Relevant bibliographies by topics / Interconnects (Integrated circuit technology) Copper

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  2. Dissertations / Theses
  3. Books
  4. Book chapters
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Academic literature on the topic 'Interconnects (Integrated circuit technology) Copper'

Author: Grafiati
Published: 4 June 2021
Last updated: 18 February 2022

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Journal articles on the topic "Interconnects (Integrated circuit technology) Copper"

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Sahoo, Manodipan, and Hafizur Rahaman. "Analysis of Crosstalk-Induced Effects in Multilayer Graphene Nanoribbon Interconnects." Journal of Circuits, Systems and Computers 26, no. 06 (March 5, 2017): 1750102. http://dx.doi.org/10.1142/s021812661750102x.

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Crosstalk effects in multilayer graphene nanoribbon (GNR) interconnects for the future nanoscale integrated circuits are investigated with the help of ABCD parameter matrix approach for intermediate- and global-level interconnects at 11[Formula: see text]nm and 8[Formula: see text]nm technology nodes. The worst-case crosstalk-induced delay and peak crosstalk noise voltages are derived for both neutral and doped zigzag GNR interconnects and compared to those of conventional copper interconnects. The worst-case crosstalk delays for perfectly specular, doped multilayer GNR interconnects are less than 4% of that of copper interconnects for 1[Formula: see text]mm long intermediate interconnects and less than 7% of that of copper interconnects for 5[Formula: see text]mm long global interconnects at 8[Formula: see text]nm node. As far as the worst-case peak crosstalk noise voltage is concerned, neutral GNR interconnects are slightly better performing than their doped counterparts. But from the perspective of overall noise contribution, doped GNR interconnects outperform neutral ones for all the cases. Finally, our analysis shows that from the signal integrity perspective, perfectly specular, doped multilayer zigzag GNR interconnects are a suitable alternative to copper interconnects for the future-generation integrated circuit technology.
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Plovie, Bart, Sheila Dunphy, Kristof Dhaenens, Steven Van Put, Bjorn Vandecasteele, Frederick Bossuyt, and Jan Vanfleteren. "2.5D Smart Objects Using Thermoplastic Stretchable Interconnects." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000868–73. http://dx.doi.org/10.4071/isom-2015-thp51.

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This contribution describes the technology used to produce thermoplastically deformable electronics, based on flexible circuit board technology, to achieve low-cost 2.5D free-form rigid smart objects. These one-time deformable circuits employ a modified version of the previously developed meander-based “polymer-last” technology for dynamically stretchable elastic circuits. This is readily achieved by substituting the dynamically stretchable elastomeric materials (e.g. silicone) with thermoplastic polymers (e.g. polycarbonate). Afterwards the circuit is given its final form using widely available thermoforming techniques, such as vacuum forming, where the material is heated above its glass transition temperature and drawn against a forming tool by a strong vacuum. After cooling down the thermoplastic retains its shape without inducing large internal stresses. The presented method allows for the production of these circuits on a flat substrate, using standard printed circuit board production equipment, with deformation only taking place afterwards; eliminating the need for large investments and reducing the cost of fabrication. Potential advantages over competitive methods are reductions in weight and material usage, decrease of mechanical complexity; lower tooling cost, increased resilience, and a higher degree of manufacturer independence due to adhering to standard industrial practices. This is realized by starting production from a flexible circuit board, manufactured by an industrial supplier using polyimide flexible copper clad laminate, which is attached to a temporary reusable carrier board through means of a silicone based high-temperature pressure sensitive adhesive. Through selective laser structuring the meander and island outlines of the flexible circuit are defined, without causing damage to the carrier board or pressure sensitive adhesive. After removing the residual material the circuit is assembled using high-temperature lead-free solder, made possible by the temporary carrier keeping the circuit in place at these elevated temperatures. The circuit is then transferred into a thermoplastic laminate, which is deformed into its final shape. After demonstrating the need for stretchable electronics for this application, this contribution describes the method used to design, fabricate, and test the first one-time deformable circuits manufactured using the presented technology. Using the initial set of observations a series of preliminary design rules is established, both for the circuit and choice of materials. The feasibility of this manufacturing method was then demonstrated through a small scale production run using lab scale equipment, where a large quantity of high power LEDs was integrated into a one-time deformable device made out of polystyrene and thermoplastic polyurethane. These devices were then tested by exposing them to real world conditions for several days.
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Karthikeyan, A., and P. S. Mallick. "Optimization Techniques for CNT Based VLSI Interconnects — A Review." Journal of Circuits, Systems and Computers 26, no. 03 (November 21, 2016): 1730002. http://dx.doi.org/10.1142/s0218126617300021.

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Interconnects plays an important role in integrated circuits. Copper is used as an interconnect material, but beyond 22[Formula: see text]nm technology node it faces many problems due to grain boundary scattering, and therefore carbon nanotubes are the most promising future interconnect materials. Various techniques and approaches such as driver sizing, repeater sizing, repeater insertion, wire sizing, wire spacing, shielding, boos table repeater were used by various researchers. Many of these techniques can be utilized for future CNT based VLSI interconnects as well. This paper presents a detailed discussion on the techniques and approaches of past, present and future relevant for interconnects of VLSI circuits.
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Kureshi, Abdul Kadir, and Mohd Hasan. "Analysis of CNT Bundle and Its Comparison with Copper Interconnect for CMOS and CNFET Drivers." Journal of Nanomaterials 2009 (2009): 1–6. http://dx.doi.org/10.1155/2009/486979.

