Relevant bibliographies by topics / Integrated Passive Devices IPD

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Integrated Passive Devices IPD'

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Published: 4 June 2021
Last updated: 4 February 2022

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Journal articles on the topic "Integrated Passive Devices IPD"

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Liu, Kai, YongTaek Lee, HyunTai Kim, Gwang Kim, and Billy Ahn. "RF System in Packages (SiP) using Integrated Passive Devices." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2011, DPC (January 1, 2011): 001977–95. http://dx.doi.org/10.4071/2011dpc-wp43.

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Passive components are indispensible parts used in System in Packages (SiP) for various functions, such as decoupling, biasing, resonating, filtering, matching, transforming, etc. Making passive components embedded inside laminate substrates is limited on passive density. SMD solutions are by far the most popular approaches in the industry, and may still be dominant for some times. As high integration and high performance have become a trend in the packaging solutions, integrated passive device (IPD) technology shows some unique features, which helps to achieve these goals, especially for RF packages. In the IPD process, low-loss substrate material is used, and therefore high-Q inductors can be built. In addition, thin-film IPD process has finer pitch feature and better tolerance control than other commonly available ones, such as PCB and LTCC technologies, which may yield very repeatable electrical performance, and provide packages of high integration. Several cases of study will be presented and here are some highlights of them. In case one, a most straightforward SiP approach is presented using QFN package, where several dies (including IPD dies) are implemented side-by-side. This approach may give fast developing cycle times. But importantly, wire-bonding models have big impact on performance from RF packaging, and should be obtained accurately for designs. Another case of study is a stack-die package, where inter-die coupling/cross talk could be a big issue as far as electrical performance is concerned. Placement of some critical parts, such as coils in IPD and in VCO, should be investigated very carefully in design phases. This leads to a concept of ‘IC/IPD/package’ co-design. Finally, a hybrid SiP package solution, where an IPD die is embedded in a mold compound along side with a RF power amplifier die, is presented. This approach (so called ‘eWLB’ packaging), results in the shortest interconnection between dies to dies and dies to balls. With the benefit from both the IPD process and the eWLB process (where low-loss mold materials are used), this approach may lead to high electrical performance and small form-factor at the same time.
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Prashant, Meenakshi, Seung Wook Yoon, GeunSik Kim, Kai Liu, and Flynn Carson. "Advanced SiP Packaging Technologies of IPD for Mobile Applications." Journal of Microelectronics and Electronic Packaging 7, no. 4 (October 1, 2010): 223–27. http://dx.doi.org/10.4071/imaps.267.

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Integrated passive device (IPD) technology was originally developed as a way to replace bulky discrete passive components, but it is now gaining popularity in ESD/EMI protection applications, as well as in RF, high-brightness LED silicon submounts, and digital and mixed-signal devices. IPD is a device realized by resistors, inductors, capacitors, filters, and so on, for electrical functions such as matching and transforming, among others. Passive devices essentially optimize overall device performance. The key benefits offered by IPDs, as compared with LTCC and laminate-embedded passive devices, are primarily a smaller form factor and higher performance. IPDs are finding applications wherever it is desirable to reduce space on the application board or to reduce cost at the system level.
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Lee, Ki-Hun, Eun-Seong Kim, Jun-Ge Liang, and Nam-Young Kim. "Design and Realization of a Compact High-Frequency Band-Pass Filter with Low Insertion Loss Based on a Combination of a Circular-Shaped Spiral Inductor, Spiral Capacitor and Interdigital Capacitor." Electronics 7, no. 9 (September 12, 2018): 195. http://dx.doi.org/10.3390/electronics7090195.

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In this study, the proposed bandpass filter (BPF) connects an interdigital and a spiral capacitor in series between the two symmetrical halves of a circular intertwined spiral inductor. For the mass production of devices and to achieve a higher accuracy and a better performance compared with other passive technologies, we used integrated passive device (IPD) technology. IPD has been widely used to realize compact BPFs and achieve the abovementioned. The center frequency of the proposed BPF is 1.96 GHz, and the return loss, insertion loss and transmission zero are 26.77 dB, 0.27 dB and 38.12 dB, respectively. The overall dimensions of BPFs manufactured using IPD technology are 984 × 800 μ m 2 , which is advantageous for miniaturization and integration.
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Liu, Kai, YongTaek Lee, HyunTai Kim, Gwang Kim, Guruprasad Badakere, Yaojian Lin, and Billy Ahn. "Passive Device Integration from Silicon Technology." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2010, DPC (January 1, 2010): 001967–89. http://dx.doi.org/10.4071/2010dpc-wp36.

