Journal articles: 'Integrated nanolasers'

1

Gu, Qing, Joseph S. T. Smalley, Janelle Shane, Olesya Bondarenko, and Yeshaiahu Fainman. "Temperature effects in metal-clad semiconductor nanolasers." Nanophotonics 4, no. 1 (April 13, 2015): 26–43. http://dx.doi.org/10.1515/nanoph-2013-0058.

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AbstractAs the field of semiconductor nanolasers becomes mature in terms of both the miniaturization to the true sub-wavelength scale, and the realization of room temperature devices, the integrated treatment of multiple design aspects beyond pure electromagnetic consideration becomes necessary to further advance the field. In this review, we focus on one such design aspect: temperature effects in nanolasers. We summarize recent efforts in understanding the interplay of various temperature-dependent parameters, and study their effects on optical mode and emission characteristics. Building on this knowledge, nanolasers with improved thermal performance can be designed, and their performance evaluated. Although this review focuses on metal-clad semiconductor lasers because of their suitability for dense chip-scale integration, these thermal considerations also apply to the broader field of nanolasers.

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Xu, Litu, Fang Li, Yahui Liu, Fuqiang Yao, and Shuai Liu. "Surface Plasmon Nanolaser: Principle, Structure, Characteristics and Applications." Applied Sciences 9, no. 5 (February 28, 2019): 861. http://dx.doi.org/10.3390/app9050861.

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Photonic devices are becoming more and more miniaturized and highly integrated with the advancement of micro-nano technology and the rapid development of integrated optics. Traditional semiconductor lasers have diffraction limit due to the feedback from the optical system, and their cavity length is more than half of the emission wavelength, so it is difficult to achieve miniaturization. Nanolasers based on surface plasmons can break through the diffraction limit and achieve deep sub-wavelength or even nano-scale laser emission. The improvement of modern nanomaterial preparation processes and the gradual maturity of micro-nano machining technology have also provided technical conditions for the development of sub-wavelength and nano-scale lasers. This paper describes the basic principles of surface plasmons and nano-resonators. The structure and characteristics of several kinds of plasmonic nanolasers are discussed. Finally, the paper looks forward to the application and development trend of nanolasers.

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Totero Gongora, Juan S., and Andrea Fratalocchi. "Integrated nanolasers via complex engineering of radiationless states." Journal of Physics: Photonics 3, no. 1 (December 15, 2020): 011001. http://dx.doi.org/10.1088/2515-7647/abc60e.

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Liu, Yahui, Fang Li, Cheng Xu, Zhichong He, Jie Gao, Yunpeng Zhou, and Litu Xu. "The Design and Research of a New Hybrid Surface Plasmonic Waveguide Nanolaser." Materials 14, no. 9 (April 26, 2021): 2230. http://dx.doi.org/10.3390/ma14092230.

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Using the hybrid plasmonic waveguide (HPW) principle as a basis, a new planar symmetric Ag-dielectric-SiO2 hybrid waveguide structure is designed and applied to nanolasers. First, the effects on the electric field distribution and the characteristic parameters of the waveguide structure of changes in the material, the nanometer radius, and the dielectric layer thickness were studied in detail using the finite element method with COMSOL Multiphysics software. The effects of two different dielectric materials on the HPW were studied. It was found that the waveguide performance could be improved effectively and the mode propagation loss was reduced when graphene was used as the dielectric, with the minimum effective propagation loss reaching 0.025. Second, the gain threshold and the quality factor of a nanolaser based on the proposed hybrid waveguide structure were analyzed. The results showed that the nanolaser has a lasing threshold of 1.76 μm−1 and a quality factor of 109 when using the graphene dielectric. A low-loss, low-threshold laser was realized, and the mode field was constrained by deep sub-wavelength light confinement. This structure has broad future application prospects in the integrated optics field and provides ideas for the development of subminiature photonic devices and high-density integrated circuits.

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Kang, Jang-Won, Bokyung Song, Wenjing Liu, Seong-Ju Park, Ritesh Agarwal, and Chang-Hee Cho. "Room temperature polariton lasing in quantum heterostructure nanocavities." Science Advances 5, no. 4 (April 2019): eaau9338. http://dx.doi.org/10.1126/sciadv.aau9338.

