Academic literature on the topic 'Interconnects (Integrated circuit technology) Copper Electrodiffusion'
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Journal articles on the topic "Interconnects (Integrated circuit technology) Copper Electrodiffusion"
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Sahoo, Manodipan, and Hafizur Rahaman. "Analysis of Crosstalk-Induced Effects in Multilayer Graphene Nanoribbon Interconnects." Journal of Circuits, Systems and Computers 26, no. 06 (March 5, 2017): 1750102. http://dx.doi.org/10.1142/s021812661750102x.
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Crosstalk effects in multilayer graphene nanoribbon (GNR) interconnects for the future nanoscale integrated circuits are investigated with the help of ABCD parameter matrix approach for intermediate- and global-level interconnects at 11[Formula: see text]nm and 8[Formula: see text]nm technology nodes. The worst-case crosstalk-induced delay and peak crosstalk noise voltages are derived for both neutral and doped zigzag GNR interconnects and compared to those of conventional copper interconnects. The worst-case crosstalk delays for perfectly specular, doped multilayer GNR interconnects are less than 4% of that of copper interconnects for 1[Formula: see text]mm long intermediate interconnects and less than 7% of that of copper interconnects for 5[Formula: see text]mm long global interconnects at 8[Formula: see text]nm node. As far as the worst-case peak crosstalk noise voltage is concerned, neutral GNR interconnects are slightly better performing than their doped counterparts. But from the perspective of overall noise contribution, doped GNR interconnects outperform neutral ones for all the cases. Finally, our analysis shows that from the signal integrity perspective, perfectly specular, doped multilayer zigzag GNR interconnects are a suitable alternative to copper interconnects for the future-generation integrated circuit technology.
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Sahoo, Manodipan, and Hafizur Rahaman. "Modeling of Crosstalk Induced Effects in Copper-Based Nanointerconnects: An ABCD Parameter Matrix-Based Approach." Journal of Circuits, Systems and Computers 24, no. 02 (November 27, 2014): 1540007. http://dx.doi.org/10.1142/s0218126615400071.
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Aggressive miniaturization has led to severe performance and signal integrity issues in copper-based interconnects in the nanometric regime. As a consequence, development of a proper analytical model for such interconnects is extremely important. In this work, an ABCD parameter matrix-based model is presented for fast and accurate estimation of crosstalk delay and noise for identically coupled copper-based nanointerconnect systems. Using the proposed model, the crosstalk delay and noise are estimated in copper based nanointerconnects for intermediate and global interconnects at the future integrated circuit technology nodes of 21 and 15 nm, respectively. Proposed model has been compared with SPICE and it is found that this model is almost 100% accurate as SPICE with respect to both the crosstalk delay as well as noise. Moreover, this model is as much as ~ 63 and ~ 155 times faster, respectively. From the crosstalk delay and noise analysis of unrepeated interconnects, it is observed that both delay and noise contribution will increase in scaled technology nodes. The same trend is observed also for the repeated interconnects. Also more number of repeaters and higher repeater sizes will be needed for delay minimization as we scale deeper. So as far as crosstalk induced effects are concerned, the copper interconnects will face a huge challenge to overcome in nanometer technology nodes.
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Plovie, Bart, Sheila Dunphy, Kristof Dhaenens, Steven Van Put, Bjorn Vandecasteele, Frederick Bossuyt, and Jan Vanfleteren. "2.5D Smart Objects Using Thermoplastic Stretchable Interconnects." International Symposium on Microelectronics 2015, no. 1 (October 1, 2015): 000868–73. http://dx.doi.org/10.4071/isom-2015-thp51.
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This contribution describes the technology used to produce thermoplastically deformable electronics, based on flexible circuit board technology, to achieve low-cost 2.5D free-form rigid smart objects. These one-time deformable circuits employ a modified version of the previously developed meander-based “polymer-last” technology for dynamically stretchable elastic circuits. This is readily achieved by substituting the dynamically stretchable elastomeric materials (e.g. silicone) with thermoplastic polymers (e.g. polycarbonate). Afterwards the circuit is given its final form using widely available thermoforming techniques, such as vacuum forming, where the material is heated above its glass transition temperature and drawn against a forming tool by a strong vacuum. After cooling down the thermoplastic retains its shape without inducing large internal stresses. The presented method allows for the production of these circuits on a flat substrate, using standard printed circuit board production equipment, with deformation only taking place afterwards; eliminating the need for large investments and reducing the cost of fabrication. Potential advantages over competitive methods are reductions in weight and material usage, decrease of mechanical complexity; lower tooling cost, increased resilience, and a higher degree of manufacturer independence due to adhering to standard industrial practices. This is realized by starting production from a flexible circuit board, manufactured by an industrial supplier using polyimide flexible copper clad laminate, which is attached to a temporary reusable carrier board through means of a silicone based high-temperature pressure sensitive adhesive. Through selective laser structuring the meander and island outlines of the flexible circuit are defined, without causing damage to the carrier board or pressure sensitive adhesive. After removing the residual material the circuit is assembled using high-temperature lead-free solder, made possible by the temporary carrier keeping the circuit in place at these elevated temperatures. The circuit is then transferred into a thermoplastic laminate, which is deformed into its final shape. After demonstrating the need for stretchable electronics for this application, this contribution describes the method used to design, fabricate, and test the first one-time deformable circuits manufactured using the presented technology. Using the initial set of observations a series of preliminary design rules is established, both for the circuit and choice of materials. The feasibility of this manufacturing method was then demonstrated through a small scale production run using lab scale equipment, where a large quantity of high power LEDs was integrated into a one-time deformable device made out of polystyrene and thermoplastic polyurethane. These devices were then tested by exposing them to real world conditions for several days.