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Passive components are indispensible parts used in electronics circuits for various functions, such decoupling, biasing, resonating, filtering, matching, transforming, etc. These passive components can be made on chips, or in PCBs, or in SMDs. SOC (system-on-chip) solutions where all passives are implemented may be long-term goals, but suffer high cost and long development cycle times at the time being. Making passive components embedded inside laminate substrates is limited on passive density. SMD solutions are by far the most popular approaches in the industry, and may still be dominant for some times. Passive components consume 70%–80% area of an electric package in a SiP solution, and therefore it is a great deal to reduce the area of passive components, in order to reduce the size of entire package. We have developed an IPD (integrated passive device) process from silicon technology to make these passive components of high-Q performance, preferably to be used in RF packages. Low-loss substrate material is used in this process, and thick Cu layer is used for high-Q inductors. From this process, we can make capacitors in 330pF/mm sq density, and the Q-factor is around 30–35 peak for a 3nH–5 nH inductor. Most importantly, the thin-film IPD process has better tolerance control than other commonly available ones, such as PCB and LTCC technologies, which may results in very repeatable electrical performance, and provides packages in high integration. For a passive function block, using BPF (band-pass-filter) as an example, an IPD filter is typically two times smaller in X-Y size and half thinner in Z-height. This makes such IPD very suitable to be integrated in a SiP package. Using some case studies (individual IPD and chip-scale-module-package), we will present how high integration can be achieved, and where are the right spots to use IPD approaches other than SAW, or SMD, or LTCC solutions for RF SiP applications.
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Bunel, C., J.-R. Tenailleau, F. Voiron, S. Borel, and A. Lefevre. "Integrated Passive Devices and TSV, a disruptive technology for miniaturization." International Symposium on Microelectronics 2013, no. 1 (January 1, 2013): 000794–98. http://dx.doi.org/10.4071/isom-2013-thp12.

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The 3D Silicon technology of IPDiA is a disruptive technology for miniaturization adopted by the best players in the Medical and Industrial segments for its outstanding performance and reliability demonstrated in harsh environments. The high density capacitors with multiple metal-insulator-metal (MIM) layer stacks in 3D structures reaching 250nF/mm2 already in production for several years is at the forefront of the research program where CEA-Leti and IPDiA are jointly providing innovative platforms for customers who want to combine these capacitors with Through Silicon Vias in order to demonstrate new technological concepts. The via last approach selected by IPDIA allows large possibility of integration combining TSV with active or passive devices such as High-density trench capacitors, MIM capacitors, Resistors, High-Q inductors or Zener diodes. In this paper, the interaction between TSV and IPD will be studied. Emphasis will be placed on the robustness of the 3D trench capacitor technology. Examples of applications using chip-to-chip interconnections through a passive TSV interposer in a 3D IC integration system-in-package (SiP) will be illustrated.
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Park, Yun-Mook, Jun-Kyu Lee, Byung-Jin Park, Byeung-Gee Kim, Jung-Won Lee, and In-Soo Kang. "Development on Silicon module with Cu-filled TSV and Integrated Passive Devices." International Symposium on Microelectronics 2010, no. 1 (January 1, 2010): 000385–91. http://dx.doi.org/10.4071/isom-2010-wa1-paper6.

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In recent years, market demands on more functionality, smaller form factor and higher speed is becoming strong increasingly. In order to come up with those, many new technologies are emerging in the market. Among them, TSV and IPD are key enabling technology to meet market demands because TSV interconnection can provide wider bandwidth and high transmission speed due to vertical one compared to wire bonding technology and IPD can provide higher performance, more area saving to be assembled and small form factor compared to discrete passive components. In this work, we have developed the silicon module with Cu filled TSV and LPF [Low Pass Filter] in combination with Inductor and MIM Capacitor integrated at the surface of silicon interposer. And also have made very small form factor package with less than 0.8mm in thickness including 2 chips mounted side by side at the silicon interposer. In order to make silicon module with Cu filled TSV, we have evaluated and optimized via etch, thin-film deposition and via filling process which characterized a high uniformity via etch, good step-coverage and void-free at 200um in depth and 65um in TSV diameter at wafer-level. Furthermore, the IL [Insertion loss] of 0.14dB and 0.11dB for 3rd order filter and 5th order filter at 2.4 GHz respectively was achieved through both front-end process capable of high uniformity insulator deposition and back-end process capable of forming thick Cu RDL [Redistribution]. A good matching between measured value and simulated one using 3D simulator was achieved. We are currently running component reliability tests for Preconditioning, TC, HTS and 85%/85. So test results will be discussed and submitted at the full manuscript.
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Liu, Kai, YongTaek Lee, HyunTai Kim, and MaPhooPwint Hlaing. "Mobile Device Passive Integration from Wafer Process." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 000878–86. http://dx.doi.org/10.4071/isom-2011-tha1-paper1.

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In this paper, we present some passive components made from silicon substrate technology (Integrated Passive Device process) and integration schemes using these components for RF applications. RF decoupling capacitors from this process are characterized on ESR and ESL performance. Functional blocks (filters, baluns, diplexers, matching, etc) made from the IPD process, have shown good electrical performance with small form-factor features. The thin profiles from the IPDs make them very suitable to be used inside laminate and QFN packages. System-in-Packages or multiple-chip-modules using IPD approaches may have significant size reduction. The low profiles and the small form-factors of the IPDs result in less cross-talk between the IPDs and their nearby components (chips, SMDs, and routing traces, etc), and therefore it is easier to maintain signal integrity for packages.
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Zhu, Bao-Hua, Nam-Young Kim, Zhi-Ji Wang, and Eun-Seong Kim. "On-Chip Miniaturized Bandpass Filter Using GaAs-Based Integrated Passive Device Technology For L-Band Application." Materials 12, no. 18 (September 19, 2019): 3045. http://dx.doi.org/10.3390/ma12183045.

