Relevant bibliographies by topics / Interfacial defect

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  1. Dissertations / Theses

Academic literature on the topic 'Interfacial defect'

Author: Grafiati
Published: 25 May 2024

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Dissertations / Theses on the topic "Interfacial defect"

1

Augustine, Anusree. "Swelling induced debonding of thin hydrogel films grafted on silicon substrate : the role of interface physical-chemistry." Electronic Thesis or Diss., Université Paris sciences et lettres, 2022. http://www.theses.fr/2022UPSLS040.

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Les revêtements d'hydrogel sont des réseaux de polymères transparents et hydrophiles capables d’abosrber plusieurs fois leur épaisseur en eau. Cependant, les contraintes induites par le gonflement du film peuvent entraîner un décollement préjudiciable de l'hydrogel ce qui peut limiter l’utilisation pratique des ces revêtements. Dans cette étude, nous proposons de décrire les mécanismes de décollement de films minces d’hydrogel en fonction de leur densité de greffage à l'interface film/substrat. Le but est de pouvoir contrôler et prédire la dégradation des revêtements hydrogel pendant le gonfle
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2

Hariharan, Avinash [Verfasser], Gunther [Gutachter] Eggeler, and Dierk [Gutachter] Raabe. "On the interfacial defect formation mechanism during laser additive manufactering of polycrystalline superalloys / Avinash Hariharan ; Gutachter: Gunther Eggeler, Dierk Raabe ; Fakultät für Maschinenbau." Bochum : Ruhr-Universität Bochum, 2020. http://d-nb.info/1204258333/34.

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3

Pitthan, Filho Eduardo. "Investigação de defeitos e de métodos passivadores da região interfacial SiO2/SiC." reponame:Biblioteca Digital de Teses e Dissertações da UFRGS, 2017. http://hdl.handle.net/10183/156795.

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O carbeto de silício (SiC) é um semicondutor com propriedades adequadas para substituir o silício em dispositivos eletrônicos em aplicações que exijam alta potência, alta frequência e/ou alta temperatura. Além disso, é possível crescer termicamente um filme de dióxido de silício (SiO2) sobre o SiC de maneira análoga ao silício. Porém, esses filmes apresentam maior densidade de defeitos eletricamente ativos na região interfacial SiO2/SiC que no caso do SiO2/Si, o que limita a qualidade dos dispositivos formados. Assim, compreender a origem da degradação elétrica e desenvolver métodos para passi
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4

Guttman, Jeremy. "Polymer-based Tunnel Diodes Fabricated using Ultra-thin, ALD Deposited, Interfacial Films." The Ohio State University, 2016. http://rave.ohiolink.edu/etdc/view?acc_num=osu1469125487.

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5

McAuley, Nigel Anthony. "A study of interfacial defects in hexagonal based bicrystals." Thesis, University of Liverpool, 1988. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.235507.

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6

Kamal, Alm Hajer. "Interfacial Adhesion Failure : Impact on print-coating surface defects." Doctoral thesis, KTH, Fiber- och polymerteknologi, 2016. http://urn.kb.se/resolve?urn=urn:nbn:se:kth:diva-194166.

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The aim of this work was to develop a solid knowledge on formulation effects controlling offset ink-paper coating adhesion and to identify key factors of the coating and printing process affecting it. Focus lay on comprehending the impact of pigment dispersant on ink-paper coating adhesion and ultimately on the print quality of offset prints. The work covers laboratory studies, a pilot coating trial designed to produce coated material with a span in surface chemistry and structure, and an industrial offset printing trial. The lab scale studies quantified ink-paper coating adhesion failure duri
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7

Casey, Siobhan. "A study of interfacial defects in semiconductor materials and metals." Thesis, University of Liverpool, 1993. http://ethos.bl.uk/OrderDetails.do?uin=uk.bl.ethos.240588.

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8

Besson, Rémy. "Simulation à l'échelle atomique de quelques propriétés volumiques et interfaciales d'alliages ordonnés fer-aluminium." Grenoble INPG, 1997. http://www.theses.fr/1997INPG4201.

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Apres avoir elabore un potentiel semi-empirique adapte aux alliages fe - al de structures b2 et d0#3, nous avons etudie les defauts ponctuels et les joints de grains dans ces composes. A basse temperature, l'ecart a la stchiometrie b2 est accommode par des defauts d'antisite ; a plus haute temperature, des lacunes de fer apparaissent et les defauts tendent a former des complexes dont la structure est tres sensible a l'ecart a la stchiometrie. Nos calculs, reposant sur les energies de formation a temperature nulle, indiquent les types des defauts predominants, mais conduisent a des predictions
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9

Adamczyk, Leslie Ann. "Understanding the Structure and Properties of Self-Assembled Monolayers for Interfacial Patterning." Diss., Virginia Tech, 2009. http://hdl.handle.net/10919/28018.

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This dissertation describes the impact of defects on monolayer properties for self-assembled monolayers (SAMs) created by interfacial patterning methods. When forming a two-dimensional interfacial pattern with n-alkanethiols on gold, the desired electrochemical properties are those of a homogeneous, solution adsorbed monolayer. However, even well-ordered SAMs contain a small degree of defects, especially at domain boundaries where two nucleating domains converge. Patterning a surface creates user-defined domain boundaries within the monolayer, potentially having a significant impact on the pro
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10

Chen, Jhewn-Kuang. "The role of defects during precipitate growth in a Ni-45wt% Cr alloy." Diss., This resource online, 1995. http://scholar.lib.vt.edu/theses/available/etd-06062008-162241/.

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