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In nanoscale regime as the CMOS process technology continues to scale, the standard copper (Cu) interconnect will become a major hurdle for onchip communication due to high resistivity and electromigration. This paper presents the comprehensive evaluation of mixed CNT bundle interconnects and investigates their prospects as a low power high-speed interconnect for future nanoscale-integrated circuits. The performance of mixed CNT bundle interconnect is examined with carbon nanotube field effect transistor (CNFET) as a driver and compared with the traditional interconnect, that is, CMOS driver on Cu interconnect. All HSPICE simulations are carried out at operating frequency of 1 GHz and it is found that mixed CNT bundle interconnects with CNFET as the driver can potentially provide a substantial delay reduction over traditional interconnects implemented at 32 nm process technology. Similarly, the CNFET driver with mixed CNT bundle as interconnect is more energy efficient than the traditional interconnect at all supply voltages (VDD) from 0.9 V to 0.3 V.
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Sahoo, Manodipan, and Hafizur Rahaman. "Modeling of Crosstalk Induced Effects in Copper-Based Nanointerconnects: An ABCD Parameter Matrix-Based Approach." Journal of Circuits, Systems and Computers 24, no. 02 (November 27, 2014): 1540007. http://dx.doi.org/10.1142/s0218126615400071.

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Aggressive miniaturization has led to severe performance and signal integrity issues in copper-based interconnects in the nanometric regime. As a consequence, development of a proper analytical model for such interconnects is extremely important. In this work, an ABCD parameter matrix-based model is presented for fast and accurate estimation of crosstalk delay and noise for identically coupled copper-based nanointerconnect systems. Using the proposed model, the crosstalk delay and noise are estimated in copper based nanointerconnects for intermediate and global interconnects at the future integrated circuit technology nodes of 21 and 15 nm, respectively. Proposed model has been compared with SPICE and it is found that this model is almost 100% accurate as SPICE with respect to both the crosstalk delay as well as noise. Moreover, this model is as much as ~ 63 and ~ 155 times faster, respectively. From the crosstalk delay and noise analysis of unrepeated interconnects, it is observed that both delay and noise contribution will increase in scaled technology nodes. The same trend is observed also for the repeated interconnects. Also more number of repeaters and higher repeater sizes will be needed for delay minimization as we scale deeper. So as far as crosstalk induced effects are concerned, the copper interconnects will face a huge challenge to overcome in nanometer technology nodes.
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Rebelli, Shashank, and Bheema Rao Nistala. "A novel MRTD model for signal integrity analysis of resistive driven coupled copper interconnects." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 37, no. 1 (January 2, 2018): 189–207. http://dx.doi.org/10.1108/compel-12-2016-0521.

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Purpose This paper aims to model the coupled on-chip Copper (Cu) interconnects by using the multiresolution time-domain (MRTD) method. Design/methodology/approach The proposed model is a wavelet-based numerical method for analyzing signal integrity and propagation delay of coupled on-chip interconnects. Moreover, the dependency of crosstalk noise and delay on coupling parasitics (L12, C12) are analyzed. Findings The proposed MRTD method captures the behaviour of propagation delay and peak crosstalk noise on victim line against coupling parasitics, which is in close agreement with that of H simulation program with integrated circuit emphasis (HSPICE). The average error for the proposed model is less than 1 per cent with respect to HSPICE for the estimation of peak crosstalk noise voltage. Practical implications Simulations are performed using HSPICE and compared with those performed using the proposed MRTD method for global interconnect length with 130-nm technology, where the computations of the proposed model are carried out using Matlab. Originality/value The MRTD method with its unique features is tailored for modelling interconnects. To build further credence to this and its profound existence in the latest state-of-art works, simulations of crosstalk noise and propagation delay, for coupled Cu interconnect lines, using MRTD and finite-difference time-domain (FDTD) are executed. The results illustrated the dominance of MRTD method over FDTD in terms of accuracy.
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Sharma, Himanshu, and Karmjit Singh Sandha. "Impact of Intercalation Doping on the Conductivity of Multi-Layer Graphene Nanoribbon (MLGNR) in On-Chip Interconnects." Journal of Circuits, Systems and Computers 29, no. 12 (February 5, 2020): 2050185. http://dx.doi.org/10.1142/s0218126620501856.

