Relevant bibliographies by topics / Interconnects (Integrated circuit technology) Copper

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  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers

Academic literature on the topic 'Interconnects (Integrated circuit technology) Copper'

Author: Grafiati
Published: 4 June 2021
Last updated: 18 February 2022

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Journal articles on the topic "Interconnects (Integrated circuit technology) Copper"

1

Sahoo, Manodipan, and Hafizur Rahaman. "Analysis of Crosstalk-Induced Effects in Multilayer Graphene Nanoribbon Interconnects." Journal of Circuits, Systems and Computers 26, no. 06 (2017): 1750102. http://dx.doi.org/10.1142/s021812661750102x.

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Crosstalk effects in multilayer graphene nanoribbon (GNR) interconnects for the future nanoscale integrated circuits are investigated with the help of ABCD parameter matrix approach for intermediate- and global-level interconnects at 11[Formula: see text]nm and 8[Formula: see text]nm technology nodes. The worst-case crosstalk-induced delay and peak crosstalk noise voltages are derived for both neutral and doped zigzag GNR interconnects and compared to those of conventional copper interconnects. The worst-case crosstalk delays for perfectly specular, doped multilayer GNR interconnects are less
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Plovie, Bart, Sheila Dunphy, Kristof Dhaenens, et al. "2.5D Smart Objects Using Thermoplastic Stretchable Interconnects." International Symposium on Microelectronics 2015, no. 1 (2015): 000868–73. http://dx.doi.org/10.4071/isom-2015-thp51.

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This contribution describes the technology used to produce thermoplastically deformable electronics, based on flexible circuit board technology, to achieve low-cost 2.5D free-form rigid smart objects. These one-time deformable circuits employ a modified version of the previously developed meander-based “polymer-last” technology for dynamically stretchable elastic circuits. This is readily achieved by substituting the dynamically stretchable elastomeric materials (e.g. silicone) with thermoplastic polymers (e.g. polycarbonate). Afterwards the circuit is given its final form using widely availab
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Karthikeyan, A., and P. S. Mallick. "Optimization Techniques for CNT Based VLSI Interconnects — A Review." Journal of Circuits, Systems and Computers 26, no. 03 (2016): 1730002. http://dx.doi.org/10.1142/s0218126617300021.

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Interconnects plays an important role in integrated circuits. Copper is used as an interconnect material, but beyond 22[Formula: see text]nm technology node it faces many problems due to grain boundary scattering, and therefore carbon nanotubes are the most promising future interconnect materials. Various techniques and approaches such as driver sizing, repeater sizing, repeater insertion, wire sizing, wire spacing, shielding, boos table repeater were used by various researchers. Many of these techniques can be utilized for future CNT based VLSI interconnects as well. This paper presents a det
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Kureshi, Abdul Kadir, and Mohd Hasan. "Analysis of CNT Bundle and Its Comparison with Copper Interconnect for CMOS and CNFET Drivers." Journal of Nanomaterials 2009 (2009): 1–6. http://dx.doi.org/10.1155/2009/486979.

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In nanoscale regime as the CMOS process technology continues to scale, the standard copper (Cu) interconnect will become a major hurdle for onchip communication due to high resistivity and electromigration. This paper presents the comprehensive evaluation of mixed CNT bundle interconnects and investigates their prospects as a low power high-speed interconnect for future nanoscale-integrated circuits. The performance of mixed CNT bundle interconnect is examined with carbon nanotube field effect transistor (CNFET) as a driver and compared with the traditional interconnect, that is, CMOS driver o
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Sahoo, Manodipan, and Hafizur Rahaman. "Modeling of Crosstalk Induced Effects in Copper-Based Nanointerconnects: An ABCD Parameter Matrix-Based Approach." Journal of Circuits, Systems and Computers 24, no. 02 (2014): 1540007. http://dx.doi.org/10.1142/s0218126615400071.

