Log in

Relevant bibliographies by topics / Intrinsic voltage gain / Journal articles

To see the other types of publications on this topic, follow the link: Intrinsic voltage gain.

Journal articles on the topic 'Intrinsic voltage gain'

Author: Grafiati

Published: 4 June 2021

Last updated: 1 February 2022

Create a spot-on reference in APA, MLA, Chicago, Harvard, and other styles

Select a source type:

Consult the top 50 journal articles for your research on the topic 'Intrinsic voltage gain.'

Next to every source in the list of references, there is an 'Add to bibliography' button. Press on it, and we will generate automatically the bibliographic reference to the chosen work in the citation style you need: APA, MLA, Harvard, Chicago, Vancouver, etc.

You can also download the full text of the academic publication as pdf and read online its abstract whenever available in the metadata.

Browse journal articles on a wide variety of disciplines and organise your bibliography correctly.

1

Buhler, Rudolf T., Renato Giacomini, and João Antonio Martino. "Influence of Fin Shape and Temperature on Conventional and Strained MuGFETs’ Analog Parameters." Journal of Integrated Circuits and Systems 6, no. 2 (2011): 94–101. http://dx.doi.org/10.29292/jics.v6i2.344.

Full text

Abstract:

This work evaluates two important technological variations of Triple-Gate FETs: the use of strained silicon and the occurrence of non-rectangular body cross-section. The anaysis is focused on the electrical parameters for analog applications, and covers a temperature range from 150 K to 400 K. The comparison of the intrinsic voltage gain between the different trapezoidal fin shapes showed that the fin shape can have a major role in some analog parameters than the use of the strained silicon technology, helping to improve those parameters under certain circumstances. The highest intrinsic volta

APA, Harvard, Vancouver, ISO, and other styles

2

Zhang, Nuo, Yi Rao, Nuo Xu, Ayden Maralani, and Albert P. Pisano. "Characterization of 4H-SiC Bipolar Junction Transistor at High Temperatures." Materials Science Forum 778-780 (February 2014): 1013–16. http://dx.doi.org/10.4028/www.scientific.net/msf.778-780.1013.

Full text

Abstract:

In this work, a 4H-Silicon Carbide (SiC) Bipolar Junction Transistor (BJT) capable of operating at high temperatures up to 673 K is demonstrated. Comprehensive characterization including current gain, early voltage, and intrinsic voltage gain was performed. At elevated temperatures, although the current gain of the device is reduced, the intrinsic voltage gain increases to 5900 at 673 K, suggesting 4H-SiC BJT has the potential to be used as a voltage amplifier at extremely high temperatures.

APA, Harvard, Vancouver, ISO, and other styles

3

Rodrigues, Michele, Milene Galeti, Nadine Collaert, Eddy Simoen, Cor Claeys, and João Antonio Martino. "SOI n- and pMuGFET devices with different TiN metal gate thickness and crystallographic orientation of the sidewalls." Journal of Integrated Circuits and Systems 7, no. 2 (2012): 107–12. http://dx.doi.org/10.29292/jics.v7i2.362.

Full text

Abstract:

This work presents an analysis of SOI p- and nMuGFET devices with different TiN metal gate electrode thickness for rotated and standard structures.Thinner TiN metal gate allows achieving a higher intrinsic voltage gain in spite of the reduced variation observed of the gm/IDS characteristics. This effect can be attributed to the increased Early voltage values observed for thinner TiN metal gate. Even with the larger mobility of the rotated nMuGFET devices when compared with the standard ones, the larger output conductance degradation resulted in an almost similar intrinsic voltage gain. P-chann

APA, Harvard, Vancouver, ISO, and other styles

4

Patel, Ameera X., Naomi Murphy, and Denis Burdakov. "Tuning Low-Voltage-Activated A-Current for Silent Gain Modulation." Neural Computation 24, no. 12 (2012): 3181–90. http://dx.doi.org/10.1162/neco_a_00373.

Full text

Abstract:

Modulation of stimulus-response gain and stability of spontaneous (unstimulated) firing are both important for neural computation. However, biologically plausible mechanisms that allow these distinct functional capabilities to coexist in the same neuron are poorly defined. Low-threshold, inactivating (A-type) K+ currents (IA) are found in many biological neurons and are historically known for enabling low-frequency firing. By performing simulations using a conductance-based model neuron, here we show that biologically plausible shifts in IA conductance and inactivation kinetics produce dissoci

APA, Harvard, Vancouver, ISO, and other styles

5

Perina, Welder Fernandes, Vanessa Cristina Pereira Silva, Joao Antonio Martino, Paula Ghedini Der Agopian, Eddy Simoen, and Anabela Veloso. "Intrinsic Voltage Gain of Stacked GAA Nanosheet MOSFETs Operating at High Temperatures." ECS Meeting Abstracts MA2020-01, no. 24 (2020): 1395. http://dx.doi.org/10.1149/ma2020-01241395mtgabs.

Full text

APA, Harvard, Vancouver, ISO, and other styles

6

Perina, Welder Fernandes, Vanessa Cristina Pereira Silva, Joao Antonio Martino, Paula Ghedini Der Agopian, Eddy Simoen, and Anabela Veloso. "Intrinsic Voltage Gain of Stacked GAA Nanosheet MOSFETs Operating at High Temperatures." ECS Transactions 97, no. 5 (2020): 65–69. http://dx.doi.org/10.1149/09705.0065ecst.