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Rebelli, Shashank, and Bheema Rao Nistala. "A novel MRTD model for signal integrity analysis of resistive driven coupled copper interconnects." COMPEL - The international journal for computation and mathematics in electrical and electronic engineering 37, no. 1 (January 2, 2018): 189–207. http://dx.doi.org/10.1108/compel-12-2016-0521.
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Purpose This paper aims to model the coupled on-chip Copper (Cu) interconnects by using the multiresolution time-domain (MRTD) method. Design/methodology/approach The proposed model is a wavelet-based numerical method for analyzing signal integrity and propagation delay of coupled on-chip interconnects. Moreover, the dependency of crosstalk noise and delay on coupling parasitics (L12, C12) are analyzed. Findings The proposed MRTD method captures the behaviour of propagation delay and peak crosstalk noise on victim line against coupling parasitics, which is in close agreement with that of H simulation program with integrated circuit emphasis (HSPICE). The average error for the proposed model is less than 1 per cent with respect to HSPICE for the estimation of peak crosstalk noise voltage. Practical implications Simulations are performed using HSPICE and compared with those performed using the proposed MRTD method for global interconnect length with 130-nm technology, where the computations of the proposed model are carried out using Matlab. Originality/value The MRTD method with its unique features is tailored for modelling interconnects. To build further credence to this and its profound existence in the latest state-of-art works, simulations of crosstalk noise and propagation delay, for coupled Cu interconnect lines, using MRTD and finite-difference time-domain (FDTD) are executed. The results illustrated the dominance of MRTD method over FDTD in terms of accuracy.
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Neirynck, J. M., R. J. Gutmann, and S. P. Murarka. "Copper/Benzocyclobutene Interconnects for Sub‐100 nm Integrated Circuit Technology: Elimination of High‐Resistivity Metallic Liners and High‐Dielectric Constant Polish Stops." Journal of The Electrochemical Society 146, no. 4 (April 1, 1999): 1602–7. http://dx.doi.org/10.1149/1.1391812.
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Sharma, Himanshu, and Karmjit Singh Sandha. "Impact of Intercalation Doping on the Conductivity of Multi-Layer Graphene Nanoribbon (MLGNR) in On-Chip Interconnects." Journal of Circuits, Systems and Computers 29, no. 12 (February 5, 2020): 2050185. http://dx.doi.org/10.1142/s0218126620501856.
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Graphene nanoribbons are considered potentially suitable and have exhibited excellent results in on-chip interconnects. In order to evaluate the different circuit impedance parameters of multi-layer graphene nanoribbons (MLGNRs), an electrical equivalent single conductor (ESC) along with an analytical model is proposed. On the basis of an electrical model, the impact of intercalation doping on the performance of MLGNRs at 32, 22, and 16[Formula: see text]nm technology nodes is discussed in this paper. Moreover, it is also discussed that the increase in intercalation doping increases the Fermi energy of the layers of the MLGNR, which increases its overall conductivity. The fact that the variation in the Fermi energy will have a considerable impact on the parasitic parameters of the MLGNR interconnect at three different technology nodes (32, 22, and 16[Formula: see text]nm) for variable global lengths (500–2000[Formula: see text][Formula: see text]m) is also analyzed. To estimate and compare the performance in terms of delay and power delay product (PDP) of MLGNRs, the simulation program with integrated circuit emphasis (SPICE) simulation tool is used. The results also show that the increase in the Fermi energy improves the performance of MLGNRs in terms of delay and PDP at three different technology nodes. Furthermore, a comparative analysis of all three technology nodes is performed with the copper interconnect, and it is revealed that the MLGNR interconnect is considered to be a prominent material for the next-generation on-chip very-large-scale integration interconnects.
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Khursheed, Afreen, and Kavita Khare. "Designing dual-chirality and multi-Vt repeaters for performance optimization of 32 nm interconnects." Circuit World 46, no. 2 (January 13, 2020): 71–83. http://dx.doi.org/10.1108/cw-06-2019-0060.
