Academic literature on the topic 'International technology roadmap for semiconductors (ITRS)'
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Journal articles on the topic "International technology roadmap for semiconductors (ITRS)"
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Radamson, Henry H., Huilong Zhu, Zhenhua Wu, Xiaobin He, Hongxiao Lin, Jinbiao Liu, Jinjuan Xiang, et al. "State of the Art and Future Perspectives in Advanced CMOS Technology." Nanomaterials 10, no. 8 (August 7, 2020): 1555. http://dx.doi.org/10.3390/nano10081555.
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The international technology roadmap of semiconductors (ITRS) is approaching the historical end point and we observe that the semiconductor industry is driving complementary metal oxide semiconductor (CMOS) further towards unknown zones. Today’s transistors with 3D structure and integrated advanced strain engineering differ radically from the original planar 2D ones due to the scaling down of the gate and source/drain regions according to Moore’s law. This article presents a review of new architectures, simulation methods, and process technology for nano-scale transistors on the approach to the end of ITRS technology. The discussions cover innovative methods, challenges and difficulties in device processing, as well as new metrology techniques that may appear in the near future.
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ZEITZOFF, PETER M., JAMES A. HUTCHBY, and HOWARD R. HUFF. "MOSFET AND FRONT-END PROCESS INTEGRATION: SCALING TRENDS, CHALLENGES, AND POTENTIAL SOLUTIONS THROUGH THE END OF THE ROADMAP." International Journal of High Speed Electronics and Systems 12, no. 02 (June 2002): 267–93. http://dx.doi.org/10.1142/s0129156402001241.
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The development of advanced MOSFETs for future IC technology generations is discussed from the perspective of the 2001 International Technology Roadmap for Semiconductors (ITRS). Starting from overall chip circuit requirements, MOSFET and front-end process integration technology requirements and scaling trends are discussed, as well as some of the key challenges and potential solutions. These include the use of high-k gate dielectrics, metal-gate electrodes, and perhaps the use of non-classical devices such as double-gate MOSFETs in the later stages of the ITRS.
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Radamson, Henry H., Xiaobin He, Qingzhu Zhang, Jinbiao Liu, Hushan Cui, Jinjuan Xiang, Zhenzhen Kong, et al. "Miniaturization of CMOS." Micromachines 10, no. 5 (April 30, 2019): 293. http://dx.doi.org/10.3390/mi10050293.
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When the international technology roadmap of semiconductors (ITRS) started almost five decades ago, the metal oxide effect transistor (MOSFET) as units in integrated circuits (IC) continuously miniaturized. The transistor structure has radically changed from its original planar 2D architecture to today’s 3D Fin field-effect transistors (FinFETs) along with new designs for gate and source/drain regions and applying strain engineering. This article presents how the MOSFET structure and process have been changed (or modified) to follow the More Moore strategy. A focus has been on methodologies, challenges, and difficulties when ITRS approaches the end. The discussions extend to new channel materials beyond the Moore era.
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F. Roslan, Ameer, F. Salehuddin, A. S. M.Zain, K. E. Kaharudin, H. Hazura, A. R. Hanim, S. K. Idris, B. Z. Zarina, and Afifah Maheran A.H. "3D Double Gate FinFET Construction of 30 nm Technology Node Impact Towards Short Channel Effect." Indonesian Journal of Electrical Engineering and Computer Science 12, no. 3 (December 1, 2018): 1358. http://dx.doi.org/10.11591/ijeecs.v12.i3.pp1358-1365.
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<p>This paper presents an investigation on properties of Double Gate FinFET (DGFinFET) and impact of physical properties of FinFET towards short channel effects (SCEs) for 30 nm device, where depletion-layer widths of the source-drain corresponds to the channel length aside from constant fin height (HFIN) and the fin thickness (TFIN). Virtual fabrication process of 3-dimensional (3D) design is applied throughout the study and its electrical characterization is employed and substantial is shown towards the FinFET design whereby in terms of the ratio of drive current against the leakage current (ION/IOFF ratio) at 563138.35 compared to prediction made by the International Technology Roadmap Semiconductor (ITRS) 2013. Conclusively, the incremental in ratio has fulfilled the desired in incremental on the drive current as well as reductions of the leakage current. Threshold voltage (VTH) meanwhile has also achieved the nominal requirement predicted by the International Technology Roadmap Semiconductor (ITRS) 2013 for which is at 0.676±12.7% V. The ION , IOFF and VTH obtained from the device has proved to meet the minimum requirement by ITRS 2013 for low performance Multi-Gate technology.</p>
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Kraus, W., and D. Schmitt-Landsiedel. "Influence of gate tunneling currents on switched capacitor integrators." Advances in Radio Science 7 (May 19, 2009): 225–29. http://dx.doi.org/10.5194/ars-7-225-2009.