Full text

APA, Harvard, Vancouver, ISO, and other styles

7

Assalti, Rafael, Denis Flandre, and Michelly De Souza. "Influence of Geometrical Parameters on the DC Analog Behavior of the Asymmetric Self-Cascode FD SOI nMOSFETs." Journal of Integrated Circuits and Systems 13, no. 2 (2018): 1–7. http://dx.doi.org/10.29292/jics.v13i2.15.

Full text

Abstract:

This paper assesses the DC analog performance of a composite transistor named Asymmetric Self-Cascode structure, which is formed by two Fully Depleted SOI nMOSFETs connected in series with shortened gates. The influence of geometrical parameters, such as different channel widths and lengths on the transistors at source and drain sides is evaluated through three-dimensional numerical simulations, which have been firstly adjusted to the experimental measurements. The transconductance, output conductance, Early voltage and intrinsic voltage gain have been used as figure of merit to explore the ad

APA, Harvard, Vancouver, ISO, and other styles

8

NIRANJAN, VANDANA, ASHWANI KUMAR, and SHAIL BALA JAIN. "COMPOSITE TRANSISTOR CELL USING DYNAMIC BODY BIAS FOR HIGH GAIN AND LOW-VOLTAGE APPLICATIONS." Journal of Circuits, Systems and Computers 23, no. 08 (2014): 1450108. http://dx.doi.org/10.1142/s0218126614501084.

Full text

Abstract:

In this work, a new composite transistor cell using dynamic body bias technique is proposed. This cell is based on self cascode topology. The key attractive feature of the proposed cell is that body effect is utilized to realize asymmetric threshold voltage self cascode structure. The proposed cell has nearly four times higher output impedance than its conventional version. Dynamic body bias technique increases the intrinsic gain of the proposed cell by 11.17 dB. Analytical formulation for output impedance and intrinsic gain parameters of the proposed cell has been derived using small signal a

APA, Harvard, Vancouver, ISO, and other styles

9

Pandey, Himadri, Jorge-Daniel Aguirre-Morales, Satender Kataria, et al. "Enhanced Intrinsic Voltage Gain in Artificially Stacked Bilayer CVD Graphene Field Effect Transistors." Annalen der Physik 529, no. 11 (2017): 1700106. http://dx.doi.org/10.1002/andp.201700106.

Full text

APA, Harvard, Vancouver, ISO, and other styles

10

Rodrigues, Michele, Milene Galeti, Joao A. Martino, et al. "Larger Intrinsic Voltage Gain Achieved with UTBOX SOI Devices and Thin Silicon Film." ECS Transactions 44, no. 1 (2019): 25–31. http://dx.doi.org/10.1149/1.3694292.

Full text

APA, Harvard, Vancouver, ISO, and other styles

11

Sivieri, V. D. B., C. C. M. Bordallo, P. G. D. Agopian, et al. "Vertical Nanowire TFET Diameter Influence on Intrinsic Voltage Gain for Different Inversion Conditions." ECS Transactions 66, no. 5 (2015): 187–92. http://dx.doi.org/10.1149/06605.0187ecst.

Full text

APA, Harvard, Vancouver, ISO, and other styles

12

Galeti, Milene, Michele Rodrigues, Nadine Collaert, Eddy Simoen, Cor Claeys, and João Antonio Martino. "Analog Performance of SOI nMuGFETs with Different TiN Gate Electrode Thickness and High-k Dielectrics." Journal of Integrated Circuits and Systems 6, no. 2 (2011): 102–6. http://dx.doi.org/10.29292/jics.v6i2.345.

Full text

Abstract:

This work presents an analysis of the analog performance of SOI MuGFET devices and the impact of different TiN metal gate electrode thickness.Thinner TiN metal gate allows achieving large gain and this effect can be attributed to the increased Early voltage values observed for thinner TiN metal gate. This VEA increase suggests an increase of the transversal electrical field for thin TiN metal gate (reduced gate oxide thickness) that is confirmed with the increment of the GIDL current.This impact on the voltage gain is maintained for short channel length.The impact of different gate dielectrics

APA, Harvard, Vancouver, ISO, and other styles

13

Alves, Camila, Denis Flandre, and Michelly De Souza. "Analysis of Mismatching on the Analog Characteristics of GC SOI MOSFETs." Journal of Integrated Circuits and Systems 13, no. 3 (2018): 1–8. http://dx.doi.org/10.29292/jics.v13i3.16.

Full text

Abstract:

This paper presents an evaluation of mismatching impact on the analog characteristics of fully-depleted graded-channel (GC) SOI MOSFET. This study is carried out by means of electrical measurements and two-dimensional numerical simulations, comparing GC to uniformly doped transistors. Important basic parameters such as threshold voltage and subthreshold slope were analyzed as well as analog parameters, namely transconductance, output conductance, Early voltage and intrinsic voltage gain.