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Purpose This paper is an unprecedented effort to resolve the performance issue of very large scale integrated circuits (VLSI) interconnects encountered because of the scaling of device dimensions. Repeater interpolation technique is an effective approach for enhancing speed of interconnect network. Proposed buffers as repeater are modeled by using dual chirality multi-Vt technology to reduce delay besides mitigating average power consumption. Interconnects modeled with carbon nanotube (CNT) technology are compared with copper interconnect for various lengths. Buffer circuits are designed with both CNT and metal oxide semiconductor technology for comparison by using various combination of (CMOSFET repeater-Cu interconnect) and (CNTFET repeater-CNT interconnect). Compared to conventional buffer, ProposedBuffer1 saves dynamic power by 84.86%, leakage power by 88% and offers reduction in delay by 72%. ProposedBuffer2 brings about dynamic power saving of 99.94%, leakage power saving of 93%, but causes delay penalty. Simulation using Stanford SPICE model for CNT and silicon-field effective transistor berkeley short-channel IGFET Model4 (BSIM4) predictive technology model (PTM) for MOS is done in H simulation program with integrated circuit emphasis for 32 nm. Design/methodology/approach Usually, the dynamic power consumption dominates the total power, while the leakage power has a negligible effect. But with the scaling of device technology, leakage power has become one of the important factors of consideration in low power design techniques. Various strategies are explored to suppress the leakage power in standby mode. The adoption of a multi-threshold design strategy is an effective approach to improve the performance of buffer circuits without compromising on the delay and area overhead. Unlike MOS technology, to implement multi-Vt transistors in case of CNT technology is quite easy. It can be achieved by varying diameter of carbon nanotubes using chirality control. Findings An unprecedented approach is taken for optimizing the delay and power dissipation and hence drastically reducing energy consumption by keeping proper harmony between wire technology and repeater-buffer technology. This paper proposes two novel ultra-low power buffers (PB1 and PB2) as repeaters for high-speed interconnect applications in portable devices. PB1 buffer implemented with high-speed CML technique nested with multi-threshold (Vt) technology sleep transistor so as to improve the speed along with a reduction in standby power consumption. PB2 is judicially implemented by inserting separable sized, dual chirality P type carbon nanotube field effective transistors. The HSpice simulation results justify the correctness of schemes. Originality/value Result analysis points out that compared to conventional Cu interconnect, the CNT interconnects paired with Proposed CNTFET buffer designs are more energy efficient. PB1 saves dynamic power by 84.86%, reduces propagation delay by 72% and leakage power consumption by 88%. PB2 brings about dynamic power saving of 99.4%, leakage power saving of 93%, with improvement in speed by 52%. This is mainly because of the fact that CNT interconnect offers low resistance and CNTFET drivers have high mobility and ballistic mode of operation.
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Merschky, Michael, Fabian Michalik, Martin Thoms, Robin Taylor, Diego Reinoso-Cocina, Stephan Hotz, and Patrick Brooks. "Using a Metal Oxide Adhesion Layer and Wet Chemical Cu Metallization for Fine Line Pattern Formation on Glass." International Symposium on Microelectronics 2017, no. 1 (October 1, 2017): 000458–63. http://dx.doi.org/10.4071/isom-2017-wp51_084.
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Abstract With the trends towards miniaturization and heterogeneous integration, both IC and advanced substrate manufacturers are striving to meet the needs of next generation platforms, to increase the density of interconnects, and generate conductors featuring finer lines and spaces. Advanced manufacturing technologies such as Semi-Additive-Processing (SAP) and Advanced Modified-Semi-Additive-Processing (amSAP) were devised, realized and implemented in order to meet these requirements. Line and space (L/S) requirements of copper conductors will be below 5/5μm for advanced substrates, with 2/2μm L/S required for chip to chip connections in the near future. Herein we report about the performance of the new developed ferric sulfate based EcoFlash™ process for SAP and amSAP application with the focus on glass as the substrate and VitroCoat as thin metal oxide adhesion promotion layer. The adhesion promotion layer (about 5–10 nm thickness) is dip-coated by a modified sol-gel process followed by sintering which creates chemical bonds to the glass. The sol-gel dip coating process offers good coating uniformity on both Though-Glass-Via (TGV) and glass surfaces under optimized coating conditions. Uniform coating can be achieved up to aspect ratios of 10:1 by using a 300μm thick glass with 30μm diameter TGV. The thin adhesive layer enables electroless and electrolytic copper plating directly onto glass substrates. Excellent adhesion of electroless plated copper seed layer on glass can be achieved by using the adhesive layer and annealing technology. The thin adhesive layer is non-conductive and can be easily removed from the area between circuit traces together with the electroless copper seed layer by etching with a ferric sulfate based process. We have successfully integrated the adhesion layer and electroless and electrolytic copper plating technologies into semi-additive process and seed layer etching capable producing L/S below 10 μm.
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Flemming, Jeb, Kyle McWethy, Tim Mezel, Luis Chenoweth, and Carrie Schmidt. "Photosensitive Glass-Ceramics for Heterogeneous Integration." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2019, DPC (January 1, 2019): 000880–907. http://dx.doi.org/10.4071/2380-4491-2019-dpc-presentation_wp1_036.
