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Journal articles on the topic 'Interface measurements'

Author: Grafiati

Published: 14 December 2024

Last updated: 19 July 2025

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1

Tomar, Vikas, and Ritesh Sachan. "Interface Strength Measurements." JOM 69, no. 1 (2016): 12. http://dx.doi.org/10.1007/s11837-016-2158-9.

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Arpaia, Pasquale, Lucio Fiscarelli, and Giuseppe Commara. "Advanced User Interface Generation in the Software Framework for Magnetic Measurements at Cern." Metrology and Measurement Systems 17, no. 1 (2010): 27–37. http://dx.doi.org/10.2478/v10178-010-0003-y.

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Advanced User Interface Generation in the Software Framework for Magnetic Measurements at CernA model-based approach, the Model-View-Interactor Paradigm, for automatic generation of user interfaces in software frameworks for measurement systems is proposed. The Model-View-Interactor Paradigm is focused on the "interaction" typical in a software framework for measurement applications: the final user interacts with the automatic measurement system executing a suitable high-level script previously written by a test engineer. According to the main design goal of frameworks, the proposed approach a

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Alfreider, Markus, Johannes Zechner, and Daniel Kiener. "Addressing Fracture Properties of Individual Constituents Within a Cu-WTi-SiOx-Si Multilayer." JOM 72, no. 12 (2020): 4551–58. http://dx.doi.org/10.1007/s11837-020-04444-6.

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AbstractWith modern materials applications continually decreasing in size, e.g., microelectronics, sensors, actuators, and medical implants, quantifying materials parameters becomes increasingly challenging. Specifically, addressing individual constituents of a system, such as interfaces or buried layers in a multilayer structure, emerges as a topic of great importance. We demonstrate herein a technique to assess fracture parameters of different interfaces of a Cu-WTi-SiOx-Si model system based on in situ microcantilever testing in a scanning electron microscope. Positioning the initial notch

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Josell, D., J. E. Bonevich, I. Shao, and R. C. Cammarata. "Measuring the interface stress: Silver/nickel interfaces." Journal of Materials Research 14, no. 11 (1999): 4358–65. http://dx.doi.org/10.1557/jmr.1999.0590.

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Interface stress is a surface thermodynamics quantity associated with the reversible work of elastically straining an internal solid interface. In a multilayered thin film, the combined effect of the interface stress of each interface results in an in-plane biaxial volume stress acting within the layers of the film that is inversely proportional to the bilayer thickness. We calculated the interface stress of an interface between {111} textured Ag and Ni on the basis of direct measurements of the dependence of the in-plane elastic strains on the bilayer thickness. The strains were obtained usin

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Schramm, Andreas Tobias, Frauke Kathinka Helene Gellersen, and Karsten Kuhlmann. "Uncertainties of S-Parameter Measurements in Rectangular Waveguides at PTB." Advances in Radio Science 22 (November 8, 2024): 35–45. http://dx.doi.org/10.5194/ars-22-35-2024.

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Abstract. In this work the determination of measurement uncertainties in scattering parameter measurements for waveguide interfaces ranging from R 100 (WR 90) to R 2.6k (WR 3, WM-864) is presented. For each waveguide band a Thru Reflect Line calibration is performed including uncertainties for calibration standards, cable movement, interface repeatability and the characteristics of the vector network analyzer. For reflection and transmission coefficients, envelopes of uncertainties are determined for magnitude and phase angle respectively. In addition, an experiment on connection (interface) r

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Fiorenza, Patrick, Filippo Giannazzo, and Fabrizio Roccaforte. "Characterization of SiO2/4H-SiC Interfaces in 4H-SiC MOSFETs: A Review." Energies 12, no. 12 (2019): 2310. http://dx.doi.org/10.3390/en12122310.

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This paper gives an overview on some state-of-the-art characterization methods of SiO2/4H-SiC interfaces in metal oxide semiconductor field effect transistors (MOSFETs). In particular, the work compares the benefits and drawbacks of different techniques to assess the physical parameters describing the electronic properties and the current transport at the SiO2/SiC interfaces (interface states, channel mobility, trapping phenomena, etc.). First, the most common electrical characterization techniques of SiO2/SiC interfaces are presented (e.g., capacitance- and current-voltage techniques, transie

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Kakiuchi, Takashi, and Mitsugi Senda. "Polarizability and nonpolarizability of oil-water interfaces with relevance to a.c. impendance measurements." Collection of Czechoslovak Chemical Communications 56, no. 1 (1991): 112–29. http://dx.doi.org/10.1135/cccc19910112.