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Abstract. In order to achieve a higher level of integration in modern VLSI systems, not only the lateral geometrical dimensions have to be scaled. Lowering the supply voltage also requires scaling down the oxide thickness of the transistors. While the oxide thickness is scaled down proportionally with the supply voltage, the gate tunneling currents grow exponentially, which results in special issues concerning deviations in charge based analog and mixed signal circuitry. The influence of gate tunneling currents on this kind of circuits will be demonstrated at a fully differential switched capacitor integrator. The used process data is derived from the International Technology Roadmap for Semiconductors (ITRS Roadmap, 2006). The Parameter sets for the simulations are based on the Predictive Technology Model of the Arizona State University Modelling Group for the 65 nm Technology node (Predictive Technology Model, 2008).
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Xu, K., S. Pichler, Kurt Wostyn, G. Cado, C. Springer, Glenn W. Gale, Michael Dalmer, et al. "Removal of Nano-Particles by Aerosol Spray: Effect of Droplet Size and Velocity on Cleaning Performance." Solid State Phenomena 145-146 (January 2009): 31–34. http://dx.doi.org/10.4028/www.scientific.net/ssp.145-146.31.
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As the dimensions of the structures of integrated circuits shrink, the influence of particles on device yield becomes increasingly important. According to the cleaning requirements of the International Technology Roadmap for Semiconductors (ITRS) in 2007, particles of 32 nm and larger are believed to be detrimental to devices and thus have to be removed. To remove nano-particles with minimal substrate loss and no damage requires very dilute chemistries and sufficiently gentle physical forces in a cleaning process. In this work the performance of an aerosol spray based cleaning technique is evaluated with regard to the removal efficiency of nano-particles as well as substrate loss and structural damage.
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Heyns, M., and W. Tsai. "Ultimate Scaling of CMOS Logic Devices with Ge and III–V Materials." MRS Bulletin 34, no. 7 (July 2009): 485–92. http://dx.doi.org/10.1557/mrs2009.136.
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AbstractOver the years, many new materials have been introduced in advanced complementary metal oxide semiconductor (CMOS) processes in order to continue the trend of reducing the gate length and increasing the performance of CMOS devices. This is clearly evidenced in the International Technology Roadmap for Semiconductors (ITRS), which indicates the requirements and technological challenges in the microelectronics industry in various technology nodes. Every new technology node, characterized by the minimal device dimensions that are used, has required innovations in new materials and transistor design. The introduction of deposited high-κ gate dielectrics and metal gates as replacements for the thermally grown SiO2 and poly-Si electrode was a major challenge that has been met in the transition toward the 32 nm technology node since it replaced the heart of the metal oxide semiconductor structure. For the next generation of technology nodes, even bigger hurdles will need to be overcome, since new device structures and high-mobility channel materials such as Ge and III–V compounds might be needed, according to the ITRS roadmap, to meet the power and performance specifications of the 16 nm CMOS node and beyond. The basic properties of these high-mobility channel materials and their impact on the device performance have to be fully understood to allow process integration and full-scale manufacturing. In addition to thermal stability, compatibility with other materials, electronic transport properties, and especially the passivation of electronically active defects at the interface with a high-κ dielectric, are enormous challenges. Many encouraging results have been obtained, but the stringent demands in terms of electrical performance and oxide thickness scaling needed for highly scaled CMOS devices are not yet fully met. Other areas where breakthroughs will be needed are the formation of low-resistivity contacts, especially on III–V materials, and III–V materials suited for pMOS channels. An overview of the major successes and remaining critical issues in the materials research on high-mobility channel materials for advanced CMOS devices is given in this issue of MRS Bulletin.
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Wilson, Peter R., Braham Ferreira, Jing Zhang, and Christina DiMarino. "IEEE ITRW: International Technology Roadmap for Wide-Bandgap Power Semiconductors: An Overview." IEEE Power Electronics Magazine 5, no. 2 (June 2018): 22–25. http://dx.doi.org/10.1109/mpel.2018.2821938.
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Kang, Yuhao, Walter Den, Hsunling Bai, and Fu-Hsiang Ko. "Surface Deposition of Diethyl Phthalate on SiO2 and Si3N4 Wafers in Simulated Cleanroom Environment." Journal of the IEST 48, no. 1 (September 1, 2005): 21–32. http://dx.doi.org/10.17764/jiet.48.1.f2l1547q134n506t.
