Academic literature on the topic 'Interface Si/SiO2'
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Journal articles on the topic "Interface Si/SiO2"
Duscher, G., F. Banhart, H. Müllejans, S. J. Pennycook, and M. Rühle. "Atomic Structure of Si-SiO2 Interface." Microscopy and Microanalysis 3, S2 (1997): 459–60. http://dx.doi.org/10.1017/s1431927600009181.
Full textPantelides, Sokrates T., Sanwu Wang, A. Franceschetti, et al. "Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances." Materials Science Forum 527-529 (October 2006): 935–48. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.935.
Full textDowney, S. W., and A. B. Emerson. "Sputtering effects in Si, SiO2 and the Si/SiO2 interface." Surface and Interface Analysis 20, no. 1 (1993): 53–59. http://dx.doi.org/10.1002/sia.740200109.
Full textOurmazd, A., P. H. Fuoss, J. Bevk, and J. F. Morar. "The Si(001)/SiO2 interface." Applied Surface Science 41-42 (January 1990): 365–71. http://dx.doi.org/10.1016/0169-4332(89)90086-x.
Full textGavartin, J. L., and A. L. Shluger. "Modeling HfO2/SiO2/Si interface." Microelectronic Engineering 84, no. 9-10 (2007): 2412–15. http://dx.doi.org/10.1016/j.mee.2007.04.102.
Full textLopes, M. C. V., S. G. dos Santos Fo., C. M. Hasenack, and V. Baranauskas. "Si ‐ SiO2 Electronic Interface Roughness as a Consequence of Si ‐ SiO2 Topographic Interface Roughness." Journal of The Electrochemical Society 143, no. 3 (1996): 1021–25. http://dx.doi.org/10.1149/1.1836575.
Full textGuy, Owen J., T. E. Jenkins, Michal Lodzinski, et al. "Ellipsometric and MEIS Studies of 4H-SiC/Si/SiO2 and 4H-SiC/SiO2 Interfaces for MOS Devices." Materials Science Forum 556-557 (September 2007): 509–12. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.509.
Full textMueller, H. H., and M. Schulz. "Individual interface traps at the Si-SiO2 interface." Journal of Materials Science: Materials in Electronics 5, no. 6 (1994): 329–38. http://dx.doi.org/10.1007/bf00215568.
Full textKokonou, M., and A. G. Nassiopoulou. "Nanostructuring Si surface and Si/SiO2 interface using porous-alumina-on-Si template technology. Electrical characterization of Si/SiO2 interface." Physica E: Low-dimensional Systems and Nanostructures 38, no. 1-2 (2007): 1–5. http://dx.doi.org/10.1016/j.physe.2006.12.008.
Full textRahmoune, F., and D. Bauza. "Si–SiO2 interface trap capture properties." Microelectronic Engineering 59, no. 1-4 (2001): 115–18. http://dx.doi.org/10.1016/s0167-9317(01)00681-5.
Full textDissertations / Theses on the topic "Interface Si/SiO2"
洪國光 and Kwok-kwong Hung. "Electrical characterization of Si-SiO2 interface for thin oxides." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1987. http://hub.hku.hk/bib/B31230866.
Full textHung, Kwok-kwong. "Electrical characterization of Si-SiO2 interface for thin oxides /." [Hong Kong : University of Hong Kong], 1987. http://sunzi.lib.hku.hk/hkuto/record.jsp?B12232580.
Full textAndo, T., T. Takumi, and K. Sato. "Degradation of Mechanical Strength at Si/SiO2 Interface on SOI Wafers under Cyclic Loading." IEEE, 2009. http://hdl.handle.net/2237/13916.
Full textRöntzsch, Lars. "Self-Organization of Nanocluster delta-Layers at Ion-Beam-Mixied Si-SiO2 Interfaces." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29001.
Full textRöntzsch, Lars. "Self-Organization of Nanocluster delta-Layers at Ion-Beam-Mixied Si-SiO2 Interfaces." Forschungszentrum Rossendorf, 2003. https://hzdr.qucosa.de/id/qucosa%3A21727.
Full textNyamuda, Gibson Peter. "Optical second harmonic generation and pump-probe reflectivity measurements from Si/SiO2 interfaces." Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/5317.