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Ultralow-threshold coherent light emitters can be achieved through lasing from exciton-polariton condensates, but this generally requires sophisticated device structures and cryogenic temperatures. Polaritonic nanolasers operating at room temperature lie on the crucial path of related research, not only for the exploration of polariton physics at the nanoscale but also for potential applications in quantum information systems, all-optical logic gates, and ultralow-threshold lasers. However, at present, progress toward room temperature polariton nanolasers has been limited by the thermal instability of excitons and the inherently low quality factors of nanocavities. Here, we demonstrate room temperature polaritonic nanolasers by designing wide-gap semiconductor heterostructure nanocavities to produce thermally stable excitons coupled with nanocavity photons. The resulting mixed states of exciton polaritons with Rabi frequencies of approximately 370 meV enable persistent polariton lasing up to room temperature, facilitating the realization of miniaturized and integrated polariton systems.

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Chou, Bo-Tsun, Tien-Chang Lu, and Sheng-Di Lin. "Design of Bottom-Emitting Metallic Nanolasers Integrated With Silicon-On-Insulator Waveguides." Journal of Lightwave Technology 33, no. 10 (May 15, 2015): 2087–92. http://dx.doi.org/10.1109/jlt.2015.2397889.

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7

Fainman, Yeshaiahu, D. Tan, S. Zamek, O. Bondarenko, A. Simic, A. Mizrahi, M. Nezhad, et al. "Passive and Active Nanophotonics." Advances in Science and Technology 82 (September 2012): 9–18. http://dx.doi.org/10.4028/www.scientific.net/ast.82.9.

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Dense photonic integration requires miniaturization of materials, devices and subsystems, including passive components (e.g., engineered composite metamaterials, filters, etc.) and active components (e.g., lasers, modulators, detectors). This paper discusses passive and active devices that recently have been demonstrated in our laboratory, including monolithically integrated short pulse compressor utilized with silicon on insulator material platform and design, fabrication and testing of nanolasers constructed using metal-dielectric-semiconductor resonators confined in all three dimensions.

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Agarwal, Aanchal, Wei-Yang Tien, Yu-Sheng Huang, Ragini Mishra, Chang-Wei Cheng, Shangjr Gwo, Ming-Yen Lu, and Lih-Juann Chen. "ZnO Nanowires on Single-Crystalline Aluminum Film Coupled with an Insulating WO3 Interlayer Manifesting Low Threshold SPP Laser Operation." Nanomaterials 10, no. 9 (August 27, 2020): 1680. http://dx.doi.org/10.3390/nano10091680.

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ZnO nanowire-based surface plasmon polariton (SPP) nanolasers with metal–insulator–semiconductor hierarchical nanostructures have emerged as potential candidates for integrated photonic applications. In the present study, we demonstrated an SPP nanolaser consisting of ZnO nanowires coupled with a single-crystalline aluminum (Al) film and a WO3 dielectric interlayer. High-quality ZnO nanowires were prepared using a vapor phase transport and condensation deposition process via catalyzed growth. Subsequently, prepared ZnO nanowires were transferred onto a single-crystalline Al film grown by molecular beam epitaxy (MBE). Meanwhile, a WO3 dielectric interlayer was deposited between the ZnO nanowires and Al film, via e-beam technique, to prevent the optical loss from dominating the metallic region. The metal–oxide–semiconductor (MOS) structured SPP laser, with an optimal WO3 insulating layer thickness of 3.6 nm, demonstrated an ultra-low threshold laser operation (lasing threshold of 0.79 MW cm−2). This threshold value was nearly eight times lower than that previously reported in similar ZnO/Al2O3/Al plasmonic lasers, which were ≈2.4 and ≈3 times suppressed compared to the SPP laser, with WO3 insulating layer thicknesses of 5 nm and 8 nm, respectively. Such suppression of the lasing threshold is attributed to the WO3 insulating layer, which mediated the strong confinement of the optical field in the subwavelength regime.