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The surface deposition kinetics of airborne diethyl phthalate (DEP), a representative compound for high-boiling-point organic contaminants in cleanroom environments, were investigated in this study. Between the two types of wafer surfaces evaluated, wafer surfaces with oxide (SiO2) and wafer surfaces with nitride (Si3N4), DEP exhibited a stronger propensity to absorb on the SiO2 wafers, presumably due to the greater dipole moment between DEP and SiO2 surfaces. Under well-controlled exposure conditions, the rate parameters of a theoretical surface kinetic model were determined by employing a heuristic algorithm for numerical optimization to match the experimental profile. Subsequently, a series of time-dependent surface DEP concentrations were simulated and validated with the experimental data under various ambient concentrations. Estimation of the allowable wafer exposure durations and the maximum ambient concentrations were exemplified based on the guideline recommended by the International Technology Roadmap for Semiconductors (ITRS).1
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Leela Rani, V., and M. Madhavi Latha. "Particle Swarm Optimization Algorithm for Leakage Power Reduction in VLSI Circuits." International Journal of Electronics and Telecommunications 62, no. 2 (June 1, 2016): 179–86. http://dx.doi.org/10.1515/eletel-2016-0025.
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Abstract Leakage power is the dominant source of power dissipation in nanometer technology. As per the International Technology Roadmap for Semiconductors (ITRS) static power dominates dynamic power with the advancement in technology. One of the well-known techniques used for leakage reduction is Input Vector Control (IVC). Due to stacking effect in IVC, it gives less leakage for the Minimum Leakage Vector (MLV) applied at inputs of test circuit. This paper introduces Particle Swarm Optimization (PSO) algorithm to the field of VLSI to find minimum leakage vector. Another optimization algorithm called Genetic algorithm (GA) is also implemented to search MLV and compared with PSO in terms of number of iterations. The proposed approach is validated by simulating few test circuits. Both GA and PSO algorithms are implemented in Verilog HDL and the simulations are carried out using Xilinx 9.2i. From the simulation results it is found that PSO based approach is best in finding MLV compared to Genetic based implementation as PSO technique uses less runtime compared to GA. To the best of the author’s knowledge PSO algorithm is used in IVC technique to optimize power for the first time and it is quite successful in searching MLV.
Dissertations / Theses on the topic "International technology roadmap for semiconductors (ITRS)"
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Rosenbaum, Tommy. "Performance prediction of a future silicon-germanium heterojunction bipolar transistor technology using a heterogeneous set of simulation tools and approaches." Thesis, Bordeaux, 2017. http://www.theses.fr/2017BORD0550/document.
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Les procédés bipolaires semi-conducteurs complémentaires à oxyde de métal (BiCMOS) peuvent être considérés comme étant la solution la plus généralepour les produits RF car ils combinent la fabrication sophistiquée du CMOSavec la vitesse et les capacités de conduction des transistors bipolaires silicium germanium(SiGe) à hétérojonction (HBT). Les HBTs, réciproquement, sontles principaux concurrents pour combler partiellement l'écart de térahertzqui décrit la plage dans laquelle les fréquences générées par les transistors etles lasers ne se chevauchent pas (environ 0.3 THz à 30 THz). A_n d'évaluerles capacités de ces dispositifs futurs, une méthodologie de prévision fiable estsouhaitable. L'utilisation d'un ensemble hétérogène d'outils et de méthodes desimulations permet d'atteindre successivement cet objectif et est avantageusepour la résolution des problèmes. Plusieurs domaines scientifiques sont combinés, tel que la technologie de conception assistée par ordinateur (TCAO),la modélisation compacte et l'extraction des paramètres.Afin de créer une base pour l'environnement de simulation et d'améliorerla confirmabilité pour les lecteurs, les modèles de matériaux utilisés pour lesapproches hydrodynamiques et de diffusion par conduction sont introduits dèsle début de la thèse. Les modèles physiques sont principalement fondés surdes données de la littérature basées sur simulations Monte Carlo (MC) ou dessimulations déterministes de l'équation de transport de Boltzmann (BTE).Néanmoins, le module de TCAO doit être aussi étalonné sur les données demesure pour une prévision fiable des performances des HBTs. L'approchecorrespondante d'étalonnage est basée sur les mesures d'une technologie depointe de HBT SiGe pour laquelle un ensemble de paramètres spécifiques àla technologie du modèle compact HICUM/L2 est extrait pour les versionsdu transistor à haute vitesse, moyenne et haute tension. En s'aidant de cesrésultats, les caractéristiques du transistor unidimensionnel qui sont généréesservent de référence pour le profil de dopage et l'étalonnage du