Academic literature on the topic 'Interface Si/SiO2'

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the lists of relevant articles, books, theses, conference reports, and other scholarly sources on the topic 'Interface Si/SiO2.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Journal articles on the topic "Interface Si/SiO2"

1

Duscher, G., F. Banhart, H. Müllejans, S. J. Pennycook, and M. Rühle. "Atomic Structure of Si-SiO2 Interface." Microscopy and Microanalysis 3, S2 (1997): 459–60. http://dx.doi.org/10.1017/s1431927600009181.

Full text
Abstract:
Investigations of the atomic structure of Si-SiO2 interfaces have mostly been performed with high resolution transmission electron microscopy. However, the interpretation of the phase contrast in the amorphous phase at the interface is not unique. While Ourmazd et al. concluded on a crystalline phase at the Si-SiO2 interface, Akatsu and Ohdomari attributed the same contrast to an interface roughness parallel to the incident electrons.We investigated the Si-SiO2 interface by studying the ELNES of the O-K edge with the spatial difference technique with a dedicated STEM with l00kV (VG HB501 UX).
APA, Harvard, Vancouver, ISO, and other styles
2

Pantelides, Sokrates T., Sanwu Wang, A. Franceschetti, et al. "Si/SiO2 and SiC/SiO2 Interfaces for MOSFETs – Challenges and Advances." Materials Science Forum 527-529 (October 2006): 935–48. http://dx.doi.org/10.4028/www.scientific.net/msf.527-529.935.

Full text
Abstract:
Silicon has been the semiconductor of choice for microelectronics largely because of the unique properties of its native oxide (SiO2) and the Si/SiO2 interface. For high-temperature and/or high-power applications, however, one needs a semiconductor with a wider energy gap and higher thermal conductivity. Silicon carbide has the right properties and the same native oxide as Si. However, in the late 1990’s it was found that the SiC/SiO2 interface had high interface trap densities, resulting in poor electron mobilities. Annealing in hydrogen, which is key to the quality of Si/SiO2 interfaces, pro
APA, Harvard, Vancouver, ISO, and other styles
3

Downey, S. W., and A. B. Emerson. "Sputtering effects in Si, SiO2 and the Si/SiO2 interface." Surface and Interface Analysis 20, no. 1 (1993): 53–59. http://dx.doi.org/10.1002/sia.740200109.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Ourmazd, A., P. H. Fuoss, J. Bevk, and J. F. Morar. "The Si(001)/SiO2 interface." Applied Surface Science 41-42 (January 1990): 365–71. http://dx.doi.org/10.1016/0169-4332(89)90086-x.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Gavartin, J. L., and A. L. Shluger. "Modeling HfO2/SiO2/Si interface." Microelectronic Engineering 84, no. 9-10 (2007): 2412–15. http://dx.doi.org/10.1016/j.mee.2007.04.102.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Lopes, M. C. V., S. G. dos Santos Fo., C. M. Hasenack, and V. Baranauskas. "Si ‐ SiO2 Electronic Interface Roughness as a Consequence of Si ‐ SiO2 Topographic Interface Roughness." Journal of The Electrochemical Society 143, no. 3 (1996): 1021–25. http://dx.doi.org/10.1149/1.1836575.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Guy, Owen J., T. E. Jenkins, Michal Lodzinski, et al. "Ellipsometric and MEIS Studies of 4H-SiC/Si/SiO2 and 4H-SiC/SiO2 Interfaces for MOS Devices." Materials Science Forum 556-557 (September 2007): 509–12. http://dx.doi.org/10.4028/www.scientific.net/msf.556-557.509.