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We have estimated the degree of polarizability of a polarized oil-water interface used as a working interface and that of the nonpolarizability of a nonpolarized interface used as a reference oil-water interface from the numerical calculation of dc and ac current vs potential behavior at both interfaces. Theoretical equations of dc and ac currents for simultaneous cation and anion transfer of supporting electrolytes have been derived for the planar stationary interface for reversible and quasi-reversible cases. In the derivation, the migration effect and the coupling of the cation and anion tr

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Fujita, Yuki, Tadashi Ebihara, Naoto Wakatsuki, Yuka Maeda, and Koichi Mizutani. "Acoustic probe for temperature measurement suitable for operation with audio interfaces having random input/output delays." Journal of the Acoustical Society of America 154, no. 4_supplement (2023): A285. http://dx.doi.org/10.1121/10.0023539.

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Measuring temperature distribution is an important technique in the fields of meteorology, agriculture, and architecture. The acoustic probe emits sound waves from a speaker and measures the time it takes for the waves to reach a microphone, enabling the measurement of the average temperature between the speaker and the microphone. Additionally, by placing multiple acoustic probes around the measurement area, it becomes possible to measure the temperature distribution using fewer sensors compared to point-type sensors. However, acoustic probes can have higher costs due to the requirement for e

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Landers, Alan T., David M. Koshy, Soo Hong Lee, et al. "A refraction correction for buried interfaces applied to in situ grazing-incidence X-ray diffraction studies on Pd electrodes." Journal of Synchrotron Radiation 28, no. 3 (2021): 919–23. http://dx.doi.org/10.1107/s1600577521001557.

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In situ characterization of electrochemical systems can provide deep insights into the structure of electrodes under applied potential. Grazing-incidence X-ray diffraction (GIXRD) is a particularly valuable tool owing to its ability to characterize the near-surface structure of electrodes through a layer of electrolyte, which is of paramount importance in surface-mediated processes such as catalysis and adsorption. Corrections for the refraction that occurs as an X-ray passes through an interface have been derived for a vacuum–material interface. In this work, a more general form of the refrac

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Sakhawy, Nagwa R. El, and Tuncer B. Edil. "Behavior of Shaft-Sand Interface from Local Measurements." Transportation Research Record: Journal of the Transportation Research Board 1548, no. 1 (1996): 74–80. http://dx.doi.org/10.1177/0361198196154800111.

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The load-displacement response of axially loaded structural inclusions in soil, which transfer the load to the soil along their shafts, is of growing interest in geotechnical engineering. The load-displacement response of a shaft interface is characterized by nonlinear and inelastic behavior. Surface roughness of the inclusion and stresses and deformation characteristics (stress-strain response, dilation, or contraction) of the soil element surrounding the inclusion are significant aspects of the interface mechanism. Localized shear displacement at the soil-shaft interface necessitates use of

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Randall K. Wood and Eddie C. Burt. "Soil-Tire Interface Stress Measurements." Transactions of the ASAE 30, no. 5 (1987): 1254–58. http://dx.doi.org/10.13031/2013.30554.

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Kalinin, Sergei V., and Dawn A. Bonnell. "Scanning Impedance Microscopy: From Impedance Spectra to Impedance Images." Microscopy Today 10, no. 1 (2002): 22–27. http://dx.doi.org/10.1017/s1551929500050471.

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The properties and performance of electronic devices are crucially dependent on interface-related phenomena. The presence of interfaces can enable electronic device functionality (p-n diodes, solar cells); alternatively, non-functional interfaces can degrade device performance (ohmic vs. non-ohmic contacts). The most versatile tools for semiconductor interface characterization are ac (impedance spectroscopy, C-V) and dc (I-V) transport measurements. However, due to the lack of spatial resolution, these methods often cannot separate the contributions from electroactive interfaces and contacts.

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Wagener, Magnus C., R. H. Zhang, W. Zhao, M. Seacrist, M. Ries, and George A. Rozgonyi. "Electrical Uniformity of Direct Silicon Bonded Wafer Interfaces." Solid State Phenomena 131-133 (October 2007): 321–26. http://dx.doi.org/10.4028/www.scientific.net/ssp.131-133.321.

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This paper describes a series of electrical measurements and sample modifications that enabled the electrical properties of hybrid-orientation direct silicon bonded wafer interfaces to be determined. It is shown that the carrier transport across this near-surface (110)Si/(100)Si boundary is dictated by the defects present at the bond interface. These interface states are believed to pin the Fermi-level, producing a conduction barrier with a thermal activation energy Ea = 0.56eV. The defect band has been identified by deep-level transient spectroscopy and associated with the defect states typic

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Raciti, David, Brian Tackett, Angela Hight Walker, Gery Stafford, and Thomas P. Moffat. "Insights into Electrocatalytic Surface Chemistry Via Operando Spectroscopy, Spectrometry and Stress Measurements." ECS Meeting Abstracts MA2022-02, no. 56 (2022): 2166. http://dx.doi.org/10.1149/ma2022-02562166mtgabs.