APA, Harvard, Vancouver, ISO, and other styles

14

Li, Yachen, Luis Portilla, and Chaewon Kim. "Influence of Fundamental Parameters on the Intrinsic Voltage Gain of Organic Thin Film Transistors." Electronic Materials Letters 17, no. 3 (2021): 277–85. http://dx.doi.org/10.1007/s13391-021-00283-y.

Full text

APA, Harvard, Vancouver, ISO, and other styles

15

Doria, Rodrigo T., Marcelo Antonio Pavanello, Renan D. Trevisoli, et al. "Analog Operation Temperature Dependence of nMOS Junctionless Transistors Focusing on Harmonic Distortion." Journal of Integrated Circuits and Systems 6, no. 2 (2011): 114–21. http://dx.doi.org/10.29292/jics.v6i2.347.

Full text

Abstract:

This paper performs a comparative study of the analog performance of Junctionless Nanowire Transistors (JNTs) and classical Trigate inversion mode (IM) devices focusing on the harmonic distortion. The study has been carried out in the temperature range of 223 K up to 473 K. The non-linearity or harmonic distortion (HD) has been evaluated in terms of the total and the third order distortions (THD and HD3, respectively) at a fixed input bias and at a targeted output swing. Several parameters important for the HD evaluation have also been observed such as the transconductance to the drain current

APA, Harvard, Vancouver, ISO, and other styles

16

Jerabek, Jan, Roman Sotner, Josef Polak, et al. "Resistor-Less Single-Purpose or Reconfigurable Biquads Utilizing Single z-Copy Controlled-Gain Voltage Differencing Current Conveyor." Journal of Circuits, Systems and Computers 26, no. 03 (2016): 1750050. http://dx.doi.org/10.1142/s0218126617500505.

Full text

Abstract:

Presented work deals with applications of the single [Formula: see text]-copy controlled-gain voltage differencing current conveyor (ZC-CG-VDCC) in single purpose and multifunctional biquadratic voltage- and current-mode active resistor-less filters. Electronically adjustable features of the active device (intrinsic current input resistance [Formula: see text], current gain [Formula: see text] and transconductance [Formula: see text]) are controlled by DC bias current. These mentioned adjustable features allow interesting possibilities of control of the pole frequency and quality factor. Four

APA, Harvard, Vancouver, ISO, and other styles

17

Oliveira, Alberto Vinicius de, Paula Ghedini Der Agopian, Joao Antonio Martino, et al. "Comparative analysis of the intrinsic voltage gain and unit gain frequency between SOI and bulk FinFETs up to high temperatures." Solid-State Electronics 123 (September 2016): 124–29. http://dx.doi.org/10.1016/j.sse.2016.05.004.

Full text

APA, Harvard, Vancouver, ISO, and other styles

18

Bahubalindruni, Pydi Ganga, Asal Kiazadeh, Allegra Sacchetti, et al. "Influence of Channel Length Scaling on InGaZnO TFTs Characteristics: Unity Current-Gain Cutoff Frequency, Intrinsic Voltage-Gain, and On-Resistance." Journal of Display Technology 12, no. 6 (2016): 515–18. http://dx.doi.org/10.1109/jdt.2016.2550610.

Full text

APA, Harvard, Vancouver, ISO, and other styles

19

Šotner, Roman, Norbert Herencsár, Jan Jeřábek, et al. "New Double Current Controlled CFA (DCC–CFA) Based Voltage–Mode Oscillator with Independent Electronic Control of Oscillation Condition and Frequency." Journal of Electrical Engineering 64, no. 2 (2013): 65–75. http://dx.doi.org/10.2478/jee-2013-0010.

Full text

Abstract:

In this paper, a new electronically tunable quadrature oscillator (ETQO) based on two modified versions of current feedback amplifiers (CFAs), the so called double current controlled CFA (DCC-CFAs) is presented. The frequency of oscillation (FO) of the proposed voltage-mode (VM) ETQO is electronically adjustable by current gain or by varying the intrinsic resistance of the X terminal of the active element used. The condition of oscillation (CO) is adjustable by current gain independently with respect to frequency of oscillation. Simultaneous control of current gain and intrinsic resistance all

APA, Harvard, Vancouver, ISO, and other styles

20

Pavanello, Marcelo A., João A. Martino, Eddy Simoen, Rita Rooyackers, Nadine Collaert, and Cor Claeys. "Influence of Fin Width on the Intrinsic Voltage Gain of Standard and Strained Triple-Gate nFinFETs." ECS Transactions 14, no. 1 (2019): 253–61. http://dx.doi.org/10.1149/1.2956039.

Full text

APA, Harvard, Vancouver, ISO, and other styles

21

Oliveira, A. V. d., P. G. D. Agopian, J. A. Martino, et al. "Impact of Gate Stack Dielectric on Intrinsic Voltage Gain and Low Frequency Noise in Ge pMOSFETs." ECS Transactions 66, no. 5 (2015): 309–14. http://dx.doi.org/10.1149/06605.0309ecst.

Full text

APA, Harvard, Vancouver, ISO, and other styles

22

Zhang, Jiawei, Joshua Wilson, Gregory Auton, et al. "Extremely high-gain source-gated transistors." Proceedings of the National Academy of Sciences 116, no. 11 (2019): 4843–48. http://dx.doi.org/10.1073/pnas.1820756116.