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Graphene nanoribbons are considered potentially suitable and have exhibited excellent results in on-chip interconnects. In order to evaluate the different circuit impedance parameters of multi-layer graphene nanoribbons (MLGNRs), an electrical equivalent single conductor (ESC) along with an analytical model is proposed. On the basis of an electrical model, the impact of intercalation doping on the performance of MLGNRs at 32, 22, and 16[Formula: see text]nm technology nodes is discussed in this paper. Moreover, it is also discussed that the increase in intercalation doping increases the Fermi energy of the layers of the MLGNR, which increases its overall conductivity. The fact that the variation in the Fermi energy will have a considerable impact on the parasitic parameters of the MLGNR interconnect at three different technology nodes (32, 22, and 16[Formula: see text]nm) for variable global lengths (500–2000[Formula: see text][Formula: see text]m) is also analyzed. To estimate and compare the performance in terms of delay and power delay product (PDP) of MLGNRs, the simulation program with integrated circuit emphasis (SPICE) simulation tool is used. The results also show that the increase in the Fermi energy improves the performance of MLGNRs in terms of delay and PDP at three different technology nodes. Furthermore, a comparative analysis of all three technology nodes is performed with the copper interconnect, and it is revealed that the MLGNR interconnect is considered to be a prominent material for the next-generation on-chip very-large-scale integration interconnects.
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Khursheed, Afreen, and Kavita Khare. "Designing dual-chirality and multi-Vt repeaters for performance optimization of 32 nm interconnects." Circuit World 46, no. 2 (January 13, 2020): 71–83. http://dx.doi.org/10.1108/cw-06-2019-0060.

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Purpose This paper is an unprecedented effort to resolve the performance issue of very large scale integrated circuits (VLSI) interconnects encountered because of the scaling of device dimensions. Repeater interpolation technique is an effective approach for enhancing speed of interconnect network. Proposed buffers as repeater are modeled by using dual chirality multi-Vt technology to reduce delay besides mitigating average power consumption. Interconnects modeled with carbon nanotube (CNT) technology are compared with copper interconnect for various lengths. Buffer circuits are designed with both CNT and metal oxide semiconductor technology for comparison by using various combination of (CMOSFET repeater-Cu interconnect) and (CNTFET repeater-CNT interconnect). Compared to conventional buffer, ProposedBuffer1 saves dynamic power by 84.86%, leakage power by 88% and offers reduction in delay by 72%. ProposedBuffer2 brings about dynamic power saving of 99.94%, leakage power saving of 93%, but causes delay penalty. Simulation using Stanford SPICE model for CNT and silicon-field effective transistor berkeley short-channel IGFET Model4 (BSIM4) predictive technology model (PTM) for MOS is done in H simulation program with integrated circuit emphasis for 32 nm. Design/methodology/approach Usually, the dynamic power consumption dominates the total power, while the leakage power has a negligible effect. But with the scaling of device technology, leakage power has become one of the important factors of consideration in low power design techniques. Various strategies are explored to suppress the leakage power in standby mode. The adoption of a multi-threshold design strategy is an effective approach to improve the performance of buffer circuits without compromising on the delay and area overhead. Unlike MOS technology, to implement multi-Vt transistors in case of CNT technology is quite easy. It can be achieved by varying diameter of carbon nanotubes using chirality control. Findings An unprecedented approach is taken for optimizing the delay and power dissipation and hence drastically reducing energy consumption by keeping proper harmony between wire technology and repeater-buffer technology. This paper proposes two novel ultra-low power buffers (PB1 and PB2) as repeaters for high-speed interconnect applications in portable devices. PB1 buffer implemented with high-speed CML technique nested with multi-threshold (Vt) technology sleep transistor so as to improve the speed along with a reduction in standby power consumption. PB2 is judicially implemented by inserting separable sized, dual chirality P type carbon nanotube field effective transistors. The HSpice simulation results justify the correctness of schemes. Originality/value Result analysis points out that compared to conventional Cu interconnect, the CNT interconnects paired with Proposed CNTFET buffer designs are more energy efficient. PB1 saves dynamic power by 84.86%, reduces propagation delay by 72% and leakage power consumption by 88%. PB2 brings about dynamic power saving of 99.4%, leakage power saving of 93%, with improvement in speed by 52%. This is mainly because of the fact that CNT interconnect offers low resistance and CNTFET drivers have high mobility and ballistic mode of operation.
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Neirynck, J. M., R. J. Gutmann, and S. P. Murarka. "Copper/Benzocyclobutene Interconnects for Sub‐100 nm Integrated Circuit Technology: Elimination of High‐Resistivity Metallic Liners and High‐Dielectric Constant Polish Stops." Journal of The Electrochemical Society 146, no. 4 (April 1, 1999): 1602–7. http://dx.doi.org/10.1149/1.1391812.

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Wang, Juan, Ru Wang, and Guo Dong Chen. "Evaluation of the Stability on the New Alkaline Copper Bulk Slurry." Key Engineering Materials 645-646 (May 2015): 352–55. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.352.

