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Journal articles on the topic 'Interfaces and thin films'

Author: Grafiati
Published: 4 June 2021
Last updated: 14 February 2022

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1

Foord, JohnS. "Thin films and interfaces II." Journal of Electroanalytical Chemistry and Interfacial Electrochemistry 187, no. 1 (May 1985): 203–4. http://dx.doi.org/10.1016/0368-1874(85)85588-x.

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2

Koike, J., and A. Sekiguchi. "OS06W0419 Mechanical Strength of Metallic Thin-Film Interfaces." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2003.2 (2003): _OS06W0419. http://dx.doi.org/10.1299/jsmeatem.2003.2._os06w0419.

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3

McFadden, G. B., S. R. Coriell, L. N. Brush, and K. A. Jackson. "Interface Instabilities During Laser Melting of Thin Films." Applied Mechanics Reviews 43, no. 5S (May 1, 1990): S70—S75. http://dx.doi.org/10.1115/1.3120854.

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Thin silicon films on a cooled substrate are often found to develop two-phase lamellar structures upon radiative heating. Jackson and Kurtz developed a two-dimensional model for the process in which the heated film consists of alternating parallel bands of liquid and solid phases separated by straight solid-liquid interfaces. To understand the cellular or dendritic structures that sometimes are observed in these interfaces, they also performed a linearized morphological stability analysis and obtained the conditions for the growth or decay of infinitesimal perturbations to the interface. In this work we extend that analysis to finite amplitudes by developing a boundary integral representation of the thermal field, and obtain numerical solutions for nonplanar solid-liquid interfaces.
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4

Spaepen, F. "Interfaces and stresses in thin films." Acta Materialia 48, no. 1 (January 2000): 31–42. http://dx.doi.org/10.1016/s1359-6454(99)00286-4.

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5

Lambropoulos, John C. "Thermomechanics of thin films and interfaces." Journal of Electronic Materials 19, no. 9 (September 1990): 895–901. http://dx.doi.org/10.1007/bf02652914.

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6

IWASAKI, Tomio. "OS20-1-1 Molecular Dynamics Study on the Adhesion Strength of Interfaces between Thin Films." Abstracts of ATEM : International Conference on Advanced Technology in Experimental Mechanics : Asian Conference on Experimental Mechanics 2011.10 (2011): _OS20–1–1—. http://dx.doi.org/10.1299/jsmeatem.2011.10._os20-1-1-.

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7

Jameson, John R., Walter Harrison, and P. B. Griffin. "Electronic susceptibility in thin films and interfaces." Journal of Applied Physics 92, no. 8 (October 15, 2002): 4431–40. http://dx.doi.org/10.1063/1.1507812.

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8

Harris, John G., and Gerry Wickham. "Acoustic imaging of thin films or interfaces." Journal of the Acoustical Society of America 98, no. 5 (November 1995): 2874–75. http://dx.doi.org/10.1121/1.413169.

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9

Azzam, R. M. A. "Polarization optics of interfaces and thin films." physica status solidi (a) 205, no. 4 (April 2008): 709–14. http://dx.doi.org/10.1002/pssa.200777745.

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10

Jakob, Thomas, Gerd Kleideiter, and Wolfgang Knoll. "Thin Films and Interfaces at High Pressure." International Journal of Polymer Analysis and Characterization 9, no. 1-3 (January 2004): 153–75. http://dx.doi.org/10.1080/10236660490890538.

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11

Paine, David C. "Thin films and interfaces: Modeling and characterization." JOM 47, no. 3 (March 1995): 30. http://dx.doi.org/10.1007/bf03221432.

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12

Xu, B., A. N. Caruso, and P. A. Dowben. "Interfaces with vapor-evaporated polyaniline thin films." Applied Physics A: Materials Science & Processing 77, no. 1 (June 1, 2003): 155–58. http://dx.doi.org/10.1007/s00339-003-2082-z.

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13

Sachan, Ritesh, and Vikas Tomar. "Advanced Characterization of Interfaces and Thin Films." JOM 69, no. 2 (December 7, 2016): 225–26. http://dx.doi.org/10.1007/s11837-016-2208-3.