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The push for heterogeneous integration requires very unique material properties with respect to processing, material constants, and integration capabilities with other materials (such as copper, III–V, magnetics, etc.). Current common circuit board materials such as ceramics and laminates, as well as silicon substrates, suffer from a variety of limitations. For ceramics and laminates, these constraints include: (1) the inability to produce narrow line widths <100 m with narrow gaps between lines <100 m; (2) high surface roughness (on the order of 2μm RMS); (3) layer-to-layer misalignments; and (4) lack of high-quality integrated passives. For silicon, these constraints include: (1) high cost; (2) long design/production lead times; and (3) electrical properties of standard doped silicon are not suitable for millimeter-wave applications. A significant drawback of ceramics and laminates is that they cannot be 3D structured with micron-scale precision which is necessary for advanced interconnects for millimeter-wave IC packaging integration (e.g. transistor-to-board interconnects). These characteristics lead to devices with limited integration options, large footprints, and higher power consumption. To overcome the above limitations, 3D Glass Solutions (3DGS) has developed a photo-sensitive glass ceramics as a board-level system substrate. Compared to ceramics, laminates, and silicon, photo-sensitive glass ceramic materials offer higher interconnect densities, lower processing cost, better spatial resolution, as well as improved electrical properties for both RF and millimeter-wave frequencies. Photo-sensitive glass ceramics are ideal systems-level materials for heterogeneous integration programs as they overcome many of the limitations of legacy materials such as ceramics and laminates for broadband applications (DC – 100GHz). Furthermore, the advanced manufacturing ability of photo-sensitive glass ceramics enable a broad category of IP Blocks. The innovations of the 3DGS technology and research effort include:Low loss and low dispersion: photosensitive glass material has a measured loss tangent of 0.008 at GHz frequencies. Furthermore, the thick and highly-conductive metallization layers allow for low-loss transmission lines.High current and power handling: the metallization processes enable lines with a range of thicknesses (<50m) and widths (>2m), which result in both low resistive loss and high current handling. Additionally, the RF power handling is high due to the high breakdown voltage of glass (10kV/100m) and the possibility of coaxial line integration.Thermal management: high-density metal-filled via arrays generate up to 100W/mK thermal transfer in the 3DGS process and provide an additional thermal path for chips that are not mounted directly on a heterogeneous interface heat spreader.Built-in filtering: when a variety of chiplets with unknown design parameters and with signals of varying time constants are interconnected, EMI becomes a significant problem. The 3DGS approach allows for high-quality filtering, coupling and self-assessment functions to be directly integrated within the 2.5D interposer system as IPDs eliminating wire bonding and providing seamless integration with low loss.Scalability: the glass interconnect plane can be fabricated with footprints up to 40mm × 40mm with integrated air cavities for chip placement, through glass vias for I/Os and redistribution metal. In this presentation, 3DGS will present on three Heterogeneous Integration attributes: (1) design considerations, (2) integration of passive devices, and (3) millimeter wave integration. Design Considerations 3DGS is developing an IP Block library with 11 distinct categories. These categories include: (1) metal filled I/Os, (2) copper redistribution layers, (3) thermal management blocks, (4) cavities, (5) metal filled through glass structures, (6) phased array antenna, (7) conductor undercuts, (8) magnetic core devices, (9) capacitors, (10) inductors, and (11) grounding. While each of these unique IP Blocks contributes their own advantages for analog performance, they can all be integrated into a single chip. Integration of Passives Devices The foundation of the work done by 3DGS is on developing a volume manufacturing approach for high uniformity through glass vias (TGVs). All TGVs for I/O applications are 100% copper filled for low-loss, high power, electrical connections. Two major building blocks of 3DGS' Heterogeneous technology are High Quality Factor inductors and capacitors. 3DGS has developed a broad library of inductor components ranging from 0.5 – 200nH. Footprints are determined by inductance sizes but may be as small as 01005. Capacitors are built by placing two slots inside of the glass material, filling the slots with copper, and using the glass' natural Dk to form a capacitor. The benefit of these capacitors include high breakdown voltage (>1,000V), small footprint, high reliability, and Quality factors between 200–300. Inductors and capacitors can be integrated into a single monolithic RF package called an Integrated Passive Device (IPD). The benefits of the IPD include the elimination of RF losses associated with PCB Interconnects, long metal redistribution line lengths, bond pads, solder balls, and inconsistent assembly. This leads to the production of RF devices, capable of operating in the MHz – GHz frequency range with higher overall system Quality Factors, lower ripple, and lower losses. Furthermore, IPDs can be directly integrated into more complex System-in-Package (SiP) architectures. This approach has been used to build an RF ZigBee module in APEX® Glass [1]. The glass SiP module consisted of 35+ SMT components and was itself soldered to a PCB board. The full RF module was then subjected full complement of reliability tests and met the customer's stringent performance goals. Millimeter Wave Integration A major benefit of glass is the ability to produce low loss structures for millimeter wave applications. 3DGS has been designing and producing a variety of millimeter wave band pass filters with a variety of bandwidths ranging from 5–40%. These bandpass filters are compact, fully shielded and low loss (<2.0dB) with high attenuation (>50dB).
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O'Keefe, T., M. Stroder, and M. O'Keefe. "Organically Deposited Metallic Films for Device Fabrication." MRS Proceedings 514 (1998). http://dx.doi.org/10.1557/proc-514-473.
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ABSTRACTAdvances in integrated circuit density, speed and complexity are dependent on lower resistance, finer line width on-chip interconnections. Methods for incorporating copper interconnects into IC fabrication processes have been developed which accomplish this objective but most of these methods use some form of blanket metal deposition that requires mechanical and/or chemical removal of excess material. To date, investigations into the selective deposition of conductor materials for device fabrication have met with limited success. A new process for selectively depositing metallic conductors using inexpensive, organic-based chemical solutions could potentially force a paradigm shift in the deposition of metals for microelectronic applications. Reversing the process currently used for selectively removing impurities from metal bearing waste streams, electrochemically controlled deposition of metals from electrically non-conducting organic solutions on submicron feature sizes is possible. A description of the fundamental electrochemical processes involved and parameter space available to engineer the solution chemistry will be presented along with experimental results from model systems. A discussion of the technology in light of ULSI issues and applications will be included.
Dissertations / Theses on the topic "Interconnects (Integrated circuit technology) Copper Electrodiffusion"
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Khan, Sadia Arefin. "Electromigration analysis of high current carrying adhesive-based copper-to-copper interconnections." Thesis, Georgia Institute of Technology, 2012. http://hdl.handle.net/1853/44885.