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Crosnier, Guillaume, Alexandre Bazin, Vincenzo Ardizzone, Paul Monnier, Rama Raj, and Fabrice Raineri. "Subduing surface recombination for continuous-wave operation of photonic crystal nanolasers integrated on Silicon waveguides." Optics Express 23, no. 21 (October 15, 2015): 27953. http://dx.doi.org/10.1364/oe.23.027953.

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10

Kim, Youngsoo, Young Lee, Seokhyeon Hong, Kihwan Moon, and Soon-Hong Kwon. "Photonic Crystal Cavity with a Thin Low-Index Layer for Silicon-Compatible Nanolight Source." Applied Sciences 8, no. 9 (September 4, 2018): 1552. http://dx.doi.org/10.3390/app8091552.

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The development of an efficient silicon-based nanolight source is an important step for silicon-based photonic integrated circuits. We propose a high quality factor photonic crystal nanocavity consisting of silicon and silica, which can be used as a silicon-compatible nanolight source. We show that this cavity can effectively confine lights in a low-index silica layer with a high confinement factor of 0.25, in which rare-earth dopants can be embedded as gain materials. The cavity is optimized to have a high quality factor of 15,000 and a mode volume of 0.01 μm3, while the resonance has a wavelength of 1537 nm. We expect that the high confinement factor in the thin silica layer and the high quality factor of the proposed cavity enable the cavity to be a good candidate for silicon-compatible nanolight sources for use in nanolasers or light-emitting diodes in the telecommunication wavelength region.

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11

Li, Chun, Zhen Liu, Jie Chen, Yan Gao, Meili Li, and Qing Zhang. "Semiconductor nanowire plasmonic lasers." Nanophotonics 8, no. 12 (October 30, 2019): 2091–110. http://dx.doi.org/10.1515/nanoph-2019-0206.

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AbstractSemiconductor nanowires (NW) hold great promise for micro/nanolasers owing to their naturally formed resonant microcavity, tightly confined electromagnetic field, and outstanding capability of integration with planar waveguide for on-chip optoelectronic applications. However, constrained by the optical diffraction limit, the dimension of semiconductor lasers cannot be smaller than half the optical wavelength in free space, typically several hundreds of nanometers. Semiconductor NW plasmonic lasers provide a solution to break this limitation and realize deep sub-wavelength light sources. In this review, we summarize the advances of semiconductor NW plasmonic lasers since their first demonstration in 2009. First of all, we briefly look into the fabrication and physical/chemical properties of semiconductor NWs. Next, we discuss the fundamentals of surface plasmons as well as the recent progress in semiconductor NW plasmonic lasers from the aspects of multicolor realization, threshold reduction, ultrafast modulation, and electrically driven operations, along with their applications in sensing and integrated optics. Finally, we provide insights into bright perspectives and remaining challenges.

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12

Wu, Chao, Wei Wei, Xueguang Yuan, Yangan Zhang, Xin Yan, and Xia Zhang. "Design and Simulation of Low-Threshold Miniaturized Single-Mode Nanowire Lasers Combined with a Photonic Crystal Microcavity and Asymmetric Distributed-Bragg-Reflector Mirrors." Nanomaterials 10, no. 12 (November 26, 2020): 2344. http://dx.doi.org/10.3390/nano10122344.

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A low-threshold miniaturized single-mode nanowire laser operating at telecommunication wavelengths was proposed and simulated. The device was constructed by combining a single InGaAs nanowire with a photonic crystal microcavity and asymmetric distributed-Bragg-reflector mirrors. The mode characteristics and threshold properties were calculated using the three-dimensional finite-different time-domain method. Due to the effective subwavelength confinement and strong optical feedback, provided by the photonic crystal microcavity, and distributed-Bragg-reflector mirrors, respectively, the confinement factor, end-facet reflectivity, and quality factor significantly improved. A lowest threshold of ~80 cm−1 and ultra-small cut-off radius of ~40 nm are obtained, reduced by 67%, and 70%, respectively, compared with a traditional nanowire laser. In addition, due to the photonic band gap effect, single-mode lasing is achieved with a high side-mode suppression ratio of >12 dB. By placing several identical nanowires in the photonic crystal with different lattice constants, an on-chip laser array is realized, which is promising in wavelength division multiplexing applications. This work may pave the way for the development of low-threshold miniaturized nanolasers and low-consumption high-density photonic integrated circuits.