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At present, the chemical mechanical polishing is the only means for global planarization of an integrated circuit. After the node of the integrated circuit processing comes into 45nm, the diameter of wafer is 300mm, and the copper interconnect layer is above the 10 layer. In the same time the new low dielectric constant materials are used to the integrated circuit processing. That requires the property of the slurry used in the chemical mechanical polishing stricter. So the domestic and international companies carry out a series research works. Based on investigation and research for many years, the new alkaline copper rough slurry has been developed by the teachers and students in the Hebei University of Technology. The slurry has advantages as disadvantages. The composition of cost-effective slurry is simple and the effect of chemical mechanical polishing is good. But its stability is poor. In order to improve the stability, the compositions of the slurry need to adjust.The new alkaline copper rough slurry composed by abrasive, surface, chelating agent, oxidizing agent and deionized water. Experiments investigate the influence rule of copper polishing rate by the concentration of abrasive, the content of surface, the content of oxidizing agent and the content of chelating agent. The conclusion is arrived. When the concentration of abrasive is 4%, the content of surfactant is 10ml/l, the content of chelating agent is 10ml/l and the content of oxidizing agent is 5ml/l, the copper polishing rate keep 5000 Å /min.
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Dissertations / Theses on the topic "Interconnects (Integrated circuit technology) Copper"

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Osborn, Tyler Nathaniel. "All-copper chip-to-substrate interconnects for high performance integrated circuit devices." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28211.

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Thesis (M. S.)--Chemical Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Kohl, Paul; Committee Member: Bidstrup Allen, Sue Ann; Committee Member: Fuller, Thomas; Committee Member: Hesketh, Peter; Committee Member: Hess, Dennis; Committee Member: Meindl, James.
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Wu, Fangyu. "Hydrogen-based plasma etch of copper at low temperature." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/43617.

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Although copper (Cu) is the preferred interconnect material due to its lower resistivity than aluminum (Al), Cu subtractive etching processes have not been developed at temperatures less than 180 °C, primarily due to the inability to form volatile etch products at low temperature. The conventional damascene technology avoids the need for subtractive etching of Cu by electroplating Cu into previously etched dielectric trenches/vias, followed by a chemical/mechanical planarization (CMP) process. However, a critical "size effect" limitation has arisen for damascene technology as a result of the continuing efforts to adhere to "Moore's Law". The size effect relates to the fact that the resistivity of damascene-generated lines increases dramatically as the line width approaches the sub-100 nm regime, where feature size is similar to the mean free path of electrons in Cu (40 nm). As a result, an alternative Cu patterning process to that of damascene may offer advantages for device speed and thus operation. This thesis describes investigations into the development of novel, fully-plasma based etch processes for Cu at low temperatures (10 °C). Initially, the investigation of a two-step etch process has been studied. This etch approach was based on a previous thermodynamic analysis of the Cu-Cl-H system by investigators at the University of Florida. In the first step, Cu films are exposed to a Cl₂ plasma to preferentially form CuCl₂, which is believed to be volatilized as Cu₃Cl₃ by subsequent exposure to a hydrogen (H₂) plasma (second step). Patterning of Cu films masked with silicon dioxide (SiO₂) layers in an inductively coupled plasma (ICP) reactor indicates that the H₂ plasma step in the two-step process is the limiting step in the etch process. This discovery led to the investigation of a single step Cu etch process using a pure H₂ plasma. Etching of blanket Cu films and Cu film patterning at 10°C, display an etch rate ~ 13 nm/min; anisotropic etched features are also observed. Comparison of H₂ plasma etching to sputtering of Cu films in argon (Ar) plasmas, indicates that both a chemical component and a physical component are involved in the etching mechanism. Additional studies using helium plasmas and variation of power applied to the plasma and etching surface demonstrate that the etch rate is controlled by reactive hydrogen species, ion bombardment flux and likely photon flux. Optical Emission Spectroscopy (OES) of the H₂ plasma during the Cu etching process detects Cu emission lines, but is unable to identify specific Cu etch products that desorb from the etching surface. Variation of Cu etch rates as a function of temperature suggests a change in mechanism for the removal of Cu over the temperature of -150 °C to 150 °C. OES analyses also suggest that the Cl₂ plasma step in the two-step process can inhibit Cu etching, since the subsequent H₂ (second) plasma step shows a time delay in film removal. Preliminary results of the etching of the SiO₂ mask material in H₂ plasmas with various intentionally introduced contaminants demonstrate the robustness of the H₂ plasma Cu etch process.
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Darmakkolla, Srikar Rao. "Copper Nanowires Synthesis and Self-Assembly for Interconnect Applications." PDXScholar, 2017. https://pdxscholar.library.pdx.edu/open_access_etds/4034.