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14

Dramstad, Thorn A., Zhihao Wu, Grace M. Gretz, and Aaron M. Massari. "Thin Films and Bulk Phases Conucleate at the Interfaces of Pentacene Thin Films." Journal of Physical Chemistry C 125, no. 30 (July 27, 2021): 16803–9. http://dx.doi.org/10.1021/acs.jpcc.1c04432.

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15

Tietz, Lisa A., C. Barry Carter, Daniel K. Lathrop, Stephen E. Russek, Robert A. Buhrman, and Joseph R. Michael. "Crystallography of YBa2Cu3O6+x thin film-substrate interfaces." Journal of Materials Research 4, no. 5 (October 1989): 1072–81. http://dx.doi.org/10.1557/jmr.1989.1072.

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The epitactic nature of the growth of YBa2Cu3O6+x (YBCO) superconducting thin films on ceramic substrates has been studied using high-resolution electron microscopy (HREM) and selected-area diffraction (SAD) of cross-sectional specimens. The films were grown in situ on (001)-oriented MgO and (001)-oriented Y2O3-stabilized cubic ZrO2 (YSZ) single-crystal substrates by electron beam evaporation. Both of these materials have large lattice misfits with respect to YBCO. Different orientation relationships were observed for films grown on the two types of substrates. These orientation relationships are shown to provide the best matching of the oxygen sublattices across the substrate-film interfaces. A crystalline intermediate layer, 6 nm thick, between the YBCO film and YSZ substrate was observed by HREM and shown by EDS to be a Ba-enriched phase, possibly barium zirconate formed by a reaction. In contrast, the YBCO–MgO interface was found to be sharp and free of any intermediate layers.
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16

Carter, C. B. "Interfaces and the Growth of Thin Oxide Films." Materials Science Forum 126-128 (January 1993): 555–58. http://dx.doi.org/10.4028/www.scientific.net/msf.126-128.555.

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17

Geiss, R. H. "Analytical electron microscopy of thin films and interfaces." Thin Solid Films 220, no. 1-2 (November 1992): 154–59. http://dx.doi.org/10.1016/0040-6090(92)90565-s.

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18

Manne, Srinivas, and Iihan A. Aksay. "Thin films and nanolaminates incorporating organic/inorganic interfaces." Current Opinion in Solid State and Materials Science 2, no. 3 (January 1997): 358–64. http://dx.doi.org/10.1016/s1359-0286(97)80128-3.

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19

Jin, X. F. "Interfaces between magnetic thin films and GaAs substrate." Journal of Electron Spectroscopy and Related Phenomena 114-116 (March 2001): 771–76. http://dx.doi.org/10.1016/s0368-2048(00)00403-5.

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20

Shea, J. J. "Polymer surfaces, interfaces and thin films [Book Reviews]." IEEE Electrical Insulation Magazine 16, no. 6 (November 2000): 42–43. http://dx.doi.org/10.1109/mei.2000.887604.

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21

Tanaka, Keiji, Takeshi Serizawa, Wen-Chang Chen, Kookheon Char, and Takashi Kato. "Special Issue: Polymer surfaces, interfaces and thin films." Polymer Journal 48, no. 4 (April 2016): 323. http://dx.doi.org/10.1038/pj.2016.26.

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22

Hutchinson, John W., and K. S. Kim. "Symposium on Mechanics of Interfaces and Thin Films." Applied Mechanics Reviews 43, no. 5S (May 1, 1990): S266. http://dx.doi.org/10.1115/1.3120823.

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23

Morris, Gareth, Kathryn Hadler, and Jan Cilliers. "Particles in thin liquid films and at interfaces." Current Opinion in Colloid & Interface Science 20, no. 2 (April 2015): 98–104. http://dx.doi.org/10.1016/j.cocis.2015.03.001.

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24

Truong, Do Van, Hiroyuki Hirakata, and Takayuki Kitamura. "916 Evaluation of Interface Strength at Free Edge between Thin Films." Proceedings of Conference of Kansai Branch 2005.80 (2005): _9–31_—_9–32_. http://dx.doi.org/10.1299/jsmekansai.2005.80._9-31_.