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On the verge of harnessing CO2 as a building block for carbon-based fuels, electrocatalysis stands uniquely poised to revolutionize the chemical industry through renewable electrification. For this vision to become reality operando measurement techniques must be applied to study phenomena at the electrode-electrolyte interface. Understanding the dynamic interaction between ionic species in the electrolyte, active sites and intermediates is paramount for the systematic advancement in chemical reactivity, durability, and selectivity required to become commercially relevant. I will demonstrate a

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Hohensee, Gregory T., Mousumi M. Biswas, Ella Pek, et al. "Pump-probe thermoreflectance measurements of critical interfaces for thermal management of HAMR heads." MRS Advances 2, no. 58-59 (2017): 3627–36. http://dx.doi.org/10.1557/adv.2017.503.

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ABSTRACT For heat-assisted magnetic recording (HAMR) heads, a major reliability limiter is the peak near-field transducer (NFT) temperature. Since the NFT is nanoscale, heat sinking is controlled by materials and interfaces within a few 100 nm of the NFT. Heat sinks can be metallic to take advantage of the 10x-100x higher thermal boundary conductance (TBC) of metal/metal interfaces, versus nonmetal interfaces. Oxide formation at these interfaces can greatly decrease the TBC and contribute to NFT failure. Likewise, the thermal resistance of material between the NFT and media recording layer gre

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Alexandris, Stelios, Daniel Ashkenazi, Jan Vermant, Dimitris Vlassopoulos, and Moshe Gottlieb. "Interfacial shear rheology of glassy polymers at liquid interfaces." Journal of Rheology 67, no. 5 (2023): 1047–60. http://dx.doi.org/10.1122/8.0000685.

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When surface-active molecules or particles assemble at fluid–fluid interfaces, these interfaces acquire complex rheological properties that are of importance in processes that involve flow and deformation of interfaces. Although much progress has been made, interfacial rheology measurements and, in particular, the measurement of interfacial rheological properties of polymers at the air-water interface remain challenging. These are due to weak interactions with the water subphase, the polymer backbone conformation, the glass transition of the interfacial layer, and memory effects. In the presen

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Dutta, B., and M. K. Surappa. "Studies on age-hardening characteristics of ceramic particle/matrix interfaces in Al–Cu–SiCp composites using ultra low-load-dynamic microhardness measurements." Journal of Materials Research 12, no. 10 (1997): 2773–78. http://dx.doi.org/10.1557/jmr.1997.0369.

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Ultra low-load-dynamic microhardness testing facilitates the hardness measurements in a very low volume of the material and thus is suited for characterization of the interfaces in MMC's. This paper details the studies on age-hardening behavior of the interfaces in Al–Cu–5SiCp composites characterized using this technique. Results of hardness studies have been further substantiated by TEM observations. In the solution-treated condition, hardness is maximum at the particle/matrix interface and decreases with increasing distance from the interface. This could be attributed to the presence of max

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Yulkifli, Yulkifli, Fitri Afriani, Yohandri Yohandri, and Ramli Ramli. "THE DESIGN OF DISPLAY DIGITAL DATA INTERFACE CLAMP-METER COMPLEMENTED BY SENSOR GMR (GIANT MAGNETORESISTANCE)." Spektra: Jurnal Fisika dan Aplikasinya 5, no. 1 (2020): 53–60. http://dx.doi.org/10.21009/spektra.051.06.

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This article discusses the design of a robust data interface system that displays an electric current using the GMR sensor. Robust measurement of electrical current to detect magnetic fields contained in the current-carrying wire. The magnetic field on the cable should be the input signal to the GMR sensor to be processed by the interface program. This interface used the Arduino IDE program and displayed in the LCD screen. This research is an experimental research laboratory. The results of the data interface can be displayed in the form of comparative measurements with the power of the conven

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Nakayama, Yasuya. "Non-Stick Length of Polymer–Polymer Interfaces under Small-Amplitude Oscillatory Shear Measurement." Polymers 16, no. 1 (2023): 77. http://dx.doi.org/10.3390/polym16010077.

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Interfaces in soft materials often exhibit deviation from non-slip/stick response and play a determining role in the rheological response of the overall system. We discuss detection techniques for the excess interface rheology using small-amplitude oscillatory shear (SAOS) measurements. A stacked bilayer of different polymers is sheared parallel to the interface and the dynamic shear response is measured. Deviation of the bilayer shear modulus from the superposition of the shear moduli of the component layers is analysed. Furthermore, we introduce a frequency-dependent non-stick length based o

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Kuzmych, L. V., D. P. Ornatskyi, and V. P. Kvasnikov. "Simulation of the analogue interface for remote measurements." «System analysis and applied information science», no. 2 (August 28, 2019): 39–47. http://dx.doi.org/10.21122/2309-4923-2019-2-39-47.