Full text

Abstract:

Despite being a fundamental electronic component for over 70 years, it is still possible to develop different transistor designs, including the addition of a diode-like Schottky source electrode to thin-film transistors. The discovery of a dependence of the source barrier height on the semiconductor thickness and derivation of an analytical theory allow us to propose a design rule to achieve extremely high voltage gain, one of the most important figures of merit for a transistor. Using an oxide semiconductor, an intrinsic gain of 29,000 was obtained, which is orders of magnitude higher than a

APA, Harvard, Vancouver, ISO, and other styles

23

Juusola, M., R. O. Uusitalo, and M. Weckström. "Transfer of graded potentials at the photoreceptor-interneuron synapse." Journal of General Physiology 105, no. 1 (1995): 117–48. http://dx.doi.org/10.1085/jgp.105.1.117.

Full text

Abstract:

To characterize the transfer of graded potentials and the properties of the associated noise in the photoreceptor-interneuron synapse of the blowfly (Calliphora vicina) compound eye, we recorded voltage responses of photoreceptors (R1-6) and large monopolar cells (LMC) evoked by: (a) steps of light presented in the dark; (b) contrast steps; and (c) pseudorandomly modulated contrast stimuli at backgrounds covering 6 log intensity units. Additionally, we made recordings from photoreceptor axon terminals. Increased light adaptation gradually changed the synaptic signal transfer from low-pass to b

APA, Harvard, Vancouver, ISO, and other styles

24

Oliveira, Alberto V., Paula Ghedini Der Agopian, João Antonio Martino, et al. "Impact of Gate Stack Layer Composition on Dynamic Threshold Voltage and Analog Parameters of Ge pMOSFETs." Journal of Integrated Circuits and Systems 11, no. 1 (2016): 7–12. http://dx.doi.org/10.29292/jics.v11i1.424.

Full text

Abstract:

One of the main challenging issues for germanium (Ge) devices is the gate stack engineering which determines the interface state density (NIT) and the associated channel/oxide interface quality. This paper shows how this issue can play a role in p-channel Ge MOSFETs considering both the operation mode, i.e., comparing conventional, dynamic threshold voltage (DT, where VBS = VGS) and enhanced dynamic threshold voltage (eDT, where VBS=k*VGS) modes, and the main analog parameters like the Early voltage (VEA) and intrinsic voltage gain (AV). Moreover, the impact of different HfO2/Al2O3 gate stack

APA, Harvard, Vancouver, ISO, and other styles

25

XING, HUILI G., and UMESH K. MISHRA. "TEMPERATURE DEPENDENT I-V CHARACTERISTICS OF AlGaN/GaN HBTS AND GaN BJTS." International Journal of High Speed Electronics and Systems 14, no. 03 (2004): 819–24. http://dx.doi.org/10.1142/s0129156404002892.

Full text

Abstract:

DC I-V characteristics of AlGaN/GaN heterojunction bipolar transistors (HBTs) and GaN homojunction bipolar transistors (BJTs) are analyzed in the temperature range of 200-450 K. At low current levels, the adverse effects of poor ohmic contacts coupled with paths of high leakage make it difficult to extract intrinsic device operation ["Explanation of anomalous current gain observed in GaN based bipolar transistors", Xing et al. IEEE Elect. Dev. Lett. 24(1) 2003:p.4-6]. At intermediate current levels, owing to enhanced ionization of Mg in the base, the HBTs show an increase in current gain resul

APA, Harvard, Vancouver, ISO, and other styles

26

Guo, Benqing, Jing Gong, Yao Wang, and Jingwei Wu. "A 0.2–3.3 GHz 2.4 dB NF 45 dB gain CMOS current-mode receiver front-end." Modern Physics Letters B 34, no. 22 (2020): 2050226. http://dx.doi.org/10.1142/s0217984920502267.

Full text

Abstract:

A CMOS fully differential current-mode front-end for SAW-less receivers is proposed. The noise-canceling LNTA has a main path of the common-gate (CG) stage and an auxiliary path of the inverter stage. A current mirror is used to combine the signals from the main and auxiliary paths in current mode. The stacked nMOS/pMOS configurations improve their power efficiency. The traditional stacked tri-state inverter as D-latch replaced by the discrete inverter and transmission gate enables a reduced supply voltage of divider core. LO generator based on the improved divider provides quarter LO signals

APA, Harvard, Vancouver, ISO, and other styles

27

Latorre, Ramon, Riccardo Olcese, Claudia Basso, et al. "Molecular Coupling between Voltage Sensor and Pore Opening in the Arabidopsis Inward Rectifier K+ Channel KAT1." Journal of General Physiology 122, no. 4 (2003): 459–69. http://dx.doi.org/10.1085/jgp.200308818.