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One-dimensional (1D) nanomaterial self-assembly offers an excellent approach to the fabrication of highly complex nanodevices. Despite considerable effort and research, precisely controlling the orientation and positioning of nanowires (NWs) on a large-scale area and assembling into a functional device is still a state of the art problem. This thesis focuses on the dimensionally controlled copper nanowires (Cu NWs) synthesis, and magnetic field assisted self-assembly of cupronickel nanowires (Cu/Ni NWs) into interconnect structures on a carbon doped silicon dioxide (CDO) wafer. CDO is a low dielectric constant (k) material used for copper interconnects in multilayered complex integrated circuits (ICs). Here, a strong affinity of copper (Cu) and nickel (Ni) to thiol (-SH) functional groups were exploited to strongly adhere the nanowires (Cu/Ni NWs) onto the CDO substrate. Thiol (-SH) functionalization of the CDO surface was achieved via a series of reactions involving (1) esterification of the surface exposed ≡Si-OH functional group to its triflate (≡Si-O-Tf), (2) reduction of triflate to ≡Si-H using DIBAL-H, and (3) hydrosilylation of ≡Si-H using 2-propene thiol (≡Si-(CH2)3-SH) in a photochemical reaction. The thiol functionalization of CDO surface enhances the interaction of Cu/Ni NWs with strong chemical bonds. The same reaction scheme was also used in the functionalization of the hydrophilic (Si-OH) surface to the hydrophobic long alkyl chain derivatized (≡Si-CH2-(CH2)16-CH3) surface. This long alkyl chain modified surface acts as an excellent moisture resistant film, which helps to maintain the low-k value of CDO. The dimensionally controlled Cu NWs were synthesized by a wet chemical approach. Optimization of the reducing agent, hydrazine (N2H4), controlled the surface morphology of nanowires (NWs). Interestingly, the high concentration of reducing agent produced particle decorated and/or with a rough NW surface, and conversely decreasing its concentration resulted in a comparatively thin, particle-free and smooth surface. The reaction temperature affected the aspect ratio (Length/Diameter) of the NWs. As the reaction temperature increased from 60 to 90 °C, the aspect ratio decreased from 140 to 21. Controlling the orientation of Cu NWs in a magnetic field was accomplished by coating them with a thin layer (~20 nm) of ferromagnetic nickel (Ni). This Ni-coated NWs showed an excellent degree of alignment (half-width ≈10 degrees) in the direction of an applied magnetic field over a large surface area at field strength as low as 2500 Gauss. Also, the Ni coating helped in protecting the copper core from oxidation resulting in better electrical wire-to-wire contacts. A nanowire-based interconnect channel was fabricated by combining magnetic field assisted alignment and deposition of aligned NWs on a thiol-modified and photolithography patterned CDO substrate. The NWs, deposited in the trenches, strongly bonded to the thiol-derivatized CDO substrate while an acetone wash removed loosely bound NWs on the photoresist surface. In electrical characterization, the directionally well-aligned Cu/Ni NWs channel displayed surprisingly two-fold higher conductivity than randomly arranged NWs channel.
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Jha, Gopal Chandra. "Copper to copper bonding by nano interfaces for fine pitch interconnections and thermal applications." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/22588.

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Khan, Sadia Arefin. "Electromigration analysis of high current carrying adhesive-based copper-to-copper interconnections." Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44885.

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"More Than Moore's Law" is the driving principle for the electronic packaging industry. This principle focuses on system integration instead of transistor density in order to achieve faster, thinner, and smarter electronic devices at a low cost. A core area of electronics packaging is interconnection technology, which enables ultra-miniaturization and high functional density. Solder bump technology is one of the original, and most common interconnection methods for flip chips. With growing demand for finer pitch and higher number of I/Os, solder bumps have been forced to smaller dimensions and therefore, are subjected to higher current densities. However, the technology is now reaching its fundamental limitations in terms of pitch, processability, and current-handling due to electromigration. Electromigration in solder bumps is one of the major causes of device failures. It is accelerated by many factors, one of which is current crowding. Current crowding is the non-uniform distribution of current at the interface of the solder bump and under-bump metallurgy, resulting in an increase in local current density and temperature. These factors, along with the formation of intermetallic compounds, can lead to voiding and ultimately failure. Electromigration in solder bumps has prevented pitch-scaling below 180-210 microns, producing a shift in the packaging industry to other interconnection approaches, specifically copper pillars with solder. This research aims to explore the electromigration resistance of an adhesive-based copper-to-copper (Cu-Cu) interconnection method without solder, which is thermo-compression bonded at a low temperature of 180C. While solder bumps are more susceptible to electromigration, Cu is capable of handling two orders of magnitude higher current density. This makes it an ideal candidate for next generation flip chip interconnections. Using finite element analysis, the current crowding and joule heating effects were evaluated for a 30 micron diameter Cu-Cu interconnection in comparison with two existing flip chip interconnection techniques, Cu pillar with solder and Pb-free solder. A test vehicle (TV) was fabricated for experimental analysis with 760 bumps arranged in an area-array format with a bump diameter of 30 micron. Thermo-mechanical reliability of the test vehicle was validated under thermal cycling from -55C to 125C. The Cu-Cu interconnections were then subjected to high current and temperature stress from 1E4 to 1E6 amps per square centimeter at a temperature of 130C. The results establish the high thermo-mechanical reliability and high electromigration resistance of the proposed Cu-Cu interconnection technology.
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Koh, Sau W. "Fatigue modeling of nano-structured chip-to-package interconnections." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28263.

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Thesis (M. S.)--Materials Science and Engineering, Georgia Institute of Technology, 2009.
Committee Chair: Rao R. Tummala; Committee Co-Chair: Ashok Saxena; Committee Member: Karl Jacob; Committee Member: Suresh Sitaraman; Committee Member: Thomas H. Sanders, Jr.
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Okereke, Raphael Ifeanyi. "Electroplated multi-path compliant copper interconnects for flip-chip packages." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51800.