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This work is aimed at finding possibilities for increasing the accuracy of measurements and interfering analog interfaces for remote measurements using resistive strain gauges by introducing a new structural scheme, which is shown on the Fig. 1. It shows us the Schematic of the electrical functional analog interface for remote measurement using multiplexer and resistive strain gauges, which contains a measuring chain, a transmitter, the input of which is connected to a DC source through an analog demultiplexer, and the outputs of the measuring chain through the analog multiplexer are connected

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Hatakeyama, Tetsuo, Kazuto Takao, Yoshiyuki Yonezawa, and Hiroshi Yano. "Pragmatic Approach to the Characterization of SiC/SiO₂ Interface Traps near the Conduction Band with Split C-V and Hall Measurements." Materials Science Forum 858 (May 2016): 477–80. http://dx.doi.org/10.4028/www.scientific.net/msf.858.477.

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A simple and practical method of characterizing traps at SiC/SiO2 interfaces close to the bottom of the conduction band by using the split C−V and Hall measurements is proposed. This technique was applied to the characterization of traps at a wet-oxidized SiC/SiO2 interface on C-face and those at an oxynitrided SiC/SiO2 interface on Si-face. It was shown that the density of traps near the conduction band of the oxynitrided SiC/SiO2 interface was more than 10 times larger than that of the wet-oxidized SiC/SiO2 interface.

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Elfring, Gwynn J., L. Gary Leal, and Todd M. Squires. "Surface viscosity and Marangoni stresses at surfactant laden interfaces." Journal of Fluid Mechanics 792 (March 4, 2016): 712–39. http://dx.doi.org/10.1017/jfm.2016.96.

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We calculate here the force on a probe at a viscous, compressible interface, laden with soluble surfactant that equilibrates on a finite time scale. The motion of the probe through the interface drives variations in the surfactant concentration at the interface that in turn leads to a Marangoni flow that contributes to the force on the probe. We demonstrate that the Marangoni force on the probe depends non-trivially on the surface shear and dilatational viscosities of the interface indicating the difficulty in extracting these material properties from force measurements at compressible interfa

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Ivanov, A. V., and S. R. Kopylova. "FEATURES OF THE STUDY OF DETECTION AND MEASUREMENT OF SIDE ELECTROMAGNETIC RADIATION OF BROADBAND SIGNALS ON THE EXAMPLE OF DISPLAYPORT INTERFACE." DYNAMICS OF SYSTEMS, MECHANISMS AND MACHINES 11, no. 4 (2023): 109–14. http://dx.doi.org/10.25206/2310-9793-2023-11-4-109-114.

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The article deals with the technical channel of information leakage due to the side electromagnetic radiation of broadband signals on the example of DisplayPort interface. The peculiarities of detection and measurement of side electromagnetic radiation of broadband signals of modern digital interface - DisplayPort are briefly outlined. The architecture of DisplayPort interface is considered and its peculiarities are revealed. The laboratory stand with the help of which practical research on detection and measurement of side electromagnetic radiation of broadband signals on the example of Displ

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Parnham, A. "Interface pressure measurements during ambulance journeys." Journal of Wound Care 8, no. 6 (1999): 279–82. http://dx.doi.org/10.12968/jowc.1999.8.6.25891.

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Hatakeyama, Tetsuo, T. Shimizu, T. Suzuki, Y. Nakabayashi, Hajime Okumura, and K. Kimoto. "Deep-Level-Transient Spectroscopy Characterization of Mobility-Limiting Traps in SiO₂/SiC Interfaces on C-Face 4H-SiC." Materials Science Forum 740-742 (January 2013): 477–80. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.477.

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Constant-capacitance deep-level-transient spectroscopy (CCDLTS) characterization of traps (or states) in SiO2/SiC interfaces on the C-face was carried out to clarify the cause of low-channel mobility of SiC MOSFETs. CCDLTS measurements showed that the interface-state density (Dit) near the conduction band of SiO2/SiC interfaces fabricated using N2O oxidation was much higher than that of SiO2/SiC interfaces fabricated using wet oxidation. The high density of interface states near the conduction band is likely to be the main cause of the low mobility of MOSFETs fabricated using N2O oxidation.

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Kulhavy, David, I.-Kuai Hung, Daniel Unger, and Yanli Zhang. "Student Led Area Measurement Assessments Using Virtual Globes and Pictometry Web-based Interface within an Undergraduate Spatial Science Curriculum." Journal of Education and Culture Studies 3, no. 1 (2019): 53. http://dx.doi.org/10.22158/jecs.v3n1p53.