modèle. Enélaborant des comparaisons entre les données de références basées sur les mesureset les simulations, la thèse fait progresser l'état actuel des prévisionsbasées sur la technologie CAO et démontre la faisabilité de l'approche.Enfin, une technologie future de 28nm performante est prédite en appliquantla méthodologie hétérogène. Sur la base des résultats de TCAO, leslimites de la technologie sont soulignéesBipolar complementary metal-oxide-semiconductor (BiCMOS) processescan be considered as the most general solution for RF products, as theycombine the mature manufacturing tools of CMOS with the speed and drivecapabilities of silicon-germanium (SiGe) heterojunction bipolar transistors(HBTs). HBTs in turn are major contenders for partially filling the terahertzgap, which describes the range in which the frequencies generated bytransistors and lasers do not overlap (approximately 0.3THz to 30 THz). Toevaluate the capabilities of such future devices, a reliable prediction methodologyis desirable. Using a heterogeneous set of simulation tools and approachesallows to achieve this goal successively and is beneficial for troubleshooting.Various scientific fields are combined, such as technology computer-aided design(TCAD), compact modeling and parameter extraction.To create a foundation for the simulation environment and to ensure reproducibility,the used material models of the hydrodynamic and drift-diffusionapproaches are introduced in the beginning of this thesis. The physical modelsare mainly based on literature data of Monte Carlo (MC) or deterministicsimulations of the Boltzmann transport equation (BTE). However, the TCADdeck must be calibrated on measurement data too for a reliable performanceprediction of HBTs. The corresponding calibration approach is based onmeasurements of an advanced SiGe HBT technology for which a technology specific parameter set of the HICUM/L2 compact model is extracted for thehigh-speed, medium-voltage and high-voltage transistor versions. With thehelp of the results, one-dimensional transistor characteristics are generatedthat serve as reference for the doping profile and model calibration. By performingelaborate comparisons between measurement-based reference dataand simulations, the thesis advances the state-of-the-art of TCAD-based predictionsand proofs the feasibility of the approach.Finally, the performance of a future technology in 28nm is predicted byapplying the heterogeneous methodology. On the basis of the TCAD results,bottlenecks of the technology are identified
Bipolare komplementäre Metall-Oxid-Halbleiter (BiCMOS) Prozesse bietenhervorragende Rahmenbedingungen um Hochfrequenzanwendungen zurealisieren, da sie die fortschrittliche Fertigungstechnik von CMOS mit derGeschwindigkeit und Treiberleistung von Silizium-Germanium (SiGe) Heterostruktur-Bipolartransistoren (HBTs) verknüpfen. Zudem sind HBTs bedeutendeWettbewerber für die teilweise Überbrückung der Terahertz-Lücke, derFrequenzbereich zwischen Transistoren (< 0.3 THz) und Lasern (> 30 THz).Um die Leistungsfähigkeit solcher zukünftigen Bauelemente zu bewerten, isteine zuverlässige Methodologie zur Vorhersage notwendig. Die Verwendungeiner heterogenen Zusammenstellung von Simulationstools und Lösungsansätzenerlaubt es dieses Ziel schrittweise zu erreichen und erleichtert die Fehler-_ndung. Verschiedene wissenschaftliche Bereiche werden kombiniert, wie zumBeispiel der rechnergestützte Entwurf für Technologie (TCAD), die Kompaktmodellierungund Parameterextraktion.Die verwendeten Modelle des hydrodynamischen Simulationsansatzes werdenzu Beginn der Arbeit vorgestellt, um die Simulationseinstellung zu erläuternund somit die Nachvollziehbarkeit für den Leser zu verbessern. Die physikalischenModelle basieren hauptsächlich auf Literaturdaten von Monte Carlo(MC) oder deterministischen Simulationen der Boltzmann-Transportgleichung(BTE). Für eine zuverlässige Vorhersage der Eigenschaften von HBTs muss dieTCAD Kon_guration jedoch zusätzlich auf der Grundlage von Messdaten kalibriertwerden. Der zugehörige Ansatz zur Kalibrierung beruht auf Messungeneiner fortschrittlichen SiGe HBT Technologie, für welche ein technologiespezifischer HICUM/L2 Parametersatz für die high-speed, medium-voltage undhigh-voltage Transistoren extrahiert wird. Mit diesen Ergebnissen werden eindimensionaleTransistorcharakteristiken generiert, die als Referenzdaten fürdie Kalibrierung von Dotierungspro_len und physikalischer Modelle genutztwerden. Der ausführliche Vergleich dieser Referenz- und Messdaten mit Simulationengeht über den Stand der Technik TCAD-basierender Vorhersagenhinaus und weist die Machbarkeit des heterogenen Ansatzes nach.Schlieÿlich wird die Leistungsfähigkeit einer zukünftigen Technologie in28nm unter Anwendung der heterogenen Methodik vorhergesagt. Anhand derTCAD Ergebnisse wird auf Engpässe der Technologie hingewiesen
Book chapters on the topic "International technology roadmap for semiconductors (ITRS)"
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Hoefflinger, Bernd. "ITRS: The International Technology Roadmap for Semiconductors." In The Frontiers Collection, 161–74. Berlin, Heidelberg: Springer Berlin Heidelberg, 2011. http://dx.doi.org/10.1007/978-3-642-23096-7_7.