Full text

Abstract:

Animal and plant voltage-gated ion channels share a common architecture. They are made up of four subunits and the positive charges on helical S4 segments of the protein in animal K+ channels are the main voltage-sensing elements. The KAT1 channel cloned from Arabidopsis thaliana, despite its structural similarity to animal outward rectifier K+ channels is, however, an inward rectifier. Here we detected KAT1-gating currents due to the existence of an intrinsic voltage sensor in this channel. The measured gating currents evoked in response to hyperpolarizing voltage steps consist of a very fast

APA, Harvard, Vancouver, ISO, and other styles

28

Bordallo, Caio C. M., Victor B. Sivieri, Joao Antonio Martino, et al. "Impact of the NW-TFET Diameter on the Efficiency and the Intrinsic Voltage Gain From a Conduction Regime Perspective." IEEE Transactions on Electron Devices 63, no. 7 (2016): 2930–35. http://dx.doi.org/10.1109/ted.2016.2559580.

Full text

APA, Harvard, Vancouver, ISO, and other styles

29

Perina, Welder Fernandes, João Antonio Martino, and Paula Ghedini Der Agopian. "Analysis of Omega-Gate Nanowire SOI MOSFET Under Analog Point of View." Journal of Integrated Circuits and Systems 15, no. 1 (2020): 1–6. http://dx.doi.org/10.29292/jics.v15i1.113.

Full text

Abstract:

This paper presents an evaluation of omega-gate nanowire n- and p-type SOI MOSFETs performance focusing on the main analog figures of merit. The different channel widths (WNW) and channel lengths (L) were also evaluated. These devices presented values of subthreshold slope near the theoretical limit at room temperature (60 mV/dec) and in the worst case a DIBL value smaller than 70 mV/V showing its immunity to short channel effects (SCEs) in the range studied. The narrowest device showed great electrostatic coupling, improving transconductance (gm), presenting an unit gain frequency over 200 GH

APA, Harvard, Vancouver, ISO, and other styles

30

Maralani, Ayden, M. S. Mazzola, and A. P. Pisano. "Vertical Channel Silicon Carbide JFETs Based Operational Amplifiers." Materials Science Forum 740-742 (January 2013): 1069–72. http://dx.doi.org/10.4028/www.scientific.net/msf.740-742.1069.

Full text

Abstract:

Superior performance of the Silicon Carbide (SiC) semiconductor in high temperature and harsh environment is widely known. However, utilizing the Vertical Channel 4H–SiC JFET (SiC VJFET) for analog circuit design exhibits significant design challenges, even at room temperature. The fundamental challenges are low intrinsic gain, the limitation of the Gate to Source Voltage Range (GSVR), and restrictions on utilizing Channel Length (CL) as a design parameter due to fabrication complexity. These challenges must be successfully overcome at room temperature, before moving forward with high temperat

APA, Harvard, Vancouver, ISO, and other styles

31

Hu, Caiping, DiJon D. Hill, and Kwoon Y. Wong. "Intrinsic physiological properties of the five types of mouse ganglion-cell photoreceptors." Journal of Neurophysiology 109, no. 7 (2013): 1876–89. http://dx.doi.org/10.1152/jn.00579.2012.

Full text

Abstract:

In the mammalian retina, some ganglion cells express the photopigment melanopsin and function as photoreceptors. Five morphological types of these intrinsically photosensitive retinal ganglion cells (ipRGCs), M1–M5, have been identified in mice. Whereas M1 specializes in non-image-forming visual functions and drives such behaviors as the pupillary light reflex and circadian photoentrainment, the other types appear to contribute to image-forming as well as non-image-forming vision. Recent work has begun to reveal physiological diversity among some of the ipRGC types, including differences in ph

APA, Harvard, Vancouver, ISO, and other styles

32

Yang, Zhen, and Fidel Santamaria. "Purkinje cell intrinsic excitability increases after synaptic long term depression." Journal of Neurophysiology 116, no. 3 (2016): 1208–17. http://dx.doi.org/10.1152/jn.00369.2016.

Full text

Abstract:

Coding in cerebellar Purkinje cells not only depends on synaptic plasticity but also on their intrinsic membrane excitability. We performed whole cell patch-clamp recordings of Purkinje cells in sagittal cerebellar slices in mice. We found that inducing long-term depression (LTD) in the parallel fiber to Purkinje cell synapses results in an increase in the gain of the firing rate response. This increase in excitability is accompanied by an increase in the input resistance and a decrease in the amplitude of the hyperpolarization-activated cyclic nucleotide-gated (HCN) channel-mediated voltage s

APA, Harvard, Vancouver, ISO, and other styles

33

YASIN, ZAFAR, KURT HANSEN, MAGNUS LUNDIN, ROGER RASSOL, LENNART ISAKSSON, and BENT SCHRODER. "APPLICABILITY OF PARALLEL PLATE AVALANCHE COUNTERS TO SPONTANEOUS FISSION FROM 252Cf." International Journal of Modern Physics E 21, no. 04 (2012): 1250052. http://dx.doi.org/10.1142/s0218301312500528.

Full text

Abstract:

The construction and performance of the parallel plate avalanche counters (PPACs) using a spontaneous fission source 252 Cf is described in this paper. The parallel plate circular electrodes are made of aluminum foils having a thickness less than ten microns. After fabrication, the detectors and the source are mounted inside a reaction chamber, the source between the two detectors. A low pressure is created inside the chamber using isobutane ( C 4 H 10) and a high voltage is applied to the electrodes. The detectors are first operated at different pressures and voltages to find the optimum valu

APA, Harvard, Vancouver, ISO, and other styles

34

Wang, Bin, Brad S. Rothberg, and Robert Brenner. "Mechanism of Increased BK Channel Activation from a Channel Mutation that Causes Epilepsy." Journal of General Physiology 133, no. 3 (2009): 283–94. http://dx.doi.org/10.1085/jgp.200810141.