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<p><em>The use of Virtual Globes and Pictometry continues to expand and develop in undergraduate spatial science education. Spatial science undergraduates measured the area of 30 rectangles on the earth’s surface and compared them to Pictometry hyperspectral imagery measurements within a web-based interface and the Google Earth interface compared to ArcGIS Explorer, Map Developers and ArcMap using the ArcMap 10.5.2 interface. An analysis of variance of the absolute mean area errors (p-value of 0.009271) concluded the accuracy of the five area measurements were statistically differe

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Hu, X. Jack, Antonio A. Padilla, Jun Xu, Timothy S. Fisher, and Kenneth E. Goodson. "3-Omega Measurements of Vertically Oriented Carbon Nanotubes on Silicon." Journal of Heat Transfer 128, no. 11 (2005): 1109–13. http://dx.doi.org/10.1115/1.2352778.

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An exploratory thermal interface structure, made of vertically oriented carbon nanotubes directly grown on a silicon substrate, has been thermally characterized using a 3-omega method. The effective thermal conductivities of the carbon nanotubes (CNT) sample, including the effects of voids, are found to be 74W∕mK to 83W∕mK in the temperature range of 295K to 323K, one order higher than that of the best thermal greases or phase change materials. This result suggests that the vertically oriented CNTs potentially can be a promising next-generation thermal interface solution. However, fairly large

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Venerus, David C. "A novel and noninvasive approach to study the shear rheology of complex fluid interfaces." Journal of Rheology 67, no. 4 (2023): 923–33. http://dx.doi.org/10.1122/8.0000649.

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Surfactants at gas-liquid and liquid-liquid interfaces have profound effects on interfacial stresses that strongly influence flow in bulk phases in contact with the interface. These effects include changes in interfacial tension and the development of extra stresses that arise when the interface is deformed. Surfactants are important in nature, biological function, and numerous technologies. Understanding interfacial rheology is critical to the development of improved surfactants for these important applications. Here, we propose a novel and noninvasive technique for the investigation of inter

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Su, Liang Yu. "LabVIEW Applications for Fiber-Optic Remote Test and Fiber Sensor Systems." Applied Mechanics and Materials 610 (August 2014): 216–20. http://dx.doi.org/10.4028/www.scientific.net/amm.610.216.

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This paper demonstrates applications of LabVIEW in automatic test measurement of fiber optic system.First,the LabVIEW applications in fiber optic system and the basics of instrument connectivity are presented.Then,the aspects of hardware communication to external instruments through GPIB and serial interfaces are analyzed.Next,self-calibrating automated characterization system for depressed cladding applications is demonstrated utilizing the LabVIEW’s GPIB interface. Results of the manual and automatic measurements and the analysis of the measurement trace obtained from the optical time domain

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Gustavsson, M., Hideaki Nagai, and Takeshi Okutani. "Characterization of Anisotropic and Irregularly-Shaped Materials by High-Sensitive Thermal Conductivity Measurements." Solid State Phenomena 124-126 (June 2007): 1641–44. http://dx.doi.org/10.4028/www.scientific.net/ssp.124-126.1641.

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In modern thermal analysis and design involving thermal transport in solid components it is necessary to apply different modeling of the thermal heat flow in bulk material and across solid surface interfaces either in shape of a layer or a solid-solid interface. Similar differences occur when applying different measurement techniques. Some techniques have been developed specifically for the purpose of performing measurements of bulk properties by removing the influence from thermal contact resistance between the measurement probe and the sample material. Thermal conductivity measurements on me

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Martinez, Alejandro, and Hans Henning Stutz. "Evolution of excess pore water pressure in undrained claystructure interface shear tests." E3S Web of Conferences 544 (2024): 01025. http://dx.doi.org/10.1051/e3sconf/202454401025.

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Recent studies focused on the shear behaviour of clay-structure interfaces have shown the importance of the shearing rate on the strength of these interfaces. In normally-consolidated clays, increasing the shearing rate results in a decrease in the interface strength, while the trend is opposite in heavily overconsolidated clays. While analytical and empirical interpretation methods indicate that the generation of shear-induced excess pore pressures are responsible for theaforementioned trends, experiments with pore water pressure measurements at the clay-structure interface are rare. In this

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Tang, Dajun, Brian Hefner, Kevin Williams, and Eric Thorsos. "Measurements of interface roughness and examination of near bottom interface properties." Journal of the Acoustical Society of America 120, no. 5 (2006): 3144. http://dx.doi.org/10.1121/1.4787786.

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Howes, P. B., K. A. Edwards, J. E. Macdonald, et al. "The Atomic Structure of the Si(111)-Pb Buried Interface Grown on the ${\rm Si}(111)\mbox{-}(\sqrt{3}\times\sqrt{3})\mbox{-}{\rm Pb}$ Reconstruction." Surface Review and Letters 05, no. 01 (1998): 163–66. http://dx.doi.org/10.1142/s0218625x98000311.