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Hoefflinger, Bernd. "ITRS 2028—International Roadmap of Semiconductors." In The Frontiers Collection, 143–48. Cham: Springer International Publishing, 2015. http://dx.doi.org/10.1007/978-3-319-22093-2_7.
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Vargas-Bernal, Rafael, Gabriel Herrera-Pérez, and Margarita Tecpoyotl-Torres. "The Impact of Carbon Nanotubes and Graphene on Electronics Industry." In Encyclopedia of Information Science and Technology, Fourth Edition, 2897–907. IGI Global, 2018. http://dx.doi.org/10.4018/978-1-5225-2255-3.ch253.
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Since its discovery in 1991 and 2004, carbon nanotubes (CNTs) by Sumio Iijima, and graphene by Andre Geim and Konstantin Novoselov in 2004, these materials have been extensively studied around the world. Both materials have electronic, thermal, magnetic, optical, chemical, and mechanical extraordinary properties. International Technology Roadmap for Semiconductors (ITRS) has predicted that these nanomaterials are potential replacements of the conventional materials used in the manufacture of integrated circuits. Two of the technological aspects that both materials share and have reduced their extensive use are processing and dispersion required to homogenize the electrical properties of the materials based on them. Fortunately, these problems are being solved thanks to the ongoing investigation, and in a short time the materials used in today's electronics industry will be replaced by devices based on these novel materials. The impact of the applications of both materials in the electronics industry, as well as future trends in the following decades are discussed in this paper.
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Vargas-Bernal, Rafael, Gabriel Herrera-Pérez, and Margarita Tecpoyotl-Torres. "The Impact of Carbon Nanotubes and Graphene on Electronics Industry." In Advances in Marketing, Customer Relationship Management, and E-Services, 382–94. IGI Global, 2019. http://dx.doi.org/10.4018/978-1-5225-7766-9.ch030.
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Since their discovery in 1991, carbon nanotubes (CNTs), by Sumio Iijima, and graphene, by Andre Geim and Konstantin Novoselov in 2004, have been extensively studied around the world. Both materials have electronic, thermal, magnetic, optical, chemical, and mechanical extraordinary properties. International technology roadmap for semiconductors (ITRS) has predicted that these nanomaterials are potential replacements of the conventional materials used in the manufacturing of integrated circuits. Two of the technological aspects that both materials share and have reduced their extensive use are processing and dispersion required to homogenize the electrical properties of the materials based on them. Fortunately, these problems are being solved thanks to the ongoing investigation, and in a short time the materials used in today's electronics industry will be replaced by devices based on these novel materials. The impact of the applications of both materials in the electronics industry as well as future trends in the following decades are discussed in this chapter.
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Simpson, Michael L., and Gary S. Sayler. "The Device Science of Whole Cells as Components in Microscale and Nanoscale Systems." In Cellular Computing. Oxford University Press, 2004. http://dx.doi.org/10.1093/oso/9780195155396.003.0009.
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Intact whole cells may be the ultimate functional molecular-scale machines, and our ability to manipulate the genetic mechanisms that control these functions is relatively advanced when compared to our ability to control the synthesis and direct the assembly of man-made materials into systems of comparable complexity and functional density. Although engineered whole cells deployed in biosensor systems provide one of the practical successes of molecular-scale devices, these devices explore only a small portion of the full functionality of the cells. Individual or self-organized groups of cells exhibit extremely complex functionality that includes sensing, communication, navigation, cooperation, and even fabrication of synthetic nanoscopic materials. Adding this functionality to engineered systems provides motivation for deploying whole cells as components in microscale and nanoscale devices. In this chapter we focus on the device science of whole cell components in a way analogous to the device physics of semiconductor components. We consider engineering the information transport within and between cells, communication between cells and synthetic devices, the integration of cells into nanostructured and microstructured substrates to form highly functional systems, and modeling and simulation of information processing in cells. Even a casual examination of the information processing density of prokaryotic cells produces an appreciation for the advanced state of the cell’s capabilities. A bacterial cell such as Escherichia coli ( 2 μm2 cross-sectional area) with a 4.6 million basepair chromosome has the equivalent of a 9.2-megabit memory. This memory codes for as many as 4300 different polypeptides under the inducible control of several hundred different promoters. These polypeptides perform metabolic and regulatory functions that process the energy and information, respectively, made available to the cell. This complexity of functionality allows the cell to interact with, influence, and, to some degree, control its environment. Compare this to the silicon semiconductor situation as described in the International Technology Roadmap for Semiconductors (ITRS). ITRS predicts that by the year 2014, memory density will reach 24.5 Gbits/cm2, and logic transistor density will reach 664 M/cm2. Assuming four transistors per logic function, 2 μm2 of silicon could contain a 490-bit memory or approximately three simple logic gates.