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"More Than Moore's Law" is the driving principle for the electronic packaging industry. This principle focuses on system integration instead of transistor density in order to achieve faster, thinner, and smarter electronic devices at a low cost. A core area of electronics packaging is interconnection technology, which enables ultra-miniaturization and high functional density. Solder bump technology is one of the original, and most common interconnection methods for flip chips. With growing demand for finer pitch and higher number of I/Os, solder bumps have been forced to smaller dimensions and therefore, are subjected to higher current densities. However, the technology is now reaching its fundamental limitations in terms of pitch, processability, and current-handling due to electromigration. Electromigration in solder bumps is one of the major causes of device failures. It is accelerated by many factors, one of which is current crowding. Current crowding is the non-uniform distribution of current at the interface of the solder bump and under-bump metallurgy, resulting in an increase in local current density and temperature. These factors, along with the formation of intermetallic compounds, can lead to voiding and ultimately failure. Electromigration in solder bumps has prevented pitch-scaling below 180-210 microns, producing a shift in the packaging industry to other interconnection approaches, specifically copper pillars with solder. This research aims to explore the electromigration resistance of an adhesive-based copper-to-copper (Cu-Cu) interconnection method without solder, which is thermo-compression bonded at a low temperature of 180C. While solder bumps are more susceptible to electromigration, Cu is capable of handling two orders of magnitude higher current density. This makes it an ideal candidate for next generation flip chip interconnections.
Using finite element analysis, the current crowding and joule heating effects were evaluated for a 30 micron diameter Cu-Cu interconnection in comparison with two existing flip chip interconnection techniques, Cu pillar with solder and Pb-free solder. A test vehicle (TV) was fabricated for experimental analysis with 760 bumps arranged in an area-array format with a bump diameter of 30 micron. Thermo-mechanical reliability of the test vehicle was validated under thermal cycling from -55C to 125C. The Cu-Cu interconnections were then subjected to high current and temperature stress from 1E4 to 1E6 amps per square centimeter at a temperature of 130C. The results establish the high thermo-mechanical reliability and high electromigration resistance of the proposed Cu-Cu interconnection technology.
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Sekar, Deepak Chandra. "Optimal signal, power, clock and thermal interconnect networks for high-performance 2d and 3d integrated circuits." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/26562.
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Thesis (Ph.D)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009.Committee Chair: Meindl, James; Committee Co-Chair: Davis, Jeffrey; Committee Member: Callen, Russell; Committee Member: Gaylord, Thomas; Committee Member: Kohl, Paul; Committee Member: Mukhopadhyay, Saibal. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Osborn, Tyler Nathaniel. "All-copper chip-to-substrate interconnects for high performance integrated circuit devices." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28211.
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Thesis (M. S.)--Chemical Engineering, Georgia Institute of Technology, 2009.Committee Chair: Kohl, Paul; Committee Member: Bidstrup Allen, Sue Ann; Committee Member: Fuller, Thomas; Committee Member: Hesketh, Peter; Committee Member: Hess, Dennis; Committee Member: Meindl, James.
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Jha, Gopal Chandra. "Copper to copper bonding by nano interfaces for fine pitch interconnections and thermal applications." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/22588.
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Darmakkolla, Srikar Rao. "Copper Nanowires Synthesis and Self-Assembly for Interconnect Applications." PDXScholar, 2017. https://pdxscholar.library.pdx.edu/open_access_etds/4034.
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One-dimensional (1D) nanomaterial self-assembly offers an excellent approach to the fabrication of highly complex nanodevices. Despite considerable effort and research, precisely controlling the orientation and positioning of nanowires (NWs) on a large-scale area and assembling into a functional device is still a state of the art problem. This thesis focuses on the dimensionally controlled copper nanowires (Cu NWs) synthesis, and magnetic field assisted self-assembly of cupronickel nanowires (Cu/Ni NWs) into interconnect structures on a carbon doped silicon dioxide (CDO) wafer.
CDO is a low dielectric constant (k) material used for copper interconnects in multilayered complex integrated circuits (ICs). Here, a strong affinity of copper (Cu) and nickel (Ni) to thiol (-SH) functional groups were exploited to strongly adhere the nanowires (Cu/Ni NWs) onto the CDO substrate. Thiol (-SH) functionalization of the CDO surface was achieved via a series of reactions involving (1) esterification of the surface exposed ≡Si-OH functional group to its triflate (≡Si-O-Tf), (2) reduction of triflate to ≡Si-H using DIBAL-H, and (3) hydrosilylation of ≡Si-H using 2-propene thiol (≡Si-(CH2)3-SH) in a photochemical reaction. The thiol functionalization of CDO surface enhances the interaction of Cu/Ni NWs with strong chemical bonds. The same reaction scheme was also used in the functionalization of the hydrophilic (Si-OH) surface to the hydrophobic long alkyl chain derivatized (≡Si-CH2-(CH2)16-CH3) surface. This long alkyl chain modified surface acts as an excellent moisture resistant film, which helps to maintain the low-k value of CDO.
The dimensionally controlled Cu NWs were synthesized by a wet chemical approach. Optimization of the reducing agent, hydrazine (N2H4), controlled the surface morphology of nanowires (NWs). Interestingly, the high concentration of reducing agent produced particle decorated and/or with a rough NW surface, and conversely decreasing its concentration resulted in a comparatively thin, particle-free and smooth surface. The reaction temperature affected the aspect ratio (Length/Diameter) of the NWs. As the reaction temperature increased from 60 to 90 °C, the aspect ratio decreased from 140 to 21.
Controlling the orientation of Cu NWs in a magnetic field was accomplished by coating them with a thin layer (~20 nm) of ferromagnetic nickel (Ni). This Ni-coated NWs showed an excellent degree of alignment (half-width ≈10 degrees) in the direction of an applied magnetic field over a large surface area at field strength as low as 2500 Gauss. Also, the Ni coating helped in protecting the copper core from oxidation resulting in better electrical wire-to-wire contacts.