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Aggressive miniaturization has led to severe performance and signal integrity issues in copper-based interconnects in the nanometric regime. As a consequence, development of a proper analytical model for such interconnects is extremely important. In this work, an ABCD parameter matrix-based model is presented for fast and accurate estimation of crosstalk delay and noise for identically coupled copper-based nanointerconnect systems. Using the proposed model, the crosstalk delay and noise are estimated in copper based nanointerconnects for intermediate and global interconnects at the future inte
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Rebelli, Shashank, and Bheema Rao Nistala. "A novel MRTD model for signal integrity analysis of resistive driven coupled copper interconnects." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 37, no. 1 (2018): 189–207. http://dx.doi.org/10.1108/compel-12-2016-0521.

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Purpose This paper aims to model the coupled on-chip Copper (Cu) interconnects by using the multiresolution time-domain (MRTD) method. Design/methodology/approach The proposed model is a wavelet-based numerical method for analyzing signal integrity and propagation delay of coupled on-chip interconnects. Moreover, the dependency of crosstalk noise and delay on coupling parasitics (L12, C12) are analyzed. Findings The proposed MRTD method captures the behaviour of propagation delay and peak crosstalk noise on victim line against coupling parasitics, which is in close agreement with that of H sim
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Sharma, Himanshu, and Karmjit Singh Sandha. "Impact of Intercalation Doping on the Conductivity of Multi-Layer Graphene Nanoribbon (MLGNR) in On-Chip Interconnects." Journal of Circuits, Systems and Computers 29, no. 12 (2020): 2050185. http://dx.doi.org/10.1142/s0218126620501856.

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Graphene nanoribbons are considered potentially suitable and have exhibited excellent results in on-chip interconnects. In order to evaluate the different circuit impedance parameters of multi-layer graphene nanoribbons (MLGNRs), an electrical equivalent single conductor (ESC) along with an analytical model is proposed. On the basis of an electrical model, the impact of intercalation doping on the performance of MLGNRs at 32, 22, and 16[Formula: see text]nm technology nodes is discussed in this paper. Moreover, it is also discussed that the increase in intercalation doping increases the Fermi
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Khursheed, Afreen, and Kavita Khare. "Designing dual-chirality and multi-Vt repeaters for performance optimization of 32 nm interconnects." Circuit World 46, no. 2 (2020): 71–83. http://dx.doi.org/10.1108/cw-06-2019-0060.

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Purpose This paper is an unprecedented effort to resolve the performance issue of very large scale integrated circuits (VLSI) interconnects encountered because of the scaling of device dimensions. Repeater interpolation technique is an effective approach for enhancing speed of interconnect network. Proposed buffers as repeater are modeled by using dual chirality multi-Vt technology to reduce delay besides mitigating average power consumption. Interconnects modeled with carbon nanotube (CNT) technology are compared with copper interconnect for various lengths. Buffer circuits are designed with
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Neirynck, J. M., R. J. Gutmann, and S. P. Murarka. "Copper/Benzocyclobutene Interconnects for Sub‐100 nm Integrated Circuit Technology: Elimination of High‐Resistivity Metallic Liners and High‐Dielectric Constant Polish Stops." Journal of The Electrochemical Society 146, no. 4 (1999): 1602–7. http://dx.doi.org/10.1149/1.1391812.

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Wang, Juan, Ru Wang, and Guo Dong Chen. "Evaluation of the Stability on the New Alkaline Copper Bulk Slurry." Key Engineering Materials 645-646 (May 2015): 352–55. http://dx.doi.org/10.4028/www.scientific.net/kem.645-646.352.

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At present, the chemical mechanical polishing is the only means for global planarization of an integrated circuit. After the node of the integrated circuit processing comes into 45nm, the diameter of wafer is 300mm, and the copper interconnect layer is above the 10 layer. In the same time the new low dielectric constant materials are used to the integrated circuit processing. That requires the property of the slurry used in the chemical mechanical polishing stricter. So the domestic and international companies carry out a series research works. Based on investigation and research for many year
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Dissertations / Theses on the topic "Interconnects (Integrated circuit technology) Copper"

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Osborn, Tyler Nathaniel. "All-copper chip-to-substrate interconnects for high performance integrated circuit devices." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28211.