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In this work, a miniaturized bandpass filter (BPF) constructed of two spiral intertwined inductors and a central capacitor, with several interdigital structures, was designed and fabricated using integrated passive device (IPD) technology on a GaAs wafer. Five air-bridge structures were introduced to enhance the mutual inductive effect and form the differential geometry of the outer inductors. In addition, the design of the differential inductor combined with the centrally embedded capacitor results in a compact construction with the overall size of 0.037λ0 × 0.019λ0 (1537.7 × 800 μm2) where λ0 is the wavelength of the central frequency. For the accuracy evolution of the equivalent circuit, the frequency-dependent lumped elements of the proposed BPF was analyzed and modeled through the segment method, mutual inductance approach, and simulated scattering parameters (S-parameters). Afterward, the BPF was fabricated using GaAs-based IPD technology and a 16-step manufacture flow was accounted for in detail. Finally, the fabricated BPF was wire-bonded with Au wires and packaged onto a printed circuit board for radio-frequency performance measurements. The measured results indicate that the implemented BPF possesses a center frequency operating at 2 GHz with the insertion losses of 0.38 dB and the return losses of 40 dB, respectively, and an ultrawide passband was achieved with a 3-dB fraction bandwidth of 72.53%, as well. In addition, a transmission zero is located at 5.32 GHz. Moreover, the variation of the resonant frequency with different inductor turns and metal thicknesses was analyzed through the simulation results, demonstrating good controllability of the proposed BPF.
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Lau, J. H., C. J. Zhan, P. J. Tzeng, C. K. Lee, M. J. Dai, H. C. Chien, Y. L. Chao, et al. "Feasibility Study of a 3D IC Integration System-in-Packaging (SiP) from a 300 mm Multi-Project Wafer (MPW)." Journal of Microelectronics and Electronic Packaging 8, no. 4 (October 1, 2011): 171–78. http://dx.doi.org/10.4071/imaps.306.

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The feasibility of a 3D IC integration SiP has been demonstrated in this investigation. The heart of this SiP is a TSV (through-silicon via) interposer with an RDL (redistribution layer) on both sides, IPD (integrated passive devices), and SS (stress sensors). This interposer is used to support (with microbumps) a stack of four memory chips with TSVs, one thermal chip with heater and one mechanical chip with SS, and is then overmolded on its top side for pick and place purposes. The interposer's bottom side is attached to an organic substrate (with ordinary lead-free solder bumps), which is lead-free solder-balled on a PCB (printed circuit board). Key enabling technologies such as TSV etching, chemical mechanical polishing (CMP), thin-wafer handling, thermal management, and microbumping, assembly, and reliability are highlighted.
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Lau, J. H., C.-J. Zhan, P.-J. Tzeng, C.-K. Lee, M.-J. Dai, H.-C. Chien, Y.-L. Chao, et al. "Feasibility Study of a 3D IC Integration System-in-Packaging (SiP) from a 300mm Multi-Project Wafer (MPW)." International Symposium on Microelectronics 2011, no. 1 (January 1, 2011): 000446–54. http://dx.doi.org/10.4071/isom-2011-wa1-paper1.

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The feasibility of a 3D IC integration SiP has been demonstrated in this investigation. The heart of this SiP is a TSV (through-silicon via) interposer with RDL (redistribution layer) on both sides, IPD (integrated passive devices) and SS (stress sensors). This interposer is used to support (with microbumps) a stack of four memory chips with TSVs, one thermal chip with heater and one mechanical chip with SS, and then overmolded on its top side for pick and place purposes. The interposer’s bottom-side is attached to an organic substrate (with ordinary lead-free solder bumps), which is lead-free solder-balled on a PCB (printed circuit board). Key enabling technologies such as TSV etching, chemical mechanical polishing (CMP), thin-wafer handling, thermal management, and microbumping, assembly and reliability are highlighted.
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Dissertations / Theses on the topic "Integrated Passive Devices IPD"

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Li, Heli. "RF LOW PASS FILTER DESIGN AND FABRICATION USING INTEGRATED PASSIVE DEVICE TECHNOLOGY." Master's thesis, University of Central Florida, 2006. http://digital.library.ucf.edu/cdm/ref/collection/ETD/id/4340.

