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Relevant bibliographies by topics / Interfaces and thin films

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Academic literature on the topic 'Interfaces and thin films'

Author: Grafiati

Published: 4 June 2021

Last updated: 14 February 2022

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Journal articles on the topic "Interfaces and thin films"

1

Foord, JohnS. "Thin films and interfaces II." Journal of Electroanalytical Chemistry and Interfacial Electrochemistry 187, no. 1 (May 1985): 203–4. http://dx.doi.org/10.1016/0368-1874(85)85588-x.

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Koike, J., and A. Sekiguchi. "OS06W0419 Mechanical Strength of Metallic Thin-Film Interfaces." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS06W0419. http://dx.doi.org/10.1299/jsmeatem.2003.2._os06w0419.

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McFadden, G. B., S. R. Coriell, L. N. Brush, and K. A. Jackson. "Interface Instabilities During Laser Melting of Thin Films." Applied Mechanics Reviews 43, no. 5S (May 1, 1990): S70—S75. http://dx.doi.org/10.1115/1.3120854.

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Thin silicon films on a cooled substrate are often found to develop two-phase lamellar structures upon radiative heating. Jackson and Kurtz developed a two-dimensional model for the process in which the heated film consists of alternating parallel bands of liquid and solid phases separated by straight solid-liquid interfaces. To understand the cellular or dendritic structures that sometimes are observed in these interfaces, they also performed a linearized morphological stability analysis and obtained the conditions for the growth or decay of infinitesimal perturbations to the interface. In this work we extend that analysis to finite amplitudes by developing a boundary integral representation of the thermal field, and obtain numerical solutions for nonplanar solid-liquid interfaces.

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Spaepen, F. "Interfaces and stresses in thin films." Acta Materialia 48, no. 1 (January 2000): 31–42. http://dx.doi.org/10.1016/s1359-6454(99)00286-4.

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Lambropoulos, John C. "Thermomechanics of thin films and interfaces." Journal of Electronic Materials 19, no. 9 (September 1990): 895–901. http://dx.doi.org/10.1007/bf02652914.

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IWASAKI, Tomio. "OS20-1-1 Molecular Dynamics Study on the Adhesion Strength of Interfaces between Thin Films." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2011.10 (2011): _OS20–1–1—. http://dx.doi.org/10.1299/jsmeatem.2011.10._os20-1-1-.

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Jameson, John R., Walter Harrison, and P. B. Griffin. "Electronic susceptibility in thin films and interfaces." Journal of Applied Physics 92, no. 8 (October 15, 2002): 4431–40. http://dx.doi.org/10.1063/1.1507812.

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Harris, John G., and Gerry Wickham. "Acoustic imaging of thin films or interfaces." Journal of the Acoustical Society of America 98, no. 5 (November 1995): 2874–75. http://dx.doi.org/10.1121/1.413169.

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Azzam, R. M. A. "Polarization optics of interfaces and thin films." physica status solidi (a) 205, no. 4 (April 2008): 709–14. http://dx.doi.org/10.1002/pssa.200777745.

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Jakob, Thomas, Gerd Kleideiter, and Wolfgang Knoll. "Thin Films and Interfaces at High Pressure." International Journal of Polymer Analysis and Characterization 9, no. 1-3 (January 2004): 153–75. http://dx.doi.org/10.1080/10236660490890538.

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Dissertations / Theses on the topic "Interfaces and thin films"

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Grundy, Michael J. "Neutron scattering from interfaces." Thesis, University of Bristol, 1991. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.357011.

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Sorrell, Courtney Davis. "Fundamental studies of responsive microgel thin films at interfaces." Diss., Atlanta, Ga. : Georgia Institute of Technology, 2008. http://hdl.handle.net/1853/24679.