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25

Portavoce, Alain, Ivan Blum, Khalid Hoummada, Dominique Mangelinck, Lee Chow, and Jean Bernardini. "Original Methods for Diffusion Measurements in Polycrystalline Thin Films." Defect and Diffusion Forum 322 (March 2012): 129–50. http://dx.doi.org/10.4028/www.scientific.net/ddf.322.129.

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With the development of nanotechnologies, the number of industrial processes dealing with the production of nanostructures or nanoobjects is in constant progress (microelectronics, metallurgy). Thus, knowledge of atom mobility and the understanding of atom redistribution in nanoobjects and during their fabrication have become subjects of increasing importance, since they are key parameters to control nanofabrication. Especially, todays materials can be both composed of nanoobjects as clusters or decorated defects, and contain a large number of interfaces as in nanometer-thick film stacking and buried nanowires or nanoislands. Atom redistribution in this type of materials is quite complex due to the combination of different effects, such as composition and stress, and is still not very well known due to experimental issues. For example, it has been shown that atomic transport in nanocrystalline layers can be several orders of magnitude faster than in microcrystalline layers, though the reason for this mobility increase is still under debate. Effective diffusion in nanocrystalline layers is expected to be highly dependent on interface and grain boundary (GB) diffusion, as well as triple junction diffusion. However, experimental measurements of diffusion coefficients in nanograins, nanograin boundaries, triple junctions, and interfaces, as well as investigations concerning diffusion mechanisms, and defect formation and mobility in these different diffusion paths are today still needed, in order to give a complete picture of nanodiffusion and nanosize effects upon atom transport. In this paper, we present recent studies dealing with diffusion in nanocrystalline materials using original simulations combined with usual 1D composition profile measurements, or using the particular abilities of atom probe tomography (APT) to experimentally characterize interfaces. We present techniques allowing for the simultaneous measurement of grain and GB diffusion coefficients in polycrystals, as well as the measurement of nanograin lattice diffusion and triple junction diffusion. We also show that laser-assisted APT microscopy is the ideal tool to study interface diffusion and nanodiffusion in nanostructures, since it allows the determination of 1D, 2D and 3D atomic distributions that can be analyzed using diffusion analytical solutions or numerical simulation.
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26

Josell, D., J. E. Bonevich, I. Shao, and R. C. Cammarata. "Measuring the interface stress: Silver/nickel interfaces." Journal of Materials Research 14, no. 11 (November 1999): 4358–65. http://dx.doi.org/10.1557/jmr.1999.0590.

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Interface stress is a surface thermodynamics quantity associated with the reversible work of elastically straining an internal solid interface. In a multilayered thin film, the combined effect of the interface stress of each interface results in an in-plane biaxial volume stress acting within the layers of the film that is inversely proportional to the bilayer thickness. We calculated the interface stress of an interface between {111} textured Ag and Ni on the basis of direct measurements of the dependence of the in-plane elastic strains on the bilayer thickness. The strains were obtained using transmission x-ray diffraction. Unlike previous studies of this type, we used freestanding films so that there was no need to correct for intrinsic stresses resulting from forces applied by the substrate that can lead to large uncertainties of the calculated interface stress value. Based on the lattice parameters of the bulk, pure elements, an interface stress of −2.02 ± 0.26 N/m was calculated using the x-ray diffraction results from films with bilayer thicknesses greater than 5 nm. This value is somewhat smaller than previous measurements obtained from as-deposited films supported by substrates. For smaller bilayer thicknesses the apparent interface stress becomes smaller in magnitude, possibly due to a loss of layering in the specimens.
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27

Kumar, Rajeev, Jyoti P. Mahalik, Kevin S. Silmore, Zaneta Wojnarowska, Andrew Erwin, John F. Ankner, Alexei P. Sokolov, Bobby G. Sumpter, and Vera Bocharova. "Capacitance of thin films containing polymerized ionic liquids." Science Advances 6, no. 26 (June 2020): eaba7952. http://dx.doi.org/10.1126/sciadv.aba7952.