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In this thesis, the whole process of design a low pass filter (LPF) for the wireless communication application has been presented. Integrated passive device technology based on GaAs substrate has been utilized to make the LPF. Schematic simulation and electromagnetic simulations are extensively used in the design process. EM simulation is used in the selection of layout design and processing parameters for design optimization of both the inductors and IPD harmonic filters. The effective use of EM simulation enables us to realize the successful development of high performance harmonic filters. To make the optimization be more flexible and also for a deeper understanding of the optimization theory, optimization using genetic algorithm is also implemented. The weight of each targets are adjustable, and a non-uniformly distributed goal for the harmonic rejection range is introduced to achieve better optimization results. The embedded LPF is built and measurement results show good agreement with the simulation data. This kind of very compact, high performance harmonic filters can be used in radio transceiver front-end modules. The realized harmonic filters have insertion loss less than 0.6 dB and harmonic rejections greater than 25 dB with a compact die size of 0.8 mm2.
M.S.E.E.
School of Electrical Engineering and Computer Science
Engineering and Computer Science
Electrical Engineering
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Cayron, Audrey. "Intégration de dispositifs passifs 3D compacts et performants.Application à la réalisation d’une matrice de Butler 4×4 en bande Ka." Thesis, Toulouse, INSA, 2020. http://www.theses.fr/2020ISAT0006.

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La complexité des systèmes RF intégrés pour les applications sans fil grand public s’accroit, et exige de revisiter l’intégration des circuits passifs RF et microondes. De nouvelles solutions offrant plus de compacité et de performance doivent être recherchées, avec un coût de fabrication qui doit rester faible. Parmi celles-ci, une filière technologique 3D de type « Integrated Passive Devices » (IPD) est développée au LAAS CNRS et par la société 3DiS Technologies depuis plusieurs années. Après avoir démontré les capacités de la technologie pour l’intégration de solénoïdes extrêmement compacts et performants, le travail présenté dans ce manuscrit ajoute l’intégration des condensateurs pour faire évoluer la technologie vers la fabrication de fonctions passives RF complexes.Le manuscrit s’articule en trois chapitres. Une première partie dresse une revue des procédés technologiques existants pour la fabrication de systèmes RF et met en évidence l’importance de disposer de composants passifs compacts et performants pour pouvoir intégrer les circuits MMIC. Dans ce contexte, nous présentons les avantages apportés par une solution d’intégration 3D bas coût telle que celle proposée. Dans une deuxième partie, nous présentons le développement de condensateurs Métal Isolant Métal (MIM). Les caractérisations montrent que les condensateurs présentent des performances équivalentes à celles recensées dans la littérature avec de très bons coefficients de qualités. Nous appliquons ensuite la technologie 3D complète à la réalisation de deux transformateurs adaptés en impédance 50 ohms en utilisant des condensateurs. Le procédé technologique de fabrication des deux circuits est décrit. Dans la bande d’adaptation, les circuits fabriqués et caractérisés affichent des pertes en transmission équivalentes aux pertes théoriques minimales estimées à partir du gain disponible maximum des transformateurs. Ces résultats confirment les bonnes performances des condensateurs MIM développés qui introduisent des pertes minimes pour les circuits fabriqués. Aucun problème de fabrication n’est relevé pour les transformateurs adaptés, ce qui permet de valider le procédé technologique complet pour l’intégration de condensateurs et de solénoïdes.Sur la base de ces résultats, le dernier chapitre est consacré au développement d’une matrice de Butler 4×4 destinée à piloter un faisceau de quatre éléments rayonnants en visant la 5G comme contexte applicatif. Des pertes en transmissions inférieures à 3,5 dB et un écart sur les déphasages en sorties de 16° sont relevés pour une large bande passante de 24 GHz à 29 GHz. Ces résultats de mesure sont à l’état de l’art et surpassent les solutions existantes, en particulier au niveau de la surface occupée de seulement 0,84 mm2. Ces résultats démontrent le potentiel de la technologie 3D à réaliser un compromis innovant entre densité d’intégration et performances
The complexity of embedded RF systems in consumer wireless applications is increasing, and requires to improve the integration of RF and microwave passive circuits. New solutions that offer more compactness and performance have to be developed, while maintaining a low manufacturing cost. Among Integrated Passive Devices (IPD) technologies, a 3-D technology has been developed at the LAAS CNRS and by 3DiS Technologies for several years. Results demonstrate that the manufactured solenoids exhibit high compactness and high-performance. This PhD thesis aims to develop the integration process of capacitors in order to evolve the technology towards the fabrication of complex passive RF functions.The manuscript is divided into three chapters. The first chapter reviews the technological processes that enable the manufacture of RF systems and highlights the challenges for integrating high-performance passive components. It also presents the advantages of a low-cost 3-D integration solution such as the one proposed. In the second chapter, we present the development of Metal Insulator Metal (MIM) capacitors. The characterization result show that capacitors present performances equivalent to those identified in the literature with high quality factors. We then manufacture two transformers matched to 50 ohms using capacitors. The technological process is described. The manufactured and measured circuits show that transmission losses are close to those obtained at the maximum available gain of the transformers. These results confirm the good performance of the developed capacitors since they introduce minimal losses for the manufactured circuits. No technological problems are encountered during the manufacturing of the two transformers, which validates the complete technological process for the integration of capacitors and solenoid.Based on these results, we present in the last chapter the development of a 4×4 Butler matrix dedicated to 5G beamforming applications. In a large bandwidth ranging from 24 GHz to 29 GHz, insertion losses for the four outputs of the matrix are under 3.5 dB and the phase difference between the outputs are reached with a deviation of less than 16°. The measured results are at the state of the art and overcome those of the existing IPD solutions, in particular for the occupied aera that does not exceed 0.84 mm2. These performances allow us to conclude on the potential of 3-D IPD technology to achieve an excellent compromise between integration density and performance
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Li, Liangyu. "Experimental Investigation of Integrated Tunable Passive Microwave Devices." University of Dayton / OhioLINK, 2020. http://rave.ohiolink.edu/etdc/view?acc_num=dayton1607337154651345.