Full text
Abstract:
The high density of interface states of thermally grown oxides on silicon carbide has prompted research into alternative oxidation methods and post oxidation anneals. One such alternative is oxidation of a deposited sacrificial silicon layer. A recent variation of this technique is a partial oxidation of the deposited Si layer, so that a thin Si layer remains between the SiO2 and SiC layers. If the SiO2/Si interface has lower interface state densities than the SiO2/SiC interface, the SiO2/Si/SiC hetero-structure could yield improved channel mobilities in MOS devices. Moreover, by correct optim
APA, Harvard, Vancouver, ISO, and other styles
8

Mueller, H. H., and M. Schulz. "Individual interface traps at the Si-SiO2 interface." Journal of Materials Science: Materials in Electronics 5, no. 6 (1994): 329–38. http://dx.doi.org/10.1007/bf00215568.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Kokonou, M., and A. G. Nassiopoulou. "Nanostructuring Si surface and Si/SiO2 interface using porous-alumina-on-Si template technology. Electrical characterization of Si/SiO2 interface." Physica E: Low-dimensional Systems and Nanostructures 38, no. 1-2 (2007): 1–5. http://dx.doi.org/10.1016/j.physe.2006.12.008.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Rahmoune, F., and D. Bauza. "Si–SiO2 interface trap capture properties." Microelectronic Engineering 59, no. 1-4 (2001): 115–18. http://dx.doi.org/10.1016/s0167-9317(01)00681-5.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Dissertations / Theses on the topic "Interface Si/SiO2"

1

洪國光 and Kwok-kwong Hung. "Electrical characterization of Si-SiO2 interface for thin oxides." Thesis, The University of Hong Kong (Pokfulam, Hong Kong), 1987. http://hub.hku.hk/bib/B31230866.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Hung, Kwok-kwong. "Electrical characterization of Si-SiO2 interface for thin oxides /." [Hong Kong : University of Hong Kong], 1987. http://sunzi.lib.hku.hk/hkuto/record.jsp?B12232580.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Ando, T., T. Takumi, and K. Sato. "Degradation of Mechanical Strength at Si/SiO2 Interface on SOI Wafers under Cyclic Loading." IEEE, 2009. http://hdl.handle.net/2237/13916.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Röntzsch, Lars. "Self-Organization of Nanocluster delta-Layers at Ion-Beam-Mixied Si-SiO2 Interfaces." Forschungszentrum Dresden, 2010. http://nbn-resolving.de/urn:nbn:de:bsz:d120-qucosa-29001.

Full text
Abstract:
This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of delta-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of "bottom-up" structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15nm thin SiO2 layer, which is enclosed by a 50nm poly-Si capping layer and the Si substrate, is irradiated with Si+ ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degr
APA, Harvard, Vancouver, ISO, and other styles
5

Röntzsch, Lars. "Self-Organization of Nanocluster delta-Layers at Ion-Beam-Mixied Si-SiO2 Interfaces." Forschungszentrum Rossendorf, 2003. https://hzdr.qucosa.de/id/qucosa%3A21727.

Full text
Abstract:
This diploma thesis presents experimental evidence of a theoretical concept which predicts the self-organization of delta-layers of silicon nanoclusters in the buried oxide of a MOS-like structure. This approach of "bottom-up" structuring might be of eminent importance in view of future semiconductor memory devices. Unconventionally, a 15nm thin SiO2 layer, which is enclosed by a 50nm poly-Si capping layer and the Si substrate, is irradiated with Si+ ions. Ion impact drives the system to a state far from thermodynamic equilibrium, i.e. the local composition of the target is modified to a degr
APA, Harvard, Vancouver, ISO, and other styles
6

Nyamuda, Gibson Peter. "Optical second harmonic generation and pump-probe reflectivity measurements from Si/SiO2 interfaces." Stellenbosch : University of Stellenbosch, 2010. http://hdl.handle.net/10019.1/5317.