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Electrode-polymer interfaces dictate many of the properties of thin films such as capacitance, the electric field experienced by polymers, and charge transport. However, structure and dynamics of charged polymers near electrodes remain poorly understood, especially in the high concentration limit representative of the melts. To develop an understanding of electric field–induced transformations of electrode-polymer interfaces, we have studied electrified interfaces of an imidazolium-based polymerized ionic liquid (PolyIL) using combinations of broadband dielectric spectroscopy, specular neutron reflectivity, and simulations based on the Rayleigh’s dissipation function formalism. Overall, we obtained the camel-shaped dependence of the capacitance on applied voltage, which originated from the responses of an adsorbed polymer layer to applied voltages. This work provides additional insights related to the effects of molecular weight in affecting structure and properties of electrode-polymer interfaces, which are essential for designing next-generation energy storage and harvesting devices.
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28

O, Se Young, Dan Phuong Nguyen, Chan Gyu Lee, Bon Heun Koo, Byeong Seon Lee, Toshitada Shimozaki, and Takahisa Okino. "Interdiffusion in Fe/Pt Multilayer Thin Films." Defect and Diffusion Forum 258-260 (October 2006): 199–206. http://dx.doi.org/10.4028/www.scientific.net/ddf.258-260.199.

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Interdiffusion in Fe/Pt multilayer thin films has been studied. [Fe(1nm)/Pt(1.5nm)]20 multilayers were prepared by DC magnetron sputtering technique and subsequently annealed at temperatures of 543 - 633K in vacuum lower than 10-6 torr. X-ray diffraction (XRD) studies on these multilayer systems revealed the interdiffusion coefficients from slope of the best straight line fit of first peak intensity versus annealing time. The temperature dependence of interdiffusion in the range of 543 - 633K can be described by D=4.98×10-24 exp (0.88eV/kT) m2S-1. The coercivity, measured by Vibrating Sample Magnetometer, of the multilayer with annealing time at 603K increased, which is believed to the increase of surface roughness by interdiffusion at the interfaces of Fe and Pt multilayers, enhancement of composition gradient; and/or formation of Fe-Pt reaction phase at the interface of Fe and Pt.
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29

Li, B. S. "Local Fatigue Evaluation in PZT Thin Films with Nanoparticles by Piezoresponse Force Microscopy." Smart Materials Research 2012 (November 3, 2012): 1–9. http://dx.doi.org/10.1155/2012/391026.

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Lead zirconate titanate (PZT) thin films with the morphotropic phase boundary composition (Zr/Ti = 52/48) have been prepared using a modified diol-based sol-gel route by introducing 1–5 mol% barium titanate (BT) nanoseeds into the precursor solution on platinized silicon substrates (Pt/Ti/SiO2/Si). Macroscopic electric properties of PZT film with nanoparticle showed a significant improvement of ferroelectric properties. This work aims at the systematic study of the local switching polarization behavior during fatigue in PZT films with and without nanoparticles by using very recent developed scanning piezoelectric microscopy (SPM). We show that the local fatigue performance, which is characterized by variations of local piezoloop with electric cycles, is significantly improved by adding some nanoseeds. It has been verified by scanning electron microscope (SEM) that the film grain morphology changes from columnar to granular structure with the addition of the nanoseeds. On the other hand, the existence of PtxPb transition phase, which existed in interface at early crystallization stage of pure PZT thin film, deteriorates the property of the interface. These microstructures and the interfaces of these films significantly affect the electrons injection occurred on the interfaces. The domain wall pinning induced by injected electrons and the succeeding penetration into the films is discussed to explain the fatigue performance.
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30

Alvarez-Zauco, E., H. Sobral, and E. Martínez-Loran. "Morphological, Optical and Electrical Characterization of the Interfaces in Fullerene-Porphyrin Thin Films." Journal of Nanoscience and Nanotechnology 20, no. 3 (March 1, 2020): 1732–39. http://dx.doi.org/10.1166/jnn.2020.17138.