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Park, Jae Yeong. "Packaging-compatible micromachined magnetic devices : integrated passive components and modules." Diss., Georgia Institute of Technology, 1997. http://hdl.handle.net/1853/16385.

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Lo, Chi Chuen. "Integrated silicon optical bench with passive alignment features for three-dimensional optical interconnect /." View abstract or full-text, 2004. http://library.ust.hk/cgi/db/thesis.pl?MECH%202004%20LO.

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Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004.
Includes bibliographical references (leaves 118-122). Also available in electronic version. Access restricted to campus users.
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Syahriar, Ary. "Passive integrated optical devices formed by electron beam irradiation of silica-on-silicon layers." Thesis, Imperial College London, 1998. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.481291.

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Lahti, M. (Markku). "Gravure offset printing for fabrication of electronic devices and integrated components in LTCC modules." Doctoral thesis, University of Oulu, 2008. http://urn.fi/urn:isbn:9789514288944.

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Abstract The thesis is concerned with the development of gravure-offset-printing and low temperature co-fired ceramic (LTCC) technologies for the miniaturisation of electronic devices and components. The development work has been verified by several applications. Several aspects of gravure-offset-printing have to be optimised in order to make it suitable for fine-line printing and these have been addressed in the study with a focus on the printing inks and plates. Gravure-offset-printing inks were developed from commercial thick-film pastes. The effects of different ink characteristics on some properties of conductor lines, such as line width and resistivity, were studied. The dependence of the conductor lines on the quality of the engravings in the printing plates was also studied. The narrowest line widths obtained were about 30 μm with an accuracy of ±5 μm. Various LTCC compositions and processing steps involved in the production of integrated electronic devices, and the properties of several fabricated devices are discussed. The devices include inductors, band-pass filters and resistors for the 1–2 GHz frequency range. Miniaturisation has been the main focus of attention. For example, the integration of high-permittivity tapes in addition to low-permittivity tapes has made the miniaturisation of filter structures possible. Compatibility between these tapes during firing was found to be good. LTCC technology was further developed by adapting a modified LTCC-on-metal (LTCC-M) approach. A traditional way of guiding heat away from a component is to place a heat-sink under the component and utilise thermal vias and solder balls. In this study high- and low-permittivity tapes were attached directly on a heat-sink. Different heat-sink options were evaluated and the best performance was achieved with an AlN heat-sink which was deposited by screen-printing a Au layer on it. High-power chips were attached directly on the heat-sink through cavities in the LTCC tapes. This approach also restricted the shrinkage of the LTCC tapes. The fabricated test structures and components proved the viability of the approach although the compatibility between the pastes and tapes was not optimal.
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Borden, Bradley W. Wang Shuping. "A study of the laser direct writing for all polymer single mode passive optical channel waveguide devices." [Denton, Tex.] : University of North Texas, 2008. http://digital.library.unt.edu/permalink/meta-dc-9805.

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Zanzi, Andrea. "Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects." Doctoral thesis, Universitat Politècnica de València, 2020. http://hdl.handle.net/10251/149377.