Full text
Abstract:
Thesis (PhD (Physics))--University of Stellenbosch, 2010.<br>ENGLISH ABSTRACT: Silicon/silicon dioxide (Si/SiO2) interface is widely used in microelectronics as the gate between the drain and source of most metal oxide semiconductor field effect transistors (MOSFETs). The functionality, reliability and electrical properties of such transistors are strongly dependent on the quality of the Si/SiO2 structure forming the gate. Characterization of the Si/SiO2 interface is important in understanding device degradation therefore the Si/SiO2 interface is a subject of intensive investigation. Rese
APA, Harvard, Vancouver, ISO, and other styles
7

Cai, Wei. "Ballistic Electron Emission Microscopy and Internal Photoemission Study on Metal Bi-layer/Oxide/Si, High-k Oxide/Si, and “End-on” Metal Contacts to Vertical Si Nanowires." The Ohio State University, 2010. http://rave.ohiolink.edu/etdc/view?acc_num=osu1269521615.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Fernandez, Thomas. "Contribution à l'évaluation de la technique de génération d'harmonique par faisceau laser pour la mesure des champs électriques dans les circuits intégrés (EFISHG)." Thesis, Bordeaux 1, 2009. http://www.theses.fr/2009BOR13846/document.

Full text
Abstract:
Ce travail contribue à l’évaluation de la technique de génération de seconde harmonique induite par un champ électrique quasi statique, ou technique EFISHG, appliquée au domaine de la microélectronique. Une description du principe de la technique EFISHG, basé sur l’optique non linéaire, permet d’appréhender l’origine physique de cette méthode. Un état de l’art a permis d’identifier deux champs d’applications liés à la microélectronique : l’analyse de défaillance, via la mesure en temps de réelle des variations de champs électriques internes dans les circuits intégrés, et la fiabilité par l’étu
APA, Harvard, Vancouver, ISO, and other styles
9

Sanchez, Marcela Beltran. "Models of defects near Si/SiO←2 interfaces." Thesis, University of Oxford, 1992. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.303579.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Bull, Michael. "Models of electronic defects at the Si-SiO←2 interface." Thesis, University of Oxford, 1989. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.237868.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Books on the topic "Interface Si/SiO2"

1

Helms, C. Robert, and Bruce E. Deal, eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Helms, C. Robert, and Bruce E. Deal, eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (1st 1988 Atlanta, Ga.). The physics and chemistry of SiO₂ and the Si-SiO₂ interface. Plenum Press, 1988.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
4

Angeles, CA) International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (5th 2005 Los. The physics and chemistry of SiO₂ and the Si-SiO₂ interface--5. Electrochemical Society, 2005.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
5

International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (3rd 1996 Los Angeles, Calif.). The physics and chemistry of SiO₂ and the Si-SiO₂ interface-3, 1996: Proceedings of the Third International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface. Edited by Massoud Hisham Z, Poindexter Edward H, and Helms C. Robert. Electrochemical Society, 1996.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
6

International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface (4th 2000 Toronto, Ont.). The physics and chemistry of SiO₂ and the Si-SiO₂ interface--4, 2000: Proceedings of the Fourth International Symposium on the Physics and Chemistry of SiO₂ and the Si-SiO₂ Interface, Toronto, Canada, May 15-18, 2000. Edited by Massoud Hisham Z, Electrochemical Society Electronics Division, and Electrochemical Society. Dielectric Science and Technology Division. Electrochemical Society, 2000.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
7

(Editor), B. E. Deal, and C. R. Helms (Editor), eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, 1989.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
8

Deal, B. E., and C. R. Helms. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer, 2013.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
9

(Editor), B. E. Deal, and C. R. Helms (Editor), eds. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, 1993.

Find full text
APA, Harvard, Vancouver, ISO, and other styles
10

Deal, B. E., and C. R. Helms. The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer, 2013.