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The Si(111)-Pb interface is a prototypical metal-semiconductor interface and has been the subject of a number of experimental studies. The Schottky barrier height is known to depend on the initial reconstruction formed by the first monolayer of Pb atoms and we have previously shown that there are structural differences between the buried interfaces. We present surface X-ray diffraction measurements of the interface grown from the incommensurate [Formula: see text] reconstruction and show that, in contrast to the starting surface, the interface comprises the junction between unreconstructed, bu

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Mchedlidze, Teimuraz, Maximilian Drescher, Elke Erben, and J. Weber. "Capacitance Transient Spectroscopy Measurements on High-k Metal Gate Field Effect Transistors Fabricated Using 28nm Technology Node." Solid State Phenomena 242 (October 2015): 459–65. http://dx.doi.org/10.4028/www.scientific.net/ssp.242.459.

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Fast progress in nanometer-node high-k metal gate (HKMG) technology requires the development of versatile and detailed characterization methods for semiconductor / dielectric / metal stacks and interfaces between them. Complexity of the advanced fabrication processes does not allow preparation of model samples with dimensions used in standard laboratory measurements. In this report we apply capacitance transient spectroscopy measurements for the characterization of HKMG field effect transistors (FET) fabricated in the standard 28 nm node technology. Measurements were performed on n-FET devices

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Carroll, Gerard Michael, Gabriel M. Veith, Maxwell C. Schulze, and Ryan Doeren. "Accelerating Measurement Times by Correlating Electrode/Electrolyte Interface Properties with Cycle and Calendar Lifetimes." ECS Meeting Abstracts MA2024-01, no. 2 (2024): 329. http://dx.doi.org/10.1149/ma2024-012329mtgabs.

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Electrochemical performance measurements on novel battery technologies are slow and require substantial resources. For example, a common metric for assessing the cycle lifetime of a cell is by charging and discharging at a rate of one cycle every six hours (C/3) for 1000 cycles and reporting the remaining capacity after the measurement. At this rate, a single measurement takes eight months to acquire useful data. Even worse, the benchmark for an acceptable shelf-life (calendar life) is to retain 80% of the initial cell capacity through 10 years. As of now, the only reliable method for acquirin

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Hidalgo-López, José A., Óscar Oballe-Peinado, Julián Castellanos-Ramos, and José A. Sánchez-Durán. "Two-Capacitor Direct Interface Circuit for Resistive Sensor Measurements." Sensors 21, no. 4 (2021): 1524. http://dx.doi.org/10.3390/s21041524.

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Direct interface circuits (DICs) avoid the need for signal conditioning circuits and analog-to-digital converters (ADCs) to obtain digital measurements of resistive sensors using only a few passive elements. However, such simple hardware can lead to quantization errors when measuring small resistance values as well as high measurement times and uncertainties for high resistances. Different solutions to some of these problems have been presented in the literature over recent years, although the increased uncertainty in measurements at higher resistance values is a problem that has remained unad

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Hatakeyama, Tetsuo, Hirofumi Matsuhata, T. Suzuki, Takashi Shinohe, and Hajime Okumura. "Microscopic Examination of SiO₂/4H-SiC Interfaces." Materials Science Forum 679-680 (March 2011): 330–33. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.330.

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SiO2/4H-SiC interfaces are examined by high-resolution transmission electron microscopy (HRTEM), high-angle annular dark-field scanning transmission electron microscopy (HAADF-STEM), and spatially resolved electron energy-loss spectroscopy (EELS). HRTEM and HAADF-STEM images of SiO2/4H-SiC interfaces reveal that abrupt interfaces are formed irrespective of the fabrication conditions. Transition regions around the interfaces reported by Zheleva et al. were not observed. Using EELS, profiles of the C/Si and O/Si ratios across an interface were measured. Our measurements did not reveal a C-rich r

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SATHER, A. P., A. K. W. TONG, and D. S. HARBISON. "THE RELATIONSHIP OF LIVE ULTRASONIC PROBES TO CARCASS FAT MEASUREMENTS IN SWINE." Canadian Journal of Animal Science 68, no. 2 (1988): 355–58. http://dx.doi.org/10.4141/cjas88-040.

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Measurements of total fat depth and depth to the interface between the second and third fat layers were made on live pigs just prior to slaughter and on their hot and cold carcasses. The data were analyzed to predict the changes that would take place in these measures of fat depth during slaughter and carcass cooling. A statistical interaction was detected between slaughter weight and the animal/carcass state at the time of measurement for the total fat measurement only. This suggests that measurements taken to the interface of the second and third fat layers will exhibit a more consistent rel

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Lee, Kin Kiong, Gerhard Pensl, Maher Soueidan, and Gabriel Ferro. "Electronic Properties of Thermally Oxidized Single-Domain 3C-SiC/6H-SiC Grown by Vapour-Liquid-Solid Mechanism." Materials Science Forum 556-557 (September 2007): 505–8. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.505.