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Thesis (Ph.D.)--Chemistry and Biochemistry, Georgia Institute of Technology, 2009.
Committee Chair: Lyon, L. Andrew; Committee Member: Beckham, Haskell; Committee Member: Janata, Jiri; Committee Member: Pielak, Gary; Committee Member: Ragauskas, Arthur

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Clarke, John. "X-ray scattering from thin films and interfaces." Thesis, Durham University, 1999. http://etheses.dur.ac.uk/4499/.

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The non-destructive study and characterisation of thin films and their interfaces, on an atomic scale, is a crucially important area of study in many areas of science and technology. In this thesis both high angle and grazing incidence x-ray scattering techniques have been used to study the effect of depositing thin films on surfaces with a periodic roughness, as well as studying the structure of laterally modulated surfaces themselves. High angle diffraction measurements of the out-of-plane size of Co crystallites and the crystalline texture of the Ag lattice, in a series of CoAg granular fihns, has allowed a consistent growth mechanism for the Co grains to be deduced. In grazing incidence scattering studies of this series of thin, granular films it was observed that the diffuse scatter was offset from the specular condition and the position of this offset was seen to vary, sinusoidally, upon rotation of the sample. This led to the conclusion that the growth techniques employed had caused a regular step-bunching of the Si (111) substrate. As step-bunching of surfaces can affect greatly the properties of thin films deposited on them, the ability to characterise the substrate after growth is extremely important. In spin-valves deposited on rough, tiled, silicon oxide substrates, the presence of strong interference fringes in the off-specular scatter demonstrated that vertically conformal roughness dominated the system and this was seen to result in the degradation of the magnetic sensitivity of the samples. Conversely, an enhancement in the photoluminescence from thin polymer films deposited on laterally modulated substrates led to a series of studies being made on such structures. In order to obtain information on the lateral period of such structures, as well as their roughness and thickness, existing scattering theories have been modified and a semi-kinematical code of the coherent scatter has been developed.

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Erdy, Christine. "Self-Assembled Host-Guest Thin Films for Functional Interfaces." Thesis, Virginia Tech, 2008. http://hdl.handle.net/10919/36049.

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The functionalization of surfaces has received attention because the process allows the design and tailoring of substrate surfaces with a new or improved function. â Host-guestâ thin film complexes are composed of â hostâ molecules attached the substrate surface, either through physisorption or covalent bonds, with cavities for the inclusion of desired â guestâ molecules for the functionalization of the surface. Two methods for fabricating functional â host-guestâ thin films were investigated: Langmuir-Blodgett (LB) deposition and self-assembly monolayer (SAM). Langmuir films were created at the air-water interface using octadecanesulfonic acid (C18S) as the amphiphilic â hostâ molecules separated by hydrophilic guanidinium (G) spacer molecules, which created a cavity allowing the inclusion of desired â guestâ molecules. Surface pressure-area isotherms of the (G)C18S, with and without guests, are characterized by the lift-off molecular areas and are use to determine the proper deposition surface pressure. â Host-guestâ Langmuir films are deposited onto silicon substrates using the LB deposition technique. The LB films were then subjected to stability testing using different solvents over increasing periods of time. Grazing-angle incidence X-ray diffraction (GIXD), specular X-ray reflectivity (XRR) and transfer ratio measurements were used to characterize the crystallinity, film thickness, overall film stability and film coverage. The GIXD data revealed that the crystallinity of the deposited film varies with the â guestâ molecules and can be disrupted by the functional group on the â guestâ molecule through hydrogen bonding. After modeling the XRR data using StochFit, it was discovered that the more polar solvent, tetrahydrofuran (THF), removed the film completely while the nonpolar solvent, hexane, compacted the thin film and increased the electron density. With transfer ratios around 0.95 to 1.05, the deposited films were homogenous. The second method used was self-assembly monolayers, which differs from Langmuir films in that they are created by a spontaneous chemical synthesis from immersing a substrate into a solution containing an active surfactant. Octadecyltrichlorosilane (OTS) was used initially as a molecule to study the self-assembled monolayer procedure. To study a â host-guestâ self-assembled monolayer system, a compound is being synthesized from 9-bromoanthracene. This compound would already contain the cavity necessary for the inclusion of â guestâ molecules. The solution that contained OTS was composed of a 4:1 mixture of anhydrous octadecane: chloroform. Silicon substrates with a deposited oxide layer were hydroxylated for the surfactant binding chemical reaction to occur. The OTS SAMs were exposed to the same stability tests as the LB films. Surface contact angle measurements were taken of the OTS SAMs before and after the stability tests. The contact angle prior to the stability tests was 110Â° (Â±2Â°). The contact angle after immersion in THF was 101Â° (Â±2Â°) while the contact angle resulting from immersion in hexane was 105Â° (Â±2Â°). From the contact angle measurements, the degradation of the OTS SAMs was less extensive than that of the (G)C18S LB films.
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Sainju, Deepak. "Spectroscopic Ellipsometry Studies of Ag and ZnO Thin Films and Their Interfaces for Thin Film Photovoltaics." University of Toledo / OhioLINK, 2015. http://rave.ohiolink.edu/etdc/view?acc_num=toledo1430326934.

