Relevant bibliographies by topics / Interface Si/SiO2

Contents

  1. Journal articles
  2. Dissertations / Theses
  3. Books
  4. Book chapters
  5. Conference papers
  6. Reports

Academic literature on the topic 'Interface Si/SiO2'

Author: Grafiati
Published: 4 June 2021
Last updated: 3 February 2022

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Journal articles on the topic "Interface Si/SiO2"

1

Duscher, G., F. Banhart, H. Müllejans, S. J. Pennycook, and M. Rühle. "Atomic Structure of Si-SiO2 Interface." Microscopy and Microanalysis 3, S2 (1997): 459–60. http://dx.doi.org/10.1017/s1431927600009181.

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Investigations of the atomic structure of Si-SiO2 interfaces have mostly been performed with high resolution transmission electron microscopy. However, the interpretation of the phase contrast in the amorphous phase at the interface is not unique. While Ourmazd et al. concluded on a crystalline phase at the Si-SiO2 interface, Akatsu and Ohdomari attributed the same contrast to an interface roughness parallel to the incident electrons.We investigated the Si-SiO2 interface by studying the ELNES of the O-K edge with the spatial difference technique with a dedicated STEM with l00kV (VG HB501 UX).
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Pantelides, Sokrates T., Sanwu Wang, A. Franceschetti, et al. "Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances." Materials Science Forum 527-529 (October 2006): 935–48. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.935.

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Silicon has been the semiconductor of choice for microelectronics largely because of the unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature and/or high-power applications, however, one needs a semiconductor with a wider energy gap and higher thermal conductivity. Silicon carbide has the right properties and the same native oxide as Si. However, in the late 1990’s it was found that the SiC/SiO2 interface had high interface trap densities, resulting in poor electron mobilities. Annealing in hydrogen, which is key to the quality of Si/SiO2 interfaces, pro
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Downey, S. W., and A. B. Emerson. "Sputtering effects in Si, SiO2 and the Si/SiO2 interface." Surface and Interface Analysis 20, no. 1 (1993): 53–59. http://dx.doi.org/10.1002/sia.740200109.

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Ourmazd, A., P. H. Fuoss, J. Bevk, and J. F. Morar. "The Si(001)/SiO2 interface." Applied Surface Science 41-42 (January 1990): 365–71. http://dx.doi.org/10.1016/0169-4332(89)90086-x.

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Gavartin, J. L., and A. L. Shluger. "Modeling HfO2/SiO2/Si interface." Microelectronic Engineering 84, no. 9-10 (2007): 2412–15. http://dx.doi.org/10.1016/j.mee.2007.04.102.

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Lopes, M. C. V., S. G. dos Santos Fo., C. M. Hasenack, and V. Baranauskas. "Si ‐ SiO2 Electronic Interface Roughness as a Consequence of Si ‐ SiO2 Topographic Interface Roughness." Journal of The Electrochemical Society 143, no. 3 (1996): 1021–25. http://dx.doi.org/10.1149/1.1836575.

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Guy, Owen J., T. E. Jenkins, Michal Lodzinski, et al. "Ellipsometric and MEIS Studies of 4H-SiC/Si/SiO2 and 4H-SiC/SiO2 Interfaces for MOS Devices." Materials Science Forum 556-557 (September 2007): 509–12. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.509.

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The high density of interface states of thermally grown oxides on silicon carbide has prompted research into alternative oxidation methods and post oxidation anneals. One such alternative is oxidation of a deposited sacrificial silicon layer. A recent variation of this technique is a partial oxidation of the deposited Si layer, so that a thin Si layer remains between the SiO2 and SiC layers. If the SiO2/Si interface has lower interface state densities than the SiO2/SiC interface, the SiO2/Si/SiC hetero-structure could yield improved channel mobilities in MOS devices. Moreover, by correct optim
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Mueller, H. H., and M. Schulz. "Individual interface traps at the Si-SiO2 interface." Journal of Materials Science: Materials in Electronics 5, no. 6 (1994): 329–38. http://dx.doi.org/10.1007/bf00215568.