Full text

Abstract:

Concerted depolarization and Ca2+ rise during neuronal action potentials activate large-conductance Ca2+- and voltage-dependent K+ (BK) channels, whose robust K+ currents increase the rate of action potential repolarization. Gain-of-function BK channels in mouse knockout of the inhibitory β4 subunit and in a human mutation (αD434G) have been linked to epilepsy. Here, we investigate mechanisms underlying the gain-of-function effects of the equivalent mouse mutation (αD369G), its modulation by the β4 subunit, and potential consequences of the mutation on BK currents during action potentials. Kin

APA, Harvard, Vancouver, ISO, and other styles

35

Buhler, Rudolf T., Renato Giacomini, Marcelo Antonio Pavanello, and João Antonio Martino. "Fin Cross-Section Shape Influence on Short Channel Effects of MuGFETs." Journal of Integrated Circuits and Systems 7, no. 2 (2012): 137–44. http://dx.doi.org/10.29292/jics.v7i2.366.

Full text

Abstract:

Multiple-gate FETs is normally constructed on pre-etched silicon fins. These devices often present casual width variations along the silicon height; mostly caused by technological limitations of the fin definition process, due to non-ideal anisotropic etch. The resulting devices have, consequently, non-rectangular cross-sections, which can affect their electrical behavior. This work addresses the dependence of fin width non-uniformity on the occurrence of short-channel effects through comparative analysis, based on threedimensional numeric simulation of non-rectangular cross-section devices. T

APA, Harvard, Vancouver, ISO, and other styles

36

Cirino, Thomas J., Scott W. Harden, Jay P. McLaughlin, and Charles J. Frazier. "Region-specific effects of HIV-1 Tat on intrinsic electrophysiological properties of pyramidal neurons in mouse prefrontal cortex and hippocampus." Journal of Neurophysiology 123, no. 4 (2020): 1332–41. http://dx.doi.org/10.1152/jn.00029.2020.

Full text

Abstract:

Human immunodeficiency virus (HIV)-1 transactivator of transcription protein (Tat) is a viral protein that promotes transcription of the HIV genome and possesses cell-signaling properties. Long-term exposure of central nervous system (CNS) tissue to HIV-1 Tat is theorized to contribute to HIV-associated neurodegenerative disorder (HAND). In the current study, we sought to directly evaluate the effect of HIV-1 Tat expression on the intrinsic electrophysiological properties of pyramidal neurons located in layer 2/3 of the medial prefrontal cortex and in area CA1 of the hippocampus. Toward that e

APA, Harvard, Vancouver, ISO, and other styles

37

FAHEY, PATRICK K., and DWIGHT A. BURKHARDT. "Effects of light adaptation on contrast processing in bipolar cells in the retina." Visual Neuroscience 18, no. 4 (2001): 581–97. http://dx.doi.org/10.1017/s0952523801184087.

Full text

Abstract:

Effects of light adaptation on contrast processing in the outer retina were investigated over nearly four decades of background illumination by analyzing the intracellular responses of 111 bipolar cells, 66 horizontal cells, and 22 cone photoreceptors in the superfused eyecup of the tiger salamander (Ambystoma tigrinum). Light adaptation had striking and similar effects on the average contrast responses of the hyperpolarizing (Bh) and depolarizing (Bd) classes of bipolar cells: Over the lower two decades of background illumination, the contrast gain increased 7-fold to reach values as high as

APA, Harvard, Vancouver, ISO, and other styles

38

Bryson, Alexander, Robert John Hatch, Bas-Jan Zandt, et al. "GABA-mediated tonic inhibition differentially modulates gain in functional subtypes of cortical interneurons." Proceedings of the National Academy of Sciences 117, no. 6 (2020): 3192–202. http://dx.doi.org/10.1073/pnas.1906369117.

Full text

Abstract:

The binding of GABA (γ-aminobutyric acid) to extrasynaptic GABAA receptors generates tonic inhibition that acts as a powerful modulator of cortical network activity. Despite GABA being present throughout the extracellular space of the brain, previous work has shown that GABA may differentially modulate the excitability of neuron subtypes according to variation in chloride gradient. Here, using biophysically detailed neuron models, we predict that tonic inhibition can differentially modulate the excitability of neuron subtypes according to variation in electrophysiological properties. Surprisin

APA, Harvard, Vancouver, ISO, and other styles

39

Ladenbauer, Josef, Moritz Augustin, and Klaus Obermayer. "How adaptation currents change threshold, gain, and variability of neuronal spiking." Journal of Neurophysiology 111, no. 5 (2014): 939–53. http://dx.doi.org/10.1152/jn.00586.2013.