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Burrows, Christopher W. "Growth and characterisation of MnSb thin films and interfaces." Thesis, University of Warwick, 2012. http://wrap.warwick.ac.uk/55927/.

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The deposition of Mn on to reconstructed InSb and GaAs surfaces has been studied by re ection high-energy electron diffraction (RHEED), atomic force microscopy and scanning tunnelling microscopy. On both Ga- and As-terminated GaAs(001), a Mn-induced (2x2) reconstruction is observed. In contrast, there are no well defined Mn-induced surface reconstructions on InSb. Islands are observed to form on all of the surfaces studied, with islands on the Group III-rich surfaces composed of elemental Mn and of an alloy on the Group V-rich surfaces. The conversion from Group III(V)-rich to Group V(III)-rich surfaces are discussed in terms of basic thermodynamic quantities and a number of models for surface atom substitution are proposed as pathways for MnAs and MnSb island formation. A high resolution X-ray diffraction study (HRXRD) has been performed on niccolite, cubic and wurtzite crystallites present within MnSb thin films grown on GaAs(111) substrates. It is observed that the lattice parameters of the polymorphs do not depend on the film thickness or the time-corrected beam ux ratio, J. The niccolite phase is found to relax rapidly (within 3 nm) and the average c lattice parameter of these films is 5.791(1) A. Variations in the c lattice parameter indicate that the average stoichiometry of the films varies on a per sample basis and this may act to promote the formation of polymorphs. Cubic MnSb crystallites exhibit a large strain dispersion of approximately 1 % and a rhombohedral or trigonal distortion is believed to be the origin. Quantitative analysis of asymmetric reciprocal space maps reveals that films grown using the optimised conditions have the highest concentration of the cubic polymorph, with lower values of J in the optimised range promoting this polymorph. The growth of MnSb on Ge(001) and Ge(111) substrates has been investigated. On Ge(001) growth proceeds through the formation of three dimensional islands and no dependence on the growth conditions is observed. Evidence for (1102) and (1120) crystallites is seen in XRD and RHEED, respectively. The interface between the MnSb islands and the Ge(001) substrate is sharp with no evidence for interfacial reactivity. The epitaxial growth of MnSb on Ge(111) is reported for the first time. The growth orientation is confirmed to be (0001) by X-ray diffraction while the layers are found to be ferromagnetic with a Curie temperature in excess of 300 K.

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Zhao, Haibin. "Optical characterization of ferromagnetic heterostructure *interfaces and thin films." W&M ScholarWorks, 2006. https://scholarworks.wm.edu/etd/1539623494.