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[EN] Optical technologies are the backbone of modern communication systems providing high-speed access to the Internet, efficient inter and intra-data center interconnects and are expending towards growing research fields and new markets such as satel- lite communications, LIDARs (Laser Imaging Detection and Ranging) applications, Neuromorphic computing, and programable photonic circuits, to name a few. Be- cause of its maturity and low-cost, silicon photonics is being leveraged to allow these new technologies to reach their full potential.As a result, there is a strong need for innovative, high-speed and energy-efficient photonic integrated building blocks on the silicon platform to increase the readiness of silicon photonic integrated circuits. The work developed and presented in this thesis is focused on the design and char- acterization of advanced passive and active devices, for photonic integrated circuits. The thesis consists of three main chapters as well as a motivation and concluding sections exposing the rationale and the accomplishments of this work. Chapter one describes the design and characterization of an electro-optical Mach-Zehnder mod- ulator embedded in highly efficient vertical pn junction exploiting the free-carrier dispersion effect in the O-band.. Chapter two is devoted to the design and charac- terization of a novel geometry of asymmetrical multimode interference device and its implementation in a Mach-Zehnder modulator. Chapter three is dedicated to the design and characterization of innovative 1-dimensional photonic crystal designs for slow- lightmodulation applications. An extensive analysis of the main trade-off arising from the use of slow light is presented.
[ES] Las tecnologías ópticas son el eje vertebrador de los sistemas de comunicación mod- ernos que proporcionan acceso de alta velocidad a la Internet, interconexiones efi- cientes entre centros de datos y dentro de ellos. Además, se están expandiendo hacia campos de investigación crecientes y nuevos mercados como son las aplicaciones de comunicaciones por satélite, los LIDAR (Laser Imaging Detection and Ranging), la computación neuromórfica y los circuitos fotónicos programables, por nombrar algunos. La fotónica de silicio está considerada y aceptada ampliamente como una de las tecnologías clave para que dichas aplicaciones puedan desarrollarse. Como resultado, hay una fuerte necesidad de estructuras fotónicas básicas integradas que sean innovadoras, que soporten altas velocidades de transmisión y que sean más eficientes en términos de consumo de potencia, a fin de aumentar la capacidad de los circuitos integrados fotónicos de silicio. El trabajo desarrollado y presentado en esta tesis se centra en el diseño y la car- acterización de dispositivos avanzados pasivos y activos, para circuitos fotónicos integrados. La tesis consta de tres capítulos principales, así como de sendas sec- ciones de motivación y conclusiones que exponen los fundamentos y los logros de este trabajo. El capítulo uno describe el diseño y la caracterización de un modulador electro-óptico Mach-Zehnder incorporado en una unión pn vertical altamente eficien- ciente que explota el efecto de dispersión de plasma en banda O. El capítulo dos está dedicado al diseño y caracterización de una nueva geometría de dispositivo de interferencia multimodo asimétrico y su aplicación en un modulador Mach-Zehnder. El capítulo tres está dedicado al diseño y caracterización de innovadores cristales fotónicos unidimensionales para aplicaciones de modulación con luz lenta. Se pre- senta un amplio análisis de los principales retos derivados del uso de la misma.
[CA] Les tecnologies òptiques són l'eix vertebrador d'aquells sistemes de comunicació moderns que proporcionen accés d'alta velocitat a la Internet, així com intercon- nexions eficients inter i entre centres de dades. A més a més, s'estan expandint cap a camps d'investigació creixents i nous mercats com són les aplicacions de co- municacions per satèl·lit, els LIDAR (Laser Imaging Detection and Ranging), la computació neuromòrfica i els circuits fotònics programables, entre d'altres. La fotònica de silici és considerada i acceptada àmpliament com una de les tecnologies clau i necessàries perquè aquestes aplicacions puguen desenvolupar-se. Per aquest motiu, es fa necessària l'existència d'estructures fotòniques bàsiques integrades que siguen innovadores, que suporten altes velocitats de transmissió i que siguen més eficients en termes de consum de potència, a fi d'augmentar la capacitat dels cir- cuits integrats fotònics de silici. El treball desenvolupat i presentat en aquesta tesi se centra en el disseny i la caracterització de dispositius avançats passius i actius, per a circuits fotònics integrats. La tesi consta de tres capítols principals, així com d'una secció de motivació i una altra de conclusions que exposen els fonaments i els assoliments d'aquest treball. El capítol u descriu el disseny i la caracterització d'un modulador electro-òptic Mach-Zehnder incorporat en una unió pn vertical d'alta efi- ciència que explota l'efecte de dispersió de plasma en la banda O. El capítol dos està dedicat al disseny i caracterització d'una nova geometria de dispositiu d'interferència multimode asimètric així com a la seua aplicació en un modulador Mach-Zehnder. El capítol tres està dedicat al disseny i caracterització d'innovadors cristalls fotònics unidimensionals per a aplicacions de modulació amb llum lenta. S'inclou també una anàlisi detallada dels principals reptes derivats de l'ús d'aquest tipus de llum.
I want to thank you the Generelitat Valenciana and the European Project L3MATRIX for the funding, without them my doctorate would not taken place.
Zanzi, A. (2020). Passive and active silicon photonics devices at TLC telecommunication wavelengths for on-chip optical interconnects [Tesis doctoral no publicada]. Universitat Politècnica de València. https://doi.org/10.4995/Thesis/10251/149377
TESIS
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Borden, Bradley W. "A Study of Laser Direct Writing for All Polymer Single Mode Passive Optical Channel Waveguide Devices." Thesis, University of North Texas, 2008. https://digital.library.unt.edu/ark:/67531/metadc9805/.

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The objective of this research is to investigate the use of laser direct writing to micro-pattern low loss passive optical channel waveguide devices using a new hybrid organic/inorganic polymer. Review of literature shows previous methods of optical waveguide device patterning as well as application of other non-polymer materials. System setup and design of the waveguide components are discussed. Results show that laser direct writing of the hybrid polymer produce single mode interconnects with a loss of less 1dB/cm.
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Books on the topic "Integrated Passive Devices IPD"

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A, Haus Hermann, ed. Passive components for dense optical integration. Boston: Kluwer Academic Publishers, 2002.