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Thesis (M. S.)--Chemical Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Kohl, Paul; Committee Member: Bidstrup Allen, Sue Ann; Committee Member: Fuller, Thomas; Committee Member: Hesketh, Peter; Committee Member: Hess, Dennis; Committee Member: Meindl, James.
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Wu, Fangyu. "Hydrogen-based plasma etch of copper at low temperature." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/43617.

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Although copper (Cu) is the preferred interconnect material due to its lower resistivity than aluminum (Al), Cu subtractive etching processes have not been developed at temperatures less than 180 °C, primarily due to the inability to form volatile etch products at low temperature. The conventional damascene technology avoids the need for subtractive etching of Cu by electroplating Cu into previously etched dielectric trenches/vias, followed by a chemical/mechanical planarization (CMP) process. However, a critical "size effect" limitation has arisen for damascene technology as a result of the c
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Darmakkolla, Srikar Rao. "Copper Nanowires Synthesis and Self-Assembly for Interconnect Applications." PDXScholar, 2017. https://pdxscholar.library.pdx.edu/open_access_etds/4034.

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One-dimensional (1D) nanomaterial self-assembly offers an excellent approach to the fabrication of highly complex nanodevices. Despite considerable effort and research, precisely controlling the orientation and positioning of nanowires (NWs) on a large-scale area and assembling into a functional device is still a state of the art problem. This thesis focuses on the dimensionally controlled copper nanowires (Cu NWs) synthesis, and magnetic field assisted self-assembly of cupronickel nanowires (Cu/Ni NWs) into interconnect structures on a carbon doped silicon dioxide (CDO) wafer. CDO is a low di
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Jha, Gopal Chandra. "Copper to copper bonding by nano interfaces for fine pitch interconnections and thermal applications." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/22588.

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Khan, Sadia Arefin. "Electromigration analysis of high current carrying adhesive-based copper-to-copper interconnections." Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44885.

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"More Than Moore's Law" is the driving principle for the electronic packaging industry. This principle focuses on system integration instead of transistor density in order to achieve faster, thinner, and smarter electronic devices at a low cost. A core area of electronics packaging is interconnection technology, which enables ultra-miniaturization and high functional density. Solder bump technology is one of the original, and most common interconnection methods for flip chips. With growing demand for finer pitch and higher number of I/Os, solder bumps have been forced to smaller dimensions and
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Koh, Sau W. "Fatigue modeling of nano-structured chip-to-package interconnections." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28263.

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Thesis (M. S.)--Materials Science and Engineering, Georgia Institute of Technology, 2009.<br>Committee Chair: Rao R. Tummala; Committee Co-Chair: Ashok Saxena; Committee Member: Karl Jacob; Committee Member: Suresh Sitaraman; Committee Member: Thomas H. Sanders, Jr.
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Okereke, Raphael Ifeanyi. "Electroplated multi-path compliant copper interconnects for flip-chip packages." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51800.

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The international technology roadmap for semiconductors (ITRS) 2012 report foresees the use of porous dielectric materials with a low dielectric constant in conjunction with copper interconnects as a way to reduce the resistive-capacitive (RC) delay in microelectronic applications. However, the introduction of pores in the dielectric not only serves as stress raisers but also diminishes the structural strength of the material. The challenge therefore with the implementation of low-k dielectrics for high-performance flip-chip packages is to create a reliable die to organic substrate interconnec
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Mehrotra, Gaurav. "Ultra thin ultrafine-pitch chip-package interconnections for embedded chip last approach." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/22594.

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Mistkawi, Nabil George. "Fundamental Studies in Selective Wet Etching and Corrosion Processes for High-Performance Semiconductor Devices." PDXScholar, 2010. https://pdxscholar.library.pdx.edu/open_access_etds/6.

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As multistep, multilayer processing in semiconductor industry becomes more complex, the role of cleaning solutions and etching chemistries are becoming important in enhancing yield and in reducing defects. This thesis demonstrates successful formulations that exhibit copper and tungsten compatibility, and are capable of Inter Layer Dielectric (ILD) cleaning and selective Ti etching. The corrosion behavior of electrochemically deposited copper thin films in deareated and non-dearated cleaning solution containing hydrofluoric acid (HF) has been investigated. Potentiodynamic polarization experime
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Lopez, Gerald Gabriel. "The impact of interconnect process variations and size effects for gigascale integration." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/31781.