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The role of the interfaces on the optoelectronical properties of porphyrin-fullerene composites has been studied by means of ultraviolet-visible (UV-Vis) and Raman spectroscopy, atomic force microscopy (AFM) and electric conductivity measurements. A simple method of synthesis of donor– acceptor complexes has been performed by subsequent deposition of C60 fullerene and tetraphenylporphyrin (H2TPP) thin films, using physical vapor deposition (PVD) on a (100) silicon substrate. UV-Vis spectra showed that the interaction of π-orbitals leads to a more ordering for the dipole moments arrangement and the π-orbitals overlapping between C60 and H2TPP molecules. Besides, Raman spectra presented intensity changes at 960 and 1000 cm-1, both related to the vibration of the pyrrole ring and the rocking of the H on the C atoms within the macrocycle. Therefore, it can be expected that the interface C60-H2TPP should have a main role in the electric response of the multilayer films. The measurements of surface conductivity indicated that interface has specific contribution, and the value of surface conductivity is enhanced by charge delocalization mechanisms occur by π–π stacking interactions. It was found that the transversal conductivity of 3-layer films was enhanced by a factor of 4 in comparison to 2-layer film, due to charge transfer mechanisms occur in the junctions that could extend the diffusion length of the charge carriers. Finally, the interface generated between C60 and H2TPP films, without any linking molecule, enhance charge transport mechanism through the films.
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31

Poklad, A., V. Klemm, G. Schreiber, C. Wüstefeld, and David Rafaja. "Microstructure Investigation of the PVD Thin Films of TRIP Steels." Solid State Phenomena 160 (February 2010): 273–79. http://dx.doi.org/10.4028/www.scientific.net/ssp.160.273.

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The combination of a TRIP steel with the MgO stabilized ZrO2 ceramics (MgO•ZrO2) is regarded as a promising way to increase the energy absorption in engineering materials. An additional contribution to the energy absorption in the counterparts, i.e. in the TRIP steel and in MgO•ZrO2, is expected to arise at the interfaces between the individual materials. However, the mutual crystallographic orientation of the TRIP steel and MgO•ZrO2 at their interface plays a crucial role both for the adhesion of the counterparts and for the energy absorption process. In this work, the interfaces between the TRIP steel and MgO•ZrO2 were studied on simplified systems, which were prepared in form of the TRIP steel thin films that were deposited using the magnetron sputtering on various substrates, e.g. Si wafer, MgO•ZrO2 and the Al2O3/ZrO2 composites. The substrates were both single-crystalline (Si wafer) and polycrystalline (MgO•ZrO2, Al2O3/ZrO2). The basic characteristics of the thin films (morphology, thickness, chemical composition) were obtained from the scanning electron micrographs and from the energy dispersive analysis of the characteristic X-rays (EDX). X-ray diffraction (XRD) and transmission electron microscopy with high-resolution (HRTEM) that was complemented by the Fast Fourier Transform (FFT) of the HRTEM micrographs were employed as the crucial experimental methods for the microstructure analysis of these thin films. XRD was used for the phase analysis and for the global texture analysis. The global texture analysis was performed via the pole figure measurements. FFT/HRTEM was used for the characterisation of the local orientation relationships between the TRIP steel and the respective substrate and for the visualisation of the interfaces between individual crystallites.
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32

Mattogno, Giulia, Guido Righini, Giampiero Montesperelli, and Enrico Traversa. "X-ray photoelectron spectroscopy investigation of MgAl2O4 thin films for humidity sensors." Journal of Materials Research 9, no. 6 (June 1994): 1426–33. http://dx.doi.org/10.1557/jmr.1994.1426.