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Nejhad, M. N. Ghasemi. Active and passive smart structures and integrated systems 2010: 8-11 March 2010, San Diego, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2010.

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Ahmadian, Mehdi. Active and passive smart structures and integrated systems 2009: 9-12 March 2009, San Diego, California, United States. Edited by Ghasemi Nejhad, M. N. (Mehrdad N.), SPIE (Society), Intelligent Materials Forum (Mitō Kagaku Gijutsu Kyōkai), American Society of Mechanical Engineers, Jet Propulsion Laboratory (U.S.), and National Science Foundation (U.S.). Bellingham, Wash: SPIE, 2009.

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Nejhad, M. N. Ghasemi. Active and passive smart structures and integrated systems 2011: 7-10 March 2011, San Diego, California, United States. Edited by SPIE (Society). Bellingham, Wash: SPIE, 2011.

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Nejhad, M. N. Ghasemi. Active and passive smart structures and integrated systems 2010: 8-11 March 2010, San Diego, California, United States. Bellingham, Wash: SPIE, 2010.

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Ghasemi Nejhad, M. N. (Mehrdad N.), SPIE (Society), Intelligent Materials Forum (Mitō Kagaku Gijutsu Kyōkai), American Society of Mechanical Engineers, Jet Propulsion Laboratory (U.S.), and National Science Foundation (U.S.), eds. Active and passive smart structures and integrated systems 2009: 9-12 March 2009, San Diego, California, United States. Bellingham, Wash: SPIE, 2009.

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Integrated Photonics Research Topical Meeting. (1991 Monterey, Calif.). Integrated photonics research: Summaries of papers presented at the Integrated Photonics Research Topical Meeting, April 9-11, 1991, Monterey, California ; including Workshop on Active and Passive Fiber Components. Washington, D.C: Optical Society of America, 1991.

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Electronics technology handbook. New York: McGraw-Hill, 1999.

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Nino, Juan C., Fred Roozeboom, Susan Trolier-McKinstry, Paul Muralt, and David LaVan. Heterogeneous Integration of Materials for Passive Components and Smart Systems: Volume 969. University of Cambridge ESOL Examinations, 2014.

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Heterogeneous Integration of Materials for Passive Components and Smart Systems: Symposium Held November 27-29, 2006, Boston, Massachusetts, U.S.A. (Materials Research Society Symposium Proceedings). Materials Research Society, 2007.

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Book chapters on the topic "Integrated Passive Devices IPD"

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Tabib-Azar, M. "Passive Optical Devices." In Integrated Optics, Microstructures, and Sensors, 71–97. Boston, MA: Springer US, 1995. http://dx.doi.org/10.1007/978-1-4615-2273-7_3.

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Kévorkian, Antoine. "Passive and Active Glass Integrated Optics Devices." In Springer Series in Photonics, 197–261. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-642-56466-6_6.

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Niknejad, Ali M., Sohrab Emami, Chinh Doan, Babak Heydari, and Mounir Bohsali. "Design and Modeling of Active and Passive Devices." In Series on Integrated Circuits and Systems, 59–108. Boston, MA: Springer US, 2008. http://dx.doi.org/10.1007/978-0-387-76561-7_3.

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Nassiopoulou, Androula G., Panagiotis Sarafis, Jean-Pierre Raskin, Henza Issa, and Phillippe Ferrari. "Substrate Technologies for Silicon-Integrated RF and mm-Wave Passive Devices." In Beyond-CMOS Nanodevices 1, 373–417. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2014. http://dx.doi.org/10.1002/9781118984772.ch13.

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Barklage, Alexander, and Rolf Radespiel. "Interaction of Wake and Propulsive Jet Flow of a Generic Space Launcher." In Notes on Numerical Fluid Mechanics and Multidisciplinary Design, 129–43. Cham: Springer International Publishing, 2020. http://dx.doi.org/10.1007/978-3-030-53847-7_8.

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Abstract This work investigates the interaction of the afterbody flow with the propulsive jet flow on a generic space launcher equipped with two alternative nozzle concepts and different afterbody geometries. The flow phenomena are characterized by experimental measurements and numerical URANS and LES simulations. Investigations concern a configuration with a conventional truncated ideal contour nozzle and a configuration with an unconventional dual-bell nozzle. In order to attenuate the dynamic loads on the nozzle fairing, passive flow control devices at the base of the launcher main body are investigated on the configuration with TIC nozzle. The nozzle Reynolds number and the afterbody geometry are varied for the configuration with dual-bell nozzle. The results for integrated nozzles show a shift of the nozzle pressure ratio for transition from sea-level to altitude mode to significant lower levels. The afterbody geometry is varied including a reattaching and non-reattaching outer flow on the nozzle fairing. Investigations are performed at supersonic outer flow conditions with a Mach number of $$Ma_\infty =3$$. It turns out, that a reattachment of the outer flow on the nozzle fairing leads to an unstable nozzle operation.
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Maloratsky, Leo G. "Diode Control Devices." In Passive RF & Microwave Integrated Circuits, 237–65. Elsevier, 2004. http://dx.doi.org/10.1016/b978-075067699-1/50011-0.