Full text

Abstract:

Many types of neurons exhibit spike rate adaptation, mediated by intrinsic slow K+ currents, which effectively inhibit neuronal responses. How these adaptation currents change the relationship between in vivo like fluctuating synaptic input, spike rate output, and the spike train statistics, however, is not well understood. In this computational study we show that an adaptation current that primarily depends on the subthreshold membrane voltage changes the neuronal input-output relationship (I-O curve) subtractively, thereby increasing the response threshold, and decreases its slope (response

APA, Harvard, Vancouver, ISO, and other styles

40

Sharan, Tripurari, and Vijaya Bhadauria. "Fully Differential, Bulk-Driven, Class AB, Sub-Threshold OTA With Enhanced Slew Rates and Gain." Journal of Circuits, Systems and Computers 26, no. 01 (2016): 1750001. http://dx.doi.org/10.1142/s0218126617500013.

Full text

Abstract:

This paper presents a single-stage ultra-low-power fully differential operational transconductance amplifier (FD-OTA) with rail-to-rail linear input range operating in weak inversion region. The input core of the OTA is comprised of source degenerated, flipped voltage follower (FVF)-based bulk-driven class AB input pair, into which a regenerative feedback loop has been inserted to boost its bulk transconductance ([Formula: see text]). The proposed FD-OTA has utilized self-cascode current mirror (SC-CM) loads, which increase its open loop gain from nominal intrinsic value of 42[Formula: see tex

APA, Harvard, Vancouver, ISO, and other styles

41

Brown, David H., and Richard L. Hyson. "Intrinsic physiological properties underlie auditory response diversity in the avian cochlear nucleus." Journal of Neurophysiology 121, no. 3 (2019): 908–27. http://dx.doi.org/10.1152/jn.00459.2018.

Full text

Abstract:

Sensory systems exploit parallel processing of stimulus features to enable rapid, simultaneous extraction of information. Mechanisms that facilitate this differential extraction of stimulus features can be intrinsic or synaptic in origin. A subdivision of the avian cochlear nucleus, nucleus angularis (NA), extracts sound intensity information from the auditory nerve and contains neurons that exhibit diverse responses to sound and current injection. NA neurons project to multiple regions ascending the auditory brain stem including the superior olivary nucleus, lateral lemniscus, and avian infer

APA, Harvard, Vancouver, ISO, and other styles

42

Barbastegan, Saber, and Ali Shahhoseini. "Performance analysis of junctionless carbon nanotube field effect transistors using NEGF formalism." Modern Physics Letters B 30, no. 10 (2016): 1650125. http://dx.doi.org/10.1142/s0217984916501256.

Full text

Abstract:

This paper presents the simulation study of a junctionless carbon nanotube field effect transistor (JL-CNTFET) and a comparison is made with the conventional CNTFET using the atomistic scale simulation, within the non-equilibrium Green’s function (NEGF) formalism. In order to have a comprehensive analysis, both analog and digital parameters of the device are studied. Results have shown that JL-CNTFET with respect to C-CNTFET shows slightly higher [Formula: see text] ratio about two times larger than that of C-CNTFET, smaller electric field along channel more than three order of magnitude and r

APA, Harvard, Vancouver, ISO, and other styles

43

Ignatova, Irina I., Paulus Saari, and Roman V. Frolov. "Latency of phototransduction limits transfer of higher-frequency signals in cockroach photoreceptors." Journal of Neurophysiology 123, no. 1 (2020): 120–33. http://dx.doi.org/10.1152/jn.00365.2019.

Full text

Abstract:

Visual transduction in rhabdomeric photoreceptors is compartmentalized and discretized. Signals of individual microvilli, the quantum bumps, are electrotonically summed, producing a graded response. Intrinsic dispersion of quantum bump latencies is thought to introduce noise and degrade signal transfer. Here, we found profound differences in the information rate and signaling bandwidth between in vitro patch-clamp and in vivo intracellular recordings of Periplaneta americana photoreceptors and traced them to the properties of quantum bumps and membrane resistance. Comparison of macroscopic and

APA, Harvard, Vancouver, ISO, and other styles

44

Likhite, Rugved, Aishwaryadev Banerjee, Apratim Majumder, Mohit Karkhanis, Hanseup Kim, and Carlos H. Mastrangelo. "Parametrically Amplified Low-Power MEMS Capacitive Humidity Sensor." Sensors 19, no. 18 (2019): 3954. http://dx.doi.org/10.3390/s19183954.

Full text

Abstract:

We present the design, fabrication, and response of a polymer-based Laterally Amplified Chemo-Mechanical (LACM) humidity sensor based on mechanical leveraging and parametric amplification. The device consists of a sense cantilever asymmetrically patterned with a polymer and flanked by two stationary electrodes on the sides. When exposed to a humidity change, the polymer swells after absorbing the analyte and causes the central cantilever to bend laterally towards one side, causing a change in the measured capacitance. The device features an intrinsic gain due to parametric amplification result

APA, Harvard, Vancouver, ISO, and other styles

45

Schmidt, Alexander, Holger Kappert, and Rainer Kokozinski. "Enhanced High Temperature Performance of PD-SOI MOSFETs in Analog Circuits Using Reverse Body Biasing." Additional Conferences (Device Packaging, HiTEC, HiTEN, and CICMT) 2013, HITEN (2013): 000122–33. http://dx.doi.org/10.4071/hiten-ta14.