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This thesis presents optical characterizations of interfaces in ferromagnetic heterostructures and thin films used for spin polarized electronic devices. In these experiments, femtosecond laser spectroscopies are exploited to investigate the interface magnetization reversal, spin precession, and band offset, which are crucial in determining the performances of spintronic devices.;First, magnetization-induced second-harmonic-generation (MSHG) is applied to study interface magnetism in a hybrid structure containing a noncentrosymmetric semiconductor---Fe/AlGaAs. The reversal process of Fe interface layer magnetization is compared with the bulk magnetization reversal. In Fe/AlGaAs (001), the interface magnetization is found to be decoupled from the bulk magnetization based on the different switching characteristics---single step switching occurs at the interface layer, whereas two-jump switching occurs in the bulk. In contrast, the interface layer in Fe/AlGaAs (110) is rigidly coupled with the bulk Fe, indicating a strong impact of electronic structure on the magnetic interaction despite the same chemical composition. Furthermore, a time-resolved MSHG study demonstrates a coherent interface magnetization precession in Fe/AlGaAs (001), implying the feasibility of fast precessional control of interfacial spin. The interface magnetization precession exhibits a higher frequency and opposite phase for a given applied field compared to the bulk magnetization precession.;Second, uniform magnetization precession in the Lac0.67Ca 0.33MnO3 (LCMO) and La0.67Sr0.33MnO 3 (LSMO) films grown on different substrates are investigated by time-resolved magneto-optic Kerr effect. The parameters of magnetic anisotropy are determined from the field dependence of the precession frequency. The strain-free LCMO films grown on NdGaO3 exhibit a uniaxial in-plane anisotropy induced by the tilting of the oxygen octahedra in NdGaO3 An easy-plane magnetic anisotropy is found in the tensile-strained films grown on SrTiO 3, whereas the compressive-strained film grown on LaAlO3 exhibits an easy normal-to-plane axis.;Third, a table-top internal photoemission system is developed to measure the band offsets across semiconductor heterointerfaces by utilizing an optical parametric amplifier as the bright light source. The conduction band offsets DeltaE c = 660 meV and 530 meV at the CdCr2Se4-GaAs and CdCrZSe4-ZnSe interfaces are determined from the threshold energies of the photocurrent spectrum. The band offset is shown to be reduced by engineering the interface bonding and stoichiometry.

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Beerman, Michael. "Transverse freezing of thin liquid films /." Thesis, Connect to this title online; UW restricted, 2007. http://hdl.handle.net/1773/10573.

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Parks, Carl L. "An experimental approach for studying the creep behavior of thin film/ substrate interfaces." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Sep%5FParks.pdf.

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Thornell, Mark E. "Sample fabrication and experimental design for studying interfacial creep at thin film/silicon interfaces." Thesis, Monterey, Calif. : Springfield, Va. : Naval Postgraduate School ; Available from National Technical Information Service, 2004. http://library.nps.navy.mil/uhtbin/hyperion/04Mar%5FThornell.pdf.

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Books on the topic "Interfaces and thin films"

1

Solid surfaces, interfaces and thin films. 4th ed. Berlin: Springer, 2001.

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Lüth, Hans. Solid Surfaces, Interfaces and Thin Films. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001. http://dx.doi.org/10.1007/978-3-662-04352-3.

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Lüth, Hans. Solid Surfaces, Interfaces and Thin Films. Berlin, Heidelberg: Springer Berlin Heidelberg, 2010. http://dx.doi.org/10.1007/978-3-642-13592-7.

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Lüth, Hans. Solid Surfaces, Interfaces and Thin Films. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-10756-1.

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Solid surfaces, interfaces and thin films. 5th ed. Heidelberg ; New York: Springer, 2010.

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Lüth, Hans. Solid Surfaces, Interfaces and Thin Films. Berlin, Heidelberg: Springer Berlin Heidelberg, 2001.

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Irene, Eugene A. Surfaces, interfaces, and thin films for microelectronics. Hoboken, N.J: John Wiley, 2008.