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MgAl2O4 thin films, to be studied as active elements for humidity sensors, were deposited on Si/SiO2 substrates by radio-frequency sputtering. This paper discusses the x-ray photoelectron spectroscopy (XPS) investigation of these films. XPS demonstrated that the thin films had a stoichiometry close to that of MgAl2O4. The evaluation of the modified Auger parameter α' for Al gave structural information about the order of the crystalline structure of the thin films. The combination of Ar+ ion etching and XPS analysis showed the simultaneous presence of Mg, Al, and Si at the film-substrate interface. The thicknesses of the interfaces were calculated between 7 and 10 nm. The analysis of the binding energy (b.e.) values of the XPS peaks at different etching depths showed that O 1s and Si 2p b.e. values were characteristic of a silicate at the interface, whereas in the substrate they were typical of silica. This suggests a chemical interaction took place between film and substrate with the formation of a silicate layer at the interface, which may be the cause of the good adhesion of MgAl2O4 films to silica, as observed by peel tests with Scotch tape.
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33

He, Xiangjun, Si-Ze Yang, Kun Tao, and Yudian Fan. "Investigation of the interface reactions of Ti thin films with AlN substrate." Journal of Materials Research 12, no. 3 (March 1997): 846–51. http://dx.doi.org/10.1557/jmr.1997.0123.

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Pure bulk AlN substrates were prepared by hot-pressing to eliminate the influence of an aid-sintering substance on the interface reactions. AlN thin films were deposited on Si(111) substrates to decrease the influence of charging on the analysis of metal/AlN interfaces with x-ray photoelectron spectroscopy (XPS). Thin films of titanium were deposited on bulk AlN substrates by e-gun evaporation and ion beam assisted deposition (IBAD) and deposited on AlN films in situ by e-gun evaporation. Solid-state reaction products and reaction mechanism of the Ti/AlN system annealed at various temperatures and under IBAD were investigated by XPS, transmission electron microscopy (TEM), x-ray diffraction (XRD), and Rutherford backscattering spectrometry (RBS). Ti reacted with AlN to form a laminated structure in the temperature range of 600 °C to 800 °C. The TiAl3 phase was formed adjacent to the AlN substrate, TiN, and Ti4N3−x as well as Ti2N were formed above the TiAl3 layer at the interface. Argon ion bombardment during Ti evaporation promoted the interface reactions. No reaction products were detected for the sample as-deposited by evaporation. However, XPS depth profile of the Ti/AlN/Si sample showed that Ti–N binding existed at the interface between the AlN thin films and the Ti thin films.
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34

Fontcuberta, J., M. Bibes, B. Martı́nez, V. Trtik, C. Ferrater, F. Sánchez, and M. Varela. "Magnetoresistance at artificial interfaces in epitaxial ferromagnetic thin films." Journal of Magnetism and Magnetic Materials 211, no. 1-3 (March 2000): 217–25. http://dx.doi.org/10.1016/s0304-8853(99)00737-4.

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35

Bao, Qinye, Slawomir Braun, Chuanfei Wang, Xianjie Liu, and Mats Fahlman. "Interfaces of (Ultra)thin Polymer Films in Organic Electronics." Advanced Materials Interfaces 6, no. 1 (September 30, 2018): 1800897. http://dx.doi.org/10.1002/admi.201800897.

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36

Müller, H. J. "Hydration Forces between EO-Covered Interfaces in Thin Films." Materials Science Forum 25-26 (January 1988): 547–50. http://dx.doi.org/10.4028/www.scientific.net/msf.25-26.547.

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37

Brewer, S. J., S. C. Williams, C. D. Cress, and N. Bassiri-Gharb. "Effects of crystallization interfaces on irradiated ferroelectric thin films." Applied Physics Letters 111, no. 21 (November 20, 2017): 212905. http://dx.doi.org/10.1063/1.4993135.

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38

Dorignac, D., S. Schamm, Ch Grigis, J. Santiso, G. Garcia, and A. Figueras. "HREM Characterization of Interfaces in Thin MOCVD Superconducting Films." Le Journal de Physique IV 05, no. C5 (June 1995): C5–927—C5–934. http://dx.doi.org/10.1051/jphyscol:19955110.

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39

Clark, Anna M., J. H. Hao, Weidong Si, and X. X. Xi. "Properties of interfaces between SrTiO3 thin films and electrodes." Integrated Ferroelectrics 29, no. 1-2 (March 2000): 53–61. http://dx.doi.org/10.1080/10584580008216674.