Full text

Abstract:

Analog circuit realized in a PD-SOI (Partially-Depleted Silicon-on-Insulator) CMOS process for a wide temperature range up to 400 °C are significantly affected by the MOSFET device characteristics at high temperatures. As leakage currents increase with temperature, the analog device performance, e.g. intrinsic gain and bandwidth tend to decrease. Both effects influence the precision of analog circuits and lead to malfunction of the circuitry at high temperatures. Enhancement of the MOSFET device performance and improved design techniques are required to handle these issues. In this paper, we d

APA, Harvard, Vancouver, ISO, and other styles

46

Schmidt, Alexander, Holger Kappert, and Rainer Kokozinski. "Enhanced High Temperature Performance of PD-SOI MOSFETs in Analog Circuits Using Reverse Body Biasing." Journal of Microelectronics and Electronic Packaging 10, no. 4 (2013): 171–82. http://dx.doi.org/10.4071/imaps.389.

Full text

Abstract:

Analog circuits realized in a PD-SOI (partially-depleted silicon-on-insulator) CMOS technology for a wide temperature range up to 400°C are significantly affected by the transistor characteristics at high temperatures. As leakage currents increase with temperature, the analog device performance, for example, intrinsic gain and bandwidth, tend to decrease. Both effects influence the precision of analog circuits and lead to malfunction of the circuitry at high temperatures. Enhancement of the MOSFET device performance and improved design techniques are required to handle these issues. In this pa

APA, Harvard, Vancouver, ISO, and other styles

47

Stahl, John S. "Eye Movements of the Murine P/Q Calcium Channel MutantRocker, and the Impact of Aging." Journal of Neurophysiology 91, no. 5 (2004): 2066–78. http://dx.doi.org/10.1152/jn.01068.2003.

Full text

Abstract:

Mutations in the gene encoding the ion pore of the P/Q voltage-activated calcium channel (CACNA1A) are predicted to alter synaptic transmission and dendritic excitability within cerebellar granule and Purkinje cells. Determining the relationships between these alterations, neuronal activity, and behavior may yield insight into the relationship between neuronal intrinsic properties and signal processing within the ocular motor system. Toward this end, we compared ocular motor performance in the CACNA1A mutant rocker and C57BL/6 controls. Average vertical eye position was abnormally elevated in

APA, Harvard, Vancouver, ISO, and other styles

48

Pilarski, Jason Q., Hilary E. Wakefield, Andrew J. Fuglevand, Richard B. Levine, and Ralph F. Fregosi. "Developmental Nicotine Exposure Alters Neurotransmission and Excitability in Hypoglossal Motoneurons." Journal of Neurophysiology 105, no. 1 (2011): 423–33. http://dx.doi.org/10.1152/jn.00876.2010.

Full text

Abstract:

Hypoglossal motoneurons (XII MNs) control muscles of the mammalian tongue and are rhythmically active during breathing. Acetylcholine (ACh) modulates XII MN activity by promoting the release of glutamate from neurons that express nicotinic ACh receptors (nAChRs). Chronic nicotine exposure alters nAChRs on neurons throughout the brain, including brain stem respiratory neurons. Here we test the hypothesis that developmental nicotine exposure (DNE) reduces excitatory synaptic input to XII MNs. Voltage-clamp experiments in rhythmically active medullary slices showed that the frequency of excitator

APA, Harvard, Vancouver, ISO, and other styles

49

Itocazu, V. T., V. Sonnenberg, J. A. Martino, E. Simoen, and Cor Clayes. "Ground Plane Influence on Analog Parameters of Different UTBB nMOSFET Technologies." Journal of Integrated Circuits and Systems 12, no. 2 (2017): 82–88. http://dx.doi.org/10.29292/jics.v12i2.455.

Full text

Abstract:

This paper presents an analysis of the silicon film thickness (6 nm and 14 nm), the gate dielectric material (SiO2 and High- κ material) and the Ground Plane influence on the analog parameters of Ultra Thin Body and Buried Oxide (UTBB) SOl nMOSFET devices, based on experimental and simulation results. Two channel lengths (70 nm and 1μm) have been considered and the analog performance has been analyzed as a function of the back gate bias. It is shown that at zero back gate bias , the presence of a Ground Plane improves the transconductance in the saturation region due to the strong coupling bet

APA, Harvard, Vancouver, ISO, and other styles

50

Beqal, Asmae El, Bachir Benhala, and Izeddine Zorkani. "A Genetic algorithm for the optimal design of a multistage amplifier." International Journal of Electrical and Computer Engineering (IJECE) 10, no. 1 (2020): 129. http://dx.doi.org/10.11591/ijece.v10i1.pp129-138.

Full text

Abstract:

<span lang="EN-US">The optimal sizing of analog circuits is one of the most complicated processes, because of the number of variables taken into, to the number of required objectives to be optimized and to the constraint functions restrictions. The aim is to automate this activity in order to accelerate the circuits design and sizing. In this paper, we deal with the optimization of the three stage bipolar transistor amplifier performances namely the voltage gain (A<sub>V</sub>), the input impedance (Z<sub>IN</sub>), the output impedance (Z<sub>OUT</sub&gt

APA, Harvard, Vancouver, ISO, and other styles

We offer discounts on all premium plans for authors whose works are included in thematic literature selections. Contact us to get a unique promo code!