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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2010.<br>Committee Chair: Jeffrey A. Davis; Committee Co-Chair: James D. Meindl; Committee Member: Azad J. Naeemi; Committee Member: Dennis W. Hess; Committee Member: George F. Riley; Committee Member: Linda S. Milor. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Books on the topic "Interconnects (Integrated circuit technology) Copper"

1

Gupta, Tapan. Copper interconnect technology. Springer, 2009.

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Kondo, K. Morphological evolution of electrodeposits and electrochemical processing in ULSI fabrication and electrodeposition of and on semiconductors IV: Proceedings of the international symposia. Edited by Electrochemical Society Electrodeposition Division, Electrochemical Society. Dielectric Science and Technology Division, Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Electrochemical Society, 2005.

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Symposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Materials Research Society, 2006.

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Symposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Materials Research Society, 2006.

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Symposium F, "Materials, Technology and Reliability of Low-K Dielectrics and Copper Interconnects" (2006 San Francisco, Calif.). Materials, technology and reliability of low-k dielectrics and copper interconnects: Symposium held April 18-21, 2006, San Francisco, California, U.S.A. Edited by Tsui Ting Y and Materials Research Society Meeting. Materials Research Society, 2006.

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S, Ho P., ed. Stress-induced phenomena in metallization: Seventh International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 14-16 June 2004. American Institute of Physics, 2004.

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International, Workshop on Stress-Induced Phenomena in Metallization (10th 2008 Austin Texas). Stress-induced phenomena in metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 5-7 November 2008. American Institute of Physics, 2009.

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International, Workshop on Stress-Induced Phenomena in Metallization (9th 2007 Kyoto Japan). Stress-induced phenomena in metallization: Ninth International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan 4 - 6 April 2007. American Institute of Physics, 2007.

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International Workshop on Stress-Induced Phenomena in Metallization (11th 2010 Bad Schandau, Germany). Stress-induced phenomena in metallization: Eleventh International Workshop on Stress-Induced Phenomena in Metallization, Bad Schandau, Germany, 12-14 April 2010. Edited by Zschech Ehrenfried, Ho P. S, and Ogawa Shinʼichi. American Institute of Physics, 2010.

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International Workshop on Stress-Induced Phenomena in Metallization (10th 2008 Austin, Texas). Stress-induced phenomena in metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 5-7 November 2008. Edited by Ho P. S, Ogawa Shinichi Dr, and Zschech Ehrenfried. American Institute of Physics, 2009.

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Book chapters on the topic "Interconnects (Integrated circuit technology) Copper"

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Sandha, Karmjit Singh. "CNT as Interconnects." In Advances in Computer and Electrical Engineering. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-7998-1393-4.ch007.

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The chapter will start with brief introduction to the interconnects and its importance in an integrated circuit at deep sub-micron technology nodes. The brief discussion about the concept of scaling, interconnects models, and material in use are presented. The limitations of conventional materials at scaled down technology nodes will be discussed next. The focus of the chapter is to present the electrical equivalent circuit model to estimate the impedance parameters of SWCNT bundle and MWCNT bundle as interconnects at different nano-scaled technology nodes for global level interconnect length. Using ESC model of SWCNT, MWCNT, and copper, the performance comparative analysis for delay and power delay product (PDP) will be presented for different interconnect lengths at nano-scaled technology nodes. Finally, the chapter summary and conclusion will be written at the end of the chapter.
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Vargas-Bernal, Rafael. "Performance Analysis of Interconnects Based on Carbon Nanotubes for AMS/RF IC Design." In Advances in Computer and Electrical Engineering. IGI Global, 2015. http://dx.doi.org/10.4018/978-1-4666-6627-6.ch014.