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Praveenkumar, Padmapriya, Santhiya Devi R., Amirtharajan Rengarajan, and John Bosco Balaguru Rayappan. "LFSR-Keyed MUX for Random Number Generation in Nano Communication Using QCA." In Quantum Cryptography and the Future of Cyber Security, 70–83. IGI Global, 2020. http://dx.doi.org/10.4018/978-1-7998-2253-0.ch004.
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Nano industries have been successful trendsetters for the past 30 years, in escalating the speed and dropping the power necessities of nanoelectronic devices. According to Moore's law and the assessment created by the international technology roadmap for semiconductors, beyond 2020, there will be considerable restrictions in manufacturing IC's based on CMOS technologies. As a result, the next prototype to get over these effects is quantum-dot cellular automata (QCA). In this chapter, an efficient quantum cellular automata (QCA) based random number generator (RNG) is proposed. QCA is an innovative technology in the nano regime which guarantees large device density, less power dissipation, and minimal size as compared to the various CMOS technologies. With the aim to maximise the randomness in the proposed nano communication, a linear feedback shift register (LFSR) keyed multiplexer with ring oscillators is developed. The developed RNG is simulated using a quantum cellular automata (QCA) simulator tool.
Conference papers on the topic "International technology roadmap for semiconductors (ITRS)"
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Jeong, Kwangok, and Andrew B. Kahng. "A power-constrained MPU roadmap for the International Technology Roadmap for Semiconductors (ITRS)." In 2009 International SoC Design Conference (ISOCC). IEEE, 2009. http://dx.doi.org/10.1109/socdc.2009.5423856.
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Qu, Yan, Ekachai Puttitwong, John R. Howell, Ofodike A. Ezekoye, and Kenneth S. Ball. "Drawdown-Effect of Lightpipes in Silicon Wafer Surface Temperature Measurements." In ASME 2005 Summer Heat Transfer Conference collocated with the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems. ASMEDC, 2005. http://dx.doi.org/10.1115/ht2005-72203.
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Lightpipe radiation thermometers (LPRTs) have been widely used for temperature measurement in the semiconductor industries. According to the International Technology Roadmap for Semiconductors 2004 (ITRS), temperatures for semiconductor wafer processing should be measurable to within an uncertainty of ± 1.5°C at 1,000 °C with temperature calibration traceable to ITS (international temperature standard)-90. To achieve this uncertainty, there are several issues associated with LPRTs to be resolved. The “draw-down effect” is the one that will be examined in this paper. We discuss this effect both experimentally and numerically in the temperature range of 500°C to 900°C.
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Carballo, Juan-Antonio, Wei-Ting Jonas Chan, Paolo A. Gargini, Andrew B. Kahng, and Siddhartha Nath. "ITRS 2.0: Toward a re-framing of the Semiconductor Technology Roadmap." In 2014 32nd IEEE International Conference on Computer Design (ICCD). IEEE, 2014. http://dx.doi.org/10.1109/iccd.2014.6974673.
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Tricard, Marc, Paul R. Dumas, Don Golini, and James T. Mooney. "Prime Silicon and Silicon-on-Insulator (SOI) Wafer Polishing With Magnetorheological Finishing (MRF)." In ASME 2003 International Mechanical Engineering Congress and Exposition. ASMEDC, 2003. http://dx.doi.org/10.1115/imece2003-42149.
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The December 2001 [1, 2] edition of the International Technology Roadmap for Semiconductors [3] (ITRS-2001) identifies several challenges for the manufacturing of silicon and silicon-on-insulator (SOI) wafers. For silicon, edge exclusion, site flatness and nanotopography1 requirements will become extremely challenging. For SOI, requirements for the control of the top silicon layer and its associated uniformity are pushing the limits of metrology. Keeping ± 5% tolerances on thicknesses, gradually decreasing from more than 100nm to less than 20nm for partially depleted devices (let alone from 30 to 3nm for fully depleted devices) is exceeding the capabilities of traditional chemo-mechanical-polishing (CMP) processes [5]. This paper will briefly describe magnetorheological finishing (MRF) and its suitability for prime silicon and SOI wafer polishing. Particular emphasis will be placed on MRF’s ability to improve the global flatness and the total thickness variation (TTV) on prime silicon wafers, and to reduce the nominal thickness of the top silicon layer, while improving thickness uniformity on SOI wafers. The paper will also touch upon the process qualification issues associated with the tight requirements of the semiconductor industry.