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The international technology roadmap for semiconductors (ITRS) 2012 report foresees the use of porous dielectric materials with a low dielectric constant in conjunction with copper interconnects as a way to reduce the resistive-capacitive (RC) delay in microelectronic applications. However, the introduction of pores in the dielectric not only serves as stress raisers but also diminishes the structural strength of the material. The challenge therefore with the implementation of low-k dielectrics for high-performance flip-chip packages is to create a reliable die to organic substrate interconnect solution which induces low stresses on the die to prevent the cohesive cracking and the interfacial delamination of the dielectric material. Potential interconnect solutions that meet this challenge are MEMS-like compliant freestanding micro-structures. These structures are designed to work as spring-like elements which allow the free lateral and out-of-plane motion between the silicon die and the organic substrate under assembly conditions as well as under thermal or power cycling. Thus, the focus of this research is to design, fabricate, and characterize electrically and mechanically an innovative compliant interconnect approach that addresses these challenges. The proposed interconnect is scalable in dimensions and pitch, and consists multiple electrical paths which will provide redundancy against interconnect failure. The multi-path design employs parallel electrical paths which effectively split a larger cross-sectional area into several smaller areas making the overall design more compliant than otherwise. This research proposes wafer-level, high-yield, CMOS-compatible fabrication procedure using sequential photolithography and copper electroplating. The proposed interconnects are symmetric and are amenable to easy reflow assembly to substrates. The mechanical compliance of the fabricated structures is studied through nano-indentation, while the electrical characteristics are assessed through fabricated prototypes. The xvi thermo-mechanical reliability of compliant interconnects is also demonstrated. Lastly, the dimensional scalability of the interconnects is also demonstrated.
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Mehrotra, Gaurav. "Ultra thin ultrafine-pitch chip-package interconnections for embedded chip last approach." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/22594.

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Mistkawi, Nabil George. "Fundamental Studies in Selective Wet Etching and Corrosion Processes for High-Performance Semiconductor Devices." PDXScholar, 2010. https://pdxscholar.library.pdx.edu/open_access_etds/6.

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As multistep, multilayer processing in semiconductor industry becomes more complex, the role of cleaning solutions and etching chemistries are becoming important in enhancing yield and in reducing defects. This thesis demonstrates successful formulations that exhibit copper and tungsten compatibility, and are capable of Inter Layer Dielectric (ILD) cleaning and selective Ti etching. The corrosion behavior of electrochemically deposited copper thin films in deareated and non-dearated cleaning solution containing hydrofluoric acid (HF) has been investigated. Potentiodynamic polarization experiments were carried out to determine active, active-passive, passive, and transpassive regions. Corrosion rates were calculated from tafel slopes. ICP-MS and potentiodynamic methods yielded comparable Cu dissolution rates. Interestingly, the presence of hydrogen peroxide in the cleaning solution led to more than an order of magnitude suppression of copper dissolution rate. We ascribe this phenomenon to the formation of interfacial CuO which dissolves at slower rate in dilute HF. A kinetic scheme involving cathodic reduction of oxygen and anodic oxidation of Cu0 and Cu+1 is proposed. It was determined that the reaction order kinetics is first order with respect to both HF and oxygen concentrations. The learnings from copper corrosion studies were leveraged to develop a wet etch/clean formulation for selective titanium etching. The introduction of titanium hard-mask (HM) for dual damascene patterning of copper interconnects created a unique application in selective wet etch chemistry. A formulation that addresses the selectivity requirements was not available and was developed during the course of this dissertation. This chemical formulation selectively strips Ti HM film and removes post plasma etch polymer/residue while suppressing the etch rate of tungsten, copper, silicon oxide, silicon carbide, silicon nitride, and carbon doped silicon oxide. Ti etching selectivity exceeding three orders of magnitude was realized. Surprisingly, it exploits the use of HF, a chemical well known for its SiO2 etching ability, along with a silicon precursor to protect SiO2. The ability to selectively etch the Ti HM without impacting key transistor/interconnect components has enabled advanced process technology nodes of today and beyond. This environmentally friendly formulation is now employed in production of advanced high-performance microprocessors and produced in a 3000 gallon reactor.
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Lopez, Gerald Gabriel. "The impact of interconnect process variations and size effects for gigascale integration." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31781.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.
Committee Chair: Jeffrey A. Davis; Committee Co-Chair: James D. Meindl; Committee Member: Azad J. Naeemi; Committee Member: Dennis W. Hess; Committee Member: George F. Riley; Committee Member: Linda S. Milor. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Books on the topic "Interconnects (Integrated circuit technology) Copper"

1

Gupta, Tapan. Copper interconnect technology. Dordrecht: Springer, 2009.

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Kondo, K. Morphological evolution of electrodeposits and electrochemical processing in ULSI fabrication and electrodeposition of and on semiconductors IV: Proceedings of the international symposia. Edited by Electrochemical Society Electrodeposition Division, Electrochemical Society. Dielectric Science and Technology Division, Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2005.

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Symposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Warrendale, Pa: Materials Research Society, 2006.

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Symposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Warrendale, Pa: Materials Research Society, 2006.

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Symposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Warrendale, Pa: Materials Research Society, 2006.

