the technology power loss management, we propose a single computationally efficient software design tool featuring cutting-edge optical devices and high speed III–V electronics for the design of optoelectronic integrated circuits (OEICs) monolithically integrated on a single Indium-Phosphide (InP) die. Thro

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Kik, P. G., and A. Polman. "Erbium-Doped Optical-Waveguide Amplifiers on Silicon." MRS Bulletin 23, no. 4 (1998): 48–54. http://dx.doi.org/10.1557/s0883769400030268.

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Thin-film integrated optics is becoming more and more important in optical-communications technology. The fabrication of passive devices such as planar optical waveguides, splitters, and multiplexers is now quite well-developed. Devices based on this technology are now commercially available. One step to further improve this technology is to develop optical amplifiers that can be integrated with these devices. Such amplifiers can compensate for the losses in splitters or other optical components, and can also serve as pre-amplifiers for active devices such as detectors.In optical-fiber technol

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37

Lanni, L., B. G. Malm, C. M. Zetterling, and M. Östling. "A 4H-SiC Bipolar Technology for High-Temperature Integrated Circuits." Journal of Microelectronics and Electronic Packaging 10, no. 4 (2013): 155–62. http://dx.doi.org/10.4071/imaps.390.

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A 4H-SiC bipolar technology suitable for high-temperature integrated circuits is tested with two interconnect systems based on aluminum and platinum. Successful operation of low-voltage bipolar transistors and digital integrated circuits based on emitter coupled logic (ECL) is reported from 27°C up to 500°C for both the metallization systems. When operated on −15 V supply voltage, aluminum and platinum interconnect OR-NOR gates showed stable noise margins of about 1 V and asymmetric propagation delays of about 200 and 700 ns in the whole temperature range for both OR and NOR output. The perfor

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Makri, R., M. Gargalakos, and N. K. Uzunoglu. "Design and Development of Monolithic Microwave Integrated Amplifiers and Coupling Circuits for Telecommunication Systems Applications." Active and Passive Electronic Components 25, no. 1 (2002): 1–22. http://dx.doi.org/10.1080/08827510211275.

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Recent advances in printed circuit and packaging technology of microwave and millimeter wave circuits result to the increasing use of MMICs in telecommunication systems. At Microwave and Fiber Optics Lab of NTUA several designs of various MMICs were conducted using the HP Eesof CAD Tool and FET and HEMT models of F20 and H40 GaAs foundry process of GEC Marconi. The designed MMICs are constructed in Europractice Organization while on-wafer probe measurements are performed in the Lab. In that framework, MMIC technologies are employed in the design of power and low noise amplifiers and couplers t

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Suzuki, A., K. Kasahara, and M. Shikada. "InGaAsP/InP long wavelength optoelectronic integrated circuits (OEIC's) for high-speed optical fiber communication systems." Journal of Lightwave Technology 5, no. 10 (1987): 1479–87. http://dx.doi.org/10.1109/jlt.1987.1075439.

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SITCH, JOHN, and ROBERT SURRIDGE. "HBT ICs FOR OC-192 EQUIPMENT." International Journal of High Speed Electronics and Systems 09, no. 02 (1998): 549–66. http://dx.doi.org/10.1142/s0129156498000233.

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Heterojunction bipolar transistor (HBT) integrated circuits are just beginning to appear on the commercial market, mostly as small-scale microwave and broadband parts. The high-speed portion of Nortel's OC-192 fiber communications product makes extensive use of this new technology, and this article describes the rationale for using HBT ICs in such a system, and the philosophy behind HBT IC introduction.

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Huang, Tsung-Ching, Ting Lei, Leilai Shao, et al. "Process Design Kit and Design Automation for Flexible Hybrid Electronics." Journal of Microelectronics and Electronic Packaging 16, no. 3 (2019): 117–23. http://dx.doi.org/10.4071/imaps.925849.

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Abstract High-performance low-cost flexible hybrid electronics (FHE) are desirable for applications such as internet of things and wearable electronics. Carbon nanotube (CNT) thin-film transistor (TFT) is a promising candidate for high-performance FHE because of its high carrier mobility, superior mechanical flexibility, and material compatibility with low-cost printing and solution processes. Flexible sensors and peripheral CNT-TFT circuits, such as decoders, drivers, and sense amplifiers, can be printed and hybrid-integrated with thinned (&lt;50 μm) silicon chips on soft, thin, and flexi

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Lamy, Yann, Haykel Ben Jamaa, Hughes Metras, Stéphane Bernabé, Sylvie Menezo, and Laurent Fulbert. "Heterogeneous Integration of Photonic Integrated Circuits Using 3D Assembly Techniques: Silicon Technology and Packaging." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2014, DPC (2014): 002057–86. http://dx.doi.org/10.4071/2014dpc-tha31.

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The large internet companies' investments indicate an ongoing increase of data-based business volume through the next decades with the rise of the internet of things and the continuous growth of communication and data facilities. The two-figure yearly growth rate of exchanged data volume within data centers is challenging the actual short distance communication paradigms. With datacenter architectures getting larger and “flatter”, the availability of high bandwidth, low power and low cost optical links ranging from less than 1 meter to 1 kilometer is a key issue. It is therefore expected that

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Dove, Lewis. "Multi-Layer Ceramic Packaging for High Frequency Mixed-Signal VLSI ASICS." Journal of Microelectronics and Electronic Packaging 6, no. 1 (2009): 38–41. http://dx.doi.org/10.4071/1551-4897-6.1.38.