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Kane, Terence, Michael P. Tenney, and John Bruley. "Characterization of Sub 130 Nanometer Gate Length SOI MOSFET Devices Exhibiting Short Channel Effects." In ISTFA 2003. ASM International, 2003. http://dx.doi.org/10.31399/asm.cp.istfa2003p0478.
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Abstract As MOSFET device gate lengths shrink below the 130 nanometer node, the effects of short channel effects (SCE) and gate line edge roughness (LER) have an increasingly more pronounced affect on device performance [1-8, 10]. The 2001 International Technology Roadmap for Semiconductors (ITRS) predicts increasingly tighter critical dimensions (CD) control limits on LER from 2.7 nm in 2004 to 1.3 nm in 2010 [9,11]. As gate lengths shrink, resist etch processes emerge as the most significant contributor to LER [1-8, 11]. In addition, another contributing factor to SCE is junction implant defects. Examples of gate LER effects and junction defects in 130 nanometer node SOI SRAM MOSFET devices identified by sub-micron electrical characterization with analysis by high resolution transmission electron microscopy (TEM) are discussed.
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Kacker, Karan, George Lo, and Suresh K. Sitaraman. "Wafer-Level, Compliant, Off-Chip Interconnects for Next-Generation Low-K Dielectric/Cu IC’s." In ASME 2006 International Mechanical Engineering Congress and Exposition. ASMEDC, 2006. http://dx.doi.org/10.1115/imece2006-16014.
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Demand for off-chip bandwidth has continued to increase. It is projected by the Semiconductor Industry Association in their International Technology Roadmap for Semiconductors (ITRS) that by the year 2015, the chip-to-substrate area-array input-output interconnects will require a pitch of 70 μm. Compliant off-chip interconnects show great potential to address these needs. G-Helix is a lithography-based electroplated compliant interconnect that can be fabricated at the wafer level. G-Helix interconnects exhibit excellent compliance in all three orthogonal directions, and can accommodate the CTE mismatch between the silicon die and the organic substrate without requiring an underfill. Also, these compliant interconnect are less likely to crack or delaminate the low-K dielectric material in current and future ICs. The interconnects are also potentially cost effective as they can be fabricated using conventional wafer fabrication infrastructure. In this paper we present an integrative approach which uses interconnects with varying compliance and thus varying electrical preformance from the center to the edge of the die. Using such a varying geometry from the center to the edge of the die, the system performance can be tailored by balancing electrical requirements against thermo-mechanical reliability concerns. We also discuss the reliability assessment results of helix interconnects assembled on an organic substrate. Results from mechanical characterization experiments are also presented.
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Gee, Stephen, Nikhil Kelkar, Joanne Huang, and King-Ning Tu. "Lead-Free and PbSn Bump Electromigration Testing." In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73417.
Full textAbstract:
As the electronics industry continues to push for miniaturization, several reliability factors become vital issues. The demand for a high population of smaller and smaller solder bumps, while also increasing the current, have resulted in a significant increase in the current density. As outlined in the International Technology of Roadmap for Semiconductors (ITRS), this trend makes electromigration the limiting factor in high density packages. The heightened current density and correspondingly elevated operating temperatures are a critical issue in reliability since these factors facilitate the effects of electromigration. Therefore, as bump sizes continue to decrease, the study of electromigration reliability becomes crucial in order to understand and possibly prevent the causes of failure. A systematic study of electromigration in eutectic SnPb and Pb-free solder bumps was conducted in order to characterize the reliability of the Micro SMD package family. The testing includes both eutectic 63Sn-37Pb and 95.5Sn4.0Ag-0.5Cu solder bumps on an Al/Ni(V)/Cu under-bump-metallization. Mean-time-to-failure results are compared to Black’s Equation and cross-sections of the solder bumps are shown to analyze the mechanisms that led to failure.
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Suman, Shivesh K., Andrei G. Fedorov, and Yogendra K. Joshi. "Thermodynamic Design of Compact Thermal Compressor for Sorption Assisted Cryogenic Cooling of Electronics." In ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems collocated with the ASME 2005 Heat Transfer Summer Conference. ASMEDC, 2005. http://dx.doi.org/10.1115/ipack2005-73452.