Find full text
APA, Harvard, Vancouver, ISO, and other styles

Book chapters on the topic "Interface Si/SiO2"

1

Schulz, M. "Characterization of the SiO2-Si Interface." In Semiconductor Silicon. Springer Berlin Heidelberg, 1989. http://dx.doi.org/10.1007/978-3-642-74723-6_17.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Himpsel, F. J., F. R. McFeely, A. Taleb-Ibrahimi, J. A. Yarmoff, and G. Hollinger. "Microscopic Structure Of The SiO2/Si Interface." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_24.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Raider, S. I. "The Role of SiO in Si Oxidation at a Si-SiO2 Interface." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Halbritter, J. "ARXPS Analysis of Si-SiO2-Interfaces." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_25.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Jain, Sanjay. "The Neutral Level of Si-SO2 Interface States." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_40.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Hahn, P. O., M. Grundner, A. Schnegg, and H. Jacob. "The Si-SiO2 Interface Roughness: Causes and Effects." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_44.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Himpsel, F. J., D. A. Lapiano-Smith, J. F. Morar, and J. Bevk. "Local Bonding at SiO2/Si Interfaces." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2. Springer US, 1993. http://dx.doi.org/10.1007/978-1-4899-1588-7_25.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Ma, T. P., Yasushiro Nishioka, and E. F. da Silva. "Defect Transformation Process at SiO2/Si Interfaces." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_42.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

Hecht, M. H., P. J. Grunthaner, and F. J. Grunthaner. "New Results on the SiO2/Si Interface." In Proceedings of the 17th International Conference on the Physics of Semiconductors. Springer New York, 1985. http://dx.doi.org/10.1007/978-1-4615-7682-2_47.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Hattori, Takeo, Hiroaki Yamagishi, Noboru Koike, Keitaro Imai, and Kikuo Yamabe. "Dependence of SiO2/Si Interface Structures on Oxidation Process." In The Physics and Chemistry of SiO2 and the Si-SiO2 Interface. Springer US, 1988. http://dx.doi.org/10.1007/978-1-4899-0774-5_26.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Conference papers on the topic "Interface Si/SiO2"

1

ONO, Yukinori, Michiharu TABE, and Yutaka SAKAKIBARA. "Fluorine Segregation at SiO2/Si Interface." In 1991 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1991. http://dx.doi.org/10.7567/ssdm.1991.s-b-4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Plucinski, Kazimierz J. "Structure of the Si-SiO2 interface." In International Conference on Solid State Crystals '98, edited by Antoni Rogalski and Jaroslaw Rutkowski. SPIE, 1999. http://dx.doi.org/10.1117/12.344732.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Kirichenko, Taras, Decai Yu, Gyenong Hwang, and Sanjay Banerjee. "Vacancy At Si-SiO2 Interface: Ab-Initio Study." In 2006 International Conference on Simulation of Semiconductor Processes and Devices. IEEE, 2006. http://dx.doi.org/10.1109/sispad.2006.282859.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

TAMURA, Yoshinari, Kazuaki OHISHI, Hiroshi NOHIRA, and Takeo HATTORI. "Initial Stage of SiO2/Si Interface Formation on Si(111) Surface." In 1992 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1992. http://dx.doi.org/10.7567/ssdm.1992.pa1-2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Li, Xiuyan, Takeaki Yajima, Tomonori Nishimura, Kosuke Nagashio, and Akira Toriumi. "Analytical Formulation of SiO2-IL scavenging in HfO2/SiO2/Si gate stacks - A key is the SiO2/Si interface reaction." In 2014 IEEE International Electron Devices Meeting (IEDM). IEEE, 2014. http://dx.doi.org/10.1109/iedm.2014.7047094.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Ushio, Jiro, Keiko Kushida-Abdelghafar, and Takuya Maruizumi. "Interface Structures Generated by Negative-Bias Temperature Instability in Si/SiO2 and Si/SiOxNy Interfaces." In 2001 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 2001. http://dx.doi.org/10.7567/ssdm.2001.a-3-2.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Rong, Li-mei, Bo Liu, Zhi-jun Meng, Kui Liu, Qi Yu, and Yang Liu. "Experimental and computational studies on the refractive index and interface state for nano interface of SiO2/Si and Si3N4/SiO2/Si." In 2016 IEEE International Nanoelectronics Conference (INEC). IEEE, 2016. http://dx.doi.org/10.1109/inec.2016.7589274.