Full textCai, Wei. "Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/Oxide/Si, High-k Oxide/Si, and “End-on” Metal Contacts to Vertical Si Nanowires." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1269521615.
Full textFernandez, Thomas. "Contribution à l'évaluation de la technique de génération d'harmonique par faisceau laser pour la mesure des champs électriques dans les circuits intégrés (EFISHG)." Thesis, Bordeaux 1, 2009. http://www.theses.fr/2009BOR13846/document.
Full textSanchez, Marcela Beltran. "Models of defects near Si/SiOâ†2 interfaces." Thesis, University of Oxford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.303579.
Full textBull, Michael. "Models of electronic defects at the Si-SiOâ†2 interface." Thesis, University of Oxford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.237868.
Full textBooks on the topic "Interface Si/SiO2"
Helms, C. Robert, and Bruce E. Deal, eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5.
Full textHelms, C. Robert, and Bruce E. Deal, eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7.
Full textSymposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (1st 1988 Atlanta, Ga.). The physics and chemistry of SiO₂ and the Si-SiO₂ interface. Plenum Press, 1988.
Find full textAngeles, CA) International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (5th 2005 Los. The physics and chemistry of SiO₂ and the Si-SiO₂ interface--5. Electrochemical Society, 2005.
Find full textInternational Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (3rd 1996 Los Angeles, Calif.). The physics and chemistry of SiO₂ and the Si-SiO₂ interface-3, 1996: Proceedings of the Third International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface. Edited by Massoud Hisham Z, Poindexter Edward H, and Helms C. Robert. Electrochemical Society, 1996.
Find full textInternational Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (4th 2000 Toronto, Ont.). The physics and chemistry of SiO₂ and the Si-SiO₂ interface--4, 2000: Proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface, Toronto, Canada, May 15-18, 2000. Edited by Massoud Hisham Z, Electrochemical Society Electronics Division, and Electrochemical Society. Dielectric Science and Technology Division. Electrochemical Society, 2000.
Find full text(Editor), B. E. Deal, and C. R. Helms (Editor), eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, 1989.
Find full textDeal, B. E., and C. R. Helms. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, 2013.
Find full text(Editor), B. E. Deal, and C. R. Helms (Editor), eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, 1993.
Find full textDeal, B. E., and C. R. Helms. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, 2013.
Find full textBook chapters on the topic "Interface Si/SiO2"
Schulz, M. "Characterization of the SiO2-Si Interface." In Semiconductor Silicon. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_17.
Full textHimpsel, F. J., F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger. "Microscopic Structure Of The SiO2/Si Interface." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_24.
Full textRaider, S. I. "The Role of SiO in Si Oxidation at a Si-SiO2 Interface." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_4.
Full textHalbritter, J. "ARXPS Analysis of Si-SiO2-Interfaces." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_25.
Full textJain, Sanjay. "The Neutral Level of Si-SO2 Interface States." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_40.
Full textHahn, P. O., M. Grundner, A. Schnegg, and H. Jacob. "The Si-SiO2 Interface Roughness: Causes and Effects." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_44.
Full textHimpsel, F. J., D. A. Lapiano-Smith, J. F. Morar, and J. Bevk. "Local Bonding at SiO2/Si Interfaces." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7_25.
Full textMa, T. P., Yasushiro Nishioka, and E. F. da Silva. "Defect Transformation Process at SiO2/Si Interfaces." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_42.
Full textHecht, M. H., P. J. Grunthaner, and F. J. Grunthaner. "New Results on the SiO2/Si Interface." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_47.
Full textHattori, Takeo, Hiroaki Yamagishi, Noboru Koike, Keitaro Imai, and Kikuo Yamabe. "Dependence of SiO2/Si Interface Structures on Oxidation Process." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_26.
Full textConference papers on the topic "Interface Si/SiO2"
ONO, Yukinori, Michiharu TABE, and Yutaka SAKAKIBARA. "Fluorine Segregation at SiO2/Si Interface." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.s-b-4.