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This paper studies the electronic properties of MOS capacitors fabricated on double positioning boundary free 3C-SiC/6H-SiC where the 3C-SiC films were grown using the Vapour- Liquid-Solid mechanism. The temperature- and frequency-dependent electrical properties of SiO2/3C-SiC/6H-SiC structures have been studied. Capacitance measurements indicate that the single-domain 3C-SiC film is doped near the surface with an average concentration of 8.3 × 1016 cm-3. The measured interface state density near the conduction band edge of 3C-SiC is below 1011cm-2⋅eV-1 and increases towards mid-gap as obtaine

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Senčič, Jan, Miha Pogačar, Domen Ocepek, and Gregor Čepon. "A Reduction-Based Approach to Improving the Estimation Consistency of Partial Path Contributions in Operational Transfer-Path Analysis." Applied Mechanics 6, no. 1 (2025): 13. https://doi.org/10.3390/applmech6010013.

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Transfer-path analysis (TPA) is a reliable and effective diagnostic tool for determining the dominant vibration transfer paths from the actively vibrating components to the connected passive substructures in complex assemblies. Conventional and component-based TPA approaches achieve this by estimating a set of forces that replicate the operational responses on the passive side of the assembly, requiring separate measurements of the transfer-path admittance and the operational responses, followed by an indirect estimation of the interface forces. This demands significant measurement effort, esp

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Portavoce, Alain, Ivan Blum, Khalid Hoummada, Dominique Mangelinck, Lee Chow, and Jean Bernardini. "Original Methods for Diffusion Measurements in Polycrystalline Thin Films." Defect and Diffusion Forum 322 (March 2012): 129–50. http://dx.doi.org/10.4028/www.scientific.net/ddf.322.129.

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With the development of nanotechnologies, the number of industrial processes dealing with the production of nanostructures or nanoobjects is in constant progress (microelectronics, metallurgy). Thus, knowledge of atom mobility and the understanding of atom redistribution in nanoobjects and during their fabrication have become subjects of increasing importance, since they are key parameters to control nanofabrication. Especially, todays materials can be both composed of nanoobjects as clusters or decorated defects, and contain a large number of interfaces as in nanometer-thick film stacking and

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Armitage, Lucy, Angela Buller, Ginu Rajan, Gangadhara Prusty, Anne Simmons, and Lauren Kark. "Clinical utility of pressure feedback to socket design and fabrication." Prosthetics and Orthotics International 44, no. 1 (2019): 18–26. http://dx.doi.org/10.1177/0309364619868364.

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Background: The clinical utility of measuring pressure at the prosthetic socket-residual limb interface is currently unknown. Objectives: This study aimed to identify whether measuring interface pressure during prosthetic design and fabrication results in closer agreement in pressure measurements between sockets made by different clinicians, and a reduction in pressure over areas of concern. It also investigated whether clinicians value knowing the interface pressure during the fabrication process. Study design: Mixed methods. Methods: Three prosthetists designed a complete prosthetic system f

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Nakanuma, Takato, Yu Iwakata, Arisa Watanabe, et al. "Comprehensive physical and electrical characterizations of NO nitrided SiO₂/4H-SiC(112̄0) interfaces." Japanese Journal of Applied Physics 61, SC (2022): SC1065. http://dx.doi.org/10.35848/1347-4065/ac4685.

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Abstract Nitridation of SiO2/4H-SiC(112̄0) interfaces with post-oxidation annealing in an NO ambient (NO-POA) and its impact on the electrical properties were investigated. Sub-nm-resolution nitrogen depth profiling at the interfaces was conducted by using a scanning X-ray photoelectron spectroscopy microprobe. The results showed that nitrogen atoms were incorporated just at the interface and that interface nitridation proceeded much faster than at SiO2/SiC(0001) interfaces, resulting in a 2.3 times higher nitrogen concentration. Electrical characterizations of metal-oxide-semiconductor capaci

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Labed, V., O. Witschger, M. C. Robe, and B. Sanchez. "222Rn Emission Flux and Soil-Atmosphere Interface: Comparative Analysis of Different Measurement Techniques." Radiation Protection Dosimetry 56, no. 1-4 (1994): 271–73. http://dx.doi.org/10.1093/oxfordjournals.rpd.a082469.