A nanowire-based interconnect channel was fabricated by combining magnetic field assisted alignment and deposition of aligned NWs on a thiol-modified and photolithography patterned CDO substrate. The NWs, deposited in the trenches, strongly bonded to the thiol-derivatized CDO substrate while an acetone wash removed loosely bound NWs on the photoresist surface. In electrical characterization, the directionally well-aligned Cu/Ni NWs channel displayed surprisingly two-fold higher conductivity than randomly arranged NWs channel.
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Okereke, Raphael Ifeanyi. "Electroplated multi-path compliant copper interconnects for flip-chip packages." Diss., Georgia Institute of Technology, 2014. http://hdl.handle.net/1853/51800.
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The international technology roadmap for semiconductors (ITRS) 2012 report foresees the use of porous dielectric materials with a low dielectric constant in conjunction with copper interconnects as a way to reduce the resistive-capacitive (RC) delay in microelectronic applications. However, the introduction of pores in the dielectric not only serves as stress raisers but also diminishes the structural strength of the material. The challenge therefore with the implementation of low-k dielectrics for high-performance flip-chip packages is to create a reliable die to organic substrate interconnect solution which induces low stresses on the die to prevent the cohesive cracking and the interfacial delamination of the dielectric material.
Potential interconnect solutions that meet this challenge are MEMS-like compliant freestanding micro-structures. These structures are designed to work as spring-like elements which allow the free lateral and out-of-plane motion between the silicon die and the organic substrate under assembly conditions as well as under thermal or power cycling. Thus, the focus of this research is to design, fabricate, and characterize electrically and mechanically an innovative compliant interconnect approach that addresses these challenges.
The proposed interconnect is scalable in dimensions and pitch, and consists multiple electrical paths which will provide redundancy against interconnect failure. The multi-path design employs parallel electrical paths which effectively split a larger cross-sectional area into several smaller areas making the overall design more compliant than otherwise. This research proposes wafer-level, high-yield, CMOS-compatible fabrication procedure using sequential photolithography and copper electroplating. The proposed interconnects are symmetric and are amenable to easy reflow assembly to substrates. The mechanical compliance of the fabricated structures is studied through nano-indentation, while the electrical characteristics are assessed through fabricated prototypes. The
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thermo-mechanical reliability of compliant interconnects is also demonstrated. Lastly, the dimensional scalability of the interconnects is also demonstrated.
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Koh, Sau W. "Fatigue modeling of nano-structured chip-to-package interconnections." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2009. http://hdl.handle.net/1853/28263.
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Thesis (M. S.)--Materials Science and Engineering, Georgia Institute of Technology, 2009.Committee Chair: Rao R. Tummala; Committee Co-Chair: Ashok Saxena; Committee Member: Karl Jacob; Committee Member: Suresh Sitaraman; Committee Member: Thomas H. Sanders, Jr.
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Wu, Fangyu. "Hydrogen-based plasma etch of copper at low temperature." Diss., Georgia Institute of Technology, 2011. http://hdl.handle.net/1853/43617.
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Although copper (Cu) is the preferred interconnect material due to its lower resistivity than aluminum (Al), Cu subtractive etching processes have not been developed at temperatures less than 180 °C, primarily due to the inability to form volatile etch products at low temperature. The conventional damascene technology avoids the need for subtractive etching of Cu by electroplating Cu into previously etched dielectric trenches/vias, followed by a chemical/mechanical planarization (CMP) process. However, a critical "size effect" limitation has arisen for damascene technology as a result of the continuing efforts to adhere to "Moore's Law". The size effect relates to the fact that the resistivity of damascene-generated lines increases dramatically as the line width approaches the sub-100 nm regime, where feature size is similar to the mean free path of electrons in Cu (40 nm). As a result, an alternative Cu patterning process to that of damascene may offer advantages for device speed and thus operation.
This thesis describes investigations into the development of novel, fully-plasma based etch processes for Cu at low temperatures (10 °C). Initially, the investigation of a two-step etch process has been studied. This etch approach was based on a previous thermodynamic analysis of the Cu-Cl-H system by investigators at the University of Florida. In the first step, Cu films are exposed to a Cl₂ plasma to preferentially form CuCl₂, which is believed to be volatilized as Cu₃Cl₃ by subsequent exposure to a hydrogen (H₂) plasma (second step). Patterning of Cu films masked with silicon dioxide (SiO₂) layers in an inductively coupled plasma (ICP) reactor indicates that the H₂ plasma step in the two-step process is the limiting step in the etch process. This discovery led to the investigation of a single step Cu etch process using a pure H₂ plasma. Etching of blanket Cu films and Cu film patterning at 10°C, display an etch rate ~ 13 nm/min; anisotropic etched features are also observed. Comparison of H₂ plasma etching to sputtering of Cu films in argon (Ar) plasmas, indicates that both a chemical component and a physical component are involved in the etching mechanism. Additional studies using helium plasmas and variation of power applied to the plasma and etching surface demonstrate that the etch rate is controlled by reactive hydrogen species, ion bombardment flux and likely photon flux. Optical Emission Spectroscopy (OES) of the H₂ plasma during the Cu etching process detects Cu emission lines, but is unable to identify specific Cu etch products that desorb from the etching surface. Variation of Cu etch rates as a function of temperature suggests a change in mechanism for the removal of Cu over the temperature of -150 °C to 150 °C. OES analyses also suggest that the Cl₂ plasma step in the two-step process can inhibit Cu etching, since the subsequent H₂ (second) plasma step shows a time delay in film removal. Preliminary results of the etching of the SiO₂ mask material in H₂ plasmas with various intentionally introduced contaminants demonstrate the robustness of the H₂ plasma Cu etch process.