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Irene, Eugene A. Surfaces, interfaces, and thin films for microelectronics. Hoboken, N.J: Wiley-Interscience, 2008.

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Statistical mechanics of phases, interfaces, and thin films. New York: VCH, 1996.

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Bubble and drop interfaces. Leiden: Brill, 2011.

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Book chapters on the topic "Interfaces and thin films"

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Bucknall, David G. "Polymer Interfaces and thin Films." In Neutrons in Soft Matter, 539–69. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2011. http://dx.doi.org/10.1002/9780470933886.ch20.

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Dupeux, Michel, Muriel Braccini, and Guillaume Parry. "Damage in Thin Films on Substrates." In Mechanics of Solid Interfaces, 273–94. Hoboken, NJ, USA: John Wiley & Sons, Inc., 2013. http://dx.doi.org/10.1002/9781118561669.ch9.

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Perry, C. C., S. R. Carlo, A. J. Wagner, C. Vecitis, J. Torres, K. Kolegraff, and D. H. Fairbrother. "Self-Assembled Monolayers as Models for Polymeric Interfaces." In Thin Films: Preparation, Characterization, Applications, 215–30. Boston, MA: Springer US, 2002. http://dx.doi.org/10.1007/978-1-4615-0775-8_15.

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Jachalski, Sebastian, Dirk Peschka, Stefan Bommer, Ralf Seemann, and Barbara Wagner. "Structure Formation in Thin Liquid-Liquid Films." In Transport Processes at Fluidic Interfaces, 531–74. Cham: Springer International Publishing, 2017. http://dx.doi.org/10.1007/978-3-319-56602-3_18.

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Haindl, Silvia. "More Interfaces: Multilayers and Heterostructures with Fe-Based Superconductors." In Iron-Based Superconducting Thin Films, 235–52. Cham: Springer International Publishing, 2021. http://dx.doi.org/10.1007/978-3-030-75132-6_5.

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Guldin, Stefan. "Optical Aspects of Thin Films and Interfaces." In Inorganic Nanoarchitectures by Organic Self-Assembly, 19–32. Heidelberg: Springer International Publishing, 2013. http://dx.doi.org/10.1007/978-3-319-00312-2_2.

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Dragoman, Daniela, and Mircea Dragoman. "Optical Properties of Interfaces and Thin Films." In Optical Characterization of Solids, 235–51. Berlin, Heidelberg: Springer Berlin Heidelberg, 2002. http://dx.doi.org/10.1007/978-3-662-04870-2_5.

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Galuska, A. A., and N. Marquez. "Elemental Quantification Through Thin Films and Interfaces." In Springer Series in Chemical Physics, 363–65. Berlin, Heidelberg: Springer Berlin Heidelberg, 1986. http://dx.doi.org/10.1007/978-3-642-82724-2_97.

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Marshall, A. F., and R. Ramesh. "Microstructure of Interfaces in YBa2Cu3O7-x Thin Films." In Interfaces in High-Tc Superconducting Systems, 71–115. New York, NY: Springer New York, 1994. http://dx.doi.org/10.1007/978-1-4612-2584-3_3.

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Sydorenko, Alexander. "Nanostructures in Thin Films from Nanostructured Polymeric Templates: Self-Assembly." In Polymer Surfaces and Interfaces, 261–73. Berlin, Heidelberg: Springer Berlin Heidelberg, 2008. http://dx.doi.org/10.1007/978-3-540-73865-7_13.

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Conference papers on the topic "Interfaces and thin films"

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Niquet, G., J. P. Dufour, G. Chabrier, M. Q' Jani, and P. Vernier. "Characterization By Electroreflectance Of Thin Films And Thin Film Interfaces In Layered Structures." In Semiconductor Conferences, edited by Orest J. Glembocki, Fred H. Pollak, and Jin-Joo Song. SPIE, 1987. http://dx.doi.org/10.1117/12.940900.