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Abstract Radon emission flux at the ground-atmosphere interface is one of the measurements commonly made for environmental purposes and on prospective mining sites. There are a number of ways of making such measurements. Generally an 'accumulation' technique is used. This method consists in determining the radon activity at a given time, inside a container placed on the ground with one side open, facing downward. The radon activity is determined by sampling the air inside the confinement system with a scintillation flask. The purpose of this work was to simplify this method by using other rado

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Kelly, Maria, Sara T. Hamilton, Paige N. Brimley, Nathan T. Nesbitt, Ah-Hyung Alissa Park, and Wilson A. Smith. "Operando Characterization of CO₂ Reduction Interfaces by Electrochemical Atomic Force Microscopy." ECS Meeting Abstracts MA2024-02, no. 60 (2024): 4079. https://doi.org/10.1149/ma2024-02604079mtgabs.

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The electrode-electrolyte interface is perhaps the most important interface of an electrochemical device. At this interface, the electrochemical reactions of interest occur, and the local microenvironment (e.g. pH, reactant concentrations, water activity) can differ significantly from bulk electrolyte conditions due to double layer formation, migration, mass transport effects, catalyst restructuring, and more. In addition, common electrode materials such as polycrystalline metal foils and nanoparticle catalyst layers are heterogeneous with regions of differing activity, making the interface va

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Głuszko, Grzegorz, Sławomir Szostak, Heinrich Gottlob, Max Lemme, and Lidia Łukasiak. "Characterization of SOI MOSFETs by means of charge-pumping." Journal of Telecommunications and Information Technology, no. 3 (June 25, 2023): 67–72. http://dx.doi.org/10.26636/jtit.2007.3.832.

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This paper presents the results of charge-pumping measurements of SOI MOSFETs. The aim of these measurements is to provide information on the density of interface traps at the front and back Si-SiO2 interface. Three-level charge-pumping is used to obtain energy distribution of interface traps at front-interface

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Weng, Ming Hung, Simon Barker, Rajat Mahapatra, Benjamin J. D. Furnival, Nicolas G. Wright, and Alton B. Horsfall. "Study of the Interface Properties of TiO₂/SiO₂/SiC by Photocapacitance." Materials Science Forum 679-680 (March 2011): 350–53. http://dx.doi.org/10.4028/www.scientific.net/msf.679-680.350.

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We have investigated the annealing of fixed oxide charge and interfacial traps in MISiC strucures by means of the photo capacitance voltage technique at temperatures up to 500°C. Elevated temperature measurements show reduced hysteresis and reduced fixed oxide charge at the interface. The photo capacitance technique shows a real-time measurement at elevated temperatures, in which electrons are populated by photo energy, in a 4H-SiC MIS structure. We also confirm the reduction of fixed oxide charge at the interface by means of high temperature post deposition annealing, which occurs during the

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Yang, Chunyu, Chieh-Tsung Lo, Ashraf F. Bastawros, and Balaji Narasimhan. "Measurements of diffusion thickness at polymer interfaces by nanoindentation: A numerically calibrated experimental approach." Journal of Materials Research 24, no. 3 (2009): 985–92. http://dx.doi.org/10.1557/jmr.2009.0105.

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The interfacial fracture toughness and the adhesion strength of two dissimilar materials are governed by the diffusion interfacial thickness and its mechanical characteristics. A new testing methodology is implemented here to estimate the actual interfacial thickness from a series of nanoindentations across the interface, under the same applied load, with tip radius and indentation depth many times larger than the interface thickness. The bimaterial system used is a semicrystalline polymer interface of isotactic polypropylene and linear low-density polyethylene. The laminate is prepared under

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Auquier, Nicolas, Kerem Ege, and Emmanuel Gourdon. "Imperfect interfaces characterization in a multilayered structure by means of an equivalent dynamic model." Acta Acustica 8 (2024): 78. https://doi.org/10.1051/aacus/2024079.

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The research presented in this paper aims to demonstrate how imperfect interfaces influence the behavior of a multilayered structure. To achieve this, a dynamic equivalent model for multilayered panels is used, enabling the characterization of these interfaces using experimental data. This model, known as the Layer Wise (LW) model, incorporates imperfections in the interfaces through sliding displacement. To effectively validate the model against experimental measurements, an equivalence with a thin beam is established. Then the experimental methodology used for characterization is outlined, i

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Sarkar, Piyali, A. Biswas, Sanjay Rai, et al. "Impact of B₄C buffer layer on interface diffusion in Cr/Sc multilayers: combined study by X-ray reflectivity, scattering and fluorescence." Physica Scripta, April 29, 2024. http://dx.doi.org/10.1088/1402-4896/ad451f.

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Abstract In thin film multilayer based optical components of X-ray imaging system, diffusion of one material into the other degrades the reflectivity of the mirrors severely. Along with this thermodynamically driven diffusion, there are also growth generated interface roughness of different special frequencies and microstructures which can increase the diffused scattering from the multilayer and reduce the resolution of an image. Generally grazing incidence X-ray reflectivity in specular geometry (specular GIXR) and diffused X-ray scattering measurement in rocking scan geometry yield informati

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