Full textPlucinski, Kazimierz J. "Structure of the Si-SiO2 interface." In International Conference on Solid State Crystals '98, edited by Antoni Rogalski and Jaroslaw Rutkowski. SPIE, 1999. http://dx.doi.org/10.1117/12.344732.
Full textKirichenko, Taras, Decai Yu, Gyenong Hwang, and Sanjay Banerjee. "Vacancy At Si-SiO2 Interface: Ab-Initio Study." In 2006 International Conference on Simulation of Semiconductor Processes and Devices. IEEE, 2006. http://dx.doi.org/10.1109/sispad.2006.282859.
Full textTAMURA, Yoshinari, Kazuaki OHISHI, Hiroshi NOHIRA, and Takeo HATTORI. "Initial Stage of SiO2/Si Interface Formation on Si(111) Surface." In 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.pa1-2.
Full textLi, Xiuyan, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi. "Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction." In 2014 IEEE International Electron Devices Meeting (IEDM). IEEE, 2014. http://dx.doi.org/10.1109/iedm.2014.7047094.
Full textUshio, Jiro, Keiko Kushida-Abdelghafar, and Takuya Maruizumi. "Interface Structures Generated by Negative-Bias Temperature Instability in Si/SiO2 and Si/SiOxNy Interfaces." In 2001 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2001. http://dx.doi.org/10.7567/ssdm.2001.a-3-2.
Full textRong, Li-mei, Bo Liu, Zhi-jun Meng, Kui Liu, Qi Yu, and Yang Liu. "Experimental and computational studies on the refractive index and interface state for nano interface of SiO2/Si and Si3N4/SiO2/Si." In 2016 IEEE International Nanoelectronics Conference (INEC). IEEE, 2016. http://dx.doi.org/10.1109/inec.2016.7589274.
Full textKobayashi, Hikaru, Emi Kanazaki, Akira Asano, Kenji Yoneda, Yoshihiro Todokoro, and Mikihiko Nishitani. "Crown-Ether Cyanide Treatment to Eliminate Interface States at Si/SiO2 Interfaces." In 1999 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1999. http://dx.doi.org/10.7567/ssdm.1999.b-7-4.
Full textYAMAMOTO, Hideaki, Sinya IWASAKI, Katsuhide OKUMURA, Takeshi KANASHIMA, Masanori OKUYAMA, and Yoshihiro HAMAKAWA. "Characterization of Charged Traps near Si-SiO2 Interface in Photo-CVD SiO2 Film." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.pc-5-1.
Full textMizushima, I., H. Kamiya, N. Arai, et al. "Diffusion of Carbon in SiO2 Films and Its Segregation at Si/SiO2 Interface." In 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.b-4-3.
Full textReports on the topic "Interface Si/SiO2"
Yakovlev, V. A., and E. A. Irene. An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si-SiO2. Defense Technical Information Center, 1991. http://dx.doi.org/10.21236/ada242867.
Full textVitkavage, Susan C., Eugene A. Irene, and Hisham Z. Massoud. An Investigation of Si-SiO2 Interface Charges in Thermally Oxidized (100), (110), (111), (511) Silicon. Defense Technical Information Center, 1990. http://dx.doi.org/10.21236/ada231244.
Full textLiu, Q., and E. A. Irene. Si/SiO2 Interfere Studies by Immersion Ellipsometry. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada265151.
Full textChizmeshya, A., A. Demkov, T. Lenosky, and O. Sankey. Energetics of crystalline silicon dioxide-silicon (SiO2/Si) interfaces. Office of Scientific and Technical Information (OSTI), 1999. http://dx.doi.org/10.2172/13850.
Full textDuscher, G., S. J. Pennycook, H. J. Gao, N. D. Browning, and R. Singh. Structure, composition, and strain profiling of Si/SiO{sub 2} interfaces. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/672106.
Full textPoler, J. C., K. K. McKay, and E. A. Irene. Characterization of the Si/SiO2 Interfere Morphology from Quantum Oscillations in Fowler-Nordheim Tunneling Currents. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada265149.
Full textDevine, R. A. B., C. Mourrain, M. J. Bouzid, W. L. Warren, and K. Vanheusden. Electron induced depassivation of H and D terminated Si/SiO{sub 2} interfaces. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/432994.
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