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Criswell, Scott G., Timothy A. Morgan, Gregory T. Forcherio, Samantha R. Koutsares, Dmitry A. Kozak, Joshua D. Caldwell, and Jason G. Valentine. "Engineering three-dimensional Schottky interfaces towards efficient extraction of plasmonic hot electrons." In Nanoengineering: Fabrication, Properties, Optics, Thin Films, and Devices XVIII, edited by Wounjhang Park, André-Jean Attias, and Balaji Panchapakesan. SPIE, 2021. http://dx.doi.org/10.1117/12.2594262.

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Motti, Silvia, Timothy Crothers, Rong Yang, Jianpu Wang, and Laura Herz. "Energy Cascades in Mixed-Phase Perovskite Thin Films: Charge-Carrier Dynamics and Mobilities." In 1st Interfaces in Organic and Hybrid Thin-Film Optoelectronics. València: Fundació Scito, 2019. http://dx.doi.org/10.29363/nanoge.inform.2019.018.

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Malyska, K., Ali Erdemir, Sergey A. Chizhik, Zygmunt Rymuza, and Lukasz Ratajczyk. "Amorphous Carbon Thin Films for Interfaces in MEMS." In World Tribology Congress III. ASMEDC, 2005. http://dx.doi.org/10.1115/wtc2005-63147.

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Friction and nanoscratch tests were performed on amorphous carbon thin films deposited on silicon. The effect of process and conditions on CVD deposited films was studied. Coefficient of friction between the films was estimated by using a special oscillating microtribometer. The lateral force and maximum depth of scratching were measured during nanoscratch tests. The comparison of tribological behavior of the tested films is presented and discussed.

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Haque, M. A. "Multi-Physics of Nanoscale Thin Films and Interfaces." In ASME 2011 Pacific Rim Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Systems. ASMEDC, 2011. http://dx.doi.org/10.1115/ipack2011-52038.

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We present the design and fabrication of a microchip capable of performing mechanical (tensile, fracture, fatigue), electrical (conductivity and band gap) and thermal (conductivity and specific heat) characterization of materials and interfaces. The chip can study thin films and wires of any material that can be deposited on a substrate or study thin coupons if the specimen is in bulk form. The 3 mm × 3 mm size of the chip results in the unique capability of in-situ testing in analytical chambers such as the transmission electron microscope. The basic concept is to ’see’ the micro-mechanisms while ‘measuring’ the deformation and transport properties of materials and interfaces. The advantage of such simultaneous acquisition of quantitative and qualitative data is the accurate and quick physics-based modeling of materials behavior. We present preliminary studies on multi-physics, or the coupling among mechanical thermal and electrical domains in materials will be presented. These results are particularly important when the specimen dimension becomes comparable to the mean free paths of electron and phonons.

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Chakraborty, Purushottam. "Quantitative MCsn+ - SIMS for direct compositional analysis of interfaces of low-dimensional structures." In INDIAN VACUUM SOCIETY SYMPOSIUM ON THIN FILMS: SCIENCE AND TECHNOLOGY. AIP, 2012. http://dx.doi.org/10.1063/1.4732357.

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Moghe, Shweta, A. D. Acharya, and S. B. Shrivastava. "Study of metal oxide doped polymeric thin films." In EMERGING INTERFACES OF PHYSICAL SCIENCES AND TECHNOLOGY 2019: EIPT2019. AIP Publishing, 2020. http://dx.doi.org/10.1063/5.0006263.

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Flores, F., R. Saiz-Pardo, and R. Rincon. "Interfaces in crystalline materials." In Thin Film Physics and Applications: Second International Conference, edited by Shixun Zhou, Yongling Wang, Yi-Xin Chen, and Shuzheng Mao. SPIE, 1994. http://dx.doi.org/10.1117/12.190787.