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Mixed-signal Application Specific Integrated Circuits (ASICs) have traditionally been used in test and measurement applications for a variety of functions such as data converters, pin electronics circuitry, drivers, and receivers. Over the past several years, the complexity, power density, and bandwidth of these chips has increased dramatically. This has necessitated dramatic changes in the way these chips have been packaged. As the chips have become true VLSI (Very Large Scale Integration) ICs, the number of I/Os have become too large to interconnect with wire bonds. Thus, it has become neces

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Liu, Qing, Patrick Fay, and Gary H. Bernstein. "A Novel Scheme for Wide Bandwidth Chip-to-Chip Communications." Journal of Microelectronics and Electronic Packaging 4, no. 1 (2007): 1–7. http://dx.doi.org/10.4071/1551-4897-4.1.1.

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Quilt Packaging (QP), a novel chip-to-chip communication paradigm for system-in-package integration, is presented. By forming protruding metal nodules along the edges of the chips and interconnecting integrated circuits (ICs) through them, QP offers an approach to ameliorate the I/O speed bottleneck. A fabrication process that includes deep reactive ion etching, electroplating, and chemical-mechanical polishing is demonstrated. As a low-temperature process, it can be easily integrated into a standard IC fabrication process. Three-dimensional electromagnetic simulations of coplanar waveguide QP

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LIANG, CHUNGUANG, QINGMING ZENG, ZHENCHANG MA, MINGWEN YUAN, and JINPING AO. "GaAs HIGH SPEED DEVICES AND CIRCUITS." International Journal of High Speed Electronics and Systems 07, no. 03 (1996): 447–61. http://dx.doi.org/10.1142/s0129156496000256.

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This paper presents the R&D of GaAs-based high speed devices and circuits at the Hebei Semiconductor Research Institute (HSRI) in China. It is concerned with low noise and medium power GaAs-MESFET MMIC and monolithic laser diode driver and preamplifier for 2.4 Gb/s fiber communication application, GaAs-based high speed digital circuits like single and dual modulus frequency divider, digital/analog convertor, shift register, HEMT and HBT integrated circuits.

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Tran, A. T. T. D., G. L. Christenson, Z. H. Zhu, D. Haronian, and Y. H. Lo. "Micromachined Micro-Optic and Optoelectronic Devices." International Journal of High Speed Electronics and Systems 08, no. 02 (1997): 299–323. http://dx.doi.org/10.1142/s0129156497000111.

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Rencent progress on micromachined micro-optic and optoelectronic devices is discussed. We describe a low temperature (240°C) surface micromachining process that can be used to fabricate a variety of micro-optic components on micromachined membranes integrated with microactuators. The devices discussed in this paper include Fabry-Pérot tunable filters with a 341 nm tuning range, wavelength tunable transmitters at 1.55 micron wavelength, high-sensitivity integrated sensors using optical Moiré patterns, and movable microlenses. Such devices represent a new class of micro-optic circuits that will

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Wang, Ke, Zeshi Yuan, Elaine Wong, et al. "Experimental Demonstration of Indoor Infrared Optical Wireless Communications With a Silicon Photonic Integrated Circuit." Journal of Lightwave Technology 37, no. 2 (2019): 619–26. http://dx.doi.org/10.1109/jlt.2018.2889252.

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Melamed, Samson, Fumito Imura, Hiroshi Nakagawa, et al. "Cool Interconnect: A 1024-bit Wide Bus for Chip-to-Chip Communications in 3-D Integrated Circuits." IEEE Transactions on Components, Packaging and Manufacturing Technology 9, no. 3 (2019): 525–35. http://dx.doi.org/10.1109/tcpmt.2018.2873298.

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Lenzini, Francesco, Jiri Janousek, Oliver Thearle, et al. "Integrated photonic platform for quantum information with continuous variables." Science Advances 4, no. 12 (2018): eaat9331. http://dx.doi.org/10.1126/sciadv.aat9331.

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Integrated quantum photonics provides a scalable platform for the generation, manipulation, and detection of optical quantum states by confining light inside miniaturized waveguide circuits. Here, we show the generation, manipulation, and interferometric stage of homodyne detection of nonclassical light on a single device, a key step toward a fully integrated approach to quantum information with continuous variables. We use a dynamically reconfigurable lithium niobate waveguide network to generate and characterize squeezed vacuum and two-mode entangled states, key resources for several quantum

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Xie, Jingya, Wangcheng Ye, Linjie Zhou, et al. "A Review on Terahertz Technologies Accelerated by Silicon Photonics." Nanomaterials 11, no. 7 (2021): 1646. http://dx.doi.org/10.3390/nano11071646.

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In the last couple of decades, terahertz (THz) technologies, which lie in the frequency gap between the infrared and microwaves, have been greatly enhanced and investigated due to possible opportunities in a plethora of THz applications, such as imaging, security, and wireless communications. Photonics has led the way to the generation, modulation, and detection of THz waves such as the photomixing technique. In tandem with these investigations, researchers have been exploring ways to use silicon photonics technologies for THz applications to leverage the cost-effective large-scale fabrication

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