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40

TSIAOUSSIS, I., CH B. LIOUTAS, and N. FRANGIS. "Structural models for twin interfaces in Pd thin films." Journal of Microscopy 223, no. 3 (September 2006): 208–11. http://dx.doi.org/10.1111/j.1365-2818.2006.01621.x.

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41

Jia, C. L., R. Hojczyk, M. Faley, U. Poppe, and K. Urban. "The interfaces in YBa2Cu3O7/BaTbO3and PrBa2Cu3O7/BaTbO3heterostructure thin films." Philosophical Magazine A 79, no. 4 (April 1999): 873–91. http://dx.doi.org/10.1080/01418619908210337.

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42

Navrotsky, Alexandra. "Calorimetry of nanoparticles, surfaces, interfaces, thin films, and multilayers." Journal of Chemical Thermodynamics 39, no. 1 (January 2007): 1–9. http://dx.doi.org/10.1016/j.jct.2006.09.011.

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43

Martin, A., O. Rossier, A. Buguin, P. Auroy, and F. Brochard-Wyart. "Spinodal dewetting of thin liquid films at soft interfaces." European Physical Journal E 3, no. 4 (December 2000): 337–41. http://dx.doi.org/10.1007/s101890070004.

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44

Dufrêche, J. F., and Th Zemb. "Bending: from thin interfaces to molecular films in microemulsions." Current Opinion in Colloid & Interface Science 49 (October 2020): 133–47. http://dx.doi.org/10.1016/j.cocis.2020.06.001.

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45

Junkaew, A., B. Ham, X. Zhang, and R. Arróyave. "Investigation of interfaces in Mg/Nb multilayer thin films." Computational Materials Science 108 (October 2015): 212–25. http://dx.doi.org/10.1016/j.commatsci.2015.07.003.

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46

Kralchevsky, Peter A. "Micromechanical description of curved interfaces, thin films, and membranes." Journal of Colloid and Interface Science 137, no. 1 (June 1990): 217–33. http://dx.doi.org/10.1016/0021-9797(90)90058-v.

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47

Kralchevsky, Peter A., and Ivan B. Ivanov. "Micromechanical description of curved interfaces, thin films, and membranes." Journal of Colloid and Interface Science 137, no. 1 (June 1990): 234–52. http://dx.doi.org/10.1016/0021-9797(90)90059-w.

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48

Tambe, David E., and Mukul M. Sharma. "Hydrodynamics of thin liquid films bounded by viscoelastic interfaces." Journal of Colloid and Interface Science 147, no. 1 (November 1991): 137–51. http://dx.doi.org/10.1016/0021-9797(91)90142-u.

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49

Lambropoulos, J. C., and S. M. Wan. "Stress concentration along interfaces of elastic-plastic thin films." Materials Science and Engineering: A 107 (January 1989): 169–75. http://dx.doi.org/10.1016/0921-5093(89)90385-7.

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50

Dufner, D. C. "HREM imaging of PtSn4/PtSn2 interfaces in Pt-Sn thin films." Proceedings, annual meeting, Electron Microscopy Society of America 52 (1994): 738–39. http://dx.doi.org/10.1017/s0424820100171420.

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Abstract:
High resolution electron microscopy (HREM) is a very useful technique for studying intermetallic alloy formation resulting from the interdiffusion of metals in thin films. In this work, reactions between Pt and Sn thin films are studied to elucidate mechanisms for structural and compositional changes during the interdiffusion process.Thin film specimens are prepared by the two-film method introduced by Shiojiri et al. Approximately 50 nm of Pt are vacuum-deposited onto holey carbon films mounted on 3mm diameter TEM grids. Sn films with an average thickness of 20 nm are created by evaporating Sn at rates of 1.5-3.0 nm/sec onto air-cleaved KBr substrates. The Sn films are then wet-stripped and collected on the Pt-coated holey carbon grids. A thin carbonaceous contamination layer exists between the metal films to prevent the onset of interdiffusion until the specimens are heated in situ in the TEM.TEM observations are carried out on the JEOL 2010 200kV TEM at Texas A&M University and the JEOL 4000EX 400kV TEM at Arizona State University.
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