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Al-Azzawi, Abdul. "Manufacturing of Passive Fiber Optic Devices." In Advanced Manufacturing for Optical Fibers and Integrated Photonic Devices, 107–13. CRC Press, 2017. http://dx.doi.org/10.1201/b18749-7.

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Wang, Shyh. "Chapter 1 Principles and Characteristics of Integratable Active and Passive Optical Devices." In Lightwave Communications Technology - Integrated Optoelectronics, 1–202. Elsevier, 1985. http://dx.doi.org/10.1016/s0080-8784(08)62965-8.

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Yeh, Chai. "Introduction to Optical Fiber Sensors, Passive Applications, and Integrated Devices." In Handbook of Fiber Optics, 277. Elsevier, 1990. http://dx.doi.org/10.1016/b978-0-12-770455-5.50018-3.

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Benech, Philippe, Jean-Marc Duchamp, Philippe Ferrari, Darine Kaddour, Emmanuel Pistono, Tan Phu, Pascal Xavier, and Christophe Hoarauand Jean-Daniel Arnoul. "Integrated Silicon Microwave and Millimeterwave Passive Components and Functions." In Microwave and Millimeter Wave Technologies from Photonic Bandgap Devices to Antenna and Applications. InTech, 2010. http://dx.doi.org/10.5772/9050.

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Conference papers on the topic "Integrated Passive Devices IPD"

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Chang, Y. C., P. Y. Wang, S. H. Hsu, Y. T. Chang, C. K. Chen, and D. C. Chang. "Impact and Improvement of Resistor Process Variation on RF Passive Circuit Design in Integrated Passive Devices (IPD) Technology." In 2015 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2015. http://dx.doi.org/10.7567/ssdm.2015.ps-2-14.

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Kim, Hyun-Tai, Kai Liu, Robert C. Frye, Yong-Taek Lee, Gwang Kim, and Billy Ahn. "Design of compact power divider using integrated passive device (IPD) technology." In 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009). IEEE, 2009. http://dx.doi.org/10.1109/ectc.2009.5074278.

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Po-Hao Chang, Kevin Chiang, Jeng-Yuan Lai, and Yu-Po Wang. "Advanced integrated passive device (IPD) low pass filter designs on WLCSP." In 2009 4th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT). IEEE, 2009. http://dx.doi.org/10.1109/impact.2009.5382162.

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Neyer, A. "LOW- COST PASSIVE POLYMER DEVICES." In Integrated Photonics Research. Washington, D.C.: OSA, 1994. http://dx.doi.org/10.1364/ipr.1994.fg1.

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Yin-Cheng Chang, Ping-Yi Wang, Shawn S. H. Hsu, Ta-Yeh Lin, Chao-Ping Hsieh, and Da-Chiang Chang. "A V-band CPW bandpass filter with controllable transmission zeros in integrated passive devices (IPD) technology." In 2016 IEEE/MTT-S International Microwave Symposium (IMS). IEEE, 2016. http://dx.doi.org/10.1109/mwsym.2016.7540147.

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Prashant, Meenakshi, Kai Liu, and Seung Wook Yoon. "Integrated passive devices (IPD) integration with eWLB (embedded wafer level BGA) for high performance RF applications." In 2010 12th Electronics Packaging Technology Conference - (EPTC 2010). IEEE, 2010. http://dx.doi.org/10.1109/eptc.2010.5702724.

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Weinert, C. M., and H. Heidrich. "Vectorial Simulation of Passive Mode Converter Devices on InP." In Integrated Photonics Research. Washington, D.C.: OSA, 1992. http://dx.doi.org/10.1364/ipr.1992.md7.

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Kim, Jaeyoun, Kim A. Winick, and Catalin Florea. "Passive and active glass waveguide devices utilizing silicon overlay grating." In Integrated Photonics Research. Washington, D.C.: OSA, 2002. http://dx.doi.org/10.1364/ipr.2002.ithi1.

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Lee, Yong-Taek, Kai Liu, Robert Frye, Hyun-Tai Kim, Gwang Kim, and Billy Ahn. "Ultra-wide-band (UWB) band-pass-filter using integrated passive device (IPD) technology for wireless applications." In 2009 IEEE 59th Electronic Components and Technology Conference (ECTC 2009). IEEE, 2009. http://dx.doi.org/10.1109/ectc.2009.5074295.

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Wu, Sung-Mao, Wang-Yu Lin, Kao-Yi Wang, Chien-Hsiang Huang, and Wen-Kuan Yeh. "The high balance symmetric balun for WLAN and WiMAX application using the Integrated Passive Device (IPD) technology." In High Density Packaging (ICEPT-HDP). IEEE, 2009. http://dx.doi.org/10.1109/icept.2009.5270803.

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