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Kokonou, M., and A. G. Nassiopoulou. "Nanostructuring Si surface and Si/SiO2 interface using porous-alumina-on-Si template technology. Electrical characterization of Si/SiO2 interface." Physica E: Low-dimensional Systems and Nanostructures 38, no. 1-2 (2007): 1–5. http://dx.doi.org/10.1016/j.physe.2006.12.008.

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Rahmoune, F., and D. Bauza. "Si–SiO2 interface trap capture properties." Microelectronic Engineering 59, no. 1-4 (2001): 115–18. http://dx.doi.org/10.1016/s0167-9317(01)00681-5.

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Dissertations / Theses on the topic "Interface Si/SiO2"

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洪國光 and Kwok-kwong Hung. "Electrical characterization of Si-SiO2 interface for thin oxides." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1987. http://hub.hku.hk/bib/B31230866.

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Hung, Kwok-kwong. "Electrical characterization of Si-SiO2 interface for thin oxides /." [Hong Kong : University of Hong Kong], 1987. http://sunzi.lib.hku.hk/hkuto/record.jsp?B12232580.

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Ando, T., T. Takumi, and K. Sato. "Degradation of Mechanical Strength at Si/SiO2 Interface on SOI Wafers under Cyclic Loading." IEEE, 2009. http://hdl.handle.net/2237/13916.

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Röntzsch, Lars. "Self-Organization of Nanocluster delta-Layers at Ion-Beam-Mixied Si-SiO2 Interfaces." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29001.

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This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of delta-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of "bottom-up" structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15nm thin SiO2 layer, which is enclosed by a 50nm poly-Si capping layer and the Si substrate, is irradiated with Si+ ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degr
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Röntzsch, Lars. "Self-Organization of Nanocluster delta-Layers at Ion-Beam-Mixied Si-SiO2 Interfaces." Forschungszentrum Rossendorf, 2003. https://hzdr.qucosa.de/id/qucosa%3A21727.

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This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of delta-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of "bottom-up" structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15nm thin SiO2 layer, which is enclosed by a 50nm poly-Si capping layer and the Si substrate, is irradiated with Si+ ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degr
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Nyamuda, Gibson Peter. "Optical second harmonic generation and pump-probe reflectivity measurements from Si/SiO2 interfaces." Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/5317.

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Thesis (PhD (Physics))--University of Stellenbosch, 2010.<br>ENGLISH ABSTRACT: Silicon/silicon dioxide (Si/SiO2) interface is widely used in microelectronics as the gate between the drain and source of most metal oxide semiconductor field effect transistors (MOSFETs). The functionality, reliability and electrical properties of such transistors are strongly dependent on the quality of the Si/SiO2 structure forming the gate. Characterization of the Si/SiO2 interface is important in understanding device degradation therefore the Si/SiO2 interface is a subject of intensive investigation. Rese
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Cai, Wei. "Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/Oxide/Si, High-k Oxide/Si, and “End-on” Metal Contacts to Vertical Si Nanowires." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1269521615.

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Fernandez, Thomas. "Contribution à l'évaluation de la technique de génération d'harmonique par faisceau laser pour la mesure des champs électriques dans les circuits intégrés (EFISHG)." Thesis, Bordeaux 1, 2009. http://www.theses.fr/2009BOR13846/document.

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Ce travail contribue à l’évaluation de la technique de génération de seconde harmonique induite par un champ électrique quasi statique, ou technique EFISHG, appliquée au domaine de la microélectronique. Une description du principe de la technique EFISHG, basé sur l’optique non linéaire, permet d’appréhender l’origine physique de cette méthode. Un état de l’art a permis d’identifier deux champs d’applications liés à la microélectronique : l’analyse de défaillance, via la mesure en temps de réelle des variations de champs électriques internes dans les circuits intégrés, et la fiabilité par l’étu
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Sanchez, Marcela Beltran. "Models of defects near Si/SiO←2 interfaces." Thesis, University of Oxford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.303579.