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S, Ho P., ed. Stress-induced phenomena in metallization: Seventh International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 14-16 June 2004. Melville, N.Y: American Institute of Physics, 2004.

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International, Workshop on Stress-Induced Phenomena in Metallization (10th 2008 Austin Texas). Stress-induced phenomena in metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 5-7 November 2008. Melville, N.Y: American Institute of Physics, 2009.

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International, Workshop on Stress-Induced Phenomena in Metallization (9th 2007 Kyoto Japan). Stress-induced phenomena in metallization: Ninth International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan 4 - 6 April 2007. Melville, N.Y: American Institute of Physics, 2007.

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International Workshop on Stress-Induced Phenomena in Metallization (11th 2010 Bad Schandau, Germany). Stress-induced phenomena in metallization: Eleventh International Workshop on Stress-Induced Phenomena in Metallization, Bad Schandau, Germany, 12-14 April 2010. Edited by Zschech Ehrenfried, Ho P. S, and Ogawa Shinʼichi. Melville, N.Y: American Institute of Physics, 2010.

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International Workshop on Stress-Induced Phenomena in Metallization (10th 2008 Austin, Texas). Stress-induced phenomena in metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 5-7 November 2008. Edited by Ho P. S, Ogawa Shinichi Dr, and Zschech Ehrenfried. Melville, N.Y: American Institute of Physics, 2009.

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Book chapters on the topic "Interconnects (Integrated circuit technology) Copper"

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Sandha, Karmjit Singh. "CNT as Interconnects." In Advances in Computer and Electrical Engineering, 130–59. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-7998-1393-4.ch007.

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The chapter will start with brief introduction to the interconnects and its importance in an integrated circuit at deep sub-micron technology nodes. The brief discussion about the concept of scaling, interconnects models, and material in use are presented. The limitations of conventional materials at scaled down technology nodes will be discussed next. The focus of the chapter is to present the electrical equivalent circuit model to estimate the impedance parameters of SWCNT bundle and MWCNT bundle as interconnects at different nano-scaled technology nodes for global level interconnect length. Using ESC model of SWCNT, MWCNT, and copper, the performance comparative analysis for delay and power delay product (PDP) will be presented for different interconnect lengths at nano-scaled technology nodes. Finally, the chapter summary and conclusion will be written at the end of the chapter.
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Vargas-Bernal, Rafael. "Performance Analysis of Interconnects Based on Carbon Nanotubes for AMS/RF IC Design." In Advances in Computer and Electrical Engineering, 336–63. IGI Global, 2015. http://dx.doi.org/10.4018/978-1-4666-6627-6.ch014.

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Electrical interconnects are essential elements to transmit electrical current and/or to apply electrical voltage to the electronic devices found in an integrated circuit. With the introduction of carbon nanotubes in electronic applications, efficient and high-speed interconnects have allowed for optimizing the electrical performance of the integrated circuits. Additionally, technical problems, such as electromigration, large values of parasitic elements, large delays, and high thermal dissipation, presented in metallic interconnects based on copper, can be avoided. This chapter presents a performance analysis of interconnects used in AMS/RF IC design based on carbon nanotubes as the physical material where electrical variables are provided.
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Conference papers on the topic "Interconnects (Integrated circuit technology) Copper"

1

Zhu, Lin, and Hong-xia Liu. "DC and pulsed DC stress evolution in copper interconnects." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306250.

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Ladani, Leila J., and Omar Rodriguez. "Thermo-Mechanical Reliability of Through Silicon Vias (TSVs) and Solder Interconnects in 3-Dimensional Integrated Circuits." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89056.

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3-dimensional integrated circuit (3D IC) is a promising technology in today’s IC packaging industry. Since the technology is in infancy stages, many aspects of this technology are still under heavy investigation. Reliability of through silicon via (TSV) interconnects and interlayer bonding between the silicon layers are issues that become more complicated in 3D ICs due to complexity of the architecture and miniaturized interconnects. Optimizing design of these devices is essential in order to avoid short fatigue life of interconnects. This manuscript addresses the impact of design parameters such as die thickness, TSV diameter, TSV pitch, underfill thickness and underfill properties on thermo-mechanical durability of Direct Chip Attach (DCA) solder joints and TSV interconnects used in a 3D IC packages. A design was proposed where DCA is used to connect 4 layers of ICs and TSVs are used to connect the active layer of the dies to the second silicon layer. Solder joints, as small as 50-micron diameter, were used to attach silicon layers. A numerical experiment is designed to vary design parameters at 3 levels using L9 ortagonal array. A 3-dimensional model of the package was built and model was solved under an accelerated temperature cycle loading. Solder is considered as visco-plastic material and copper interconnects are assumed to follow bilinear isotropic hardening behavior. Two continuum damage models, energy partitioning and Coffin-Manson models, were used to assess the number of cycles to failure for solder joints and TSV copper interconnects respectively. Minitab software was used to analyze the result of experiment. The most influential factors on durability of solder interconnect are found to be underfill properties and height. However, the most influential factor on TSV durability is found to be TSV diameter. A non-linear response was observed for TSV pitch and diameter indicating that the optimum level may be in the range selected.
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de Orio, Roberto Lacerda, and Siegfried Selberherr. "Formation and movement of voids in copper interconnect structures." In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2012. http://dx.doi.org/10.1109/icsict.2012.6467675.