Full text
APA, Harvard, Vancouver, ISO, and other styles
8

Kobayashi, Hikaru, Emi Kanazaki, Akira Asano, Kenji Yoneda, Yoshihiro Todokoro, and Mikihiko Nishitani. "Crown-Ether Cyanide Treatment to Eliminate Interface States at Si/SiO2 Interfaces." In 1999 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1999. http://dx.doi.org/10.7567/ssdm.1999.b-7-4.

Full text
APA, Harvard, Vancouver, ISO, and other styles
9

YAMAMOTO, Hideaki, Sinya IWASAKI, Katsuhide OKUMURA, Takeshi KANASHIMA, Masanori OKUYAMA, and Yoshihiro HAMAKAWA. "Characterization of Charged Traps near Si-SiO2 Interface in Photo-CVD SiO2 Film." In 1995 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1995. http://dx.doi.org/10.7567/ssdm.1995.pc-5-1.

Full text
APA, Harvard, Vancouver, ISO, and other styles
10

Mizushima, I., H. Kamiya, N. Arai, et al. "Diffusion of Carbon in SiO2 Films and Its Segregation at Si/SiO2 Interface." In 1996 International Conference on Solid State Devices and Materials. The Japan Society of Applied Physics, 1996. http://dx.doi.org/10.7567/ssdm.1996.b-4-3.

Full text
APA, Harvard, Vancouver, ISO, and other styles

Reports on the topic "Interface Si/SiO2"

1

Yakovlev, V. A., and E. A. Irene. An Interface Enhanced Spectroscopic Ellipsometry Technique: Application to Si-SiO2. Defense Technical Information Center, 1991. http://dx.doi.org/10.21236/ada242867.

Full text
APA, Harvard, Vancouver, ISO, and other styles
2

Vitkavage, Susan C., Eugene A. Irene, and Hisham Z. Massoud. An Investigation of Si-SiO2 Interface Charges in Thermally Oxidized (100), (110), (111), (511) Silicon. Defense Technical Information Center, 1990. http://dx.doi.org/10.21236/ada231244.

Full text
APA, Harvard, Vancouver, ISO, and other styles
3

Liu, Q., and E. A. Irene. Si/SiO2 Interfere Studies by Immersion Ellipsometry. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada265151.

Full text
APA, Harvard, Vancouver, ISO, and other styles
4

Chizmeshya, A., A. Demkov, T. Lenosky, and O. Sankey. Energetics of crystalline silicon dioxide-silicon (SiO2/Si) interfaces. Office of Scientific and Technical Information (OSTI), 1999. http://dx.doi.org/10.2172/13850.

Full text
APA, Harvard, Vancouver, ISO, and other styles
5

Duscher, G., S. J. Pennycook, H. J. Gao, N. D. Browning, and R. Singh. Structure, composition, and strain profiling of Si/SiO{sub 2} interfaces. Office of Scientific and Technical Information (OSTI), 1998. http://dx.doi.org/10.2172/672106.

Full text
APA, Harvard, Vancouver, ISO, and other styles
6

Poler, J. C., K. K. McKay, and E. A. Irene. Characterization of the Si/SiO2 Interfere Morphology from Quantum Oscillations in Fowler-Nordheim Tunneling Currents. Defense Technical Information Center, 1993. http://dx.doi.org/10.21236/ada265149.

Full text
APA, Harvard, Vancouver, ISO, and other styles
7

Devine, R. A. B., C. Mourrain, M. J. Bouzid, W. L. Warren, and K. Vanheusden. Electron induced depassivation of H and D terminated Si/SiO{sub 2} interfaces. Office of Scientific and Technical Information (OSTI), 1997. http://dx.doi.org/10.2172/432994.

Full text
APA, Harvard, Vancouver, ISO, and other styles
We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!