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13

Couteau, C., A. Larrue, C. Wilhelm, and C. Soci. "Nanowire Lasers." Nanophotonics 4, no. 1 (May 20, 2015): 90–107. http://dx.doi.org/10.1515/nanoph-2015-0005.

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Abstract:We review principles and trends in the use of semiconductor nanowires as gain media for stimulated emission and lasing. Semiconductor nanowires have recently been widely studied for use in integrated optoelectronic devices, such as light-emitting diodes (LEDs), solar cells, and transistors. Intensive research has also been conducted in the use of nanowires for subwavelength laser systems that take advantage of their quasione- dimensional (1D) nature, flexibility in material choice and combination, and intrinsic optoelectronic properties. First, we provide an overview on using quasi-1D nanowire systems to realize subwavelength lasers with efficient, directional, and low-threshold emission. We then describe the state of the art for nanowire lasers in terms of materials, geometry, andwavelength tunability.Next,we present the basics of lasing in semiconductor nanowires, define the key parameters for stimulated emission, and introduce the properties of nanowires. We then review advanced nanowire laser designs from the literature. Finally, we present interesting perspectives for low-threshold nanoscale light sources and optical interconnects. We intend to illustrate the potential of nanolasers inmany applications, such as nanophotonic devices that integrate electronics and photonics for next-generation optoelectronic devices. For instance, these building blocks for nanoscale photonics can be used for data storage and biomedical applications when coupled to on-chip characterization tools. These nanoscale monochromatic laser light sources promise breakthroughs in nanophotonics, as they can operate at room temperature, can potentially be electrically driven, and can yield a better understanding of intrinsic nanomaterial properties and surface-state effects in lowdimensional semiconductor systems.

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14

Fedyanin, Dmitry Yu, Alexey V. Krasavin, Aleksey V. Arsenin, and Anatoly V. Zayats. "Lasing at the nanoscale: coherent emission of surface plasmons by an electrically driven nanolaser." Nanophotonics 9, no. 12 (July 20, 2020): 3965–75. http://dx.doi.org/10.1515/nanoph-2020-0157.

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AbstractPlasmonics offers a unique opportunity to break the diffraction limit of light and bring photonic devices to the nanoscale. As the most prominent example, an integrated nanolaser is a key to truly nanoscale photonic circuits required for optical communication, sensing applications and high-density data storage. Here, we develop a concept of an electrically driven subwavelength surface-plasmon-polariton nanolaser, which is based on a novel amplification scheme, with all linear dimensions smaller than the operational free-space wavelength λ and a mode volume of under λ3/30. The proposed pumping approach is based on a double-heterostructure tunneling Schottky barrier diode and gives the possibility to reduce the physical size of the device and ensure in-plane emission so that the nanolaser output can be naturally coupled to a plasmonic or nanophotonic waveguide circuitry. With the high energy efficiency (8% at 300 K and 37% at 150 K), the output power of up to 100 μW and the ability to operate at room temperature, the proposed surface plasmon polariton nanolaser opens up new avenues in diverse application areas, ranging from ultrawideband optical communication on a chip to low-power nonlinear photonics, coherent nanospectroscopy, and single-molecule biosensing.

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15

Wang, Zhechao, Bin Tian, Mohanchand Paladugu, Marianna Pantouvaki, Nicolas Le Thomas, Clement Merckling, Weiming Guo, et al. "Polytypic InP Nanolaser Monolithically Integrated on (001) Silicon." Nano Letters 13, no. 11 (October 2, 2013): 5063–69. http://dx.doi.org/10.1021/nl402145r.

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16

Khurgin, Jacob B., and Greg Sun. "How small can “Nano” be in a “Nanolaser”?" Nanophotonics 1, no. 1 (July 1, 2012): 3–8. http://dx.doi.org/10.1515/nanoph-2012-0017.