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Ladani, Leila J. "Effect of Design Parameters on Thermo-Mechanical Stresses in 3D ICS." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89083.

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Solid Liquid Inter-diffusion (SLID) bonds have been recently utilized to fabricate 3-dimensional integrated circuits (3D ICs). Introduction of this new technology in the production of electronic devices has enabled the electronic industry to produce super high density interconnects and vertical integration of ICs without manufacturing and environmental limitations of conventional solder interconnects. The properties of these bonds however are completely different from conventional solder joints. This manuscript presents a microstructural characterization of these bonds. This analysis shows that the bond mostly consist of intermetallic material, therefore may not behave visco-plastically under thermo-mechanical loading. A numerical experiment is conducted to evaluate the effect of design parameters such as underfill properties, die thickness, interconnect size and substrate thickness on stress level in SLID bonds and copper interconnects. A finite element model was built for all the treatments of the experiment and von mises stress at the copper interconnects and SLID bonds were obtained from finite element. Statistical analysis of the results was conducted to determine the main effects of selected parameters. This analysis shows that die and substrate thicknesses and underfill stiffness are the most influential factors among the selected parameters on stress on copper interconnects. Main effect results for stress analysis in SLID bonds using finite element shows that die thickness and underfill stiffness are the most influential factors in defining stress at SLID bonds. Both factors show higher stress at higher levels.
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Cheng, Xiu-lan. "Optimizing post cleaning of Tungsten contact CMP to improve the yield of logic products with copper interconnect." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306249.

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6

Enquist, P., G. Fountain, C. Petteway, A. Hollingsworth, and H. Grady. "Low Cost of Ownership scalable copper Direct Bond Interconnect 3D IC technology for three dimensional integrated circuit applications." In 2009 IEEE International Conference on 3D System Integration (3DIC). IEEE, 2009. http://dx.doi.org/10.1109/3dic.2009.5306533.

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Mirza, Fahad, Thiagarajan Raman, Saeed Ghalambor, Ashraf Bastawros, and Dereje Agonafer. "Coupled Computational Thermal and Mechanical Analysis of a Single Chip Flip Chip Module With Low-k Dielectric Medium." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-63670.

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Miniaturization and more recently convergence have been driving the industry since the invention of the transistor and integrated circuit (IC). While gate delay has decreased with transistor scaling, the increase in the resistive capacitive (RC) delay due to shrinking interconnect dimensions has become a serious concern for the development of future-generation electronics. To reduce the delay due to resistance R, a major technology change was the replacement of Aluminum (Al) with Copper (Cu) interconnects. Recently, some investigators have suggested using low-k dielectric (having dielectric constant less than 4) instead of Silicon dioxide (k = 3.9) to reduce the capacitive component in the RC delay. Recent research has shown low-k materials to have characteristics such as low mechanical strength and adhesion. In this paper, thermo-mechanical analysis of a single chip flip-chip module (SCM) consisting of a die integrated with low-k dielectric medium, substrate, solder balls, and a printed circuit board (PCB) is performed. The analysis is done in two steps within the ANSYS finite element software to account for thermally induced stresses due to mismatch in thermal expansion coefficient. In the first step, the thermal analysis is carried out to derive the steady state temperature distribution within the package under the imposed power rating. In the second step, the evaluated temperature field is utilized in a coupled thermo-mechanical structural analysis. The developed framework is utilized to study the thermo-mechanical behavior of various low-k dielectrics, wherein the stresses and strain distributions within the chip region are quantified. The analysis has shown no change in the temperature distribution between the base case of Silicon dioxide (SiO2) and low-k materials. The maximum equivalent stress in the package, for all the four dielectric cases (SiO2, polyimide, Hydrogen Silsesquioxane, and Black diamond) is seen in the silicon region of the die and that it does not change with the dielectric materials. However, the maximum equivalent stress in the low-k/metal layers varies with the materials but is always few orders of magnitude less than their corresponding yield strengths. Comparative analysis between Silicon dioxide (SiO2) and different low-k materials will help in identifying the weak spots in low-k dielectric when exposed to standard user environments.
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Gambino, Jeff, Fen Chen, and John He. "Copper interconnect technology for the 32 nm node and beyond." In 2009 IEEE Custom Integrated Circuits Conference (CICC). IEEE, 2009. http://dx.doi.org/10.1109/cicc.2009.5280904.

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Qi, Siyuan, Robert Litchfield, David A. Hutt, Bala Vaidhyanathan, Changqing Liu, Patrick Webb, and Stephen Ebbens. "Copper conductive adhesives for printed circuit interconnects." In 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC). IEEE, 2012. http://dx.doi.org/10.1109/ectc.2012.6249059.

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Zhou, Changjian, and Cary Y. Yang. "3D Nanocarbon Interconnects." In 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2020. http://dx.doi.org/10.1109/icsict49897.2020.9278240.

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