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Electrical interconnects are essential elements to transmit electrical current and/or to apply electrical voltage to the electronic devices found in an integrated circuit. With the introduction of carbon nanotubes in electronic applications, efficient and high-speed interconnects have allowed for optimizing the electrical performance of the integrated circuits. Additionally, technical problems, such as electromigration, large values of parasitic elements, large delays, and high thermal dissipation, presented in metallic interconnects based on copper, can be avoided. This chapter presents a performance analysis of interconnects used in AMS/RF IC design based on carbon nanotubes as the physical material where electrical variables are provided.
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Conference papers on the topic "Interconnects (Integrated circuit technology) Copper"

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Zhu, Lin, and Hong-xia Liu. "DC and pulsed DC stress evolution in copper interconnects." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306250.

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Ladani, Leila J., and Omar Rodriguez. "Thermo-Mechanical Reliability of Through Silicon Vias (TSVs) and Solder Interconnects in 3-Dimensional Integrated Circuits." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89056.

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3-dimensional integrated circuit (3D IC) is a promising technology in today’s IC packaging industry. Since the technology is in infancy stages, many aspects of this technology are still under heavy investigation. Reliability of through silicon via (TSV) interconnects and interlayer bonding between the silicon layers are issues that become more complicated in 3D ICs due to complexity of the architecture and miniaturized interconnects. Optimizing design of these devices is essential in order to avoid short fatigue life of interconnects. This manuscript addresses the impact of design parameters s
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de Orio, Roberto Lacerda, and Siegfried Selberherr. "Formation and movement of voids in copper interconnect structures." In 2012 IEEE 11th International Conference on Solid-State and Integrated Circuit Technology (ICSICT). IEEE, 2012. http://dx.doi.org/10.1109/icsict.2012.6467675.

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Ladani, Leila J. "Effect of Design Parameters on Thermo-Mechanical Stresses in 3D ICS." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89083.

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Solid Liquid Inter-diffusion (SLID) bonds have been recently utilized to fabricate 3-dimensional integrated circuits (3D ICs). Introduction of this new technology in the production of electronic devices has enabled the electronic industry to produce super high density interconnects and vertical integration of ICs without manufacturing and environmental limitations of conventional solder interconnects. The properties of these bonds however are completely different from conventional solder joints. This manuscript presents a microstructural characterization of these bonds. This analysis shows tha
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Cheng, Xiu-lan. "Optimizing post cleaning of Tungsten contact CMP to improve the yield of logic products with copper interconnect." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306249.

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Enquist, P., G. Fountain, C. Petteway, A. Hollingsworth, and H. Grady. "Low Cost of Ownership scalable copper Direct Bond Interconnect 3D IC technology for three dimensional integrated circuit applications." In 2009 IEEE International Conference on 3D System Integration (3DIC). IEEE, 2009. http://dx.doi.org/10.1109/3dic.2009.5306533.

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Mirza, Fahad, Thiagarajan Raman, Saeed Ghalambor, Ashraf Bastawros, and Dereje Agonafer. "Coupled Computational Thermal and Mechanical Analysis of a Single Chip Flip Chip Module With Low-k Dielectric Medium." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-63670.

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Miniaturization and more recently convergence have been driving the industry since the invention of the transistor and integrated circuit (IC). While gate delay has decreased with transistor scaling, the increase in the resistive capacitive (RC) delay due to shrinking interconnect dimensions has become a serious concern for the development of future-generation electronics. To reduce the delay due to resistance R, a major technology change was the replacement of Aluminum (Al) with Copper (Cu) interconnects. Recently, some investigators have suggested using low-k dielectric (having dielectric co
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Gambino, Jeff, Fen Chen, and John He. "Copper interconnect technology for the 32 nm node and beyond." In 2009 IEEE Custom Integrated Circuits Conference (CICC). IEEE, 2009. http://dx.doi.org/10.1109/cicc.2009.5280904.

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Qi, Siyuan, Robert Litchfield, David A. Hutt, et al. "Copper conductive adhesives for printed circuit interconnects." In 2012 IEEE 62nd Electronic Components and Technology Conference (ECTC). IEEE, 2012. http://dx.doi.org/10.1109/ectc.2012.6249059.

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Zhou, Changjian, and Cary Y. Yang. "3D Nanocarbon Interconnects." In 2020 IEEE 15th International Conference on Solid-State & Integrated Circuit Technology (ICSICT). IEEE, 2020. http://dx.doi.org/10.1109/icsict49897.2020.9278240.

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