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Bull, Michael. "Models of electronic defects at the Si-SiO←2 interface." Thesis, University of Oxford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.237868.

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Books on the topic "Interface Si/SiO2"

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Helms, C. Robert, and Bruce E. Deal, eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5.

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Helms, C. Robert, and Bruce E. Deal, eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7.

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Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (1st 1988 Atlanta, Ga.). The physics and chemistry of SiO₂ and the Si-SiO₂ interface. Plenum Press, 1988.

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Angeles, CA) International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (5th 2005 Los. The physics and chemistry of SiO₂ and the Si-SiO₂ interface--5. Electrochemical Society, 2005.

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International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (3rd 1996 Los Angeles, Calif.). The physics and chemistry of SiO₂ and the Si-SiO₂ interface-3, 1996: Proceedings of the Third International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface. Edited by Massoud Hisham Z, Poindexter Edward H, and Helms C. Robert. Electrochemical Society, 1996.

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International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (4th 2000 Toronto, Ont.). The physics and chemistry of SiO₂ and the Si-SiO₂ interface--4, 2000: Proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface, Toronto, Canada, May 15-18, 2000. Edited by Massoud Hisham Z, Electrochemical Society Electronics Division, and Electrochemical Society. Dielectric Science and Technology Division. Electrochemical Society, 2000.

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(Editor), B. E. Deal, and C. R. Helms (Editor), eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, 1989.

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Deal, B. E., and C. R. Helms. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, 2013.

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(Editor), B. E. Deal, and C. R. Helms (Editor), eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, 1993.

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Deal, B. E., and C. R. Helms. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, 2013.

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Book chapters on the topic "Interface Si/SiO2"

1

Schulz, M. "Characterization of the SiO2-Si Interface." In Semiconductor Silicon. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_17.

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Himpsel, F. J., F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger. "Microscopic Structure Of The SiO2/Si Interface." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_24.

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Raider, S. I. "The Role of SiO in Si Oxidation at a Si-SiO2 Interface." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_4.

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Halbritter, J. "ARXPS Analysis of Si-SiO2-Interfaces." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_25.

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Jain, Sanjay. "The Neutral Level of Si-SO2 Interface States." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_40.

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Hahn, P. O., M. Grundner, A. Schnegg, and H. Jacob. "The Si-SiO2 Interface Roughness: Causes and Effects." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_44.

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Himpsel, F. J., D. A. Lapiano-Smith, J. F. Morar, and J. Bevk. "Local Bonding at SiO2/Si Interfaces." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7_25.

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Ma, T. P., Yasushiro Nishioka, and E. F. da Silva. "Defect Transformation Process at SiO2/Si Interfaces." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_42.

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Hecht, M. H., P. J. Grunthaner, and F. J. Grunthaner. "New Results on the SiO2/Si Interface." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_47.

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Hattori, Takeo, Hiroaki Yamagishi, Noboru Koike, Keitaro Imai, and Kikuo Yamabe. "Dependence of SiO2/Si Interface Structures on Oxidation Process." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_26.

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Conference papers on the topic "Interface Si/SiO2"

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ONO, Yukinori, Michiharu TABE, and Yutaka SAKAKIBARA. "Fluorine Segregation at SiO2/Si Interface." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.s-b-4.

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Plucinski, Kazimierz J. "Structure of the Si-SiO2 interface." In International Conference on Solid State Crystals '98, edited by Antoni Rogalski and Jaroslaw Rutkowski. SPIE, 1999. http://dx.doi.org/10.1117/12.344732.