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Robison, Andrew, Lei Lei, Sowmya Ramarapu, and Marisol Koslowski. "Interface Effects in Strained Thin Films." In ASME 2009 International Mechanical Engineering Congress and Exposition. ASMEDC, 2009. http://dx.doi.org/10.1115/imece2009-12539.

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Crystalline films grown epitaxially on a substrate consisting of a different crystalline material are of considerable interest in optoelectronic devices and the semiconductor industry. The film and substrate have in general different lattice parameters. This lattice mismatch affects the quality of interfaces and can lead to very high densities of misfit dislocations. Here we study the evolution of these misfit dislocations in a single crystal thin film. In particular, we consider the motion of a dislocation gliding on its slip plane within the film and its interaction with multiple obstacles and sources. Our results show the effect of obstacles such as precipitates and other dislocations on the evolution of a threading dislocation in a metallic thin film. We also show that the material becomes harder as the film thickness decreases in excellent agreement with experiments.

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Riedl, Thomas J., Neda Pourdavoud, Andre Mayer, Tobias Haeger, Ralf Heiderhoff, Ivan Shutsko, Hella-Christin Scheer, and Patrick Görrn. "Ultra-smooth perovskite thin films for lasers (Conference Presentation)." In Physical Chemistry of Semiconductor Materials and Interfaces XVII, edited by Hugo A. Bronstein and Felix Deschler. SPIE, 2018. http://dx.doi.org/10.1117/12.2319364.

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Reports on the topic "Interfaces and thin films"

1

Weaver, John H. High Temperature Superconducting Materials: Thin Films, Surfaces, and Interfaces. Fort Belvoir, VA: Defense Technical Information Center, June 1991. http://dx.doi.org/10.21236/ada237359.

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Dai, Hai-Lung. Structure and Spectroscopy of Buried Interfaces in Organic Thin Films and Colloids. Fort Belvoir, VA: Defense Technical Information Center, March 2012. http://dx.doi.org/10.21236/ada563659.

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Buhrman, R. A. High Resolution Studies of Thin Film Interfaces. Fort Belvoir, VA: Defense Technical Information Center, February 1998. http://dx.doi.org/10.21236/ada337921.

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Buhrman, R. A. High Resolution Studies of Thin Film Interfaces. Fort Belvoir, VA: Defense Technical Information Center, March 1998. http://dx.doi.org/10.21236/ada338838.

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Lagally, Max G. Interface Effects on Magnetism in Model Thin Films. Fort Belvoir, VA: Defense Technical Information Center, January 2007. http://dx.doi.org/10.21236/ada464264.

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Richmond, Geraldine. Molecular Processes Underlying the Structure and Assembly of Thin Films and Nanoparticles at Complex interfaces. Office of Scientific and Technical Information (OSTI), June 2016. http://dx.doi.org/10.2172/1255449.

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Schneider, J. A., S. Guthrie, and N. R. Moody. Interface effects on the adhesion of thin aluminum films. Office of Scientific and Technical Information (OSTI), July 1997. http://dx.doi.org/10.2172/505282.

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Lad, Robert J. Structural, electronic and chemical properties of metal/oxide and oxide/oxide interfaces and thin film structures. Office of Scientific and Technical Information (OSTI), December 1999. http://dx.doi.org/10.2172/758832.

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Heske, C. Characterization of the Electronic and Chemical Structure at the Thin Film Solar Cell Interfaces: June 2005 -- June 2009. Office of Scientific and Technical Information (OSTI), September 2009. http://dx.doi.org/10.2172/964209.

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Garofalini, Stephen. Solid Electrolyte/Electrode Interfaces: Atomistic Behavior Analyzed Via UHV-AFM, Surface Spectroscopies, and Computer Simulations Computational and Experimental Studies of the Cathode/Electrolyte Interface in Oxide Thin Film Batteries. Office of Scientific and Technical Information (OSTI), March 2012. http://dx.doi.org/10.2172/1036745.

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