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Mehrotra, Gaurav. "Ultra thin ultrafine-pitch chip-package interconnections for embedded chip last approach." Thesis, Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/22594.
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Mistkawi, Nabil George. "Fundamental Studies in Selective Wet Etching and Corrosion Processes for High-Performance Semiconductor Devices." PDXScholar, 2010. https://pdxscholar.library.pdx.edu/open_access_etds/6.
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As multistep, multilayer processing in semiconductor industry becomes more complex, the role of cleaning solutions and etching chemistries are becoming important in enhancing yield and in reducing defects. This thesis demonstrates successful formulations that exhibit copper and tungsten compatibility, and are capable of Inter Layer Dielectric (ILD) cleaning and selective Ti etching. The corrosion behavior of electrochemically deposited copper thin films in deareated and non-dearated cleaning solution containing hydrofluoric acid (HF) has been investigated. Potentiodynamic polarization experiments were carried out to determine active, active-passive, passive, and transpassive regions. Corrosion rates were calculated from tafel slopes. ICP-MS and potentiodynamic methods yielded comparable Cu dissolution rates. Interestingly, the presence of hydrogen peroxide in the cleaning solution led to more than an order of magnitude suppression of copper dissolution rate. We ascribe this phenomenon to the formation of interfacial CuO which dissolves at slower rate in dilute HF. A kinetic scheme involving cathodic reduction of oxygen and anodic oxidation of Cu0 and Cu+1 is proposed. It was determined that the reaction order kinetics is first order with respect to both HF and oxygen concentrations. The learnings from copper corrosion studies were leveraged to develop a wet etch/clean formulation for selective titanium etching. The introduction of titanium hard-mask (HM) for dual damascene patterning of copper interconnects created a unique application in selective wet etch chemistry. A formulation that addresses the selectivity requirements was not available and was developed during the course of this dissertation. This chemical formulation selectively strips Ti HM film and removes post plasma etch polymer/residue while suppressing the etch rate of tungsten, copper, silicon oxide, silicon carbide, silicon nitride, and carbon doped silicon oxide. Ti etching selectivity exceeding three orders of magnitude was realized. Surprisingly, it exploits the use of HF, a chemical well known for its SiO2 etching ability, along with a silicon precursor to protect SiO2. The ability to selectively etch the Ti HM without impacting key transistor/interconnect components has enabled advanced process technology nodes of today and beyond. This environmentally friendly formulation is now employed in production of advanced high-performance microprocessors and produced in a 3000 gallon reactor.
Books on the topic "Interconnects (Integrated circuit technology) Copper Electrodiffusion"
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S, Ho P., ed. Stress-induced phenomena in metallization: Seventh International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 14-16 June 2004. Melville, N.Y: American Institute of Physics, 2004.
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Hübner, René. Advanced Ta-based diffusion barriers for Cu interconnects. New York: Nova Science Publishers, 2009.
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Hubner, Rene. Advanced Ta-based diffusion barriers for Cu interconnects. New York: Nova Science Publishers, 2008.
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Electromigration in thin films and electronic devices: Materials and reliability. Oxford: Woodhead Publishing, 2011.
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Kondo, K. Morphological evolution of electrodeposits and electrochemical processing in ULSI fabrication and electrodeposition of and on semiconductors IV: Proceedings of the international symposia. Edited by Electrochemical Society Electrodeposition Division, Electrochemical Society. Dielectric Science and Technology Division, Electrochemical Society Electronics Division, and Electrochemical Society Meeting. Pennington, NJ: Electrochemical Society, 2005.
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International, Workshop on Stress-Induced Phenomena in Metallization (10th 2008 Austin Texas). Stress-induced phenomena in metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 5-7 November 2008. Melville, N.Y: American Institute of Physics, 2009.
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International, Workshop on Stress-Induced Phenomena in Metallization (9th 2007 Kyoto Japan). Stress-induced phenomena in metallization: Ninth International Workshop on Stress-Induced Phenomena in Metallization, Kyoto, Japan 4 - 6 April 2007. Melville, N.Y: American Institute of Physics, 2007.
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International Workshop on Stress-Induced Phenomena in Metallization (11th 2010 Bad Schandau, Germany). Stress-induced phenomena in metallization: Eleventh International Workshop on Stress-Induced Phenomena in Metallization, Bad Schandau, Germany, 12-14 April 2010. Edited by Zschech Ehrenfried, Ho P. S, and Ogawa Shinʼichi. Melville, N.Y: American Institute of Physics, 2010.
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International Workshop on Stress-Induced Phenomena in Metallization (10th 2008 Austin, Texas). Stress-induced phenomena in metallization: Tenth International Workshop on Stress-Induced Phenomena in Metallization, Austin, Texas, 5-7 November 2008. Edited by Ho P. S, Ogawa Shinichi Dr, and Zschech Ehrenfried. Melville, N.Y: American Institute of Physics, 2009.
Find full textBook chapters on the topic "Interconnects (Integrated circuit technology) Copper Electrodiffusion"
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Sandha, Karmjit Singh. "CNT as Interconnects." In Advances in Computer and Electrical Engineering, 130–59. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-7998-1393-4.ch007.