Full textAbstract:
During the past several decades, significant performance improvement of microprocessor chips has been obtained mainly by reduction of (transistor) device length scale. Beyond the International Technology Roadmap for Semiconductors (ITRS)-defined 50 nm technology node, the parasitic effects associated with reduction of the feature size (e.g., increase in leakage current) begin to outweigh the favorable effects of increased functionality and speed. One promising route for continued performance improvement is to exploit low temperature operation of microprocessors (also referred to as the temperature scaling [1]). This calls for development of compact, inexpensive, and quiet refrigeration/cryogenics technology, which can be interfaced with electronic components. In this work, we consider thermally driven sorption-assisted refrigeration technology for sub-ambient cooling of high performance electronics. In the past, sorption-based cryocoolers have been successfully developed for cryogenic cooling of sensors in space applications, targeting very low (mW-level) cooling loads. These cryocoolers are quiet, vibration free, reliable since they have no moving parts at high pressure, and therefore offer significant advantages over mechanical refrigeration. In addition, there is no refrigerant-lubricant interaction in sorption-based cryocoolers, which can potentially degrade the evaporator performance. This paper presents a thermodynamics-based analytical framework for the design of sorption compressors for cryogenic cooling of electronics. A sample case study is also presented to illustrate the approach.
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Ma, Lunyu, Qi Zhu, and Suresh K. Sitaraman. "Mechanical and Electrical Study of Linear Spring and J-Spring." In ASME 2002 International Mechanical Engineering Congress and Exposition. ASMEDC, 2002. http://dx.doi.org/10.1115/imece2002-39683.
Full textAbstract:
The integrated circuit (IC) fabrication technology continues to push the limits of microelectronics packaging technologies. Today millions of transistors can be fabricated in a chip of about 1 cm × 1 cm in size, and the required I/O density is about 1600/cm2. Although tremendous advances have been made in die to substrate interconnect technologies as well as substrate/PWB technologies, these advances have not kept pace with advances in semiconductor technology, and therefore, continue to be a bottleneck for further advances in semiconductor technologies. In addition to fabrication constraints, low cost and reliability are other requirements that affect interconnect development. Wafer-level Packaging (WLP) is an effective solution to address some of these issues. A compliant interconnect, called “J-Spring”, has been proposed and developed at Georgia Institute of Technology. Although based on the same concept of inherent stress-gradient used in the linear spring, the J-Spring will provide greater in-plane compliance. These compliant interconnects can be fabricated in batch at wafer level and the pitch can be as low as 30 μm. The fine pitch can meet and exceed the requirements of International Technology Roadmap for Semiconductor (ITRS) for 2011 [ITRS, 2001] and beyond. J-Springs with different radius, angle, width, and release length have been fabricated on a test wafer. Numerical model has been created to determine the release height based on J-Spring geometry and stress gradients. Also, the compliance of J-Spring has been determined in three orthogonal directions using parametric numerical models. The compliance of J-Spring is compared with the compliance of the linear spring. The proposed compliant interconnects can accommodate the differential displacement due to CTE mismatch between the die and the substrate. In addition, to their mechanical characteristics, their electrical characteristics have been studied as well. The electrical characteristics are dependent on the geometry, dimensions and the materials used.
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Klein, Kevin M., and Suresh K. Sitaraman. "Compliant Stress-Engineered Interconnects for Next-Generation Packaging." In ASME 2004 International Mechanical Engineering Congress and Exposition. ASMEDC, 2004. http://dx.doi.org/10.1115/imece2004-61990.
Full textAbstract:
Future demands of microelectronic packing include increasing input/output (I/O) densities, providing high frequency capabilities, and maintaining sufficient reliability while keeping costs minimal. Organic materials with Coefficients of Thermal Expansions (CTE) over four times greater than silicon will continue to be used as future substrate materials because of their low cost. Consistent with the International Technology Roadmap for Semiconductors (ITRS, 2003), chip-to-substrate interconnects will need to have a pitch approximately equal to 40μm by the year 2012 and be able to accommodate the silicon and organic CTE mismatch without resorting to expensive reliability solutions. The demand for fine pitch chip-to-substrate interconnects combined with the CTE mismatch, creates significant demands for overall interconnect compliance as means to ensure reliability, through increasing fatigue life. Stress-engineered compliant off-chip interconnects are capable meeting future interconnect demands. Such interconnects are fabricated from stress-engineered metal thin-films using traditional IC fabrication methods and can be integrated with wafer level packing. A systematic design approach has been used to optimize interconnect geometry for use with estimated operational conditions. Finite Element Analysis (FEA) and Regression modeling have been used to create macro-models of interconnect behavior to assist in the optimization of the geometric design. Copper and Copper-Molybdenum are considered as interconnect material and the development intrinsic stress within copper is investigated via sputter deposition.