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Kirichenko, Taras, Decai Yu, Gyenong Hwang, and Sanjay Banerjee. "Vacancy At Si-SiO2 Interface: Ab-Initio Study." In 2006 International Conference on Simulation of Semiconductor Processes and Devices. IEEE, 2006. http://dx.doi.org/10.1109/sispad.2006.282859.

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TAMURA, Yoshinari, Kazuaki OHISHI, Hiroshi NOHIRA, and Takeo HATTORI. "Initial Stage of SiO2/Si Interface Formation on Si(111) Surface." In 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.pa1-2.

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Li, Xiuyan, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi. "Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction." In 2014 IEEE International Electron Devices Meeting (IEDM). IEEE, 2014. http://dx.doi.org/10.1109/iedm.2014.7047094.

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Ushio, Jiro, Keiko Kushida-Abdelghafar, and Takuya Maruizumi. "Interface Structures Generated by Negative-Bias Temperature Instability in Si/SiO2 and Si/SiOxNy Interfaces." In 2001 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2001. http://dx.doi.org/10.7567/ssdm.2001.a-3-2.

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Rong, Li-mei, Bo Liu, Zhi-jun Meng, Kui Liu, Qi Yu, and Yang Liu. "Experimental and computational studies on the refractive index and interface state for nano interface of SiO2/Si and Si3N4/SiO2/Si." In 2016 IEEE International Nanoelectronics Conference (INEC). IEEE, 2016. http://dx.doi.org/10.1109/inec.2016.7589274.

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Kobayashi, Hikaru, Emi Kanazaki, Akira Asano, Kenji Yoneda, Yoshihiro Todokoro, and Mikihiko Nishitani. "Crown-Ether Cyanide Treatment to Eliminate Interface States at Si/SiO2 Interfaces." In 1999 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1999. http://dx.doi.org/10.7567/ssdm.1999.b-7-4.

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YAMAMOTO, Hideaki, Sinya IWASAKI, Katsuhide OKUMURA, Takeshi KANASHIMA, Masanori OKUYAMA, and Yoshihiro HAMAKAWA. "Characterization of Charged Traps near Si-SiO2 Interface in Photo-CVD SiO2 Film." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.pc-5-1.

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Mizushima, I., H. Kamiya, N. Arai, et al. "Diffusion of Carbon in SiO2 Films and Its Segregation at Si/SiO2 Interface." In 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.b-4-3.

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Reports on the topic "Interface Si/SiO2"

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Yakovlev, V. A., and E. A. Irene. An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si-SiO2. Defense Technical Information Center, 1991. http://dx.doi.org/10.21236/ada242867.

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Vitkavage, Susan C., Eugene A. Irene, and Hisham Z. Massoud. An Investigation of Si-SiO2 Interface Charges in Thermally Oxidized (100), (110), (111), (511) Silicon. Defense Technical Information Center, 1990. http://dx.doi.org/10.21236/ada231244.

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Liu, Q., and E. A. Irene. Si/SiO2 Interfere Studies by Immersion Ellipsometry. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada265151.

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Chizmeshya, A., A. Demkov, T. Lenosky, and O. Sankey. Energetics of crystalline silicon dioxide-silicon (SiO2/Si) interfaces. Office of Scientific and Technical Information (OSTI), 1999. http://dx.doi.org/10.2172/13850.

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Duscher, G., S. J. Pennycook, H. J. Gao, N. D. Browning, and R. Singh. Structure, composition, and strain profiling of Si/SiO{sub 2} interfaces. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/672106.

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Poler, J. C., K. K. McKay, and E. A. Irene. Characterization of the Si/SiO2 Interfere Morphology from Quantum Oscillations in Fowler-Nordheim Tunneling Currents. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada265149.

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Devine, R. A. B., C. Mourrain, M. J. Bouzid, W. L. Warren, and K. Vanheusden. Electron induced depassivation of H and D terminated Si/SiO{sub 2} interfaces. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/432994.

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