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AbstractWe show that the lasing threshold of the single mode metal-semiconductor nano-laser (spaser) is determined only by the photon absorption rate in the metal and exhibits very weak dependence on the composition, shape, size (as long as it is less than half-wavelength) and temperature of the gain medium. This threshold current is on the order of a few tens of micro-amperes for most semiconductor-metal combinations which leads to unattainably high threshold current densities for a substantially subwavelength laser (spaser). Therefore, in our view, surface plasmon emitting diodes, (SPEDs), operating far below “spasing” threshold may be a more viable option for the chip scale integrated nanophotonics.

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17

Nozaki, Kengo, Hideki Watanabe, and Toshihiko Baba. "Photonic crystal nanolaser monolithically integrated with passive waveguide for effective light extraction." Applied Physics Letters 92, no. 2 (January 14, 2008): 021108. http://dx.doi.org/10.1063/1.2831916.

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18

Huang, Yu, and C. M. Lieber. "Integrated nanoscale electronics and optoelectronics: Exploring nanoscale science and technology through semiconductor nanowires." Pure and Applied Chemistry 76, no. 12 (January 1, 2004): 2051–68. http://dx.doi.org/10.1351/pac200476122051.

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Semiconductor nanowires (NWs)represent an ideal system for investigating low-dimensional physics and are expected to play an important role as both interconnects and functional device elements in nanoscale electronic and optoelectronic devices. Here we review a series of key advances defining a new paradigm of bottom-up assembling integrated nanosystems using semiconductor NW building blocks. We first introduce a general approach for the synthesis of a broad range of semiconductor NWs with precisely controlled chemical composition, physical dimension, and electronic, optical properties using a metal cluster-catalyzed vapor-liquid-solid growth mechanism. Subsequently, we describe rational strategies for the hierarchical assembly of NW building blocks into functional devices and complex architectures based on electric field or micro-fluidic flow. Next, we discuss a variety of new nanoscale electronic device concepts including crossed NW p-n diode and crossed NW field effect transistors (FETs). Reproducible assembly of these scalable crossed NW device elements enables a catalog of integrated structures, including logic gates and computational circuits. Lastly, we describe a wide range of photonic and optoelectronic devices, including nanoscale light-emitting diodes (nanoLEDs), multicolor LED arrays, integrated nanoLED-nanoFET arrays, single nanowire waveguide, and single nanowire nanolaser. The potential application of these nanoscale light sources for chemical and biological analyses is discussed.

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19

Chang, Hao, Yichi Zhong, Hongxing Dong, Zhenyu Wang, Wei Xie, Anlian Pan, and Long Zhang. "Ultrastable low-cost colloidal quantum dot microlasers of operative temperature up to 450 K." Light: Science & Applications 10, no. 1 (March 18, 2021). http://dx.doi.org/10.1038/s41377-021-00508-7.

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AbstractQuantum dot microlasers, as multifunctional optical source components, are of great importance for full-color high-pixel display, miniaturized coherent lighting, and on-chip integrated photonic and electronic circuits. Since the first synthesis of colloidal quantum dots (CQD) in the 1990s, motivation to realize high-performance low-cost CQD micro-/nanolasers has been a driving force for more than three decades. However, the low packing density, inefficient coupling of CQDs with optical cavities, and the poor thermal stability of miniaturized complex systems make it challenging to achieve practical CQD micro-/nanolasers, especially to combine the continuous working ability at high temperatures and the low-cost potential with mass-produced synthesis technologies. Herein, we developed close-packed CQD-assembled microspheres and embedded them in a silica matrix through the rapid self-aggregation and solidification of CdSe/ZnS CQD. This technology addresses the core issues of photoluminescence (PL) quenching effect and low optical gain in traditional CQD laser research. High-efficiency low-threshold CQD microlasers are demonstrated together with long-playing (40 min) working stability even at 450 K under pulsed laser excitation, which is the highest operational temperature for CQD lasers. Moreover, single-mode CQD microlasers are obtained with tunable wavelengths across the entire visible spectral range. The chemosynthesis process supports the mass-produced potential of high-density integrated CQD microlasers, promoting CQD-based low-cost high-temperature microdevices.

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Journal articles on the topic 'Integrated nanolasers'

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