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The chapter will start with brief introduction to the interconnects and its importance in an integrated circuit at deep sub-micron technology nodes. The brief discussion about the concept of scaling, interconnects models, and material in use are presented. The limitations of conventional materials at scaled down technology nodes will be discussed next. The focus of the chapter is to present the electrical equivalent circuit model to estimate the impedance parameters of SWCNT bundle and MWCNT bundle as interconnects at different nano-scaled technology nodes for global level interconnect length. Using ESC model of SWCNT, MWCNT, and copper, the performance comparative analysis for delay and power delay product (PDP) will be presented for different interconnect lengths at nano-scaled technology nodes. Finally, the chapter summary and conclusion will be written at the end of the chapter.
Conference papers on the topic "Interconnects (Integrated circuit technology) Copper Electrodiffusion"
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Zhu, Lin, and Hong-xia Liu. "DC and pulsed DC stress evolution in copper interconnects." In 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings. IEEE, 2006. http://dx.doi.org/10.1109/icsict.2006.306250.
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Ladani, Leila J., and Omar Rodriguez. "Thermo-Mechanical Reliability of Through Silicon Vias (TSVs) and Solder Interconnects in 3-Dimensional Integrated Circuits." In ASME 2009 InterPACK Conference collocated with the ASME 2009 Summer Heat Transfer Conference and the ASME 2009 3rd International Conference on Energy Sustainability. ASMEDC, 2009. http://dx.doi.org/10.1115/interpack2009-89056.
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3-dimensional integrated circuit (3D IC) is a promising technology in today’s IC packaging industry. Since the technology is in infancy stages, many aspects of this technology are still under heavy investigation. Reliability of through silicon via (TSV) interconnects and interlayer bonding between the silicon layers are issues that become more complicated in 3D ICs due to complexity of the architecture and miniaturized interconnects. Optimizing design of these devices is essential in order to avoid short fatigue life of interconnects. This manuscript addresses the impact of design parameters such as die thickness, TSV diameter, TSV pitch, underfill thickness and underfill properties on thermo-mechanical durability of Direct Chip Attach (DCA) solder joints and TSV interconnects used in a 3D IC packages. A design was proposed where DCA is used to connect 4 layers of ICs and TSVs are used to connect the active layer of the dies to the second silicon layer. Solder joints, as small as 50-micron diameter, were used to attach silicon layers. A numerical experiment is designed to vary design parameters at 3 levels using L9 ortagonal array. A 3-dimensional model of the package was built and model was solved under an accelerated temperature cycle loading. Solder is considered as visco-plastic material and copper interconnects are assumed to follow bilinear isotropic hardening behavior. Two continuum damage models, energy partitioning and Coffin-Manson models, were used to assess the number of cycles to failure for solder joints and TSV copper interconnects respectively. Minitab software was used to analyze the result of experiment. The most influential factors on durability of solder interconnect are found to be underfill properties and height. However, the most influential factor on TSV durability is found to be TSV diameter. A non-linear response was observed for TSV pitch and diameter indicating that the optimum level may be in the range selected.
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Mirza, Fahad, Thiagarajan Raman, Saeed Ghalambor, Ashraf Bastawros, and Dereje Agonafer. "Coupled Computational Thermal and Mechanical Analysis of a Single Chip Flip Chip Module With Low-k Dielectric Medium." In ASME 2011 International Mechanical Engineering Congress and Exposition. ASMEDC, 2011. http://dx.doi.org/10.1115/imece2011-63670.
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Miniaturization and more recently convergence have been driving the industry since the invention of the transistor and integrated circuit (IC). While gate delay has decreased with transistor scaling, the increase in the resistive capacitive (RC) delay due to shrinking interconnect dimensions has become a serious concern for the development of future-generation electronics. To reduce the delay due to resistance R, a major technology change was the replacement of Aluminum (Al) with Copper (Cu) interconnects. Recently, some investigators have suggested using low-k dielectric (having dielectric constant less than 4) instead of Silicon dioxide (k = 3.9) to reduce the capacitive component in the RC delay. Recent research has shown low-k materials to have characteristics such as low mechanical strength and adhesion. In this paper, thermo-mechanical analysis of a single chip flip-chip module (SCM) consisting of a die integrated with low-k dielectric medium, substrate, solder balls, and a printed circuit board (PCB) is performed. The analysis is done in two steps within the ANSYS finite element software to account for thermally induced stresses due to mismatch in thermal expansion coefficient. In the first step, the thermal analysis is carried out to derive the steady state temperature distribution within the package under the imposed power rating. In the second step, the evaluated temperature field is utilized in a coupled thermo-mechanical structural analysis. The developed framework is utilized to study the thermo-mechanical behavior of various low-k dielectrics, wherein the stresses and strain distributions within the chip region are quantified. The analysis has shown no change in the temperature distribution between the base case of Silicon dioxide (SiO2) and low-k materials. The maximum equivalent stress in the package, for all the four dielectric cases (SiO2, polyimide, Hydrogen Silsesquioxane, and Black diamond) is seen in the silicon region of the die and that it does not change with the dielectric materials. However, the maximum equivalent stress in the low-k/metal layers varies with the materials but is always few orders of magnitude less than their corresponding yield strengths. Comparative analysis between Silicon dioxide (SiO2) and different low-k materials will help in identifying the weak spots in low-k dielectric when exposed to standard user environments.